CN111999974A - High-temperature-resistant optical wavelength conversion device, preparation method and projection device - Google Patents

Abstract

The invention provides a high-temperature-resistant optical wavelength conversion device which comprises a substrate and a wavelength conversion layer. The invention also provides a preparation method of the optical wavelength conversion device, which is characterized in that the wavelength conversion layer is arranged on the substrate and comprises a wavelength conversion material and a bonding agent, the wavelength conversion material is fully mixed in the bonding agent, the wavelength conversion material comprises a plurality of fluorescent powder particles, the distance between two adjacent fluorescent powder particles in a laser irradiation area is not more than 2 times of the average diameter of the fluorescent powder particles, the preparation method of the optical wavelength conversion device is characterized in that the wavelength conversion material and the bonding agent are uniformly distributed in the wavelength conversion layer through pressing, free stacking and inorganic processes, and the distance between two adjacent fluorescent powder particles in the laser irradiation area is not more than 2 times of the average diameter of the material particles. The invention also provides a projection device. The high-temperature-resistant optical wavelength conversion device in the technical scheme has good high-temperature resistance and laser resistance. The projection device also has good temperature resistance and high power resistance due to the use of the projection device.

Description

High temperature resistant light wavelength conversion device, preparation method and projection device

technical field

The invention relates to the field of wavelength conversion devices, in particular to a high temperature resistant light wavelength conversion device, a preparation method and a projection device.

Background technique

The main principle of the laser wavelength conversion technology is that the excitation light is irradiated on the wavelength conversion material such as phosphor powder, and the excitation light produces laser light with a wavelength different from that of the excitation light. This technology is widely used in the fields of laser projection and laser illumination, and wavelength conversion devices are the key components to realize this technology. At present, the wavelength conversion layer used in the laser projection technology mainly includes a substrate and a wavelength conversion layer arranged on the substrate. The laser light source irradiates the wavelength conversion layer, and the phosphor in the wavelength conversion layer is excited to generate the received laser light. At the same time of receiving laser light, part of the energy of the laser light source will be converted into heat, causing the wavelength conversion layer to be heated. If this heat is not evacuated in time, it will cause problems such as aging and breakage of the wavelength conversion layer, reducing the light conversion of the wavelength conversion layer. efficiency and longevity.

As users' requirements for brightness and color of projectors and various lighting systems increase, the power of the laser light source is continuously increased. The wavelength conversion layer in the prior art is generally mixed with phosphors and colloids and then coated on the surface of the substrate. The surface of the wavelength conversion layer is generally a smooth glue leveling surface. The problems of this glue leveling surface are as follows: First, due to the uneven mixing of phosphors and colloids, the powder and glue distribution is uneven, and there are many local colloids. Phosphors are few and so on; the second is due to the sedimentation of the phosphors, and the phenomenon of layering of the phosphors and colloids occurs. The above two problems will cause the laser spot to hit the smooth colloidal leveling surface under the irradiation of the high-power laser light source, and the spot will be concentrated in the area with more phosphors, resulting in a sharp increase in the heat of this part, making this area. If the colloid near and near the area is too heated, the colloid will crack, and the phosphor will also be ablated and fail due to excessive heat, which will affect the light conversion efficiency of the phosphor and reduce the service life of the wavelength converter.

The current manufacturing process of the wavelength conversion layer is to mix the powder and glue and coat it on the substrate. In this process, simply increasing the phosphor powder ratio will reduce the conversion efficiency of the wavelength converter and increase the difficulty of the coating process. Therefore, how to provide a wavelength conversion device that can not only ensure high light conversion efficiency, but also withstand high-power lasers and avoid the occurrence of colloidal cracking of the wavelength conversion layer and the failure of phosphor burns is a hot spot and difficulty in the field of laser wavelength conversion research.

The "Background Art" paragraph in this application document is only used to help understand the content of the invention, so the content disclosed in the "Background Art" may contain some known technologies that do not constitute known technologies known to those skilled in the art. The disclosed content does not represent the content or the problem to be solved by one or more embodiments of the present invention, and has been known or recognized by those skilled in the art before the application of the present invention.

SUMMARY OF THE INVENTION

The purpose of the present invention is to provide a high temperature resistant light wavelength conversion device, which can improve the laser resistance and high temperature resistance of the device.

To achieve one or part or all of the above purposes or other purposes, a high temperature-resistant optical wavelength conversion device provided by an embodiment of the present invention includes a substrate and a wavelength conversion layer. The wavelength conversion layer is disposed on the substrate. The wavelength conversion layer includes a wavelength conversion material and an adhesive, and the wavelength conversion material is mixed in the adhesive. The wavelength conversion material includes a plurality of phosphor particles, and the surface of the wavelength conversion layer is partially or completely protruded from the surface of the wavelength conversion layer to form a rough surface, and the average of two adjacent phosphors in the laser irradiation area is formed. The distance between the particles does not exceed 2 times the average diameter of the phosphor particles. There is almost no glue on the surface of the wavelength conversion layer. The wavelength converter prepared by the traditional organic glue process can withstand a temperature of 250° C. for no more than 72 hours and a laser power of no more than 3W/mm ² . The wavelength conversion device prepared by the organic glue of the present invention can withstand Under the high temperature of 250℃ for more than 5000 hours, the laser power density is not less than 5W/mm ² ; the wavelength converter prepared by the conventional process of inorganic glue can withstand the temperature of 250℃ for less than 5 hours, and the laser power is not more than 5W/mm2. The wavelength conversion device prepared by the inorganic glue of the invention can withstand 250° C. for more than 5000 hours, and the withstand laser power density is not less than 6W/mm ² .

The adhesive is organic glue or inorganic glue. When the adhesive is selected from organic glue, the wavelength conversion material and the organic glue are fully mixed in a volume ratio of 0.6:1 to 10:1; when the adhesive is selected from inorganic glue, the The wavelength conversion material and the inorganic glue are thoroughly mixed in a volume ratio of 4:1 to 10:1.

The above-mentioned organic glue can be, for example, epoxy silica gel, methyl silica gel, phenyl silica gel or silica gel containing one or more of the above; the above-mentioned inorganic glue can be, for example, water-soluble inorganic glue or alcohol-soluble inorganic glue.

The wavelength conversion material is one or more of YAG, GaAG, LuAG and S/CASN nitride phosphors.

The substrate is a transmissive substrate or a reflective substrate.

In order to achieve one or part or all of the above purposes or other purposes, an embodiment of the present invention provides a method for preparing a high temperature light wavelength conversion device, comprising: mixing a wavelength conversion material with an organic glue, and a wavelength conversion material. The mixing volume ratio with organic glue is between 0.6:1 and 10:1; coating on the substrate to form a wavelength conversion layer; scraping off the surface glue layer of the wavelength conversion layer to make part or all of the wavelength conversion material particles protrude. The surface layer of the wavelength conversion layer forms a rough surface.

In order to achieve one or part or all of the above purposes or other purposes, an embodiment of the present invention provides a method for preparing a high temperature light wavelength conversion device, comprising: stacking wavelength conversion materials on a substrate; It is coated on the surface of the wavelength conversion material, and the glue penetrates into the wavelength conversion material to form a wavelength conversion layer, until the wavelength conversion material particles partially or completely protrude from the adhesive layer, and the mixing volume ratio of the wavelength conversion material and the organic glue is medium. Between 0.6:1 and 10:1.

In order to achieve one or part or all of the above purposes or other purposes, an embodiment of the present invention provides a method for preparing a high temperature light wavelength conversion device, comprising: fully mixing the wavelength conversion material and inorganic glue, coating A wavelength conversion layer is formed on the substrate, the mixing volume ratio of the wavelength conversion material and the inorganic glue is between 4:1 and 10:1, and the inorganic glue evaporates and shrinks to reduce the amount of the wavelength conversion material particles on the surface of the wavelength conversion layer. The amount of glue, so that part or all of the wavelength conversion material particles protrude from the surface layer of the wavelength conversion layer.

To achieve one or part or all of the above objectives or other objectives, an embodiment of the present invention provides a projection device including a laser light source unit and a fluorescent wheel. Wherein, the laser light source unit is used to emit a laser beam; the fluorescent wheel includes a wavelength conversion area, the wavelength conversion area is the high temperature light wavelength conversion device in the above embodiment, and the wavelength conversion area is used to convert the laser beam into Convert the beam.

In the high temperature-resistant optical wavelength conversion device according to the relevant embodiment of the present invention, by ensuring that the average distance between two adjacent fluorescent powder particles in the laser irradiation area is not more than 2 times the average particle size of the fluorescent powder particles, the optical wavelength conversion device can be The wavelength conversion material is distributed approximately uniformly and densely in the adhesive, thereby effectively improving the laser resistance and high temperature resistance of the wavelength conversion layer, and increasing the service life of the wavelength conversion layer. The embodiment of the present invention also provides a method for preparing the above-mentioned high-temperature-resistant optical wavelength conversion device. By improving the existing pressing process, a free-stacking or inorganic process method is provided to obtain the above-mentioned uniformly distributed and dense wavelength conversion layer, Improve the laser resistance and high temperature resistance of the optical wavelength conversion device. In addition, the present invention also provides a projection device including the above-mentioned high-temperature-resistant optical wavelength conversion device. Due to the dense distribution of the wavelength conversion material and the adhesive of the optical wavelength conversion device in the projection device, the laser beam spot transmitted by the wavelength conversion layer The size is reduced, and more laser light can be collected under the same light-receiving aperture, which can further improve the projection brightness of the projection device, and can be used in high-power laser projection devices to improve image brightness.

The above description is only an overview of the technical solution of the present invention. In order to understand the technical means of the present invention more clearly, and implement it according to the content of the description, the preferred embodiments of the present invention are described in detail below with the accompanying drawings.

Description of drawings

FIG. 1 is a schematic structural diagram of a high temperature-resistant optical wavelength conversion device according to a first embodiment of the present invention.

FIG. 2 shows a schematic microscopic plan view of the wavelength conversion layer in the first embodiment of the present invention.

FIG. 3 shows the colloidal ablation of the wavelength conversion layer in the first embodiment of the present invention and the wavelength conversion layer of the prior art under the same power laser irradiation.

FIG. 4 shows the colloidal cracking condition of the wavelength conversion layer in the first embodiment of the present invention and the wavelength conversion layer of the prior art under the same high temperature condition.

FIG. 5 shows a flow chart of a method for fabricating an optical wavelength conversion device according to a second embodiment of the present invention.

FIG. 6 shows a schematic plan view and a cross-sectional view of the wavelength conversion layer according to the second embodiment of the present invention.

FIG. 7 is a schematic diagram showing the distribution of phosphor particles in the laser irradiation area according to the second embodiment of the present invention.

FIG. 8 shows a flow chart of a method for manufacturing an optical wavelength conversion device according to a third embodiment of the present invention.

FIG. 9 shows a plan microscopic schematic view and a cross-sectional view of the wavelength conversion layer according to the third embodiment of the present invention.

FIG. 10 shows a flow chart of a method for fabricating an optical wavelength conversion device according to a fourth embodiment of the present invention.

FIG. 11 shows a schematic plan view and a cross-sectional view of the wavelength conversion layer according to the fourth embodiment of the present invention.

FIG. 12 is a schematic diagram of a projection apparatus according to a fifth embodiment of the present invention.

Reference numerals: 100-high temperature resistant light wavelength conversion device; 11a, 11b, 11c-wavelength conversion layer surface; 110-substrate; 12a, 12b, 12c-phosphor particles; 120-wavelength conversion layer; 13a, 13b, 13c: Colloid; 130-laser light source unit; 140-diffusion element; 150-first filter element; 160-light transmission module; 161-high reflector; 170-second filter element; 180-uniform light element; 190-filter Light color wheel; BR-blue light filter area; CB1-conversion beam; FW-fluorescence wheel; GL-green beam; GR-green filter area; L1-laser beam; Lz-laser path; RL-red beam; RR -Red light filter area.

Detailed ways

The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention. In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the accompanying drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the indicated device or element must have a specific orientation or a specific orientation. construction and operation, and therefore should not be construed as limiting the invention. Furthermore, the terms "first", "second", and "third" are used for descriptive purposes only and should not be construed to indicate or imply relative importance.

Referring to FIG. 1 , the high temperature-resistant optical wavelength conversion device 100 provided by the first embodiment of the present invention includes a substrate 110 and a wavelength conversion layer 120 . The wavelength conversion layer 120 is disposed on the substrate 110 and includes a wavelength conversion material and an adhesive, and the wavelength conversion material is fully mixed in the adhesive. The substrate 110 in this embodiment is a reflective substrate, but is not limited thereto. In other embodiments, the substrate 110 may also be a transmissive substrate. The wavelength conversion material is phosphor powder, which can be, for example, one or more phosphor powders of YAG, GaAG, LuAG and S/CASN nitride phosphor powder, which is not specifically limited in the present invention. In this embodiment, YAG phosphor powder is selected as the wavelength conversion powder. Material. The adhesive can be organic glue or inorganic glue, and the organic glue can be, for example, epoxy silica gel, methyl silica gel, phenyl silica gel or silica gel containing one or more of the above; the inorganic glue can be water-soluble, for example Inorganic glue or alcohol-soluble inorganic glue, inorganic glue has good high temperature resistance, generally can withstand high temperature up to 600-900 ℃. The components of the water-soluble inorganic glue are, for example, silicate, phosphate, sulfate or water glass. The components of the alcohol-soluble inorganic glue are, for example, metal oxides.

In the prior art, when silica gel is used as the adhesive, the volume ratio of phosphor powder and silica gel in the wavelength conversion layer is generally between 0.1:1 and 0.5:1; when inorganic glue is used as the adhesive, the phosphor powder The ratio of volume to inorganic glue is between 2:1 and 4:1. The powder glue in the wavelength conversion layer with this low ratio is unevenly distributed, and the thickness of the surface colloid is thick. Therefore, under the irradiation of high laser power, the wavelength of The conversion layer is severely ablated and cracked. Studies have shown that the high laser resistance and high temperature resistance of the wavelength conversion layer can be effectively improved by increasing the ratio of phosphor to silica gel or inorganic glue. In this embodiment, silica gel is used as the adhesive, and the volume ratio of the phosphor powder to the silica gel is 0.6:1. The plane microscopic schematic diagram of the wavelength conversion layer 120 is shown in FIG. 2 , because the volume of the phosphor powder and the silica gel is increased. Therefore, the compactness between the phosphor particles can be improved, so that part or all of the phosphor particles protrude from the surface layer of the wavelength conversion layer 120 . In this embodiment, the compactness of the phosphor and the uniformity of distribution in the silica gel are ensured by ensuring that the average distance between two adjacent phosphor particles in the laser irradiation area is not more than twice the average diameter of the phosphor particles.

Please refer to FIG. 3 and FIG. 4 , which illustrate the wavelength conversion layer 120 in which the phosphor powder and the silica gel are fully mixed in a volume ratio of 0.6:1 in this embodiment, and the phosphor powder and the silica gel in the prior art are mixed in a volume ratio of 0.3 : Structure diagram of the laser power resistance and high temperature resistance test of the wavelength conversion layer of the :1 hybrid. FIG. 3 shows the colloidal ablation of the wavelength conversion layer 120 of this embodiment and the wavelength conversion layer of the prior art under the same power laser irradiation. FIG. 3( a ) Figure 3(b) shows the colloidal ablation of the wavelength conversion layer in the prior art. It can be seen that under the irradiation of the same high-power laser, the colloidal ablation of the wavelength conversion layer 120 of this embodiment is obviously better. Colloidal ablation of the wavelength conversion layer in the prior art. FIG. 4 shows the colloidal cracking of the wavelength conversion layer 120 in this embodiment and the wavelength conversion layer in the prior art under the same high temperature condition, which is specifically at 250° C., FIG. 4( a ) is this embodiment Fig. 4(b) shows the colloidal ablation of the wavelength conversion layer 120 in the prior art. It can be seen that under the same high temperature condition, the colloidal ablation of the wavelength conversion layer 120 in this embodiment There are relatively few cracks, and the colloidal cracks of the wavelength conversion layer of the prior art are dense, and the crack resistance of the wavelength conversion layer 120 of this embodiment is obviously better than that of the wavelength conversion layer of the prior art.

The difference between the high temperature-resistant light wavelength conversion device provided by the second embodiment of the present invention and the first embodiment is that the phosphor particles 12a of the wavelength conversion layer in this embodiment and the silica gel are fully mixed according to the mixing volume ratio of 1:1 . This embodiment also provides a method for preparing the above-mentioned high-temperature-resistant optical wavelength conversion device, please refer to FIG. 5 , which includes fully mixing the phosphor particles 12a and the adhesive in this embodiment, for example, silica gel at a volume ratio of 1:1 After that, it is coated on the substrate to form a wavelength conversion layer, and then the silica gel on the surface layer of the wavelength conversion layer is scraped off with, for example, a blade. As shown in FIG. 6, FIG. 6a is a schematic plane microscopic view of the wavelength conversion layer in this embodiment, and FIG. 6b is a cross-sectional view of the wavelength conversion layer in this embodiment. Since the silica gel on the surface of the wavelength conversion layer is scraped off with a blade, scraping The volume ratio of the removed phosphor particles 12a to the silica gel is about 1.25:1, so that part or all of the phosphor particles 12a on the surface of the wavelength conversion layer protrude from the surface layer 11a of the wavelength conversion layer to form a rough surface, and are densely arranged at wavelengths On the surface of the conversion layer, the phosphor particles 12a are evenly distributed in the colloid 13a. As shown in Figure 7, the laser is irradiated on the wavelength conversion layer along the laser path Lz. In the wavelength conversion layer region on the laser path Lz, the average distance between two adjacent phosphor particles is not more than 2 times the phosphor powder. The average diameter of the particles. Compared with the current wavelength conversion layer that can withstand laser power not higher than 5W/mm ² , the wavelength conversion layer in this embodiment can withstand laser light with a light source power of 9.53W/mm ² , an increase of about 90.6% At the same time, the working time in a high temperature environment of 250°C can reach more than 5,000 hours, which is at least 68 times longer than that of the known wavelength conversion layer that is not more than 72 hours.

In this embodiment, the volume ratio of the phosphor particles 12a to the silica gel is higher than 0.6:1, which ensures that the average distance between two adjacent phosphor particles 12a in the laser irradiation area does not exceed twice the average of the phosphor particles 12a. If there is still a small amount of colloid 13a on the surface of the wavelength conversion layer, the ratio can continue to be increased. The experimental test results show that the optimal volume ratio of powder glue after scraping is 1.25:1.

Referring to FIG. 8 , the difference between the high temperature-resistant optical wavelength conversion device provided by the third embodiment of the present invention and the specific embodiment 2 is that this embodiment provides another preparation method for preparing the above-mentioned high-temperature optical wavelength conversion device, including: The wavelength conversion material is stacked on the substrate, and then the silica gel is coated on the surface of the wavelength conversion material, so that the glue penetrates into the wavelength conversion material to form a wavelength conversion layer, until part or all of the wavelength conversion material particles protrude from the adhesive layer, such as As shown in FIG. 9 , FIG. 9 a is a schematic plan view of the wavelength conversion layer in this embodiment, and FIG. 9 b is a cross-sectional view of the wavelength conversion layer in this embodiment. Part or all of the phosphor particles 12 b protrude from the surface layer 11 b of the wavelength conversion layer. , the phosphor particles 12b are evenly and densely distributed in the colloid 13b. In this embodiment, the mixing volume ratio of the phosphor particles 12b to the silica gel is higher than 0.6:1, which ensures that the average distance between two adjacent phosphor particles 12b in the laser irradiation area does not exceed twice the average diameter of the phosphor particles 12b , and, according to the principle of closest packing, the space utilization rate when the spheres are stacked in the closest packing arrangement is 74.05%. Considering that the phosphor particles 12b are different in size and not necessarily uniform spheres, the wavelength conversion of the free-stacking process is adopted. The space utilization rate in the layer can be higher than 74.05%, and the maximum ratio of powder glue is 10:1, and the higher the ratio, the denser the powder glue distribution, and the better the high temperature resistance of the wavelength conversion layer.

The fourth embodiment of the present invention provides another high-temperature-resistant light wavelength conversion device. The adhesive is inorganic glue. The inorganic glue can be, for example, a water-soluble inorganic glue or an alcohol-soluble inorganic glue. The phosphor particles 12c and the inorganic glue are The mixing volume ratio of the glue is 8:1. This embodiment also provides a method for preparing the above-mentioned high-temperature-resistant optical wavelength conversion device, please refer to FIG. 10 , which includes: the phosphor particles 12c and the adhesive in this embodiment are inorganic glue in a volume ratio of 8:1. Fully mixed, and then coated on the substrate to form a wavelength conversion layer. Through the volatile property of alcohol-soluble inorganic glue or the evaporation shrinkage property of water-soluble inorganic glue, the amount of glue between the phosphor particles 12c on the surface layer is reduced, so that part or all of the phosphor particles 12c are convex. The surface layer 11c of the wavelength conversion layer is shown in FIG. 11. FIG. 11a is a schematic plane microscopic view of the wavelength conversion layer in this embodiment, and FIG. 11b is a cross-sectional view of the wavelength conversion layer in this embodiment. The phosphor particles 12c are in the colloid 13c. The internal distribution is uniform and dense. The wavelength conversion layer made by this process can withstand a laser with a light source power of 11W/mm ² and can work continuously for more than 5000 hours in a high temperature environment of 250°C, compared with the current wavelength conversion layer. time, at least 68 times.

In this embodiment, the ratio of the phosphor particles 12c to the inorganic glue should be greater than 4:1. When the inorganic glue is cured, about 30% of the liquid is volatilized. According to the test results, the ratio of the phosphor particles 12c to the inorganic glue is the highest higher than 10:1.

As shown in Table 1 below, it shows the test results of the high laser resistance of the optical wavelength conversion devices in the above-mentioned second to fourth embodiments and the optical wavelength conversion devices of the prior art under the same conditions. The test data show that the optical wavelength conversion device of the prior art can withstand a laser light source power of not more than 4.6W/mm ² , while the optical wavelength conversion device prepared by pressing, free stacking or inorganic processes can withstand laser light. The powers of the light sources are all greater than 5W/mm ² , which is significantly improved compared with the prior art, and further, the light conversion efficiency of the light wavelength conversion device is effectively improved.

Table I

As shown in Table 2 below, it shows the test results of the high temperature resistance of the optical wavelength conversion device in the above-mentioned second to fourth embodiments and the optical wavelength conversion device of the prior art under the same conditions. The experimental data show that under the high temperature condition of 250℃, the optical wavelength conversion device of the prior art can work continuously for less than 72 hours, while the optical wavelength conversion device prepared by pressing, free stacking or inorganic process can work continuously for a long time. Both are more than 5,000 hours, and the working time has increased by at least 6,800% year-on-year, which significantly increases the service life of the optical wavelength conversion device.

Table II

At the same time, the brightness of the wavelength conversion layer with different ratios of powder and glue was tested. The test results are shown in Table 3 below. The high ratio of fluorescent powder silica gel has higher brightness. Due to the dense surface layer of the high-ratio phosphor silica body, the size of the transmitted laser beam spot is reduced. Under the same light-receiving aperture, the high-ratio phosphor powder silica body can collect more laser light, thereby improving the brightness. At the same time, the excitation light and the received laser light have no transmissive layer of surface colloid, thereby reducing the loss of brightness.

Table 3

FIG. 12 is a schematic diagram of a projection apparatus according to a fifth embodiment of the present invention. Referring to FIG. 12 , in this embodiment, the projection device includes a laser light source unit 130 , a diffusing element 140 , a first filter element 150 , a fluorescent wheel FW, a light transmission module 160 , a second filter element 170 and a light homogenizing element 180 . The laser light source unit 130 is used to emit the laser beam L1. The diffusing element 140 is on the transmission path of the laser beam L1 to convert the laser beam L1 into a uniform surface light source. The first filter element 150 is disposed on the transmission path of the laser beam L1 and the converted beam CB1 , so as to transmit the beam of a specific wavelength range and reflect other beams. The fluorescent wheel FW is located between the first filter element 150 and the light transfer module 160 . The light transmission module 160 includes a plurality of high-reflection mirrors 161 and a diffusing element 140, and is disposed on the transmission path of the laser beam L1 to guide the laser beam L1 to the first filter element 150 and transmit it, and the second filter element 150. The optical element 170 is located on the propagation paths of the laser beam L1 and the converted beam CB1 , and is used to filter out the beams in a specific wavelength range and pass the beams in the specific wavelength range. The homogenizing element 180 is located on the transmission path of the laser beam L1 and the converted beam CB1 to homogenize the beam.

In this embodiment, the laser light source unit 130 may be, for example, a blue laser light source. The first filter element 150 can be, for example, a dichroic filter and can transmit blue light and reflect other light. The fluorescent wheel FW includes a wavelength conversion area and a light transmission area, the wavelength conversion area is provided with a diffuse reflection layer for converting the laser light beam L1 into a converted light beam CB1 and reflecting the converted light beam CB1 to the first filter element 150, the The light-transmitting region is used to transmit part of the laser beam L1 to the light transmission module 160, and the wavelength-converting region can be made by any one of the above-mentioned preparation methods in the second to fourth embodiments. The wavelength-converting material in the wavelength-converting region is, for example, The red and green phosphors are uniformly mixed and distributed in the wavelength conversion region. The high reflection mirror 161 is, for example, a blue high reflection mirror. The second filter element 170 is, for example, a filter color wheel 190 .

Referring to FIG. 12 again, the specific working process of the projection device of this embodiment is that, in the first time interval, after the laser light source unit 130 emits a laser beam L1 (eg, blue light), the laser beam L1 sequentially passes through the diffusing element 140 and the first filter element 150 are irradiated on the fluorescent wheel FW. At this time, the fluorescent wheel FW cuts into the light-transmitting area, and the laser beam L1 penetrates the fluorescent wheel FW and is guided by the light transmission module 160 to the first filter element 150. It is then transmitted to the filter color wheel 190. At this time, the blue light filter area BR of the filter color wheel 190 cuts into the transmission path of the laser beam L1, so as to allow the laser beam L1 to penetrate and transmit it to the uniform light element 180. The uniform light element 180 The transmitted laser beam L1 is homogenized.

In the second time interval, after the laser light source unit 130 emits the laser beam L1 (eg, blue light), the laser beam L1 passes through the diffusing element 140 and the first filter element 150 in sequence, and irradiates the fluorescent wheel FW. , the fluorescent wheel FW cuts into the wavelength conversion area, and the laser beam L1 forms a converted beam CB1 by exciting the phosphor in the wavelength conversion area, and reflects the converted beam CB1 to the first filter element 150. The first filter element 150 converts the converted beam CB1 It is reflected to the filter color wheel 190. At this time, the green light filter area GR of the filter color wheel 190 cuts into the transmission path of the converted light beam CB1, so as to allow the green light part of the converted light beam CB1 to penetrate to form a green light beam GL and transmit it. To the uniform light element 180, the uniform light element 180 performs uniform light on the transmitted green light beam GL.

In the third time interval, after the laser light source unit 130 emits the laser beam L1 (eg, blue light), the laser beam L1 passes through the diffusing element 140 and the first filter element 150 in sequence, and irradiates the fluorescent wheel FW. , the fluorescent wheel FW cuts into the wavelength conversion area, and the laser beam L1 forms a converted beam CB1 by exciting the phosphors in the wavelength conversion area, and reflects it to the first filter element 150. The first filter element 150 reflects the converted beam CB1 to The filter color wheel 190, at this time, the red light filter area RR of the filter color wheel 190 is cut into the transmission path of the converted light beam CB1, so that the red light part in the converted light beam CB1 is penetrated to form a red light beam RL and transmitted to the uniform beam. The light element 180, the uniform light element 180 performs uniform light on the transmitted red light beam RL.

In this embodiment, the wavelength conversion region in the fluorescent wheel FW can be made by any of the processes in the second to fourth embodiments. Due to the dense distribution of phosphors in the wavelength conversion region, the spot size of the converted light beam CB1 is reduced, which can effectively increase the Converts the brightness of the beam to improve the brightness of the projected image. In addition, there is no colloid on the surface of the wavelength conversion area. Compared with the known wavelength conversion element, the brightness loss of the laser beam L1 can be improved due to passing through the surface glue layer when the laser beam L1 is incident, thereby improving the reduction of image brightness.

To sum up, the embodiments of the present invention have at least one of the following advantages or effects. In the high temperature-resistant light wavelength conversion device of the present invention, the internal structure of the wavelength conversion layer is changed by pressing or free accumulation or inorganic technology, so that the overall distribution of the wavelength conversion material and the adhesive is uniform and dense, thereby effectively improving the wavelength conversion layer. Anti-laser ability and high temperature resistance, increase the service life of the optical wavelength conversion device. In the projection device of the present invention, since the above-mentioned high-temperature-resistant light wavelength conversion device is provided, the brightness of the laser beam is effectively improved, and the projection brightness of the projection device can be further improved.

The technical features of the above-described embodiments can be combined arbitrarily. For the sake of brevity, all possible combinations of the technical features in the above-described embodiments are not described. However, as long as there is no contradiction between the combinations of these technical features, All should be regarded as the scope described in this specification.

The above-mentioned embodiments only represent several embodiments of the present invention, and the descriptions thereof are specific and detailed, but should not be construed as a limitation on the scope of the invention patent. It should be noted that, for those skilled in the art, without departing from the concept of the present invention, several modifications and improvements can be made, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention should be subject to the appended claims.

Claims (13)

1. A high temperature resistant optical wavelength conversion device includes a substrate and a wavelength conversion layer disposed on the substrate; it is characterized in that the preparation method is characterized in that,

the wavelength conversion layer comprises a wavelength conversion material and an adhesive, the wavelength conversion material is fully mixed in the adhesive, the wavelength conversion material comprises a plurality of fluorescent powder particles, part or all of the fluorescent powder particles protrude out of the surface layer of the wavelength conversion layer to form a rough surface, and the distance between two adjacent fluorescent powder particles in a laser irradiation area is not more than 2 times of the average diameter of the fluorescent powder particles.

2. The refractory light wavelength conversion device of claim 1, wherein the adhesive is an organic glue or an inorganic glue.

3. The refractory light wavelength conversion device of claim 2, wherein the wavelength conversion material and the organic glue are mixed in a volume ratio of 0.6: mixing well between 1 and 10: 1.

4. The refractory light wavelength conversion device of claim 2, wherein the wavelength conversion material and the inorganic glue are mixed in a volume ratio of 4: mixing well between 1 and 10: 1.

5. The device of claim 3, wherein the organic gel is an epoxy silica gel, a methyl silica gel, a phenyl silica gel, or a silica gel containing one or more of the foregoing.

6. The device of claim 4, wherein the inorganic glue is a water-soluble inorganic glue or an alcohol-soluble inorganic glue.

7. The refractory light wavelength conversion device of claim 1, wherein the wavelength conversion material is one or more of YAG, GaAG, LuAG, and S/CASN nitride phosphor.

8. The refractory light wavelength conversion device of claim 1, wherein the substrate is a transmissive substrate or a reflective substrate.

9. A preparation method of a high-temperature-resistant optical wavelength conversion device is characterized by comprising the following steps: comprises that

Mixing the wavelength conversion material and the organic glue according to the volume ratio of 0.6:1 to 10: 1;

coating the substrate with the wavelength conversion layer;

and scraping the adhesive layer on the surface layer of the wavelength conversion layer to enable the wavelength conversion material to partially or completely protrude out of the surface layer of the wavelength conversion layer.

10. The method of claim 9, wherein the adhesive is silica gel, the wavelength conversion material and the silica gel are fully mixed in a mixing volume of 1:1, and a volume ratio of the wavelength conversion material to the silica gel after scraping is 1.25: 1.

11. A preparation method of a high-temperature-resistant optical wavelength conversion device is characterized by comprising the following steps: comprises that

Depositing a wavelength converting material on a substrate;

coating organic glue on the surface of the wavelength conversion material, and enabling the organic glue to penetrate into the wavelength conversion material to form a wavelength conversion layer until the wavelength conversion material particles partially or completely protrude out of the bonding layer, wherein the volume ratio of the wavelength conversion material to the organic glue is 0.6:1 to 10: 1.

12. A method for preparing a high-temperature resistant optical wavelength conversion device is characterized by comprising

Fully mixing the wavelength conversion material and the inorganic adhesive according to the volume ratio of 4:1 to 10:1,

coating the substrate with the wavelength conversion layer;

and the inorganic glue is evaporated and shrunk to reduce the glue amount among the wavelength conversion material particles on the surface layer of the wavelength conversion layer, so that the wavelength conversion material particles partially or completely protrude out of the surface layer of the wavelength conversion layer.

13. A projection device is characterized by comprising a laser light source unit and a fluorescent wheel; wherein,

the laser light source unit is used for emitting laser beams;

the fluorescent wheel includes a wavelength conversion region, the wavelength conversion region being the refractory light wavelength conversion device of any one of claims 1-8, the wavelength conversion region being for converting a laser beam into a converted beam.

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