CN111900878B - Adaptive hysteresis control converter for enhancing transient characteristics, control method and device - Google Patents
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
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- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/1566—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators with means for compensating against rapid load changes, e.g. with auxiliary current source, with dual mode control or with inductance variation
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Abstract
本申请提供了一种增强瞬态特性的自适应迟滞控制变换器、控制方法及设备，所述变换器用于将输入电能变换成负载所需的电压或电流可控的电能，包括补偿单元，输入单元，处理单元和比较单元，其特征在于，所述补偿单元和所述处理单元分别与所述输入单元和比较单元连接。相比于现有电感电流采样的斜坡补偿的技术方案，本发明利用MOS管工作在线性电阻区的特性，替代传统的RC电阻，使其在稳态和瞬态条件下产生不同的斜坡补偿特性，即实现了变换器在稳态下的稳定性，又在瞬态时利用反馈控制改变MOS的线性阻值，提高斜坡补偿能力，改善了迟滞控制变换器的瞬态特性，而且本发明电路结构简单，技术操作容易，成本更低。
The present application provides an adaptive hysteresis control converter, control method and device with enhanced transient characteristics, wherein the converter is used to convert input electric energy into voltage or current controllable electric energy required by a load, and comprises a compensation unit, an input unit, a processing unit and a comparison unit, wherein the compensation unit and the processing unit are connected to the input unit and the comparison unit, respectively. Compared with the existing technical solution of slope compensation for inductive current sampling, the present invention utilizes the characteristic of MOS tube working in the linear resistance region to replace the traditional RC resistor, so that it produces different slope compensation characteristics under steady-state and transient conditions, that is, the stability of the converter is achieved in the steady state, and the linear resistance value of MOS is changed by feedback control in the transient state, so as to improve the slope compensation capability and improve the transient characteristics of the hysteresis control converter. Moreover, the present invention has a simple circuit structure, easy technical operation and lower cost.
Description
技术领域Technical Field
本申请涉及集成电路领域，特别是一种增强瞬态特性的自适应迟滞控制变换器、控制方法及设备。The present application relates to the field of integrated circuits, and in particular to an adaptive hysteresis control converter, control method and device for enhancing transient characteristics.
背景技术Background Art
Buck变换器(降压型开关变换器)应用较为广泛的有电压控制模式、峰值电流控制模式和迟滞控制模式。由于迟滞控制模式相比于电压控制模式和峰值电流控制模式，具有不需要补偿网络和误差放大器，环路结构简单并自震荡，同时瞬态响应速度较快、功耗较低，因而广泛得到应用。Buck converters (step-down switching converters) are widely used in voltage control mode, peak current control mode and hysteresis control mode. Compared with voltage control mode and peak current control mode, hysteresis control mode does not require compensation network and error amplifier, has a simple loop structure and self-oscillation, and has a fast transient response speed and low power consumption, so it is widely used.
迟滞控制模式的变换器需要采样输出纹波做反馈控制，在超低反馈基准电压的发展趋势下，迟滞控制模式越来越难以实现更好的瞬态特性，因此通常迟滞控制模式会加入斜坡补偿电路来增强变换器的瞬态特性，现有的带有斜坡补偿电路的迟滞控制模式变换器结构如图1、2所示，现有的斜坡补偿方案虽然能够保证系统的稳定，但是其补偿采用静态补偿，系统瞬态响应不能达到最佳。The converter of hysteresis control mode needs to sample the output ripple for feedback control. Under the development trend of ultra-low feedback reference voltage, it is increasingly difficult for hysteresis control mode to achieve better transient characteristics. Therefore, a slope compensation circuit is usually added to the hysteresis control mode to enhance the transient characteristics of the converter. The structure of the existing hysteresis control mode converter with a slope compensation circuit is shown in Figures 1 and 2. Although the existing slope compensation scheme can ensure the stability of the system, its compensation adopts static compensation, and the transient response of the system cannot reach the best.
为此，相比于静态斜坡补偿，为了进一步提高变换器的瞬态特性，带有自适应的斜坡补偿方案的迟滞控制模式变换器也被广泛的应用。现自适应迟滞控制变换器主要有两种：Therefore, compared with static slope compensation, in order to further improve the transient characteristics of the converter, hysteresis control mode converters with adaptive slope compensation schemes are also widely used. There are two main types of adaptive hysteresis control converters:
一种通过采用动态可变补偿电容来改变带宽，从而增强瞬态特性，但该技术需要保证电容的精确设计以及提供电容倍增效应所需要的外部动态偏置电路，对技术实现要求较高；One method is to change the bandwidth by using a dynamically variable compensation capacitor to enhance the transient characteristics. However, this technology requires the precise design of the capacitor and the external dynamic bias circuit required to provide the capacitance multiplication effect, which has high requirements for technical implementation.
另一种主要采用自适应斜坡产生电路来产生代表电感电流的斜坡信号，采用动态调整方式的上下阈值电压的迟滞模式，从而使变换器获得良好的瞬态响应特性，但电路实现较为复杂，实现成本较高。The other method mainly uses an adaptive ramp generation circuit to generate a ramp signal representing the inductor current, and adopts a hysteresis mode of the upper and lower threshold voltages in a dynamically adjusted manner, so that the converter obtains good transient response characteristics, but the circuit implementation is relatively complex and the implementation cost is relatively high.
发明内容Summary of the invention
鉴于所述问题，提出了本申请以便提供克服所述问题或者至少部分地解决所述问题的一种增强瞬态特性的自适应迟滞控制变换器、控制方法及设备，包括：In view of the above problems, the present application is proposed to provide an adaptive hysteresis control converter, control method and device with enhanced transient characteristics that overcome the above problems or at least partially solve the above problems, including:
一种增强瞬态特性的自适应迟滞控制变换器，所述变换器用于将输入电能变换成负载所需的电压或电流可控的电能，包括补偿单元，输入单元，处理单元和比较单元，所述补偿单元和所述处理单元分别与所述输入单元和比较单元连接；An adaptive hysteresis control converter with enhanced transient characteristics, the converter is used to convert input electric energy into voltage or current controllable electric energy required by a load, and comprises a compensation unit, an input unit, a processing unit and a comparison unit, wherein the compensation unit and the processing unit are connected to the input unit and the comparison unit respectively;
其中，所述补偿单元包括，MOS管M3、MOS管M4、MOS管M5、运算放大器OP3、电容C2、电容C3、电感L和电阻R1；The compensation unit includes a MOS tube M3, a MOS tube M4, a MOS tube M5, an operational amplifier OP3, a capacitor C2, a capacitor C3, an inductor L and a resistor R1;
所述MOS管M3漏端及栅端分别与输入单元连接，The drain terminal and gate terminal of the MOS tube M3 are respectively connected to the input unit.
所述MOS管M3的栅端分别与所述MOS管M4的栅端、所述运算放大器OP3的输出端和所述运算放大器OP3的正向输入端连接，The gate end of the MOS tube M3 is respectively connected to the gate end of the MOS tube M4, the output end of the operational amplifier OP3 and the positive input end of the operational amplifier OP3.
所述MOS管M3的源端分别与所述MOS管M5的栅端及漏端、所述MOS管M4的漏端、所述电感L的一端和所述输入单元连接，The source end of the MOS tube M3 is respectively connected to the gate end and the drain end of the MOS tube M5, the drain end of the MOS tube M4, one end of the inductor L and the input unit.
所述MOS管M4的源端分别与所述电容C2的一端和所述电容C3的一端连接，The source end of the MOS tube M4 is connected to one end of the capacitor C2 and one end of the capacitor C3 respectively.
所述MOS管M5的源端与所述电容C2另一端、所述电感L的另一端、所述电阻R1的一端连接，The source end of the MOS tube M5 is connected to the other end of the capacitor C2, the other end of the inductor L, and one end of the resistor R1.
所述运算放大器OP3的反向输入端分别与所述电容C3的另一端、所述电阻R1的另一端和所述比较单元连接。The inverting input terminal of the operational amplifier OP3 is respectively connected to the other end of the capacitor C3 , the other end of the resistor R1 , and the comparison unit.
进一步地，所述输入单元包括二极管D1、MOS管M1、MOS管M2、电容C1和缓冲器Buffer；Furthermore, the input unit includes a diode D1, a MOS tube M1, a MOS tube M2, a capacitor C1 and a buffer Buffer;
所述缓冲器Buffer分别与所述MOS管M1的栅端和漏端、所述MOS管M2的栅端、所述处理单元、所述二极管D1的输入端和输入电源的正极连接；The buffer Buffer is respectively connected to the gate terminal and the drain terminal of the MOS tube M1, the gate terminal of the MOS tube M2, the processing unit, the input terminal of the diode D1 and the positive electrode of the input power supply;
所述MOS管M1的漏端与所述二极管D1的输入端连接；所述MOS管M1的源端分别与所述MOS管M2的漏端、所述电容C1的另一端、所述电感L的一端连接；The drain end of the MOS tube M1 is connected to the input end of the diode D1; the source end of the MOS tube M1 is respectively connected to the drain end of the MOS tube M2, the other end of the capacitor C1, and one end of the inductor L;
所述二极管D1的输出端分别与所述MOS管M3的漏端和栅端以及所述电容C1的一端连接；The output end of the diode D1 is respectively connected to the drain end and the gate end of the MOS tube M3 and one end of the capacitor C1;
所述MOS管M2的源端接地。The source end of the MOS tube M2 is grounded.
进一步地，所述比较单元包括比较器COMP1和比较器COMP2；Further, the comparison unit includes a comparator COMP1 and a comparator COMP2;
所述比较器COMP1的输出端与所述处理单元连接；所述比较器COMP1的正向输入端与所述电阻R1的另一端连接；所述比较器COMP1的反向输入端与比较电压VFBH的输入端连接；The output end of the comparator COMP1 is connected to the processing unit; the positive input end of the comparator COMP1 is connected to the other end of the resistor R1; the negative input end of the comparator COMP1 is connected to the input end of the comparison voltage VFBH;
所述比较器COMP2的输出端与所述处理单元连接；所述比较器COMP1的反向输入端与所述电阻R1的另一端连接；所述比较器COMP2的正向输入端与比较电压VFBL的输入端连接。The output end of the comparator COMP2 is connected to the processing unit; the inverting input end of the comparator COMP1 is connected to the other end of the resistor R1; and the positive input end of the comparator COMP2 is connected to the input end of the comparison voltage VFBL.
进一步地，所述MOS管M3、所述MOS管M4和所述MOS管M5以构成钳位两管分裂串联的方式连接，其中，所述MOS管M5为钳位MOS管。Further, the MOS transistor M3, the MOS transistor M4 and the MOS transistor M5 are connected in a manner of forming a clamped two-tube split series connection, wherein the MOS transistor M5 is a clamped MOS transistor.
进一步地，所述MOS管M4的线性阻值处于VDS4＜VGS3-VTH3的线性电阻区；其中，VGS3为MOS管M3栅源间的电压；VDS4为MOS管M4漏源间的电压；VTH3为MOS管M3栅端的阈值电压。Furthermore, the linear resistance of the MOS tube M4 is in the linear resistance region of V DS4 <V GS3 -V TH3 ; wherein V GS3 is the gate-source voltage of the MOS tube M3; V DS4 is the drain-source voltage of the MOS tube M4; and V TH3 is the threshold voltage of the gate terminal of the MOS tube M3.
进一步地，所述MOS管M5的源端还通过输出电容Cout接地。Furthermore, the source end of the MOS tube M5 is also grounded through an output capacitor Cout.
进一步地，所述运算放大器OP3的反向输入端通过电阻R2接地。Furthermore, the inverting input terminal of the operational amplifier OP3 is grounded through the resistor R2.
一种的增强瞬态特性的自适应迟滞控制变换器的控制方法，A control method for an adaptive hysteresis control converter with enhanced transient characteristics,
当负载稳定时，保持所述MOS管M4的线性阻值不变。When the load is stable, the linear resistance of the MOS tube M4 is kept unchanged.
进一步地，Further,
当负载从轻载转重载时，降低所述MOS管M4的线性阻值。When the load changes from light load to heavy load, the linear resistance of the MOS tube M4 is reduced.
一种设备，包括如上述实施例任意一项所述的增强瞬态特性的自适应迟滞控制变换器。A device comprises the adaptive hysteresis control converter with enhanced transient characteristics as described in any one of the above embodiments.
本申请具有以下优点：This application has the following advantages:
在本申请的实施例中，所述补偿单元和所述处理单元分别与所述输入单元和比较单元连接；其中，所述补偿单元包括，MOS管M3、MOS管M4、MOS管M5、运算放大器OP3、电容C2、电容C3、电感L和电阻R1；所述MOS管M3漏端及栅端分别与输入单元连接，所述MOS管M3的栅端分别与所述MOS管M4的栅端、所述运算放大器OP3的输出端和所述运算放大器OP3的正向输入端连接，所述MOS管M3的源端分别与所述MOS管M5的栅端及漏端、所述MOS管M4的漏端、所述电感L的一端和所述输入单元连接，所述MOS管M4的源端分别与所述电容C2的一端和所述电容C3的一端连接，所述MOS管M5的源端与所述电容C2另一端、所述电感L的另一端、所述电阻R1的一端连接，所述运算放大器OP3的反向输入端分别与所述电容C3的另一端、所述电阻R1的另一端和所述比较单元连接。相比于现有电感电流采样的斜坡补偿的技术方案，本发明利用MOS管工作在线性电阻区的特性，替代传统的RC电阻，使其在稳态和瞬态条件下产生不同的斜坡补偿特性，即实现了变换器在稳态下的稳定性，又在瞬态时利用反馈控制改变MOS的线性阻值，提高斜坡补偿能力，改善了迟滞控制变换器的瞬态特性，而且本发明电路结构简单，技术操作容易，成本更低。In an embodiment of the present application, the compensation unit and the processing unit are connected to the input unit and the comparison unit respectively; wherein the compensation unit includes a MOS tube M3, a MOS tube M4, a MOS tube M5, an operational amplifier OP3, a capacitor C2, a capacitor C3, an inductor L and a resistor R1; the drain terminal and the gate terminal of the MOS tube M3 are respectively connected to the input unit, the gate terminal of the MOS tube M3 is respectively connected to the gate terminal of the MOS tube M4, the output terminal of the operational amplifier OP3 and the positive input terminal of the operational amplifier OP3, and the The source end of the MOS tube M3 is respectively connected to the gate end and the drain end of the MOS tube M5, the drain end of the MOS tube M4, one end of the inductor L and the input unit, the source end of the MOS tube M4 is respectively connected to one end of the capacitor C2 and one end of the capacitor C3, the source end of the MOS tube M5 is connected to the other end of the capacitor C2, the other end of the inductor L, and one end of the resistor R1, and the reverse input end of the operational amplifier OP3 is respectively connected to the other end of the capacitor C3, the other end of the resistor R1 and the comparison unit. Compared with the existing technical solution of slope compensation for inductor current sampling, the present invention utilizes the characteristic of MOS tube working in the linear resistance region to replace the traditional RC resistor, so that it produces different slope compensation characteristics under steady-state and transient conditions, that is, the stability of the converter in steady state is achieved, and the linear resistance of MOS is changed by feedback control in transient state, so as to improve the slope compensation capability and improve the transient characteristics of the hysteresis control converter. In addition, the present invention has a simple circuit structure, easy technical operation and lower cost.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
为了更清楚地说明本申请的技术方案，下面将对本申请的描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solution of the present application, the drawings required for use in the description of the present application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.
图1是本申请一实施例提供的现有技术的带有斜坡补偿电路的迟滞控制模式变换器的结构示意图；FIG1 is a schematic structural diagram of a hysteresis control mode converter with a slope compensation circuit according to a prior art embodiment of the present application;
图2是本申请另一实施例提供的现有技术的带有斜坡补偿电路的迟滞控制模式变换器的结构示意图；2 is a schematic structural diagram of a hysteresis control mode converter with a slope compensation circuit according to the prior art provided by another embodiment of the present application;
图3是本申请一实施例提供的一种增强瞬态特性的自适应迟滞控制变换器的结构示意图；3 is a schematic diagram of the structure of an adaptive hysteresis control converter with enhanced transient characteristics provided by an embodiment of the present application;
图4是本申请一实施例提供的变换器中输出纹波叠加过程示意图。FIG. 4 is a schematic diagram of an output ripple superposition process in a converter provided in an embodiment of the present application.
具体实施方式DETAILED DESCRIPTION
为使本申请的所述目的、特征和优点能够更加明显易懂，下面结合附图和具体实施方式对本申请作进一步详细的说明。显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。In order to make the objects, features and advantages of the present application more obvious and understandable, the present application is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. Obviously, the described embodiments are part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.
需要说明的是，在本发明任一实施例中，Buck变换器为降压型开关变换器；MOS为金属氧化物半导体场效应晶体管；VFB为反馈电压；FB为变换器的反馈节点；Fs为变换器的开关频率；Cout为输出电容；Resr为输出电容的等效内阻抗；Scomp为补偿强度；SW为变换器的开关节点；VGS为MOS管栅源间的电压；VDS为MOS管漏源间的电压；VTH为MOS管栅端的阈值电压；OP为运算放大器；COMP为比较器；BST为自举升压节点，分别为MOS管M1、MOS管M3、MOS管M4和MOS管M5提供供电电压。It should be noted that, in any embodiment of the present invention, the Buck converter is a step-down switching converter; MOS is a metal oxide semiconductor field effect transistor; V FB is a feedback voltage; FB is a feedback node of the converter; Fs is a switching frequency of the converter; C out is an output capacitor; Resr is an equivalent internal impedance of the output capacitor; Scomp is a compensation strength; SW is a switching node of the converter; V GS is a voltage between the gate and source of the MOS tube; V DS is a voltage between the drain and source of the MOS tube; V TH is a threshold voltage of the gate terminal of the MOS tube; OP is an operational amplifier; COMP is a comparator; BST is a bootstrap boost node, which provides a power supply voltage for MOS tube M1, MOS tube M3, MOS tube M4 and MOS tube M5 respectively.
参照图3，示出了本申请一实施例提供的一种增强瞬态特性的自适应迟滞控制变换器，所述变换器用于将输入电能变换成负载所需的电压或电流可控的电能，包括补偿单元，输入单元，处理单元和比较单元，所述补偿单元和所述处理单元分别与所述输入单元和比较单元连接；3 , an adaptive hysteresis control converter with enhanced transient characteristics provided by an embodiment of the present application is shown, wherein the converter is used to convert input electric energy into voltage or current controllable electric energy required by a load, and comprises a compensation unit, an input unit, a processing unit and a comparison unit, wherein the compensation unit and the processing unit are connected to the input unit and the comparison unit respectively;
其中，所述补偿单元包括，MOS管M3、MOS管M4、MOS管M5、运算放大器OP3、电容C2、电容C3、电感L和电阻R1；The compensation unit includes a MOS tube M3, a MOS tube M4, a MOS tube M5, an operational amplifier OP3, a capacitor C2, a capacitor C3, an inductor L and a resistor R1;
所述MOS管M3漏端及栅端分别与输入单元连接，The drain terminal and gate terminal of the MOS tube M3 are respectively connected to the input unit.
所述MOS管M3的栅端分别与所述MOS管M4的栅端、所述运算放大器OP3的输出端和所述运算放大器OP3的正向输入端连接，The gate end of the MOS tube M3 is respectively connected to the gate end of the MOS tube M4, the output end of the operational amplifier OP3 and the positive input end of the operational amplifier OP3.
所述MOS管M3的源端分别与所述MOS管M5的栅端及漏端、所述MOS管M4的漏端、所述电感L的一端和所述输入单元连接，The source end of the MOS tube M3 is respectively connected to the gate end and the drain end of the MOS tube M5, the drain end of the MOS tube M4, one end of the inductor L and the input unit.
所述MOS管M4的源端分别与所述电容C2的一端和所述电容C3的一端连接，The source end of the MOS tube M4 is connected to one end of the capacitor C2 and one end of the capacitor C3 respectively.
所述MOS管M5的源端与所述电容C2另一端、所述电感L的另一端、所述电阻R1的一端连接，The source end of the MOS tube M5 is connected to the other end of the capacitor C2, the other end of the inductor L, and one end of the resistor R1.
所述运算放大器OP3的反向输入端分别与所述电容C3的另一端、所述电阻R1的另一端和所述比较单元连接。The inverting input terminal of the operational amplifier OP3 is respectively connected to the other end of the capacitor C3 , the other end of the resistor R1 , and the comparison unit.
本申请具有以下优点：This application has the following advantages:
在本申请的实施例中，所述补偿单元和所述处理单元分别与所述输入单元和比较单元连接；其中，所述补偿单元包括，MOS管M3、MOS管M4、MOS管M5、运算放大器OP3、电容C2、电容C3、电感L和电阻R1；所述MOS管M3漏端及栅端分别与输入单元连接，所述MOS管M3的栅端分别与所述MOS管M4的栅端、所述运算放大器OP3的输出端和所述运算放大器OP3的正向输入端连接，所述MOS管M3的源端分别与所述MOS管M5的栅端及漏端、所述MOS管M4的漏端、所述电感L的一端和所述输入单元连接，所述MOS管M4的源端分别与所述电容C2的一端和所述电容C3的一端连接，所述MOS管M5的源端与所述电容C2另一端、所述电感L的另一端、所述电阻R1的一端连接，所述运算放大器OP3的反向输入端分别与所述电容C3的另一端、所述电阻R1的另一端和所述比较单元连接。相比于现有电感电流采样的斜坡补偿的技术方案，本发明利用MOS管工作在线性电阻区的特性，替代传统的RC电阻，使其在稳态和瞬态条件下产生不同的斜坡补偿特性，即实现了变换器在稳态下的稳定性，又在瞬态时利用反馈控制改变MOS的线性阻值，提高斜坡补偿能力，改善了迟滞控制变换器的瞬态特性，而且本发明电路结构简单，技术操作容易，成本更低。In an embodiment of the present application, the compensation unit and the processing unit are connected to the input unit and the comparison unit respectively; wherein the compensation unit includes a MOS tube M3, a MOS tube M4, a MOS tube M5, an operational amplifier OP3, a capacitor C2, a capacitor C3, an inductor L and a resistor R1; the drain terminal and the gate terminal of the MOS tube M3 are respectively connected to the input unit, the gate terminal of the MOS tube M3 is respectively connected to the gate terminal of the MOS tube M4, the output terminal of the operational amplifier OP3 and the positive input terminal of the operational amplifier OP3, and the The source end of the MOS tube M3 is respectively connected to the gate end and the drain end of the MOS tube M5, the drain end of the MOS tube M4, one end of the inductor L and the input unit, the source end of the MOS tube M4 is respectively connected to one end of the capacitor C2 and one end of the capacitor C3, the source end of the MOS tube M5 is connected to the other end of the capacitor C2, the other end of the inductor L, and one end of the resistor R1, and the reverse input end of the operational amplifier OP3 is respectively connected to the other end of the capacitor C3, the other end of the resistor R1 and the comparison unit. Compared with the existing technical solution of slope compensation for inductor current sampling, the present invention utilizes the characteristic of MOS tube working in the linear resistance region to replace the traditional RC resistor, so that it produces different slope compensation characteristics under steady-state and transient conditions, that is, the stability of the converter in steady state is achieved, and the linear resistance of MOS is changed by feedback control in transient state, so as to improve the slope compensation capability and improve the transient characteristics of the hysteresis control converter. In addition, the present invention has a simple circuit structure, easy technical operation and lower cost.
下面，将对本示例性实施例中物流路径的估测方法作进一步地说明Next, the method for estimating the logistics path in this exemplary embodiment will be further described.
具体地，自适应迟滞控制变换器本质上是一种纹波反馈控制的拓扑，具体参照图3所示。Specifically, the adaptive hysteresis control converter is essentially a ripple feedback control topology, as shown in FIG. 3 .
从电气特性的角度来看，反馈纹波可表示为：From the perspective of electrical characteristics, the feedback ripple can be expressed as:
因为VFBH-VFBL为近似定值，所以△VFB的峰峰值近似为定值。因此，当输出电容只采用陶瓷电容时，其Rser较小，导致开关频率Fs也较小，因而在较低频率的情况下瞬态响应会较差。为了改善该问题，传统迟滞控制变换器会引入电感电流采样的斜坡补偿电路来增加FB的电压纹波斜率，进而提高开关频率来实现更好的瞬态响应，其做法如图1、2所示，通过采样电感L两端或SW到FB之间的电压差，本质上是通过电压表示电流的伪电流检测方式，R3、C2串联实现对电容的恒流充放电，从而产生斜坡电压信号△Vripple，将该信号同R1、R2分压得到的输出纹波△Vout*[R2/(R1+R2)]进行叠加，以提高△VFB的纹波斜率，从而增加Fs，实现更好的瞬态响应，该叠加过程如图4所示。Because VFBH-VFBL is an approximate constant, the peak-to-peak value of △VFB is approximately a constant. Therefore, when the output capacitor uses only ceramic capacitors, its Rser is small, resulting in a small switching frequency Fs, so the transient response will be poor at lower frequencies. In order to improve this problem, the traditional hysteresis control converter will introduce a slope compensation circuit for inductor current sampling to increase the voltage ripple slope of FB, thereby increasing the switching frequency to achieve better transient response. The method is shown in Figures 1 and 2. By sampling the voltage difference between the two ends of the inductor L or between SW and FB, it is essentially a pseudo-current detection method that represents current by voltage. R3 and C2 are connected in series to realize constant current charging and discharging of the capacitor, thereby generating a ramp voltage signal △Vripple. This signal is superimposed with the output ripple △Vout*[R2/(R1+R2)] obtained by the voltage division of R1 and R2 to increase the ripple slope of △VFB, thereby increasing Fs and achieving better transient response. The superposition process is shown in Figure 4.
根据电容充放电特性，斜坡补偿强度Scomp∝1/RC，但补偿强度的增加会直接影响环路稳定性，即在过补偿的情况下难以保证变换器的工作稳定性，因此传统的RC斜坡补偿对于瞬态响应的改善是存在很大限制的。该发明相较于传统的电感电流采用的斜坡补偿方式，在保证电路工作稳定的条件下，最大限度的增强了瞬态特性。According to the charging and discharging characteristics of the capacitor, the slope compensation strength Scomp∝1/RC, but the increase in compensation strength will directly affect the loop stability, that is, it is difficult to ensure the working stability of the converter under over-compensation. Therefore, the improvement of transient response by traditional RC slope compensation is greatly limited. Compared with the traditional slope compensation method used for inductive current, this invention maximizes the transient characteristics while ensuring the stability of the circuit.
进一步地，所述输入单元包括二极管D1、MOS管M1、MOS管M2、电容C1和缓冲器Buffer；Furthermore, the input unit includes a diode D1, a MOS tube M1, a MOS tube M2, a capacitor C1 and a buffer Buffer;
所述缓冲器Buffer分别与所述MOS管M1的栅端和漏端、所述MOS管M2的栅端、所述处理单元、所述二极管D1的输入端和输入电源的正极连接；The buffer Buffer is respectively connected to the gate terminal and the drain terminal of the MOS tube M1, the gate terminal of the MOS tube M2, the processing unit, the input terminal of the diode D1 and the positive electrode of the input power supply;
所述MOS管M1的漏端与所述二极管D1的输入端连接；所述MOS管M1的源端分别与所述MOS管M2的漏端、所述电容C1的另一端、所述电感L的一端连接；The drain end of the MOS tube M1 is connected to the input end of the diode D1; the source end of the MOS tube M1 is respectively connected to the drain end of the MOS tube M2, the other end of the capacitor C1, and one end of the inductor L;
所述二极管D1的输出端分别与所述MOS管M3的漏端和栅端以及所述电容C1的一端连接；The output end of the diode D1 is respectively connected to the drain end and the gate end of the MOS tube M3 and one end of the capacitor C1;
所述MOS管M2的源端接地。The source end of the MOS tube M2 is grounded.
进一步地，所述比较单元包括比较器COMP1和比较器COMP2；Further, the comparison unit includes a comparator COMP1 and a comparator COMP2;
所述比较器COMP1的输出端与所述处理单元连接；所述比较器COMP1的正向输入端与所述电阻R1的另一端连接；所述比较器COMP1的反向输入端与比较电压VFBH的输入端连接；The output end of the comparator COMP1 is connected to the processing unit; the positive input end of the comparator COMP1 is connected to the other end of the resistor R1; the negative input end of the comparator COMP1 is connected to the input end of the comparison voltage VFBH;
所述比较器COMP2的输出端与所述处理单元连接；所述比较器COMP1的反向输入端与所述电阻R1的另一端连接；所述比较器COMP2的正向输入端与比较电压VFBL的输入端连接。The output end of the comparator COMP2 is connected to the processing unit; the inverting input end of the comparator COMP1 is connected to the other end of the resistor R1; and the positive input end of the comparator COMP2 is connected to the input end of the comparison voltage VFBL.
进一步地，所述MOS管M3、所述MOS管M4和所述MOS管M5以构成钳位两管分裂串联的方式连接，其中，所述MOS管M5为钳位MOS管。Further, the MOS transistor M3, the MOS transistor M4 and the MOS transistor M5 are connected in a manner of forming a clamped two-tube split series connection, wherein the MOS transistor M5 is a clamped MOS transistor.
进一步地，所述MOS管M4的线性阻值处于VDS4＜VGS3-VTH3的线性电阻区；其中，VGS3为MOS管M3栅源间的电压；VDS4为MOS管M4漏源间的电压；VTH3为MOS管M3栅端的阈值电压。Furthermore, the linear resistance of the MOS tube M4 is in the linear resistance region of V DS4 <V GS3 -V TH3 ; wherein V GS3 is the gate-source voltage of the MOS tube M3; V DS4 is the drain-source voltage of the MOS tube M4; and V TH3 is the threshold voltage of the gate terminal of the MOS tube M3.
参照图3，本发明将传统RC补偿中的电阻R3用MOS管M4替代，使M4与C2构成新型的RC补偿电路。M3、M4、M5构成钳位分裂串联结构，该结构原理如下：Referring to FIG3 , the present invention replaces the resistor R3 in the traditional RC compensation with a MOS tube M4, so that M4 and C2 form a new RC compensation circuit. M3, M4, and M5 form a clamped split series structure, and the structural principle is as follows:
在保证工作该结构工作电压正常的情况下，M3的连接方式决定了无条件满足饱和条件，根据MOS管数学模型，M3、M4一定满足以下关系：Under the condition that the working voltage of the structure is normal, the connection mode of M3 determines that the saturation condition is met unconditionally. According to the mathematical model of MOS tube, M3 and M4 must satisfy the following relationship:
(VGS4-VTH4)-VDS4＝(VGS3+VDS4-VTH4)-VDS4＝VDS3-VTH4 (V GS4 -V TH4 )-V DS4 = (V GS3 +V DS4 -V TH4 )-V DS4 =V DS3 -V TH4
由于M3的衬偏效应，使得VTH3≥VTH4，又因为M3饱和导通有VGS3-VTH3＞0，所以Due to the bias effect of M3, VTH3 ≥ VTH4. Since M3 is saturated and turned on, VGS3-VTH3>0.
VTH3+VGS3-VTH3-VTH4≥VGS3-VTH3＞0VTH3+VGS3-VTH3-VTH4≥VGS3-VTH3>0
显然，需要满足M4进入线性电阻区以降低电流来满足电流连续的条件，因此M4一定处于VDS4＜VGS3-VTH3的线性电阻区。Obviously, M4 needs to enter the linear resistance region to reduce the current to meet the current continuity condition, so M4 must be in the linear resistance region of VDS4＜VGS3-VTH3.
M5为钳位MOS管，并联于M4处.M5采用二极管连接方式，保证足够工作电压的情况下，M5不会进入截止状态而一定就处于饱和状态，相比于工作在线性区的M4，I5>>I4，实现了分流作用，即保证了M4管始终处于线性电阻区，又保证流经M4的电流不会过大，导致过补偿或者C2电容取值过大的情况。M5 is a clamping MOS tube, connected in parallel with M4. M5 adopts a diode connection method to ensure that under sufficient working voltage, M5 will not enter the cut-off state but will be in a saturation state. Compared with M4 working in the linear region, I5>>I4, realizing the shunt effect, that is, ensuring that the M4 tube is always in the linear resistance region, and ensuring that the current flowing through M4 will not be too large, resulting in over-compensation or excessive value of C2 capacitance.
该结构将BST作为高电平，保证有足够高的电压使M3、M5始终工作在饱和区，从而实现M4始终工作在线性电阻区。由于电感L两端电压在小信号条件下仅与频率相关，瞬态变化瞬间频率近似恒定，因此电感L两端电压近似恒定，所以M4的小信号阻抗仅由其栅端信号控制，M4的栅端同运放OP3的输出端相连，通过OP3从FB处采样电压变换并快速反馈至M4栅端，控制其线性阻值。This structure uses BST as a high level to ensure that there is a high enough voltage to make M3 and M5 always work in the saturation region, so that M4 always works in the linear resistance region. Since the voltage across the inductor L is only related to the frequency under small signal conditions, the frequency of transient changes is approximately constant, so the voltage across the inductor L is approximately constant, so the small signal impedance of M4 is only controlled by its gate signal. The gate of M4 is connected to the output of the operational amplifier OP3, and the voltage is sampled from FB through OP3 and quickly fed back to the gate of M4 to control its linear resistance.
进一步地，所述MOS管M5的源端还通过输出电容Cout接地。Furthermore, the source end of the MOS tube M5 is also grounded through an output capacitor Cout.
进一步地，所述运算放大器OP3的反向输入端通过电阻R2接地。Furthermore, the inverting input terminal of the operational amplifier OP3 is grounded through the resistor R2.
一种的增强瞬态特性的自适应迟滞控制变换器的控制方法，A control method for an adaptive hysteresis control converter with enhanced transient characteristics,
当负载稳定时，保持所述MOS管M4的线性阻值不变。When the load is stable, the linear resistance of the MOS tube M4 is kept unchanged.
具体地，当负载稳定时，FB处的反馈电压在VFBL与VBFH之间近似稳定，此时M4的线性阻值近似保持不变，M4与C2构成的补偿电路可满足稳态下的电路稳定要求。Specifically, when the load is stable, the feedback voltage at FB is approximately stable between VFBL and VBFH, at which time the linear resistance of M4 remains approximately unchanged, and the compensation circuit formed by M4 and C2 can meet the circuit stability requirement in the steady state.
在本发明一实施例中，当负载从轻载转重载时，降低所述MOS管M4的线性阻值。In one embodiment of the present invention, when the load changes from light load to heavy load, the linear resistance of the MOS tube M4 is reduced.
具体地，当负载从轻载转重载时，Vout会形成下冲电压，通过电阻R1、电阻R2分压使FB处的反馈电压瞬间拉低，此时运算放大器OP3快速采样并迅速拉高运放的输出。通过MOS工作在线性区的工作模型可知，Specifically, when the load changes from light load to heavy load, V out will form an undershoot voltage, and the feedback voltage at FB will be instantly lowered through the voltage division of resistors R1 and R2. At this time, the operational amplifier OP3 quickly samples and quickly pulls up the output of the operational amplifier. It can be seen from the working model of MOS working in the linear region that
当运算放大器OP3输出增加时，MOS管M4的VGS4会增加，因此其线性阻值Rds4会减小，依据斜坡补偿强度与RC之间的关系，相比于稳态，其瞬态斜坡补偿强度大大增加了，其瞬态特性也进一步提高。When the output of the operational amplifier OP3 increases, the V GS4 of the MOS tube M4 will increase, so its linear resistance R ds4 will decrease. According to the relationship between the slope compensation strength and RC, compared with the steady state, its transient slope compensation strength is greatly increased, and its transient characteristics are further improved.
综上可以看出：本发明所提出的增强瞬态特性的自适应迟滞控制变换器的技术优点：利用MOS管工作在线性电阻区的特性，替代传统的RC电阻，使其在稳态和瞬态条件下产生不同的斜坡补偿特性，即满足了变换器在稳态下的稳定性，又在瞬态时利用反馈控制改变MOS的线性阻值，提高斜坡补偿能力，大大改善了迟滞控制变换器的瞬态特性。In summary, it can be seen that the technical advantages of the adaptive hysteresis control converter with enhanced transient characteristics proposed in the present invention are: the characteristic of MOS tube working in the linear resistance region is utilized to replace the traditional RC resistor, so that it can produce different slope compensation characteristics under steady-state and transient conditions, that is, the stability of the converter in the steady state is satisfied, and the linear resistance value of MOS is changed by feedback control in the transient state to improve the slope compensation capability, which greatly improves the transient characteristics of the hysteresis control converter.
一种设备，包括如上述实施例任意一项所述的增强瞬态特性的自适应迟滞控制变换器。A device comprises the adaptive hysteresis control converter with enhanced transient characteristics as described in any one of the above embodiments.
尽管已描述了本申请实施例的优选实施例，但本领域内的技术人员一旦得知了基本创造性概念，则可对这些实施例做出另外的变更和修改。所以，所附权利要求意欲解释为包括优选实施例以及落入本申请实施例范围的所有变更和修改。Although the preferred embodiments of the present application have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the embodiments of the present application.
最后，还需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者终端设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者终端设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者终端设备中还存在另外的相同要素。Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or terminal device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or terminal device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or terminal device including the elements.
以上对本申请所提供的增强瞬态特性的自适应迟滞控制变换器、控制方法及设备，进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的一般技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。The above is a detailed introduction to the adaptive hysteresis control converter, control method and device with enhanced transient characteristics provided by the present application. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for general technical personnel in this field, according to the idea of the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.
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