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CN1122172C - System and Method for Measuring Image Sensing Die Offset - Google Patents

System and Method for Measuring Image Sensing Die Offset Download PDF

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CN1122172C
CN1122172C CN 98123278 CN98123278A CN1122172C CN 1122172 C CN1122172 C CN 1122172C CN 98123278 CN98123278 CN 98123278 CN 98123278 A CN98123278 A CN 98123278A CN 1122172 C CN1122172 C CN 1122172C
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adjacent
sensor
image sensing
contact
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CN1256396A (en
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卢煜炀
梁乃悦
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BenQ Corp
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Acer Computer Co Ltd
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Abstract

A system for measuring the offset of image sensor chip includes a test pattern with a predetermined pattern. A contact image sensor module has a plurality of sensor chips arranged in a row, each sensor chip is configured with a plurality of sensors, which includes sensors located at the end points of two adjacent sensor chips. The control system is used for controlling the driving device to enable the sensor module to move relative to the test chart in a set direction, the sensor module scans the test chart and obtains signal waveforms sensed by the end point sensors of two adjacent sensing chips, and the distance between the end point sensors of the two adjacent sensing chips is calculated according to the signal waveforms.

Description

测量影像感测晶片偏移 的系统与方法System and method for measuring image sensor chip deflection

技术领域technical field

本发明涉及一种测量系统(measurement system),特别是涉及一种测量影像感测晶片偏移的系统(a system for measuring contactimage sensor chip shift)。The present invention relates to a measurement system, in particular to a system for measuring contact image sensor chip shift.

背景技术Background technique

在一般影像读取装置(image scanning device)方面,以影像扫描器为例,一般常使用下列三种元件来捕捉文件(subject document)的影像,例如用来照明文件的光源,影像感测器(image sensor),聚焦文件影像在影像感测器上的光学系统。而早期采用的影像感测器阵列(image sensor array),是以电荷耦合器件(CCD;charge-coupled device)形成。In terms of general image scanning devices, taking image scanners as an example, the following three components are often used to capture the image of a document (subject document), such as a light source for illuminating the document, an image sensor ( image sensor), an optical system that focuses the document image on the image sensor. The early image sensor array (image sensor array) is formed by charge-coupled device (CCD; charge-coupled device).

然而,以读取A4文件(宽210mm)的影像扫描装置为例,透镜系统必须把A4文件影像缩小至电荷耦合器件的影像感测器可以接收的程度,如此一来,透镜系统所需的光学距离(optical distance)约为300mm,因此整个影像扫描装置体积变得十分庞大,若利用反射镜的折射来缩小装置体积,则品质容易受温度变化和机械应力的影响。However, taking an image scanning device that reads an A4 file (210mm wide) as an example, the lens system must reduce the image of the A4 file to a level that the image sensor of the charge-coupled device can accept. The optical distance is about 300mm, so the volume of the entire image scanning device becomes very large. If the refraction of the mirror is used to reduce the volume of the device, the quality is easily affected by temperature changes and mechanical stress.

因此一种接触式影像感测器(CIS;contact image sensor)正逐渐取代前述电荷耦合器件的影像感测器,由于接触式影像感测器的宽度排列成与A4文件相同,因此只需使用等倍光学透镜来将文件影像投影在接触式影像感测器上,便能获取影像数据,因此,不仅构造较为简单,影像扫描装置体积也大为减小。Therefore, a contact image sensor (CIS; contact image sensor) is gradually replacing the image sensor of the aforementioned charge-coupled device. Since the width of the contact image sensor is arranged to be the same as that of the A4 document, it only needs to be used such as A double optical lens is used to project the document image on the contact image sensor to obtain the image data. Therefore, not only the structure is relatively simple, but the volume of the image scanning device is also greatly reduced.

如图1所示,接触式影像感测器模组20(module)一般先将影像感测晶片(image sensor chip)安排于面板(main board)10上,其中考虑到成品率和成本,以数个长度较短的影像感测晶片如12、14和16排成一列。接着以人工方式透过显微镜测量各影像感测晶片12、14或16,以确定是否有所偏移,随后再固定于框架(frame)15中并予以封胶固定。As shown in FIG. 1 , the contact image sensor module 20 (module) generally first arranges an image sensor chip (image sensor chip) on a panel (main board) 10. A shorter image sensor chip such as 12, 14 and 16 is arranged in a row. Then manually measure each image sensor chip 12 , 14 or 16 through a microscope to determine whether there is any deviation, and then fix it in a frame 15 and seal it with glue.

然而,当应用这些接触式影像感测器模组20于影像扫描装置(scanner)时,若发现扫描而得的影像发生落差或不连续的现象时,由于各影像感测晶片12、14和16已随面板10封装于框架15中,因此当怀疑前述现象是因影像感测晶片偏移所造成时,使用破坏性测量是唯一的方法,亦即将框架15拆卸下来直接以显微镜对影像感测晶片进行观察,但如此接触式影像感测器模组也已遭到毁损破坏而无法使用。However, when these contact image sensor modules 20 are applied to an image scanning device (scanner), if it is found that the scanned images have gaps or discontinuities, due to the image sensor chips 12, 14 and 16 It has been packaged in the frame 15 along with the panel 10, so when it is suspected that the aforementioned phenomenon is caused by the deviation of the image sensing chip, the only way to use destructive measurement is to disassemble the frame 15 and directly examine the image sensing chip with a microscope To observe, but the contact image sensor module has also been damaged and cannot be used.

发明内容Contents of the invention

有鉴于此,本发明之目的是为了解决上述问题,而提出一种测量影像感测晶片偏移的系统,其利用影像处理(image processing)的方式来测量各影像感测晶片间距的偏移量。即使接触式影像感测器模组已经封胶固定,仍可在不破坏其结构和功能的情形下测量出各影像感测晶片间距的偏移量。In view of this, the purpose of the present invention is to solve the above problems, and propose a system for measuring the offset of image sensing chips, which uses image processing (image processing) to measure the offset of the distance between each image sensing chip . Even if the contact image sensor module has been sealed and fixed, the offset of the distance between each image sensor chip can be measured without destroying its structure and function.

为实现上述目的,本发明提供一种测量影像感测晶片偏移的系统,包括一测试图,具有一既定图案。一接触式影像感测器模组,包括多条排成一列的感测晶片,每一感测晶片配置有多个感测器,包括位于相邻两感测晶片端点的感测器;一驱动装置;及一控制系统,用以控制驱动装置,使接触式影像感测器模组在一既定方向相对于测试图移动,该密封式影像感测器模组扫描该测试图,取得位于相邻两感测晶片端点的感测器所感测的信号波形,并计算相邻两感测晶片端点感测器的间距。To achieve the above objectives, the present invention provides a system for measuring the displacement of an image sensor chip, which includes a test pattern with a predetermined pattern. A contact image sensor module, including a plurality of sensing chips arranged in a row, each sensing chip is equipped with a plurality of sensors, including sensors located at the ends of two adjacent sensing chips; a drive device; and a control system, used to control the driving device, so that the contact image sensor module moves in a predetermined direction relative to the test pattern, and the sealed image sensor module scans the test pattern to obtain The signal waveforms sensed by the two sensors for sensing the end points of the chip are calculated, and the distance between two adjacent sensors for sensing the end points of the chip is calculated.

而本发明提供另一种测量影像感测晶片偏移的方法,包括下列步骤:提供一接触式影像感测器模组,其包括多条排成一列的感测晶片,每一感测晶片配置有多个感测器;提供一具有既定图案的测试图;使接触式影像感测器模组相对测试图在一既定方向移动,并扫描该测试图;取得位于相邻两感测晶片端点的感测器所感测的信号波形;及计算相邻两感测晶片端点的感测器的间距。The present invention provides another method for measuring the offset of an image sensing chip, which includes the following steps: providing a contact image sensor module, which includes a plurality of sensing chips arranged in a row, and each sensing chip is configured There are multiple sensors; a test pattern with a predetermined pattern is provided; the contact image sensor module is moved in a predetermined direction relative to the test pattern, and the test pattern is scanned; the signal waveform sensed by the sensor; and calculating the distance between the sensors of two adjacent sensing chip endpoints.

其中既定方向包括垂直测试图的方向,或水平测试图的方向。测试图的既定图案为黑白相间的条纹,其中黑白相间条纹为水平式条纹或斜向条纹,黑色及白色条纹的宽度可为等宽或不等宽。The predetermined direction includes the direction of the vertical test chart, or the direction of the horizontal test chart. The predetermined pattern of the test chart is black and white stripes, wherein the black and white stripes are horizontal stripes or diagonal stripes, and the width of the black and white stripes can be equal or unequal width.

此外在进行扫描时,可由接触式影像感测器模组对具有既定图案的测试图以一既定方向移动,以进行扫描;亦可由具有既定图案的测试图对接触式影像感测器模组以一既定方向移动,以进行扫描;亦可以光线(如激光等)合成的测试图来对影像感测器模组进行扫描。前述既定方向亦包括使接触式影像感测器模组与测试图呈一既定夹角的方向。In addition, when scanning, the contact image sensor module can move the test pattern with a predetermined pattern in a predetermined direction to scan; the contact image sensor module can also be scanned by the test pattern with a predetermined pattern. Scanning is performed by moving in a predetermined direction; the image sensor module can also be scanned with a test pattern synthesized by light (such as laser, etc.). The aforementioned predetermined direction also includes a direction that makes the contact image sensor module and the test pattern form a predetermined angle.

当扫描此黑色条纹时,对应的信号波形为低亮度区,而当扫描到该白色条纹时,对应的信号波形为高亮度区,至于当感测器涵盖到部分黑色条纹和白色条纹时,其对应的信号波形亮度为介于高亮度区和低亮度区之间。When the black stripe is scanned, the corresponding signal waveform is a low-brightness area, and when the white stripe is scanned, the corresponding signal waveform is a high-brightness area, and when the sensor covers part of the black and white stripes, its The corresponding signal waveform brightness is between the high brightness area and the low brightness area.

另计算相邻两感测晶片端点的感测器的间距的方式之一为,平移位于相邻两感测晶片端点的感测器所感测的信号波形,直至重叠为止,并计算其平移距离,以取得相邻两感测晶片端点的感测器的水平间距或垂直间距。Another way to calculate the distance between the sensors at the endpoints of two adjacent sensing wafers is to translate the signal waveforms sensed by the sensors at the endpoints of two adjacent sensing wafers until they overlap, and calculate the translation distance, In order to obtain the horizontal distance or the vertical distance between the sensors sensing the end points of two adjacent wafers.

附图说明Description of drawings

以下结合附图说明本发明的一优选实施例。附图中A preferred embodiment of the present invention will be described below with reference to the accompanying drawings. In the attached picture

图1显示一接触式影像感测器模组的示意图;FIG. 1 shows a schematic diagram of a contact image sensor module;

图2A代表本发明的一种测量影像感测晶片偏移的方法流程图;FIG. 2A represents a flow chart of a method for measuring the offset of an image sensing wafer according to the present invention;

图2B依据图2A提供的测量影像感测晶片偏移的系统的实施例的方块图;FIG. 2B is a block diagram of an embodiment of a system for measuring image sensor wafer deflection provided in FIG. 2A;

图3显示利用本发明的一实施例,以垂直测试图的方向进行扫描,取得位于单一感测晶片端点的感测器所感测的由亮度变化组成的信号波形;Fig. 3 shows the use of an embodiment of the present invention to scan in the direction perpendicular to the test pattern to obtain a signal waveform composed of brightness changes sensed by a sensor at the end of a single sensing chip;

图4显示利用本发明的一实施例,以垂直测试图的方向进行扫描,取得由未偏移相邻两感测晶片端点的感测器测得的由亮度变化组成的信号波形示意图;FIG. 4 shows a schematic diagram of a signal waveform composed of brightness changes measured by sensors that do not shift the endpoints of two adjacent sensing chips by scanning in a direction perpendicular to the test pattern using an embodiment of the present invention;

图5、6显示利用本发明的一实施例,以垂直测试图的方向进行扫描,取得由经偏移相邻两感测晶片端点的感测器感测的由亮度变化组成的信号波形示意图;5 and 6 show a schematic diagram of a signal waveform composed of luminance changes sensed by sensors that shift the endpoints of two adjacent sensing chips by scanning in a direction perpendicular to the test pattern using an embodiment of the present invention;

图7代表本发明的另一实施例中,由接触式影像感测器模组以垂直具有斜向条纹的测试图的方向,进行扫描的示意图;7 represents another embodiment of the present invention, a schematic diagram of scanning by the contact image sensor module in the direction perpendicular to the test pattern with diagonal stripes;

图8是依据图7的实施例,各感测器与具有斜向条纹的测试图于扫描过程中的相对位置图;FIG. 8 is a diagram showing the relative positions of each sensor and the test chart with oblique stripes during the scanning process according to the embodiment of FIG. 7;

图9A是依据图8的相对位置,取得各感测器感测的信号波形示意图;以及FIG. 9A is a schematic diagram of signal waveforms sensed by each sensor according to the relative positions of FIG. 8; and

图9B是依据图9A,平移感测器对应的信号波形直至重叠的示意图。FIG. 9B is a schematic diagram of signal waveforms corresponding to the translation sensor until overlapping according to FIG. 9A .

具体实施方式Detailed ways

请参阅图2A,其显示本发明的一种测量影像感测晶片偏移的方法,其包括下列步骤:Please refer to FIG. 2A , which shows a method for measuring image sensor chip displacement of the present invention, which includes the following steps:

首先,依据步骤S10,提供一接触式影像感测器模组,其包括多条排成一列的感测晶片,每一感测晶片配置在多个感测器。First, according to step S10 , a contact image sensor module is provided, which includes a plurality of sensing chips arranged in a row, and each sensing chip is configured on a plurality of sensors.

其次,依据步骤S20,提供一具有既定图案的测试图。Secondly, according to step S20, a test pattern with a predetermined pattern is provided.

接着,如步骤S30,使接触式影像感测器模组以一既定方向相对测试图移动,以进行扫描。Next, in step S30 , the contact image sensor module is moved relative to the test chart in a predetermined direction for scanning.

然后依据步骤S40,取得位于相邻两感测晶片端点的感测器所感测的信号波形。Then according to step S40, the signal waveforms sensed by the sensors located at the ends of two adjacent sensing chips are obtained.

依据步骤S50,计算相邻两感测晶片端点感测器的间距。According to step S50 , the distance between the endpoint sensors of two adjacent sensing chips is calculated.

请参阅图2B,其显示依据前述本发明方法的一实施例中,一种测量影像感测晶片偏移的系统。其包括一测试图30,具有一既定图案,例如图3的黑色条纹32、34、36和一白色条纹38,38b相间的区域。一接触式影像感测器模组20,主要包括多条排成一列的感测晶片,如图1的标号12、14、16所示,每一感测晶片则配置有多个感测器,包括位于相邻两感测晶片端点的感测器,如图4的P1、P2,至于接触式影像感测器模组20的解析度则依据厂商规格订定。一驱动装置50,例如步进马达(step motor),可选择一解析度高于接触式影像感测器模组20的步进刻度,以便进行测量。一控制系统40,例如使用具有影像处理和计算功能的微处理器,可用以控制驱动装置50来驱使接触式影像感测器模组20以一既定方向对测试图30进行扫描,取得位于相邻两感测晶片端点的感测器P1、P2所测得的信号波形,如图6所示,并藉此计算相邻两感测晶片端点的感测器的间距,例如垂直方向y的间距Δy(或水平方向的间距Δx)。其中间距的计算,是以感测器的中心点为计算基准。Please refer to FIG. 2B , which shows a system for measuring the deflection of an image sensor chip according to an embodiment of the aforementioned method of the present invention. It includes a test chart 30 with a predetermined pattern, such as black stripes 32 , 34 , 36 in FIG. 3 and a white stripe 38 , 38 b alternating with each other. A contact image sensor module 20 mainly includes a plurality of sensor chips arranged in a row, as shown by the reference numerals 12, 14, and 16 in FIG. 1, and each sensor chip is configured with a plurality of sensors, Including the sensors located at the endpoints of two adjacent sensing chips, such as P1 and P2 in FIG. 4 , the resolution of the contact image sensor module 20 is determined according to the manufacturer's specifications. A driving device 50, such as a step motor, can select a step scale with a resolution higher than that of the CIS module 20 for measurement. A control system 40, such as using a microprocessor with image processing and calculation functions, can be used to control the driving device 50 to drive the contact image sensor module 20 to scan the test pattern 30 in a predetermined direction, and obtain the image located adjacent to it. The signal waveforms measured by the two sensors P1 and P2 sensing the endpoints of the wafer are shown in Figure 6, and the distance between two adjacent sensors sensing the endpoints of the wafer is calculated, for example, the distance Δy in the vertical direction y (or the spacing Δx in the horizontal direction). The distance is calculated based on the center point of the sensor.

在图2B的实施例中,是利用驱动装置50驱动接触式影像感测器模组20以一既定方向对测试图30进行扫描。然而需要说明的是,在本发明的精神中,只要接触式影像感测器模组与测试图之间有相对移动即可。例如,也可利用驱动装置驱动测试图以一既定方向对接触式影像感测器模组移动,以进行扫描。In the embodiment of FIG. 2B , the driving device 50 is used to drive the contact image sensor module 20 to scan the test pattern 30 in a predetermined direction. However, it should be noted that, in the spirit of the present invention, as long as there is relative movement between the contact image sensor module and the test pattern. For example, the driving device can also be used to drive the test pattern to move in a predetermined direction to the contact image sensor module for scanning.

请参阅图3。本图以垂直测试图30的方向y为例,说明由接触式影像感测器模组20对测试图30的既定图案,如水平黑色条纹32、34、36和白色条纹38、38b相间的区域,以y方向进行扫描时,所取得位于感测晶片12端点的感测器P感测的信号波形Vp,其中横轴代表y方向距离,纵轴代表亮度变化。至于扫描方式可采用由接触式影像感测器模组20的面板10相对于测试图30以一既定方向移动,以进行扫描;也可以光线(如激光)合成的干涉条纹作为测试图30,以对影像感测器模组20的面板10进行扫描。当扫描到黑色条纹如32、34、36时,对应的信号波形为低亮度区,而当扫描到白色条纹38时,对应的信号波形为高亮度区,至于当感测器涵盖到部分黑色条纹如32、34和部分白色条纹38时,其对应的信号波形亮度为介于高亮度区和低亮度区之间。See Figure 3. This figure takes the vertical direction y of the test pattern 30 as an example to illustrate the predetermined pattern of the test pattern 30 by the contact image sensor module 20, such as the area where the horizontal black stripes 32, 34, 36 and white stripes 38, 38b alternate. , when scanning in the y direction, the signal waveform Vp sensed by the sensor P located at the end point of the sensing wafer 12 is obtained, wherein the horizontal axis represents the distance in the y direction, and the vertical axis represents the brightness change. As for the scanning method, the panel 10 of the contact image sensor module 20 can be moved in a predetermined direction relative to the test pattern 30 to scan; the interference fringes synthesized by light (such as laser) can also be used as the test pattern 30 to obtain the test pattern 30. The panel 10 of the image sensor module 20 is scanned. When black stripes such as 32, 34, and 36 are scanned, the corresponding signal waveform is a low-brightness area, and when white stripes 38 are scanned, the corresponding signal waveform is a high-brightness area. As for when the sensor covers part of the black stripes Such as 32, 34 and part of the white stripe 38, the brightness of the corresponding signal waveform is between the high brightness area and the low brightness area.

请参阅图4,对于面板10上的两相邻感测晶片12、14而言,假定位于相邻两感测晶片端点的感测器P1、P2于垂直方向y并无误差,则在进行扫描后,所取得位于相邻两感测晶片12、14端点的感测器P1、P2的信号波形Vp1,Vp2,由于P1、P2同时经过黑色条纹32、34和其间的白色条纹38,因此,信号波形Vp1、Vp2几乎重叠在一起。Please refer to FIG. 4, for two adjacent sensing chips 12, 14 on the panel 10, assuming that the sensors P1, P2 located at the endpoints of the adjacent two sensing chips have no error in the vertical direction y, then scanning Afterwards, the signal waveforms Vp1 and Vp2 of the sensors P1 and P2 located at the ends of the adjacent two sensing chips 12 and 14 are obtained. Since P1 and P2 pass through the black stripes 32 and 34 and the white stripes 38 therebetween at the same time, the signal waveforms The waveforms Vp1, Vp2 are almost overlapped.

然而,请参阅图5,当位于相邻两感测晶片12、14端点的感测器P1、P2于垂直方向y具有实质误差Δy时,则在进行扫描后,所取得位于相邻两感测晶片12、14端点的感测器P1、P2的信号波形Vp1、Vp2,由于是先后经过水平黑色条纹32、34和其间的白色条纹38。因此,信号波形Vp1、Vp2所对应的亮度区并未重叠而是彼此具有一既定间隔距离。However, referring to FIG. 5 , when the sensors P1 and P2 located at the endpoints of two adjacent sensing chips 12 and 14 have a substantial error Δy in the vertical direction y, then after scanning, the sensors P1 and P2 located at the two adjacent sensing chips are scanned. The signal waveforms Vp1 and Vp2 of the sensors P1 and P2 at the ends of the chips 12 and 14 pass through the horizontal black stripes 32 and 34 and the white stripes 38 therebetween. Therefore, the brightness regions corresponding to the signal waveforms Vp1 and Vp2 do not overlap but have a predetermined distance from each other.

请参阅图6,其为对应感测器P1、P2的信号波形Vp1、Vp2,由于其既定间隔距离即为感测器P1、P2于垂直方向y具有的实质误差Δy,因此计算此相邻两感测晶片12、14端点的感测器P1、P2的间距Δy的方式之一为,平移感测器P1对应的信号波形Vp1至P2对应的信号波形Vp2,或者平移感测器P2对应的信号波形Vp2至P1对应的信号波形Vp1,直至两者重叠为止,并计算其平移距离,以取得其垂直间距值Δy。同理,若将测试图30旋转90度,扫描方向改为水平方向x,并依据上述实施例进行测量,则可取得其水平间距值Δx。Please refer to Fig. 6, which are the signal waveforms Vp1 and Vp2 corresponding to the sensors P1 and P2. Since the predetermined separation distance is the actual error Δy of the sensors P1 and P2 in the vertical direction y, the calculation of the adjacent two One of the ways to sense the distance Δy between the sensors P1 and P2 at the endpoints of the wafers 12 and 14 is to use the signal waveform Vp1 corresponding to the translation sensor P1 to the signal waveform Vp2 corresponding to P2, or the signal corresponding to the translation sensor P2 Waveforms Vp2 to P1 correspond to the signal waveform Vp1 until the two overlap, and calculate the translation distance to obtain the vertical spacing value Δy. Similarly, if the test pattern 30 is rotated 90 degrees, the scanning direction is changed to the horizontal direction x, and the measurement is performed according to the above-mentioned embodiment, the horizontal distance value Δx can be obtained.

以下说明有关本发明测量影像感测晶片偏移的方法的另一实施例。Another embodiment of the method for measuring the offset of an image sensing wafer according to the present invention is described below.

请参阅图7,其以垂直方向y为例,并使接触式影像感测器模组20与测试图70呈一既定夹角θ,例如45度,来说明由接触式影像感测器模组20对测试图70的既定图案,如斜向黑色条纹72、74和白色条纹78相间的区域而以垂直y方向进行扫描时,所取得位于感测晶片12端点的相邻感测器P0、P1感测的信号波形Vp0、Vp1′,和位于感测晶片14端点的感测器P2的信号波形Vp2′。其中,扫描方式可采用由接触式影像感测器模组20的面板10对测试图70以一既定方向进行扫描,例如以斜向黑色条纹搭配垂直方向y的扫描方向,或以水平黑色条纹搭配与垂直方向y具有一斜角度θ的扫描方向;此外,也可以光线如激光合成的测试图70来对影像感测器模组20的面板10进行扫描。因此,当感测器扫描到黑色条纹如72、74时,对应的信号波形为低亮度区,而当感测器扫描到白色条纹78时,对应的信号波形为高亮度区,至于当感测器涵盖到部分黑色条纹如72、74和白色条纹78时,其对应的信号波形亮度为介于高亮度区和低亮度区之间。Please refer to FIG. 7 , which takes the vertical direction y as an example, and makes the contact image sensor module 20 and the test pattern 70 form a predetermined angle θ, for example, 45 degrees, to illustrate how the contact image sensor module 20. When scanning the predetermined pattern of the test chart 70 in the vertical y-direction, such as the area between the black stripes 72, 74 and the white stripes 78 obliquely, the adjacent sensors P0, P1 located at the end points of the sensing wafer 12 are obtained. The sensed signal waveforms Vp0 , Vp1 ′, and the signal waveform Vp2 ′ of the sensor P2 located at the end of the sensing wafer 14 . Among them, the scanning method can be to use the panel 10 of the contact image sensor module 20 to scan the test pattern 70 in a predetermined direction, for example, the scanning direction of the vertical direction y with oblique black stripes, or the horizontal black stripes. The scanning direction has an oblique angle θ with the vertical direction y; in addition, the panel 10 of the image sensor module 20 can also be scanned by the test pattern 70 synthesized by light such as laser light. Therefore, when the sensor scans black stripes such as 72 and 74, the corresponding signal waveform is a low-brightness area, and when the sensor scans a white stripe 78, the corresponding signal waveform is a high-brightness area. When the device covers some black stripes such as 72, 74 and white stripe 78, the brightness of the corresponding signal waveform is between the high-brightness area and the low-brightness area.

另请参阅图8及图9A,其显示在进行扫描时,感测器P0、P1、P2与斜向黑色条纹72、74和白色条纹78间的相对位置,以及感测器P0、P1、P2对应形成的信号波形Vp0′、Vp1′、Vp2′。其中当位于相邻两感测晶片12、14端点的感测器P1、P2于垂直方向y具有垂直间距Δy、于水平方向x具有水平间距Δx时,则在扫描过程中,所取得位于相邻两感测晶片12、14端点的感测器P0、P1、P2感测的信号波形Vp0′、Vp1′、Vp2′,将因先后经过黑色条纹72、74和其间的白色条纹78的顺序不同而未重叠在一起,例如若以白色条纹78为基准,最先扫描到白色条纹78者为感测器P2,其次为感测器P1,最后为感测器P0。因此,对应亮度变化Vout的信号波形Vp0′、Vp1′、Vp2′并未重叠而是彼此具有一既定间隔距离。Please also refer to FIG. 8 and FIG. 9A, which show the relative positions of the sensors P0, P1, P2 and the diagonal black stripes 72, 74 and white stripes 78 during scanning, and the relative positions of the sensors P0, P1, P2 Correspondingly formed signal waveforms Vp0', Vp1', Vp2'. Wherein when the sensors P1 and P2 located at the endpoints of two adjacent sensing chips 12 and 14 have a vertical distance Δy in the vertical direction y and a horizontal distance Δx in the horizontal direction x, then during the scanning process, the sensors located at the adjacent The signal waveforms Vp0', Vp1', Vp2' sensed by the sensors P0, P1, and P2 at the endpoints of the two sensing chips 12, 14 will be different due to the order of successively passing through the black stripes 72, 74 and the white stripes 78 therebetween. Not overlapping together, for example, if the white stripe 78 is used as a reference, the first to scan the white stripe 78 is the sensor P2 , the second is the sensor P1 , and the last is the sensor P0 . Therefore, the signal waveforms Vp0 ′, Vp1 ′, Vp2 ′ corresponding to the brightness change Vout do not overlap but have a predetermined distance from each other.

此外,在图8中,取三个相对位置Y1、Y2、Y3为例,而感测器P0-P1和P1-P2的水平间距分别为Δx0和Δx。另外定义接触式影像感测器模组内感测器P0与P1中心点连线为x轴方向,测试图70的斜纹与x轴呈一既定夹角θ。其次当感测器P2、P1、P0先后到达白色条纹78时,定义第一位置Y1与第二位置Y2的垂直距离为Δy′,第二位置Y2与第三位置Y3的垂直距离为Δy0,且定义第二位置Y2中感测晶片12的感测器P1的中心点,与第一位置Y1中感测晶片14的感测器P2的中心点间的垂直距离为Δy1。如此可得到下列公式:In addition, in FIG. 8, three relative positions Y1, Y2, and Y3 are taken as an example, and the horizontal distances of the sensors P0-P1 and P1-P2 are Δx 0 and Δx, respectively. In addition, the line connecting the center points of the sensors P0 and P1 in the contact image sensor module is defined as the direction of the x-axis, and the oblique lines of the test pattern 70 form a predetermined angle θ with the x-axis. Secondly, when the sensors P2, P1, and P0 successively reach the white stripe 78, define the vertical distance between the first position Y1 and the second position Y2 as Δy′, and the vertical distance between the second position Y2 and the third position Y3 as Δy 0 , And the vertical distance between the center point of the sensor P1 of the sensing chip 12 in the second position Y2 and the center point of the sensor P2 of the sensing chip 14 in the first position Y1 is defined as Δy 1 . This gives the following formula:

Δy0/Δx0=tanθ=Δy1/Δx-------(1)Δy 0 /Δx 0 =tanθ=Δy 1 /Δx-------(1)

Δy′=Δy1+Δy------------------(2)Δy'=Δy 1 +Δy------------------(2)

因此当夹角为45度时,第(1)式可改为:Therefore, when the included angle is 45 degrees, formula (1) can be changed to:

Δy0/Δx0=1=Δy1/Δx----------(3)Δy 0 /Δx 0 =1=Δy 1 /Δx----------(3)

回到图9A,由于对斜向黑色条纹如72与74间的白色条纹来说,感测器P2最先扫描到此区域而形成一高亮度区,其次是感测器P1,再其次才是感测器P0。因此可得到感测器P0、P1、P2的信号波形Vp0′、Vp1′、Vp2′,其中,相对于信号波形Vp0′-VP1′的间距为Δy0,而相对于信号波形Vp1′-Vp2′的间距为Δy1Returning to FIG. 9A, for the oblique black stripes such as the white stripes between 72 and 74, the sensor P2 scans this area first to form a high brightness area, followed by the sensor P1, and then the sensor P1. Sensor P0. Therefore, the signal waveforms Vp0', Vp1', Vp2' of the sensors P0, P1, P2 can be obtained, wherein the distance relative to the signal waveform Vp0'-VP1' is Δy 0 , and the distance between the signal waveform Vp1'-Vp2' The spacing is Δy 1 .

亦即,请参阅图9B,若平移信号波形Vp0′至Vp1′,直到重叠为止,则可计算其平移距离,以取得其间距值Δy0,同理,平移信号波形Vp1′至Vp2′直到至重叠为止,则可计算其平移距离,以取得其间距值Δy′。That is, referring to FIG. 9B, if the signal waveforms Vp0' to Vp1' are translated until they overlap, the translation distance can be calculated to obtain the distance value Δy 0 . Similarly, the signal waveforms Vp1' to Vp2' can be translated until they overlap. Until overlapping, the translation distance can be calculated to obtain the distance value Δy′.

因此,依据第(3)式,当夹角为45度时,可得:Therefore, according to formula (3), when the included angle is 45 degrees, it can be obtained:

Δx0=Δy0,Δx=Δy1--------(4)Δx 0 =Δy 0 , Δx=Δy 1 --------(4)

另依据第(2)式并配合第(4)式可得:In addition, according to formula (2) and formula (4), we can get:

Δx=Δy′-Δy-----------(5)Δx=Δy′-Δy-----------(5)

由于利用前述实施例,如图6所示,可得垂直间距值Δy,因此,藉由第(5)式可得到水平间距值Δx。如此,可使用水平及斜向两组黑白条纹,接触式影像感测器模组仅需扫描y轴方向,即可得出感测晶片间的偏移值Δx及Δy,因此可精简驱动机构的复杂度。Due to the aforementioned embodiment, as shown in FIG. 6 , the vertical distance value Δy can be obtained, therefore, the horizontal distance value Δx can be obtained by the formula (5). In this way, two sets of horizontal and oblique black and white stripes can be used, and the contact image sensor module only needs to scan the y-axis direction to obtain the offset values Δx and Δy between the sensing chips, so the drive mechanism can be simplified the complexity.

换言之,综合本实施例的测量影像感测晶片偏移的方法,包括下列步骤:In other words, the method for measuring the offset of the image sensor chip according to the present embodiment includes the following steps:

首先依据图1、5、6所示,其提供一接触式影像感测器模组20,包括多条排成一列的感测晶片12、14、16,每一感测晶片配置有多个感测器如P1、P2;接着提供一第一测试图30,其具有水平黑白相间条纹32、38、34;然后由接触式影像感测器模组20以一垂直方向y对第一测试图30进行扫描;取得位于相邻两感测晶片如12、14端点的感测器P1、P2感测的信号波形Vp1、Vp2;并依据信号波形Vp1、Vp2计算相邻两感测晶片端点的感测器的垂直间距Δy。First, as shown in FIGS. 1, 5, and 6, a contact image sensor module 20 is provided, including a plurality of sensing chips 12, 14, 16 arranged in a row, and each sensing chip is configured with a plurality of sensing chips. Then provide a first test pattern 30, which has horizontal black and white stripes 32, 38, 34; then the contact image sensor module 20 aligns the first test pattern 30 with a vertical direction y Carry out scanning; Obtain the signal waveforms Vp1, Vp2 sensed by the sensors P1, P2 located at the endpoints of two adjacent sensing chips such as 12, 14; and calculate the sensing of the endpoints of the adjacent two sensing chips according to the signal waveforms Vp1, Vp2 The vertical distance Δy of the device.

其次,依据图7至9所示,提供一第二测试图70,其具有斜向条纹72、74相间的测试区;由接触式影像感测器模组20以一垂直方向y对第二测试图70进行扫描,该垂直方向与斜向条纹72、74具有一倾斜角θ,如45度;取得位于相邻两感测晶片如12、14端点的至少三个感测器P0、P1、P2感测的信号波形Vp0′、Vp1′、Vp2′;并依据垂直间距Δy,这些至少三个感测器P0、P1、P2感测的信号波形Vp0′、Vp1′、Vp2′、及该倾斜角θ计算相邻两感测晶片端点的感测器P1、P2的水平间距Δx。Next, as shown in Figures 7 to 9, a second test pattern 70 is provided, which has test areas with diagonal stripes 72 and 74 alternately; 70 to scan, the vertical direction and oblique stripes 72, 74 have an inclination angle θ, such as 45 degrees; obtain at least three sensors P0, P1, P2 located at the endpoints of two adjacent sensing chips such as 12, 14 Sensed signal waveforms Vp0', Vp1', Vp2'; and according to the vertical spacing Δy, the signal waveforms Vp0', Vp1', Vp2' sensed by these at least three sensors P0, P1, P2, and the inclination angle θ calculates the horizontal distance Δx between the sensors P1 and P2 that sense the endpoints of two adjacent wafers.

因此依据本发明实施例所得出的间距值Δx、Δy即为相邻两感测晶片的水平和垂直偏移量值,故可取代传统的破坏性测量方法,并可透过修补软体对水平和垂直偏移量值进行补偿,以改善扫描后的影像。Therefore, the spacing values Δx and Δy obtained according to the embodiment of the present invention are the horizontal and vertical offset values of two adjacent sensing chips, so they can replace the traditional destructive measurement method, and the horizontal and vertical offset values can be corrected through the repair software. The vertical offset value is compensated to improve the scanned image.

虽然本发明已结合一优选实施例揭露如上,但是其并非用以限定本发明,本领域的技术人员在不脱离本发明的精神和范围内,可以作出各种更动与润饰,因此本发明的保护范围应当由后附的权利要求界定。Although the present invention has been disclosed above in conjunction with a preferred embodiment, it is not intended to limit the present invention. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection shall be defined by the appended claims.

Claims (22)

1. measure the system that image sensing wafer is offset for one kind, comprising:
One test pattern has a set pattern;
One contact-type image sensing device module, it has many sensing wafers that form a line, and this each sensing wafer disposes a plurality of sensors, comprises the sensor that is positioned at adjacent two sensing wafer end points;
One drive unit; And
One control system, in order to control this drive unit, this contact-type image sensing device module and this test pattern are produced in a set direction to relatively move, this contact-type image sensing device module will scan this test pattern, obtaining the sensor institute sensed signal waveform that is positioned at these adjacent two sensing wafer end points, and calculate the spacing of the sensor of these adjacent two sensing wafer end points.
2. the system as claimed in claim 1, wherein this drive unit is used for driving this contact-type image sensing device module, and this contact-type image sensing device module is moved relative to this test pattern with a set direction.
3. the system as claimed in claim 1, wherein this drive unit is used for driving this test pattern, and this test pattern is moved relative to this contact-type image sensing device module with a set direction.
4. as claim 1,2, one of 3 described systems, wherein this set direction is a vertical direction.
5. system as claimed in claim 4, wherein the spacing of the sensor of these adjacent two sensing wafer end points is a vertical interval.
6. as claim 1,2, one of 3 described systems, wherein this set direction is a horizontal direction.
7. system as claimed in claim 6, wherein the spacing of the sensor of these adjacent two sensing wafer end points is a level interval.
8. a method of measuring the image sensing wafer skew comprises the following steps:
One contact-type image sensing device module is provided, and it comprises many sensing wafers that form a line, and each sensing wafer disposes a plurality of sensors;
One test pattern with set pattern is provided;
This contact-type image sensing device module moves with respect to this test pattern with a set direction, and scans this test pattern;
Obtain the sensor sensed signal waveform that is positioned at adjacent two sensing wafer end points; And
Calculate the spacing of the sensor of these adjacent two sensing wafer end points.
9. method as claimed in claim 8 wherein when scanning, is moved with a set direction with respect to this test pattern by this contact-type image sensing device module, to scan.
10. method as claimed in claim 8 wherein when scanning, is moved with a set direction with respect to this contact-type image sensing device module by this test pattern, to scan.
11. method as claimed in claim 8, wherein when scanning, the test pattern synthetic by light comes this contact-type image sensing device module is scanned.
12. as claim 8,9,10, one of 11 described methods, wherein this set direction comprises the direction perpendicular to this test pattern.
13. as claim 8,9,10, one of 11 described methods, wherein this set direction comprises the direction of level in this test pattern.
14. as claim 8,9,10, one of 11 described methods, wherein the set pattern of this test pattern is chequered with black and white striped.
15. method as claimed in claim 14, wherein when those sensors scan blackstreak, corresponding signal waveform is the low-light level district, when those sensors scan white stripes, corresponding signal waveform is a high luminance area, when those sensors scanned part blackstreak and part white stripes, its corresponding signal waveform brightness was between this high luminance area and low-light level district.
16. method as claimed in claim 8, the spacing of wherein calculating the sensor of these adjacent two sensing wafer end points is, translation is positioned at the sensor institute sensed signal waveform of adjacent two sensing wafer end points, till overlapping, calculate its translation distance, with the spacing of the sensor of obtaining these adjacent two sensing wafer end points.
17. method as claimed in claim 8, wherein this set direction comprises the direction that makes this contact-type image sensing device module and this test pattern be a set angle.
18. method as claimed in claim 17, wherein this set direction comprises the direction that makes this contact-type image sensing device module and this test pattern be one 45 degree angles.
19. a method of measuring the image sensing wafer skew comprises the following steps:
One contact-type image sensing device module is provided, and it comprises many sensing wafers that form a line, and each sensing wafer disposes a plurality of sensors;
One first test pattern is provided, and it has the alternate test section of horizontal stripe;
This contact-type image sensing device module relatively moves to this first test pattern with a specific direction, to scan;
Obtain the sensor sensed signal waveform that is positioned at adjacent two sensing wafer end points;
Calculate the vertical interval of the sensor of these adjacent two sensing wafer end points according to those signal waveforms;
One second test pattern is provided, and it has the alternate test section of oblique striped;
This second test pattern is scanned with this specific direction by this contact-type image sensing device module, this specific direction has a pitch angle with this oblique striped;
Obtain at least three sensor sensed signal waveforms that are positioned at adjacent two sensor wafer end points; And
According to this vertical interval, those at least three sensor sensed signal waveforms, and the level interval of the sensor of these adjacent two sensing wafer end points of this tilt angle calculation.
20. method as claimed in claim 19, wherein this pitch angle is 45 degree.
21. method as claimed in claim 19, wherein this first test pattern and this second test pattern are by the synthetic test pattern of light.
22. method as claimed in claim 21, wherein this first test pattern and this second test pattern are made up of the interference fringe that laser produced.
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