CN111900109A - CMP cleaning and drying device - Google Patents

Abstract

The application relates to the technical field of semiconductor manufacturing, in particular to a CMP cleaning and drying device. The CMP cleaning and drying device comprises: the cleaning cavity comprises a first side wall and an inclined second side wall, a sheet feeding channel is formed along the first side wall, a sheet discharging channel is formed along the second side wall, and the sheet feeding channel and the sheet discharging channel are intersected at the bottom end of the cleaning cavity; the drying cavity is positioned at the upper end of the sheet outlet channel, the drying cavity forms an inlet and an outlet, and the inlet is communicated with the sheet outlet channel; the rotary receiving device is arranged at the intersection of the wafer feeding channel and the wafer discharging channel and is used for driving the wafer to be turned from the wafer feeding channel to the wafer discharging channel; and the deionized water spray head is arranged on the wafer inlet channel and the wafer outlet channel. The application provides a CMP washs drying device can solve the problem that the resistance that produces because of the deionized water is undulant among the correlation technique causes the wafer fragment.

Description

CMP cleaning and drying device

technical field

The present application relates to the technical field of semiconductor manufacturing, and in particular, to a CMP cleaning and drying device.

Background technique

In the semiconductor integrated circuit manufacturing process, after the wafer surface is planarized by the chemical mechanical polishing (Chemical Mechanical Planarization, CMP) step, a series of cleaning steps are required to remove impurities such as polishing liquid or particles remaining on the wafer surface during the polishing process. , in order to ensure the quality of the wafer in the subsequent manufacturing process.

The cleaning and drying steps commonly used in the related art include: immersing the polished and ground wafer in deionized water, moving in the deionized water to remove impurities on the surface of the wafer, and finally entering a drying chamber for drying.

However, deionized water will fluctuate due to operations such as adding liquid externally, and the fluctuation of deionized water will cause resistance to the wafer immersed in it. Under the action of this resistance, the wafer is easily broken.

SUMMARY OF THE INVENTION

The present application provides a CMP cleaning and drying device, which can solve the problem of wafer fragmentation caused by resistance caused by fluctuation of deionized water in the related art.

The application provides a CMP cleaning and drying device, the CMP cleaning and drying device includes:

a cleaning chamber, the cleaning chamber includes a first side wall and a second inclined side wall, a sheet feeding channel is formed along the first side wall, and a sheet feeding channel is formed along the second side wall, and the sheet feeding channel is formed along the second side wall. The channel and the film output channel meet at the bottom end of the cleaning cavity;

a drying cavity, the drying cavity is located at the upper end of the tablet output channel, the drying chamber forms an inlet and an outlet, and the inlet is communicated with the tablet output channel;

a rotating receiving device, the rotating receiving device is arranged at the intersection of the wafer feeding channel and the wafer outputting channel, and is used for driving the wafers from the wafer feeding channel to the wafer outputting channel;

A deionized water shower head, the deionized water shower head is arranged on the sheet feeding channel and the sheet outputting channel.

Optionally, the deionized water shower head includes:

a chip feeding shower head, which is arranged at intervals on the first side wall along the chip feeding channel;

The tablet ejection shower head is arranged at intervals on the second side wall along the tablet ejection channel.

Optionally, a pair of wafer-feeding shower heads are arranged at the entrance of the wafer-feeding channel, and the pair of wafer-feeding shower heads can spray the front and back surfaces of the wafers respectively.

Optionally, the sheet feeding shower head sprays deionized water toward the front of the sheet feeding direction.

Optionally, a pair of wafer ejection shower heads are arranged at the exit of the wafer ejection channel, and the pair of wafer ejection shower heads can spray the front and back surfaces of the wafers respectively.

Optionally, the chip ejection shower head sprays deionized water toward the rear of the chip ejection direction.

Optionally, a rotation space is formed between the film feeding channel and the film outputting channel;

Driven by the rotation receiving device, the wafer takes the rotation receiving device as the origin, and rotates from the position of the wafer feeding channel, passes through the rotation space, and enters the position of the wafer output channel.

Optionally, the rotation space is fan-shaped.

The technical solution of the present application includes at least the following advantages: in the CMP cleaning and drying device provided by the present application, when cleaning and drying the wafer surface, the wafer enters the wafer feeding channel from the entrance of the wafer feeding channel 113 until it reaches the position of the rotation receiving device In the wafer feeding channel, the deionized water shower head sprays deionized water to the surface of the wafer 200 to remove impurities on the wafer surface. The rotating receiving device drives the wafer to rotate to the state of the wafer output channel. During the movement of the wafer output channel, the deionized water spray head sprays deionized water to the wafer surface to remove impurities on the wafer surface. After cleaning, deionized water is formed on the surface of the wafer. The film then enters the drying process. The CMP cleaning and drying device provided in the present application can prevent the wafer surface from being affected by unstable external forces, which greatly reduces the risk of wafer fragmentation.

Description of drawings

In order to more clearly illustrate the specific embodiments of the present application or the technical solutions in the prior art, the accompanying drawings that need to be used in the description of the specific embodiments or the prior art will be briefly introduced below. The drawings are some embodiments of the present application. For those of ordinary skill in the art, other drawings can also be obtained from these drawings without any creative effort.

Fig. 1 is a longitudinal cross-sectional structural schematic diagram of a CMP cleaning and drying device provided by an embodiment of the present application;

2 is a schematic diagram of a wafer entering a cleaning chamber of a CMP cleaning and drying device provided by an embodiment of the present application;

3 is a schematic diagram of the CMP cleaning and drying device provided by the embodiment of the present application when the rotating receiving device receives the wafer;

4 is a schematic diagram of the CMP cleaning and drying device provided by the embodiment of the present application when the rotation receiving device drives the wafer to rotate to the state of the wafer discharge channel;

5 is a schematic diagram of a wafer entering a drying chamber of a CMP cleaning and drying device provided by an embodiment of the present application;

6 is a cross-sectional structural schematic diagram of a CMP cleaning and drying device provided by another embodiment of the present application;

FIG. 7 is a schematic view of the cross-sectional structure of A-A in FIG. 6 .

Detailed ways

The technical solutions in the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.

In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the indicated device or element must have a specific orientation or a specific orientation. construction and operation, and therefore should not be construed as limiting the application. Furthermore, the terms "first", "second", and "third" are used for descriptive purposes only and should not be construed to indicate or imply relative importance.

In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection connection, or integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, or it can be the internal connection of two components, which can be a wireless connection or a wired connection connect. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood in specific situations.

In addition, the technical features involved in the different embodiments of the present application described below can be combined with each other as long as there is no conflict with each other.

Referring to FIG. 1 , it illustrates a CMP cleaning and drying device provided by an embodiment of the present application. The CMP cleaning and drying device includes:

The cleaning chamber 110 includes a first side wall 111 and a second inclined side wall 112 , a wafer feeding channel 113 is formed along the first side wall 111 , and a wafer output channel 114 is formed along the second side wall 112 , the film feeding channel 113 and the film outputting channel 114 meet at the bottom end of the cleaning cavity 110;

a drying cavity 120, the drying cavity 120 is located at the upper end of the film output channel 114, the drying cavity 120 forms an inlet and an outlet, and the inlet of the drying cavity 120 is communicated with the film output channel 114;

a rotation receiving device 130, the rotating receiving device 130 is arranged at the intersection of the wafer feeding channel 113 and the wafer outputting channel 114, and is used to drive the wafer 200 from the wafer feeding channel 113 to the wafer outputting channel 114;

A deionized water shower head, the deionized water shower head is arranged on the sheet feeding channel 113 and the sheet outputting channel 114 .

During cleaning, FIG. 2 is a schematic diagram of the wafer entering the cleaning chamber of the CMP cleaning and drying apparatus provided in the embodiment of the present application. As shown in FIG. 2 , the wafer 200 can be brought from the cleaning chamber by a moving arm (not shown in the figure). The entrance of the wafer feeding channel 113 enters the wafer feeding channel 113 until it reaches the position of the rotating receiving device 130 , as shown in FIG. 3 . FIG. 3 shows the CMP cleaning and drying device provided in the embodiment of the present application when the rotating receiving device has a wafer. schematic diagram.

It should be explained that, in addition to driving the wafer 200 from the entrance of the wafer feeding channel 113 into the wafer feeding channel 113 through the above-mentioned moving arm, other existing moving devices can also be used to carry the wafer 200 from the entrance of the wafer feeding channel 113. Enter the film advance channel 113 .

In the wafer feeding channel 113 , the deionized water shower head sprays deionized water to the surface of the wafer 200 to remove impurities on the surface of the wafer 200 . FIG. 4 is a schematic diagram of the CMP cleaning and drying apparatus provided by the embodiment of the present application when the rotating receiving device drives the wafer to rotate to the state of the discharge channel. As shown in FIG. 4 , the rotating receiving device 130 clamps the wafer 200 and drives the wafer 200 from The wafer feed channel 113 turns to the wafer output channel 114 , and a moving device (not shown in the figure) drives the wafer 200 to move along the wafer output channel 114 . During the movement of the wafer 200 along the wafer output channel 114 , deionized water The shower head sprays deionized water to the surface of the wafer 200 to remove impurities on the surface of the wafer 200. After cleaning, a deionized water film is formed on the surface of the wafer 200, and then enters the drying process, as shown in Figure 5. Figure 5 shows the wafer entering The schematic diagram of the drying chamber of the CMP cleaning and drying device provided in the embodiment of the present application. During the drying process, the moving device (not shown in the figure) drives the wafer 200 to enter the drying chamber 120 from the wafer output channel 114 . In the drying chamber 120, the surface of the wafer 200 is sprayed with IPA through the IPA nozzle. The IPA (Iso Propyl Alcohol, isopropyl alcohol), the IPA drying utilizes the low surface tension and volatile properties of IPA to replace the surface of the wafer 200. The water with higher surface tension on the wafer 200 is then dried by nitrogen to achieve the purpose of thoroughly drying the water film on the surface of the wafer 200 .

As shown in Figures 1 to 5, the deionized water showerhead includes:

The chip feeding shower head 140 is arranged on the first side wall 111 at intervals along the chip feeding channel 113 .

The chip ejection shower head 150 is arranged at intervals on the second side wall 112 along the chip ejection channel 114 .

A pair of wafer-feeding shower heads 140 are disposed at the entrance of the wafer-feeding channel 113 , and the pair of wafer-feeding shower heads 140 can spray the front and back surfaces of the wafer 200 respectively. The wafer-feeding shower heads 140 Deionized water was sprayed toward the front of the sheet feeding direction, which is the direction A shown in FIG. 2 .

A pair of wafer ejection shower heads 150 are disposed at the exit of the wafer ejection channel 114 , and the pair of wafer ejection shower heads 150 can spray the front and back surfaces of the wafer 200 respectively. The wafer ejection shower heads 150 The deionized water was sprayed toward the back of the sheet ejection direction, which was reversed to the B direction shown in FIG. 2 .

During the process that the moving arm (not shown in the figure) takes the wafer 200 from the entrance of the feeding channel 113 into the feeding channel 113 until it reaches the position of the rotating and rotating receiving device 130 , a pair of The wafer feeding shower heads 140 are sprayed to the front and back of the wafer 200 respectively, and the wafer feeding shower heads 140 arranged at intervals on the first side wall 111 in the wafer feeding channel 113 are sprayed to the front surface of the wafer 200, During the movement of the wafer 200 along the wafer ejection channel 114 , the wafer ejection shower heads 150 arranged at intervals on the second side wall 112 are sprayed to the back of the wafer 200 , and pass through a pair of wafer ejection sprays at the exit of the wafer ejection channel 114 . The shower heads 150 are sprayed onto the front and back surfaces of the wafers 200 respectively, so as to enter the drying chamber 120 .

A rotation space 115 is formed between the wafer feeding channel 113 and the wafer output channel 114 ; as shown in FIG. 3 and FIG. The receiving device 130 is the origin, and from the position of the film feeding channel 113 , it rotates through the rotation space 115 and enters the position of the film output channel 114 . In order to enable the wafer to be better rotated under the driving of the rotation receiving device 130 , the rotation space 115 is fan-shaped. It should be explained that, in order to realize that after the wafer 200 rotates through the rotation space 115 and enters the wafer output channel 114 position, the rotation receiving device 130 can be designed to be able to move up and down, for example, it can be installed under the rotation receiving device 130 A moving cylinder (not shown in the figure); when the moving cylinder rises, the rotating receiving device 130 drives the wafer to move upward into the wafer output channel 114 .

In the rotation space 115 , the wafer 200 is driven by the rotation receiving device 130 and takes the rotation receiving device 130 as the origin, and rotates through the rotation space 115 from the position of the wafer feeding channel 113 . During this process, the surface of the wafer 200 will not be affected by other unstable external forces such as deionized water, which greatly reduces the risk of the wafer 200 being broken.

6 is a schematic cross-sectional structural diagram of a CMP cleaning and drying apparatus provided by another embodiment of the present application on the basis of any of the structures shown in FIGS. 1 to 5 . FIG. 7 is a schematic cross-sectional view of FIG. 6A-A.

6 and 7, the first side wall 111 and the inclined second side wall 112 are respectively provided with a flow channel 160, and the flow channel 160 is respectively connected with the first side wall 111 and the inclined second side wall 112. The deionized water shower head on 112 is in communication for supplying deionized water to the deionized water shower head through the flow channel.

Continuing to refer to FIGS. 6 and 7 , between the first side wall 111 and the inclined second side wall 112 is an adjusting rod 170 , the adjusting rod 170 can be rotated, and the adjusting rod 170 is close to the entrance of the film feeding channel 113 One side of the film feeding shower head 140 is arranged in a row, and the film feeding shower head 140 is used to spray the inlet of the film feeding channel 113 . Optionally, a chip discharge shower head 150 is provided on the side of the adjustment rod 170 near the exit of the chip discharge channel 114 , and the chip feed shower head 140 is used to spray the chip discharge channel 114 outlet. The adjusting rod 170 is also provided with a flow channel 160, and the flow channel 160 is respectively communicated with the chip feeding shower head 140 and the chip discharging shower head 150 arranged on the adjusting rod.

Obviously, the above-mentioned embodiments are only examples for clear description, and are not intended to limit the implementation manner. For those of ordinary skill in the art, changes or modifications in other different forms can also be made on the basis of the above description. There is no need and cannot be exhaustive of all implementations here. However, the obvious changes or changes derived from this are still within the scope of protection created by the present application.

Claims (8)

1. a CMP cleaning and drying device, wherein the CMP cleaning and drying device comprises: a cleaning chamber, the cleaning chamber includes a first side wall and a second inclined side wall, a sheet feeding channel is formed along the first side wall, and a sheet feeding channel is formed along the second side wall, and the sheet feeding channel is formed along the second side wall. The channel and the film output channel meet at the bottom end of the cleaning cavity; a drying cavity, the drying cavity is located at the upper end of the film output channel, the drying cavity forms an inlet and an outlet, and the inlet of the drying cavity is communicated with the film output channel; a rotating receiving device, the rotating receiving device is arranged at the intersection of the wafer feeding channel and the wafer outputting channel, and is used for driving the wafers from the wafer feeding channel to the wafer outputting channel; A deionized water shower head, the deionized water shower head is arranged on the sheet feeding channel and the sheet outputting channel. 2. CMP cleaning and drying device as claimed in claim 1, is characterized in that, described deionized water shower head comprises: a chip feeding shower head, which is arranged at intervals on the first side wall along the chip feeding channel; The tablet ejection shower head is arranged at intervals on the second side wall along the tablet ejection channel. 3. CMP cleaning and drying device as claimed in claim 1, is characterized in that, a pair of sheet feeding shower heads are set at the entrance of described sheet feeding passage, and described pair of sheet feeding shower heads can spray respectively to the front and back of the wafer. 4. The CMP cleaning and drying device according to claim 2 or 3, wherein the wafer feeding shower head sprays deionized water toward the front of the wafer feeding direction. 5. CMP cleaning and drying device as claimed in claim 1, is characterized in that, at the exit of described chip discharge channel, a pair of chip discharge shower heads are arranged, and described pair of chip discharge shower heads can be sprayed respectively to the front and back of the wafer. 6 . The CMP cleaning and drying device according to claim 2 or 5 , wherein the wafer ejection shower head sprays deionized water toward the rear of the wafer ejection direction. 7 . 7. CMP cleaning and drying device as claimed in claim 1, is characterized in that, between described sheet feeding passage and described sheet discharging passage, form a rotation space; Driven by the rotation receiving device, the wafer takes the rotation receiving device as the origin, and rotates from the position of the wafer feeding channel, passes through the rotation space, and enters the position of the wafer output channel. 8 . The CMP cleaning and drying device according to claim 7 , wherein the rotation space is fan-shaped. 9 .

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