CN112649648A - Device and method for measuring satellite surface potential by using electronic deflection method - Google Patents
Device and method for measuring satellite surface potential by using electronic deflection method Download PDFInfo
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- CN112649648A CN112649648A CN201910967442.6A CN201910967442A CN112649648A CN 112649648 A CN112649648 A CN 112649648A CN 201910967442 A CN201910967442 A CN 201910967442A CN 112649648 A CN112649648 A CN 112649648A
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- 238000010586 diagram Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000005672 electromagnetic field Effects 0.000 description 4
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Abstract
本发明提出了一种利用电子偏转法测量卫星表面电位的装置及方法，该装置安装在卫星表面，所述装置包括电子枪、准直器、位置灵敏传感器、信号采集模块、位置计算模块和卫星表面电位计算模块；所述电子枪用于发射电子束；所述准直器用于对电子束进行聚焦、准直；所述位置灵敏传感器用于输出电子束受到卫星表面电位U的作用下发生偏转后，到达传感器不同位置的电流信号；所述信号采集模块用于采集位置灵敏传感器输出电流信号；所述位置计算模块用于根据采集的电流信号，计算出电子束偏离位置灵敏传感器的中心法线的距离；所述卫星表面电位计算模块用于根据电子束偏离位置灵敏传感器的中心法线的距离计算卫星表面电位。
The invention proposes a device and method for measuring the surface potential of a satellite by using an electron deflection method. The device is installed on the surface of the satellite, and the device includes an electron gun, a collimator, a position sensitive sensor, a signal acquisition module, a position calculation module and a satellite surface. Potential calculation module; the electron gun is used for emitting electron beam; the collimator is used for focusing and collimating the electron beam; Current signals arriving at different positions of the sensor; the signal acquisition module is used to collect the output current signal of the position sensitive sensor; the position calculation module is used to calculate the distance that the electron beam deviates from the center normal of the position sensitive sensor according to the collected current signal ; The satellite surface potential calculation module is used to calculate the satellite surface potential according to the distance of the electron beam from the center normal of the position sensitive sensor.
Description
Technical Field
The invention relates to the field of spaceflight, in particular to a device and a method for measuring satellite surface potential by using an electronic deflection method.
Background
The surface potential of the satellite is a key parameter for the on-orbit operation of the satellite, and the change of the surface potential reflects the influence of the space environment on the satellite, so that the surface potential is an important basis for evaluating the safety of the satellite. When the satellite surface potential is too high, or the satellite local surface potential is too high, there is a safety risk that a discharge will occur. Therefore, during the in-orbit operation of the satellite, the change of the surface potential thereof needs to be constantly monitored.
Currently, the detection method of the satellite surface potential roughly includes a capacitive voltage division measurement principle and an inductive capacitance measurement principle.
The principle of capacitive voltage division measurement is to directly measure the voltage on the surface of a satellite by using capacitive voltage division, and the principle is shown in fig. 1. The outer surface of the satellite is simulated by using the quartz glass material, the voltage drop on the voltage-dividing capacitor is measured, and the outer surface voltage of the quartz glass material is obtained through calculation, so that the surface potential of the satellite is equivalently obtained. The measurement method is actually equivalent measurement, and the obtained surface potential is not completely the true potential of the satellite surface.
The principle of the inductive capacitance measurement is that a vibratable metal sheet electrode is utilized, and under the driving of an oscillator, the capacitance between the metal sheet electrode and a tested charged body changes periodically, so that a periodically changing potential signal is induced on the metal sheet electrode. The principle of the method is shown in fig. 2, and the measured surface of the method is generally made of known satellite surface materials instead of directly taking the satellite surface as the measured surface.
With respect to a satellite surface with a certain area, the two methods only measure the potential of a "point" on the satellite surface, and cannot completely reflect the overall surface potential of the satellite. Therefore, a method for measuring the surface potential of the satellite in a 'plane' manner without changing the state of the surface to be measured is needed.
Disclosure of Invention
The present invention is directed to overcome the above technical problems, and provides a novel apparatus and method for measuring satellite surface potential based on the principle of electronic deflection.
In order to achieve the above object, embodiment 1 of the present invention provides a device for measuring a satellite surface potential by using an electron deflection method, the device being installed on a satellite surface, the device including an electron gun, a collimator, a position sensitive sensor, a signal acquisition module, a position calculation module, and a satellite surface potential calculation module;
the electron gun is used for emitting electron beams; the emission direction of the electron beam is consistent with the central normal direction of the position sensitive sensor;
the collimator is used for focusing and collimating the electron beam;
the position sensitive sensor is used for outputting current signals reaching different positions of the sensor after the electron beam deflects under the action of the satellite surface potential U;
the signal acquisition module is used for acquiring a current signal output by the position sensitive sensor;
the position calculation module is used for calculating the distance d of the electron beam deviating from the center normal of the position sensitive sensor according to the collected current signal;
and the satellite surface potential calculating module is used for calculating the satellite surface potential according to the distance of the electron beam deviating from the center normal of the position sensitive sensor.
As an improvement of the device, the device also comprises a logic control module which is used for controlling the emission of the electron gun and controlling the working time sequence of each module.
As an improvement of the above device, the output of the satellite surface potential calculating module is a satellite surface potential U:
where q is the electron charge, L is the distance between the electron beam emission home position and the position sensitive sensor, m is the electron mass, v0The initial velocity of the electron emission, D, is the distance of the edge of the position sensitive sensor from the satellite surface.
As an improvement of the device, the distance L between the initial position of the electron beam emission and the position sensitive sensor is adjustable, and the device is used for measuring the satellite surface potentials of satellites with different areas.
Based on the above device, embodiment 2 of the present invention provides a method for measuring a satellite surface potential by using an electron deflection method, the method including:
step 1) the electron gun is set at an initial velocity v0Emitting an electron beam;
step 2) after passing through the collimator, the electron beam deflects under the action of the surface potential U of the satellite and reaches the position sensitive sensor to output a current signal;
step 3) the signal acquisition module acquires a current signal output by the position sensitive sensor; the position calculation module calculates the distance d of the electron beam deviating from the center normal of the position sensitive sensor according to the acquired current signal;
and 4) the satellite surface potential calculating module calculates the satellite surface potential U according to the distance d of the electron beam deviating from the center normal of the position sensitive sensor:
wherein q is the electron charge and L is the electron beamDistance between the initial position of emission and the position-sensitive sensor, m is the electron mass, v0The initial velocity of the electron emission, D, is the distance of the edge of the position sensitive sensor from the satellite surface.
The invention has the advantages that:
1. the device of the invention is non-contact, and realizes the integral measurement of the surface potential of the satellite under the condition of not changing the surface state of the satellite;
2. the device has light weight and low power consumption, and can be adjusted to adapt to the surfaces of different satellites to be tested;
3. in practical application, the device of the invention needs to consider the influence of a space electromagnetic field and eliminate the influence in data calculation;
4. the invention firstly proposes to measure the surface potential of the satellite by utilizing the principle of electronic deflection.
Drawings
FIG. 1 is a schematic diagram of capacitance voltage division measurement;
FIG. 2 is a schematic diagram of the measurement of the induced capacitance
FIG. 3 is a block diagram of an apparatus for measuring surface potential of a satellite using an electronic deflection method according to the present invention;
fig. 4 is a schematic diagram of the operation of the apparatus of the present invention.
Detailed Description
The technical solution of the present invention will be described in detail below with reference to the accompanying drawings.
As shown in fig. 3, embodiment 1 of the present invention provides an apparatus for measuring a satellite surface potential by using an electron deflection method, the apparatus being installed on a satellite surface, the apparatus including an electron gun, a collimator, a position sensitive sensor, a signal acquisition module, a position calculation module, a satellite surface potential calculation module, and a logic control module;
the electron gun is used for emitting electron beams; the emission direction of the electron beam is consistent with the central normal direction of the position sensitive sensor;
the collimator is used for focusing and collimating the electron beam;
the position sensitive sensor is used for outputting current signals reaching different positions of the sensor after the electron beam deflects under the action of the satellite surface potential U;
the signal acquisition module is used for acquiring a current signal output by the position sensitive sensor;
the position calculation module is used for calculating the distance d of the electron beam deviating from the center normal of the position sensitive sensor according to the collected current signal;
and the satellite surface potential calculating module is used for calculating the satellite surface potential according to the distance of the electron beam deviating from the center normal of the position sensitive sensor.
And the logic control module is used for controlling the acquisition of the sensor signal, the logic of the surface potential calculation module and the work of the electron gun.
The distance between the electron emission initial position and the position-sensitive sensor is set to L. The L value can be adjusted according to the size of the surface of the satellite to be measured. The position sensitive sensor edge is at a distance D from the satellite surface. The initial direction of the electron gun emitting electrons coincides with the center normal direction of the position sensitive sensor.
The working principle of the device is shown in fig. 4, and an electron beam generated by an electron gun is focused and collimated by a collimator. The emitted electrons are then deflected by the satellite surface potential U. The satellite surface potential is negative, and the electrons deflect to the point a 1; when the satellite surface potential is positive, the electrons will deflect toward point a 2.
Embodiment 2 of the present invention provides a method for measuring a satellite surface potential by using an electron deflection method, including:
initial velocity of electron emission is v0With the known distance L, the time of flight t of the electrons from the emission to the position-sensitive sensor can be found to be:
setting the satellite surface potential U as negative, the electrons deflect to a point a1, and the distance d from the center normal of the point a1 can be measured by a position sensitive sensor.
Since D is small relative to L in practical applications, it can be assumed that a uniform electric field is generated by the satellite surface potential U in the space of the distance D. As can be seen from the formula of the deflection of charged particles in a uniform electric field,
in the formula (2), α is the acceleration of the electric field, q is the electron charge, E is the electric field intensity generated by the satellite surface potential U, and m is the electron mass.
Substituting the formula (1) into the formula (2),
the satellite surface potential U can be measured:
due to m, D, v0Q and L are known quantities, so that the surface potential U of the satellite can be obtained by measuring the deflection distance d through a position sensitive sensor.
By adjusting the size of the L, the measurement of the satellite surface potentials of different areas can be realized.
In the practical application process, due to the existence of the space electromagnetic field, the emitted electrons are influenced by the satellite surface potential and the space electromagnetic field to generate deflection. The deflection of the deflection relative to the action of the satellite surface potential is a small quantity, but in order to obtain the satellite surface potential with high precision, the influence of an electromagnetic field needs to be eliminated during data calculation.
In addition, in the practical application process, the size of the position sensitive sensor needs to be considered while adjusting L. If the value of L is too large, the electrons will deflect out of the edge of the position sensitive sensor when the size of the position sensitive sensor is relatively small, and measurement cannot be achieved.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and are not limited. Although the present invention has been described in detail with reference to the embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (5)
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114038730A (en) * | 2021-10-08 | 2022-02-11 | 中国科学院国家空间科学中心 | Omnidirectional electron emission device based on deflection grid |
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| CN1506688A (en) * | 2002-12-11 | 2004-06-23 | 中国科学院电子学研究所 | Electron beam deflection electric field sensor |
| CN102507717A (en) * | 2011-10-20 | 2012-06-20 | 中国航天科技集团公司第五研究院第五一〇研究所 | Device and method for on-orbit monitoring of charging of satellite material surface |
| CN103698589A (en) * | 2013-11-28 | 2014-04-02 | 兰州空间技术物理研究所 | Satellite surface potential monitoring device |
| CN105738941A (en) * | 2014-12-12 | 2016-07-06 | 中国科学院空间科学与应用研究中心 | Space energy particle energy spectrum measurement device based on electrostatic deflection |
| CN109298253A (en) * | 2018-12-04 | 2019-02-01 | 大理大学 | An electronic offset electric field strength sensor |
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- 2019-10-12 CN CN201910967442.6A patent/CN112649648A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62136745A (en) * | 1985-12-09 | 1987-06-19 | Nippon Telegr & Teleph Corp <Ntt> | Secondary ion mass spectrometer |
| CN1506688A (en) * | 2002-12-11 | 2004-06-23 | 中国科学院电子学研究所 | Electron beam deflection electric field sensor |
| CN102507717A (en) * | 2011-10-20 | 2012-06-20 | 中国航天科技集团公司第五研究院第五一〇研究所 | Device and method for on-orbit monitoring of charging of satellite material surface |
| CN103698589A (en) * | 2013-11-28 | 2014-04-02 | 兰州空间技术物理研究所 | Satellite surface potential monitoring device |
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| CN109298253A (en) * | 2018-12-04 | 2019-02-01 | 大理大学 | An electronic offset electric field strength sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114038730A (en) * | 2021-10-08 | 2022-02-11 | 中国科学院国家空间科学中心 | Omnidirectional electron emission device based on deflection grid |
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Application publication date: 20210413 |