CN111800023A - High-frequency boosting transformer rectifying device - Google Patents
High-frequency boosting transformer rectifying device Download PDFInfo
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- CN111800023A CN111800023A CN202010666354.5A CN202010666354A CN111800023A CN 111800023 A CN111800023 A CN 111800023A CN 202010666354 A CN202010666354 A CN 202010666354A CN 111800023 A CN111800023 A CN 111800023A
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- 238000000429 assembly Methods 0.000 claims abstract description 4
- 238000002955 isolation Methods 0.000 claims description 12
- 239000003990 capacitor Substances 0.000 claims description 9
- 238000009499 grossing Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 238000011084 recovery Methods 0.000 description 6
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- 230000000694 effects Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/24—Magnetic cores
- H01F27/26—Fastening parts of the core together; Fastening or mounting the core on casing or support
- H01F27/266—Fastening or mounting the core on casing or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/32—Insulating of coils, windings, or parts thereof
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Abstract
The invention discloses a high-frequency boosting transformer rectifying device, which comprises: the supporting plate assemblies are positioned at two ends of the magnetic core of the high-frequency boosting transformer in the length direction; the annular insulating column assembly comprises a first annular insulating column and a second annular insulating column which are respectively sleeved on the magnetic core arm in the length direction of the magnetic core, and a plurality of isolating rings are arranged on the first annular insulating column and the second annular insulating column; the high-voltage wire package in the high-voltage wire package assembly is positioned between two adjacent isolating rings and is also positioned between the isolating rings and the supporting plate assembly; the high-frequency rectifying plate of the high-frequency rectifying plate assembly is arranged between two adjacent high-voltage wire packages on the annular insulating column and electrically connected with each other, and the high-frequency rectifying plates corresponding to the first annular insulating column and the second annular insulating column are electrically connected with each other. By adopting the high-frequency rectifying circuit with compact structure, the sizes of the high-frequency high-voltage rectifying silicon stack and the rectifying circuit are reduced, the structures of the high-frequency rectifying board card and the high-frequency boosting transformer are further optimized according to specific application environments, and the space utilization rate of the high-frequency boosting transformer and the rectifying circuit thereof is improved.
Description
Technical Field
The invention relates to the technical field of transformer equipment, in particular to a rectifying device of a high-frequency boosting transformer.
Background
At present, a high-power high-voltage step-up transformer and a high-frequency rectifying circuit are mostly wound by sections of secondary sides of the transformer, then the sections are cascaded, and the high-frequency rectifying circuit adopts a high-voltage silicon stack for rectifying output. Although the mode can reduce the influence of turn-to-turn distributed capacitance of the secondary winding on the high-frequency rectification loop, the high-voltage high-frequency rectification silicon stack has larger volume, so that the space utilization rate is poorer in the structural design process of the high-power high-voltage step-up transformer and the high-frequency rectification circuit.
Disclosure of Invention
The embodiment of the invention aims to provide a high-frequency boosting transformer rectifying device, which adopts a high-frequency rectifying circuit with a compact structure to divide a large-volume high-frequency high-voltage rectifying silicon stack into parts, further optimizes the structures of a high-frequency rectifying board card and a high-frequency boosting transformer according to a specific application environment and improves the space utilization rate.
In order to solve the above technical problem, an embodiment of the present invention provides a high-frequency step-up transformer rectifying device, including: the high-voltage cable comprises a supporting plate assembly, an annular insulating column assembly, a high-voltage wire package assembly and a high-frequency rectifying plate assembly;
the supporting plate assemblies are positioned at two ends of the high-frequency boosting transformer magnetic core in the length direction;
the annular insulating column assembly comprises a first annular insulating column and a second annular insulating column which are respectively sleeved on the magnetic core arm in the length direction of the magnetic core, and a plurality of isolation rings are respectively arranged on the first annular insulating column and the second annular insulating column;
the high-voltage coil assembly comprises a plurality of high-voltage coils, and the high-voltage coils are positioned between the two adjacent isolating rings and between the isolating rings and the supporting plate assembly;
the high-frequency rectifying plate assembly comprises a plurality of high-frequency rectifying plates, the high-frequency rectifying plates are arranged between two adjacent high-voltage wire packages on the annular insulating column and electrically connected with the two adjacent high-voltage wire packages, and the high-frequency rectifying plates on the first annular insulating column correspond to the high-frequency rectifying plates electrically connected with the second annular insulating column.
Further, the support plate assembly comprises a support bottom plate and a support top plate;
the supporting bottom plate is connected with one magnetic core arm in the width direction of the magnetic core;
the supporting top plate is connected to the other core arm in the core width direction.
Further, the position of the isolation ring on the first annular insulating column corresponds to that of the isolation ring on the first annular insulating column.
Further, the high-frequency rectifying plate is C-shaped or U-shaped;
the high-frequency rectifying plate on the first annular insulating column is opposite to the opening direction of the high-frequency rectifying plate corresponding to the second annular insulating column.
Furthermore, two adjacent high-frequency rectification plates on the first annular insulating column or the second annular insulating column are detachably linked through a plurality of insulating support columns;
the supporting bottom plate and/or the supporting top plate and the adjacent high-frequency rectifying plate are detachably connected through a plurality of insulating supporting columns.
Furthermore, threads are arranged at two ends of the insulating support column;
the high-frequency rectifying plate and the supporting plate component are detachably connected with the insulating supporting column through an insulating nut.
Further, the high-frequency rectifying plate comprises a first high-frequency rectifying full bridge and a second high-frequency rectifying full bridge;
the input end of the first high-frequency rectifying full bridge is connected with the high-voltage coil on one side of the high-frequency rectifying plate, and the input end of the second high-frequency rectifying full bridge is connected with the high-voltage coil on the other side of the high-frequency rectifying plate;
one output end of the first high-frequency rectifying full bridge is connected with one output end of the second high-frequency rectifying full bridge;
the other output end of the first high-frequency rectifying full bridge is connected with the corresponding high-frequency rectifying plate;
and the other output end of the second high-frequency rectifying full bridge is connected with the output end of the high-frequency rectifying plate.
Further, a high-frequency rectifying full bridge of the first high-frequency rectifying full bridge and/or the second high-frequency rectifying full bridge comprises a series-parallel circuit of a plurality of diodes;
the number of the diode series connection is related to the high-frequency rectification voltage level and the diode voltage level;
the number of parallel diodes is related to the high frequency rectified current level and the diode current level.
Further, the high-frequency rectification full bridge also comprises a smoothing capacitor;
and two ends of the flat wave capacitor are respectively connected with two output ends of the high-frequency rectification full bridge.
Further, on the first annular insulating column the high frequency rectifying plate with the second annular insulating column corresponds the high frequency rectifying plate is connected through the high voltage jumper wire electricity.
The technical scheme of the embodiment of the invention has the following beneficial technical effects:
by adopting the high-frequency rectifying circuit with compact structure, the whole high-frequency high-voltage rectifying silicon with large volume is broken into parts, the volume of the rectifying circuit is reduced, the structures of the high-frequency rectifying board card and the high-frequency boosting transformer are further optimized according to the specific application environment, and the space utilization rate of the high-frequency boosting transformer and the rectifying circuit thereof is improved; the high-frequency rectifying circuit is formed by the discrete fast recovery diodes in a segmented mode, and the high-frequency rectifying circuit card is combined with the structural design of the high-frequency boosting transformer, so that a high-frequency rectifying silicon stack with a large size is replaced, and the influence of the secondary side turn-to-turn distributed capacitance of the transformer on the high-frequency boosting circuit is effectively reduced.
Drawings
FIG. 1 is a schematic diagram of a rectification apparatus of a high-frequency step-up transformer according to an embodiment of the invention;
fig. 2 is a schematic diagram of a high-frequency rectifying full bridge circuit of a high-frequency rectifying plate according to an embodiment of the present invention.
Reference numerals:
11. supporting baseplate, 12, supporting top plate, 2, isolating ring, 3, high-voltage coil, 4, high-frequency rectifying plate, 41, first high-frequency rectifying full bridge, 42, second high-frequency rectifying full bridge, 43, flat wave capacitor, 5, magnetic core, 6 and insulating support column.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings in conjunction with the following detailed description. It should be understood that the description is intended to be exemplary only, and is not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
Fig. 1 is a schematic diagram of a rectifying device of a high-frequency step-up transformer according to an embodiment of the present invention.
Referring to fig. 1, an embodiment of the present invention provides a high-frequency boost transformer rectifying device, which is connected to a secondary side of a high-frequency boost transformer, a primary side of the transformer is wound on a magnetic core 5, and the high-frequency boost transformer rectifying device includes: the high-frequency rectification device comprises a supporting plate assembly 1, an annular insulating column assembly, a high-voltage coil 3 assembly and a high-frequency rectification plate 4 assembly. The supporting plate assemblies 1 are located at both ends of the high-frequency step-up transformer core 5 in the length direction. Annular insulating column subassembly is including overlapping first annular insulating column and the second annular insulating column of locating 5 arms of magnetic core of 5 length direction of magnetic core respectively, all is equipped with a plurality of spacer ring 2 on first annular insulating column and the second annular insulating column. The high-voltage coil 3 assembly comprises a plurality of high-voltage coils 3, and the high-voltage coils 3 are positioned between two adjacent isolation rings 2 and also positioned between the isolation rings 2 and the support plate assembly 1. The high-frequency rectifying plate 4 assembly comprises a plurality of high-frequency rectifying plates 4, the high-frequency rectifying plates 4 are arranged between two adjacent high-voltage wire packages 3 on the annular insulating column and are electrically connected with the two adjacent high-voltage wire packages 3, and the high-frequency rectifying plates 4 on the first annular insulating column are electrically connected with the high-frequency rectifying plates 4 corresponding to the second annular insulating column.
According to the technical scheme, the high-frequency rectifying circuit with the compact structure is adopted, the whole high-frequency high-voltage rectifying silicon stack with the large volume is divided into parts, the structures of the high-frequency rectifying plate 4 and the high-frequency boosting transformer are further optimized according to the specific application environment, and the space utilization rate is improved.
Specifically, high frequency step-up transformer magnetic core 5 can adopt the rectangle magnetic core 5 that I shape magnetic core 5 and U-shaped magnetic core 5 are constituteed, is convenient for set up annular insulating column and high voltage package 3 on 5 arms of magnetic core on the 5 length direction of magnetic core, has increased the quantity of high voltage package 3 on 5 arms of single magnetic core, is convenient for set up more high frequency rectifying plate 4 and has carried out high frequency rectification and voltage cascade.
By arranging the isolation rings 2 on the first annular insulating column and the second annular insulating column and arranging the high-voltage wire packages 3 between two adjacent isolation rings 2, the insulation and voltage resistance between the adjacent high-voltage wire packages 3 is improved.
In addition, the high-frequency rectifying plate 4 on the first annular insulating column and the high-frequency rectifying plate 4 corresponding to the second annular insulating column are electrically connected through a high-voltage jumper.
Specifically, the support plate assembly 1 comprises a support bottom plate 11 and a support top plate 12; the supporting bottom plate 11 is connected with one magnetic core 5 arm in the width direction of the magnetic core 5; the top support plate 12 is connected to the other core 5 arm in the width direction of the core 5.
The position of the isolation ring 2 on the first annular insulating column corresponds to that of the isolation ring 2 on the first annular insulating column. The plurality of high voltage wire packages 3 on the first annular insulating column correspond to the plurality of high voltage wire packages 3 on the second annular insulating column one to one. A plurality of high-frequency rectifying plates 4 on the first annular insulating column correspond to a plurality of high-frequency rectifying plates 4 on the second annular insulating column one by one.
Optionally, the high-frequency rectifying plate 4 is C-shaped or U-shaped. The high-frequency rectifying plate 4 on the first annular insulating column is opposite to the opening direction of the high-frequency rectifying plate 4 corresponding to the second annular insulating column. The high-frequency rectifying plate 4 on the first annular insulating column and the high-frequency rectifying plate 4 corresponding to the second annular insulating column are assembled to form a hollow elliptical disk, are assembled between the two high-voltage wire packages 3 on one side and the two high-voltage wire packages 3 on the other side and are fixed through the insulating support columns. Above-mentioned connected mode can effectively utilize the space, accomplishes the biggest optimization in the aspect of structural design, and the voltage level is upwards increased step by two high frequency cowling panels 4 adjacent with supporting baseplate 11, does benefit to high-voltage insulation design.
Similarly, the opening direction of the high-frequency rectification plate 4 on the first annular insulating column faces the second annular insulating column, and similarly, the opening direction of the high-frequency rectification plate 4 on the second annular insulating column faces the first annular insulating column.
In one implementation manner of the embodiment of the present invention, two adjacent high-frequency rectification plates 4 on the first annular insulating column and/or the second annular insulating column along the length direction of the magnetic core 5 are detachably linked by a plurality of insulating support columns. The supporting bottom plate 11 and/or the supporting top plate 12 are detachably connected to the adjacent high-frequency rectification plate 4 through a plurality of insulating support columns. Through the insulating support columns, the independent disassembly and assembly of the high-frequency rectifying plate 4 can be realized, so that when a single high-frequency rectifying plate 4 breaks down, operation and maintenance personnel can rapidly replace a fault device, the maintenance of the whole high-frequency boosting transformer is not required to be disassembled, the fault repairing speed is greatly improved, and the repairing time is saved.
Specifically, a plurality of insulating support columns connected to one side of the high-frequency rectifying plate 4 and a plurality of insulating support columns connected to the other side of the high-frequency rectifying plate are arranged in a staggered manner.
Furthermore, threads are arranged at two ends of the insulating support column. The high-frequency rectifying plate 4 and the supporting plate component 1 are detachably connected with the insulating supporting column through an insulating nut.
Fig. 2 is a schematic diagram of a high-frequency rectifying full bridge circuit of a high-frequency rectifying plate according to an embodiment of the present invention.
Referring to fig. 2, in one embodiment of the present invention, the high-frequency rectifying plate 4 includes a first high-frequency rectifying full bridge 41 and a second high-frequency rectifying full bridge 42. The input end of the first high-frequency rectifying full bridge 41 is connected to the high-voltage coil 3 on one side of the high-frequency rectifying plate 4, and the input end of the second high-frequency rectifying full bridge 42 is connected to the high-voltage coil 3 on the other side of the high-frequency rectifying plate 4. One output of the first high frequency rectified full bridge 41 is connected to one output of the second high frequency rectified full bridge 42. And the other output end of the first high-frequency rectifying full bridge 41 is connected with the corresponding high-frequency rectifying plate 4. The other output of the second high frequency rectifying full bridge 42 is connected to the output of the high frequency rectifying plate 4.
The high-frequency rectifying plate 4 is respectively connected with the high-voltage wire package 3 which is connected with the secondary side of the high-frequency boosting transformer and is wound in sections, each section utilizes the fast recovery diode to carry out high-frequency rectification in a series-parallel mode according to the voltage grade and the current grade, and after the high-frequency rectification is carried out, the voltage is cascaded to complete high-voltage output.
In particular, the high-frequency rectifying full bridge of the first high-frequency rectifying full bridge 41 and/or the second high-frequency rectifying full bridge 42 comprises a series-parallel circuit of several diodes. The number of the diode series connection is related to the high-frequency rectification voltage level and the diode voltage level; the number of diodes connected in parallel is related to the high frequency rectified current level and the diode current level.
Further, the high frequency rectifying full bridge further comprises a smoothing capacitor 43. Two ends of the smoothing capacitor 43 are respectively connected with two output ends of the high-frequency rectifying full bridge.
A plurality of fast recovery diodes are connected in series and parallel according to voltage and current levels to form a high-frequency rectifying bridge circuit, high-frequency alternating current electric energy output by a high-voltage coil 3 is rectified into direct current electric energy, and a small-capacitance flat wave capacitor 43 is connected in parallel at the output side of the high-frequency rectifying bridge circuit and used for carrying out flat wave and series voltage sharing of the direct current electric energy.
As shown in fig. 2, each bridge arm of the first high-frequency rectification full bridge 41 and/or the second high-frequency rectification full bridge 42 is connected in series from D11 to D1n according to the high-frequency rectification voltage level and the voltage level of the selected fast recovery diode, so as to meet the requirement of the high-frequency rectification voltage on the voltage level of the bridge arm; each bridge arm is connected with D11-Dn 1 in parallel according to the high-frequency rectification current grade and the selected fast recovery diode current grade, the requirement of high-frequency rectification voltage on the bridge arm current grade is met, each bridge rectification output is connected with a smoothing capacitor 43 in parallel, and the high-frequency rectification smoothing and cascade voltage-sharing effects are achieved; each section of high-frequency bridge rectifier circuit corresponds to one high-voltage coil 3, two bridge rectifier circuits on the high-frequency rectifier plates 4 are cascaded on the board card through PCB wiring, the two high-frequency rectifier plates 4 are cascaded, the cascade connection is completed through a section of high-voltage jumper, and the cascade connection and the high-voltage output between the upper board card and the lower board card are completed through the high-voltage output A and the high-voltage output B in the cascade connection between the upper high-voltage rectifier plate and the lower high.
The embodiment of the invention aims to protect a rectifying device of a high-frequency boosting transformer, which is connected with a secondary side of the high-frequency boosting transformer and comprises the following components: the high-voltage cable comprises a supporting plate assembly, an annular insulating column assembly, a high-voltage wire package assembly and a high-frequency rectifying plate assembly; the supporting plate assembly comprises two ends positioned in the length direction of the high-frequency boosting transformer magnetic core; the annular insulating column assembly comprises a first annular insulating column and a second annular insulating column which are respectively sleeved on the magnetic core arm in the length direction of the magnetic core, and a plurality of isolating rings are respectively arranged on the first annular insulating column and the second annular insulating column; the high-voltage coil assembly comprises a plurality of high-voltage coils, and the high-voltage coils are positioned between two adjacent isolating rings and also positioned between the isolating rings and the supporting plate assembly; the high-frequency rectifying plate assembly comprises a plurality of high-frequency rectifying plates, the high-frequency rectifying plates are arranged between two adjacent high-voltage coils on the annular insulating column and are electrically connected with the two adjacent high-voltage coils, and the high-frequency rectifying plates on the first annular insulating column are electrically connected with the high-frequency rectifying plates corresponding to the second annular insulating column. The technical scheme has the following effects:
by adopting the high-frequency rectifying circuit with compact structure, the whole high-frequency high-voltage rectifying silicon with large volume is broken into parts, the volume of the rectifying circuit is reduced, the structures of the high-frequency rectifying board card and the high-frequency boosting transformer are further optimized according to the specific application environment, and the space utilization rate of the high-frequency boosting transformer and the rectifying circuit thereof is improved; the high-frequency rectifying circuit is formed by the discrete fast recovery diodes in a segmented mode, and the high-frequency rectifying circuit card is combined with the structural design of the high-frequency boosting transformer, so that a high-frequency rectifying silicon stack with a large size is replaced, and the influence of the secondary side turn-to-turn distributed capacitance of the transformer on the high-frequency boosting circuit is effectively reduced.
It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explaining the principles of the invention and are not to be construed as limiting the invention. Therefore, any modification, equivalent replacement, improvement and the like made without departing from the spirit and scope of the present invention should be included in the protection scope of the present invention. Further, it is intended that the appended claims cover all such variations and modifications as fall within the scope and boundaries of the appended claims or the equivalents of such scope and boundaries.
Claims (10)
1. A high frequency step-up transformer rectifying device, comprising: the high-voltage cable comprises a supporting plate assembly, an annular insulating column assembly, a high-voltage wire package assembly and a high-frequency rectifying plate assembly;
the supporting plate assemblies are positioned at two ends of the high-frequency boosting transformer magnetic core in the length direction;
the annular insulating column assembly comprises a first annular insulating column and a second annular insulating column which are respectively sleeved on the magnetic core arm in the length direction of the magnetic core, and a plurality of isolation rings are respectively arranged on the first annular insulating column and the second annular insulating column;
the high-voltage coil assembly comprises a plurality of high-voltage coils, and the high-voltage coils are positioned between two adjacent isolating rings and between the isolating rings and the supporting plate assembly;
the high-frequency rectifying plate assembly comprises a plurality of high-frequency rectifying plates, the high-frequency rectifying plates are arranged between two adjacent high-voltage wire packages on the annular insulating column and electrically connected with the two adjacent high-voltage wire packages, and the high-frequency rectifying plates on the first annular insulating column correspond to the high-frequency rectifying plates electrically connected with the second annular insulating column.
2. A high frequency step-up transformer rectification device as claimed in claim 1,
the supporting plate assembly comprises a supporting bottom plate and a supporting top plate;
the supporting bottom plate is connected with one magnetic core arm in the width direction of the magnetic core;
the supporting top plate is connected to the other core arm in the core width direction.
3. A high frequency step-up transformer rectification device as claimed in claim 1,
the isolation ring on the first annular insulating column corresponds to the isolation ring on the first annular insulating column in position.
4. A high frequency step-up transformer rectification device as claimed in claim 1,
the high-frequency rectifying plate is C-shaped or U-shaped;
the high-frequency rectifying plate on the first annular insulating column is opposite to the opening direction of the high-frequency rectifying plate corresponding to the second annular insulating column.
5. A high frequency step-up transformer rectification device as claimed in claim 1,
two adjacent high-frequency rectifying plates on the first annular insulating column or the second annular insulating column are detachably connected through a plurality of insulating supporting columns;
the supporting bottom plate and/or the supporting top plate and the adjacent high-frequency rectifying plate are detachably connected through a plurality of insulating supporting columns.
6. The high frequency boost transformer rectification device according to claim 5,
threads are arranged at two ends of the insulating support column;
the high-frequency rectifying plate and the supporting plate component are detachably connected with the insulating supporting column through an insulating nut.
7. A high frequency step-up transformer rectification device as claimed in claim 1,
the high-frequency rectifying plate comprises a first high-frequency rectifying full bridge and a second high-frequency rectifying full bridge;
the input end of the first high-frequency rectifying full bridge is connected with the high-voltage coil on one side of the high-frequency rectifying plate, and the input end of the second high-frequency rectifying full bridge is connected with the high-voltage coil on the other side of the high-frequency rectifying plate;
one output end of the first high-frequency rectifying full bridge is connected with one output end of the second high-frequency rectifying full bridge;
the other output end of the first high-frequency rectifying full bridge is connected with the corresponding high-frequency rectifying plate;
and the other output end of the second high-frequency rectifying full bridge is connected with the output end of the high-frequency rectifying plate.
8. The high frequency boost transformer rectification device according to claim 7,
the high-frequency rectification full bridge of the first high-frequency rectification full bridge and/or the second high-frequency rectification full bridge comprises a series-parallel circuit of a plurality of diodes;
the number of the diode series connection is related to the high-frequency rectification voltage level and the diode voltage level;
the number of parallel diodes is related to the high frequency rectified current level and the diode current level.
9. The high frequency boost transformer rectification device according to claim 7,
the first high-frequency rectification full bridge and/or the second high-frequency rectification full bridge also comprise smoothing capacitors;
and two ends of the flat wave capacitor are respectively connected with two output ends of the high-frequency rectification full bridge.
10. A high frequency step-up transformer rectification device as claimed in any one of claims 1 to 9,
the high-frequency rectifying plate is electrically connected with the high-frequency rectifying plate corresponding to the second annular insulating column through a high-voltage jumper wire.
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| CN202010666354.5A CN111800023B (en) | 2020-07-10 | 2020-07-10 | High-frequency boosting transformer rectifying device |
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| CN202010666354.5A CN111800023B (en) | 2020-07-10 | 2020-07-10 | High-frequency boosting transformer rectifying device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112821786A (en) * | 2021-02-04 | 2021-05-18 | 兰州大学 | Compact negative high-voltage direct-current power supply |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201178022Y (en) * | 2008-04-17 | 2009-01-07 | 中国电子科技集团公司第十四研究所 | A high voltage transformer rectifier |
| CN202931207U (en) * | 2011-12-27 | 2013-05-08 | 中国电子科技集团公司第十四研究所 | Combinable Low Distributed Capacitance High Voltage High Power Rectifier |
| CN103259425A (en) * | 2013-05-18 | 2013-08-21 | 大连碧海电子设备有限公司 | High-power high-frequency high-voltage rectifier transformer |
| CN104021916A (en) * | 2014-06-06 | 2014-09-03 | 合肥雷科电子科技有限公司 | High-power floating high-voltage reconstructive combined type high-frequency and high-voltage rectifier transformer |
| CN105632712A (en) * | 2015-12-31 | 2016-06-01 | 合肥雷科电子科技有限公司 | High-frequency, high-voltage and high-power rectification transformer |
| US20180069485A1 (en) * | 2015-04-23 | 2018-03-08 | Chicony Power Technology Co., Ltd. | Power conversion system |
-
2020
- 2020-07-10 CN CN202010666354.5A patent/CN111800023B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201178022Y (en) * | 2008-04-17 | 2009-01-07 | 中国电子科技集团公司第十四研究所 | A high voltage transformer rectifier |
| CN202931207U (en) * | 2011-12-27 | 2013-05-08 | 中国电子科技集团公司第十四研究所 | Combinable Low Distributed Capacitance High Voltage High Power Rectifier |
| CN103259425A (en) * | 2013-05-18 | 2013-08-21 | 大连碧海电子设备有限公司 | High-power high-frequency high-voltage rectifier transformer |
| CN104021916A (en) * | 2014-06-06 | 2014-09-03 | 合肥雷科电子科技有限公司 | High-power floating high-voltage reconstructive combined type high-frequency and high-voltage rectifier transformer |
| US20180069485A1 (en) * | 2015-04-23 | 2018-03-08 | Chicony Power Technology Co., Ltd. | Power conversion system |
| CN105632712A (en) * | 2015-12-31 | 2016-06-01 | 合肥雷科电子科技有限公司 | High-frequency, high-voltage and high-power rectification transformer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112821786A (en) * | 2021-02-04 | 2021-05-18 | 兰州大学 | Compact negative high-voltage direct-current power supply |
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| CN111800023B (en) | 2022-05-06 |
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