CN111800997A - Electromagnetic wave shielding film - Google Patents
Electromagnetic wave shielding film Download PDFInfo
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- CN111800997A CN111800997A CN202010489211.1A CN202010489211A CN111800997A CN 111800997 A CN111800997 A CN 111800997A CN 202010489211 A CN202010489211 A CN 202010489211A CN 111800997 A CN111800997 A CN 111800997A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0073—Shielding materials
- H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
- B32B3/30—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract
Description
本申请是申请日为2017年09月06日,申请号为201710796140.8,名称为“电磁波屏蔽膜”的发明专利申请的分案申请。This application is a divisional application for an invention patent application with an application date of September 6, 2017, an application number of 201710796140.8, and the title of "electromagnetic wave shielding film".
技术领域technical field
发明涉及一种电磁波屏蔽膜。The invention relates to an electromagnetic wave shielding film.
背景技术Background technique
近年来智能手机、平板型信息终端等对大容量数据高速传送的性能要求越来越高。要将大容量数据高速传送就需要高频信号。但使用高频信号则印制布线板上信号电路会产生电磁波噪声,导致周围机器运行错误。为防止运行错误就要屏蔽印制布线板使其不受电磁波影响。In recent years, the performance requirements for high-speed transmission of large-capacity data such as smart phones and tablet-type information terminals have become higher and higher. High-frequency signals are required to transmit large-capacity data at high speed. However, using high-frequency signals will generate electromagnetic wave noise from the signal circuit on the printed wiring board, causing the surrounding machines to operate incorrectly. To prevent operating errors, the printed wiring board is shielded from electromagnetic waves.
为屏蔽印制布线板,已有方法为将含有绝缘层、屏蔽层的电磁波屏蔽膜加热加压贴付到印制布线板以获得屏蔽印制布线板的方法。(例如、专利文献1)。In order to shield a printed wiring board, there has been a method of applying heat and pressure to an electromagnetic wave shielding film including an insulating layer and a shielding layer to a printed wiring board to obtain a shielded printed wiring board. (For example, Patent Document 1).
电磁波屏蔽膜的绝缘层表面上,为保护绝缘层不受伤、不受异物影响,贴上了聚对苯二甲酸乙二醇酯(PET)树脂等形成的保护膜。保护膜会在电磁波屏蔽膜贴付在印制布线板后剥离。保护膜剥离前,绝缘层表面受到保护,屏蔽印制布线板可以光手接触。A protective film made of polyethylene terephthalate (PET) resin is attached to the surface of the insulating layer of the electromagnetic wave shielding film to protect the insulating layer from damage and foreign matter. The protective film is peeled off after the electromagnetic wave shielding film is attached to the printed wiring board. Before the protective film is peeled off, the surface of the insulating layer is protected, and the shielded printed wiring board can be touched with bare hands.
现有技术文献prior art literature
专利文献Patent Literature
【专利文献1】特开2004-095566号公报。[Patent Document 1] Japanese Patent Laid-Open No. 2004-095566.
发明内容SUMMARY OF THE INVENTION
发明课题Invention subject
保护膜剥离后光手接触屏蔽印制布线板,则去掉保护膜后的绝缘层上可能附着指纹。附着指纹处会变色,外观受损。存在成品率低的问题。After the protective film is peeled off, if the bare hand touches the shielded printed wiring board, fingerprints may be attached to the insulating layer after the protective film is removed. Fingerprints will be discolored and the appearance will be damaged. There is a problem of low yield.
绝缘层有指纹附着对电磁波屏蔽特性几乎无影响。因此只要防止附着指纹造成的绝缘层变色就能防止屏蔽印制布线板的成品率低下。防止附着指纹造成绝缘层变色的方法可以是去除指纹。指纹去除一般使用洗剂(洗剤)、溶剂。对象是电磁波屏蔽膜的绝缘层,则洗剂(洗剤)、溶剂会影响屏蔽印制布线板的电特性,因此不能使用。Fingerprints attached to the insulating layer have little effect on the electromagnetic wave shielding properties. Therefore, as long as the discoloration of the insulating layer due to the adhesion of fingerprints is prevented, the yield of the shielded printed wiring board can be prevented from being lowered. A method to prevent discoloration of the insulating layer caused by attached fingerprints may be to remove the fingerprints. Fingerprint removal generally uses lotions (washing agents) and solvents. If the object is the insulating layer of the electromagnetic wave shielding film, the detergent (washing agent) and solvent will affect the electrical characteristics of the shielded printed wiring board, so it cannot be used.
以往,针对电磁波屏蔽膜想用无纺布等擦掉指纹而摩擦表面,则表面状态会局部变化,反而导致变色更严重。另外大力摩擦表面还会导致绝缘层从屏蔽层剥离,导致电磁波屏蔽膜破损。In the past, for electromagnetic wave shielding films, if the surface was rubbed by wiping off fingerprints with a non-woven fabric or the like, the surface state would change locally, and on the contrary, the discoloration would be more serious. In addition, vigorously rubbing the surface will cause the insulating layer to peel off from the shielding layer, resulting in damage to the electromagnetic wave shielding film.
本发明课题提供一种不易因擦掉指纹而导致变色的电磁波屏蔽膜。The subject of the present invention is to provide an electromagnetic wave shielding film that is less likely to be discolored by wiping off fingerprints.
解决手段solution
本发明电磁波屏蔽膜的第1技术方案含有绝缘层、导电层,绝缘层表面的三维(三次元)算术平均表面粗糙度Sa为0.8μm以上。The first aspect of the electromagnetic wave shielding film of the present invention includes an insulating layer and a conductive layer, and the three-dimensional (three-dimensional) arithmetic mean surface roughness Sa of the surface of the insulating layer is 0.8 μm or more.
电磁波屏蔽膜第1技术方案中,绝缘层表面的85°光泽度在20以下。本发明电磁波屏蔽膜第2技术方案含有绝缘层、导电层,绝缘层表面的均方根斜率(二乗平均平方根傾斜)Sdq为0.8以上且85°光泽度为10以下。In the first aspect of the electromagnetic wave shielding film, the 85° glossiness of the surface of the insulating layer is 20 or less. A second aspect of the electromagnetic wave shielding film of the present invention includes an insulating layer and a conductive layer, and the root-mean-square slope (square root slope) Sdq of the insulating layer surface is 0.8 or more and 85° glossiness is 10 or less.
本发明电磁波屏蔽膜第3技术方案含有绝缘层、导电层,绝缘层表面的偏度(スキューネス)Ssk为0.1以上且85°光泽度为10以下。A third aspect of the electromagnetic wave shielding film of the present invention includes an insulating layer and a conductive layer, and the surface skewness Ssk of the insulating layer is 0.1 or more and 85° glossiness is 10 or less.
电磁波屏蔽膜的各技术方案中,可以使绝缘层L*值在25以下。In each aspect of the electromagnetic wave shielding film, the L* value of the insulating layer can be set to 25 or less.
发明效果Invention effect
本发明的电磁波屏蔽膜能防止擦拭指纹导致的变色。The electromagnetic wave shielding film of the present invention can prevent discoloration caused by wiping fingerprints.
附图说明Description of drawings
【图1】一实施方式中电磁波屏蔽膜的截面图;[FIG. 1] A cross-sectional view of an electromagnetic wave shielding film in an embodiment;
【图2】变形例中电磁波屏蔽膜的截面图;[Fig. 2] A cross-sectional view of the electromagnetic wave shielding film in the modification;
【图3】绝缘层的均方根斜率(二乗平均平方根傾斜)与光泽度关系的点绘图;[Figure 3] A point plot of the relationship between the root mean square slope (square root mean square slope) of the insulating layer and gloss;
【图4】绝缘层的偏度(スキューネス)与光泽度关系的点绘图。[FIG. 4] A dot plot of the relationship between the skewness of the insulating layer and the glossiness.
具体实施方式Detailed ways
以下对本发明电磁波屏蔽膜进行具体说明。本发明不限于以下实施方式,在不变更本发明主旨的范围内可进行适当变形、应用。The electromagnetic wave shielding film of the present invention will be specifically described below. The present invention is not limited to the following embodiments, and can be appropriately modified and applied within the scope of not changing the gist of the present invention.
(电磁波屏蔽膜)(Electromagnetic wave shielding film)
图1为本实施方式中电磁波屏蔽膜的示意性概略截面图。如图1,电磁波屏蔽膜含有:绝缘层110、导电层即屏蔽层120。屏蔽层120与绝缘层110相反一侧的面上可以根据需要设置接着剂层130。设置接着剂层130就能简单地将电磁波屏蔽膜贴合于印制布线板。FIG. 1 is a schematic schematic cross-sectional view of the electromagnetic wave shielding film in the present embodiment. As shown in FIG. 1 , the electromagnetic wave shielding film includes an
-绝缘层--Insulation-
绝缘层110为保护屏蔽层而设。本实施方式的电磁屏蔽膜中,表示绝缘层110的表面性状的参数——三维(三次元)算术平均表面粗糙度Sa为0.8μm以上,1.0μm以上更佳。Sa在0.8μm以上,能够使绝缘层的表面几乎不会因擦拭指纹变色。此处所说几乎不会因擦拭指纹变色的表面是指,指纹附着部分经擦拭布(wiping cloth)等擦拭后表面呈现肉眼难以与指纹未附着部分区别的状态。The
从指纹成分实际的除去性角度考虑,Sa宜为10μm以下,5μm以下更佳,3μm以下更好。Sa在一定程度上较小的话,具有易从后述剥离膜剥离绝缘层的效果。Sa超过上述值较难擦拭附着的指纹。From the viewpoint of the actual removability of fingerprint components, Sa is preferably 10 μm or less, more preferably 5 μm or less, and more preferably 3 μm or less. When Sa is small to a certain extent, there is an effect that the insulating layer can be easily peeled off from the peeling film described later. If Sa exceeds the above-mentioned value, it becomes difficult to wipe off the attached fingerprints.
擦拭掉指纹后的绝缘层110表面用肉眼观察,对擦拭指纹变色的程度进行感官评价,由此就能定性评价。还能通过表面光泽度变化定量评价。定量评价方法可以是:使指纹附着再擦除,然后测定绝缘层110表面的85°光泽度。此时,使指纹附着再擦除后的85°光泽度宜为20以下,10以下更佳,此时擦拭指纹的痕迹很难被肉眼识别。其他定量的评价方法有:测定使指纹附着再擦除后绝缘层110表面的光泽度与指纹附着前的光泽度之差。即,使指纹附着再擦除后绝缘层110的表面的光泽度与指纹附着前光泽度之差越小则因擦拭指纹变色的程度越小。以85°光泽度为例,例如,使指纹附着再擦除后的光泽度与指纹附着前光泽度相比的光泽度差宜为4以下,3以下更佳,此时指纹未附着部分和指纹擦除部分难以被肉眼辨别。The surface of the
关于本实施方式中电磁波屏蔽膜,要防止因擦拭指纹而变色,可以如下设置绝缘层110表面的Sa以外的表面性状参数。均方根斜率(二乗平均平方根傾斜)Sdq宜为0.8以上,0.95以上更佳。指纹附着处与未附着处相比更容易反射光,指纹附着部分很显眼。绝缘层110的表面色调为黑色且L*值越小指纹附着部分越显眼。在此,Sdq在某种程度上较大的话,表面能适当散射光,能防止指纹附着导致反射增强。尤其是L*值在25以下时,增大Sdq能有效实现指纹附着部分不显眼的效果。Regarding the electromagnetic wave shielding film of the present embodiment, in order to prevent discoloration due to wiping off fingerprints, surface property parameters other than Sa on the surface of the insulating
此外,要使后述剥离膜易于从绝缘层剥离的话,Sdq宜为10以下,7.0以下更佳,3.0以下更好。Further, in order to facilitate the peeling of the release film to be described later from the insulating layer, Sdq is preferably 10 or less, more preferably 7.0 or less, and more preferably 3.0 or less.
偏度(スキューネス)Ssk宜为0.1以上,0.5以上更佳,1.0以上更好。关于Ssk,凹凸面中以平均面为基准的凸部和凹部呈现对称性,Ssk越大则以平均面为基准的凸部成分越少,凸部以外的部分(谷部和平坦部)相对增加。因此,在一定程度上增大Ssk就更容易擦拭指纹。The skewness (スキューネス) Ssk is preferably 0.1 or more, more preferably 0.5 or more, and more preferably 1.0 or more. Regarding Ssk, the convex and concave parts of the uneven surface are symmetrical based on the average surface. The larger the Ssk, the less the convex part based on the average surface. The parts other than the convex parts (valley parts and flat parts) are relatively increased. . Therefore, increasing Ssk to a certain extent makes it easier to wipe fingerprints.
此外,Ssk宜为10以下,5.0以下更佳,3.0以下更好。Ssk在上述范围内就能获得易于从后述剥离膜剥离绝缘层的效果。Further, Ssk is preferably 10 or less, more preferably 5.0 or less, and more preferably 3.0 or less. When Ssk is within the above-mentioned range, the effect that the insulating layer can be easily peeled off from the peeling film described later can be obtained.
此外,最大峰高(山高さ)Sp宜为8.0μm以上。均方根(二乗平均平方根)偏差Sq宜为1.0μm以上,1.2μm以上更佳,1.3μm以上更好。突出峰部高度Spk宜为1.0μm以上,1.5μm以上更佳,1.7μm以上更好。中心部的空隙容积Vvc宜为1.1ml/m2以上,1.3ml/m2以上更佳。峰部的实体体积Vmp宜为0.07ml/m2以上,0.08ml/m2以上更佳,0.1ml/m2以上更好。In addition, the maximum peak height (mountain height) Sp is preferably 8.0 μm or more. The root mean square (square root mean square root) deviation Sq is preferably 1.0 μm or more, more preferably 1.2 μm or more, and more preferably 1.3 μm or more. The protruding peak height Spk is preferably 1.0 μm or more, more preferably 1.5 μm or more, and more preferably 1.7 μm or more. The void volume Vvc of the central portion is preferably 1.1 ml/m 2 or more, more preferably 1.3 ml/m 2 or more. The physical volume Vmp of the peak is preferably 0.07 ml/m 2 or more, more preferably 0.08 ml/m 2 or more, and more preferably 0.1 ml/m 2 or more.
此外,Sp在20μm以下为佳,18μm以下更佳,15μm以下更好。Sq在10μm以下为佳,5.0μm以下更佳,3.0μm以下更好。Spk在10μm以下为佳,5.0μm以下更佳,3.0μm以下更好。Vvc在10ml/m2以下为佳,5.0ml/m2以下更佳,3.0ml/m2以下更好。Vmp在1.0ml/m2以下为佳,0.5ml/m2以下更佳,0.3ml/m2以下更好。Sp、Spk、Vvc、Vmp分别在上述数值范围内则具有易从后述剥离膜剥离绝缘层的效果。Further, Sp is preferably 20 μm or less, more preferably 18 μm or less, and more preferably 15 μm or less. Sq is preferably 10 μm or less, more preferably 5.0 μm or less, and more preferably 3.0 μm or less. Spk is preferably 10 μm or less, more preferably 5.0 μm or less, and more preferably 3.0 μm or less. Vvc is preferably 10ml/m 2 or less, more preferably 5.0ml/m 2 or less, and more preferably 3.0ml/m 2 or less. Vmp is preferably 1.0 ml/m 2 or less, more preferably 0.5 ml/m 2 or less, and more preferably 0.3 ml/m 2 or less. When Sp, Spk, Vvc, and Vmp are within the above numerical ranges, respectively, there is an effect that the insulating layer can be easily peeled off from the peeling film described later.
此外,也可以用其他参数来规定不易因擦拭指纹变色的表面,而非用Sa来规定。例如,要获得不易因擦拭指纹变色的表面,宜采用以平均面为基准的凸部所占比例较小且凸部高度较高的表面。因此可选择:Sp为7.0μm以上,优选8.0μm以上且Ssk为0以上,优选0.1以上。此外可以选择:Sp为7.0μm以上,优选为8.0μm以上且Sdq为0.8以上,优选为0.9以上。此外可以选择:Sq为1.0μm以上、且Ssk为0以上优选0.1以上。此外可以选择:Sq为1.0μm以上优选1.2μm以上且Sdq为0.8以上优选0.9以上。此外可以选择:Spk为1.0μm以上且Ssk为0以上优选0.1以上。此外可以选择:Spk为1.0μm以上优选1.5μm以上且Sdq为0.8以上优选0.9以上。In addition, other parameters can also be used to specify the surface that is not easily discolored by wiping fingerprints instead of Sa. For example, in order to obtain a surface that is not easily discolored by wiping fingerprints, it is preferable to use a surface with a small proportion of convex parts and a high convex part height based on the average surface. Therefore, it can be selected that Sp is 7.0 μm or more, preferably 8.0 μm or more, and Ssk is 0 or more, preferably 0.1 or more. In addition, it is possible to select that Sp is 7.0 μm or more, preferably 8.0 μm or more, and Sdq is 0.8 or more, preferably 0.9 or more. In addition, it is possible to select that Sq is 1.0 μm or more, and Ssk is 0 or more, preferably 0.1 or more. In addition, it is possible to select that Sq is 1.0 μm or more, preferably 1.2 μm or more, and Sdq is 0.8 or more, preferably 0.9 or more. In addition, it is possible to select that Spk is 1.0 μm or more and Ssk is 0 or more, preferably 0.1 or more. In addition, it is possible to select that Spk is 1.0 μm or more, preferably 1.5 μm or more, and Sdq is 0.8 or more, preferably 0.9 or more.
此外,可以选择:Sp为20μm以下优选18μm以下且Ssk为10以下优选5以下。此外可以选择:Sp为20μm以下优选18μm以下且Sdq为10以下优选3.0以下。此外可以选择:Sq为10μm以下优选5μm以下且Ssk为10以下优选5.0以下。此外可以选择:Sq为10μm以下优选5.0μm以下且Sdq为10以下优选3.0以下。此外可以选择:Spk为10μm以下优选5.0μm以下且Ssk为10以下优选5.0以下。此外可以选择:Spk为10μm以下优选5.0μm以下且Sdq为10以下优选3.0以下。设定在上述数值范围内能实现易于从剥离膜剥离绝缘层的效果。In addition, it is possible to select that Sp is 20 μm or less, preferably 18 μm or less, and Ssk is 10 or less, preferably 5 or less. In addition, it can be selected that Sp is 20 μm or less, preferably 18 μm or less, and Sdq is 10 or less, preferably 3.0 or less. In addition, it can be selected that Sq is 10 μm or less, preferably 5 μm or less, and Ssk is 10 or less, preferably 5.0 or less. In addition, it is possible to select that Sq is 10 μm or less, preferably 5.0 μm or less, and Sdq is 10 or less, preferably 3.0 or less. In addition, it is possible to select that Spk is 10 μm or less, preferably 5.0 μm or less, and Ssk is 10 or less, preferably 5.0 or less. In addition, it is possible to select that Spk is 10 μm or less, preferably 5.0 μm or less, and Sdq is 10 or less, preferably 3.0 or less. Setting within the above-mentioned numerical range can achieve the effect that the insulating layer can be easily peeled from the release film.
本发明中表面性状测定值基于ISO 25178-6:2010测得,具体的测定方法将在实施例进行说明。In the present invention, the measured value of the surface properties is measured based on ISO 25178-6:2010, and the specific measurement method will be described in the examples.
绝缘层110中,指纹附着前的60°光泽度在3以下为宜,2以下更佳,1以下更好。此外,85°光泽度优选20以下,更优选15以下,更加优选10以下,进一步优选5以下,进一步优选3以下。In the insulating
将指纹附着前的光泽度设为上述值,则绝缘层110表面产生适度的光散射,能适度控制光泽感。这样就能进一步防止因擦拭指纹变色。When the glossiness before fingerprint adhesion is set to the above-mentioned value, moderate light scattering occurs on the surface of the insulating
进一步来说,绝缘层110在指纹附着前的60°光泽度优选3以下,更优选2以下,更优选1以下,且85°光泽度优选20以下,更优选15以下,更优选10以下,更优选5以下,更优选3以下,这样就能获得极不易因擦拭指纹变色的表面。Further, the 60° glossiness of the insulating
本发明中的60°光泽度和85°光泽度可以通过实施例所示方法测定。The 60° gloss and the 85° gloss in the present invention can be determined by the methods shown in the examples.
进一步来说,Sdq为0.8以上优选0.9以上且85°光泽度为10以下优选5以下更优选3以下,这样不易因擦拭指纹变色。Furthermore, Sdq is 0.8 or more, preferably 0.9 or more, and the 85° glossiness is 10 or less, preferably 5 or less, and more preferably 3 or less, so that discoloration by wiping fingerprints is less likely to occur.
此外,Ssk大于0优选0.1以上更优选0.5以上且85°光泽度为10以下优选5以下更优选3以下,这样不易因擦拭指纹变色。In addition, Ssk is more than 0, preferably 0.1 or more, more preferably 0.5 or more, and 85° glossiness is 10 or less, preferably 5 or less, and more preferably 3 or less, so that it is not easy to discolor by wiping fingerprints.
本发明中获得绝缘层110的方法无特别限定,可以采用公知方法。例如可以如下:在因压纹(エンボス)加工而具有了凹凸形状的剥离膜表面涂布用于形成绝缘层110的树脂组成物并进行干燥,由此将剥离膜的凹凸形状转印到绝缘层110。可以使用下述方法:在屏蔽层120表面涂布含凹凸形成用粒子的树脂组成物并干燥,形成具有凹凸形状的绝缘层110。可以使用下述方法:向绝缘层110表面吹干冰等方法。可以使用下述方法:在屏蔽层120表面涂附活性能量射线固化型(活性エネルギー線硬化性)组成物后用具有凹凸形状的模具按压,使该固化型组成物层硬化,然后将模具剥离。还可用其他公知方法。In the present invention, the method for obtaining the insulating
其中,从生产性角度考虑,宜采用涂布含凹凸形成用粒子的树脂组成物并干燥以获得具有凹凸形状的绝缘层110的方法。此时,凹凸形成用粒子无特别限定,例如可用树脂微粒子或无机微粒子。树脂微粒子可用丙烯酸树脂微粒子、聚丙烯腈微粒子、聚氨酯微粒子、聚酰胺微粒子、聚酰亚胺微粒子等。无机微粒子可以使用碳酸钙微粒子、硅酸钙微粒子、黏土、高岭土、滑石、二氧化硅微粒子、玻璃微粒子、硅藻土、云母粉(雲母粉)、氧化铝微粒子、氧化镁微粒子、氧化锌微粒子、硫酸钡微粒子、硫酸铝微粒子、硫酸钙微粒子、硫酸镁微粒子等。上述树脂微粒子和无机微粒子可单独使用也可数种组合使用。从提高绝缘层耐擦伤性的角度来说优选无机微粒子。Among them, from the viewpoint of productivity, a method of applying a resin composition containing unevenness-forming particles and drying to obtain the insulating
从在绝缘层110表面产生适度凹凸以获得一定表面性状的角度来说,凹凸形成用粒子优选50%平均粒径在2μm以上,更优选4μm以上,更优选10μm以上。此外,从防止绝缘层白化(白色化)的角度来说,50%平均粒径优选30μm以下,更优选20μm以下。From the viewpoint of generating moderate irregularities on the surface of the insulating
从获得一定表面性状的角度来说,绝缘层110中凹凸形成用粒子的添加量优选3质量%以上,更优选5质量%以上。此外,从防止绝缘层白化的角度来说,优选30质量%以下,更优选20质量%以下,更优选17质量%以下。From the viewpoint of obtaining certain surface properties, the addition amount of the unevenness-forming particles in the insulating
绝缘层110中可以添加黑色着色剂(着色剤)。通过添加黑色着色剂(着色剤)能降低绝缘层110的L*值,使绝缘层表面印有的标记(文字、图形等)更易于辨识。绝缘层110上印的标记为白色时,优选L*值在25以下,更优选20以下,更优选18以下。本发明中L*值可以根据JIS Z 8781-4(2013)测定。A black colorant (colorant) may be added to the insulating
黑色着色剂(着色剤)可以是黑色颜料或数种颜料通过减色混合而黑色化的混合颜料等。黑色颜料例如可用碳黑、科琴炭黑(ケッチェンブラック)、碳纳米管(CNT)、苝黑(ペリレンブラック)、钛黑(チタンブラック)、铁黑、苯胺黑等中的一者或组合。混合颜料例如可以混合使用红色、绿色、蓝色、黄色、紫色、蓝绿色、品红色等颜料。The black colorant (colorant) may be a black pigment or a mixed pigment in which several pigments are blackened by subtractive color mixing, or the like. For example, black pigments can be used carbon black, ketjen black (ケッチェンブラック), carbon nanotube (CNT), perylene black (ペリレンブラック), titanium black (チタンブラック), iron black, aniline black, etc. one or a combination . Mixed pigments, for example, red, green, blue, yellow, violet, cyan, magenta and other pigments can be mixed and used.
黑色着色剂(着色剤)的粒径只要能实现所需要的L*值即可,但考虑到分散性、L*值的降低等,优选平均一次粒径(一次粒子径)在20nm以上,优选100nm以下。黑色着色剂(着色剤)的平均一次粒径(一次粒子径)可以从穿透电子显微镜(TEM)放大到5万倍~100万倍的图像中所能观察到的20个左右的一次粒子的平均值求得。The particle size of the black colorant (colorant) may be as long as the desired L* value can be achieved, but in consideration of dispersibility, reduction in the L* value, etc., the average primary particle size (primary particle size) is preferably 20 nm or more, preferably 100nm or less. The average primary particle size (primary particle size) of the black colorant (colorant) can be observed from a transmission electron microscope (TEM) image with a magnification of 50,000 times to 1,000,000 times. About 20 primary particles can be observed. Average value is obtained.
从缩小L*值的角度来说,优选绝缘层110中黑色着色剂(着色剤)的添加量为0.5质量%以上,更优选1质量%以上。根据需要,黑色着色剂(着色剤)可以添加也可以不添加。From the viewpoint of reducing the L* value, the addition amount of the black colorant (colorant) in the insulating
光泽度也会影响所印的内容的可视性。从所印的内容的可视性角度来说,绝缘层110的60°光泽度优选3以下,更优选2以下,更优选1以下。此外,85°光泽度优选20以下,更优选15以下,更优选10以下,更优选5以下,更优选3以下。Gloss also affects the visibility of printed content. From the viewpoint of the visibility of the printed content, the 60° glossiness of the insulating
优选地,绝缘层110除了具有所需要的绝缘性外还满足一定的机械强度、耐化学药品性、耐热性。Preferably, the insulating
构成绝缘层的树脂材料只要具有足够绝缘性即可,无特别限定,例如可用热塑性树脂组成物、热固化型树脂组成物、活性能量射线固化型(活性エネルギー線硬化性)组成物等。The resin material constituting the insulating layer is not particularly limited as long as it has sufficient insulating properties. For example, a thermoplastic resin composition, a thermosetting resin composition, an active energy ray-curable (active energy ray curable) composition, and the like can be used.
热塑性树脂组成物无特别限定,可用苯乙烯类树脂组成物、醋酸乙烯酯类树脂组成物、聚酯类树脂组成物、聚乙烯类树脂组成物、聚丙烯类树脂组成物、酰亚胺类树脂组成物、丙烯酸类树脂组成物等。热固化型树脂组成物无特别限定,可用苯酚类树脂组成物、环氧类树脂组成物、聚氨酯类树脂组成物、三聚氰胺类树脂组成物、醇酸树脂类树脂组成物等。活性能量射线固化型组成物(活性エネルギー線硬化性组成物)无特别限定,例如可用分子中至少有2个(甲基)丙烯酰氧基的聚合性化合物等。上述组成物可单用一种也可将2种以上组合使用。The thermoplastic resin composition is not particularly limited, and styrene-based resin compositions, vinyl acetate-based resin compositions, polyester-based resin compositions, polyethylene-based resin compositions, polypropylene-based resin compositions, and imide-based resin compositions can be used composition, acrylic resin composition, etc. The thermosetting resin composition is not particularly limited, and a phenol-based resin composition, an epoxy-based resin composition, a polyurethane-based resin composition, a melamine-based resin composition, an alkyd resin-based resin composition, etc. can be used. The active energy ray-curable composition (active ray curable composition) is not particularly limited, and for example, a polymerizable compound having at least two (meth)acryloyloxy groups in the molecule can be used. The above-mentioned compositions may be used alone or in combination of two or more.
此外,绝缘层110中除了上述微粒子、着色剂以外还可以根据需要含有固化促进剂(硬化促進剤)、增粘剂、抗氧化剂、颜料、染料、塑化剂、紫外线吸收剂、消泡剂、整平剂(レベリング剤)、填充剂、阻燃剂、粘度调节剂(粘度調節剤)、防粘连剂(ブロッキング防止剤)等。Further, the insulating
绝缘层110厚度无特别限定,可根据需要适当设定,从充分保护屏蔽层的角度来说优选1μm以上,更优选4μm以上。此外,从确保电磁波屏蔽膜弯曲性的角度来说,优选20μm以下,更优选10μm以下。The thickness of the insulating
-屏蔽层--Shield-
本实施方式的屏蔽层120可以是金属层。屏蔽层120可用镍、铜、银、锡、金、钯、铝、铬、钛、锌中的任一种或含其中两种以上的金属等制成的金属层。金属层的材质、厚度根据所要求的电磁波屏蔽效果以及反复弯曲·滑动耐性适当选择即可。从获得足够的电磁波屏蔽效果的角度来说,金属层厚度优选0.1μm以上。从生产性、弯曲性等角度考虑,优选8μm以下。金属层可通过下述方法形成:电镀法、无电镀(無電解メッキ)法、溅镀法、电子束蒸镀(電子ビーム蒸着)法、真空蒸镀法、CVD法、有机金属法等。此外金属层还可由金属箔、金属纳米粒子、鳞片状金属粒子等构成。The
-接着剂层--Adhesive layer-
本实施方式的电磁波屏蔽膜可以在屏蔽层120的与绝缘层110相反一侧含有接着剂层130。接着剂层130可由具有接着性的树脂组成物制成。接着性树脂组成物无特别限定,可用苯乙烯类树脂组成物、醋酸乙烯酯类树脂组成物、聚酯类树脂组成物、聚乙烯类树脂组成物、聚丙烯类树脂组成物、酰亚胺类树脂组成物、酰胺类树脂组成物、丙烯酸类树脂组成物等热塑性树脂组成物、苯酚类树脂组成物、环氧类树脂组成物、聚氨酯类树脂组成物、三聚氰胺类树脂组成物、醇酸树脂类树脂组成物等热固化型树脂组成物等。上述物质可单独使用一种也可组合使用两种以上。The electromagnetic wave shielding film of this embodiment may contain the
接着剂层130可根据需要设置成具有各向同性导电性或各向异性导电性层。要使接着剂层130成为各向同性或各向异性导电性层只要在接着性的树脂组成物中添加导电性微粒子即可。The
导电性微粒子无特别限定,可用金属微粒子、碳纳米管、碳纤维、金属纤维等。例如可用银粉、铜粉、镍粉、焊锡粉、铝粉等金属微粒子。还可用对铜粉镀银所得到的银包铜粉、高分子微粒子或玻璃微珠等被金属被覆所形成的金属被覆微粒子等。其中从经济性角度考虑,优选低价的铜粉或银包铜粉。The conductive fine particles are not particularly limited, and metal fine particles, carbon nanotubes, carbon fibers, metal fibers, and the like can be used. For example, metal fine particles such as silver powder, copper powder, nickel powder, solder powder, and aluminum powder can be used. Silver-coated copper powder obtained by silver-plating copper powder, polymer microparticles, glass microbeads, etc., are also metal-coated microparticles formed by coating with metal. Among them, low-priced copper powder or silver-coated copper powder is preferable from the viewpoint of economical efficiency.
导电性粒子的50%平均粒径无特别限定,从获得良好导电性的角度来说优选0.5μm以上。此外,从控制导电性接着剂层厚度的角度来说优选15μm以下。The 50% average particle diameter of the electroconductive particles is not particularly limited, but is preferably 0.5 μm or more from the viewpoint of obtaining good electroconductivity. Further, from the viewpoint of controlling the thickness of the conductive adhesive layer, it is preferably 15 μm or less.
导电性粒子形状无特别限定,可适当选择球状、扁平状、鳞片状、树枝状等。The shape of the conductive particles is not particularly limited, and a spherical shape, a flat shape, a scaly shape, a dendritic shape, and the like can be appropriately selected.
接着剂层130厚度可根据需要调整,从获得良好接着性的角度来说优选0.5μm以上。此外,从控制电磁波屏蔽膜厚度的角度来说优选20μm以下。The thickness of the
以上就电磁波屏蔽膜含有绝缘层110、屏蔽层120、接着剂层130的结构进行了说明,但也可采用图2所示结构,即含有绝缘层110、各向同性导电性接着剂层140。The electromagnetic wave shielding film including the insulating
绝缘层110可采用与图1电磁波屏蔽膜同样的结构。各向同性导电性接着剂层140可以由与接着剂层130同样的接着性树脂组成物及导电性微粒子构成。各向同性导电性接着剂层140作为屏蔽层发挥功能。The insulating
-屏蔽膜的制造方法--Manufacturing method of shielding film-
本实施方式的电磁波屏蔽膜可通过公知制造方法制造。以下说明其中一例。The electromagnetic wave shielding film of this embodiment can be manufactured by a well-known manufacturing method. One example will be described below.
首先,在表面进行了离型处理的支撑体膜上形成具有导电性的接着剂层130。具体来说,含用于构成接着剂层130的材料在内的接着剂层组成物溶液被涂布于支撑体膜的表面,干燥形成接着剂层130。First, the
然后,在接着剂层130表面形成屏蔽层120。具体来说可采用下述方法:将预先制成一定厚度的金属箔贴合在接着剂层130的方法、在接着剂层130表面通过蒸镀或金属镀层等方式形成金属层的方法。Then, the
然后,在屏蔽层120表面形成绝缘层110。具体来说可采用下述方法:将含用于构成绝缘层110的材料在内的绝缘层组成物溶液涂布于屏蔽层120表面并干燥的方法。Then, the insulating
然后,剥离支撑体膜就能获得电磁波屏蔽膜。Then, the electromagnetic wave shielding film can be obtained by peeling off the support film.
还可以用接着剂层130作为各向同性导电性接着剂层140并在各向同性导电性接着剂层140表面形成绝缘层110。The
为使绝缘层110表面的表面性状成为一定状态,还可以在绝缘层110表面进行喷砂等处理。In order to make the surface properties of the surface of the insulating
以上例示是从接着剂层130一侧开始制作,也可以从绝缘层110一侧开始依次制作。此时可采用如下方式:使用带有微小图形的支撑体膜,将微小图形转印到绝缘层110表面,由此使绝缘层110的表面性状成为一定状态。In the above example, the production is started from the
实施例Example
以下通过实施例详细说明本发明。以下实施例仅为例示对本发明没有限定作用。The present invention will be described in detail below by means of examples. The following examples are only illustrative and do not limit the present invention.
<电磁波屏蔽膜的制作><Production of electromagnetic wave shielding film>
-接着剂层的制作-- Production of Adhesive Layer -
向甲苯中添加双酚A型环氧类树脂(三菱化学生产、jER1256)100质量份、硬化剂(三菱化学生产、ST14)0.1质量份、树枝状的银包被铜粉(平均粒径13μm)25质量份,使固形成分量为20质量%,搅拌混合制备出导电性的接着剂层组成物。所得到的接着剂层组成物涂布在表面进行了离型处理的PET膜上,通过加热干燥在支撑膜表面形成接着剂层。100 parts by mass of bisphenol A epoxy resin (manufactured by Mitsubishi Chemical, jER1256), 0.1 part by mass of hardener (manufactured by Mitsubishi Chemical, ST14), and dendritic silver-coated copper powder (average particle size) were added to toluene. 13 μm) 25 parts by mass, the solid content was 20 mass %, and the mixture was stirred and mixed to prepare a conductive adhesive layer composition. The obtained adhesive layer composition was coated on the PET film whose surface was subjected to release treatment, and an adhesive layer was formed on the surface of the support film by heating and drying.
-屏蔽层的制作-- Production of shielding layer -
在所获得的接着剂层表面贴合厚度2μm的压延铜箔。Rolled copper foil with a thickness of 2 μm was bonded to the surface of the obtained adhesive layer.
-绝缘层的制作-- Production of insulating layer -
针对甲苯使用双酚A型环氧类树脂(三菱化学生产、jER1256)100质量份、作为硬化剂的(三菱化学生产、ST14)0.1质量份、作为黑色着色剂(着色剂)的碳粒子(东海碳素(TOKAICARBON)生产、TOKABLACK#8300/F)15质量份、以及一定量的一定凹凸形成用粒子,使得固形成分量为20质量%,制备绝缘层组成物。将该组成物涂布在所得到的屏蔽层上,加热干燥获得电磁波屏蔽膜。For toluene, 100 parts by mass of bisphenol A epoxy resin (manufactured by Mitsubishi Chemical, jER1256), 0.1 part by mass (manufactured by Mitsubishi Chemical, ST14) as a hardener, and carbon particles as a black colorant (colorant) (Tokai Carbon (TOKAICARBON), TOKABLACK #8300/F) 15 parts by mass, and a certain amount of particles for forming certain irregularities, so that the solid content is 20 mass %, to prepare an insulating layer composition. This composition was applied on the obtained shielding layer, and heated and dried to obtain an electromagnetic wave shielding film.
<特性评价方法><Characteristic evaluation method>
[绝缘层表面性状的测定][Measurement of Surface Properties of Insulating Layer]
用共聚焦显微镜(Lasertec公司生产、OPTELICS HYBRID、物镜20倍)测定电磁波屏蔽膜绝缘层表面的任意5处后,通过数据分析软件(LMeye7)进行表面倾斜补正(傾き補正),依据ISO 25178-6:2010测定表面性状,获得其算术平均值。S过滤器的截止波长为0.0025mm,L过滤器的截止波长为0.8mm。After measuring 5 arbitrary points on the surface of the insulating layer of the electromagnetic wave shielding film with a confocal microscope (produced by Lasertec, OPTELICS HYBRID,
[L*值的测定][Measurement of L* value]
用积分球式分光光度仪(積分球分光測色計)(X-Rite公司生产、Ci64、钨光源)测定L*值。并测定a*值、b*值。The L* value was measured with an integrating sphere spectrophotometer (integrating sphere spectrophotometer) (manufactured by X-Rite, Ci64, tungsten light source). And measured a* value, b* value.
[因指纹变色的评价][Evaluation of discoloration due to fingerprints]
直径2.5cm的橡胶栓表面用#240砂纸粗化。然后在PET膜表面滴下人工污染液(JISC9606:伊势久生产)5μL,将上述橡胶栓粗化后的面按压在人工污染液(500g承重、10秒钟)。然后将人工污染液所附着的橡胶栓按压在绝缘层表面(500g承重、10秒钟),使人工污染液附着。然后从无纺布(日本制纸珂蕾亚(NIPPON PAPER CRECIA)生产、WYPALLX70)裁出大约3cm角的大小,置于人工污染液之上,在500g承重下往返20次(单程距离=10cm),由此擦拭。擦拭后85°光泽度值减去人工污染液附着前的85°光泽度值所得到的值为85°光泽度差。60°光泽度和85°光泽度通过BYK Gardner・微型光泽度计(ガードナー・マイクロ-グロス)(便携式光泽度计)测定。The surface of the rubber plug with a diameter of 2.5cm is roughened with #240 sandpaper. Then, 5 μL of artificial contamination solution (JISC9606: manufactured by Isehisa) was dropped on the surface of the PET film, and the roughened surface of the rubber stopper was pressed against the artificial contamination solution (500 g load-bearing, 10 seconds). Then, press the rubber plug attached to the artificial contamination liquid on the surface of the insulating layer (500g load-bearing, 10 seconds) to make the artificial contamination liquid adhere. Then, cut out about 3cm angle from non-woven fabric (NIPPON PAPER CRECIA, WYPALLX70), put it on the artificial pollution solution, and reciprocate 20 times under 500g load (one-way distance = 10cm) , and wipe it accordingly. The value obtained by subtracting the 85° gloss value after wiping from the 85° gloss value before the attachment of the artificial contamination liquid is 85° poor gloss. The 60° gloss and the 85° gloss were measured by BYK Gardner Micro Gloss Meter (ガードナー・マイクロ-グロス) (portable gloss meter).
(实施例1)(Example 1)
加入绝缘层的凹凸形成用粒子用的是平均粒径7μm的二氧化硅粒子,使用量为40质量份。所获得的电磁波屏蔽膜绝缘层表面的Sa为1.02μm、Sdq为1.26、Ssk为2.22。人工污染液附着前的60°光泽度为1.1、指纹擦拭后的60°光泽度为5.2。人工污染液附着前的85°光泽度为1.5,指纹擦拭后的85°光泽度为1.9,85°光泽度差为0.4。L*值为21.3。Silica particles with an average particle diameter of 7 μm were used as the unevenness-forming particles added to the insulating layer, and the amount used was 40 parts by mass. Sa on the surface of the insulating layer of the electromagnetic wave shielding film obtained was 1.02 μm, Sdq was 1.26, and Ssk was 2.22. The 60° gloss before the artificial contamination solution was attached was 1.1, and the 60° gloss after the fingerprint was wiped was 5.2. The 85° glossiness before the artificial contamination solution is attached is 1.5, the 85° glossiness after fingerprint wiping is 1.9, and the 85° glossiness difference is 0.4. The L* value was 21.3.
(实施例2)(Example 2)
凹凸形成用粒子的使用量为50质量份,除此之外,与实施例1同样地得到电磁波屏蔽膜。所得到电磁波屏蔽膜绝缘层表面的Sa为1.18μm、Sdq为1.26、Ssk为2.21。人工污染液附着前的60°光泽度为0.5、指纹擦拭后的60°光泽度为6.7。人工污染液附着前的85°光泽度为1.8、指纹擦拭后的85°光泽度为2.4、85°光泽度差为0.6。L*值为20.1。An electromagnetic wave shielding film was obtained in the same manner as in Example 1, except that the used amount of the unevenness-forming particles was 50 parts by mass. The surface of the insulating layer of the electromagnetic wave shielding film obtained had Sa of 1.18 μm, Sdq of 1.26, and Ssk of 2.21. The 60° gloss before the artificial contamination solution was attached was 0.5, and the 60° gloss after the fingerprint was wiped was 6.7. The 85° gloss before the artificial contamination solution is attached is 1.8, the 85° gloss after the fingerprint is wiped is 2.4, and the 85° gloss difference is 0.6. The L* value was 20.1.
(实施例3)(Example 3)
凹凸形成用粒子的使用量为35质量份,除此之外,与实施例1同样地获得电磁波屏蔽膜。所获得的电磁波屏蔽膜的绝缘层表面的Sa为1.31μm、Sdq为0.95、Ssk为1.47。人工污染液附着前的60°光泽度为0.5、指纹擦拭后的60°光泽度为1.8。人工污染液附着前的85°光泽度为1.7、指纹擦拭后的85°光泽度为2.5、85°光泽度差为0.8。L*值为、20.1。An electromagnetic wave shielding film was obtained in the same manner as in Example 1, except that the used amount of the unevenness-forming particles was 35 parts by mass. The surface of the insulating layer of the obtained electromagnetic wave shielding film had Sa of 1.31 μm, Sdq of 0.95, and Ssk of 1.47. The 60° gloss before the artificial contamination solution was attached was 0.5, and the 60° gloss after the fingerprint was wiped was 1.8. The 85° gloss before the artificial contamination solution is attached is 1.7, the 85° gloss after fingerprint wiping is 2.5, and the 85° gloss difference is 0.8. The L* value is 20.1.
(实施例4)(Example 4)
凹凸形成用粒子使用的是平均粒径9μm的二氧化硅粒子,使用量为40质量份,除此之外,与实施例1同样地获得电磁波屏蔽膜。所获得的电磁波屏蔽膜绝缘层表面的Sa为0.92μm、Sdq为1.38、Ssk为3.10。人工污染液附着前的60°光泽度为2.1、指纹擦拭后为60°光泽度为6.1。人工污染液附着前的85°光泽度为2.1、指纹擦拭后的85°光泽度为2.6、85°光泽度差为0.5。L*值为23.5。An electromagnetic wave shielding film was obtained in the same manner as in Example 1, except that silica particles having an average particle diameter of 9 μm were used and the used amount was 40 parts by mass. Sa on the surface of the insulating layer of the electromagnetic wave shielding film obtained was 0.92 μm, Sdq was 1.38, and Ssk was 3.10. The 60° gloss before the artificial contamination solution is attached is 2.1, and the 60° gloss after the fingerprint is wiped is 6.1. The 85° gloss before the artificial contamination solution is attached is 2.1, the 85° gloss after the fingerprint is wiped is 2.6, and the 85° gloss difference is 0.5. The L* value was 23.5.
(实施例5)(Example 5)
凹凸形成用粒子的使用量为50质量份,除此之外,与实施例4同样地获得电磁波屏蔽膜。所获得的电磁波屏蔽膜绝缘层表面的Sa为0.92μm、Sdq为1.02、Ssk为2.53。人工污染液附着前的60°光泽度为1.5、指纹擦拭后的60°光泽度为4.9。人工污染液附着前的85°光泽度为1.7、指纹擦拭后的85°光泽度为3.2、85°光泽度差为1.5。L*值为、24.3。An electromagnetic wave shielding film was obtained in the same manner as in Example 4, except that the used amount of the unevenness-forming particles was 50 parts by mass. Sa on the surface of the insulating layer of the electromagnetic wave shielding film obtained was 0.92 μm, Sdq was 1.02, and Ssk was 2.53. The 60° gloss before the artificial contamination solution was attached was 1.5, and the 60° gloss after the fingerprint was wiped was 4.9. The 85° gloss before the artificial contamination solution is attached is 1.7, the 85° gloss after the fingerprint is wiped is 3.2, and the 85° gloss difference is 1.5. The L* value is 24.3.
(实施例6)(Example 6)
凹凸形成用粒子使用的是平均粒径5μm的二氧化硅粒子,使用量为70质量份,除此之外,与实施例1同样地获得电磁波屏蔽膜。所获得的电磁波屏蔽膜的绝缘层表面的Sa为1.05μm、Sdq为0.92、Ssk为0.80。人工污染液附着前的60°光泽度为0.5、指纹擦拭后的60°光泽度为2.4。人工污染液附着前的85°光泽度为4.6、指纹擦拭后的85°光泽度为6.3、85°光泽度差为1.7。L*值为、23.6。An electromagnetic wave shielding film was obtained in the same manner as in Example 1, except that silica particles having an average particle diameter of 5 μm were used and the used amount was 70 parts by mass. The surface of the insulating layer of the obtained electromagnetic wave shielding film had Sa of 1.05 μm, Sdq of 0.92, and Ssk of 0.80. The 60° gloss before the artificial contamination solution was attached was 0.5, and the 60° gloss after the fingerprint was wiped was 2.4. The 85° gloss before the artificial contamination solution is attached is 4.6, the 85° gloss after the fingerprint is wiped is 6.3, and the 85° gloss difference is 1.7. The L* value is 23.6.
(实施例7)(Example 7)
凹凸形成用粒子使用的是平均粒径7μm的二氧化硅粒子,使用量为60质量份,除此之外,与实施例1同样地获得电磁波屏蔽膜。所获得的电磁波屏蔽膜的绝缘层表面的Sa为1.11μm、Sdq为1.12、Ssk为1.46。人工污染液附着前的60°光泽度为0.4、指纹擦拭后的60°光泽度为1.9。人工污染液附着前的85°光泽度为3.8、指纹擦拭后的85°光泽度为6.5、85°光泽度差为2.7。L*值为21.9。An electromagnetic wave shielding film was obtained in the same manner as in Example 1, except that silica particles having an average particle diameter of 7 μm were used and the used amount was 60 parts by mass. The surface of the insulating layer of the obtained electromagnetic wave shielding film had Sa of 1.11 μm, Sdq of 1.12, and Ssk of 1.46. The 60° gloss before the artificial contamination solution was attached was 0.4, and the 60° gloss after the fingerprint was wiped was 1.9. The 85° gloss before the artificial contamination solution is attached is 3.8, the 85° gloss after the fingerprint is wiped is 6.5, and the 85° gloss difference is 2.7. The L* value was 21.9.
(比较例1)(Comparative Example 1)
将平均粒径2μm的二氧化硅粒子用作凹凸形成用粒子,将使用量设为60质量份,除此之外,与实施例1同样地获得了电磁波屏蔽膜。所获得的电磁波屏蔽膜的绝缘层表面的Sa为0.57μm,Sdq为0.80,Ssk为0.07。人工污染液附着前的60°光泽度为0.8,指纹擦拭后的60°光泽度为2.2。人工污染液附着前的85°光泽度为16.8,指纹擦拭后的85°光泽度为26.7,85°光泽度差为9.9。L*值为24.4。An electromagnetic wave shielding film was obtained in the same manner as in Example 1, except that silica particles having an average particle diameter of 2 μm were used as the particles for forming concavities and convexities, and the usage amount was 60 parts by mass. Sa of the insulating layer surface of the obtained electromagnetic wave shielding film was 0.57 μm, Sdq was 0.80, and Ssk was 0.07. The 60° gloss before the artificial contamination solution was attached was 0.8, and the 60° gloss after the fingerprint was wiped was 2.2. The 85° glossiness before the artificial contamination solution is attached is 16.8, the 85° glossiness after fingerprint wiping is 26.7, and the 85° glossiness difference is 9.9. The L* value was 24.4.
(比较例2)(Comparative Example 2)
除将凹凸形成用粒子的使用量设为65质量份以外、与比较例1同样地获得了电磁波屏蔽膜。所获得的电磁波屏蔽膜的绝缘层表面的Sa为0.66μm,Sdq为0.90,Ssk为-0.22。人工污染液附着前的60°光泽度为0.5,指纹擦拭后的60°光泽度为3.9。人工污染液附着前的85°光泽度为15.9,指纹擦拭后的85°光泽度为30.4,85°光泽度差为14.5。L*值为21.9。An electromagnetic wave shielding film was obtained in the same manner as in Comparative Example 1, except that the used amount of the unevenness-forming particles was 65 parts by mass. Sa on the surface of the insulating layer of the obtained electromagnetic wave shielding film was 0.66 μm, Sdq was 0.90, and Ssk was −0.22. The 60° gloss before the artificial contamination solution was attached was 0.5, and the 60° gloss after the fingerprint was wiped was 3.9. The 85° glossiness before the artificial contamination solution is attached is 15.9, the 85° glossiness after fingerprint wiping is 30.4, and the 85° glossiness difference is 14.5. The L* value was 21.9.
(比较例3)(Comparative Example 3)
制备了不含凹凸形成用粒子的绝缘层组成物。将其涂布于支撑体膜的表面、让其干燥硬化、获得了绝缘层。支撑体膜为表面由于压纹(エンボス)加工而具有了凹凸形状(Sa=0.60μm、Sdq=0.61)的、厚度20μm的经过离型处理的PET膜。接下来、将绝缘层贴合于与实施例1同样地制作的屏蔽层之后、剥离支撑体膜获得了电磁波屏蔽膜。所获得的电磁波屏蔽膜的绝缘层表面的Sa为0.58μm,Sdq为0.65,Ssk为-0.78。人工污染液附着前的60°光泽度为4.2,指纹擦拭后的60°光泽度为9.1。人工污染液附着前的85°光泽度为34.0,指纹擦拭后的85°光泽度为42.8,85°光泽度差为8.8。L*值为25.3。An insulating layer composition containing no unevenness-forming particles was prepared. This was apply|coated to the surface of a support body film, it was made to dry and harden, and the insulating layer was obtained. The support film was a release-treated PET film having a thickness of 20 μm and having a concavo-convex shape (Sa=0.60 μm, Sdq=0.61) on the surface by embossing. Next, after bonding the insulating layer to the shielding layer produced in the same manner as in Example 1, the support film was peeled off to obtain an electromagnetic wave shielding film. Sa on the surface of the insulating layer of the obtained electromagnetic wave shielding film was 0.58 μm, Sdq was 0.65, and Ssk was −0.78. The 60° gloss before the artificial contamination solution was attached was 4.2, and the 60° gloss after the fingerprint was wiped was 9.1. The 85° gloss before the artificial contamination solution is attached is 34.0, the 85° gloss after fingerprint wiping is 42.8, and the 85° gloss difference is 8.8. The L* value was 25.3.
(比较例4)(Comparative Example 4)
除了将使用二氧化硅微粒子使得表面具有了凹凸形状(Sa=0.6μm、Sdq=0.47μm)的膜用作支撑体膜以外,与比较例3同样地获得了电磁波屏蔽膜。所获得的电磁波屏蔽膜的绝缘层表面的Sa为0.59μm,Sdq为0.49,Ssk为-0.85。人工污染液附着前的60°光泽度为7.6,指纹擦拭后的60°光泽度为13.3。人工污染液附着前的85°光泽度为38.7,指纹擦拭后的85°光泽度为48.0,85°光泽度差为9.3。L*值为28.2。An electromagnetic wave shielding film was obtained in the same manner as in Comparative Example 3, except that a film having an uneven surface (Sa=0.6 μm, Sdq=0.47 μm) using silica fine particles was used as a support film. Sa of the insulating layer surface of the obtained electromagnetic wave shielding film was 0.59 micrometer, Sdq was 0.49, and Ssk was -0.85. The 60° gloss before the artificial contamination solution was attached was 7.6, and the 60° gloss after the fingerprint was wiped was 13.3. The 85° glossiness before the artificial contamination solution was attached was 38.7, the 85° glossiness after fingerprint wiping was 48.0, and the 85° glossiness difference was 9.3. The L* value was 28.2.
(比较例5)(Comparative Example 5)
除了将通过砂垫层(サンドマット)加工而使得表面具有了凹凸形状(Sa=0.47μm、Sdq=0.59μm)的膜用作支撑体膜以外,与比较例3同样地获得了电磁波屏蔽膜。所获得的电磁波屏蔽膜的绝缘层表面的Sa为0.45μm,Sdq为0.58,Ssk为-0.25。人工污染液附着前的60°光泽度为5.4,指纹擦拭后的60°光泽度为11.9。人工污染液附着前的85°光泽度为26.1,指纹擦拭后的85°光泽度为51.0,85°光泽度差为24.9。L*值为27.2。Electromagnetic wave shielding was obtained in the same manner as in Comparative Example 3, except that a film having an uneven surface (Sa = 0.47 μm, Sdq = 0.59 μm) by sanding was used as a support film membrane. Sa on the surface of the insulating layer of the obtained electromagnetic wave shielding film was 0.45 μm, Sdq was 0.58, and Ssk was −0.25. The 60° gloss before the artificial contamination solution was attached was 5.4, and the 60° gloss after the fingerprint was wiped was 11.9. The 85° glossiness before the artificial contamination solution was attached was 26.1, the 85° glossiness after fingerprint wiping was 51.0, and the 85° glossiness difference was 24.9. The L* value was 27.2.
(比较例6)(Comparative Example 6)
除了将通过砂垫层(サンドマット)加工而使得表面具有了凹凸形状(Sa=0.45μm、Sdq=0.56μm)的膜用作支撑体膜以外,与比较例3同样地获得了电磁波屏蔽膜。所获得的电磁波屏蔽膜的绝缘层表面的Sa为0.45μm,Sdq为0.54,Ssk为-0.60。人工污染液附着前的60°光泽度为9.2,指纹擦拭后的60°光泽度为16.6。人工污染液附着前的85°光泽度为30.4,指纹擦拭后的85°光泽度为54.7,85°光泽度差为24.3。L*值为27.2。Electromagnetic wave shielding was obtained in the same manner as in Comparative Example 3, except that a film having an uneven surface (Sa = 0.45 μm, Sdq = 0.56 μm) by sanding was used as a support film membrane. Sa of the insulating layer surface of the obtained electromagnetic wave shielding film was 0.45 micrometer, Sdq was 0.54, and Ssk was -0.60. The 60° gloss before the artificial contamination solution was attached was 9.2, and the 60° gloss after the fingerprint was wiped was 16.6. The 85° glossiness before the artificial contamination solution is attached is 30.4, the 85° glossiness after fingerprint wiping is 54.7, and the 85° glossiness difference is 24.3. The L* value was 27.2.
(比较例7)(Comparative Example 7)
除了将通过砂垫层(サンドマット)加工而使得表面具有了凹凸形状(Sa=0.51μm、Sdq=0.55μm)的膜用作支撑体膜以外,与比较例3同样地获得了电磁波屏蔽膜。所获得的电磁波屏蔽膜的绝缘层表面的Sa为0.49μm,Sdq为0.55,Ssk为-0.37。人工污染液附着前的60°光泽度为8.6,指纹擦拭后的60°光泽度为16.7。人工污染液附着前的85°光泽度为21.6,指纹擦拭后的85°光泽度为56.7,85°光泽度差为35.1。L*值为27.2。Electromagnetic wave shielding was obtained in the same manner as in Comparative Example 3, except that a film having a concavo-convex shape (Sa=0.51 μm, Sdq=0.55 μm) on the surface by sanding was used as a support film membrane. Sa on the surface of the insulating layer of the obtained electromagnetic wave shielding film was 0.49 μm, Sdq was 0.55, and Ssk was −0.37. The 60° gloss before the artificial contamination solution was attached was 8.6, and the 60° gloss after the fingerprint was wiped was 16.7. The 85° glossiness before the artificial contamination solution is attached is 21.6, the 85° glossiness after fingerprint wiping is 56.7, and the 85° glossiness difference is 35.1. The L* value was 27.2.
(比较例8)(Comparative Example 8)
除了将使用二氧化硅微粒子使得表面具有了凹凸形状(Sa=0.43μm、Sdq=0.40μm)的膜用作支撑体膜以外,与比较例3同样地获得了电磁波屏蔽膜。所获得的电磁波屏蔽膜的绝缘层表面的Sa为0.42μm,Sdq为0.38μm,Ssk为-1.19。人工污染液附着前的60°光泽度为11.7,指纹擦拭后的60°光泽度为17.9。人工污染液附着前的85°光泽度为52.4,指纹擦拭后的85°光泽度为58.9,85°光泽度差为6.5。L*值为27.9。An electromagnetic wave shielding film was obtained in the same manner as in Comparative Example 3, except that a film having an uneven surface (Sa=0.43 μm, Sdq=0.40 μm) using silica fine particles was used as a support film. Sa on the surface of the insulating layer of the obtained electromagnetic wave shielding film was 0.42 μm, Sdq was 0.38 μm, and Ssk was −1.19. The 60° gloss before the artificial contamination solution was attached was 11.7, and the 60° gloss after the fingerprint was wiped was 17.9. The 85° glossiness before the artificial contamination solution is attached is 52.4, the 85° glossiness after fingerprint wiping is 58.9, and the 85° glossiness difference is 6.5. The L* value was 27.9.
(比较例9)(Comparative Example 9)
将平均粒径5μm的二氧化硅粒子用作加于绝缘层的粒子,将使用量设为40质量份,除此以外与实施例1同样地获得了电磁波屏蔽膜。所获得的电磁波屏蔽膜的绝缘层表面的Sa为0.49μm,Sdq为0.74,Ssk为-0.77。人工污染液附着前的60°光泽度为1.0,指纹擦拭后的60°光泽度为19.8。人工污染液附着前的85°光泽度为33.2,指纹擦拭后的85°光泽度为61.0,85°光泽度差为27.8。L*值为22.0。An electromagnetic wave shielding film was obtained in the same manner as in Example 1, except that silica particles having an average particle diameter of 5 μm were used as particles to be added to the insulating layer, and the usage amount was 40 parts by mass. Sa of the insulating layer surface of the obtained electromagnetic wave shielding film was 0.49 μm, Sdq was 0.74, and Ssk was −0.77. The 60° gloss before the artificial contamination solution was attached was 1.0, and the 60° gloss after the fingerprint was wiped was 19.8. The 85° glossiness before the artificial contamination solution is attached is 33.2, the 85° glossiness after fingerprint wiping is 61.0, and the 85° glossiness difference is 27.8. The L* value was 22.0.
(比较例10)(Comparative Example 10)
除了将使用二氧化硅微粒子使得表面具有了凹凸形状(Sa=0.36μm、Sdq=0.36μm)的膜用作支撑体膜以外,与比较例3同样地获得了电磁波屏蔽膜。所获得的电磁波屏蔽膜的绝缘层表面的Sa为0.35μm,Sdq为0.36,Ssk为-0.31。人工污染液附着前的60°光泽度为6.9,指纹擦拭后的60°光泽度为12.1。人工污染液附着前的85°光泽度为58.6,指纹擦拭后的85°光泽度为63.0,85°光泽度差为4.4。L*值为26.3。An electromagnetic wave shielding film was obtained in the same manner as in Comparative Example 3, except that a film having an uneven surface (Sa=0.36 μm, Sdq=0.36 μm) using silica fine particles was used as a support film. Sa on the surface of the insulating layer of the obtained electromagnetic wave shielding film was 0.35 μm, Sdq was 0.36, and Ssk was −0.31. The 60° gloss before the artificial contamination solution was attached was 6.9, and the 60° gloss after the fingerprint was wiped was 12.1. The 85° gloss before the artificial contamination solution is attached is 58.6, the 85° gloss after fingerprint wiping is 63.0, and the 85° gloss difference is 4.4. The L* value was 26.3.
(比较例11)(Comparative Example 11)
除了将使用二氧化硅微粒子使得表面具有了凹凸形状(Sa=0.46μm、Sdq=0.65μm)的膜用作支撑体膜以外,与比较例3同样地获得了电磁波屏蔽膜。所获得的电磁波屏蔽膜的绝缘层表面的Sa为0.43μm,Sdq为0.62,Ssk为-0.40。人工污染液附着前的60°光泽度为2.4,指纹擦拭后的60°光泽度为16.6。人工污染液附着前的85°光泽度为42.6,指纹擦拭后的85°光泽度为71.8,85°光泽度差为29.2。L*值为28.2。An electromagnetic wave shielding film was obtained in the same manner as in Comparative Example 3, except that a film having an uneven surface (Sa=0.46 μm, Sdq=0.65 μm) using silica fine particles was used as a support film. Sa of the insulating layer surface of the obtained electromagnetic wave shielding film was 0.43 micrometer, Sdq was 0.62, and Ssk was -0.40. The 60° gloss before the artificial contamination solution was attached was 2.4, and the 60° gloss after the fingerprint was wiped was 16.6. The 85° glossiness before the artificial contamination solution is attached is 42.6, the 85° glossiness after fingerprint wiping is 71.8, and the 85° glossiness difference is 29.2. The L* value was 28.2.
(比较例12)(Comparative Example 12)
除了将使用二氧化硅微粒子使得表面具有了凹凸形状(Sa=0.31μm、Sdq=0.58μm)的膜用作支撑体膜以外,与比较例3同样地获得了电磁波屏蔽膜。所获得的电磁波屏蔽膜的绝缘层表面的Sa为0.34μm,Sdq为0.55,Ssk为-0.48。人工污染液附着前的60°光泽度为4.3,指纹擦拭后的60°光泽度为30.2。人工污染液附着前的85°光泽度为64.2,指纹擦拭后的85°光泽度为80.6,85°光泽度差为16.4。L*值为24.4。An electromagnetic wave shielding film was obtained in the same manner as in Comparative Example 3, except that a film having an uneven surface (Sa=0.31 μm, Sdq=0.58 μm) using silica fine particles was used as a support film. Sa on the surface of the insulating layer of the obtained electromagnetic wave shielding film was 0.34 μm, Sdq was 0.55, and Ssk was −0.48. The 60° gloss before the artificial contamination solution was attached was 4.3, and the 60° gloss after the fingerprint was wiped was 30.2. The 85° glossiness before the artificial contamination solution is attached is 64.2, the 85° glossiness after fingerprint wiping is 80.6, and the 85° glossiness difference is 16.4. The L* value was 24.4.
(比较例13)(Comparative Example 13)
除了将通过压纹(エンボス)加工使得表面具有了凹凸形状(Sa=1.5μm、Sdq=4.89μm)的PET膜用作支撑体膜以外,与比较例3同样地在支撑体膜的表面涂布绝缘层并让其干燥硬化。接下来,将绝缘层贴合于与实施例1同样地制作的屏蔽层。接着,在要剥离支撑体膜时、支撑体膜和绝缘层牢固地贴着、在一部分产生了绝缘层/屏蔽层的界面破损。未看到界面破损的绝缘层表面的Sa为1.3μm,Sdq为3.6,Ssk为-1.60。另外,由于本比较例中产生了界面破损,未测定光泽度和L*值。The surface of the support film was prepared in the same manner as in Comparative Example 3, except that a PET film having an uneven surface (Sa = 1.5 μm, Sdq = 4.89 μm) by embossing was used as the support film. Apply the insulating layer and let it dry and harden. Next, the insulating layer was bonded to the shield layer produced in the same manner as in Example 1. Next, when the support film was to be peeled off, the support film and the insulating layer were firmly attached, and the interface between the insulating layer and the shielding layer was partially damaged. Sa on the surface of the insulating layer where interface damage was not observed was 1.3 μm, Sdq was 3.6, and Ssk was −1.60. In addition, since interface breakage occurred in this comparative example, glossiness and L* value were not measured.
在表1表示各实施例和比较例的电磁波屏蔽膜的表面性状以及变色的评价。在表1中也表示Sp、Sq、Spk、Vvc、Vmp、a*和b*的值。Table 1 shows the evaluation of the surface properties and discoloration of the electromagnetic wave shielding films of the respective Examples and Comparative Examples. The values of Sp, Sq, Spk, Vvc, Vmp, a* and b* are also shown in Table 1.
【表1】【Table 1】
图3表示Sdq和85°光泽度的关系。至少当Sdq在0.8以上且85°光泽度在10以下时,光泽度差在4以下,不易由于指纹的擦拭而产生变色。Figure 3 shows the relationship between Sdq and 85° gloss. At least when Sdq is more than 0.8 and the gloss at 85° is less than 10, the gloss difference is less than 4, and it is not easy to cause discoloration due to wiping of fingerprints.
图4表示Ssk和85°光泽度的关系。至少当Ssk在0.1以上且85°光泽度在10以下时,光泽度差在4以下,不易由于指纹的擦拭而产生变色。Figure 4 shows the relationship between Ssk and 85° gloss. At least when the Ssk is 0.1 or more and the 85° gloss is 10 or less, the gloss difference is 4 or less, and it is difficult to cause discoloration due to wiping of fingerprints.
实用性practicality
本发明的电磁波屏蔽膜不易因擦拭指纹而变色,作为印制布线板等的电磁波屏蔽膜是有用的。The electromagnetic wave shielding film of the present invention is less likely to be discolored by wiping off fingerprints, and is useful as an electromagnetic wave shielding film of a printed wiring board or the like.
符号说明Symbol Description
110 绝缘层110 Insulation layer
120 屏蔽层120 shield
130 接着剂层130 Adhesive layer
140 各向同性导电性接着剂层140 Isotropic conductive adhesive layer
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| Publication number | Priority date | Publication date | Assignee | Title |
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Families Citing this family (17)
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|---|---|---|---|---|
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| TWI799134B (en) * | 2022-02-11 | 2023-04-11 | 長春石油化學股份有限公司 | Polymer film and uses of the same |
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| JP7561809B2 (en) * | 2022-11-09 | 2024-10-04 | artience株式会社 | Electromagnetic wave shielding sheet, printed wiring board, and electronic device |
Citations (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1522457A (en) * | 2001-06-27 | 2004-08-18 | 应用材料公司 | Process chamber components with textured interior surfaces and methods of manufacture |
| US20070291463A1 (en) * | 2005-02-25 | 2007-12-20 | Dai Nippon Printing Co., Ltd. | Electromagnetic Wave Shielding Filter |
| CN101160674A (en) * | 2005-03-17 | 2008-04-09 | 杜邦帝人薄膜美国有限公司 | Composite films for optoelectronic and electronic devices |
| JP2011009267A (en) * | 2009-06-23 | 2011-01-13 | Hitachi Cable Ltd | Copper foil for printed wiring board, and method of manufacturing the same |
| JP2011099744A (en) * | 2009-11-05 | 2011-05-19 | Nippon Paint Co Ltd | Fingerprint-proof evaluation method and fingerprint-proof film |
| JP2012167355A (en) * | 2011-02-16 | 2012-09-06 | Jfe Steel Corp | Surface-treated steel sheet, electromagnetic wave shielding member, and electromagnetic wave shielding case |
| CN103080385A (en) * | 2010-08-30 | 2013-05-01 | Ak钢铁产权公司 | Galvanized carbon steel with stainless steel-like finish |
| CN103314652A (en) * | 2012-01-17 | 2013-09-18 | 松下电器产业株式会社 | Wiring substrate and production method therefor |
| CN103688343A (en) * | 2011-03-07 | 2014-03-26 | 恩特格里公司 | Chemical mechanical planarization pad conditioner |
| CN103811654A (en) * | 2012-11-15 | 2014-05-21 | 纳米新能源(唐山)有限责任公司 | Piezoelectric cable having piezoelectric effect and manufacturing method and application thereof |
| CN204087849U (en) * | 2014-08-13 | 2015-01-07 | 卜汝雪 | A kind of cable with superhigh shielded performance |
| CN204869869U (en) * | 2015-04-28 | 2015-12-16 | 比亚迪股份有限公司 | Prevent fingerprint casing |
| JP2016018068A (en) * | 2014-07-08 | 2016-02-01 | 旭硝子株式会社 | Base material and article with antiglare film |
| CN205030048U (en) * | 2015-10-25 | 2016-02-10 | 东莞市导谷电子材料科技有限公司 | A new type of soft electromagnetic wave shielding film |
| JP2016054259A (en) * | 2014-09-04 | 2016-04-14 | 信越ポリマー株式会社 | Electromagnetic wave shielding film and method for producing flexible printed wiring board with electromagnetic wave shielding film |
| JP2016054261A (en) * | 2014-09-04 | 2016-04-14 | 信越ポリマー株式会社 | Electromagnetic wave shielding film and method for producing flexible printed wiring board with electromagnetic wave shielding film |
| WO2016104420A1 (en) * | 2014-12-25 | 2016-06-30 | 住友電気工業株式会社 | Substrate for printed wiring board and method for manufacturing same, printed wiring board and method for manufacturing same, and resin base material |
| CN105848407A (en) * | 2015-02-02 | 2016-08-10 | 东洋油墨Sc控股株式会社 | Electromagnetic shielding sheets, printed wiring boards, and electronic equipment |
| JP2016150473A (en) * | 2015-02-16 | 2016-08-22 | リンテック株式会社 | Rough-surfaced film and production method therefor |
| CN105907287A (en) * | 2016-05-16 | 2016-08-31 | 四川龙华光电薄膜股份有限公司 | Anti-ultraviolet anti-glare anti-fingerprint hardness-increasing coating liquid composition, coating and preparation method of coating |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4201548B2 (en) | 2002-07-08 | 2008-12-24 | タツタ電線株式会社 | SHIELD FILM, SHIELD FLEXIBLE PRINTED WIRING BOARD AND METHOD FOR PRODUCING THEM |
| CN103120042B (en) * | 2010-06-23 | 2016-03-23 | 印可得株式会社 | The preparation method of electromagnetic shielding film and electromagnetic shielding film prepared therefrom |
| JP6010945B2 (en) * | 2012-03-16 | 2016-10-19 | 住友ベークライト株式会社 | Dicing film |
| CN104002515B (en) * | 2013-02-25 | 2016-08-03 | 南亚塑胶工业股份有限公司 | Composite double-sided black copper foil and manufacturing method thereof |
| EP2990838B1 (en) * | 2013-04-24 | 2018-12-12 | AGC Inc. | Substrate having antireflective layer |
| WO2015053274A1 (en) | 2013-10-11 | 2015-04-16 | リンテック株式会社 | Process sheet |
| JP5796690B1 (en) * | 2015-02-02 | 2015-10-21 | 東洋インキScホールディングス株式会社 | Electromagnetic shielding sheet and printed wiring board |
| CN105246313B (en) * | 2015-09-29 | 2018-07-27 | 朱春芳 | A kind of electromagnetic shielding film, the preparation method containing the printed wiring board of the screened film and the wiring board |
| JP6621487B2 (en) * | 2016-02-12 | 2019-12-18 | タツタ電線株式会社 | Electromagnetic shielding film |
-
2017
- 2017-09-06 CN CN201710796140.8A patent/CN107801366B/en active Active
- 2017-09-06 KR KR1020170113944A patent/KR102394462B1/en active Active
- 2017-09-06 CN CN202010489806.7A patent/CN111818784B/en active Active
- 2017-09-06 CN CN202010489211.1A patent/CN111800997B/en active Active
- 2017-09-06 JP JP2017171417A patent/JP6783205B2/en active Active
-
2020
- 2020-10-21 JP JP2020176728A patent/JP7083880B2/en active Active
-
2022
- 2022-04-29 KR KR1020220053435A patent/KR102567422B1/en active Active
Patent Citations (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1522457A (en) * | 2001-06-27 | 2004-08-18 | 应用材料公司 | Process chamber components with textured interior surfaces and methods of manufacture |
| US20070291463A1 (en) * | 2005-02-25 | 2007-12-20 | Dai Nippon Printing Co., Ltd. | Electromagnetic Wave Shielding Filter |
| CN101160674A (en) * | 2005-03-17 | 2008-04-09 | 杜邦帝人薄膜美国有限公司 | Composite films for optoelectronic and electronic devices |
| JP2011009267A (en) * | 2009-06-23 | 2011-01-13 | Hitachi Cable Ltd | Copper foil for printed wiring board, and method of manufacturing the same |
| JP2011099744A (en) * | 2009-11-05 | 2011-05-19 | Nippon Paint Co Ltd | Fingerprint-proof evaluation method and fingerprint-proof film |
| CN103080385A (en) * | 2010-08-30 | 2013-05-01 | Ak钢铁产权公司 | Galvanized carbon steel with stainless steel-like finish |
| JP2012167355A (en) * | 2011-02-16 | 2012-09-06 | Jfe Steel Corp | Surface-treated steel sheet, electromagnetic wave shielding member, and electromagnetic wave shielding case |
| CN103688343A (en) * | 2011-03-07 | 2014-03-26 | 恩特格里公司 | Chemical mechanical planarization pad conditioner |
| CN103314652A (en) * | 2012-01-17 | 2013-09-18 | 松下电器产业株式会社 | Wiring substrate and production method therefor |
| CN103811654A (en) * | 2012-11-15 | 2014-05-21 | 纳米新能源(唐山)有限责任公司 | Piezoelectric cable having piezoelectric effect and manufacturing method and application thereof |
| JP2016018068A (en) * | 2014-07-08 | 2016-02-01 | 旭硝子株式会社 | Base material and article with antiglare film |
| CN105319616A (en) * | 2014-07-08 | 2016-02-10 | 旭硝子株式会社 | Anti-dazzle film substrate and article |
| CN204087849U (en) * | 2014-08-13 | 2015-01-07 | 卜汝雪 | A kind of cable with superhigh shielded performance |
| JP2016054259A (en) * | 2014-09-04 | 2016-04-14 | 信越ポリマー株式会社 | Electromagnetic wave shielding film and method for producing flexible printed wiring board with electromagnetic wave shielding film |
| JP2016054261A (en) * | 2014-09-04 | 2016-04-14 | 信越ポリマー株式会社 | Electromagnetic wave shielding film and method for producing flexible printed wiring board with electromagnetic wave shielding film |
| WO2016104420A1 (en) * | 2014-12-25 | 2016-06-30 | 住友電気工業株式会社 | Substrate for printed wiring board and method for manufacturing same, printed wiring board and method for manufacturing same, and resin base material |
| CN105848407A (en) * | 2015-02-02 | 2016-08-10 | 东洋油墨Sc控股株式会社 | Electromagnetic shielding sheets, printed wiring boards, and electronic equipment |
| JP2016150473A (en) * | 2015-02-16 | 2016-08-22 | リンテック株式会社 | Rough-surfaced film and production method therefor |
| CN204869869U (en) * | 2015-04-28 | 2015-12-16 | 比亚迪股份有限公司 | Prevent fingerprint casing |
| CN205030048U (en) * | 2015-10-25 | 2016-02-10 | 东莞市导谷电子材料科技有限公司 | A new type of soft electromagnetic wave shielding film |
| CN105907287A (en) * | 2016-05-16 | 2016-08-31 | 四川龙华光电薄膜股份有限公司 | Anti-ultraviolet anti-glare anti-fingerprint hardness-increasing coating liquid composition, coating and preparation method of coating |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI869660B (en) * | 2021-06-18 | 2025-01-11 | 日商拓自達電線股份有限公司 | Electromagnetic wave shielding film |
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