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CN111876739B - Wide-surface rectangular cathode target with high utilization rate and method for improving utilization rate thereof - Google Patents

Wide-surface rectangular cathode target with high utilization rate and method for improving utilization rate thereof Download PDF

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CN111876739B
CN111876739B CN202010773225.6A CN202010773225A CN111876739B CN 111876739 B CN111876739 B CN 111876739B CN 202010773225 A CN202010773225 A CN 202010773225A CN 111876739 B CN111876739 B CN 111876739B
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magnet
target
wide
rectangular cathode
cathode target
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CN111876739A (en
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张斌
高凯雄
贾倩
张俊彦
强力
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Lanzhou Institute of Chemical Physics LICP of CAS
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation

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Abstract

本发明提供了一种宽面高利用率矩形阴极靶，包括软铁底板及设置在软铁底板上的中心磁钢，包围中心磁钢的同向多道环形磁钢。环形磁钢的磁场面与软铁底板呈10‑15°的倾角；最外环形跑道磁钢与中心磁钢等高，且由外向内环形跑道磁钢按照每道3㎜的阶梯降低；环形跑道磁钢的宽度由外向内逐渐变小。本发明设计的宽面矩形阴极靶的磁场布置可使平面溅射靶材的利用率到50%以上。将上述宽面矩形阴极靶在初次溅射使用后，将未溅射区域和已溅射区域靶材切割分离，未溅射区域按上述宽面矩形阴极靶的结构拼接后可以再次用作磁控溅射靶材，使靶材的利用率提高到80%以上，不仅提高了镀膜效率，而且极大的节约了资源。

Figure 202010773225

The invention provides a wide-surface high-utilization rectangular cathode target, which comprises a soft iron base plate, a central magnet steel arranged on the soft iron base plate, and multi-channel annular magnet steels in the same direction surrounding the central magnetic steel. The magnetic field surface of the ring magnet is at an inclination angle of 10-15° to the soft iron bottom plate; the outermost ring track magnet is the same height as the center magnet, and the ring track magnet is lowered in steps of 3mm from the outside to the inside; The width of the magnet gradually decreases from the outside to the inside. The magnetic field arrangement of the wide-surface rectangular cathode target designed by the present invention can make the utilization rate of the planar sputtering target material reach more than 50%. After the above-mentioned wide-face rectangular cathode target is used for the initial sputtering, the unsputtered area and the sputtered area target are cut and separated, and the unsputtered area can be used as a magnetron again after splicing according to the structure of the above-mentioned wide-face rectangular cathode target. The sputtering target increases the utilization rate of the target to more than 80%, which not only improves the coating efficiency, but also greatly saves resources.

Figure 202010773225

Description

Wide-surface rectangular cathode target with high utilization rate and method for improving utilization rate thereof
Technical Field
The invention relates to a rectangular cathode for magnetron sputtering and arc ion coating, in particular to a wide-surface rectangular cathode with high utilization rate.
Background
Along with the aggravation of energy and resource consumption, people gradually increase the consciousness of saving energy and resources, and novel anticorrosion and antifriction wear-resisting technologies continuously appear for reducing the consumption and waste of energy and resources. Surface treatment techniques such as electroplating, micro-arc oxidation, plasma spraying and the like are widely applied to the anticorrosion protection of materials and the reduction of friction coefficient.
Physical vapor deposition techniques, such as arc ion plating and magnetron sputtering, are increasingly widely regarded as pollution-free green surface treatment techniques and applied in large areas, compared with electroplating and micro-arc oxidation. However, the utilization rate of the traditional planar cathode target is only 30-40%, and the rest materials are treated as waste products, so that the resource loss is caused. How to further improve the utilization of planar cathodes is becoming a current technical challenge.
Disclosure of Invention
The invention aims to provide a wide-surface rectangular cathode target to improve the utilization rate of a planar cathode target.
Another object of the present invention is to provide a method for improving the utilization rate of the above-mentioned wide-faced rectangular cathode target.
A wide-face rectangular cathode target comprises a soft iron bottom plate, central magnetic steel arranged on the soft iron bottom plate, and annular runway magnetic steel surrounding the central magnetic steel, wherein the central magnetic steel and the annular runway magnetic steel are in different directions. That is, when the central magnetic steel is the N pole, the annular runway magnetic steel is the S pole, and when the central magnetic steel is the S pole, the outer annular runway magnetic steel is the N pole.
The magnetic field surface of the magnetic steel of the annular runway and the soft iron bottom plate form an inclination angle of 10-15 degrees. The inclination degree of the inclination angle is related to the actual width of the target surface, and the larger the width is, the smaller the inclination angle is, and the more favorable the efficient utilization of the cathode target material is.
The annular runway magnetic steel has a plurality of channels, namely a first annular runway magnetic steel, a second annular runway magnetic steel, a third annular runway magnetic steel and the like from inside to outside in sequence. The annular runway magnetic steels are all in the same direction (i.e. when the central magnetic steel is the N pole, all the annular runway magnetic steels are the S pole, and when the central magnetic steel is the S pole, all the outer ring runway magnetic steels are the N pole). The outermost annular runway magnetic steel and the central magnetic steel are equal in height, the annular runway magnetic steel from outside to inside is lowered according to each 3mm step, and the inclination angle between the magnetic field surface of the annular runway magnetic steel and the soft iron bottom plate is kept unchanged. The width of the annular runway magnetic steel is gradually reduced from outside to inside.
The central magnetic steel and the outermost annular magnetic steel are both neodymium iron boron or samarium cobalt strong magnetic steel. According to the requirement, the inner ring magnetic field can be neodymium iron boron or samarium cobalt strong magnetic steel or ferrite weak magnetic steel. The soft iron bottom plate and the magnetic steel are packaged in the aluminum alloy box body to ensure that the cathode target material is not in direct contact with water in the sputtering process.
The magnetic field arrangement of the wide-surface rectangular cathode target designed by the invention can enable the utilization rate of the planar sputtering target to reach more than 50%.
In order to further improve the utilization rate of the rectangular cathode target, after the rectangular cathode target with the wide surface is used for the first time in a sputtering mode, the targets in the non-sputtering area and the sputtering area are cut and separated, the non-sputtering area can be used as the magnetron sputtering target again after being spliced according to the structure of the rectangular cathode target with the wide surface, and the utilization rate of the target is improved to be more than 80%.
In conclusion, the invention not only improves the film coating efficiency, but also greatly saves resources by the arrangement mode of the magnetic steel and the arrangement method of the cathode target.
Drawings
FIG. 1 is a schematic structural view of a planar rectangular cathode target according to example 1 of the present invention.
FIG. 2 is a layout diagram of the annular magnetic steel of the rectangular cathode target of the embodiment 1 of the invention.
FIG. 3 is a schematic structural view of a rectangular planar cathode target according to example 2 of the present invention.
Fig. 4 is a schematic diagram of target design and secondary splicing utilization in embodiment 3 of the present invention.
Detailed Description
The following further describes embodiments of the present invention with reference to the drawings.
Example 1
As shown in fig. 1 and 2, the wide rectangular cathode target (the target width is 120 mm) includes a soft iron bottom plate and a central magnetic steel S (the width is 18 mm) disposed on the soft iron bottom plate, and two annular runway magnetic steels N are disposed outside the central magnetic steel S. Wherein the width of the outer ring magnetic steel N is 12 mm; the width of outer ring magnetic steel N is 8mm, and the interval between center magnetic steel S and inner ring magnetic steel N is 13.5 mm. The inclination angle between the magnetic field surface of the outer ring magnetic steel and the soft iron bottom plate is 15 degrees. The outer ring magnetic steel N and the central magnetic steel S are equal in height and are 35 mm. The height of the inner ring-shaped runway magnetic steel is 3mm lower than that of the outer ring magnetic steel, namely the height is 32 mm.
The magnetic field arrangement can improve the utilization rate of the planar sputtering target from the traditional 35% to more than 50%.
In order to improve the utilization rate of the rectangular cathode target, after the rectangular cathode target with the wide surface is used for the first sputtering, the target materials of the non-sputtered area and the sputtered area are cut and separated, and the non-sputtered area is not sputteredThe emitting area can be used as the magnetron sputtering target again after being spliced according to the structure of the wide-surface rectangular cathode target. As shown in fig. 4: when the target width is 120mm, the target splicing basic unit is designed to be 120x120mm2The effective sputtering width at this time was 35mm racetrack. The center is 30mm and the edge is a 12.5mm non-sputtered area. After being processed and cut, 2 targets with the width of 30mm and 5 targets with the width of 12mm are combined into 120x120mm2The target can be reused after rotating 90 degrees.
After the spliced sputtering target is reused, the utilization rate of the target is improved from 50% to more than 80%.
Example 2
As shown in fig. 2, the wide rectangular cathode target (target width is 150 mm) includes a soft iron bottom plate and a central magnetic steel S (width is 20mm, height is 20 mm) disposed on the soft iron bottom plate, three annular runway magnetic steels N are disposed outside the central magnetic steel S, and a first annular runway magnetic steel, a second annular runway magnetic steel, and a third annular runway magnetic steel are sequentially disposed from inside to outside. The width of the third annular runway magnetic steel N is 17mm, and the height of the third annular runway magnetic steel N is 20 mm; the width of the second annular runway magnetic steel N is 9mm, and the height of the second annular runway magnetic steel N is 17 mm; the width of first annular runway magnet steel N is 7mm, and the height is 14 mm. The distance between the central magnetic steel S and the first annular magnetic steel N is 14.5mm, and the distance between the first annular magnetic steel and the first annular magnetic steel is 13 mm. The inclination angles of the magnetic field surface of the first, second and third ring star magnetic steels and the soft iron bottom plate are all 12 degrees.
The magnetic field arrangement can improve the utilization rate of the planar sputtering target material to more than 50 percent.
In order to improve the utilization rate of the rectangular cathode target, after the rectangular cathode target with the wide surface is used for the first time in a sputtering mode, the targets in the non-sputtering area and the sputtering area are cut and separated, and the non-sputtering area can be used as the magnetron sputtering target again after being spliced according to the structure of the rectangular cathode target with the wide surface. As shown in particular in figure 3. When the target width is 150mm, for example, the target splicing basic unit is designed to be 150x150mm2The effective sputtering width at this time was 45mm racetrack. The center is 35mm and the edge is a 12.5mm non-sputtered area. After cutting, 3 targets with 30mm width and 5 targets with 12mm width are combined into 100x100mm2The target can be reused after rotating 90 degrees.
Example 3
As shown in fig. 3, the wide rectangular cathode target (the target width is 170 mm) includes a soft iron bottom plate and a central magnetic steel S (the width is 20mm, and the height is 20 mm) disposed on the soft iron bottom plate, three annular runway magnetic steels N are disposed outside the central magnetic steel S, and a first annular runway magnetic steel, a second annular runway magnetic steel, and a third annular runway magnetic steel are sequentially disposed from inside to outside. The width of the third annular runway magnetic steel N is 15mm, and the height of the third annular runway magnetic steel N is 20 mm; the width of the second annular runway magnetic steel N is 11mm, and the height of the second annular runway magnetic steel N is 17 mm; the width of first annular runway magnet steel N is 8mm, and the height is 14 mm. The distance between the central magnetic steel S and the first annular magnetic steel N is 15.5mm, and the distance between the first annular magnetic steel and the first annular magnetic steel is 13 mm. The inclination angles of the magnetic field surface of the first, second and third ring star magnetic steels and the soft iron bottom plate are both 15 degrees.
The magnetic field arrangement can improve the utilization rate of the planar sputtering target material to more than 50 percent.
In order to improve the utilization rate of the rectangular cathode target, after the rectangular cathode target with the wide surface is used for the first time in a sputtering mode, the targets in the non-sputtering area and the sputtering area are cut and separated, and the non-sputtering area can be used as the magnetron sputtering target again after being spliced according to the structure of the rectangular cathode target with the wide surface. As shown in particular in fig. 4. When the target width is 170mm, the basic unit of target splicing is designed to be 170x170mm2The effective sputtering width at this time was 50mm racetrack. The center is 40mm and the edge is a 15mm non-sputtered area. After cutting, 3 targets with a width of 40mm and 4 targets with a width of 12.5mm are combined into 170x170mm2The target can be reused after rotating 90 degrees.

Claims (4)

1.一种宽面矩形阴极靶，其特征在于：包括软铁底板及设置在软铁底板上的中心磁钢，包围中心磁钢的环形跑道磁钢，且中心磁钢与环形跑道磁钢为异向；所述环形跑道磁钢的磁场面与软铁底板呈10-15°的倾角；所述环形跑道磁钢有多道，且环形跑道磁钢均为同向，最外环形跑道磁钢与中心磁钢等高，且由外向内环形跑道磁钢按照每道3mm的阶梯降低，且保持环形跑道磁钢的磁场面与软铁底板的倾角不变。1. a wide-faced rectangular cathode target, is characterized in that: comprise the soft iron base plate and the center magnet steel that is arranged on the soft iron base plate, surround the annular track magnet steel of the center magnet steel, and the center magnet steel and the annular track magnet steel are Anisotropic; the magnetic field surface of the annular track magnet is at an inclination angle of 10-15° with the soft iron bottom plate; the annular track magnet has multiple tracks, and the annular track magnets are all in the same direction, and the outermost annular track magnet The height is the same as that of the center magnet, and the annular track magnet is lowered from the outside to the inside in steps of 3mm each, and the inclination of the magnetic field surface of the annular track magnet and the soft iron bottom plate remains unchanged. 2.如权利要求1所述一种宽面矩形阴极靶，其特征在于：环形跑道磁钢的宽度由外向内逐渐变小。2 . The wide-surface rectangular cathode target according to claim 1 , wherein the width of the annular track magnet gradually decreases from the outside to the inside. 3 . 3.如权利要求1所述一种宽面矩形阴极靶，其特征在于：中心磁钢和最外环形磁钢均为钕铁硼或钐钴强磁钢；内环磁钢为钕铁硼、钐钴强磁钢，或为铁氧体弱磁钢。3. a kind of wide-surface rectangular cathode target as claimed in claim 1, it is characterized in that: center magnet steel and outermost annular magnet steel are NdFeB or SmCo strong magnet; inner magnet steel is NdFeB, Samarium cobalt strong magnetic steel, or ferrite weak magnetic steel. 4.一种提高如权利要求1所述宽面矩形阴极靶利用率的方法，是将所述宽面矩形阴极靶在初次溅射使用后，将未溅射区域和已溅射区域靶材切割分离，未溅射区域按上述宽面矩形阴极靶的结构拼接后可以再次用作磁控溅射靶材。4. A method for improving the utilization rate of the wide-surface rectangular cathode target as claimed in claim 1 is to cut the non-sputtered area and the sputtered area target material after the broad-surface rectangular cathode target is used for the initial sputtering. After separation, the unsputtered area can be used as a magnetron sputtering target again after splicing according to the structure of the above-mentioned wide-surface rectangular cathode target.
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CN114908325A (en) * 2022-04-29 2022-08-16 宣城开盛新能源科技有限公司 A device and method for improving the uniformity of sputtering film thickness of planar cadmium sulfide target

Citations (6)

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Publication number Priority date Publication date Assignee Title
GB2058142A (en) * 1979-07-31 1981-04-08 Nordiko Ltd Sputtering electrodes
US6692619B1 (en) * 2001-08-14 2004-02-17 Seagate Technology Llc Sputtering target and method for making composite soft magnetic films
CN107083537A (en) * 2017-05-02 2017-08-22 霍尔果斯迅奇信息科技有限公司 New high target utilization ratio planar magnetic control sputtering cathode
CN108728808A (en) * 2017-05-09 2018-11-02 杭州朗为科技有限公司 A kind of rectangle magnetic control sputtering cathode of high target utilization ratio
CN110643966A (en) * 2019-11-14 2020-01-03 谢斌 Device and method for improving utilization rate of magnetron sputtering target
CN110714186A (en) * 2018-07-11 2020-01-21 君泰创新（北京）科技有限公司 Cathode body assembly, magnetron sputtering cathode and magnetron sputtering device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2058142A (en) * 1979-07-31 1981-04-08 Nordiko Ltd Sputtering electrodes
US6692619B1 (en) * 2001-08-14 2004-02-17 Seagate Technology Llc Sputtering target and method for making composite soft magnetic films
CN107083537A (en) * 2017-05-02 2017-08-22 霍尔果斯迅奇信息科技有限公司 New high target utilization ratio planar magnetic control sputtering cathode
CN108728808A (en) * 2017-05-09 2018-11-02 杭州朗为科技有限公司 A kind of rectangle magnetic control sputtering cathode of high target utilization ratio
CN110714186A (en) * 2018-07-11 2020-01-21 君泰创新（北京）科技有限公司 Cathode body assembly, magnetron sputtering cathode and magnetron sputtering device
CN110643966A (en) * 2019-11-14 2020-01-03 谢斌 Device and method for improving utilization rate of magnetron sputtering target

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