CN112259486A - In-cavity wafer centering system and working method thereof - Google Patents
In-cavity wafer centering system and working method thereof Download PDFInfo
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- CN112259486A CN112259486A CN202011279004.XA CN202011279004A CN112259486A CN 112259486 A CN112259486 A CN 112259486A CN 202011279004 A CN202011279004 A CN 202011279004A CN 112259486 A CN112259486 A CN 112259486A
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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- H—ELECTRICITY
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- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
- H01L21/67265—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
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Abstract
一种腔内晶圆寻心系统及其工作方法，腔内晶圆寻心系统包括：主体腔；位于主体腔内的晶圆夹持平台，晶圆夹持平台的表面适于放置晶圆；贯穿晶圆夹持平台的若干位移孔；分别位于位移孔中的顶针，顶针适于在位移孔中往复移动，使顶针的顶头在高于晶圆夹持平台的上表面的位置至低于晶圆夹持平台的上表面的位置之间变化；若干光学定位单元，各个光学定位单元包括：光学探测部件；光学接收部件，光学探测部件适于向光学接收部件发射探测光，探测光适于部分照射在主体腔中的晶圆的边缘；修正单元，修正单元适于根据光学接收部件获取的光信息修正晶圆的位置。所述腔内晶圆寻心系统能够精确定位晶圆在主体腔中的位置，提高工艺重复性。
An intra-cavity wafer centering system and a working method thereof. The intra-cavity wafer centering system comprises: a main body cavity; a wafer clamping platform located in the main body cavity, and the surface of the wafer clamping platform is suitable for placing wafers; A number of displacement holes pass through the wafer clamping platform; the ejector pins are respectively located in the displacement holes, and the ejector pins are suitable for reciprocating movement in the displacement holes, so that the ejector head is higher than the upper surface of the wafer clamping platform to lower than the wafer clamping platform. The position of the upper surface of the circular clamping platform varies between positions; a plurality of optical positioning units, each optical positioning unit includes: an optical detection part; The edge of the wafer irradiated in the main body cavity; the correction unit, the correction unit is adapted to correct the position of the wafer according to the light information obtained by the optical receiving part. The in-cavity wafer centering system can precisely locate the position of the wafer in the main cavity, thereby improving process repeatability.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to an intracavity wafer center searching system and a working method thereof.
Background
In semiconductor manufacturing, a plurality of processes are involved, each of which is performed by a certain apparatus and process. Among them, the etching process is an important process in semiconductor manufacturing, such as a plasma etching process. The plasma etching process is to utilize reaction gas to generate plasma after obtaining energy, wherein the plasma comprises charged particles such as ions and electrons, neutral atoms, molecules and free radicals with high chemical activity, and an etching object is etched through physical and chemical reactions.
However, during plasma etching, the etching conditions at the edge of the wafer and the etching conditions at the center of the wafer are greatly different, and the etching conditions include: plasma density distribution, radio frequency electric field, temperature distribution, etc., thereby causing byproduct polymer to be deposited on the upper and lower surfaces and the side wall of the edge of the wafer during etching of the central region of the wafer. The deposition of the byproduct polymer can generate an accumulation effect along with the progress of the etching process, and when the thickness of the byproduct polymer reaches a certain degree, the adhesive force between the byproduct polymer and the wafer is deteriorated to cause the byproduct polymer to fall off, thereby causing a series of problems that the graph stability of the wafer is influenced, an etching chamber is polluted and the like.
In view of this, an edge etching process is introduced in the industry, and specifically, a wafer is placed in an edge etching apparatus, and the generated plasma etches the edge of the wafer while the etching of the center of the wafer is avoided as much as possible.
However, in the process of the edge etching process using the existing edge etching apparatus, the etching repeatability of the edge area of the wafer is poor.
Disclosure of Invention
The invention aims to provide an intracavity wafer centering system and a working method thereof, which can accurately position the position of a wafer in a main body cavity and improve the process repeatability.
In order to solve the above technical problem, the present invention provides an intracavity wafer centering system, comprising: a body cavity; the wafer clamping platform is positioned in the main body cavity, and the surface of the wafer clamping platform is suitable for placing a wafer; a plurality of displacement holes penetrating through the wafer clamping platform; the ejector pins are respectively positioned in the displacement holes and are suitable for reciprocating in the displacement holes, so that the ejector heads of the ejector pins are changed from a position higher than the upper surface of the wafer clamping platform to a position lower than the upper surface of the wafer clamping platform; a plurality of optical locating units, each optical locating unit comprising: an optical detection component; an optical receiving part adapted to emit probe light toward the optical receiving part, the probe light adapted to partially illuminate an edge of a wafer in a body cavity; a correction unit adapted to correct a position of the wafer based on the optical information acquired by the optical receiving member.
Optionally, the method further includes: and the ejector pin position adjusting piece is positioned at the bottom of the wafer clamping platform and is in contact with the bottom end of the ejector pin.
Optionally, in the system for centering a wafer in one cavity, the number of the displacement holes is at least three, and the number of the ejector pins is at least three.
Optionally, in an intracavity wafer centering system, the number of the plurality of optical positioning units is at least three.
Optionally, in the wafer centering system in one chamber, the number of the optical positioning units is four, and the four optical positioning units are uniformly distributed around the central axis of the wafer holding platform.
Optionally, the wafer centering system in the cavity is an edge etching reaction device; the intracavity wafer centering system further comprises: the movable upper electrode is positioned in the main body cavity, and the movable upper electrode and the wafer clamping platform are oppositely arranged; the radio frequency isolation ring is positioned in the main body cavity and positioned at the side part of the wafer clamping platform; a plasma confinement ring positioned within the body cavity at a bottom of an edge region of the movable upper electrode, the plasma confinement ring having a gap with the radio frequency isolation ring; a plurality of first detection channels extending through a top wall of the body cavity and an edge region of the movable upper electrode, a distance from the first detection channels to a center of the movable upper electrode being less than a distance from the plasma confinement ring to the center of the movable upper electrode; the second detection channels are positioned at the bottom of the first detection channel and correspond to the first detection channels one by one, and the second detection channels are positioned in the radio frequency isolation ring; the optical detection component is positioned above the first detection channel and covers part of the top surface of the main body cavity; the optical receiving component is located in the main body cavity and below the second detection channel.
Optionally, the method further includes: one side of the movable upper electrode, which faces the wafer clamping platform, is provided with a groove penetrating through the thickness of the movable upper electrode; the wafer centering system in the cavity also comprises a wafer protection disc positioned in the groove; the first gas inlet channel passes through the movable upper electrode, an outlet of the first gas inlet channel is positioned on the bottom surface of the movable upper electrode on the side part of the wafer protection disc, and the first gas inlet channel is used for introducing etching gas; and the second gas inlet channel penetrates through the movable upper electrode and the wafer protection disc and is used for introducing buffer gas.
The invention also provides a working method of the intracavity wafer centering system, which comprises the following steps: calibrating the positions of the plurality of optical positioning units; after the positions of the optical positioning units are calibrated, the ejector pin moves in the displacement hole, so that the top of the ejector pin is higher than the upper surface of the wafer clamping platform; after the top of the ejector pin is higher than the upper surface of the wafer clamping platform, the wafer is placed on the ejector pin; after the wafer is placed on the thimble, the optical detection component emits detection light to the optical receiving component, the detection light partially irradiates the edge of the wafer, and the optical receiving component acquires optical information aiming at the wafer; for the wafer placed on the thimble, the correcting unit corrects the position of the wafer according to the optical information acquired by the optical receiving component aiming at the wafer; after the correcting unit corrects the position of the wafer according to optical information acquired by the optical receiving component aiming at the wafer placed on the ejector pin, the ejector pin moves downwards to enable the wafer to fall on the upper surface of the wafer clamping platform; and in the process that the thimble moves downwards so that the wafer falls on the upper surface of the wafer clamping platform, the positions of the wafer are monitored in real time by the plurality of optical positioning units.
Optionally, the method for calibrating the positions of the plurality of optical locating units includes: providing a calibration wafer; placing a calibration wafer on the surface of the wafer clamping platform; performing a flow sheet test on the calibration wafer until the distance from the center of the calibration wafer to the central axis of the wafer clamping platform meets a first threshold value; after the distance from the center of the calibration wafer to the central axis of the wafer clamping platform meets a first threshold value, the position of each optical positioning unit is adjusted, so that the optical receiving component acquires optical information meeting the positioning requirement on the calibration wafer.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
according to the intracavity wafer centering system provided by the technical scheme of the invention, the wafer clamping platform is provided with a plurality of displacement holes penetrating through the wafer clamping platform, the displacement holes are internally provided with ejector pins, the ejector pins are suitable for reciprocating movement in the displacement holes, so that the ejector pins can change from the positions higher than the upper surface of the wafer clamping platform to the positions lower than the upper surface of the wafer clamping platform, and the ejector pins can lift a wafer from the wafer clamping platform or drop the wafer on the surface of the wafer clamping platform. The intracavity wafer centering system also has a plurality of optical positioning units, each optical positioning unit comprising: an optical detection component; an optical receiving part adapted to emit probe light toward the optical receiving part, the probe light adapted to partially illuminate an edge of a wafer in a body cavity; a correction unit adapted to correct a position of the wafer based on the optical information acquired by the optical receiving member. The optical positioning units can monitor the position of the wafer on the thimble and adjust and correct the position of the wafer in real time, so that the position of the wafer meets the requirements of the process. Therefore, the positions of the wafers are monitored by the optical detection component and the optical receiving component, and the positions of the wafers are corrected by the correction unit, so that the positions of the wafers in the main body cavity are basically consistent in the process of sequentially carrying out the process on the wafers, the wafer centering system in the cavity can accurately position and correct the positions of the wafers in the main body cavity, and the process repeatability is greatly improved.
Further, the wafer centering system in the cavity is an edge etching reaction device, the plasma confinement ring is located at the bottom of the edge area of the movable upper electrode, a gap is formed between the plasma confinement ring and the radio frequency isolation ring, and the plasma confinement ring is used for limiting the distribution of plasma. The wafer clamping platform is used for clamping a wafer. Radio frequency is fed from the wafer holding platform to charge the wafer. And plasma discharge is carried out in the area between the wafer clamping platform and the plasma confinement ring, and the edge of the wafer is etched. Etching gas is blown to the position near the edge of the wafer through the edge of the movable upper electrode and then is ionized by radio frequency to generate plasma, and etching of deposits on the edge of the wafer is achieved. The novel edge etching reaction device can ensure that plasma is uniformly and stably distributed among the upper electrode edge conductive electrode, the wafer and the electrostatic chuck, can only carry out etching reaction in a specific size range of a wafer edge area, and does not influence the wafer center area. Therefore, the etching precision of the edge area of the wafer is improved. Secondly, the etching efficiency of the edge area of the wafer is also improved. And thirdly, the positions of the wafers are monitored by the optical detection component and the optical receiving component and corrected by the correction unit, so that the positions of the wafers in the main body cavity are basically consistent in the process of successively etching the wafers, and the wafer centering system in the cavity can accurately position and correct the positions of the wafers in the main body cavity, thereby greatly improving the repeatability of the etching effect of the wafer edge.
In the working method of the intracavity wafer centering system provided by the technical scheme of the invention, after the positions of the plurality of optical positioning units are calibrated, the ejector pin moves in the displacement hole, so that the top of the ejector pin is higher than the upper surface of the wafer clamping platform, then, the wafer is placed on the ejector pin, then, the optical detection component emits detection light to the optical receiving component, the detection light partially irradiates the edge of the wafer, and the optical receiving component acquires optical information for the wafer; for the wafer placed on the thimble, the correcting unit corrects the position of the wafer according to the optical information acquired by the optical receiving component aiming at the wafer, so that the position of the wafer on the thimble meets the requirements of the process. After the correcting unit corrects the position of the wafer according to optical information acquired by the optical receiving component aiming at the wafer placed on the ejector pin, the ejector pin moves downwards to enable the wafer to fall on the upper surface of the wafer clamping platform, and in the process, the positions of the wafer are monitored by the plurality of optical positioning units in real time so as to ensure that the wafer does not deviate greatly in the downward movement process of the ejector pin and meet the process requirements. The positions of the wafers are monitored by the optical detection component and the optical receiving component, and the positions of the wafers are corrected by the correction unit, so that the positions of the wafers in the main body cavity are basically consistent in the process of sequentially carrying out the process on the wafers, the wafer centering system in the cavity can accurately position and correct the positions of the wafers in the main body cavity, and the process repeatability is greatly improved.
Drawings
FIG. 1 is a schematic cross-sectional view of an intracavity wafer centering system in accordance with an embodiment of the present invention;
FIG. 2 is a schematic top view of a wafer and an optical receiving element in accordance with an embodiment of the present invention;
FIG. 3 is a flow chart of the operation of an intracavity wafer centering system in accordance with yet another embodiment of the present invention.
Detailed Description
An embodiment of the present invention provides an intracavity wafer centering system, please refer to fig. 1 and fig. 2, which includes:
a body cavity;
a wafer holding platform 110 located in the main body cavity, wherein the surface of the wafer holding platform 110 is suitable for placing the wafer 10;
a plurality of displacement holes extending through the wafer clamping platen 110;
the ejector pins 170 are respectively located in the displacement holes, and the ejector pins 170 are adapted to reciprocate in the displacement holes, so that the heads of the ejector pins 170 are changed from a position higher than the upper surface of the wafer holding platform 110 to a position lower than the upper surface of the wafer holding platform 110;
a plurality of optical locating units, each optical locating unit comprising: an optical detection part 200; an optical receiving part 230, the optical detection part 200 being adapted to emit a detection light to the optical receiving part 230, the detection light being adapted to partially illuminate an edge of the wafer 10 in the body cavity; a correction unit adapted to correct the position of the wafer 10 based on the optical information acquired by the optical receiving member 230.
In this embodiment, the wafer centering system in the chamber is an edge etching reaction device. In other embodiments, the wafer centering system in the chamber may be other deposition devices or etching devices.
The intracavity wafer centering system further comprises: and an ejector pin position adjusting member 180 positioned at the bottom of the wafer clamping stage 110, wherein the ejector pin position adjusting member 180 contacts the bottom end of the ejector pin 170.
In one embodiment, in an intracavity wafer centering system, the number of displacement holes is at least three and the number of ejector pins 170 is at least three. The number of the ejector pins 170 is equal to the number of the displacement holes, and one ejector pin 170 is placed in one displacement hole. It should be noted that, in other embodiments, the number of the ejector pins 170 in one cavity wafer centering system may be one, two, or more than 3. When the number of the displacement holes in the wafer centering system in one cavity is at least three, the position stability of the wafer 10 on the ejector pin 170 is better.
The height of the thimble 170 is greater than the thickness of the wafer clamping platform 110, and the height of the thimble 170 is the distance from the top of the thimble 170 to the lower end of the thimble 170.
The material of the thimble 170 includes stainless steel, aluminum alloy, ceramic or quartz.
In one embodiment, the number of the optical positioning units in an intracavity wafer centering system is at least three, so that the optical positioning units can better monitor the position of the wafer 10.
In this embodiment, in an intracavity wafer centering system, the number of the optical positioning units is four, and four optical positioning units are uniformly distributed around the central axis of the wafer holding stage 110.
In other embodiments, the number of the optical positioning units in an intracavity wafer centering system is greater than four.
It should be noted that an optical positioning unit includes an optical detection component 200 and an optical receiving component 230.
The optical detection part 200 may be a laser generator. The optical receiving part 230 may be a photoelectric converter.
In this embodiment, the system for centering a wafer in a chamber is an edge etching reaction apparatus, and correspondingly, the system for centering a wafer in a chamber further includes: a movable upper electrode 100 positioned within the body cavity, the movable upper electrode 100 being disposed opposite the wafer chuck table 110; an RF isolation ring 130 positioned within the body cavity and laterally to the wafer chuck table 110; a plasma confinement ring 140 positioned within the body cavity, the plasma confinement ring 140 positioned at the bottom of the edge region of the movable upper electrode 100, the plasma confinement ring 140 having a gap with the rf isolation ring 130.
The side of the movable top electrode 100 facing the wafer chuck table 110 has a recess through a portion of the thickness of the movable top electrode 100. The intracavity wafer centering system further includes a wafer protection disk 120 positioned within the recess.
In this embodiment, the plasma confinement ring 140 is located between the edge region of the movable upper electrode 100 and the rf isolation ring 130. In other embodiments, the plasma confinement ring is located at the bottom of the edge region of the movable upper electrode, and the bottom region of the plasma confinement ring is located outside of the rf isolation ring 130. It should be noted that the rf isolation ring may also extend to the bottom of the wafer chuck platform.
In this embodiment, the system for centering an intra-cavity wafer further includes: a plurality of first detecting channels 210 penetrating the top wall of the body cavity and the edge region of the movable upper electrode 100, the distance from the first detecting channels 210 to the center of the movable upper electrode 100 being smaller than the distance from the plasma confinement ring 140 to the center of the movable upper electrode 100; and second detection channels 220 located at the bottom of the first detection channels 210 and corresponding to the first detection channels 210 one to one, wherein the second detection channels 220 are located in the rf isolation ring 130.
The optical detection component 200 is located above the first detection channel 210 and covers a part of the top surface of the main body cavity, and the optical receiving component 230 is located in the main body cavity and below the second detection channel 220. Specifically, in this embodiment, the optical receiving component 230 is located in the rf isolation ring 130 below the second detection channel 220.
The central axis of the first detection channel 210 is adapted to coincide with the central axis of the second detection channel 220.
In this embodiment, the rf isolation ring 130 covers a portion of the sidewall of the wafer chuck table 110; the intracavity wafer centering system further comprises: a wafer clamping platen guard ring 190 located on a portion of the upper surface of the rf isolation ring 130 and in contact with a portion of the side of the wafer clamping platen 110.
In this embodiment, the plasma confinement ring 140 is in contact with the bottom of the edge of the movable upper electrode 100, and specifically, the plasma confinement ring 140 is electrically connected or electrically insulated from the bottom of the edge of the movable upper electrode 100. When the plasma confinement ring 140 is electrically connected to the bottom of the edge of the movable upper electrode 100, the plasma confinement ring 140 not only can confine plasma in physical space, but also can electrically confine plasma. When the plasma confinement ring 140 is electrically connected to the bottom of the edge of the movable upper electrode 100, the plasma confinement ring 140 is an aluminum alloy annular metal member, a silicon annular member or a silicon carbide annular member, and the potentials of the plasma confinement ring 140 and the movable upper electrode 100 are the same. When the plasma confinement ring 140 is electrically insulated from the bottom edge of the movable upper electrode 100, the plasma confinement ring 140 is a ceramic ring or a quartz ring. In one embodiment, the plasma confinement ring is not in contact with the bottom of the edge of the movable upper electrode, and correspondingly, the plasma confinement ring isAn aluminum alloy annular metal member, a silicon annular member or a silicon carbide annular member, a ceramic annular member or a quartz annular member. Further, when the plasma confinement ring is an aluminum alloy annular metal piece, the inner surface of the plasma confinement ring is provided with a protective layer, and the protective layer is made of aluminum oxide or Y2O3. The protective layer can extend the useful life of the plasma confinement rings 140.
The plasma confinement ring 140 has a pumping channel therein; the area surrounded by the movable upper electrode, the radio frequency isolation ring and the plasma confinement ring at the side part of the wafer protection disc is a plasma area; the pumping channel is dimensioned such that the minimum distance that charged particles of the plasma region move when leaving the pumping channel is greater than the mean free path of the charged particles.
In other embodiments, the plasma confinement ring is a solid structure and the etch reaction byproducts are extracted from a gap between the plasma confinement ring and the rf isolation ring.
In this embodiment, the plasma confinement ring surrounds the wafer clamping platform, and when the wafer is etched, the plasma confinement ring surrounds the wafer.
In this embodiment, the system for centering wafer in chamber further includes: a first gas inlet channel 150, wherein the first gas inlet channel 150 passes through the movable upper electrode 100, an outlet of the first gas inlet channel 150 is located at the bottom surface of the movable upper electrode 100 at the side of the wafer protection disk 120, and the first gas inlet channel 150 is used for introducing etching gas; a second gas inlet passage 160 penetrating the movable upper electrode 100 and the wafer protection disk 120, the second gas inlet passage 160 being used for introducing a buffer gas.
The etching gas includes any one or combination of oxygen-containing gas and an associated fluorine-containing gas. The fluorine-containing gas includes a fluorocarbon-based gas such as CF4. The oxygen-containing gas comprises oxygen. The buffer gas comprises an inert gas.
Accordingly, the present embodiment further provides a working method of an intracavity wafer centering system (refer to fig. 1 and 2), which includes the following steps:
s01: calibrating the positions of the plurality of optical positioning units;
s02: after the positions of the optical positioning units are calibrated, the ejector pin 170 moves in the displacement hole, so that the top of the ejector pin 170 is higher than the upper surface of the wafer holding platform 110;
s03: after the top of the thimble 170 is higher than the upper surface of the wafer clamping platform 110, the wafer 10 is placed on the thimble 170;
s04: after the wafer 10 is placed on the thimble 170, the optical detection component 200 emits a detection light to the optical receiving component 230, the detection light partially irradiates the edge of the wafer 10, and the optical receiving component 230 acquires optical information for the wafer 10;
s05: for the wafer 10 placed on the ejector pin 170, the correction unit corrects the position of the wafer 10 according to the optical information acquired by the optical receiving part 230 for the wafer;
s06: after the correction unit corrects the position of the wafer 10 based on the optical information acquired by the optical receiving part 230 with respect to the wafer 10 placed on the ejector pin 170, the ejector pin 170 moves downward so that the wafer 10 falls on the upper surface of the wafer holding stage 110.
S07: during the downward movement of the ejector pins 170, the wafer 10 falls on the upper surface of the wafer holding stage 110, and the optical positioning units monitor the position of the wafer 10 in real time.
The method of calibrating the position of the number of optical locating units comprises: providing a calibration wafer; placing a calibration wafer on the surface of the wafer holding platform 110; performing a tape-out test on the calibration wafer until the distance from the center of the calibration wafer to the central axis of the wafer holding platform 110 meets a first threshold; after the distance from the center of the calibration wafer to the central axis of the wafer holding platform 110 satisfies the first threshold, the positions of the optical positioning units are adjusted so that the optical receiving component acquires the optical information satisfying the positioning requirement for the calibration wafer.
In one embodiment, a tape-out test is performed on a calibration wafer, specifically, after the calibration wafer is placed on the surface of the wafer holding platform 110, a polymer is deposited on the edge area of the calibration wafer; testing the lateral dimension of the polymer in the edge area of the calibration wafer; and adjusting the position of the calibration wafer placed on the surface of the wafer holding platform 110 according to the lateral dimension difference of the polymer in the edge area of the calibration wafer until the lateral dimension difference of the polymer in the edge area of the calibration wafer meets the threshold range, wherein when the lateral dimension difference of the polymer in the edge area of the calibration wafer meets the threshold range, the distance from the center of the calibration wafer to the central axis of the wafer holding platform 110 meets a first threshold value. It should be noted that, during the process of depositing the polymer on the edge area of the calibration wafer, the distance from the movable upper electrode 100 to the calibration wafer is kept at a small distance, so that the polymer is not deposited on the center area of the wafer, and the polymer is only deposited on the edge area of the wafer.
In another embodiment, a calibration wafer is placed in front of the surface of the wafer chuck table 110, the calibration wafer having a layer to be etched on its front surface; after the calibration wafer is placed on the surface of the wafer clamping platform 110, performing an edge etching process on the calibration wafer, and forming an etching groove in the edge region of the layer to be etched; testing the transverse size of the etching groove; and adjusting the position of the calibration wafer on the surface of the wafer holding platform 110 according to the difference of the lateral sizes of the etching grooves at each position until the difference of the lateral sizes of the etching grooves at each position meets the threshold range, wherein when the difference of the lateral sizes of the etching grooves at each position meets the threshold range, the first threshold is met by the distance from the center of the calibration wafer to the central axis of the wafer holding platform 110. It should be noted that, during the edge etching process of the calibration wafer, the distance from the movable upper electrode 100 to the calibration wafer is kept at a small distance, and only the edge region of the calibration wafer is etched, but not the center region of the calibration wafer.
The four optical detection parts are a first detection part, a second detection part, a third detection part, and a fourth detection part, and the four optical reception parts are a first reception part 230A, a second reception part 230B, a third reception part 230C, and a fourth reception part 230D.
When no wafer or calibration wafer blocks the wafer, the first detection component emits detection light, the light intensity received by the first receiving component 230A is B10, the second detection component emits detection light, the light intensity received by the second receiving component 230B is B20, the third detection component emits detection light, the light intensity received by the third receiving component 230C is B30, the fourth detection component emits detection light, and the light intensity received by the fourth receiving component 230D is B40.
After the distance from the center of the calibration wafer to the central axis of the wafer holding platform 110 meets a first threshold, adjusting the positions of the optical positioning units to enable the optical receiving component to obtain the optical information meeting the positioning requirement for the calibration wafer, specifically, fine-tuning the positions of the optical positioning units to enable the positions of the detection light spots emitted by the first detection component, the second detection component, the third detection component and the fourth detection component to meet the following conditions: the light spot line of the detection light emitted by the first detection component coincides with the first mark line slot of the calibration wafer, the light spot line of the detection light emitted by the second detection component coincides with the second mark line slot of the calibration wafer, the light spot line of the detection light emitted by the third detection component coincides with the third mark line slot of the calibration wafer, the light spot line of the detection light emitted by the fourth detection component coincides with the fourth mark line slot of the calibration wafer, the light intensity measured by the first receiving component is a set target light intensity, such as 50% B10, the light intensity measured by the second receiving component is a set target light intensity, such as 50% B20, the light intensity measured by the third receiving component is a set target light intensity, such as 50% B30, the light intensity measured by the fourth receiving component is a set target light intensity, such as 50% B40, and the requirement for position calibration of the optical positioning unit is met at this time.
After the wafer 10 is placed on the thimble 170, the optical detection component 200 emits a detection light to the optical receiving component 230, the detection light partially irradiates the edge of the wafer 10, and the optical receiving component 230 acquires optical information on the wafer 10; for the wafer 10 placed on the ejector pin 170, the correction unit corrects the position of the wafer 10 based on the optical information acquired by the optical receiving part 230 for the wafer. Specifically, at the initial moment when the wafer is placed on the thimble 170, the initial position of the wafer may be in a decentration state, and assuming that the light intensity received by the first receiving component (corresponding to the unmarked notch of the wafer) is 30% B10, and the light intensity received by the second receiving component (corresponding to the unmarked notch of the wafer) is 80% B20, the light intensity received by the third receiving component (corresponding to the unmarked notch of the wafer) is 70% B30, and the light intensity received by the fourth receiving component (corresponding to the unmarked notch of the wafer) is 20% B40, it indicates that the initial position of the wafer deviates from the calibration center point to quadrant 4; this deviation information is fed back to the correction system, and the correction unit adjusts the position of the wafer 10 according to the light information received by the first receiving device, the second receiving device, the third receiving device, and the fourth receiving device until the light intensity received by the first receiving device 230A (corresponding to the unmarked notch of the wafer) is (50 ± 1)% B10, the light intensity received by the second receiving device 230B (corresponding to the unmarked notch of the wafer) is (50 ± 1)% B20, the light intensity received by the third receiving device 230C (corresponding to the unmarked notch of the wafer) is (50 ± 1)% B30, and the light intensity received by the fourth receiving device 230D (corresponding to the unmarked notch of the wafer) is (50 ± 1)% B40.
In this embodiment, the detection light emits an extremely narrow linear light spot G, the width of the light spot G is within 50 microns, and the length of the light spot reaches mm level and is less than 2 times the size of the mark gap of the wafer, for example, the length of the light spot may reach 2 mm. The spot of the probe light may also be elliptical or circular.
During the downward movement of the ejector pins 170, the wafer 10 falls on the upper surface of the wafer holding stage 110, and the optical positioning units monitor the position of the wafer 10 in real time. In the process, in order to prevent the wafer from generating the slip sheet eccentricity phenomenon when moving up and down, the optical positioning units monitor the position of the wafer 10 in real time, and when the wafer completely falls on the upper surface of the wafer clamping platform 110, the change of the light spot intensity received by the four optical receiving components still satisfies the following conditions: the first receiving part 230A receives light intensity (corresponding to the unmarked notch of the wafer) of (50 ± 1)% B10, the second receiving part 230B receives light intensity (corresponding to the unmarked notch of the wafer) of (50 ± 1)% B20, the third receiving part 230C receives light intensity (corresponding to the unmarked notch of the wafer) of (50 ± 1)% B30, and the fourth receiving part 230D receives light intensity (corresponding to the unmarked notch of the wafer) of (50 ± 1)% B40.
And ending the whole wafer centering process.
Thereafter, the distance between the movable upper electrode 100 and the wafer holding platform 110 is adjusted to be within a threshold range, for example, such that the distance between the wafer and the wafer protection disk 120 is less than 1mm, such as 0.5 mm. After the distance between the movable upper electrode 100 and the wafer holding platform 110 is adjusted, etching gas is introduced through the first gas inlet channel 150, buffer gas is introduced through the second gas inlet channel 160, and radio frequency power is loaded to ignite plasma, so that the edge of the wafer is etched.
During etching, an etching gas is introduced through the first gas inlet passage 150, and a buffer gas is introduced through the second gas inlet passage 160. The advantages of this are: the first gas inlet channel 150 is introduced with etching gas to etch the edge region of the wafer, while the second gas inlet channel 160 is introduced with a portion of inert gas into the plasma generation region, the inert gas and the etching gas entering the plasma generation region are mixed to facilitate the plasma discharge process, and secondly, a portion of the inert gas enters the body cavity along the radial direction of the wafer, so that the plasma is blocked from moving outwards.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (9)
1. An intracavity wafer centering system, comprising:
a body cavity;
the wafer clamping platform is positioned in the main body cavity, and the surface of the wafer clamping platform is suitable for placing a wafer;
a plurality of displacement holes penetrating through the wafer clamping platform;
the ejector pins are respectively positioned in the displacement holes and are suitable for reciprocating in the displacement holes, so that the ejector heads of the ejector pins are changed from a position higher than the upper surface of the wafer clamping platform to a position lower than the upper surface of the wafer clamping platform;
a plurality of optical locating units, each optical locating unit comprising: an optical detection component; an optical receiving part adapted to emit probe light toward the optical receiving part, the probe light adapted to partially illuminate an edge of a wafer in a body cavity; a correction unit adapted to correct a position of the wafer based on the optical information acquired by the optical receiving member.
2. The system of claim 1, further comprising: and the ejector pin position adjusting piece is positioned at the bottom of the wafer clamping platform and is in contact with the bottom end of the ejector pin.
3. The system of claim 1, wherein the number of displacement holes is at least three and the number of lift pins is at least three in an intracavity wafer centering system.
4. The system of claim 1, wherein the number of optical positioning units in an intracavity wafer centering system is at least three.
5. The system of claim 4, wherein the number of the optical positioning units in an intracavity wafer centering system is four, and four optical positioning units are evenly distributed around the central axis of the wafer holding platform.
6. The system of claim 1, wherein the system is an edge etch reactor;
the intracavity wafer centering system further comprises: the movable upper electrode is positioned in the main body cavity, and the movable upper electrode and the wafer clamping platform are oppositely arranged; the radio frequency isolation ring is positioned in the main body cavity and positioned at the side part of the wafer clamping platform; a plasma confinement ring positioned within the body cavity at a bottom of an edge region of the movable upper electrode, the plasma confinement ring having a gap with the radio frequency isolation ring;
a plurality of first detection channels extending through a top wall of the body cavity and an edge region of the movable upper electrode, a distance from the first detection channels to a center of the movable upper electrode being less than a distance from the plasma confinement ring to the center of the movable upper electrode;
the second detection channels are positioned at the bottom of the first detection channel and correspond to the first detection channels one by one, and the second detection channels are positioned in the radio frequency isolation ring;
the optical detection component is positioned above the first detection channel and covers part of the top surface of the main body cavity; the optical receiving component is located in the main body cavity and below the second detection channel.
7. The system of claim 6, further comprising: one side of the movable upper electrode, which faces the wafer clamping platform, is provided with a groove penetrating through the thickness of the movable upper electrode; the wafer centering system in the cavity also comprises a wafer protection disc positioned in the groove; the first gas inlet channel passes through the movable upper electrode, an outlet of the first gas inlet channel is positioned on the bottom surface of the movable upper electrode at the side part of the wafer protection disc, and the first gas inlet channel is used for introducing etching gas; and the second gas inlet channel penetrates through the movable upper electrode and the wafer protection disc and is used for introducing buffer gas.
8. A method of operating an intracavity wafer centering system as claimed in any of claims 1 to 7, comprising:
calibrating the positions of the plurality of optical positioning units;
after the positions of the optical positioning units are calibrated, the ejector pin moves in the displacement hole, so that the top of the ejector pin is higher than the upper surface of the wafer clamping platform;
after the top of the ejector pin is higher than the upper surface of the wafer clamping platform, the wafer is placed on the ejector pin;
after the wafer is placed on the thimble, the optical detection component emits detection light to the optical receiving component, the detection light partially irradiates the edge of the wafer, and the optical receiving component acquires optical information aiming at the wafer;
for the wafer placed on the thimble, the correcting unit corrects the position of the wafer according to the optical information acquired by the optical receiving component aiming at the wafer;
after the correcting unit corrects the position of the wafer according to optical information acquired by the optical receiving component aiming at the wafer placed on the ejector pin, the ejector pin moves downwards to enable the wafer to fall on the upper surface of the wafer clamping platform;
and in the process that the thimble moves downwards so that the wafer falls on the upper surface of the wafer clamping platform, the positions of the wafer are monitored in real time by the plurality of optical positioning units.
9. The method of claim 8, wherein calibrating the positions of the plurality of optical positioning units comprises: providing a calibration wafer; placing a calibration wafer on the surface of the wafer clamping platform; performing a flow sheet test on the calibration wafer until the distance from the center of the calibration wafer to the central axis of the wafer clamping platform meets a first threshold value; after the distance from the center of the calibration wafer to the central axis of the wafer clamping platform meets a first threshold value, the position of each optical positioning unit is adjusted, so that the optical receiving component acquires optical information meeting the positioning requirement on the calibration wafer.
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