CN112750726B

CN112750726B - Semiconductor process system and method for processing semiconductor wafer

Info

Publication number: CN112750726B
Application number: CN202011194714.2A
Authority: CN
Inventors: 魏愷进; 陈哲夫
Original assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
Current assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
Priority date: 2019-10-30
Filing date: 2020-10-30
Publication date: 2024-12-31
Anticipated expiration: 2040-10-30
Also published as: CN112750726A

Abstract

A semiconductor processing system and method of processing a semiconductor wafer in a process chamber. The process chamber includes a semiconductor processing apparatus for performing a semiconductor process within the chamber. The process chamber includes a heat pipe integrated with one or more components of the process chamber. The heat pipe effectively transfers heat from within the chamber to the outside of the chamber.

Description

Semiconductor processing system and method for processing semiconductor wafer

Technical Field

The present disclosure relates to semiconductor processing systems and methods of processing semiconductor wafers.

Background

Semiconductor wafers are processed in semiconductor processing equipment. Semiconductor wafers undergo a number of processes including thin film deposition, photoresist patterning, etching processes, dopant implantation processes, annealing processes, and other types of processes. Many of these processes are performed in semiconductor processing chambers. In order to achieve uniform results in various semiconductor processes, it is beneficial to maintain the temperature in the semiconductor process chamber within a selected range.

However, the temperature within the semiconductor processing chamber may be difficult to control. Semiconductor processing often utilizes heaters to raise the temperature within the semiconductor processing chamber. However, it may be difficult to dissipate sufficient heat from the semiconductor process chamber to ensure that the temperature of the semiconductor process chamber does not rise above a selected level or outside a selected range. If the temperature is not well controlled within the semiconductor processing environment, it is possible that the semiconductor wafer will have poor uniformity, performance characteristics that are not as expected, or may need to be completely scrapped.

Disclosure of Invention

One aspect of an embodiment of the present disclosure provides a semiconductor processing system including a heater, a wall defining an interior volume, a wafer support positioned in the interior volume and configured to hold one or more semiconductor wafers, and a deposition shield positioned in the interior volume. The deposition shield includes a first surface, a second surface, and a heat pipe vapor chamber positioned between the first surface and the second surface.

Another aspect of embodiments of the present disclosure is a semiconductor processing system including a semiconductor processing chamber, a wafer support, a heater, and a heat pipe. The semiconductor processing chamber defines an interior volume. The wafer support is positioned within the semiconductor process chamber and is configured to hold a semiconductor wafer during semiconductor processing. The heater is positioned to heat the interior volume. The heat pipe is positioned to receive heat from the interior volume.

Yet another aspect of embodiments of the present disclosure is a method of processing a semiconductor wafer including supporting a semiconductor wafer in a semiconductor process chamber, outputting heat into the semiconductor process chamber through a heater, performing a semiconductor process on the semiconductor wafer positioned within the semiconductor process chamber, and transferring heat from within the semiconductor process chamber through a heat pipe.

Drawings

The aspects of the present disclosure are best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that the various features are not drawn to scale in accordance with standard practices in the industry. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 is a block diagram of a semiconductor processing system according to some embodiments;

FIG. 2A is a side cross-sectional view of a semiconductor processing system including a deposition shield formed as a heat pipe, according to some embodiments;

FIG. 2B is a top view of the deposition shield of FIG. 2A according to one embodiment;

FIG. 2C is a side view of the deposition shield of FIG. 2A according to one embodiment;

FIG. 2D is a schematic diagram of a heater liner according to an embodiment;

FIGS. 3A and 3B are schematic diagrams of vapor chamber heat pipes according to some embodiments;

FIGS. 4A and 4B are schematic diagrams of heat pipes according to some embodiments;

fig. 5 is a flow chart of a method for processing a semiconductor wafer according to some embodiments.

[ Symbolic description ]

100 Semiconductor processing system

102 Semiconductor processing chamber

103 Internal volume

104 Processing equipment

106 Wafer

108 Heater

109A electric wire

109B electric wire

110 Temperature sensor

111A heater liner

111B heater liner

112 Heat pipe

114 Control system

116 Wall

120 Deposition shield

121 Slot

124 Cover

126 Wafer support

127 Bottom electrode

128 Top electrode

130 Gas source

134 Vent hole

140 First surface

142 Second surface

143 Exhaust grill

144 Inner surface

145 Step surface

146 Outer surface

147 Top surface

149 Opening

151 Heating element

152 Capillary material

154 Column

156 Steam channel

160 Heat

162 Heat

166 Arrow head

168 Arrow head

170 Hot surface

171 First end

172 Cooling surface

173 Second end

500 Method of

502 Step

504 Step

506 Step(s)

508 Step

D1 diameter

D2 diameter

W1 width

W2 width

W3 width

W4 width

H1 height of

Height of H2

H3 height of

T1 thickness

Thickness T2

T3 thickness

Length L

Detailed Description

The following disclosure provides many different implementations or examples for implementing different features of the provided subject matter. Specific embodiments of components and arrangements are described below to simplify the present disclosure. Of course, such are merely examples and are not intended to be limiting. For example, forming a first feature over or on a second feature in the description that follows may include implementations in which the first and second features are formed in direct contact, and may also include implementations in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. Additionally, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

In addition, spatially relative terms such as "under," "above," "upper," and the like may be used herein for ease of description to describe one element or feature's relationship to another (additional) element or feature as depicted in the figures. Such spatially relative terms are intended to encompass different orientations of the element in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

Fig. 1 is a block diagram of a semiconductor processing system 100 according to one embodiment. The semiconductor processing system 100 includes a semiconductor processing chamber 102 and a control system 114. The semiconductor processing chamber 102 has an interior volume 103. The processing apparatus 104 is positioned at least partially within the semiconductor processing chamber 102. A wafer 106 and a temperature sensor 110 are positioned within the interior volume 103. The heater 108 is positioned outside the semiconductor processing chamber 102. The processing device 104 includes a heat pipe 112. The semiconductor processing chamber 102 includes a wall 116 that at least partially defines the interior volume 103.

In one embodiment, the semiconductor processing chamber 102 is configured to perform one or more semiconductor processes on the wafer 106. Wafer 106 is a semiconductor wafer. Generally, semiconductor wafers undergo numerous processes during fabrication. Such processes may include thin film deposition, photoresist patterning, etching processes, dopant implantation processes, annealing processes, and other types of processes. After all processing steps are completed, the wafer 106 is diced into individual integrated circuits.

In one embodiment, the semiconductor process chamber 102 is a thin film deposition chamber. The thin film deposition chamber may include a chemical vapor deposition chamber, a sputtering chamber, a physical vapor deposition chamber, an atomic layer deposition chamber, a plasma enhanced vapor deposition chamber, an epitaxial growth chamber, or other types of thin film deposition chambers. One skilled in the art will recognize that, in accordance with some embodiments of the present disclosure, semiconductor process chamber 102 may comprise a different thin film deposition chamber than described above without departing from the scope of the present disclosure.

In one embodiment, the semiconductor process chamber 102 is an etch chamber. The etch chamber is configured to etch a thin film deposited on the wafer 106. The etching chamber may include a chamber for wet etching, dry etching, plasma etching, or other types of etching processes. Other than the etching chambers described above may be utilized without departing from the scope of the present disclosure.

In one embodiment, the semiconductor process chamber 102 is a dopant implantation chamber. The dopant implantation chamber may comprise an ion implantation chamber that bombards the wafer 106 with dopant ions. Dopant ions are implanted into the wafer 106 according to selected parameters for the ion implantation process. The dopant implantation chamber may include dopant implants of a type other than those described above without departing from the scope of the disclosure.

The semiconductor processing chamber 102 includes a processing apparatus 104. The processing equipment 104 assists in performing semiconductor processes. The processing equipment 104 may include equipment to assist in thin film deposition processes, etching processes, ion implantation processes, annealing processes, photolithography processes, and other types of processes. Portions of the processing equipment 104 may be positioned entirely within the semiconductor processing chamber 102. Portions of the processing equipment 104 may be positioned partially within the semiconductor process chamber 102 and partially outside the semiconductor process chamber 102. Portions of the processing equipment 104 may be positioned entirely outside the semiconductor processing chamber 102.

The processing device 104 may include electrical components for generating an electric field, voltage, magnetic field, electronic signal, or other type of electrical effect. Thus, the processing device 104 may include electrodes, wires, radio frequency power sources, transmitters, receivers, or other types of electrical devices that may be utilized in semiconductor processing.

The processing equipment 104 may include equipment for managing gases or fluids within the semiconductor processing chamber 102. The processing apparatus may include means for introducing a gas or fluid into the semiconductor process chamber 102, for removing a gas or fluid from the semiconductor process chamber, for monitoring and controlling the flow, presence, or composition of a gas within the semiconductor process chamber 102.

The processing apparatus 104 may include a protection apparatus for shielding a portion of the interior volume 103 during semiconductor processing. For example, the processing equipment 104 may include a deposition shield or multiple types of protection equipment.

In some semiconductor processes, it is desirable to maintain the temperature within the semiconductor processing chamber 102 within a selected range. In some cases, the heater 108 may be employed to heat the semiconductor processing chamber 102 or wafer 106 to a selected temperature. However, in some cases, the semiconductor process may generate excessive heat, resulting in temperatures above the selected range. In such cases, it may be difficult to maintain the selected temperature range using conventional techniques.

In some embodiments, the processing apparatus 104 includes a heat pipe 112 in order to assist in controlling the temperature within the semiconductor processing chamber 102. The heat pipe 112 facilitates conducting heat from the interior volume of the semiconductor process chamber 102 to the exterior of the semiconductor process chamber 102. Thus, the heat pipe 112 enhances the ability to transfer heat from within the semiconductor process chamber 102 to outside the semiconductor process chamber 102. Which in turn enables tighter control of the temperature within the semiconductor process chamber 102. The temperature sensor 110 senses the temperature within the semiconductor process chamber 102 and communicates a temperature signal to the control system 114. The control system 114 controls the operation of the heater 108 in response to the temperature signal from the temperature sensor 110. In particular, the heater 108 may operate at reduced risk, and the heater 108 will generate more heat than dissipated from within the semiconductor process chamber 102. Thus, if the temperature within the semiconductor process chamber 102 exceeds a selected temperature range or temperature threshold, the output of the heater 108 may decrease and the heat pipe 112 may rapidly transfer heat from the semiconductor process chamber 102 so that the temperature quickly returns to the selected temperature range. In this manner, the temperature within the semiconductor processing chamber 102 may be maintained within a selected temperature range during semiconductor processing.

Semiconductor processing equipment within semiconductor processing chambers often include various metal components. The metal component is selected to be sufficiently robust to withstand the conditions within the semiconductor processing chamber. The metal components may be selected to withstand high temperatures, vacuum conditions, strong electric fields, strong magnetic fields, and particle bombardment.

In one embodiment, one or more heat pipes 112 are coupled to one or more of the metal components within the semiconductor processing chamber 102. The heat pipe 112 is in physical contact with one or more of the metal components within the semiconductor processing chamber 102. The heat pipe 112 receives heat from and transfers heat from one or more metal components.

In one embodiment, one or more heat pipes 112 extend between one or more metal components and the exterior of the semiconductor process chamber 102. The heat pipe 112 transfers heat from one or more metal components within the semiconductor process chamber 102 to outside the semiconductor process chamber 102 by a process that will be explained in more detail below. One or more heat pipes 112 may be connected to a heat sink or another type of physical object external to the semiconductor processing chamber 102. One or more heat pipes transfer heat from one or more metal components within the semiconductor process chamber 102 to one or more physical objects outside the semiconductor process chamber 102.

In one embodiment, the one or more heat pipes 112 transfer heat from one or more metal components within the semiconductor process chamber 102 to another region within the semiconductor process chamber 102. In other words, the heat pipe 112 may transfer heat from one region of the semiconductor process chamber 102 to another region of the semiconductor process chamber 102. In such cases, there may be specific areas or components of the semiconductor process chamber 102 from which heat needs to be transferred. The heat receiving region may be a region that absorbs more heat or is connected to other cooling systems that may transfer heat outside of the semiconductor processing chamber 102.

In one embodiment, one or more conventional metal components of the semiconductor process chamber 102 include a heat pipe 112. Accordingly, the heat pipe 112 may replace a portion of the conventional metal components of the semiconductor processing chamber 102. Additionally, or alternatively, the entire metal part may be replaced with the heat pipe 112. The heat pipe 112 may have a shape and structure that performs the function of conventional metal components replaced by the heat pipe 112. The heat pipe 112 is also sufficiently strong to withstand the high temperatures, vacuum conditions, strong electric fields, strong magnetic fields, ion bombardment, and other conditions that may exist within the semiconductor processing chamber 102. The heat pipe 112 may provide the additional benefit of facilitating heat transfer from the interior of the semiconductor process chamber 102 to the exterior of the semiconductor process chamber 102.

In one embodiment, the heat pipe 112 is part of a wall 116 of the semiconductor processing chamber 102. The wall 116 may at least partially define the interior volume 103 of the semiconductor processing chamber 102. The wall 116 may include one or more heat pipes 112. One or more heat pipes 112 conduct heat from inside the semiconductor process chamber 102 to outside the semiconductor process chamber 102.

In one embodiment, the wall 116 is a heat pipe 112, or a group of heat pipes 112. The inner surface of the wall 116 corresponds to the heat receiving area of one or more heat pipes. The outer surface of the wall 116 corresponds to the heat dissipation area of one or more of the heat pipes 112. Thus, the heat pipe 112 transfers heat received at the inner surface of the wall 116 to the outer surface of the wall 116. In this manner, the heat pipe 112 dissipates heat from the interior of the semiconductor process chamber 102 to the exterior of the semiconductor process chamber 102.

In one embodiment, the heat pipe 112 is a heat transfer element that combines the principles of heat conduction and phase change to efficiently transfer heat between two interfaces. The heat pipe 112 includes an interior volume that contains a working fluid. The heat pipe 112 operates by transferring heat to the working fluid at a heat receiving region and dissipating heat from the working fluid at a heat dissipating region. The working fluid transfers heat from the heat receiving region to the heat dissipating region. Thus, the heat pipe 112 includes a thermal interface and a cooling interface. The thermal interface corresponds to a heat receiving area or an area to be cooled. The cooling interface corresponds to a heat dissipation area or an area to which heat is transferred from the thermal interface via the working fluid.

In one embodiment, the heat pipe 112 operates by transferring heat to a working fluid, which is converted from a liquid to a gas or vapor at a thermal interface. The heat pipe 112 operates to further convert the working fluid from a gas or vapor to a liquid by transferring heat from the working fluid at a cooling interface. More particularly, as the working fluid circulates through the internal passage, the working fluid enters the heat receiving region in a liquid state or near the thermal interface. Heat is then transferred to the working fluid at the heat receiving area or thermal interface and the working fluid boils or vaporizes. The gaseous working fluid then flows through the channels toward the heat dissipation area or cooling interface. At the heat dissipation area or cooling interface, the gaseous working fluid dissipates heat until the working fluid condenses into a liquid form. The liquid working fluid is then absorbed by the capillary material within the heat pipe via capillary action. The liquid working fluid flows through the capillary material facing away from the thermal interface or heat receiving region. The liquid working fluid then passes through the channel towards the receiving area and continues to circulate again. In this way, the heat pipe 112 transfers heat from the receiving area to the heat dissipating area. This operation of the heat pipe 112 may effectively transfer heat from the interior volume of the semiconductor process chamber 102 to the exterior of the semiconductor process chamber 102. Additionally or alternatively, the heat pipe may be effective to transfer heat from one region inside the semiconductor process chamber 102 to another region inside the semiconductor process chamber 102.

Fig. 2A is a diagram of a semiconductor processing system 100 according to one embodiment. The semiconductor processing system 100 includes a semiconductor processing chamber 102. The semiconductor processing chamber 102 includes an interior volume 103. The semiconductor process chamber 102 further includes a wafer support 126 configured to hold the wafer 106.

In the embodiment of fig. 2A, the semiconductor processing system 100 is a PLASMA ENHANCED CHEMICAL Vapor Deposition (PECVD) system. A dielectric layer may be deposited on the wafer 106 using a plasma enhanced chemical vapor deposition system. The dielectric layer may comprise silicon oxide, silicon nitride, or other types of dielectric layers. Other types of layers may be deposited or other types of semiconductor processes may be performed using the semiconductor processing system 100 without departing from the scope of the present disclosure.

In one embodiment, the semiconductor processing system 100 includes a bottom electrode 127, a top electrode 128, and a gas source 130. In the embodiment of fig. 2A, the top electrode 128 is a showerhead electrode including a plurality of vent holes 134 to enable gas to flow from the gas source 130 into the interior volume 103. The bottom electrode 127 and the top electrode 128 are coupled to a radio frequency power source. The radio frequency power source may be coupled to the control system 114 or may be part of the control system 114.

During the PECVD process, deposition gases are delivered from the gas source 130 into the interior volume 103 through the vent holes 134 of the top electrode 128. The rf power source generates a plasma from the deposition gas within the interior volume 103 by applying a voltage between the bottom electrode 127 and the top electrode 128. Deposition of the plasma enhanced film on the wafer 106. In one embodiment, the semiconductor process chamber 102 is a deposition shield 120. The deposition shield 120 is disposed within the interior volume 103, surrounding the wafer support 126 and the wafer 106. The deposition shield 120 rests on the chamber walls 116. When the lid 124 is raised or removed, the deposition shield 120 may be lowered into the interior volume 103. The shape of the deposition shield 120 may be further understood from fig. 2B and 2C, as described in further detail below. The deposition shield 120 may include an exhaust grid 143. The exhaust grid 143 may include apertures or holes that enable exhaust gases from the deposition process to pass through the interior volume 103 of the deposition chamber. The exhaust grid 143 may be an integral part of the deposition shield 120, or may be a separate part connected to the deposition shield 120.

In one embodiment, the deposition shield 120 prevents material from accumulating on the walls 116 of the semiconductor process chamber 102. For example, during an etching or deposition process, etching material or material supplied into the interior volume 103 may accumulate on the inner surfaces of the walls 116. To prevent accumulation, the semiconductor processing chamber 102 includes a deposition shield 120. The deposition shield 120 may be easily removed and replaced, or removed and cleaned after each semiconductor process.

In some cases, it may be desirable to maintain the temperature of the wafer 106 within a selected temperature range during the deposition process. The heater 108 is operable to provide heat to the interior volume 103. In particular, the heater liner 111a, 111b may be coupled to the deposition shield 120. The heater pads 111a, 111b may include resistive elements. The current may be transferred to the heater liner 111a, 111b via the wires 109a, 109 b. When an electric current passes through the resistive elements of the heater liner 111a and the heater liner 111b, the resistive elements generate heat, which is transferred to the interior volume 103 through the deposition shield 120. Thus, the heater liner 111a and the heater liner 111b may be considered as part of the heater 108. Many other types of heaters may be utilized without departing from the scope of the present disclosure.

In embodiments of a low temperature PECVD process for depositing a silicon oxide layer on the wafer 106, it may be desirable to maintain the temperature of the interior volume 103 between 50 ℃ and 70 ℃. Accordingly, the control system 114 may intermittently or continuously operate the heater 108 to heat the wafer 106. In some cases, however, the PECVD process can result in excessive heat generation that heats the interior volume to a temperature that exceeds the desired temperature range. Resulting in erroneous deposition of the silicon oxide layer.

To facilitate rapid dissipation of heat from the interior volume 103, the deposition shield 120 includes a heat pipe structure. The heat pipe structure transfers heat from the interior volume surrounded by the deposition shield 120 to the outside of the deposition shield 120. Thus, the deposition shield 120 is a heat pipe 112. The deposition shield 120 includes a first surface 140 and a second surface 142. The first surface 140 may be considered an inner surface. The second surface 142 may be considered an outer surface.

In one embodiment, the deposition shield is a flat plate heat pipe. The flat plate heat pipe includes a vapor chamber between a first surface 140 and a second surface 142. As described in greater detail below with respect to fig. 3A and 3B, the vapor chamber transfers heat from the first surface 140 to the second surface 142.

The deposition shield 120 can include a top surface 147 and a stepped surface 145. The deposition shield 120 has a shape that enables the deposition shield 120 to be lowered into the process chamber 102 and stably supported by the chamber walls 116. May be removed from the semiconductor process chamber 102 and the deposition shield 120 cleaned between deposition processes or after certain specific deposition processes. The deposition shield 120 may have shapes and components other than those described above without departing from the scope of the present disclosure.

The lid 124 rests on the top surface 147 of the deposition shield 120. In fig. 2A, the cover 124 is shown as a single piece. In practice, however, the lid 124 may include various components coupled together, to the deposition shield 120, and to the top electrode 128.

In one embodiment, wall 116 includes an inner surface 144 and an outer surface 146. The wall 116 may be cylindrical. The cylindrical chamber walls may surround the deposition shield 120 and may partially define the interior volume 103.

In one embodiment, the wall 116 includes a heat pipe structure. The heat pipe structure transfers heat from the interior volume 103 surrounded by the wall 116 to the exterior of the wall 116. Thus, the wall 116 may be the heat pipe 112. The heat pipe 112 may include a vapor chamber between an inner surface 144 and an outer surface 146. The steam chamber transfers heat from the inner wall 144 to the outer surface 146.

Although not shown in fig. 2A, the semiconductor process chamber 102 may include other types of heat pipes 112 than those described above. As will be described in more detail below, other types of heat pipes 112 may include heat pipes other than flat plate vapor chamber types.

Fig. 2B is a top view of the deposition shield 120 of fig. 2A according to an embodiment. The top view of fig. 2B shows a generally annular deposition shield 120. The exhaust grid 143 at the bottom of the deposition shield 120 defines openings 149. Openings 149 encircle the wafer support 126 when the deposition shield 120 is lowered into the deposition chamber.

The deposition shield 120 has an outer diameter (diameter D1). The outer diameter (diameter D1) corresponds to the diameter of the top surface 147 of the deposition shield 120. Diameter D1 may have a range between 340mm and 400 mm. The diameter D1 of the deposition shield 120 may have other values without departing from the scope of the present disclosure. In some embodiments, the deposition shield 120 has an inner diameter at the top surface 147 of less than 400mm or less than 340 mm. The inner diameter of the deposition shield 120 at the top surface 147 may have other values without departing from the scope of the present disclosure. The outer diameter of the deposition shield 120 at the stepped surface is less than the outer diameter D1 (diameter D1) and greater than the inner diameter of the deposition shield 120 at the top surface 147. The deposition shield 120 has an inner diameter at the stepped surface (i.e., the inner surface (first surface 140), which is smaller than the inner diameter of the deposition shield 120 at the top surface 147, and which is smaller than the outer diameter of the deposition shield 120 at the second surface 142. In some embodiments, the inner diameter of the inner surface (first surface 140) of the deposition shield 120 is less than 330mm or less than 310mm. The inner diameter of the inner surface (first surface 140) of the deposition shield 120 may have other values without departing from the scope of the present disclosure.

The opening 149 has a diameter D2. The diameter D2 is defined by the inner edge of the exhaust grid 143. Diameter D2 may have a range between 310mm and 330 mm. The diameter D2 may have other values without departing from the scope of the present disclosure. The exhaust grill 143 may have a width W1. The width W1 may have a value between 20mm and 50 mm. The width W1 may have other values without departing from the scope of the present disclosure.

Fig. 2C is a side view of the deposition shield 120 of fig. 2A according to one embodiment. The side view of fig. 2C shows the slots 121 in the deposition shield 120. When the deposition shield 120 is positioned in the deposition chamber, the wafer 106 may be placed on the wafer support 126 by passing the wafer 106 through the slots 121. The walls 116 of the deposition chamber may also include openings or ports through which wafers may pass from outside the deposition chamber through the slots 121. The deposition shield 120 may have other shapes and configurations without departing from the scope of the present disclosure.

The deposition shield 120 has an overall height H1. The height H1 corresponds to the distance between the top surface 147 and the bottom of the exhaust grid 143. In some embodiments, the height H1 may have a value between 200mm and 300 mm. The height H1 may have other values without departing from the scope of the present disclosure.

Fig. 2D is a schematic diagram of a heater liner 111a and a heater liner 111b according to an embodiment. For clarity, in fig. 2D, the heater liner 111a and the heater liner 111b are not shown coupled to the deposition shield 120. When in use, as shown in FIG. 2A, the heater liner 111a and the heater liner 111b are coupled to opposite sides of the outer surface (second surface 142) of the deposition shield 120. In other embodiments, more than two heater liners are coupled to the deposition shield 120.

Each of the heater liner 111a and the heater liner 111b has a height H2 and a width W2. In some embodiments, the height H2 may be between 80mm and 150mm, and the width W2 may be between 80mm and 150 mm. Other values for the height H2 and width W2 may be used without departing from the scope of the present disclosure.

Each heater liner 111a, 111b has a heating element 151. In one embodiment, the heating element 151 is a resistive coil. When a current passes through the resistive coil, the resistive coil generates heat. The resistive coils are coupled to respective wires 109a and 109b. In one embodiment, each heater liner 111a, 111b consumes between 400W and 600W of power when generating heat. Other types of heating elements and other values of power consumption may be utilized by the heater pads 111a and 111b without departing from the scope of the present disclosure. Fig. 3A is a cross-sectional view of a portion of the deposition shield 120 of fig. 2A-2C according to an embodiment. In particular, FIG. 3A depicts an enlarged cross-sectional view of the internal structure between the inner surface (first surface 140) and the outer surface (second surface 142) of the deposition shield 120. In particular, in one embodiment, the internal structure of the deposition shield 120 between the inner surface (first surface 140) and the outer surface (second surface 142) is a heat pipe structure. According to one embodiment, the deposition shield 120 may be formed as a vapor chamber type heat pipe 112. Additionally or alternatively, the heat pipe 112 of fig. 3A may correspond to other types of processing equipment 104 included in the semiconductor process chamber 102.

In one embodiment, the deposition shield 120 includes a wicking material 152 positioned between the first surface 140 and the second surface 142. In particular, the wicking material 152 is positioned along the first surface 140. The capillary material is configured to draw in liquid via capillary action. As will be described in greater detail below, once in the wicking material 152, the liquid may pass through the wicking material 152. Capillary material 152 may also be positioned along second surface 142.

In one embodiment, the pillars 154 of wicking material 152 extend between the first surface 140 and the second surface 142. The pillars 154 of capillary material 152 can also be coupled to support bars or struts extending between the first surface 140 and the second surface 142. The pillars 154 of capillary material 152 may surround the support bars or struts. Thus, the support posts or struts are positioned within the pillars 154 of capillary material 152 and are not seen in the field of view of fig. 3A. The support columns or struts may help prevent the steam chamber between the first surface 140 and the second surface 142 from collapsing.

In one embodiment, the vapor channels 156 are positioned between the pillars 154 of the wicking material 152. As will be described in more detail below, the steam channel 156 supports a flow of steam between the first surface 140 and the second surface 142. In one embodiment, the vapor channel 156 forms a single continuous vapor channel that surrounds the column 154 of capillary material 152.

In one embodiment, the wicking material 152 is a sintered material. The sintered material may be a sintered metal. The sintered metal may include titanium, aluminum, iron, copper, or other types of metals. The sintered metal includes pores that allow the liquid to be drawn in via capillary action. The liquid may travel along the sintered metal via a network of holes. Sintered metals can be produced by producing a powder of metal and pressing the metal powders together at a temperature below the melting point of the metal. The resulting porous metal can wick liquid via capillary action. Other materials and processes may be used for sintering the materials without departing from the scope of the present disclosure.

In one embodiment, the wicking material 152 is a trench material. For example, the post 154 may include a groove extending along the length of the post in a direction between the second surface 142 and the first surface 140. The channels may wick liquid. The liquid may then travel along the length of the groove between the second surface 142 and the first surface 140. The trench material may include a metal such as titanium, aluminum, copper, iron, or other types of metals. The trench material may comprise other types of metals or materials other than metals without departing from the scope of this disclosure. The trench material may also be a sintered material.

In one embodiment, the wicking material 152 comprises a wrapped screen. In this case, the wicking material 152 comprises a screen with a plurality of holes. The screen is then wrapped. The screen may wick liquid via capillary action. Once in the wicking material 152, the liquid may pass through a network of holes or pores in the posts 154 between the second surface 142 and the first surface 140. The wicking material 152 may comprise other types of wicking material than mesh, sintered material, or fluted material without departing from the scope of this disclosure.

In one embodiment, the thickness of the heat pipe 112 is between 2mm and 50 mm. Thus, the deposition shield 120, a flat plate vapor chamber tube configured to be wrapped in a cylinder, may have a thickness similar to conventional deposition shields. In addition, flat plate vapor chamber heat pipes may be used for other components of the semiconductor process chamber 102 without departing from the scope of the present disclosure.

In one embodiment, heat pipe 112 includes a working fluid in a vapor chamber between first surface 140 and second surface 142. During operation of the heat pipe 112, the working fluid repeatedly transitions between a gaseous state and a liquid state while circulating through the vapor chamber between the first surface 140 and the second surface 142. The working fluid may be selected based on the desired temperature range in the environment in which the heat pipe 112 is placed. In one embodiment, to achieve a temperature range between-70 ℃ and 200 ℃, the working fluid may include water, freon, NH ₃、CH₃COCH₃、CH₃OH、C₂H₅ OH, and C ₇H₁₆. In one embodiment, to achieve a temperature range between 200 ℃ and 500 ℃, the working fluid may include naphthalene, a dado heat carrier (Downtherm), thermex, sulfur, and mercury. In one embodiment, to achieve a temperature range between 500 ℃ and 1000 ℃, the working fluid may include cesium, rubidium, potassium, and sodium. Other working fluids than those described above may be utilized for various temperature ranges without departing from the scope of the present disclosure.

The deposition shield 120 has a thickness T1. The thickness T1 corresponds to the distance between the outer surface (second surface 142) and the inner surface (first surface 140) of the deposition shield 120. The thickness T1 may have a value between 5mm and 15 mm. Other thicknesses are possible without departing from the scope of this disclosure.

The pillars 154 have a thickness T2. The thickness T2 may have a value between 2mm and 10mm, although other values are possible without departing from the scope of the present disclosure.

The wicking material 152 adjacent to the inner surface (first surface 140) of the deposition shield 120 may have a width W3 at a location between adjacent posts 154. The width W3 may have a value between 2mm and 5mm, although other values may be utilized without departing from the scope of the present disclosure.

The steam channel 156 has a height H3. Height H3 corresponds to the distance between adjacent posts 154. The height H3 may have a value between 5mm and 10mm, although other values of the height H3 may be utilized without departing from the scope of the present disclosure.

FIG. 3B is a schematic diagram of the deposition shield 120 of FIG. 3A, illustrating operation of the heat pipe, according to one embodiment. In fig. 3B, the first surface 140 is a hot surface or heat receiving side of the heat pipe 112. The second surface 142 is a cooling surface or a heat-dissipating side of the heat pipe 112.

In one embodiment, the heat 160 received by the heat pipe 112 is depicted as a wavy line incident on the first surface 140 of the heat pipe 112. The heat pipe 112 absorbs heat 160. The heat 162 dissipated by the heat pipe 112 is depicted as a wavy line away from the second surface 142. Although not shown in fig. 3B, the heat pipe 112 may be in physical contact with a solid material on one or both of the surfaces (first surface 140, second surface 142).

In one embodiment, the flow of working fluid and heat transfer mechanisms within heat pipe 112 are depicted by arrows 166 and 168. An arrow 166 directed toward the second surface 142 depicts the working fluid in a vapor or gaseous state traveling in the vapor channel 156 toward the second surface 142. Arrows 168 directed toward the first surface 140 depict the working fluid in a liquid state traveling within the pillars 154 of capillary material 152 toward the first surface 140.

When heat 160 is received at first surface 140, the working fluid absorbs heat 160 and transitions from a liquid state to a vapor or gaseous state. The transition of materials from liquid to gaseous requires a relatively large amount of heat according to the physical phase change principle. Thus, the working fluid absorbs a significant amount of heat as it transitions between liquid and gaseous states at the receiving area or hot surface corresponding to the first surface 140.

In one embodiment, after the working fluid has been converted to a gaseous state, the working fluid flows through vapor passage 156 toward second surface 142. The direction of flow of the gaseous working fluid is a result of the pressure differential within the vapor chamber. The pressure is higher in the receiving area. The pressure is lower in the heat dissipation area. As will be described in more detail below, is based in part on the fact that the working fluid becomes liquid in the heat dissipation area.

In one embodiment, as the gaseous working fluid approaches the second surface 142 within the vapor channel 156, the gaseous working fluid begins to transfer heat to the second surface 142. After the working fluid has transferred a sufficient amount of heat, the working fluid transitions from a vapor or gaseous state to a liquid state. The transition from the gaseous state to the liquid state requires a great deal of heat dissipation. Thus, a large amount of thermal energy is transferred when the working fluid is converted to a liquid state. Heat 162 is heat dissipated from second surface 142.

In one embodiment, as the working fluid transitions to a liquid state at the second surface 142, the working fluid is absorbed by the capillary material 152 in the column 154. The liquid working fluid is absorbed by the wicking material 152 via capillary action. The liquid working fluid then flows through the capillary material of the column 154 toward the first surface 140. When the liquid working fluid reaches the first surface 140, the liquid working material absorbs heat 160 and converts to vapor or gas and repeats the cycle of absorbing and dissipating heat. In this way, a flat plate vapor chamber heat pipe (heat pipe 112) may transfer heat from one side of the heat pipe 112 to the other.

As described above, in one embodiment, the wall 116 may include a heat pipe 112 as shown in FIGS. 3A and 3B. In particular, the walls 116 may comprise flat plate vapor chamber heat pipes (heat pipes 112) that may transfer a substantial amount of heat from the interior volume 103 of the semiconductor processing chamber 102 to the exterior of the semiconductor processing chamber 102. Other types of heat pipes than those described above may be utilized without departing from the scope of the present disclosure. Additionally, other components of the semiconductor processing chamber may include heat pipes without departing from the scope of the present disclosure.

Fig. 4A is a cross-sectional view of a discrete heat pipe (heat pipe 112) according to an embodiment. According to one embodiment, the heat pipe 112 is formed as a single pipe heat pipe 112. The heat pipe 112 of fig. 4A may be included as part of the processing apparatus 104 of the semiconductor process chamber 102. The heat pipe 112 may be positioned adjacent to the processing apparatus 104 of the semiconductor process chamber 102 and may transfer heat from the processing apparatus 104 of the semiconductor process chamber 102. In one embodiment, the heat pipe 112 physically supports the positioning of the processing apparatus 104 within the semiconductor processing chamber 102. Those skilled in the art will recognize that the heat pipe 112 may be utilized in many ways and in conjunction with many components within the semiconductor processing chamber 102 in accordance with the present disclosure without departing from the scope of the present disclosure. The heat pipe 112 may be placed in an environment where the heat pipe receives heat at a heat receiving region or surface 170 and the heat pipe 112 dissipates heat at a heat dissipating region or surface 172.

In an embodiment, the heat pipe 112 may be positioned between the deposition shield 120 and the wall 116. In this embodiment, the heat receiving region or hot surface 170 is the second surface 142 of the deposition shield 120. The heat dissipating area or cooling surface 172 is the inner surface of the wall 116. In this embodiment, the heat pipe 112 may be positioned below the heater liner 111a between the deposition shield 120 and the wall 116. The heat pipe 112 receives heat from the second surface 142 of the deposition shield 120 and dissipates heat to the wall 116. In this manner, the heat pipe 112 may facilitate heat dissipation from the interior of the process chamber to the exterior of the process chamber. In an embodiment, a plurality of discrete heat pipes (heat pipes 112) may be placed between the deposition shield 120 and the wall 116. The heat pipe 112 may be placed at other locations to facilitate heat dissipation from the interior of the process chamber to the exterior of the process chamber.

In one embodiment, the heat pipe 112 separates the internal vapor channels 156 and includes wicking material 152 positioned along the inner surface of the heat pipe 112. The wicking material 152 is configured to wick liquid via capillary action. As will be described in greater detail below, once liquid enters the wicking material 152, it may pass through the wicking material 152.

In one embodiment, the wicking material 152 is a sintered material. The sintered material may be a sintered metal. The sintered metal may include titanium, aluminum, iron, copper, or other types of metals. The sintered metal includes pores that allow the liquid to be drawn in via capillary action. The liquid may travel along the sintered metal via a network of holes. Sintered metals can be produced by producing a powder of metal and pressing the metal powder together at a temperature below the melting point of the metal. The resulting porous metal, which can wick liquid via capillary action. Other materials and processes may be used for sintering the materials without departing from the scope of the present disclosure.

In one embodiment, the wicking material 152 is a trench material. The channels may wick liquid. The liquid may then travel along the length of the channel. The trench material may include a metal such as titanium, aluminum, copper, iron, or other types of metals. The trench material may comprise other types of metals or materials other than metals without departing from the scope of this disclosure. The trench material may also be a sintered material.

In one embodiment, the wicking material 152 comprises a wrapped screen. In this case, the capillary material comprises a screen with a large number of holes. The screen is then wrapped. The screen may wick liquid via capillary action. Once the liquid enters the wicking material 152, the liquid may pass through the network of holes or pores. The wicking material 152 may comprise other types of wicking material than mesh, sintered material, or fluted material without departing from the scope of this disclosure.

In one embodiment, heat pipe 112 includes a working fluid in a vapor chamber between first surface 140 and second surface 142. During operation of the heat pipe 112, the working fluid repeatedly transitions between gaseous and liquid states while passing through the internal circulation between the heat receiving region (hot surface 170) and the heat dissipating region (cold surface 172). The working fluid may be selected based on the desired temperature range in the environment in which the heat pipe 112 is placed. In one embodiment, to achieve a temperature range between-70 ℃ and 200 ℃, the working fluid may include water, freon, NH ₃、CH₃COCH₃、CH₃OH、C₂H₅ OH, and C ₇H₁₆. In one embodiment, to achieve a temperature range between 200 ℃ and 500 ℃, the working fluid may include naphthalene, a dado heat carrier (Downtherm), thermex, sulfur, and mercury. In one embodiment, to achieve a temperature range between 500 ℃ and 1000 ℃, the working fluid may include cesium, rubidium, potassium, and sodium. Other working fluids than those described above may be utilized for various temperature ranges without departing from the scope of the present disclosure.

In one embodiment, the heat pipe 112 has a length L. The length L corresponds to the distance between the first end 171 and the second end 173. The first end 171 is positioned at a heat receiving area or surface 170. The second end 173 is positioned at a heat dissipating region or cooling surface 172. The length L may be between 10mm and 30mm, although other lengths are possible without departing from the scope of the present disclosure. The capillary material may have a thickness T3. The thickness T3 may have a value between 1mm and 5mm, although other thicknesses are possible without departing from the scope of the present disclosure. The inner steam channel 156 may have a width W4. The width W4 may have a value between 3mm and 10mm, although other values may be utilized without departing from the scope of the present disclosure.

FIG. 4B is an annotated view of the heat pipe 112 of FIG. 4A, illustrating operation of the heat pipe, according to one embodiment. In one embodiment, the heat 160 received by the heat pipe 112 is depicted as a wavy line incident on the first surface 140 of the heat pipe 112. The heat pipe 112 absorbs heat 160. The heat 162 dissipated by the heat pipe 112 is depicted as a wavy line away from the second surface 142.

In one embodiment, the flow of working fluid and heat transfer mechanisms within heat pipe 112 are depicted by arrows 166 and 168. Arrows 166 directed toward the heat dissipation area (cooling surface 172) depict the working fluid in vapor or gaseous form traveling in the vapor channel 156 toward the heat dissipation area (cooling surface 172). Arrows 168 directed toward the heat receiving region (hot surface 170) depict the working fluid in a liquid state traveling within the wicking material 152 toward the heat receiving region (hot surface 170).

When heat 160 is received at the heat receiving region, the working fluid absorbs heat 160 and transitions from a liquid state to a vapor or gaseous state. The transition of materials from liquid to gaseous requires a relatively large amount of heat according to the physical phase change principle. Thus, the working fluid absorbs a significant amount of heat as it transitions between liquid and gaseous states at the receiving region of the hot surface 170.

In one embodiment, after the working fluid has been converted to a gaseous state, the working fluid flows through the vapor channel 156 toward the heat sink region (cooling surface 172). The direction of flow of the gaseous working fluid is a result of the pressure differential within the vapor chamber. The pressure is higher at the heat receiving region (hot surface 170). The pressure is lower in the heat dissipation area (cooling surface 172). As will be described in more detail below, is based in part on the fact that the working fluid becomes liquid in the heat dissipation area.

In one embodiment, as the gaseous working fluid approaches the heat dissipation area (cooling surface 172) within the vapor channel 156, the gaseous working fluid begins to transfer heat to the second surface 172. After the working fluid has transferred a sufficient amount of heat, the working fluid transitions from a vapor or gaseous state to a liquid state. The transition from the gaseous state to the liquid state requires a great deal of heat dissipation. Thus, a large amount of thermal energy is transferred when the working fluid is converted to a liquid state. Heat 162 is heat dissipated at the heat dissipation area (cooling surface 172).

In one embodiment, the working fluid is absorbed by the wicking material 152 as it transitions to a liquid state at the heat sink region (cooling surface 172). The liquid working fluid is absorbed by the wicking material 152 via capillary action. The liquid working fluid then flows through the wicking material 152 toward the heat receiving region. When the liquid working fluid reaches the heat receiving region, the liquid working material absorbs heat 160 and converts to vapor or gas, and the cycle of absorbing and dissipating heat is repeated. In this way, a flat plate vapor chamber heat pipe (heat pipe 112) may transfer heat from one side of the heat pipe 112 to the other.

Fig. 5 is a flow chart of a method 500 according to an embodiment. At step 502, the method 500 includes supporting a semiconductor wafer in a semiconductor processing chamber. One embodiment of a semiconductor processing chamber is the semiconductor processing chamber 102 of fig. 1. At step 504, the method 500 includes outputting heat into the semiconductor processing chamber through a heater. An example of a heater is heater 108 of fig. 1. At step 506, the method 500 includes performing a semiconductor process on a semiconductor wafer positioned within a semiconductor processing chamber. At step 508, the method 500 includes transferring heat from within the semiconductor processing chamber through the heat pipe. One embodiment of a heat pipe is heat pipe 112 of FIG. 3A.

In one embodiment, a semiconductor processing chamber includes a heater, a wall defining an interior volume, a wafer support positioned in the interior volume and configured to hold one or more semiconductor wafers, and a deposition shield positioned in the interior volume. The deposition shield includes a first surface, a second surface, and a heat pipe vapor chamber positioned between the first surface and the second surface.

In one embodiment, the heat pipe vapor chamber includes a capillary material, one or more channels, and a working fluid. In one embodiment, the heat pipe vapor chamber includes one or more struts extending between the first surface and the second surface. In one embodiment, the capillary material is coupled to one or more struts. In one embodiment, the capillary material is a sintered capillary material. In one embodiment, the capillary material is a grooved capillary material. In one embodiment, the wicking material comprises one or more screens. In one embodiment, the wicking material is a metal. In an embodiment, the deposition shield surrounds the wafer support, wherein a first surface of the deposition shield is closer to the wafer support than a second surface of the deposition shield.

In one embodiment, a semiconductor processing system includes a semiconductor processing chamber defining an interior volume, and a wafer support positioned within the semiconductor processing chamber and configured to hold a semiconductor wafer during semiconductor processing. The system includes a heater positioned to heat the interior volume, and a heat pipe positioned to receive heat from the interior volume.

In one embodiment, the semiconductor processing system further comprises a temperature sensor and a control system. The temperature sensor is configured to sense a temperature within the interior volume. The control system is coupled to the temperature sensor and the heater and is configured to control the heater in response to the temperature sensor. In one embodiment, the heat pipe is positioned within the interior volume. In one embodiment, the semiconductor processing system further includes a processing apparatus positioned within the interior volume and coupled to the heat pipe. In one embodiment, a semiconductor processing chamber includes a wall at least partially defining an interior volume, wherein a heat pipe is integral with the wall. In one embodiment, the heat pipe is a flat plate vapor chamber heat pipe. In one embodiment, the semiconductor processing chamber includes one or more of a thin film deposition chamber, a thin film etch chamber, and an ion implantation chamber. In one embodiment, a heat pipe includes a sealed interior chamber, a capillary material positioned in the interior chamber, and a working fluid positioned in the interior chamber.

In one embodiment, a method includes supporting a semiconductor wafer in a semiconductor processing chamber and outputting heat into the semiconductor processing chamber through a heater. The method includes performing a semiconductor process on a semiconductor wafer positioned within a semiconductor process chamber, and transferring heat from within the semiconductor process chamber through a heat pipe.

In one embodiment, the heat pipe is integrated with a deposition shield positioned within a semiconductor processing chamber. In one embodiment, a heat pipe includes an interior volume, a capillary material positioned in the interior volume, and a working fluid.

Principles of some embodiments of the present disclosure provide enhanced temperature control for semiconductor processing environments. Reliable control of the temperature of the semiconductor processing environment results in a semiconductor wafer that meets design specification characteristics. In addition, reliable temperature control results in uniform characteristics of the integrated circuits cut from the semiconductor wafer. Therefore, the integrated circuit has reliable performance, and few wafers and integrated circuits are scrapped due to poor temperature control. As described herein, a heat pipe implemented in a semiconductor processing environment can enhance dissipation of heat from the semiconductor processing environment. The temperature within the semiconductor processing environment is preferably controlled.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.

Claims

1. A semiconductor processing system, comprising:

A heater;

a wall defining an interior volume;

a wafer support positioned in the interior volume and configured to hold one or more semiconductor wafers, and

A deposition shield positioned in the interior volume and comprising:

A first surface;

A second surface, and

A heat pipe vapor chamber positioned between the first surface and the second surface, the heat pipe vapor chamber comprising:

a capillary material, wherein a plurality of pillars of the capillary material extend between the first surface and the second surface;

a continuous vapor passage positioned between and surrounding the columns of capillary material, and

A working fluid.

2. The semiconductor processing system of claim 1, wherein the continuous vapor channel is a single continuous vapor channel.

3. The semiconductor processing system of claim 1, wherein the heat pipe vapor chamber comprises one or more struts extending between the first surface and the second surface.

4. The semiconductor processing system of claim 3, wherein the capillary material is coupled to the one or more pillars.

5. The semiconductor processing system of claim 1, wherein the capillary material is a sintered capillary material.

6. The semiconductor processing system of claim 1, wherein the capillary material is a grooved capillary material.

7. The semiconductor processing system of claim 1, wherein the wicking material comprises one or more screens.

8. The semiconductor processing system of claim 1, wherein the wicking material is metal.

9. The semiconductor processing system of claim 1, wherein the deposition shield surrounds the wafer support, wherein the first surface of the deposition shield is closer to the wafer support than the second surface of the deposition shield.

10. A semiconductor processing system, comprising:

a semiconductor processing chamber defining an interior volume;

a wafer support positioned within the semiconductor process chamber and configured to hold a semiconductor wafer during a semiconductor process;

a heater positioned to heat the interior volume, and

A heat pipe positioned to receive heat from the interior volume, the heat pipe comprising:

A working fluid.

11. The semiconductor processing system of claim 10, further comprising:

A temperature sensor configured to sense a temperature within the interior volume, and

A control system is coupled to the temperature sensor and the heater and is configured to control the heater in response to the temperature sensor.

12. The semiconductor processing system of claim 10, wherein the heat pipe is positioned within the interior volume.

13. The semiconductor processing system of claim 10, further comprising a processing device positioned within the interior volume and coupled to the heat pipe.

14. The semiconductor processing system of claim 10, wherein the semiconductor processing chamber comprises a wall at least partially defining the interior volume, wherein the heat pipe is integral with the wall.

15. The semiconductor processing system of claim 14, wherein the heat pipe is a flat plate vapor chamber heat pipe.

16. The semiconductor processing system of claim 10, wherein the semiconductor processing chamber comprises one or more of:

a thin film deposition chamber;

A film etching chamber, and

An ion implantation chamber.

17. The semiconductor processing system of claim 10, wherein the height of the continuous vapor channel corresponds to the distance between adjacent pillars.

18. A method of processing a semiconductor wafer, comprising:

Supporting a semiconductor wafer in a semiconductor processing chamber;

Outputting heat into the semiconductor processing chamber through a heater;

Performing a semiconductor process on the semiconductor wafer positioned in the semiconductor processing chamber, and

Transferring heat from within the semiconductor processing chamber through a heat pipe comprising:

A working fluid.

19. The method of claim 18, wherein the heat pipe is integrated with a deposition shield positioned within the semiconductor processing chamber.

20. The method of claim 18, wherein the height of the continuous vapor channel corresponds to the distance between adjacent columns.