CN111817015A - High-isolation dual-channel super-surface unit and super-surface - Google Patents
High-isolation dual-channel super-surface unit and super-surface Download PDFInfo
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Abstract
The invention provides a double-channel super-surface unit with high isolation, which consists of a driving module and a parasitic layer. The driving module comprises a feed network layer, a metal ground, a driving patch and two dielectric plates; and the parasitic layer includes a parasitic patch and a dielectric plate. The unit can work in two channels simultaneously, and switch its different operating condition in different channels through PIN pipe real time. The invention combines two aspects of polarization perpendicularity and frequency band interleaving to improve the isolation degree of two channels when working at the same time and avoid mutual interference. Meanwhile, the invention can be used as an independent antenna, and the super surface formed by the antenna can be used for real-time independent control of double channels, thereby greatly improving the isolation and flexibility of satellite communication and radar systems. In addition, the invention replaces the conventional air feed technology commonly used by the super surface with the side feed technology, reduces the section, saves the space, is convenient to integrate with the existing microwave circuit and has good application prospect.
Description
Technical Field
The invention relates to a double-channel super-surface unit with high isolation, belonging to the field of communication and novel artificial electromagnetic materials.
Background
With the continuous development of communication technology, a plurality of microstrip patch antennas and phased array technologies with functions of multi-band, multi-polarization and real-time control appear, so that the requirements of flexibility and low cost in communication are met. However, the multi-channel operation increases the channel capacity, widens the frequency band, and simultaneously has the problems of insufficient channel isolation and the like. Therefore, the problem is solved to a certain extent by introducing a metal side wall, asymmetric feeding, utilizing narrow-band resonance and the like. However, these methods also have the problems of narrow bandwidth, large size, etc., and none of them can control different operating frequency bands and polarizations in real time.
The proposal of the novel artificial electromagnetic super-surface provides a new idea for solving the problem, the multiple functions of beam splitting, beam scanning, imaging, stealth and the like can be realized by arranging units with a limited number of discrete phase states, and the PIN tube is introduced to regulate and control the units in real time through coding, so that the flexibility is strong, the use of a large number of expensive T/R components is reduced, and the cost is greatly reduced. However, most artificial electromagnetic super-surfaces are fed by waveguides or horn antennas, have large volume and are difficult to integrate with common radio frequency circuits.
Disclosure of Invention
The technical problem is as follows: in order to solve the defects of the prior art, the invention provides a dual-channel super-surface unit with high isolation, which can work in two channels simultaneously, and improves the isolation of the two channels when working simultaneously by adopting a method of combining polarization perpendicularity and frequency band isolation. Can switch in real time between two kinds of operating condition of two passageways through the PIN pipe, the introduction of parasitic paster has widened the operating band simultaneously, and the side is presented and is made it more be fit for current radio frequency circuit system, easily integrates. In addition, the super surface formed by the unit can independently control two channels in real time, and has wide application prospect.
The technical scheme is as follows: the invention provides a high-isolation double-channel super-surface unit, which comprises a driving module and a parasitic layer positioned above the driving module, wherein the driving module and the parasitic layer are connected through four plastic columns, the driving module comprises five layers of structures from bottom to top: the feed network layer (1), the first dielectric plate, the metal ground (2), the second dielectric plate, the driving patch (3), the parasitic layer is composed of the third dielectric plate and the parasitic patch (4) printed on the third dielectric plate, wherein the parasitic patch is a metal patch, the shape of the metal patch is not limited, and the parasitic patch can be any shape such as rectangle, diamond and circle. The feed network layer is located on the lower surface of the first dielectric plate, the metal ground (2) is located on the upper surface of the first dielectric plate, the second dielectric plate is located on the upper surface of the metal ground, and the driving patch (3) is located on the upper surface of the second dielectric plate.
In order to ensure normal feeding, a feed network layer at the bottom layer of the drive module is communicated with a drive patch at the top layer through four metal through holes, corresponding round holes are dug in a first medium plate, a second medium plate and a metal ground in the middle to ensure that the four metal through holes can normally penetrate through the four metal through holes.
The driving patch is composed of a metal patch and four bulges, the four bulges are respectively positioned at the middle points of the four sides of the rectangle and used for realizing impedance matching, and the positions of the four metal through holes are respectively positioned at the middle points of the four sides of the driving patch.
Meanwhile, in order to facilitate connection of the negative pole of the PIN tube, the center of the driving patch is connected with the metal ground through a metal through hole. Corresponding round holes are dug in the middle two layers of dielectric plates and the metal ground so as to ensure that four metal through holes at the edge and one metal through hole at the center can normally penetrate through the two layers of dielectric plates.
The feed network layer (1) comprises four groups of choke structures, filter structures and microstrip lines which are arranged on the lower surface of the first dielectric slab; the first dielectric plate is provided with four through holes, and the four metal through holes on the edges of the rectangular metal patches penetrate through the metal ground (2), the second dielectric plate and the metal ground (2) to be communicated with the four through holes on the first dielectric plate;
the first end of each microstrip line in each group is respectively connected with the edge of the lower surface of the first dielectric slab, the choke structure and the filter structure in each group are connected with each microstrip line, the second end of each microstrip line in each group is connected with the via hole on the first dielectric slab through the PIN diode, and the PIN diode is communicated with the choke structure; the power supply device is characterized in that a first channel is formed by two groups of choke structures, filtering structures and microstrip lines in the horizontal direction in a driving patch (3), a feed network layer (1) and two metal through holes which are connected with a first dielectric plate and a rectangular metal patch in the horizontal direction; the second channel is formed by two groups of choke structures, filter structures and microstrip lines in the driving patch (3) and the feed network layer (3) in the vertical direction and two metal through holes which are connected with the first dielectric plate and the rectangular metal patch in the vertical direction.
Moreover, the filtering structure can be a high-low impedance line filtering structure, a hairpin type filtering structure, a parallel coupling line filtering structure, an interdigital filtering structure and other existing filtering structures; further, the choke structure may be other conventional choke structures such as a choke coil.
Has the advantages that: compared with the prior art, the technical scheme of the invention has the following beneficial technical effects:
(1) the invention can work in two channels at the same time, has the characteristic of dual-frequency dual polarization, and can switch two working states (0 and 1) with the initial phase difference of 180 degrees in real time in the two channels respectively by introducing PIN tubes.
(2) The invention improves the isolation degree by combining two aspects of polarization perpendicularity and frequency band interleaving, and introduces an artificial surface plasmon structure in the feed network layer, thereby playing a role in filtering and reducing crosstalk when two channels work simultaneously.
(3) The invention adopts the side feed technology to replace the common air feed technology of the super surface, reduces the section, reduces the space and is convenient to integrate with the existing radio frequency microwave circuit.
(4) The super-surface formed by the invention has the independent regulation and control capability of two channels, namely, the working state of one channel can be regulated and controlled in real time through coding while the other channel realizes a certain function through coding, the two channels cannot influence each other, and the isolation and flexibility of satellite communication and a radar system are greatly improved.
(5) The invention can change the passband by adjusting the geometric structure parameters, is easy to adjust and can adapt to various application environments.
Drawings
FIG. 1 is a schematic structural view of a high isolation dual channel super surface unit, wherein FIG. 1(a) is a three-dimensional view and FIG. 1(b) is a side view;
fig. 2 is a schematic structural diagram of a feed network layer, wherein fig. 2(a) is an overall structure, and fig. 2(b) is a detailed view of a choke structure, a filtering structure and a PIN tube in the feed network layer;
FIG. 3 is a dispersion curve of an artificial surface plasmon transmission structure in a feed network layer;
fig. 4 is a schematic diagram of a driving patch.
FIG. 5 is a scattering parameter simulation (solid line) and experimental results (dashed line) for a high isolation two channel super-surface unit;
FIG. 6 is far field pattern simulation (solid line) and experimental results (dashed line) for a high isolation two channel super-surface cell, where FIG. 6(a) is the result for the E-plane at 10.8GHz, FIG. 6(b) is the result for the H-plane at 10.8GHz, FIG. 6(c) is the result for the E-plane at 13.1GHz, and FIG. 6(d) is the result for the H-plane at 13.1 GHz;
FIG. 7 is a two-channel simulated three-dimensional pattern of a 6 x 6 super-surface consisting of high-isolation two-channel super-surface cells, where FIG. 7(a-b) is a code of all 0 s A0BAs a result, FIG. 7(c-d) is 0A0BAnd 0A1BThe result of the alternate encoding, FIG. 7(e-f) is 0A0BAnd 1A0BAs a result of alternate coding, FIG. 7(g-h) is 0A0BAnd 1A1BAlternating the results of the encoding.
Detailed Description
The technical solution of the present invention is described in detail below with reference to the accompanying drawings and specific embodiments.
The invention is composed of a driving module and a parasitic layer positioned above the driving module, the driving module and the parasitic layer are connected through an insulating column, the height of the insulating column can be set according to actual requirements, the parasitic layer is composed of a dielectric plate and a parasitic patch printed on the dielectric plate, and the parasitic patch is a metal patch. The invention can work in double channels at the same time, and two working states in each channel can be switched in real time.
The specific structure of a high-isolation dual-channel super-surface unit provided by the invention is shown in fig. 1, wherein fig. 1(a) is a three-dimensional view, and fig. 1(b) is a side view. The lower half part of the unit is a driving module, the upper half part of the unit is a parasitic layer, and the middle margin is a 2mm space formed by four plastic columns. Here, the four plastic posts are only an example, and any other insulating posts may be used, and the number of the insulating posts is not limited.
The driving module is composed of five layers of structures, from bottom to top: the feed network layer, the high-frequency microwave dielectric plate with the thickness of 0.508mm, the metal ground, the high-frequency microwave dielectric plate with the thickness of 0.508mm and the drive patch.
The detailed structure at the feed network layer is shown in fig. 2 (a). In order to more clearly illustrate the design of the feed network layer, fig. 2(b) shows one microstrip line and the functional structure of each part added thereon in detail. In fig. 2(b), a filtering structure, a choke structure and a PIN tube are respectively introduced on the microstrip line from right to left.
As shown in fig. 2(b), the choke structure includes a fan-shaped metal patch as a capacitor and a bent metal wire as an inductor, so as to ensure that the transmission of microwave signals is not affected by direct current, one end of the bent metal wire is connected with the central angle of the fan-shaped metal patch, and the metal patch is added below the fan-shaped capacitor, where the metal patch can be in any other shape, such as a rectangular, diamond, or circular lamp, and functions to connect the positive pole of direct current voltage. And the bent metal wire can be a serpentine metal wire or a bent metal wire with other shapes, the other end of the bent metal wire is connected with the first end of the microstrip line, and the second end of the microstrip line is connected with the edge of the dielectric plate of the feed network layer.
The choke structure of the present invention is required to isolate the dc and ac signals to prevent leakage of microwave energy from the dc feed. The low-pass filter structure composed of the fan-shaped capacitor and the bent metal wire inductor is adopted, and besides, the capacitor or the inductor can be replaced by a patch capacitor or a patch inductor, or other existing choke structures such as a choke coil and the like are directly adopted. When other forms of choke structures are adopted, the choke structure is connected with the microstrip line, and when other forms of choke structures are adopted, the choke structure is also connected with a metal patch, and the metal patch can be in any other shape, such as a rectangle, a diamond, a circle and the like, and the metal patch is used for connecting the positive pole of the direct current voltage.
As shown in fig. 2(b), the filtering structure is an artificial surface plasmon transmission structure, and is configured such that metal strips are arranged in a microstrip line having a groove at equal intervals, and the height of the metal strips is uniformly decreased from the middle to both ends of the groove, so as to achieve good impedance matching with the microstrip line.
And the second end of the microstrip line is connected with the metal via hole on the dielectric plate of the feed network layer through the PIN diode, and the four edges of the dielectric plate of the feed network layer (1) are connected according to the mode. A
The feed network layer (1) comprises four groups of choke structures, filter structures and microstrip lines which are arranged on the lower surface of the first dielectric slab; the first dielectric plate is provided with four through holes, and the four metal through holes on the edges of the rectangular metal patches penetrate through the metal ground (2), the second dielectric plate and the metal ground (2) to be communicated with the four through holes on the first dielectric plate;
the first end of each microstrip line in each group is respectively connected with the edge of the lower surface of the first dielectric slab, the choke structure and the filter structure in each group are connected with each microstrip line, the second end of each microstrip line in each group is connected with the via hole on the first dielectric slab through the PIN diode, and the PIN diode is communicated with the choke structure; the power supply device is characterized in that a first channel is formed by two groups of choke structures, filtering structures and microstrip lines in the horizontal direction in a driving patch (3), a feed network layer (1) and two metal through holes which are connected with a first dielectric plate and a rectangular metal patch in the horizontal direction; the second channel is formed by two groups of choke structures, filter structures and microstrip lines in the driving patch (3) and the feed network layer (3) in the vertical direction and two metal through holes which are connected with the first dielectric plate and the rectangular metal patch in the vertical direction.
The filtering structure is an artificial surface plasmon structure, as shown in fig. 2(b), and is embodied as a metal strip with a comb-shaped structure, and the groove depths at the two ends decrease progressively, so that good impedance matching with the microstrip line is achieved. It is noted that the dispersion curve of the artificial surface plasmon transmission structure is not a straight line, but deviates from light, and tends to stabilize the frequency, thereby having a low-pass filtering characteristic.
The filtering structure in the invention needs to be capable of filtering out electromagnetic waves of 11.7-12.2GHz, thereby ensuring that no crosstalk occurs when two channels work simultaneously. The artificial surface plasmon structure is adopted, and in addition, the existing filtering structures such as a high-low impedance line filtering structure, a hairpin type filtering structure, a parallel coupling line filtering structure, an interdigital filtering structure and the like can be adopted, so long as the filtering of the target frequency can be realized.
As an example, in fig. 2(a), the highest metal strip in the two grooves in the horizontal direction is 4mm, and the highest metal strip in the two grooves in the vertical direction is 2.2mm, and the dispersion curve thereof is as shown in fig. 3. The filtering structure and the choking structure in the horizontal direction are the same, and the filtering structure and the choking structure in the vertical direction are the same.
As shown in fig. 2, the PIN diode is soldered at the position of the black square in the figure, the positive electrode is connected to the side close to the choke and filter structure, and the negative electrode is connected to the side close to the metal via hole.
The PIN diode can select components of MACOM, Skywoks, Panason and the like according to actual conditions, can be equivalent to a resistor and an inductor which are connected in series in a conducting state, can be equivalent to an inductor and a capacitor which are connected in series in a disconnecting state, and can control the working state of the unit by controlling the conducting and disconnecting state of the PIN diode.
According to the difference of the initial phase of the unit, two working states of the unit in the same channel can be respectively defined as '0' and '1'. The cell has two phase response states to waves input from microstrip ports at two ends of the same channel, for example, a "0" state refers to a phase response of the cell at 0 degree, a "1" state refers to a phase response of the cell at 180 degrees, a "0" state and a "1" state are only required to satisfy that the difference of the phase responses is 180 degrees, for example, a "0" state refers to a phase response of the cell at 45 degrees, and a "1" state refers to a phase response of the cell at 225 degrees, which is only exemplified here and not necessarily limited to the above data, as long as the two states satisfy a phase difference of the responses at 180 degrees.
When the same channel works, only one PIN tube is conducted, and the two channels can work simultaneously. For example, in fig. 2(a), the state is 0 when only the left PIN tube works, and the state is 1 when only the right PIN tube works, and the states of "0" and "1" can be arbitrarily selected when two PIN tubes of the same channel work, that is, the left side can also be "1" state, and the right side is "0" state, where the working state refers to the working state when the PINs are turned on; the state of the cell in fig. 2(a) when the upper and lower PINs are operated is set as described above.
The dual channels herein support horizontally polarized channels at low frequencies of 10.1-11.7GHz and vertically polarized channels at high frequencies of 12.2-14.1GHz, respectively. Specifically reflected in fig. 2(a), the horizontally oriented path supports horizontally polarized waves of 10.1-11.7GHz, and the vertically oriented path supports vertically polarized waves of 12.2-14.1 GHz.
The detailed structure of the driving patch is shown in fig. 4, and the driving patch is composed of a 7.6 × 6.4mm metal patch and four protrusions, wherein the four protrusions are respectively located at the midpoint positions of four sides of a rectangle, and are used for realizing impedance matching. In order to ensure normal feeding, the feeding network layer at the bottom layer of the driving module is connected with the driving patch at the top layer through four metal via holes, and the positions of the four metal via holes are respectively located at the midpoints of four edges of the driving patch, namely the positions of four wafers at the edge in fig. 4.
Meanwhile, in order to facilitate connection of the negative pole of the PIN tube, the center of the driving patch is connected with the metal ground through a metal through hole. Corresponding round holes are dug in the middle two layers of dielectric plates and the metal ground so as to ensure that four metal through holes at the edge and one metal through hole at the center can normally penetrate through the two layers of dielectric plates.
The parasitic layer is composed of an upper parasitic patch and a lower high-frequency microwave dielectric plate with the thickness of 0.508mm, wherein the parasitic patch is a rectangular metal patch with the thickness of 8 multiplied by 5.4 mm.
When the unit works, the positive pole of the direct current power supply is connected with the metal patch connected with the choking part, and the negative pole is connected with the metal ground. Microwave energy is fed in from a microstrip port of the feed network layer, drives the patch through the excitation of the metal through hole, and reaches the parasitic patch through air so as to radiate electromagnetic waves to the space.
The unit can be regulated and controlled to work in different states of different channels by controlling the on-off of the four PIN tubes. For example, only the PIN tube on the left side is conducted, and the unit works in the 0 state of the low-frequency channel; only the PIN tube on the upper side is conducted, and the unit works in a 0 state of a high-frequency channel; and the PIN tube on the left side and the PIN tube on the lower side are simultaneously conducted, and the unit works in the '0' state of a low-frequency channel and the '1' state of a high-frequency channel simultaneously. Specifically, the "0" and "1" states are defined with reference to the above definition, that is, the "0" state is defined with an initial phase of 0 degrees and the "1" state is defined with an initial phase of 180 degrees, in accordance with the cell initial phase distinction.
The scattering parameters for the simulation and experiment of the unit are shown in fig. 5, where the simulation software used HFSS. As can be taken from fig. 5, when the left and lower PIN tubes are switched on so that the cell operates in a "0" state in both channels, the reflection of both bands is low. At the same time, the cell has broadband characteristics on both channels: 10.1-11.7GHz and 12.2-14.1GHz, with relative bandwidths of 14.8% and 14.5%, respectively. And the measured band isolation of the two channels shown in fig. 5 is less than-20 dB in the full band, which indicates that there is good band isolation between the two channels. The left and lower PIN tubes are described with reference to fig. 2 (a).
The results of simulations and experiments on gain and far field patterns in order to demonstrate the radiation capability of the cell are shown in fig. 6. Wherein E-plane and H-plane patterns of the unit at a center frequency of 10.8GHz are respectively shown in FIGS. 6(a) and (b), and E-plane and H-plane patterns of 13.1GHz are respectively shown in FIGS. 6(c) and (d). The maximum gains of the unit at 10.8GHz and 13.1GHz are respectively 6.9dB and 6.7dB, and good radiation characteristics are reflected. At the same time, it can be seen that the cross polarization at 10.8GHz is below-25 dB, and the cross polarization at 13.1GHz is below-17 dB, indicating that there is good polarization isolation between the two.
The super surface formed by the units can realize different functions through coding, and more importantly, the super surface has the capability of independently adjusting two channels, so that the degree of freedom of regulation is increased. Each cell has in two channels as described aboveTwo states "0"/"1", recording the state of channel A as 0AAnd 1AThe state of channel B is recorded as 0BAnd 1BThe operating state of each cell can be represented by a combination of the two states of the different channels.
For example, 0A1BIndicating that the cell appears as a "0" in channel a and a "1" in channel B. Here, a 6 x 6 super-surface is used as an example, and adjacent cells are arranged with a certain distance in both x and y directions, and their three-dimensional far-field patterns are calculated by CST, as shown in fig. 7. Wherein, FIG. 7(a-b) shows that the codes are all 0A0BAs a result, FIG. 7(c-d) is 0A0BAnd 0A1BThe result of the alternate encoding, FIG. 7(e-f) is 0A0BAnd 1A0BAs a result of alternate coding, FIG. 7(g-h) is 0A0BAnd 1A1BAlternating the results of the encoding.
When all units are coded as 0A0BWhen the super-surface transmits an upward beam in both channels, it can be used as a high gain antenna, as shown in fig. 7 (a-b). After that, the state of the channel A is kept unchanged, and the state of the pass band B is changed to be staggered from '0'/'1', namely, the state of the unit in the y direction shows 0A0BAnd 0A1BWhen the super-surface generates two symmetrically split beams in channel B, as shown in fig. 7 (c-d). Notably, the ability of the two channels to be independently controlled is demonstrated when the super-surface is still transmitting an upward beam in channel a. This is illustrated more fully in the remaining patterns of fig. 7, and this control method is also applicable to x-direction changes. And, these encodings can also be switched flexibly in real time.
Claims (5)
1. A dual-channel super-surface unit with high isolation is characterized by comprising a driving module and a parasitic layer, wherein the driving module and the parasitic layer are connected through an insulating column; the driving module comprises five layers of structures, namely a feed network layer (1), a first dielectric plate, a metal ground (2), a second dielectric plate and a driving patch (3), wherein the five layers of structures are sequentially stacked, and the parasitic layer comprises a third dielectric plate and a metal patch positioned on the upper surface of the third dielectric plate;
the driving patch comprises a rectangular metal patch and four protruding metal blocks, the four protruding metal blocks are respectively positioned at the middle points of four sides of the rectangular metal patch, and the center of the rectangular metal patch is communicated with the center of the metal ground (2) through a through hole;
the feed network layer (1) is arranged on the lower surface of the first dielectric slab and comprises four groups of choke structures, filter structures and microstrip lines; the first dielectric plate is provided with four through holes, and the four metal through holes on the edges of the rectangular metal patches penetrate through the second dielectric plate and the metal ground (2) to be communicated with the four through holes on the first dielectric plate;
the first end of each microstrip line in each group is respectively connected with the edge of the lower surface of the first dielectric slab, the choke structure and the filter structure in each group are connected with each microstrip line, the second end of each microstrip line in each group is connected with the via hole on the first dielectric slab through the PIN diode, and the PIN diode is communicated with the choke structure; the power supply device is characterized in that a first channel is formed by two groups of choke structures, filtering structures and microstrip lines in the horizontal direction in a driving patch (3), a feed network layer (1) and two metal through holes which are connected with a first dielectric plate and a rectangular metal patch in the horizontal direction; the second channel is formed by two groups of choke structures, filter structures and microstrip lines in the driving patch (3) and the feed network layer (3) in the vertical direction and two metal through holes which are connected with the first dielectric plate and the rectangular metal patch in the vertical direction.
2. The dual channel super surface unit with high isolation of claim 1, wherein the four choke structures are connected with metal patches for connecting with the positive pole of a power supply and metal ground for connecting with the negative pole of the power supply.
3. A dual channel super surface unit with high isolation as claimed in claim 1 or 2, wherein the filter structure on the first channel is different from the filter structure on the second channel.
4. The dual-channel super-surface unit with high isolation according to claim 1 or 2, wherein the unit has two phase response states for waves input from microstrip ports at two ends of the same channel, the phase difference between the two phase response states is 180 degrees, only one PIN tube is conducted when the same channel operates, and the two channels can operate simultaneously.
5. A meta-surface comprising cells according to claims 1-4, wherein the meta-surface is a square matrix of N x N cells, the state of each cell being characterized by the phase response states of the first channel and the second channel.
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| CN113644417A (en) * | 2021-08-09 | 2021-11-12 | 上海交通大学 | Phasor beam adjustable antenna and conformal antenna array formed by same |
| CN113708080A (en) * | 2021-09-03 | 2021-11-26 | 南京大学 | Efficient phase dynamically adjustable reflection super-structure surface |
| CN116544663A (en) * | 2023-06-06 | 2023-08-04 | 北京邮电大学 | Terahertz wave band four-arm spiral pattern reconfigurable antenna |
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