CN112802815A - GaN microwave power device special for 5G communication and packaging process thereof - Google Patents
GaN microwave power device special for 5G communication and packaging process thereof Download PDFInfo
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- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
- H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
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Abstract
The invention discloses a GaN microwave power device special for 5G communication and a packaging process thereof, and the GaN microwave power device comprises a shell, a metal heat sink, a GaN microwave power chip, a capacitor, an electrode support and a pipe cap, wherein the GaN microwave power chip comprises a SiC substrate, a GaN HEMT epitaxial structure grows on the SiC substrate, the GaN HEMT epitaxial structure comprises an aluminum nitride layer, a non-doped GaN layer and an aluminum gallium nitrogen layer multilayer structure, a grid electrode is formed on the GaN HEMT epitaxial structure through evaporation and stripping, a source electrode and a drain electrode are arranged on two sides of the grid electrode, the source electrode and the drain electrode form ohmic contact with the GaN epitaxial structure, and a SiN film is deposited on the GaN HEMT epitaxial structure outside the source electrode. The invention has the advantages of large forbidden band width, high voltage resistance, high electronic saturation velocity and the like, comprehensively improves the performance of the 5G base station, and has great prospect in the aspect of microwave communication.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing and packaging, in particular to a GaN microwave power device special for 5G communication and a packaging process thereof.
Background
China establishes planning for realizing a 5G mobile communication base station in 2020, so that research on a GaN radio-frequency power device applied to a new-generation mobile communication system is necessary to preempt the market and the high point of technical indexes, keep pace with the research and development of international mainstream products, accelerate the research and development of China in the field of GaN radio-frequency power devices, realize a GaN HEMT device and a radio-frequency power amplifier device which have independent intellectual property rights and are based on a SiC substrate, and are applied to 4G and 5G base stations.
Because the GaN material has higher breakdown electric field and higher working voltage than GaAs and Si, the power density of the GaN device is ten times higher than that of the GaAs device, and the size of the GaN device is smaller because the power density of the GaN device is higher. GaN materials possess higher electron saturation drift velocities than GaAs and Si and therefore can provide greater bandwidth, higher amplifier gain and higher power efficiency. The GaN material has a larger forbidden bandwidth than GaAs and Si, so that the device can bear higher working voltage and higher working temperature, and the theoretical working temperature can reach above 700 ℃, so that the device can work in a harsher environment. The GaN power device with SiC as the substrate has higher heat conductivity, the heat dissipation performance of the whole device is superior to that of power devices made of other materials, and the working stability of the device is ensured.
The GaN-based radio frequency device has the excellent characteristics of high working voltage, high power density, high working frequency, high bandwidth and the like, and is an ideal radio frequency power device in the range from the L waveband to the W waveband. Compared with the traditional Si-based LDMOS and GaAs device and the like, the silicon-based LDMOS and GaAs device has remarkable advantages and has wide application prospect in the fields of next-generation wireless communication base stations and satellite communication. The GaN HEMT device and the radio frequency power amplifier module based on the SiC substrate with the independent intellectual property rights are realized, and application verification is completed aiming at 4G and 5G systems. The high-quality device packaging technology is a precondition for realizing a high-performance GaN-based radio frequency device.
At present, the market of GaN-based microwave power devices is just beginning, and the GaN-based microwave power devices are mainly used in the field of military industry at present. The method has the defects in mass production. There are technical problems in power added efficiency and reliability. Mainly embodied in the technical barriers of current collapse effect and polarization.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a GaN-based microwave power device special for 5G communication and a packaging process thereof, and the GaN-based microwave power device has the characteristics of large forbidden band width, high voltage resistance, high electronic saturation speed and the like, has comprehensive improvement on the performance of a 5G base station, and has a great prospect in the aspect of microwave communication.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
the utility model provides a special gaN microwave power device of 5G communication, which comprises a housin, the metal is heat sink, gaN microwave power chip, electric capacity, electrode support and pipe cap, gaN microwave power chip includes the SiC substrate, grow gaN HEMT epitaxial structure on the SiC substrate, gaN HEMT epitaxial structure includes aluminium nitride layer, undoped gaN layer, aluminium gallium nitrogen layer multilayer structure from bottom to top in proper order, form the grid through evaporating and peeling off on the gaN HEMT epitaxial structure, the grid both sides are provided with source electrode and drain electrode, source electrode and drain electrode and gaN HEMT epitaxial structure form ohmic contact, deposit the SiN film on the gaN HEMT epitaxial structure outside the source electrode, the drain electrode, the grid.
The technical scheme of the invention is further improved as follows: the capacitor is attached to the metal heat sink through the conductive adhesive containing the nano-silver, the GaN microwave power chip is attached to the metal heat sink through the conductive adhesive containing the nano-silver, and the thickness of the conductive adhesive is 40 micrometers.
The technical scheme of the invention is further improved as follows: the nano silver is used as a conductive layer for connecting the chip and the metal heat sink, and the conductive layer forms a source electrode grounding layer and a heat dissipation layer.
The technical scheme of the invention is further improved as follows: a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a capacitor C5, a GaN microwave power chip X1 and a GaN microwave power chip X2 are welded on the metal heat sink, bonding wires are respectively led out from pins at two sides of the GaN microwave power chip X1 and connected with the capacitor C1 and the capacitor C2, and the bonding wires are led out from a pin at the right side of the GaN microwave power chip X1 and connected with a drain electrode; a bonding wire is led out from a pin on the left side of the capacitor C1 and connected with the grid electrode, bonding wires are respectively led out from two sides of the GaN microwave power chip X2 and connected with the capacitor C4 and the capacitor C5, a bonding wire is led out from the right side of the GaN microwave power chip X2 and connected with the drain electrode, a bonding wire is led out from the left side of the capacitor C4 and connected with the right side of the capacitor C3, and a bonding wire is led out from the left.
The technical scheme of the invention is further improved as follows: the capacitor C1, the capacitor C2, the capacitor C3, the capacitor C4 and the capacitor C5 are all silicon-based MOS capacitors.
The technical scheme of the invention is further improved as follows: the bonding wire adopts copper wire, and the diameter is 35 microns.
The technical scheme of the invention is further improved as follows: the pipe cap is made of any one of ceramic, plastic and LCP.
A packaging process of a GaN microwave power device special for 5G communication comprises the following steps:
step (1), pasting a piece: fixing the capacitor and the GaN microwave power chip on the metal heat sink of the tube shell through conductive adhesive;
step (2) routing: connecting the capacitor, the GaN microwave power chip and each electrode;
step (3), capping: and gluing and capping by using an automatic capping machine, and then curing.
The packaging process of the invention has the technical scheme that the packaging process is further improved as follows: the specific process of the step (1) comprises the following steps:
1) after dispensing by using a dispenser, attaching the capacitor to the metal heat sink through a conductive adhesive containing nano silver, wherein the thickness of the conductive adhesive is 40 microns;
2) after dispensing by using a dispenser, attaching the chip to a metal heat sink through a conductive adhesive containing nano silver, wherein the thickness of the conductive adhesive is 40 microns;
3) then, curing is carried out in an oven, wherein the curing temperature is 250 ℃ and the curing time is 30 minutes.
Due to the adoption of the technical scheme, the invention has the technical progress that:
the invention provides a GaN microwave power device special for 5G communication, which solves the problem that the transmitting part of a 5G base station adopts a GaN microwave power chip with SiC as a substrate to be connected with a capacitor, and a tube cap adopts ceramic or plastic materials to finish the packaging of the device, thereby meeting the requirement of power amplification in the 5G base station below 6 GHz. The microwave oven has different frequency and power microwave performances, and the overall dimension is designed according to the requirements of the working frequency and power.
The third generation semiconductor device represented by the GaN microwave power device has the advantages of large forbidden band width, high voltage resistance, high electronic saturation speed and the like, comprehensively improves the performance of the 5G base station, and has great prospect in the aspect of microwave communication.
Drawings
FIG. 1 is a schematic diagram of a circuit package of the device structure of the present invention;
FIG. 2 is a diagram of a GaN microwave power chip of the present invention;
1. SiC substrate, 2, GaN HEMT epitaxial structure, 3, SiN film.
Detailed Description
GaN is gallium nitride, which belongs to the third generation semiconductor material, hexagonal wurtzite structure; GaN has the characteristics of large forbidden band width, high heat conductivity, high temperature resistance, radiation resistance, acid and alkali resistance, high strength, high hardness and the like, and is one of the semiconductor materials for manufacturing high-power devices at present; the GaN material has larger forbidden bandwidth and higher breakdown electric field, so that the GaN device can bear larger voltage, and meanwhile, the GaN material has higher electronic saturation velocity, and is particularly suitable for power devices working at high frequency and large current.
A GaN microwave power device special for 5G communication comprises a shell, a metal heat sink, a GaN microwave power chip, a capacitor, an electrode support and a pipe cap. The GaN microwave power chip comprises a SiC substrate 1 made of SiC materials, a GaN HEMT epitaxial structure 2 grows on the SiC substrate 1, the GaN HEMT epitaxial structure 2 sequentially comprises an aluminum nitride layer, a non-doped GaN layer and an aluminum gallium nitrogen layer multilayer structure from bottom to top, a grid is formed on the GaN HEMT epitaxial structure 2 through evaporation and stripping, source electrodes and drain electrodes are arranged on two sides of the grid, the source electrodes and the drain electrodes form ohmic contact with the GaN HEMT epitaxial structure 2, and SiN films 3 are deposited on the GaN HEMT epitaxial structure 2 outside the source electrodes and the drain electrode grid.
The capacitor is attached to the metal heat sink through the conductive adhesive containing the nano-silver, the GaN microwave power chip is attached to the metal heat sink through the conductive adhesive containing the nano-silver, the thickness of the conductive adhesive is 40 micrometers, and the capacitor is a silicon-based MOS capacitor.
The nano silver is used as a conductive layer for connecting the chip and the metal heat sink, and the conductive layer forms a source electrode grounding layer and a heat dissipation layer.
Specifically, a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a capacitor C5, a GaN microwave power chip X1 and a GaN microwave power chip X2 are welded on the metal heat sink, bonding wires are respectively led out from pins at two sides of the GaN microwave power chip X1 and connected with the capacitor C1 and the capacitor C2, and the bonding wires are led out from a pin at the right side of the GaN microwave power chip X1 and connected with a drain electrode; a bonding wire is led out from a pin on the left side of the capacitor C1 and connected with the grid electrode, bonding wires are respectively led out from two sides of the GaN microwave power chip X2 and connected with the capacitor C4 and the capacitor C5, a bonding wire is led out from the right side of the GaN microwave power chip X2 and connected with the drain electrode, a bonding wire is led out from the left side of the capacitor C4 and connected with the right side of the capacitor C3, and a bonding wire is led out from the left. Wherein the bonding wire is a copper wire with a diameter of 35 microns.
The invention also comprises a packaging process of the GaN microwave power device special for 5G communication, which comprises the following steps:
step (1), pasting a piece: and fixing the capacitor and the GaN microwave power chip on the metal heat sink of the tube shell through conductive adhesive.
The specific process comprises the following steps:
1) after dispensing by using a dispenser, attaching the capacitor to the metal heat sink through a conductive adhesive containing nano silver, wherein the thickness of the conductive adhesive is 40 microns;
2) after dispensing by using a dispenser, attaching the chip to a metal heat sink through a conductive adhesive containing nano silver, wherein the thickness of the conductive adhesive is 40 microns;
3) then, curing is carried out in an oven, wherein the curing temperature is 250 ℃ and the curing time is 30 minutes.
Step (2) routing: connecting the capacitor, the GaN microwave power chip and the electrode;
step (3), capping: and gluing and capping by using an automatic capping machine, and then curing.
The invention completes the manufacture of the chip by a semiconductor process to form a three-pin-port active device with a grid electrode, a drain electrode and a source electrode, has excellent characteristics of high working voltage, high power density, high working frequency, high bandwidth and the like, and is an ideal radio frequency power device in the range from an L wave band to a W wave band; compared with the traditional silicon-based device, GaAs device and the like, the silicon-based GaAs device has remarkable advantages and has wide application prospect in the fields of 5G wireless communication base stations and satellite communication.
Claims (9)
1. The utility model provides a special gaN microwave power device of 5G communication, includes casing, metal heat sink, gaN microwave power chip, electric capacity, electrode support and pipe cap, its characterized in that: the GaN microwave power chip comprises a SiC substrate (1), a GaN HEMT epitaxial structure (2) grows on the SiC substrate (1), the GaN HEMT epitaxial structure (2) sequentially comprises an aluminum nitride layer, a non-doped GaN layer and an aluminum gallium nitrogen layer multilayer structure from bottom to top, a grid is formed on the GaN HEMT epitaxial structure (2) through evaporation and stripping, a source electrode and a drain electrode are arranged on two sides of the grid, the source electrode and the drain electrode form ohmic contact with the GaN HEMT epitaxial structure (2), and a SiN film (3) is deposited on the GaN HEMT epitaxial structure (2) outside the source electrode, the drain electrode and the grid.
2. The GaN microwave power device special for 5G communication according to claim 1, wherein: the capacitor is attached to the metal heat sink through the conductive adhesive containing the nano-silver, the GaN microwave power chip is attached to the metal heat sink through the conductive adhesive containing the nano-silver, and the thickness of the conductive adhesive is 40 micrometers.
3. The GaN microwave power device special for 5G communication according to claim 1, wherein: the nano silver is used as a conductive layer for connecting the chip and the metal heat sink, and the conductive layer forms a source electrode grounding layer and a heat dissipation layer.
4. The GaN microwave power device special for 5G communication according to claim 1, wherein: a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a capacitor C5, a GaN microwave power chip X1 and a GaN microwave power chip X2 are welded on the metal heat sink, bonding wires are respectively led out from pins at two sides of the GaN microwave power chip X1 and connected with the capacitor C1 and the capacitor C2, and the bonding wires are led out from a pin at the right side of the GaN microwave power chip X1 and connected with a drain electrode; a bonding wire is led out from a pin on the left side of the capacitor C1 and connected with the grid electrode, bonding wires are respectively led out from two sides of the GaN microwave power chip X2 and connected with the capacitor C4 and the capacitor C5, a bonding wire is led out from the right side of the GaN microwave power chip X2 and connected with the drain electrode, a bonding wire is led out from the left side of the capacitor C4 and connected with the right side of the capacitor C3, and a bonding wire is led out from the left.
5. The GaN microwave power device special for 5G communication according to claim 1, wherein: the capacitor C1, the capacitor C2, the capacitor C3, the capacitor C4 and the capacitor C5 are all silicon-based MOS capacitors.
6. The GaN microwave power device special for 5G communication according to claim 1, wherein: the bonding wire adopts copper wire, and the diameter is 35 microns.
7. The GaN microwave power device special for 5G communication according to claim 1, wherein: the pipe cap is made of any one of ceramic, plastic and LCP.
8. A packaging process of a GaN microwave power device special for 5G communication is characterized by comprising the following steps:
step (1), pasting a piece: fixing the capacitor and the GaN microwave power chip on the metal heat sink of the tube shell through conductive adhesive;
step (2) routing: connecting the capacitor, the GaN microwave power chip and the electrode;
step (3), capping: and gluing and capping by using an automatic capping machine, and then curing.
9. The packaging process of the special GaN microwave power device for 5G communication according to claim 8, characterized in that: the specific process of the step (1) comprises the following steps:
1) after dispensing by using a dispenser, attaching the capacitor to the metal heat sink through a conductive adhesive containing nano silver, wherein the thickness of the conductive adhesive is 40 microns;
2) after dispensing by using a dispenser, attaching the chip to a metal heat sink through a conductive adhesive containing nano silver, wherein the thickness of the conductive adhesive is 40 microns;
3) then, curing is carried out in an oven, wherein the curing temperature is 250 ℃ and the curing time is 30 minutes.
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| US20090065787A1 (en) * | 2006-04-10 | 2009-03-12 | Fujitsu Limited | Compound semiconductor structure |
| CN101740556A (en) * | 2009-12-23 | 2010-06-16 | 四川龙瑞微电子有限公司 | Hybrid microwave integrated circuit |
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| CN104900539A (en) * | 2015-06-10 | 2015-09-09 | 中国电子科技集团公司第十三研究所 | Method for manufacturing internal matching device with wide frequency band, small dimension and low cost |
| CN108364923A (en) * | 2018-01-11 | 2018-08-03 | 北京华碳科技有限责任公司 | Using the gallium nitride base power device and preparation method thereof of carbon nanotube microchannel heat sink |
| CN111430335A (en) * | 2020-03-22 | 2020-07-17 | 华南理工大学 | Laminated structure cascade GaN-based power device and packaging method thereof |
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2020
- 2020-12-29 CN CN202011585802.5A patent/CN112802815B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090065787A1 (en) * | 2006-04-10 | 2009-03-12 | Fujitsu Limited | Compound semiconductor structure |
| CN101162695A (en) * | 2006-10-09 | 2008-04-16 | 西安能讯微电子有限公司 | Process for gallium nitride HEMT device surface passivation and improving device electric breakdown strength |
| CN101740556A (en) * | 2009-12-23 | 2010-06-16 | 四川龙瑞微电子有限公司 | Hybrid microwave integrated circuit |
| CN103346096A (en) * | 2013-07-11 | 2013-10-09 | 苏州远创达科技有限公司 | Packaging technology for RF device |
| CN104900539A (en) * | 2015-06-10 | 2015-09-09 | 中国电子科技集团公司第十三研究所 | Method for manufacturing internal matching device with wide frequency band, small dimension and low cost |
| CN108364923A (en) * | 2018-01-11 | 2018-08-03 | 北京华碳科技有限责任公司 | Using the gallium nitride base power device and preparation method thereof of carbon nanotube microchannel heat sink |
| CN111430335A (en) * | 2020-03-22 | 2020-07-17 | 华南理工大学 | Laminated structure cascade GaN-based power device and packaging method thereof |
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