CN112072251A - Terahertz waveguide-microstrip conversion device based on waveguide narrow-wall stepped microstrip probe - Google Patents
Terahertz waveguide-microstrip conversion device based on waveguide narrow-wall stepped microstrip probe Download PDFInfo
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- CN112072251A CN112072251A CN202010874219.XA CN202010874219A CN112072251A CN 112072251 A CN112072251 A CN 112072251A CN 202010874219 A CN202010874219 A CN 202010874219A CN 112072251 A CN112072251 A CN 112072251A
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- 238000010168 coupling process Methods 0.000 abstract description 28
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- 238000005859 coupling reaction Methods 0.000 abstract description 27
- 238000012545 processing Methods 0.000 abstract description 8
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
- H01P5/107—Hollow-waveguide/strip-line transitions
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Abstract
The invention discloses a terahertz waveguide-microstrip conversion device based on a waveguide narrow-wall stepped microstrip probe, which comprises a metal shell, wherein a waveguide cavity and a microstrip line shielding cavity are arranged in the metal shell, the microstrip line shielding cavity is positioned on the right side of the waveguide cavity, and the waveguide cavity is communicated with the microstrip line shielding cavity; the front end of the waveguide cavity is provided with a rectangular waveguide port, and the right end of the microstrip line shielding cavity is provided with a rectangular microstrip port; a microstrip probe assembly is arranged in the microstrip line shielding cavity and extends into the waveguide cavity. Aiming at the technical problems that complex structure processing is difficult to realize for millimeter waves and terahertz waves, a multi-channel system is difficult to assemble and the like, the invention provides a novel waveguide-microstrip conversion structure, realizes the energy conversion of waveguide and microstrip by coupling from the narrow side of the waveguide, and breaks through the limitation that probe coupling can only occur on the long side of the waveguide. The invention has the characteristics of low cost, easy realization, simple processing and convenient assembly.
Description
Technical Field
The invention relates to the field of terahertz waveguide-microstrip conversion structures, in particular to a terahertz waveguide-microstrip conversion device based on a waveguide narrow-wall stepped microstrip probe.
Background
Due to the fact that frequency is high, the wavelength is short, the requirement on machining accuracy is high, the millimeter wave and terahertz are different from a microwave low frequency band, and the millimeter wave and terahertz frequency band is suitable for being limited in transmission line form, antenna type, feeding mode, structure and the like. For millimeter wave and terahertz systems, the waveguide-microstrip circuit conversion structure is used as a key component for connecting the antenna array and the microwave circuit array, and the performance of the waveguide-microstrip circuit conversion structure plays a decisive factor.
The existing millimeter wave/terahertz system mostly adopts an array structure and has the characteristics of high integration level and small volume. For the transceiving front end, the high density integration of the multi-channel antenna and the circuit can limit the design space reserved for the antenna feed structure, and how to realize the effective transition from the antenna waveguide port to the microstrip transmission line in the limited space becomes a troublesome problem. The traditional waveguide microstrip converter adopts a mode of introducing a probe into a long waveguide edge, and completes the energy conversion from the waveguide to the microstrip line or in the reverse direction by utilizing the coupling of a suspension probe in the center of the long waveguide edge. The single feeding mode limits the integration development of the system, and when the distance between the long sides of the waveguides is small due to the fixed array arrangement, the introduction of the coupling probe into a narrow space is a great challenge for the assembly process and the structural design. The waveguide narrow-edge coupling can greatly reduce the structural complexity, but based on the waveguide theory, the traditional probe coupling method cannot complete the waveguide narrow-edge coupling, and the prior art still lacks an effective waveguide-microstrip converter.
Two typical microstrip-waveguide converters are shown in fig. 1-3, limited by the coupling of the coupling probe from the long side of the waveguide.
Fig. 1 shows a twisted waveguide-based (long-side coupled) waveguide-microstrip converter, four pyramidal horn antennas are arranged in parallel, and a microstrip probe is used for coupling between a rectangular waveguide and a microstrip circuit. Because the gaps between the waveguide ports of the antenna are very limited, the long sides of the waveguides are rotated to the vertical direction by adopting the twisted waveguides, so that the long sides of the four waveguide ports are sequentially arranged. The microstrip piece is inserted into the reflection cavity, and at the wavelength which is one quarter of the distance from the reflection backboard, the probe formed by printing the metal sheet realizes the coupling of energy between the waveguide and the microstrip line. The traditional long-edge coupling mode is adopted in the implementation mode, but a twisted waveguide structure needs to be added, the high-frequency-band twisted waveguide is difficult to process, and the complexity and the implementation difficulty of the structure are greatly increased.
Fig. 2 and 3 show a waveguide-microstrip converter based on a microstrip conversion circuit, which is similar to fig. 1, the antenna is four pyramidal horn antennas arranged in parallel, and the coupling between the waveguide and the microstrip line is realized by using a right-angle microstrip conversion circuit. The dielectric plate is embedded in the metal cavity, the two sides of the dielectric are respectively provided with a metal ground and a microstrip line, one end of the microstrip line extends out of the floor to be used as a metal probe, and the probe extends into the metal cavity at the tail end of the antenna. The coupling mode still utilizes the long-side coupling of the rectangular waveguide, and although the twisted waveguide which is difficult to process is not needed, a microstrip conversion circuit is introduced and needs to be installed in a narrow gap between antenna array units, which brings difficulty to actual processing. On one hand, in order to ensure the position accuracy of the microstrip switching circuit, the microstrip chip needs to be embedded in a metal cavity formed by the antenna array, so that the complexity of the cavity structure and the installation control difficulty are increased; on the other hand, multiple slots in the reflective cavity at the end of the antenna may introduce noise, thereby reducing the overall performance of the system.
Although the two technical schemes can complete energy conversion between the waveguide and the microstrip in the array type transceiving system, the structure is complex for a high frequency band, the existing processing technology is difficult to realize, and the system noise is difficult to control. In order to solve the series of problems, an ideal mode is to couple from a narrow side of a metal waveguide to realize energy coupling of the waveguide and the microstrip line. It can be understood from the basic waveguide theory that conventional probe coupling is obviously not feasible, and only new coupling modes can be searched.
The prior art has obvious disadvantages by adopting the ways of twisted waveguide and microstrip switching circuit. The twisted waveguide converts the long edges of the waveguides which are closely arranged to the vertical direction, the design space of the microstrip-waveguide converter is widened, and the coupling probe can be conveniently stretched from the long edges of the waveguides, but the twisted waveguide is quite difficult to process in millimeter wave and terahertz frequency bands, and is difficult to apply due to lack of support of process technology. The coupling probe extending from the long side of the waveguide is transited to the microstrip circuit by adopting the microstrip conversion circuit, and the energy conversion process is completed in a narrow gap, thereby providing double requirements for design and process. The installation of the microstrip conversion circuit needs to be accurately controlled, the installation mode and the precision control are difficult, new noise is possibly introduced by adding metal slots, and the system performance is reduced.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides the terahertz waveguide-microstrip conversion device based on the waveguide narrow-wall stepped microstrip probe, breaks through the limitation of coupling of the probe from the waveguide long edge, and has the advantages of excellent and stable performance, simple structure and easy processing and realization.
The invention adopts the following technical scheme:
the terahertz waveguide-microstrip conversion device based on the waveguide narrow-wall stepped microstrip probe comprises a metal shell, wherein a waveguide cavity and a microstrip line shielding cavity are arranged in the metal shell, the microstrip line shielding cavity is positioned on the right side of the waveguide cavity, and the waveguide cavity is communicated with the microstrip line shielding cavity; the front end of the waveguide cavity is provided with a rectangular waveguide port, and the right end of the microstrip line shielding cavity is provided with a rectangular microstrip port; a microstrip probe assembly is arranged in the microstrip line shielding cavity and extends into the waveguide cavity.
Preferably, the microstrip probe assembly comprises a dielectric substrate, a metal strip line board is arranged on the front end face of the dielectric substrate, a metal floor is arranged on the rear end face of the dielectric substrate, and the metal floor is fixedly connected to the rear end face of the microstrip line shielding cavity.
Preferably, the surface of the metal strip line board is printed with a probe structure, the probe structure comprises a microstrip feeder line positioned on the right side, the left end of the microstrip feeder line is connected with a multi-stage stepped probe, and the multi-stage stepped probe is connected to the top wall of the waveguide cavity.
Preferably, the multistage ladder-shaped probe comprises a connecting wire, the left end of the connecting wire is connected with a first-stage ladder probe and a second-stage ladder probe from bottom to top, and the left end of the second-stage ladder probe is bent upwards to form a short-circuit probe and is electrically connected to the top wall of the waveguide cavity.
Preferably, the right end faces of the dielectric substrate, the metal strip line plate and the metal floor are flush with each other and flush with the end face of the micro-strip port.
Preferably, the metal floor is shorter than the dielectric substrate and the metal strip plate, and the left end face of the metal floor is an arc-shaped face.
Preferably, the left end face of the metal floor is opposite to the connecting line of the multi-stage stepped probes.
The invention has the beneficial effects that:
aiming at the technical problems that complex structure processing is difficult to realize for millimeter waves and terahertz waves, a multi-channel system is difficult to assemble and the like, the invention provides a novel waveguide-microstrip converter, realizes the energy conversion of waveguide and microstrip by coupling from the narrow side of the waveguide, and breaks through the limitation that probe coupling can only occur on the long side of the waveguide.
Compared with the best prior art, the invention does not need a twisted waveguide structure which is difficult to process, and does not need to install a waveguide microstrip conversion circuit in a tiny gap, and has the characteristics of low cost, easy realization, simple processing and convenient assembly. In consideration of the limitation of the existing micromachining technology, the invention can effectively avoid the problems of difficult design, large noise and the like caused by a complex structure and has the characteristic of excellent and stable performance. The invention is suitable for the front end of a high-frequency-band multichannel transceiving system, and can effectively reduce the complexity of the system structure.
Drawings
Fig. 1 is a schematic diagram of a twisted waveguide based waveguide-microstrip transducer.
Fig. 2 is a perspective view of a waveguide-microstrip transition based on a microstrip transition circuit.
Fig. 3 is a cross-sectional view of a waveguide-microstrip transition based on a microstrip transition circuit.
Fig. 4 is an overall structure diagram of a terahertz waveguide-microstrip conversion device based on a waveguide narrow-wall stepped microstrip probe.
FIG. 5 is a schematic diagram of a microstrip probe assembly.
Fig. 6 is a cross-sectional view of a terahertz waveguide-microstrip conversion device based on a waveguide narrow-wall stepped microstrip probe.
Detailed Description
The following description of the embodiments of the present invention will be made with reference to the accompanying drawings:
with reference to fig. 4 to 6, the terahertz waveguide-microstrip conversion device based on the waveguide narrow-wall stepped microstrip probe includes a metal housing 1, and a waveguide cavity 2 and a microstrip line shielding cavity 3 are disposed in the metal housing.
As shown in fig. 4, the microstrip shielding cavity 3 is located on the right side of the waveguide cavity 2, and the waveguide cavity is communicated with the microstrip shielding cavity.
The front end of the waveguide cavity is provided with a rectangular waveguide port 4, and the right end of the microstrip line shielding cavity is provided with a rectangular microstrip port 5.
The waveguide port is a standard rectangular waveguide port, and can be connected with a waveguide transmission line.
The impedance of the microstrip port is standard 50 omega, and the microstrip port can be connected with the microstrip line.
A microstrip probe assembly is arranged in the microstrip line shielding cavity and extends into the waveguide cavity.
As shown in fig. 5, the microstrip probe assembly includes a dielectric substrate 6, a metal strip line plate 7 disposed on a front end surface of the dielectric substrate, a metal floor 8 disposed on a rear end surface of the dielectric substrate, and a right rear portion of the metal floor is fixedly connected to a rear end surface of the microstrip line shielding cavity.
The right end faces of the dielectric substrate, the metal strip line board and the metal floor are flush with each other and are flush with the end face of the micro-strip port.
The surface of the metal strip line board is printed with a probe structure, and the field in the waveguide transmission line is coupled into the microstrip line through the probe structure formed by the printed lines, or the reverse function is realized, and the field of the microstrip line is converted into the waveguide transmission line.
The width of the dielectric substrate is equal to that of the microstrip line shielding cavity, and the left side of the microstrip probe assembly extends into the waveguide cavity.
The metal floor is shorter than the medium substrate and the metal strip plate, and the left end surface of the metal floor is an arc-shaped surface 14.
As shown in fig. 6, the probe structure includes a microstrip feed line 9 located on the right side, the impedance of the microstrip feed line is 50 ohms, the left end of the microstrip feed line is connected with a multi-stage stepped probe, and the multi-stage stepped probe is connected to the top wall of the waveguide cavity.
The multistage ladder-shaped probe comprises a connecting wire 10, the left end of the connecting wire is connected with a first-stage ladder-shaped probe 11 and a second-stage ladder-shaped probe 12 from bottom to top, and the left end of the second-stage ladder-shaped probe is bent upwards to form a short-circuit probe 13 and is electrically connected to the top wall of the waveguide cavity.
The arc surface of the metal floor is over against the connecting line of the multistage ladder-shaped probes. The arc-shaped surface of the metal floor acts as an impedance transformer.
Vertical TE can be realized by adopting a multi-stage step-type probe10Conversion of the rectangular waveguide field of the mode to a microstrip line mode field in a direction orthogonal thereto. The short-circuit probe is positioned at the center of the waveguide cavity, the multistage step-shaped probe changes the energy transmission direction in a multi-resonance mode, and can guide the electromagnetic waves in the waveguide to a narrow side for output or realize the reverse process. The metal floor is shorter than the dielectric substrate and the metal strip line board, as can be seen from fig. 5 and 6, the microstrip feeder line 9 is opposite to the metal floor, most of the multi-stage step-shaped probes are opposite to no metal floor, the probe structure completes the coupling from the waveguide field to the microstrip line, the microstrip line realizes the transition to the microstrip circuit, the shape of the metal floor influences the matching degree of the two mode conversions, the metal floor structure can be well connected by optimizing the metal floor structure, and the matching performance is improved.
The invention provides a novel waveguide narrow-side coupling-based technology, adopts a novel waveguide-microstrip converter, realizes the purpose of completing waveguide-microstrip conversion by waveguide narrow-side coupling, can be used for a millimeter wave/terahertz multichannel receiving and transmitting system, and solves the technical problems of difficult processing of a complex structure, difficult assembly of a high-frequency circuit and the like.
The invention provides a novel micro-strip coupling probe structure of a multistage stepped short-circuit probe, which realizes multi-resonance through the multistage stepped probe and completes high-efficiency coupling from a waveguide field to a micro-strip field.
The probe structure can realize good matching of the broadband, and adopts a multi-stage ladder form or a similar form to obtain better bandwidth and matching performance without departing from the core design concept of the invention.
It is to be understood that the above description is not intended to limit the present invention, and the present invention is not limited to the above examples, and those skilled in the art may make modifications, alterations, additions or substitutions within the spirit and scope of the present invention.
Claims (7)
1. The terahertz waveguide-microstrip conversion device based on the waveguide narrow-wall stepped microstrip probe is characterized by comprising a metal shell, wherein a waveguide cavity and a microstrip line shielding cavity are arranged in the metal shell, the microstrip line shielding cavity is positioned on the right side of the waveguide cavity, and the waveguide cavity is communicated with the microstrip line shielding cavity; the front end of the waveguide cavity is provided with a rectangular waveguide port, and the right end of the microstrip line shielding cavity is provided with a rectangular microstrip port; a microstrip probe assembly is arranged in the microstrip line shielding cavity and extends into the waveguide cavity.
2. The terahertz waveguide-microstrip conversion device based on the waveguide narrow-wall stepped microstrip probe according to claim 1, wherein the microstrip probe assembly comprises a dielectric substrate, a metal strip line board is arranged on a front end face of the dielectric substrate, a metal floor is arranged on a rear end face of the dielectric substrate, and the metal floor is fixedly connected to a rear end face of the microstrip line shielding cavity.
3. The terahertz waveguide-microstrip conversion device based on the waveguide narrow-wall stepped microstrip probe as claimed in claim 2, wherein a probe structure is printed on the surface of the metal strip line board, the probe structure comprises a microstrip feed line positioned on the right side, a multistage stepped probe is connected to the left end of the microstrip feed line, and the multistage stepped probe is connected to the top wall of the waveguide cavity.
4. The terahertz waveguide-microstrip conversion device based on the waveguide narrow-wall stepped microstrip probe according to claim 3, wherein the multi-step stepped probe comprises a connecting line, a first-step probe and a second-step probe are connected to the left end of the connecting line from bottom to top, and the left end of the second-step probe is bent upwards to form a short-circuit probe and is electrically connected to the top wall of the waveguide cavity.
5. The terahertz waveguide-microstrip conversion device based on the waveguide narrow-wall stepped microstrip probe according to claim 2, wherein the right end faces of the dielectric substrate, the metal strip line board and the metal floor are flush with each other and flush with the end face of the microstrip port.
6. The terahertz waveguide-microstrip conversion device based on the waveguide narrow-wall stepped microstrip probe according to claim 2, wherein the metal floor is shorter than the dielectric substrate and the metal strip board, and the left end face of the metal floor is an arc-shaped face.
7. The terahertz waveguide-microstrip conversion device based on the waveguide narrow-wall stepped microstrip probe of claim 4, wherein the left end face of the metal floor is opposite to the connecting line of the multistage stepped probe.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010874219.XA CN112072251A (en) | 2020-08-27 | 2020-08-27 | Terahertz waveguide-microstrip conversion device based on waveguide narrow-wall stepped microstrip probe |
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| CN202010874219.XA CN112072251A (en) | 2020-08-27 | 2020-08-27 | Terahertz waveguide-microstrip conversion device based on waveguide narrow-wall stepped microstrip probe |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113078882A (en) * | 2021-03-31 | 2021-07-06 | 绵阳天赫微波科技有限公司 | 18-40GHz power amplifier module |
| CN113219222A (en) * | 2021-07-08 | 2021-08-06 | 航天科工通信技术研究院有限责任公司 | Radio frequency probe for micro-packaging application |
| CN115207587A (en) * | 2022-09-15 | 2022-10-18 | 四川太赫兹通信有限公司 | Terahertz radar system, front end and waveguide structure |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113078882A (en) * | 2021-03-31 | 2021-07-06 | 绵阳天赫微波科技有限公司 | 18-40GHz power amplifier module |
| CN113219222A (en) * | 2021-07-08 | 2021-08-06 | 航天科工通信技术研究院有限责任公司 | Radio frequency probe for micro-packaging application |
| CN113219222B (en) * | 2021-07-08 | 2021-09-03 | 航天科工通信技术研究院有限责任公司 | Radio frequency probe for micro-packaging application |
| CN115207587A (en) * | 2022-09-15 | 2022-10-18 | 四川太赫兹通信有限公司 | Terahertz radar system, front end and waveguide structure |
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