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CN111970915A - 一种防电磁辐射的超薄薄膜、装置、制备方法及应用 - Google Patents

一种防电磁辐射的超薄薄膜、装置、制备方法及应用 Download PDF

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CN111970915A
CN111970915A CN202010885668.4A CN202010885668A CN111970915A CN 111970915 A CN111970915 A CN 111970915A CN 202010885668 A CN202010885668 A CN 202010885668A CN 111970915 A CN111970915 A CN 111970915A
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electromagnetic radiation
ultra
dielectric layer
layer
radiation shielding
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路光
严发宝
苏艳蕊
陈耀
武昭
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Shandong University
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Abstract

本发明公开了一种防电磁辐射的超薄薄膜、装置、制备方法及应用，超薄薄膜，为叠层结构，依次设置第一介质层、第一金属层、第二介质层、第二金属层和第三介质层；介质层的材料为可见光波段透明的介质材料；第一介质层和第三介质层的厚度相同，且均小于第二介质层的厚度。该防电磁辐射的超薄薄膜在可见光波段透明度高，可见光波段透过率大于80％。利用金属和介质组成的交替膜层结构，利用光波在多层膜中的多重反射，实现在可见光波段的增强透射。可以实现1G‑40GHz的超宽带电磁屏蔽，屏蔽效果好，电磁屏蔽效果优于50dB。

Description

一种防电磁辐射的超薄薄膜、装置、制备方法及应用
技术领域
本发明属于防电磁辐射薄膜技术领域，具体涉及一种防电磁辐射的超薄薄膜、装置、制备方法及应用。
背景技术
公开该背景技术部分的信息仅仅旨在增加对本发明的总体背景的理解，而不必然被视为承认或以任何形式暗示该信息构成已经成为本领域一般技术人员所公知的现有技术。
随着现代无线通讯技术的不断发展，特别是5G技术的大规模投入使用，给人类带来了巨大的便利。新一代的通讯技术的发展趋势是将利用的电磁波频率逐渐向负载信息更大的更高频率推进，这让通讯设备的频率和功率越来越大，我们生活空间的电磁环境变得更加复杂，产生电磁污染。电磁污染已经成为危害人类健康的一大杀手。电磁辐射对人的视觉系统、机体免疫功能、心血管系统、内分泌系统、生殖系统和遗传中枢神经系统等都有不同程度的影响，特别是高频波和较强的电磁场作用于人体，容易产生白内障、白血病、脑肿瘤、心血管疾病、大脑机能障碍以及妇女流产和不孕等，甚至引起癌症等病变。一些特殊的应用环境和设备，要求材料具有良好的电磁屏蔽特性的同时，也需要在可见光区段具有较高的透过性，如微波暗室和电磁兼容室的观察窗，保密室防护玻璃等。所以，随着人类应用电磁波的频率的提高和电磁屏蔽应用场景的丰富，对现有透明电磁防护材料体系在防护带宽、工作波段、可见光透过率和电磁屏蔽效能等方面提出了更高要求和更大挑战。
现有的透明防辐射膜多为附加金属网的复合结构和多种化合物混合的复合材料。这两种透明防辐射膜均无法实现超宽带电磁屏蔽，可见光波段透过率较低，结构和制作工艺复杂。
发明内容
针对现有技术中存在的技术问题，本发明提供一种防电磁辐射的超薄薄膜、装置、制备方法及应用。
为解决以上技术问题，本发明的以下一个或多个实施例提供了如下技术方案：
第一方面，本发明提供一种防电磁辐射的超薄薄膜，为叠层结构，依次设置第一介质层、第一金属层、第二介质层、第二金属层和第三介质层；
介质层的材料为可见光波段透明的介质材料；
第一介质层和第三介质层的厚度相同，且均小于第二介质层的厚度。
第二方面，本发明提供一种防电磁辐射装置，包括基体和附着于基体上的所述超薄薄膜。
第三方面，本发明提供了上述防电磁辐射的超薄薄膜的制备方法，包括如下步骤：
采用电子束蒸发镀膜技术或磁控溅射技术制备。
第四方面，本发明提供上述防电磁辐射的超薄薄膜在微波暗室、电磁兼容室的观察窗中的应用，或在保密室防护玻璃中的应用。
与现有技术相比，本发明的以上一个或多个技术方案取得了以下有益效果：
该防电磁辐射的超薄薄膜在可见光波段透明度高，可见光波段透过率大于80％。利用金属和介质组成的交替膜层结构，利用光波在多层膜中的多重反射，实现在可见光波段的增强透射。
该防电磁辐射的超薄薄膜实现了超宽频段微波屏蔽：可以实现1G-40GHz的超宽带电磁屏蔽。金属层在微波段的具有良好的反射特性，利用两层金属层和多层膜的共振作用，实现在超宽微波段的极高反射。屏蔽效果好，电磁屏蔽效果优于50dB。
该防电磁辐射的超薄薄膜仅由5层膜组成，结构简单，便于加工。
附图说明
构成本发明的一部分的说明书附图用来提供对本发明的进一步理解，本发明的示意性实施例及其说明用于解释本发明，并不构成对本发明的不当限定。
图1是本发明实施例的防电磁辐射的超薄透明薄膜的结构示意图；
图2是本发明实施例的防电磁辐射的超薄透明薄膜在可见光波段的透过率谱；
图3是本发明实施例的防电磁辐射的超薄透明薄膜在微波段的透过率谱。
其中，1、第一介质层，2、第一金属层，3、第二介质层，4、第二金属层，5、第三介质层。
具体实施方式
应该指出，以下详细说明都是示例性的，旨在对本发明提供进一步的说明。除非另有指明，本文使用的所有技术和科学术语具有与本发明所属技术领域的普通技术人员通常理解的相同含义。
需要注意的是，这里所使用的术语仅是为了描述具体实施方式，而非意图限制根据本发明的示例性实施方式。如在这里所使用的，除非上下文另外明确指出，否则单数形式也意图包括复数形式，此外，还应当理解的是，当在本说明书中使用术语“包含”和/或“包括”时，其指明存在特征、步骤、操作、器件、组件和/或它们的组合。
第一方面，本发明提供一种防电磁辐射的超薄薄膜，为叠层结构，依次设置第一介质层、第一金属层、第二介质层、第二金属层和第三介质层；
介质层的材料为可见光波段透明的介质材料；
第一介质层和第三介质层的厚度相同，且均小于第二介质层的厚度。
在一些实施例中，第一介质层和第三介质层的厚度为20-60nm。
在一些实施例中，第二介质层的厚度为60-200nm。
在一些实施例中，第一金属层和第二金属层的厚度为8-15nm。
在一些实施例中，可见光波段透明的介质材料为氧化硅、氧化钛、氧化铝、ITO或GZO。
ITO为N型氧化物半导体-氧化铟锡。
GZO为Ga掺杂ZnO材料。
在一些实施例中，金属层的材料为金、银、铜或铝。
第二方面，本发明提供一种防电磁辐射装置，包括基体和附着于基体上的所述超薄薄膜。
在一些实施例中，所述基体为玻璃或塑料。
进一步的，所述基体为板体结构。
第三方面，本发明提供了上述防电磁辐射的超薄薄膜的制备方法，包括如下步骤：
采用电子束蒸发镀膜技术或磁控溅射技术制备。
第四方面，本发明提供上述防电磁辐射的超薄薄膜在微波暗室、电磁兼容室的观察窗中的应用，或在保密室防护玻璃中的应用。
实施例1
利用氧化钛和金属银制备一种在可见光波段具有高透过率，在微波波段具有高屏蔽特性的超薄薄膜。
如图1所示，该超薄薄膜的第一介质层为40nm的氧化钛层，第一金属层为12nm的银层，第二介质层为80nm的氧化钛层，第二金属层为12nm的银层，第三介质层为40nm的氧化钛层。
超薄薄膜采用电子束蒸发工艺整体制备在折射率为1.52的玻璃衬底上。
图2为该超薄薄膜在可见光波段的透过谱，在可见光范围(380-780nm)的波长范围内，透过率都超过了80％。
图3为该超薄薄膜在微波段的透过谱，在1-40GHz超宽频带的范围内，超薄薄膜的电磁屏蔽效果都优于50dB。
实施例2
利用氧化硅和金属银制备一种在可见光波段具有高透过率，在微波波段具有高屏蔽特性的超薄薄膜。
该超薄薄膜的第一介质层为50nm的氧化硅层，第一金属层为15nm的金层，第二介质层为100nm的氧化硅层，第二金属层为15nm的金层，第三介质层为50nm的氧化硅层。
实施例3
利用氧化铝和金属铜制备一种在可见光波段具有高透过率，在微波波段具有高屏蔽特性的超薄薄膜。
该超薄薄膜的第一介质层为60nm的氧化铝层，第一金属层为8nm的铜层，第二介质层为100nm的氧化铝层，第二金属层为8nm的铜层，第三介质层为60nm的氧化铝层。
对比例1
与实施例1的区别在于：省略第一介质层，其他结构及制备方法均与实施例1相同。
制备的超薄薄膜在可见光范围内，透过率小于60％，在1-40GHz超宽频带的范围内，超薄薄膜的电磁屏蔽效果为50dB。
对比例2
与实施例1的区别在于：省略第一金属层，其他结构及制备方法均与实施例1相同。
制备的超薄薄膜在可见光范围内，透过率小于60％，在1-40GHz超宽频带的范围内，超薄薄膜的电磁屏蔽效果为20dB。
对比例3
与实施例1的区别在于：第一介质层的厚度为10nm，其他结构及制备方法均与实施例1相同。
制备的超薄薄膜在可见光范围内，透过率为小于65％，在1-40GHz超宽频带的范围内，超薄薄膜的电磁屏蔽效果为50dB。
对比例4
与实施例1的区别在于：第二介质层的厚度为50nm，其他结构及制备方法均与实施例1相同。
制备的超薄薄膜在可见光范围内，透过率为小于65％，在1-40GHz超宽频带的范围内，超薄薄膜的电磁屏蔽效果为50dB。
以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (10)

1.一种防电磁辐射的超薄薄膜，其特征在于：为叠层结构，依次设置第一介质层、第一金属层、第二介质层、第二金属层和第三介质层；
介质层的材料为可见光波段透明的介质材料；
第一介质层和第三介质层的厚度相同，且均小于第二介质层的厚度。
2.根据权利要求1所述的防电磁辐射的超薄薄膜，其特征在于：第一介质层和第三介质层的厚度为20-60nm。
3.根据权利要求1所述的防电磁辐射的超薄薄膜，其特征在于：第二介质层的厚度为60-200nm。
4.根据权利要求1所述的防电磁辐射的超薄薄膜，其特征在于：第一金属层和第二金属层的厚度为8-15nm。
5.根据权利要求1所述的防电磁辐射的超薄薄膜，其特征在于：可见光波段透明的介质材料为氧化硅、氧化钛、氧化铝、ITO或GZO。
6.根据权利要求1所述的防电磁辐射的超薄薄膜，其特征在于：金属层的材料为金、银、铜或铝。
7.一种防电磁辐射装置，其特征在于：包括基体和附着于基体上的所述超薄薄膜。
8.根据权利要求7所述的防电磁辐射装置，其特征在于：所述基体为玻璃或塑料；
进一步的，所述基体为板体结构。
9.权利要求1-6所述防电磁辐射的超薄薄膜的制备方法，其特征在于：包括如下步骤：
采用电子束蒸发镀膜技术或磁控溅射技术制备。
10.权利要求1-6所述防电磁辐射的超薄薄膜在微波暗室、电磁兼容室的观察窗中的应用，或在保密室防护玻璃中的应用。
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