CN111969326A - Electric field regulation and control two-dimensional omnidirectional metal-medium composite stealth device and manufacturing method thereof - Google Patents
Electric field regulation and control two-dimensional omnidirectional metal-medium composite stealth device and manufacturing method thereof Download PDFInfo
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Abstract
本发明公开了一种电场调控二维全向金属‑介质复合隐身器件,包括隐身器件主体和电场调控系统,隐身器件主体包括第一电介质板、第二电介质板和环形金属十字阵列;第一电介质板和第二电介质板交替排列构成层状堆叠结构,层状堆叠结构为具有圆柱状空间的圆环柱状体;第一电介质板的两侧面上分别附着N层环形金属十字阵列,每层环形金属十字阵列包括多个长方体晶格单元;电场调控系统用于使隐身器件主体的频率特性曲线发生移动,实现对隐身器件工作频率的调谐。本发明实现对不同频段的电磁波的隐身,适用范围大、控制方便、结构简单合理、装配方便且结构稳定性高。本发明还公开了一种电场调控二维全向金属‑介质复合隐身器件的制作方法。
The invention discloses a two-dimensional omnidirectional metal-dielectric composite stealth device with electric field regulation, comprising a stealth device main body and an electric field regulation system. The plate and the second dielectric plate are alternately arranged to form a layered stacking structure, and the layered stacking structure is a circular cylindrical body with a cylindrical space; N layers of annular metal cross arrays are respectively attached to both sides of the first dielectric plate, and each layer of annular metal The cross array includes a plurality of cuboid lattice units; the electric field control system is used to move the frequency characteristic curve of the main body of the stealth device, so as to realize the tuning of the working frequency of the stealth device. The invention realizes the stealth of electromagnetic waves of different frequency bands, has a wide application range, convenient control, simple and reasonable structure, convenient assembly and high structural stability. The invention also discloses a method for manufacturing a two-dimensional omnidirectional metal-dielectric composite stealth device regulated by an electric field.
Description
技术领域technical field
本发明涉及电磁波控制技术领域,尤其是涉及一种电场调控二维全向金属-介质复合隐身器件及制作方法。The invention relates to the technical field of electromagnetic wave control, in particular to a two-dimensional omnidirectional metal-dielectric composite stealth device with electric field regulation and a manufacturing method.
背景技术Background technique
传统的隐身技术是利用吸波材料减少对雷达波的反射来实现隐身,但在面对地空雷达以及多基地雷达等更为先进的探测技术时,通常难以继续保持隐身效果。近年来逐渐兴起的基于变换光学的隐身技术为解决这一难题带来了希望。利用特定空间分布的各向异性电磁参数,变换光学隐身器件能够控制电磁波的传播路径,使其在隐身介质中传播时绕过隐身区域,并且在出射时回到原来的入射方向,使得空间中的电磁场分布与该区域内没有物体时无异,从而实现真正意义上的完美隐身。The traditional stealth technology uses absorbing materials to reduce the reflection of radar waves to achieve stealth, but it is usually difficult to maintain the stealth effect in the face of more advanced detection technologies such as ground-to-air radar and multistatic radar. The emerging stealth technology based on transformation optics in recent years brings hope to solve this problem. Using the anisotropic electromagnetic parameters of a specific spatial distribution, the transforming optical stealth device can control the propagation path of the electromagnetic wave, so that it bypasses the stealth area when it propagates in the stealth medium, and returns to the original incident direction when it exits, so that the The electromagnetic field distribution is the same as when there are no objects in the area, thus achieving perfect stealth in the true sense.
然而,基于变换光学的隐身器件需要非均匀及各向异性的复杂电磁参数,目前所实现的电磁波隐身器件一般采用相位近似的方法减小非均匀性,并通过规定入射波偏振方向的方式将隐身器件的工作范围从三维空间降至二维空间,以使非均匀及各向异性的电磁参数得到简化。尽管如此,简化后的参数仍然需要借助于人工构造的电磁超材料来实现。现有的超材料利用电磁谐振来实现特定的等效电磁参数,具有严重的色散特性,其结构一旦确定,工作频段也随之固定,工作频率难以调谐;超材料不同方向上电磁谐振间的耦合使得对等效各向异性电磁参数的精准调控较为困难,需要消耗大量的时间和计算资源来对结构进行优化设计;此外超材料往往需要借助于支撑框架或基板来实现电磁谐振单元的周期性空间分布,这容易引起装配误差并且降低了结构稳定性,限制了隐身器件的应用范围。However, stealth devices based on transformation optics require complex electromagnetic parameters that are non-uniform and anisotropic. Currently, the electromagnetic wave stealth devices implemented generally use a phase approximation method to reduce the non-uniformity, and specify the polarization direction of the incident wave. The operating range of the device is reduced from three-dimensional space to two-dimensional space, so that the non-uniform and anisotropic electromagnetic parameters are simplified. Nevertheless, the simplified parameters still need to be realized with the help of artificially constructed electromagnetic metamaterials. Existing metamaterials use electromagnetic resonance to achieve specific equivalent electromagnetic parameters, which have serious dispersion characteristics. Once the structure is determined, the operating frequency band is also fixed, and the operating frequency is difficult to tune; the coupling between electromagnetic resonances in different directions of metamaterials This makes it difficult to precisely control the equivalent anisotropic electromagnetic parameters, and it takes a lot of time and computing resources to optimize the design of the structure; in addition, metamaterials often need to rely on a support frame or substrate to realize the periodic space of the electromagnetic resonance unit. distribution, which easily causes assembly errors and reduces structural stability, limiting the application range of stealth devices.
发明内容SUMMARY OF THE INVENTION
本发明旨在至少解决现有技术中存在的技术问题之一。为此,本发明的一个目的在于提出一种电场调控二维全向金属-介质复合隐身器件,可以实现对不同频段的电磁波的隐身,适用范围大、控制方便、结构简单合理、装配方便且结构稳定性高。The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, an object of the present invention is to propose a two-dimensional omnidirectional metal-dielectric composite stealth device with electric field regulation, which can realize stealth to electromagnetic waves in different frequency bands, has a large application range, is convenient to control, has a simple and reasonable structure, is convenient to assemble and has a structure High stability.
根据本发明第一方面实施例的电场调控二维全向金属-介质复合隐身器件,包括:The electric field regulated two-dimensional omnidirectional metal-dielectric composite stealth device according to the embodiment of the first aspect of the present invention includes:
隐身器件主体,所述隐身器件主体包括第一电介质板、第二电介质板和环形金属十字阵列;其中,所述第一电介质板的介电常数高于所述第二电介质板的介电常数,所述第一电介质板和所述第二电介质板均为圆环柱状,所述第一电介质板和所述第二电介质板交替排列构成层状堆叠结构,所述层状堆叠结构为具有圆柱状空间的圆环柱状体;所述第一电介质板的两侧面上分别附着N层所述环形金属十字阵列,所述N为大于1的整数,每层所述环形金属十字阵列包括多个长方体晶格单元,其中,每个所述晶格单元内包含有两个对称分布于所述第一电介质板两侧面的金属十字,每层所述环形金属十字阵列的所述晶格单元和单元内的所述金属十字的几何尺寸相同,不同层所述环形金属十字阵列的所述晶格单元和单元内的所述金属十字的几何尺寸不同;a stealth device body, the stealth device body comprising a first dielectric plate, a second dielectric plate and an annular metal cross array; wherein the dielectric constant of the first dielectric plate is higher than that of the second dielectric plate, The first dielectric plate and the second dielectric plate are both circular and cylindrical, the first dielectric plate and the second dielectric plate are alternately arranged to form a layered stack structure, and the layered stack structure has a cylindrical shape A circular cylindrical body in space; N layers of the annular metal cross arrays are respectively attached to both sides of the first dielectric plate, where N is an integer greater than 1, and each layer of the annular metal cross array includes a plurality of cuboid crystals A lattice unit, wherein each of the lattice units includes two metal crosses symmetrically distributed on both sides of the first dielectric plate, and the lattice units of each layer of the annular metal cross array and the The geometric dimensions of the metal crosses are the same, and the lattice units of the annular metal cross arrays of different layers and the geometric dimensions of the metal crosses in the units are different;
电场调控系统,所述电场调控系统包括直流稳压电源、直流偏压线和直流电压控制器;其中,所述直流稳压电源用于对所述第一电介质板施加稳定的直流电压,以使所述第一电介质板处于稳定直流电场中;所述第一电介质板的两侧面上的所述环形金属十字阵列通过所述直流偏压线分别与所述直流稳压电源的正极和负极相连;所述直流电压控制器用于控制所述直流稳压电源的输出电压以调节施加于所述第一电介质板的所述直流电场,从而改变所述第一电介质板本身的介电常数,使所述隐身器件主体的频率特性曲线发生移动,实现对所述隐身器件工作频率的调谐。An electric field regulation system, the electric field regulation system includes a DC regulated power supply, a DC bias line and a DC voltage controller; wherein, the DC regulated power supply is used to apply a stable DC voltage to the first dielectric plate, so that the The first dielectric plate is in a stable DC electric field; the annular metal cross arrays on both sides of the first dielectric plate are respectively connected to the positive and negative electrodes of the DC regulated power supply through the DC bias line; The DC voltage controller is used to control the output voltage of the DC regulated power supply to adjust the DC electric field applied to the first dielectric plate, so as to change the dielectric constant of the first dielectric plate itself, so that the The frequency characteristic curve of the main body of the stealth device moves, so as to realize the tuning of the operating frequency of the stealth device.
根据本发明第一方面实施例的电场调控二维全向金属-介质复合隐身器件,第一电介质板和第二电介质板交替排列构成层状堆叠结构,第一电介质板的两侧面分别附着有环形金属十字阵列12,金属十字在交变磁场中会产生磁谐振,这样,通过金属十字的磁谐振可以实现沿金属十字的两条金属臂方向的等效各向异性磁导率,通过第一电介质板和第二电介质板的层状堆叠结构实现沿堆叠方向上的等效介电常数,当隐身器件在某一特定频段实现变换光学理论所要求的特定各向异性的等效介电常数和等效磁导率时,隐身器件可以控制电磁波传播路径与相位的要求,使得圆柱状空间内的障碍物能够对二维平面内包括平面波和柱面波在内的任意波形以及任意入射方向的电磁波实现隐身;通过直流电压控制器控制直流稳压电源的输出电压,调节第一电介质板两侧的直流电压,即调节第一电介质板所处的直流电场,从而改变第一电介质板的介电常数,改变金属十字的谐振特性,使得环形金属十字阵列12的等效磁导率色散曲线发生移动,可以对隐身器件的工作频率进行调谐,由此实现对不同频段的电磁波的隐身。此外,隐身器件采用层状堆叠结构而不需要额外的支撑框架或基板。综上,本发明第一方面实施例的电场调控二维全向金属-介质复合隐身器件可以实现对不同频段的电磁波的隐身,适用范围大、控制方便、结构简单合理、装配方便且结构稳定性高。According to the electric field control two-dimensional omnidirectional metal-dielectric composite stealth device according to the embodiment of the first aspect of the present invention, the first dielectric plate and the second dielectric plate are alternately arranged to form a layered stack structure, and two sides of the first dielectric plate are respectively attached with annular The
根据本发明第一方面的一个实施例,所述第一电介质板的介电常数随电场的变化而变化,并且所述第一电介质板的介电常数的数值大于50。According to an embodiment of the first aspect of the present invention, the dielectric constant of the first dielectric plate varies with the electric field, and the value of the dielectric constant of the first dielectric plate is greater than 50.
根据本发明第一方面进一步的实施例,所述第二电介质板的介电常数范围为0.8~2.0。According to a further embodiment of the first aspect of the present invention, the dielectric constant of the second dielectric plate ranges from 0.8 to 2.0.
根据本发明第一方面的一个实施例,所述隐身器件主体以zrθ柱坐标系为参考时,其中,z轴为所述隐身器主体的轴向方向,r轴为所述隐身器主体的径向方向,θ轴为所述隐身器主体的切向方向,所述环形金属十字阵列中的所述金属十字的两条金属臂分别平行于r轴方向和θ轴方向。According to an embodiment of the first aspect of the present invention, when the stealth device body takes the zrθ cylindrical coordinate system as a reference, the z-axis is the axial direction of the stealth device body, and the r-axis is the diameter of the stealth device body. The θ-axis is the tangential direction of the cloak body, and the two metal arms of the metal cross in the annular metal cross array are respectively parallel to the r-axis direction and the theta-axis direction.
根据本发明第一方面进一步的实施例,所述隐身器件在电场始终在Z轴方向偏振入射波的情况下需要各向异性及梯度分布的电磁参数为按照如下公式得到:According to a further embodiment of the first aspect of the present invention, the electromagnetic parameters of the anisotropy and gradient distribution required by the stealth device under the condition that the electric field always polarizes the incident wave in the Z-axis direction are obtained according to the following formula:
其中,μr为径向的磁导率;Among them, μ r is the radial permeability;
μθ为切向的磁导率;μ θ is the tangential permeability;
εz为轴向的介电常数;ε z is the dielectric constant of the axial direction;
ra为所述隐身器件主体的内部边界的半径;r a is the radius of the inner boundary of the body of the stealth device;
rb为所述隐身器件主体的外部边界的半径;r b is the radius of the outer boundary of the stealth device body;
r为所述隐身器件主体的中第1至第N层中任意一层所述金属十字环形阵列的圆环半径。r is an annular radius of the metal cross annular array in any one of the first to Nth layers in the stealth device body.
根据本发明第一方面进一步的实施例,所述环形金属十字阵列中的单个所述金属十字沿r轴和θ轴方向的两条金属臂长度不同。According to a further embodiment of the first aspect of the present invention, the lengths of the two metal arms along the r-axis and the θ-axis direction of a single metal cross in the annular metal cross array are different.
根据本发明第一方面进一步的实施例,所述晶格单元的几何尺寸小于工作频率下电磁波波长的1/5。According to a further embodiment of the first aspect of the present invention, the geometric size of the lattice unit is less than 1/5 of the wavelength of the electromagnetic wave at the working frequency.
根据本发明第一方面的一个实施例,所述第一电介质板的两侧面上的所述环形金属十字阵列对应地作为正极和负极给所述第一电介质板提供所述直流电场。According to an embodiment of the first aspect of the present invention, the annular metal cross arrays on both sides of the first dielectric plate serve as positive and negative electrodes to provide the first dielectric plate with the DC electric field correspondingly.
本发明第二方面还提出了一种电场调控二维全向金属-介质复合隐身器件的制作方法。The second aspect of the present invention also provides a method for manufacturing a two-dimensional omnidirectional metal-dielectric composite stealth device regulated by an electric field.
根据本发明第二方面实施例的电场调控二维全向金属-介质复合隐身器件的制作方法,所述电场调控二维全向金属-介质复合隐身器件为本发明第一方面任意一项实施例所述的电场调控二维全向金属-介质复合隐身器件,所述制作方法包括如下步骤:According to a method for fabricating an electric field regulated two-dimensional omnidirectional metal-dielectric composite stealth device according to an embodiment of the second aspect of the present invention, the electric field regulated two-dimensional omnidirectional metal-dielectric composite stealth device is any one of the embodiments of the first aspect of the present invention For the electric field regulated two-dimensional omnidirectional metal-dielectric composite stealth device, the fabrication method includes the following steps:
采用机加工的方式加工出所需几何尺寸的所述第一电介质板和所述第二电介质板;Process the first dielectric plate and the second dielectric plate with required geometrical dimensions by machining;
在所述第一电介质板两侧面上加工出所述环形金属十字阵列和所述直流偏压线,并将所述第一电介质板两侧的环形金属十字阵列通过所述直流偏压线分别接入所述直流稳压电源的正极和负极;The annular metal cross arrays and the DC bias lines are processed on both sides of the first dielectric plate, and the annular metal cross arrays on both sides of the first dielectric plate are respectively connected through the DC bias lines. into the positive and negative poles of the DC regulated power supply;
将附着有所述环形金属十字阵列和所述直流偏压线的所述第一电介质板与第二电介质板交替排列构成层状堆叠结构。The first dielectric plate and the second dielectric plate attached with the annular metal cross array and the DC bias line are alternately arranged to form a layered stack structure.
根据本发明第二方面实施例的电场调控二维全向金属-介质复合隐身器件1000的制作方法,选用高介电常数的电介质板,通过机加工的方式加工出所需几何尺寸的第一电介质板,选用低介电常数的电介质板,通过机加工的方式加工出所需几何尺寸的第二电介质板;通过印刷电路板、微加工或3D打印等方式在第一电介质板的两侧加工出所需环形金属十字阵列和直流偏压线,将附着有环形金属十字阵列和直流偏压线的第一电介质板和第二电介质板交替排列构成层状堆叠结构,得到隐身器件主体,多条直流偏压线一端分别一一对应地与第一电介质板两侧的环形金属十字阵列连接,另一端分别接入直流稳压电源的正极或负极。由此,电场调控二维全向金属-介质复合隐身器件制作简单,装配方便,通过直流电压控制器控制直流稳压电源的输出电压,调节第一电介质板两侧的直流电压,即调节第一电介质板所处的直流电场,从而改变第一电介质板的介电常数,改变金属十字的谐振特性,使得环形金属十字阵列的等效磁导率色散曲线发生移动,可以对隐身器件的工作频率进行调谐,由此实现对不同频段的电磁波的隐身。According to the method for fabricating the electric field regulated two-dimensional omnidirectional metal-dielectric
本发明的附加方面和优点将在下面的描述中部分给出,部分将从下面的描述中变得明显,或通过本发明的实践了解到。Additional aspects and advantages of the present invention will be set forth, in part, from the following description, and in part will be apparent from the following description, or may be learned by practice of the invention.
附图说明Description of drawings
本发明的上述和/或附加的方面和优点从结合下面附图对实施例的描述中将变得明显和容易理解,其中:The above and/or additional aspects and advantages of the present invention will become apparent and readily understood from the following description of embodiments taken in conjunction with the accompanying drawings, wherein:
图1为本发明第一方面实施例的电场调控二维全向金属-介质复合隐身器件的结构示意图。FIG. 1 is a schematic structural diagram of an electric field regulated two-dimensional omnidirectional metal-dielectric composite stealth device according to an embodiment of the first aspect of the present invention.
图2为图1中A处的放大示意图。FIG. 2 is an enlarged schematic view of A in FIG. 1 .
图3为本发明第一方面实施例的电场调控二维全向金属-介质复合隐身器件中长方体晶格单元的结构示意图。3 is a schematic structural diagram of a cuboid lattice unit in an electric field regulated two-dimensional omnidirectional metal-dielectric composite stealth device according to an embodiment of the first aspect of the present invention.
图4为本发明第一方面实施例的电场调控二维全向金属-介质复合隐身器件中第一电介质板和金属十字的装配示意图。FIG. 4 is a schematic diagram of the assembly of the first dielectric plate and the metal cross in the electric field regulated two-dimensional omnidirectional metal-dielectric composite stealth device according to the first aspect of the present invention.
图5为本发明第一方面实施例的电场调控二维全向金属-介质复合隐身器件中层状堆叠结构的结构示意图。FIG. 5 is a schematic structural diagram of a layered stack structure in an electric field regulated two-dimensional omnidirectional metal-dielectric composite stealth device according to an embodiment of the first aspect of the present invention.
图6为本发明第一方面实施例的电场调控二维全向金属-介质复合隐身器件对平面电磁波的隐身效果图。6 is a diagram showing the stealth effect of the two-dimensional omnidirectional metal-dielectric composite stealth device regulated by the electric field to planar electromagnetic waves according to the embodiment of the first aspect of the present invention.
图7为本发明第一方面实施例的电场调控二维全向金属-介质复合隐身器件对柱面电磁波的隐身效果图。7 is a diagram showing the stealth effect of the two-dimensional omnidirectional metal-dielectric composite stealth device regulated by the electric field to cylindrical electromagnetic waves according to the embodiment of the first aspect of the present invention.
图8为本发明第一方面实施例的电场调控二维全向金属-介质复合隐身器件的隐身器件主体中一个长方体晶格单元的等效磁导率和等效介电常数的色散曲线。FIG. 8 is the equivalent magnetic permeability of a cuboid lattice unit in the stealth device main body of the two-dimensional omnidirectional metal-dielectric composite stealth device according to the embodiment of the first aspect of the present invention. and the equivalent dielectric constant dispersion curve.
图9为障碍物的散射截面随频率变化的示意图,其中,实线为障碍物位于圆柱状空间中时的散射截面随频率变化的曲线,虚线为只有障碍物而无隐身器件时的散射截面随频率变化的曲线。Fig. 9 is a schematic diagram of the scattering cross section of an obstacle as a function of frequency, in which the solid line is the curve of the scattering cross section with frequency when the obstacle is located in a cylindrical space, and the dashed line is the scattering cross section when there is only an obstacle but no stealth device. Frequency change curve.
附图标记:Reference number:
隐身器件1000
隐身器件主体1
层状堆叠结构11Layered
圆柱状空间111 圆环柱状体112 第一电介质板113 第二电介质板114
环形金属十字阵列12Circular
金属十字121 金属臂1211
晶格单元13
电场调控系统2Electric
直流稳压电源21 直流偏压线22 直流电压控制器23DC stabilized
平面电磁波发射源3 平面电磁波31Planar electromagnetic
柱面电磁波发射源4 柱面电磁波41Cylindrical electromagnetic
具体实施方式Detailed ways
下面详细描述本发明的实施例,所述实施例的示例在附图中示出,其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的,仅用于解释本发明,而不能理解为对本发明的限制。The following describes in detail the embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary, only used to explain the present invention, and should not be construed as a limitation of the present invention.
下面结合图1至图9来描述本发明第一方面实施例的电场调控二维全向金属-介质复合隐身器件1000。The following describes the electric field regulated two-dimensional omnidirectional metal-dielectric composite
如图1至图7所示,根据本发明第一方面实施例的电场调控二维全向金属-介质复合隐身器件1000,包括隐身器件主体1和电场调控系统2,隐身器件主体1包括第一电介质板113、第二电介质板114和环形金属十字阵列12;其中,第一电介质板113的介电常数高于第二电介质板114的介电常数,第一电介质板113和第二电介质板114均为圆环柱状,第一电介质板113和第二电介质板114交替排列构成层状堆叠结构11,层状堆叠结构11为具有圆柱状空间111的圆环柱状体112;第一电介质板113的两侧面上分别附着N层环形金属十字阵列12,N为大于1的整数,每层环形金属十字阵列12包括多个长方体晶格单元13,其中,每个长方体晶格单元13内包含有两个对称分布于第一电介质板113两侧面的金属十字121,每层环形金属十字阵列12的长方体晶格单元13和单元内的金属十字121的几何尺寸相同,不同层环形金属十字阵列12的长方体晶格单元13和单元内的金属十字121的几何尺寸不同;电场调控系统2包括直流稳压电源21、直流偏压线22和直流电压控制器23;其中,直流稳压电源21用于对第一电介质板113施加稳定的直流电压,以使第一电介质板113处于稳定直流电场中;第一电介质板113的两侧面上的环形金属十字阵列12通过直流偏压线22分别与直流稳压电源21的正极和负极相连;直流电压控制器23用于控制直流稳压电源21的输出电压以调节施加于第一电介质板113的直流电场,从而改变第一电介质板113本身的介电常数,使隐身器件主体1的频率特性曲线发生移动,实现对隐身器件1000工作频率的调谐。As shown in FIGS. 1 to 7 , an electric field control two-dimensional omnidirectional metal-dielectric composite
具体地,如图1和图4所示,隐身器件主体1包括第一电介质板113、第二电介质板114和环形金属十字阵列12;其中,第一电介质板113的介电常数高于第二电介质板114的介电常数,第一电介质板113和第二电介质板114均为圆环柱状,第一电介质板113和第二电介质板114交替排列构成层状堆叠结构11,层状堆叠结构11为具有圆柱状空间111的圆环柱状体112;第一电介质板113的两侧面上分别附着N层环形金属十字阵列12,N为大于1的整数,每层环形金属十字阵列12包括多个长方体晶格单元13,其中,每个长方体晶格单元13内包含有两个对称分布于第一电介质板113两侧面的金属十字121,每层环形金属十字阵列12的长方体晶格单元13和单元内的金属十字121的几何尺寸相同,不同层环形金属十字阵列12的长方体晶格单元13和单元内的金属十字121的几何尺寸不同。可以理解的是,第一电介质板113和第二电介质板114交替排列构成层状堆叠结构11,第一电介质板113的两侧面分别附着有环形金属十字阵列12,这样,通过金属十字121的磁谐振可以实现沿金属十字121的两条金属臂1211方向的等效各向异性磁导率,通过第一电介质板113和第二电介质板114的层状堆叠结构11实现沿堆叠方向上的等效介电常数,隐身器件1000可以满足变换光学理论控制电磁波传播路径与相位的要求,从而实现对圆柱状空间111内部障碍物的隐身;优选地,第一电介质板113的介电常数远远高于第二电介质板114的介电常数。Specifically, as shown in FIGS. 1 and 4 , the
电场调控系统2包括直流稳压电源21、直流偏压线22和直流电压控制器23;其中,直流稳压电源21用于对第一电介质板113施加稳定的直流电压,以使第一电介质板113处于稳定直流电场中;第一电介质板113的两侧面上的环形金属十字阵列12通过直流偏压线22分别与直流稳压电源21的正极和负极相连;直流电压控制器23用于控制直流稳压电源21的输出电压以调节施加于第一电介质板113的直流电场,从而改变第一电介质板113本身的介电常数,使隐身器件主体1的频率特性曲线发生移动,实现对隐身器件1000工作频率的调谐。可以理解的是,第一电介质板113两侧面的环形金属十字阵列12通过直流偏压线22分别连接在一起并接入直流稳压电源21的正极或负极,以向第一电介质板113施加稳定的直流电场,利用第一电介质板113本身的介电常数随所处直流电场的变化而改变的特性,通过直流电压控制器23控制直流稳压电源21的输出电压,调节第一电介质板113两侧的直流电压,即调节第一电介质板113所处的直流电场,从而改变第一电介质板113的介电常数,改变金属十字121的谐振特性,使得环形金属十字阵列12的等效磁导率色散曲线发生移动,可以对隐身器件1000的工作频率进行调谐由此实现对不同频段的电磁波的隐身。The electric
根据本发明第一方面实施例的电场调控二维全向金属-介质复合隐身器件1000,第一电介质板113和第二电介质板114交替排列构成层状堆叠结构11,第一电介质板113的两侧面分别附着有环形金属十字阵列12,金属十字121在交变磁场中会产生磁谐振,这样,通过金属十字121的磁谐振可以实现沿金属十字121的两条金属臂1211方向的等效各向异性磁导率,通过第一电介质板113和第二电介质板114的层状堆叠结构11实现沿堆叠方向上的等效介电常数,当隐身器件1000在某一特定频段实现变换光学理论所要求的特定各向异性的等效介电常数和等效磁导率时,隐身器件1000可以控制电磁波传播路径与相位的要求,使得圆柱状空间111内的障碍物能够对二维平面内包括平面波和柱面波在内的任意波形以及任意入射方向的电磁波实现隐身;通过直流电压控制器23控制直流稳压电源21的输出电压,调节第一电介质板113两侧的直流电压,即调节第一电介质板113所处的直流电场,从而改变第一电介质板113的介电常数,改变金属十字121的谐振特性,使得环形金属十字阵列12的等效磁导率色散曲线发生移动,可以对隐身器件1000的工作频率进行调谐,由此实现对不同频段的电磁波的隐身。此外,隐身器件1000采用层叠堆叠结构11而不需要额外的支撑框架或基板。综上,本发明第一方面实施例的电场调控二维全向金属-介质复合隐身器件1000可以实现对不同频段的电磁波的隐身,适用范围大、控制方便、结构简单合理、装配方便且结构稳定性高。According to the electric field regulated two-dimensional omnidirectional metal-dielectric composite
需要说明的是,当保持长方体晶格单元13和金属十字121的几何尺寸、第一电介质板113和第二电介质板114的厚度不变,将隐身器件1000的圆柱状空间111的圆环柱状体112的面积等比扩大,或增加隐身器件1000在z轴方向上的长方体晶格单元13的周期个数,则可以增大圆柱状空间的空间大小,实现对更大尺寸的障碍物的隐身。It should be noted that, when the geometrical dimensions of the
根据本发明第一方面的一个实施例,第一电介质板113的介电常数随电场的变化而变化,并且第一电介质板113的介电常数的数值大于50。可以理解的是,由于高介电常数电介质板的介电常数会跟随电场变化而明显变化,第一电介质板113应该选用介电常数随外加电场变化系数较大的高介电常数电介质板,由此通过调节电场可以明显的调节第一电介质板113的介电常数,例如,第一电介质板113可以为介电常数大于50的铁电陶瓷材料。According to an embodiment of the first aspect of the present invention, the dielectric constant of the first
根据本发明第一方面进一步的实施例,第二电介质板114的介电常数范围为0.8~2.0。具体地,第二电介质板114的介电常数可以为0.8、1.0或1.2,第二电介质板114应选用介电常数远低于第一电介质板113的低介电常数电介质板,例如,轻木或含氟聚合物泡沫等,可以有效地减少对入射电磁波的干扰。According to a further embodiment of the first aspect of the present invention, the dielectric constant of the second
根据本发明第一方面的一个实施例,隐身器件主体1以zrθ柱坐标系为参考时,其中,z轴为隐身器主体的轴向方向,r轴为隐身器主体的径向方向,θ轴为隐身器主体的切向方向,环形金属十字阵列12中的金属十字121的两条金属臂1211分别平行于r轴方向和θ轴方向。具体地,隐身器件主体1以zrθ柱坐标系为参考时,金属十字121中平行于r轴方向的金属臂1211用于实现θ轴方向的磁谐振,平行于θ轴方向的金属臂1211用于实现r轴方向的磁谐振,这使得长方体晶格单元13在r轴和θ轴方向上分别具有各向异性的等效磁导率,例如,第j层的长方体晶格单元13在r轴和θ轴方向上的各向异性的等效磁导率分别为和 According to an embodiment of the first aspect of the present invention, when the
根据本发明第一方面进一步的实施例,隐身器件1000在电场始终在Z轴方向偏振入射波的情况下需要各向异性及梯度分布的电磁参数为按照如下公式得到:According to a further embodiment of the first aspect of the present invention, the electromagnetic parameters of the anisotropy and gradient distribution required by the
其中,μr为径向的磁导率;Among them, μ r is the radial permeability;
μθ为切向的磁导率;μ θ is the tangential permeability;
εz为轴向的介电常数;ε z is the dielectric constant of the axial direction;
ra为隐身器件主体1的内部边界的半径;r a is the radius of the inner boundary of the
rb为隐身器件主体1的外部边界的半径;r b is the radius of the outer boundary of the
r为隐身器件主体1的中第1至第N层中任意一层金属十字121环形阵列的圆环半径。r is the annular radius of the annular array of metal crosses 121 in any one of the first to Nth layers in the
可以理解的是,根据变换光学原理,当确定隐身器件主体1内部边界和外部边界的半径ra和rb后,可以通过理想电磁参数公式计算隐身器件主体1各处所要求的特定的各向异性及梯度分布的介电常数和磁导率,理想电磁参数公式通过柱坐标的形式来表示,隐身器件1000在电场始终在z轴方向偏振的情况下需要各向异性及梯度分布的电磁参数可以按照如下理想电磁参数公式得到:It can be understood that, according to the principle of transformation optics, when the radii ra and r b of the inner and outer boundaries of the
该理想电磁参数是随位置而连续变化的,这是利用超材料所无法实现的,因此需要对隐身器件主体1内的电磁参数进行离散化处理,即将隐身器件主体1划分成多层环形区域,令每层环形区域内的电磁参数保持不变且等于该圆环形区域内部边界与外部边界之间中间处的电磁参数值。The ideal electromagnetic parameter changes continuously with the position, which cannot be realized by using metamaterials. Therefore, it is necessary to discretize the electromagnetic parameters in the
根据楞次定律和电磁感应定律,处在交变电磁场中的金属十字121中会产生交变电流,分布于第一电介质板113两侧的每对金属十字121的金属臂1211中电流方向相反,从而能在垂直于金属臂1211的两个方向上产生磁谐振,因此利用环形金属十字阵列12中平行于r轴方向的金属臂1211来实现θ轴方向的磁导率μθ,利用环形金属十字阵列12中平行于θ轴方向的金属臂1211来实现r轴方向的磁导率μr,以及利用第一电介质板113与第二电介质板114的层状堆叠结构11来实现z轴方向的磁导率εz。According to Lenz's law and the law of electromagnetic induction, an alternating current will be generated in the
需要说明的是,每一对金属十字121及其所处的长方体区域内的第一电介质板113和第二电介质板114构成了一个长方体晶格单元13,一个长方体晶格单元13的等效磁导率是入射电磁波频率的函数,而等效介电常数在工作频段内几乎不随频率变化而改变。利用金属十字121的磁谐振特性,调节环形金属十字阵列12的几何参数(金属臂1211的长度、金属臂1211的线宽、环形金属十字阵列12的周期长度等),使得在某一工作频段下,金属-介质复合超材料长方体晶格单元13在几个不同方向上的等效磁导率和等效介电常数同时达到变换光学理论所要求的值,并且在离散化后的不同层的环形区域中利用不同尺寸的金属十字121和长方体晶格单元13构造环形阵列,以实现所需的梯度电磁参数,此时隐身器件主体1中的电磁波将绕过圆柱状空间111出射,并且在出射时回到原来的传播方向上,从而实现对电磁波的隐身。由于在交变电磁场中,金属十字121内部产生了交变电流,相当于一个RLC串联谐振回路,该串联回路的等效电感L和等效电容C均与第一电介质板113本身的介电常数有关,因此,通过调节电场改变第一电介质板113本身的介电常数,可以改变RLC串联谐振回路的等效电感值与等效电容值,使金属十字121的谐振特性曲线发生移动,这样,每一个金属-介质复合超材料长方体晶格单元13所对应的工作频率也发生相应的移动。而对于任意两个不同的晶格单元13,其工作频率之比只与其金属臂1211的长度之比有关,与第一电介质板113本身的介电常数无关,因此通过电场调控系统2改变第一电介质板113本身的介电常数,每一个晶格单元13的工作频率均发生移动,但任意两个晶格单元13的工作频率均相同,从而达到调谐隐身器件主体1工作频率的目的。It should be noted that each pair of metal crosses 121 and the first
需要说明的是,如图8所示,为隐身器件主体1中一个长方体晶格单元13的等效磁导率和等效介电常数的色散曲线。由环形金属十字阵列12实现的各向异性等效磁导率和在磁谐振频率处具有洛仑兹线型的色散曲线,由第一电介质板113与第二电介质板114的层状堆叠结构11实现的等效介电常数具有几乎非色散的常数值,能够实现一定范围内的等效磁导率和等效介电常数,并且该超材料结构不同方向上的电磁谐振间不存在耦合,能够实现对等效电磁参数的精准设计。It should be noted that, as shown in FIG. 8 , is the equivalent magnetic permeability of a
下面以三个具体的例子来描述ra和rb不同时,隐身器件主体1内由内到外每层所需要的各向异性的电磁参数。The following three specific examples are used to describe the anisotropic electromagnetic parameters required by each layer in the
取ra为30mm,rb为60mm,将隐身器件主体1离散成5层环形区域,则隐身器件主体1由内到外每层所需要的各向异性的电磁参数如下:Taking ra as 30mm and rb as 60mm, and discretizing the main body of the
进一步地,取ra为30mm,rb为60mm,将隐身器件主体1离散成10层环形区域,则隐身器件主体1由内到外每层所需要的各向异性的电磁参数如下:Further, taking ra as 30 mm and r b as 60 mm, and discretizing the
进一步地,取ra为30mm,rb为90mm,将隐身器件主体1离散成10层环形区域,则隐身器件主体1由内到外每层所需要的各向异性的电磁参数如下:Further, taking ra as 30mm and rb as 90mm, and discretizing the main body of the
下面根据两个具体的例子来描述本发明第一方面实施例的电场调控二维全向金属-介质复合隐身器件1000。The two-dimensional omnidirectional metal-dielectric composite
将障碍物放在隐身器件1000内的圆柱状区域中,对于平面电磁波发射源3发射的在二维平面内沿任意方向入射的平面电磁波31,电场调控二维全向金属-介质复合隐身器件1000对平面电磁波31实现隐身的效果如图6所示,隐身器件1000能控制出射电磁波的等相位面仍为平面,且传播方向与入射电磁波一致,即实现了对平面电磁波31的隐身。The obstacle is placed in the cylindrical area in the
将障碍物放在隐身器件1000内的圆柱状区域中,对于在二维平面内任意位置的柱面电磁波发射源4发射的柱面电磁波41,电场调控二维全向金属-介质复合隐身器件1000对柱面电磁波41实现隐身的效果如图7所示,隐身器件1000能控制出射电磁波的等相位面仍为柱面,且传播方向与入射电磁波一致,同样实现了对柱面电磁波41的隐身。The obstacle is placed in the cylindrical area in the
根据本发明第一方面进一步的实施例,环形金属十字阵列12中的单个金属十字121沿r轴和θ轴方向的两条金属臂1211长度不同。具体地,如图3和图4所示,第j层的金属十字121沿r轴方向的金属臂1211长度为Lr,j,金属十字121沿θ轴方向的金属臂1211长度为Lθ,j,环形金属十字阵列12沿r轴方向的分布周期为单元沿r轴方向的长度Pr,j,环形金属十字阵列12沿θ轴方向的分布周期为单元沿θ轴方向的长度Pθ,j。According to a further embodiment of the first aspect of the present invention, the lengths of the two
根据本发明第一方面进一步的实施例,长方体晶格单元13的几何尺寸小于工作频率下电磁波波长的1/5。可以理解的是,将长方体晶格单元13的几何尺寸限定在工作频率的电磁波波长的1/5以下,可以满足超材料的等效媒质理论要求,使得长方体晶格单元13能够等效为一种均匀媒质,并可以用等效磁导率和等效介电常数来描述其电磁特性。According to a further embodiment of the first aspect of the present invention, the geometric size of the
根据本发明第一方面的一个实施例,第一电介质板113的两侧面上的环形金属十字阵列12对应地作为正极和负极给第一电介质板113提供直流电场。可以理解的是,第一电介质板113两侧面的环形金属十字阵列12通过直流偏压线22分别连接在一起并接入直流稳压电源21的正极和负极,以向第一电介质板113施加稳定的直流电场,由于第一电介质板113具有本身的介电常数随所处直流电场的变化而改变的特性,通过直流电压控制器23控制直流稳压电源21的输出电压,使得第一电介质板113的两侧面上的环形金属十字阵列12可以调节第一电介质板113两侧直流电压,即调节第一电介质板113所处的直流电场,从而改变第一电介质板113的介电常数。According to an embodiment of the first aspect of the present invention, the annular
本发明第二方面还提出了一种电场调控二维全向金属-介质复合隐身器件1000的制作方法。The second aspect of the present invention also provides a method for fabricating the two-dimensional omnidirectional metal-dielectric composite
根据本发明第二方面实施例的电场调控二维全向金属-介质复合隐身器件1000的制作方法,电场调控二维全向金属-介质复合隐身器件1000为本发明第一方面任意一项实施例的电场调控二维全向金属-介质复合隐身器件1000,制作方法包括如下步骤:According to the manufacturing method of the electric field regulated two-dimensional omnidirectional metal-dielectric composite
采用机加工的方式加工出所需几何尺寸的第一电介质板113和第二电介质板114;Process the first
在第一电介质板113两侧面上加工出环形金属十字阵列12和直流偏压线22,并将第一电介质板113两侧的环形金属十字阵列12通过直流偏压线22分别接入直流稳压电源21的正极和负极;The annular
将附着有环形金属十字阵列12和直流偏压线22的第一电介质板113与第二电介质板114交替排列构成层状堆叠结构11。The first
根据本发明第二方面实施例的电场调控二维全向金属-介质复合隐身器件1000的制作方法,选用高介电常数的电介质板,通过机加工的方式加工出所需几何尺寸的第一电介质板113,选用低介电常数的电介质板,通过机加工的方式加工出所需几何尺寸的第二电介质板114;通过印刷电路板、微加工或3D打印等方式在第一电介质板113的两侧加工出所需环形金属十字阵列12和直流偏压线22,将附着有环形金属十字阵列12和直流偏压线22的第一电介质板113和第二电介质板114交替排列构成层状堆叠结构11,得到隐身器件主体1,多条直流偏压线22一端分别一一对应地与第一电介质板113两侧的环形金属十字阵列12连接,另一端分别接入直流稳压电源21的正极或负极。由此,电场调控二维全向金属-介质复合隐身器件1000制作简单,装配方便,通过直流电压控制器23控制直流稳压电源21的输出电压,调节第一电介质板113两侧的直流电压,即调节第一电介质板113所处的直流电场,从而改变第一电介质板113的介电常数,改变金属十字121的谐振特性,使得环形金属十字阵列12的等效磁导率色散曲线发生移动,可以对隐身器件1000的工作频率进行调谐,由此实现对不同频段的电磁波的隐身。According to the method for fabricating the electric field regulated two-dimensional omnidirectional metal-dielectric composite
如图9所示,图中实线为障碍物位于隐身器件主体1的圆柱状空间111中时的散射截面随频率的变化曲线,虚线为只有障碍物而无隐身器件1000时的散射截面随频率的变化曲线。在工作频率处隐身器件1000的散射截面达到最低点并且小于障碍物的散射截面,表明隐身器件1000对位于圆柱状空间111中的障碍物能实现有效隐身。As shown in FIG. 9 , the solid line in the figure is the variation curve of the scattering cross section with frequency when the obstacle is located in the
在本说明书的描述中,参考术语“一个实施例”、“一些实施例”、“示意性实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、或者特点包含于本发明的至少一个实施例或示例中。在本说明书中,对上述术语的示意性表述不一定指的是相同的实施例或示例。而且,描述的具体特征、结构、或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。In the description of this specification, reference to the terms "one embodiment," "some embodiments," "exemplary embodiment," "example," "specific example," or "some examples", etc., is meant to incorporate the embodiments A particular feature, structure, or characteristic described by an example or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples.
尽管已经示出和描述了本发明的实施例,本领域的普通技术人员可以理解:在不脱离本发明的原理和宗旨的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由权利要求及其等同物限定。Although embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, The scope of the invention is defined by the claims and their equivalents.
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