CN111835311A - Filter making method and filter - Google Patents

Abstract

The filter manufacturing method and filter provided by the present application relate to the technical field of wireless communication. Wherein, the filter manufacturing method includes: providing a substrate structure; fabricating and forming a circuit structure on at least one side of the substrate structure, wherein the circuit structure includes at least one circuit layer, and at least one circuit layer has at least one inductance element; A capacitor structure and/or a resonant structure are fabricated on the side of at least one circuit layer close to the substrate structure and/or the side away from the substrate structure, wherein the capacitor structure includes at least one capacitor element, and the resonant structure includes at least one acoustic resonator. Based on the above method, the problem of large integration size of the filter produced in the prior art can be improved.

Description

Filter making method and filter

technical field

The present application relates to the field of wireless communication technologies, and in particular, to a method for making a filter and a filter.

Background technique

In wireless radio frequency communication technology, the performance of radio frequency communication equipment directly affects the quality of wireless communication. Among them, in the radio frequency communication device, in order to effectively process the received signal and the signal to be sent, a corresponding filtering structure needs to be set.

The inventors have found that, in the existing filter structure manufacturing technology, the filter structure has a relatively large size due to the low integration degree of the filter structure, which limits its application range.

SUMMARY OF THE INVENTION

In view of this, the purpose of the present application is to provide a filter manufacturing method and filter, so as to improve the problem of large integration size of the filter manufactured in the prior art.

To achieve the above purpose, the embodiment of the present application adopts the following technical solutions:

A filter making method, comprising:

provide a substrate structure;

A circuit structure is formed on at least one side of the substrate structure, the circuit structure includes at least one circuit layer, and at least one circuit layer has at least one inductance element;

At least one side of the circuit layer close to the substrate structure and/or a side far from the substrate structure is fabricated to form a capacitor structure and/or a resonant structure, the capacitor structure includes at least one capacitor element, the resonant structure the structure includes at least one acoustic resonator;

Wherein, the substrate structure, the circuit structure, and the capacitor structure and/or the resonant structure form a layered stack structure, and the inductance element and the capacitor element and/or the acoustic wave resonator are electrically connected to each other to form a layered stack structure. filter circuit.

In a preferred option of the embodiment of the present application, in the above filter manufacturing method, the at least one side of the circuit layer close to the substrate structure and/or the side away from the substrate structure, The steps of fabricating and forming a capacitive structure and/or a resonant structure include:

Based on at least one outer surface of the substrate structure, at least one capacitive element and/or at least one acoustic resonator is formed.

In a preferred option of the embodiment of the present application, in the above filter manufacturing method, the at least one side of the circuit layer close to the substrate structure and/or the side away from the substrate structure, The steps of fabricating and forming a capacitive structure and/or a resonant structure include:

In at least one concave region of the substrate structure, at least one capacitive element and/or at least one acoustic wave resonator are formed.

In a preferred option of the embodiment of the present application, in the above filter manufacturing method, the step of fabricating and forming at least one capacitive element and/or at least one acoustic resonator in at least one concave region of the substrate structure ,include:

At least one concave area is formed on at least one outer surface of the substrate structure;

In each of the concave regions, a substrate layer is formed based on the outer surface of the substrate structure;

At least one capacitive element and/or at least one acoustic wave resonator is formed based on the side of each layer of the substrate layer that is not in contact with the substrate structure.

In a preferred option of the embodiment of the present application, in the above filter fabrication method, the step of fabricating and forming a substrate layer based on the outer surface of the substrate structure includes:

Based on the outer surface of the substrate structure, a substrate layer with a material different from that of the substrate structure is fabricated, wherein the substrate layer is used to fabricate and form an acoustic wave resonator.

In a preferred option of the embodiment of the present application, in the above filter manufacturing method, the at least one layer of the inductance element is on a side close to the substrate structure and/or a side away from the substrate structure, The steps of fabricating and forming a capacitive structure or a resonant structure include:

After forming one layer of the circuit layer, at least one capacitive element and/or at least one acoustic wave resonator is formed based on the dielectric isolation layer formed on the circuit layer.

In a preferred option of the embodiment of the present application, in the above filter manufacturing method, the step of forming a circuit structure on at least one side of the substrate structure includes:

After forming a layered structure with a capacitive element and/or an acoustic wave resonator, a circuit layer is formed based on the dielectric isolation layer formed on the layered structure.

In a preferred option of the embodiment of the present application, in the above filter manufacturing method, the step of forming a circuit structure on at least one side of the substrate structure includes:

Based on at least one outer surface of the substrate structure, at least one circuit layer is formed.

In a preferred choice of the embodiment of the present application, in the above filter manufacturing method, the step of fabricating and forming at least one layer of circuit layer based on at least one outer surface of the substrate structure includes:

performing a window etching operation on the metal foil on the substrate structure;

Perform a drilling operation based on the side of the metal foil after the opening and etching which is far from the substrate structure to form a connection via hole penetrating the metal foil and the substrate structure;

Perform a metal plating operation on the side of the drilled metal foil away from the substrate structure to form a metal layer covering the metal foil and filling the connection vias;

A pattern etching operation is performed on the side of the metal layer away from the metal foil to form a circuit layer.

Based on the above, an embodiment of the present application further provides a filter, which is fabricated and formed based on the foregoing filter fabrication method.

In the filter manufacturing method and filter provided by the present application, a circuit structure including at least one circuit layer is formed on at least one side of the provided substrate structure, and a capacitor structure is formed on at least one side of the at least one circuit layer. and/or resonant structures, making it possible to form filters comprising inductive elements, capacitive elements and/or acoustic resonators. In this way, since the circuit structure, the capacitor structure and the resonant structure actually form a stacked structure, the integration degree of the formed filter can be improved, so that the integrated size of the filter can be smaller, thereby improving the The filter structure (for example, the components of the filter structure are formed separately, and then packaged together) has the problem of large integration size, which further improves the application range of the produced filter. For example, the smaller the volume, the easier it is to be installed in various applications The environment makes it extremely valuable and can be widely used.

In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, the preferred embodiments are exemplified below, and are described in detail as follows in conjunction with the accompanying drawings.

Description of drawings

FIG. 1 is a schematic flowchart of a method for fabricating a filter according to an embodiment of the present application.

FIG. 2 is a schematic structural diagram of a filter provided by an embodiment of the present application.

FIG. 3 is a schematic diagram of a fabrication position of an inductance element provided by an embodiment of the present application.

FIG. 4 is a schematic diagram of another fabrication position of the inductance element provided by the embodiment of the present application.

FIG. 5 is a schematic flowchart of sub-steps included in step S120 in FIG. 1 .

FIG. 6 is a schematic diagram of the effect of fabricating a circuit layer according to an embodiment of the present application.

FIG. 7 is a schematic diagram of a first fabrication position of the capacitive element provided by the embodiment of the present application.

FIG. 8 is a schematic diagram of a second fabrication position of the capacitive element provided by the embodiment of the present application.

FIG. 9 is a schematic diagram of a third manufacturing position of the capacitive element provided by the embodiment of the present application.

FIG. 10 is a schematic flowchart of sub-steps included in step S130 in FIG. 1 .

FIG. 11 is a schematic diagram of the effect of manufacturing a capacitive element provided by an embodiment of the present application.

FIG. 12 is a schematic circuit diagram of a duplexer provided by an embodiment of the present application.

Icon: 10-duplexer; 12-receive filter; 14-transmit filter; 100-filter; 110-substrate structure; 120-line structure; 121-inductance element; 130-capacitor structure; ; 140-resonant structure; 141-acoustic resonator; 150-dielectric isolation layer.

Detailed ways

In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments It is only a part of the embodiments of the present application, but not all of the embodiments. The components of the embodiments of the present application generally described and illustrated in the drawings herein may be arranged and designed in a variety of different configurations.

Thus, the following detailed description of the embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the application as claimed, but is merely representative of selected embodiments of the application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.

As shown in FIG. 1 and FIG. 2 , an embodiment of the present application provides a method for fabricating a filter, which is used to fabricate a filter 100 . Wherein, the filter manufacturing method may include step S110, step S120 and step S130, and the specific content is as follows.

In step S110, a substrate structure 110 is provided.

In this embodiment, the substrate structure 110 may be provided first, so that other structures (eg, the circuit structure 120 , the capacitor structure 130 , the resonance structure 140 , etc.) can be fabricated and formed based on the substrate structure 110 .

Step S120 , fabricating and forming a circuit structure 120 on at least one side of the substrate structure 110 .

In this embodiment, after the substrate structure 110 is provided based on step S110 , a circuit structure 120 may be formed on at least one side of the substrate structure 110 .

Wherein, the circuit structure 120 may include at least one circuit layer, and at least one of the circuit layers has at least one inductance element 121 to obtain at least one inductance element 121 .

In step S130 , a capacitor structure 130 and/or a resonance structure 140 are fabricated on at least one side of the circuit layer close to the substrate structure 110 and/or a side away from the substrate structure 110 .

In this embodiment, after the substrate structure 110 is provided based on step S110, a capacitor structure 130 and/or a resonance structure 140 may also be fabricated and formed, and the capacitor structure 130 and/or the resonance structure 140 may be located in at least one layer. The circuit layer is close to the side of the substrate structure 110 and/or away from the side of the substrate structure 110 .

Wherein, the capacitive structure 130 may include at least one capacitive element 131 , and the resonant structure 140 may include at least one acoustic resonator 141 . In this way, at least one capacitive element 131 and/or at least one acoustic wave resonator 141 may be formed.

In addition, the substrate structure 110 and the circuit structure 120, as well as the capacitor structure 130 and/or the resonant structure 140 may form a layered stack structure, and the inductance element 121 and the capacitor element 131 and/or the acoustic wave resonator 141 are connected with each other. They can be electrically connected to each other to form a filter circuit.

Based on the above method, a layered stacked filter 100 (including the inductive element 121 , and at least one of the capacitive element 131 and the acoustic wave resonator 141 , forming a stacked relationship) can actually be formed on the provided substrate structure 110 . , that is, the substrate structure 110 , the circuit structure 120 , the capacitor structure 130 , and the resonant structure 140 actually form a stacked structural relationship, so that the integration degree of the formed filter 100 can be improved, so that the The integrated size of the filter 100 can be smaller, so that the problem of large integrated size exists in improving the filter structure made based on the prior art.

In the first aspect, it should be noted for step S110 that the specific manner of providing the substrate structure 110 is not limited, and can be selected according to actual application requirements.

For example, in an alternative example, material structures such as silicon, glass, quartz, sapphire, niobium lithium oxide and lithium tantalate can be directly provided as the substrate structure 110 .

For another example, in another alternative example, a substrate material may also be provided as the substrate structure 110 . Among them, considering that in the substrate material, there is generally a layer of copper foil on both sides of the substrate. In this way, the copper foil can be removed to form the substrate structure 110, or the capacitor element 131 or the inductance element can be directly made of the copper foil. 121 et al.

In the second aspect, it should be noted that for step S120, the specific manner of fabricating and forming the circuit structure 120 is not limited, and can also be selected according to actual application requirements.

For example, in an alternative example, referring to FIG. 3 , at least one circuit layer may be fabricated and formed based on at least one outer surface of the substrate structure 110 .

That is to say, based on an outer surface of the substrate structure 110 , a circuit layer that forms one circuit layer or a multilayer stack may be fabricated. It can also be based on the two opposite outer surfaces of the substrate to form one or more circuit layers respectively, that is, one outer surface can be fabricated to form a circuit layer or a multi-layer stacked circuit layer, and the other The outer surface can also be fabricated to form a single wiring layer or a multi-layer stack of wiring layers.

For another example, in another alternative example, with reference to FIG. 4 , after forming a layered structure with the capacitive element 131 and/or the acoustic wave resonator 141 , the dielectric formed on the layered structure may be The isolation layer 150 is fabricated to form a circuit layer.

That is to say, in a specific application example, after a layered structure with capacitive elements 131 is formed, a dielectric isolation layer 150 is formed on the layered structure, and then based on the dielectric isolation Layer 150 is fabricated to form at least one wiring layer.

In another specific application example, after forming a layered structure with the acoustic wave resonator 141, a dielectric isolation layer 150 can be formed on the layered structure, and then, based on the dielectric isolation layer 150 is fabricated to form at least one circuit layer.

In another specific application example, it is also possible to form a layer of a first layered structure with capacitive elements 131 on one side of the substrate structure 110 , and on the other side of the substrate structure 110 . After forming a second layered structure with the acoustic wave resonator 141, a first dielectric isolation layer and a second dielectric isolation layer are respectively formed on the first layered structure and the second layered structure, and then, At least one circuit layer is formed based on the first dielectric isolation layer and the second dielectric isolation layer, respectively.

Optionally, in the above steps, the specific manner of fabricating and forming the circuit layer is not limited, and can be selected according to actual application requirements.

For example, in an alternative example, when fabricating a circuit layer based on the dielectric isolation layer 150, a metal conductive layer may be formed on the dielectric isolation layer 150 first, and then, based on the metal conductive layer, a metal conductive layer may be formed away from the dielectric isolation layer One side of 150 is drilled to penetrate through the metal conductive layer and the dielectric isolation layer 150. In this way, another layer of metal conductive layer is formed based on the side of the metal conductive layer away from the dielectric isolation layer 150, so that the thickness of the metal conductive layer is Increase and fill the through hole formed by drilling, so that the metal conductive layer can be electrically connected to the capacitor element 131 or the acoustic wave resonator 141 on the side of the dielectric isolation layer 150 away from the metal conductive layer.

For another example, in another alternative example, referring to FIG. 5 and FIG. 6 , the circuit layer is fabricated based on the substrate structure 110, and the substrate structure 110 has metal foil (for example, a substrate material is used to provide the substrate structure) 110), step S120 may include step S121, step S122, step S123 and step S124, and the specific content is as follows.

Step S121 , a window etching operation is performed on the metal foil on the substrate structure 110 .

In this embodiment, when the substrate material is used as the substrate structure 110 in step S110, the metal foil on the substrate structure 110 may be subjected to a window etching operation first. In this way, the thickness of the metal foil can be reduced to facilitate subsequent drilling operations.

In step S122 , a drilling operation is performed on the side of the metal foil after the opening and etching which is far away from the substrate structure 110 , so as to form a connection via hole passing through the metal foil and the substrate structure 110 .

In this embodiment, after the window etching operation is performed on the metal foil based on step S121, a drilling operation (such as laser drilling, etc.) may be performed on the side of the metal foil away from the substrate structure 110 to penetrate through the metal foil. The metal foil and the substrate structure 110 . In this way, connection vias can be formed through the metal foil and the substrate structure 110 .

Step S123 , metal plating is performed on the side of the drilled metal foil away from the substrate structure 110 to form a metal layer covering the metal foil and filling the connection via holes.

In this embodiment, after the drilling operation is performed on the metal foil based on step S122, a metal plating operation may be performed based on the side of the metal foil away from the substrate structure 110. In this way, a metal layer covering the metal foil and filling the connection via holes can be formed, so that the side of the substrate structure 110 away from the metal foil can be electrically connected to the metal foil.

Step S124, a pattern etching operation is performed on the side of the metal layer away from the metal foil to form a circuit layer.

In this embodiment, after the metal plating operation is performed on the metal foil to form the metal layer based on step S123, a pattern (pattern) etching operation may be performed based on the side of the metal layer away from the metal foil. In this way, a wiring layer can be formed.

It can be understood that the formation of the circuit layer in step S124 may refer to either a layered structure with the inductance element 121 or a layered structure without the inductance element 121 , for example, for connecting different elements (such as Conductive connection between inductive elements 121 in other layered structures, between inductive elements 121 and capacitive elements 131, between inductive elements 121 and acoustic wave resonators 141, between capacitive elements 131, between acoustic wave resonators 141, etc.) Wire.

In addition, after the circuit layer is fabricated and formed based on step S124, pattern optical inspection, brown oxidation treatment, medium lamination treatment, etc. may also be performed.

The pattern optical detection may refer to detecting the pattern of the circuit layer formed by fabrication (eg, the pattern of the inductor element 121 ) to determine whether the circuit layer meets the requirements. Brown oxidation treatment can refer to cleaning the residual film and contaminants caused by etching on the circuit layer, and depositing an organic metal film on the surface of the circuit layer to improve the adhesion of the circuit layer (such as Adhesion ability with the dielectric isolation layer 150 to be formed by lamination). The dielectric layer processing may refer to forming a dielectric isolation layer 150 on the fabricated circuit layer.

In addition, for the dielectric isolation layer 150, if the dielectric isolation layer 150 is not the outermost layer of the filter 100, it can be pressed on the circuit layer (or a capacitive element formed during fabrication). 131 or the acoustic resonator 141) to form a layer of isolation layer; if the dielectric isolation layer 150 is the outermost layer of the filter 100, it can be formed on the circuit layer (or the capacitive element 131 or A solder resist layer is formed on the acoustic wave resonator 141).

Wherein, the material of the above-mentioned isolation layer and the solder mask layer can be the same, for example, rubber materials can be used, but the hardness of the isolation layer and the solder mask layer can be different, for example, the hardness of the isolation layer can be smaller than that of the solder mask layer. hardness.

It can be understood that when the solder resist layer is formed, the pins of the circuit layer, the capacitive element 131 or the acoustic resonator 141 need to be exposed, and in order to protect the pins, the pins can be Gold plated.

In the second aspect, it should be noted for step S130 that the specific manner of forming the capacitor structure 130 and/or the resonance structure 140 is not limited, and can be selected according to actual application requirements.

For example, in an alternative example, only the capacitive structure 130 may be fabricated. For another example, in another alternative example, only the resonant structure 140 may be fabricated. For another example, in another alternative example, the capacitive structure 130 and the resonant structure 140 may be fabricated.

Wherein, manufacturing and forming the capacitive structure 130 and/or the resonance structure 140 is actually manufacturing and forming at least one capacitive element 131 and/or at least one acoustic wave resonator 141 .

Optionally, the specific manner of forming the at least one capacitive element 131 and/or the at least one acoustic wave resonator 141 is not limited, and can be selected according to actual application requirements.

For example, in an alternative example, in conjunction with FIG. 7 , to ensure that the fabricated capacitive element 131 and/or the acoustic wave resonator 141 has high performance, step S130 may include the following sub-steps:

At least one capacitive element 131 and/or at least one acoustic wave resonator 141 may be fabricated based on at least one outer surface of the substrate structure 110 .

That is, after providing the substrate structure 110 based on step S110 , at least one capacitive element 131 and/or at least one acoustic wave resonator 141 may be fabricated and formed on the surface of the substrate structure 110 .

In detail, in a specific application example, at least one capacitive element 131 or at least one acoustic wave resonator 141 may be fabricated and formed on an outer surface of the substrate structure 110 . In another specific application example, at least one capacitive element 131 may also be formed on the two outer surfaces of the substrate structure 110 , respectively. In another specific application example, at least one capacitive element 131 can also be fabricated on one outer surface of the substrate structure 110 , and at least one acoustic wave resonance can be fabricated on the other outer surface of the substrate structure 110 device 141. In addition, in another specific application example, at least one acoustic wave resonator 141 may also be formed on the two outer surfaces of the substrate structure 110 , respectively.

For another example, in another alternative example, referring to FIG. 8 , based on certain process requirements, such as the high precision of the lamination process of the dielectric isolation layer 150 , step S130 may also include the following sub-steps:

After one layer of the circuit layer is formed, at least one capacitive element 131 and/or at least one acoustic wave resonator 141 can be formed based on the dielectric isolation layer 150 formed on the circuit layer.

That is to say, after forming one layer of the circuit layer based on step S120, the dielectric isolation layer 150 may be formed on the circuit layer first, and then, based on the side of the dielectric isolation layer 150 far away from the circuit layer, the dielectric isolation layer 150 may be formed. At least one capacitive element 131 , and/or, is fabricated to form at least one acoustic resonator 141 .

In detail, in a specific application example, at least one capacitive element 131 may be formed on the side of the dielectric isolation layer 150 away from the circuit layer. In another alternative example, at least one acoustic resonator 141 may be formed on the side of the dielectric isolation layer 150 away from the circuit layer. In another specific application example, at least one capacitive element 131 can also be formed on the side of the dielectric isolation layer 150 away from the circuit layer, and then another layer of dielectric isolation layer 150 is fabricated, and the dielectric isolation layer 150 is formed on the side of the dielectric isolation layer 150 The side of the layer 150 away from the capacitive element 131 is fabricated to form at least one acoustic resonator 141 . In addition, in another specific application example, at least one acoustic wave resonator 141 can also be formed on the side of the dielectric isolation layer 150 away from the circuit layer, and then another layer of dielectric isolation layer 150 can be fabricated and placed on the side of the dielectric isolation layer 150 away from the circuit layer. At least one capacitive element 131 is formed on the side of the dielectric isolation layer 150 away from the acoustic wave resonator 141 .

For another example, in another alternative example, in order to improve the integration degree of the fabricated filter 100, so that the integration size can be smaller, step S130 may include the following sub-steps:

At least one capacitive element 131 and/or at least one acoustic wave resonator 141 may be formed in at least one concave area of the substrate structure 110 .

That is, after the substrate structure 110 is improved based on step S110 , at least one capacitive element 131 and/or at least one acoustic wave resonator 141 may be formed in at least one concave region of the substrate structure 110 .

In detail, in a specific application example, at least one capacitive element 131 may be fabricated and formed in at least one concave region of the substrate structure 110 . In another specific application example, at least one acoustic wave resonator 141 may also be formed in at least one concave region of the substrate structure 110 . In another alternative example, at least one capacitive element 131 and at least one acoustic wave resonator 141 may also be formed in a plurality of concave regions of the substrate structure 110 , respectively.

Optionally, the specific manner of forming the at least one capacitive element 131 and/or the at least one acoustic wave resonator 141 is not limited, and can also be selected according to actual application requirements.

For example, in an alternative example, in order to reduce the complexity of the process, in conjunction with FIG. 9 , step S130 may include the following sub-steps:

First, at least one concave region can be fabricated on at least one outer surface of the substrate structure 110 ; secondly, at least one capacitive element 131 and/or at least one capacitive element 131 and/or can be fabricated in the concave region based on the outer surface of the substrate structure 110 . At least one acoustic resonator 141 .

For another example, in an alternative example, in order to ensure that the fabricated capacitive element 131 and/or the acoustic wave resonator 141 have good performance, in conjunction with FIG. 10 and FIG. 11 , step S130 may also include steps S131 , S132 and In step S133, the specific content is as follows.

Step S131 , fabricating at least one concave region on at least one outer surface of the substrate structure 110 .

In this embodiment, after the substrate structure 110 is provided based on step S110 , at least one concave region may be fabricated based on at least one outer surface of the substrate structure 110 .

Step S132 , in each of the concave regions, fabricate and form a substrate layer based on the outer surface of the substrate structure 110 .

In this embodiment, after the at least one concave region is fabricated and formed based on step S131, a substrate layer may be fabricated based on the outer surface of the substrate structure 110 in each of the concave regions. In this way, the surface used for manufacturing the capacitive element 131 and/or the acoustic wave resonator 141 can be made relatively flat, which can ensure that the capacitive element 131 and/or the acoustic wave resonator 141 can have good performance while facilitating the manufacture. .

Step S133 , fabricating and forming at least one capacitive element 131 and/or at least one acoustic wave resonator 141 based on the surface of each substrate layer that is not in contact with the substrate structure 110 .

In this embodiment, after the substrate layer is fabricated and formed based on step S132, the substrate layer in each of the recessed regions can be fabricated based on the side of the substrate layer that is not in contact with the substrate structure 110. Capacitive element 131 or acoustic resonator 141 . In this way, at least one capacitive element 131 and/or at least one acoustic resonator 141 can be fabricated.

Optionally, in step S131 , at least one concave region may be formed on one outer surface of the substrate structure 110 , or two opposite outer surfaces of the substrate structure 110 may be formed respectively. At least one recessed region is formed.

In addition, the specific method for forming the concave region is not limited, and can be selected according to actual application requirements. For example, in an alternative example, the concave region can be formed by etching or the like.

Optionally, in step S132, the specific manner of fabricating and forming the substrate layer is not limited, and may also be selected according to actual application requirements.

For example, in an alternative example, the substrate layer may be formed based on the same material fabrication as the substrate structure 110 . That is, the material of the substrate layer and the material of the substrate structure 110 may be the same.

For another example, in another alternative example, the inventor of the present application found that the material suitable for forming the recessed region may not be suitable for making the acoustic wave resonator 141. The substrate layer is formed by fabricating different materials of the substrate structure 110 . That is, the material of the substrate layer and the material of the substrate structure 110 may be different.

In detail, in a specific application example, the material of the substrate structure 110 may be a substrate material or a printed circuit board (PCB) material, and the material of the substrate layer may be silicon, lithium acid Niobium or lithium tantalate.

It can be understood that, in the above examples, the specific form of the fabricated capacitive element 131 and/or the acoustic wave resonator 141 is not limited, and can be selected according to actual application requirements.

On the one hand, the capacitive element 131 may refer to either a plate capacitor (MIM, Metal Insulator Metal) capacitor, or an integrated capacitor, that is, at least one capacitive element 131 is integrated into one body to form an integrated capacitor chip.

On the other hand, the acoustic resonator 141 may refer to either a single resonator or an integrated resonator, that is, to integrate at least one acoustic resonator 141 into one body to form an integrated resonator chip.

Wherein, when making the flat capacitor, the specific method can be as follows: first, the first metal electrode plate can be formed by means of electroplating or the like (if a substrate material is used as the substrate structure 110, and a flat plate is made on the outer surface of the substrate structure 110 In the case of capacitors, the first metal plate can also be formed by pattern etching based on the copper foil included in the substrate material), and secondly, the first metal plate can be formed by PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition method) and other methods based on the first metal plate. A metal electrode plate is fabricated to form a dielectric layer (which can be an electrolyte film, such as tantalum oxide, silicon oxide, silicon nitride, etc.), and then a second metal electrode plate can be fabricated based on the dielectric layer by means of electroplating or the like.

In addition, the specific types of the acoustic resonator 141 may include, but are not limited to, surface acoustic wave resonators (Surface Acoustic Wave, SAW), solid mounted resonators (Solidly Mounted Resonator, SMR), thin film bulk acoustic resonators (Film Bulk Acoustic Resonator, FBAR) and others.

It can be understood that, in the above example, the specific sequence of step S120 and step S130 is not limited, and can be selected according to actual application requirements.

For example, in an alternative example, step S120 may be performed first to form the line structure 120 , and then step S130 may be performed to form the capacitor structure 130 and/or the resonance structure 140 .

For another example, in another alternative example, step S130 may also be performed first to form the capacitor structure 130 and/or the resonance structure 140 , and then step S120 may be performed to form the line structure 120 .

For another example, in another alternative example, step S120 and step S130 can also be performed alternately. For example, after step S120 is performed once to form a circuit layer, step S130 is performed once to form at least one capacitive element 131 or at least one acoustic wave resonance. The controller 141 is executed, and step S120 is performed again to form another circuit layer.

With further reference to FIG. 2 , an embodiment of the present application further provides a filter 100 . Wherein, the filter 100 can be fabricated and formed based on the above-mentioned filter fabrication method.

That is, the filter 100 may include a substrate structure 110 and an inductive structure, and also include a capacitive structure 130 and/or a resonant structure 140 . Wherein, the inductance structure includes at least one circuit layer, and at least one circuit layer has at least one inductance element 121 . The capacitive structure 130 may include at least one capacitive element 131, the resonant structure 140 may include at least one acoustic resonator 141, and between the inductive element 121 and the capacitive element 131 and/or the acoustic resonator 141, there may be are electrically connected to each other to form a filter circuit.

In this way, the substrate structure 110 and the inductor structure, and one of the capacitor structure 130 and the resonant structure 140 can actually form a layered structure relationship, so that the formed filter 100 can have more High integration, that is, smaller integration size.

In the first aspect, it should be noted for the substrate structure 110 that the specific structure of the substrate structure 110 is not limited, and can be selected according to actual application requirements.

For example, in an alternative example, based on electrical connection requirements, the substrate structure 110 may have connection vias penetrating the substrate structure 110 , and the connection vias are filled with metal materials for The two opposite sides of the substrate structure 110 are electrically connected, such as connecting different elements (eg, the inductive element 121 , the capacitive element 131 , the acoustic wave resonator 141 ) on the two sides of the substrate structure 110 .

In the second aspect, it should be noted for the circuit structure 120 that the specific structure of the circuit structure 120 is not limited, and can be selected according to actual application requirements.

For example, in an alternative example, a dielectric isolation layer 150 may be formed on the fabricated layered structure having the capacitive element 131 and/or the acoustic wave resonator 141, and the dielectric isolation layer 150 is far away from the One side of the layered structure may be formed with a circuit layer.

For another example, in another alternative example, at least one outer surface of the substrate structure 110 may be fabricated and formed with at least one circuit layer.

In the third aspect, it should be noted that the capacitor structure 130 and/or the resonance structure 140 are not limited in specific structures, and may be selected according to actual application requirements.

For example, in an alternative example, at least one capacitive element 131 and/or at least one acoustic wave resonator 141 may be fabricated and formed on at least one outer surface of the substrate structure 110 .

For another example, in another alternative example, a dielectric isolation layer 150 may be formed on one of the circuit layers formed by fabrication, and the side of the dielectric isolation layer 150 away from the circuit layer may be fabricated and formed with at least One capacitive element 131 and/or at least one acoustic resonator 141 .

For another example, in another alternative example, the substrate structure 110 may have at least one concave area, and in the at least one concave area, at least one capacitive element 131 and/or at least one capacitive element 131 and/or at least one concave area may be fabricated and formed. An acoustic resonator 141 .

In detail, in a specific application example, a substrate layer may be formed on the outer surface of the substrate structure 110 in each of the concave regions. In this way, at least one capacitive element 131 and/or at least one acoustic wave resonator 141 can be formed on the surface of each substrate layer that is not in contact with the substrate structure 110 .

That is to say, the capacitive element 131 and/or the acoustic wave resonator 141 may be formed in the concave region of the substrate structure 110 by fabricating the substrate layer, respectively.

Wherein, the material type of the substrate layer is not limited. For example, in an alternative example, the material of the substrate layer on which the acoustic wave resonator 141 is fabricated may be different from the material of the substrate structure 110 .

It should be noted that, when the circuit layers are multiple layers, only the dielectric isolation layer 150 may be spaced between the multilayer circuit layers, or the dielectric isolation layer 150 and other layered structures, such as the capacitor structure 130 and/or the dielectric isolation layer 150 may be spaced apart. or resonant structure 140 .

In addition, when there are a plurality of capacitive elements 131 and they are located in different layered structures, the different capacitive elements 131 may be separated by only the dielectric isolation layer 150, or by the dielectric isolation layer 150 and other layered structures. structures, such as wiring layers and/or resonant structures 140 .

And, when there are a plurality of the acoustic wave resonators 141 and they are located in different layered structures, the different acoustic wave resonators 141 may only be separated by the dielectric isolation layer 150, or may be separated by the dielectric isolation layer 150 and other Layered structures, such as capacitive structures 130 and/or resonant structures 140 .

It can be understood that, for the specific structure of the filter 100, reference may be made to the explanation of the above-mentioned filter manufacturing method, which will not be repeated here.

With reference to FIG. 12 , an embodiment of the present application further provides a duplexer 10 . Wherein, the duplexer 10 may include a receive filter 12 and a transmit filter 14, and at least one of the receive filter 12 and the transmit filter 14 belongs to the filter 100 described above.

In detail, the receiving filter 12 can be used to process the received signal (such as a radio frequency signal), and the transmitting filter 14 can be used to process the signal to be transmitted.

To sum up, the filter manufacturing method and filter 100 provided by the present application are formed by fabricating a circuit structure 120 including at least one circuit layer on at least one side of the provided substrate structure 110, and at least one circuit layer is formed. At least one side is fabricated to form the capacitive structure 130 and/or the resonance structure 140, so that the filter 100 including the inductive element 121, the capacitive element 131 and/or the acoustic wave resonator 141 can be formed. In this way, since the circuit structure 120, the capacitor structure 130, and the resonant structure 140 actually form a stacked structure, the integration degree of the formed filter 100 can be improved, so that the integrated size of the filter 100 can be smaller, thereby improving the The filter structure produced in the prior art (for example, each element of the filter structure is formed separately and then packaged into one body) has the problem of large integration size, which further improves the application range of the produced filter 100. For example, the smaller the volume, the better It is easy to set up in various application environments, making its practical value extremely high and can be widely used.

The above descriptions are only preferred embodiments of the present application, and are not intended to limit the present application. For those skilled in the art, the present application may have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of this application shall be included within the protection scope of this application.

Claims (10)

1. A method of making a filter, comprising:

providing a substrate structure;

manufacturing and forming a circuit structure on at least one side of the substrate structure, wherein the circuit structure comprises at least one circuit layer, and the at least one circuit layer is provided with at least one inductance element;

manufacturing and forming a capacitor structure and/or a resonance structure on one side of at least one circuit layer close to the substrate structure and/or one side far away from the substrate structure, wherein the capacitor structure comprises at least one capacitor element, and the resonance structure comprises at least one acoustic wave resonator;

wherein the substrate structure and the line structure, and the capacitance structure and/or the resonance structure form a layered stack structure, and the inductance element and the capacitance element and/or the acoustic wave resonator are electrically connected to each other to form a filter circuit.

2. The method according to claim 1, wherein the step of forming a capacitive structure and/or a resonant structure on at least one of the wiring layers on a side close to the substrate structure and a side far from the substrate structure comprises:

at least one capacitive element and/or at least one acoustic wave resonator is fabricated on the basis of at least one outer surface of the substrate structure.

3. The method according to claim 1, wherein the step of forming a capacitive structure and/or a resonant structure on at least one of the wiring layers on a side close to the substrate structure and a side far from the substrate structure comprises:

and manufacturing and forming at least one capacitance element and/or at least one acoustic wave resonator in at least one concave area of the substrate structure.

4. The method of claim 3, wherein the step of forming at least one capacitive element and/or at least one acoustic wave resonator in the at least one recessed region of the substrate structure comprises:

manufacturing and forming at least one concave area on at least one outer surface of the substrate structure;

manufacturing and forming a substrate layer on the basis of the outer surface of the substrate structure in each concave area;

and manufacturing and forming at least one capacitance element and/or at least one acoustic wave resonator on the basis of the side, not in contact with the substrate structure, of each substrate layer.

5. The method of claim 4, wherein the step of forming a substrate layer based on the outer surface of the substrate structure comprises:

and manufacturing a substrate layer which is made of a material different from that of the substrate structure on the basis of the outer surface of the substrate structure, wherein the substrate layer is used for manufacturing and forming the acoustic wave resonator.

6. The method according to claim 1, wherein the step of forming a capacitor structure or a resonator structure on at least one layer of the inductive element on a side close to the substrate structure and/or a side far from the substrate structure comprises:

after the line layer is formed, at least one capacitance element and/or at least one acoustic wave resonator are formed on the basis of the dielectric isolation layer formed on the line layer.

7. The method of any one of claims 1-6, wherein the step of forming a line structure on at least one side of the substrate structure comprises:

after a layer structure having a capacitor element and/or an acoustic wave resonator is formed, a wiring layer is formed on the basis of a dielectric isolation layer formed on the layer structure.

8. The method of any one of claims 1-6, wherein the step of forming a line structure on at least one side of the substrate structure comprises:

and manufacturing and forming at least one circuit layer based on at least one outer surface of the substrate structure.

9. The method of claim 8, wherein the step of forming at least one wiring layer based on at least one outer surface of the substrate structure comprises:

carrying out windowing etching operation on the metal foil on the substrate structure;

drilling on the basis of one surface, away from the substrate structure, of the metal foil subjected to windowing etching to form a connecting through hole penetrating through the metal foil and the substrate structure;

performing metal electroplating operation on one surface of the drilled metal foil, which is far away from the substrate structure, to form a metal layer covering the metal foil and filling the connecting through hole;

and carrying out pattern etching operation on one surface of the metal layer, which is far away from the metal foil, so as to form a circuit layer.

10. A filter formed by a method of manufacturing a filter according to any one of claims 1 to 9.

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