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CN111769090A - Plastic packaging power module, plastic packaging mold and plastic packaging method - Google Patents

Plastic packaging power module, plastic packaging mold and plastic packaging method Download PDF

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Publication number
CN111769090A
CN111769090A CN202010705491.5A CN202010705491A CN111769090A CN 111769090 A CN111769090 A CN 111769090A CN 202010705491 A CN202010705491 A CN 202010705491A CN 111769090 A CN111769090 A CN 111769090A
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metal tube
power module
epoxy resin
metal
plastic
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梁小广
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Wuxi Lipus Semiconductor Co ltd
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Wuxi Lipus Semiconductor Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

本发明提供了一种塑封功率模块、塑封模具及塑封方法，包括：基板、电子元器件、金属管、环氧树脂层和金属端子；所述电子元器件和所述金属管连接在所述基板上；所述基板、电子元器件和金属管塑封通过所述环氧树脂层塑封；所述金属管，一端连接在所述基板上，另一端与所述环氧树脂层的外部空间连通；所述金属端子的一端穿过所述金属管连接在所述基板上。通过本发明的结构、制造工艺可以增大端子之间的绝缘距离，和端子到外部散热片之间的绝缘距离，同时减小功率模块的体积。

Figure 202010705491

The invention provides a plastic encapsulation power module, a plastic encapsulation mold and a plastic encapsulation method, comprising: a substrate, an electronic component, a metal tube, an epoxy resin layer and a metal terminal; the electronic component and the metal tube are connected on the substrate The substrate, electronic components and metal tubes are plastic-sealed through the epoxy resin layer; one end of the metal tube is connected to the substrate, and the other end is communicated with the external space of the epoxy resin layer; One end of the metal terminal is connected to the base plate through the metal tube. Through the structure and manufacturing process of the present invention, the insulation distance between the terminals and the insulation distance between the terminals and the external heat sink can be increased, and the volume of the power module can be reduced at the same time.

Figure 202010705491

Description

塑封功率模块、塑封模具及塑封方法Plastic packaging power module, plastic packaging mold and plastic packaging method

技术领域technical field

本发明涉及半导体技术领域，具体地，涉及一种塑封功率模块、塑封模具及塑封方法。The present invention relates to the technical field of semiconductors, and in particular, to a plastic encapsulation power module, a plastic encapsulation mold and a plastic encapsulation method.

背景技术Background technique

在电源，电力电子变换器应用中，功率半导体(IGBT，MOSFET，SiC,GaN等)器件因为被广泛采用，在功率较大的场合下一般使用模块的封装形式。现在被广泛使用的封装形式如图1所示，功率模块主要由金属底板，焊接层，DBC(双面覆铜陶瓷基板)，AMB(箔钎焊的覆铜陶瓷基板)，绝缘散热树脂薄膜或者其他绝缘散热材料，邦定线，电气连接用端子，环氧树脂等组成。功率半导体晶片通过焊接固定到绝缘散热材料上后，通过铝邦定线进行电气连接。再通过回流焊或者烧结等工艺将DBC者其他绝缘散热材料焊接到金属底板上，功率半导体晶片的发出的热通过DBC或者其他绝缘散热材料，焊接层传导到金属底板上，金属底板再通过风冷或者水冷散热出去，端子用于连接外部的电气电路。In the application of power supply and power electronic converter, power semiconductor (IGBT, MOSFET, SiC, GaN, etc.) devices are widely used, and the package form of module is generally used in the case of high power. The widely used packaging forms are shown in Figure 1. The power module is mainly composed of a metal base plate, a solder layer, DBC (double-sided copper-clad ceramic substrate), AMB (foil brazed copper-clad ceramic substrate), insulating and heat-dissipating resin film or Other insulation and heat dissipation materials, bonding wires, electrical connection terminals, epoxy resin, etc. After the power semiconductor chip is fixed to the insulating and heat-dissipating material by welding, it is electrically connected by aluminum bonding wires. Then, through reflow soldering or sintering, other insulating and heat-dissipating materials of DBC are welded to the metal base plate. The heat emitted by the power semiconductor chip passes through DBC or other insulating and heat-dissipating materials, and the welding layer is conducted to the metal base plate, and the metal base plate is then cooled by air. Or water-cooled and dissipated, and the terminals are used to connect external electrical circuits.

图2为压注模塑封封装工艺的例子，被加热成液体状的环氧树脂通过高压灌入压注模具中，铜框架与其他器件一起成型为压注模塑封功率模块。环氧树脂固化后，对铜框架进行切切筋以及管脚成形变成电气连接用的端子。Figure 2 shows an example of the injection molding encapsulation process. The epoxy resin heated to a liquid state is poured into the injection mold through high pressure, and the copper frame is formed together with other components to form an injection molding power module. After the epoxy resin is cured, the copper frame is cut and the pins are formed into terminals for electrical connection.

使用铜框架来形成电气连接用端子的方法，端子只能分布于功率模块的两侧(或者四周)，由于塑封模块的成型厚度有限制(一般小于10mm)，在功率模块安装到散热片后，端子在模块两侧时造成其和外部散热片(铜或者铝)之间的绝缘距离难以扩大。In the method of using a copper frame to form terminals for electrical connection, the terminals can only be distributed on both sides (or around) of the power module. Due to the limited molding thickness of the plastic-encapsulated module (generally less than 10mm), after the power module is installed on the heat sink, The insulation distance between the terminals and the external heat sink (copper or aluminum) is difficult to expand when the terminals are on both sides of the module.

另外因为端子在模块的两侧(或者四周)，增大了模块的体积，不利于应用系统的小型化。In addition, because the terminals are on both sides (or around) of the module, the volume of the module is increased, which is not conducive to the miniaturization of the application system.

发明内容SUMMARY OF THE INVENTION

针对现有技术中的缺陷，本发明的目的是提供一种塑封功率模块、塑封模具及塑封方法。In view of the defects in the prior art, the purpose of the present invention is to provide a plastic encapsulation power module, a plastic encapsulation mold and a plastic encapsulation method.

根据本发明提供的一种塑封功率模块，包括：基板、电子元器件、金属管、环氧树脂层和金属端子；A plastic encapsulated power module provided according to the present invention includes: a substrate, an electronic component, a metal tube, an epoxy resin layer and a metal terminal;

所述电子元器件和所述金属管连接在所述基板上；the electronic component and the metal tube are connected on the substrate;

所述基板、电子元器件和金属管塑封通过所述环氧树脂层塑封；The substrate, electronic components and metal tubes are plastic-sealed through the epoxy resin layer;

所述金属管，一端连接在所述基板上，另一端与所述环氧树脂层的外部空间连通；One end of the metal tube is connected to the substrate, and the other end is communicated with the outer space of the epoxy resin layer;

所述金属端子的一端穿过所述金属管连接在所述基板上。One end of the metal terminal is connected to the substrate through the metal tube.

优选地，所述金属管的所述另一端与所述环氧树脂层的外壁齐平。Preferably, the other end of the metal tube is flush with the outer wall of the epoxy resin layer.

优选地，所述金属管焊接或烧结在所述基板上。Preferably, the metal tube is welded or sintered on the base plate.

优选地，所述金属端子包括带有压接端的金属端子。Preferably, the metal terminals include metal terminals with crimped ends.

优选地，所述金属管的原始状态为一端开口一端密封的结构，开口端连接在所述基板上，密封端位于所述环氧树脂层内部；Preferably, the original state of the metal tube is a structure in which one end is open and one end is sealed, the open end is connected to the substrate, and the sealed end is located inside the epoxy resin layer;

在所述环氧树脂层固化后通过切割、研磨的方式去除所述金属管的密封端及相应的环氧树脂。After the epoxy resin layer is cured, the sealed end of the metal tube and the corresponding epoxy resin are removed by cutting and grinding.

优选地，所述密封端包括：一体式密封结构、盖板密封结构、盖帽密封结构或填充密封结构；Preferably, the sealing end comprises: an integral sealing structure, a cover plate sealing structure, a cap sealing structure or a filling sealing structure;

所述盖板密封结构包括盖板，所述盖板通过粘接剂粘接在所述金属管的端部，从而构成所述密封端；The cover plate sealing structure includes a cover plate, and the cover plate is adhered to the end of the metal tube by an adhesive, thereby forming the sealing end;

所述盖帽密封结构包括盖帽，所述盖帽与所述金属管的端部外壁过盈配合，从而构成所述密封端；The cap sealing structure includes a cap, and the cap is in interference fit with the outer wall of the end portion of the metal tube, thereby forming the sealing end;

所述填充密封结构包括填充物，所述填充物与所述金属管的端部内壁过盈配合，从而构成所述密封端。The filling and sealing structure includes a filler, and the filler is in interference fit with the inner wall of the end portion of the metal tube, thereby forming the sealing end.

优选地，所述盖板、所述粘接剂、所述盖帽和所述填充物的耐温温度高于环氧树脂的塑封工艺温度。Preferably, the temperature resistance temperature of the cover plate, the adhesive, the cap and the filler is higher than the plastic sealing temperature of the epoxy resin.

根据本发明提供的一种塑封模具，用于制造所述的塑封功率模块，所述塑封模具包括上模和下模；According to a plastic sealing mold provided by the present invention, used for manufacturing the plastic sealing power module, the plastic sealing mold includes an upper mold and a lower mold;

所述上模或所述下模上设置有功率模块固定部；The upper die or the lower die is provided with a power module fixing part;

所述下模或所述上模上滑动连接有可动柱，所述可动柱的位置与所述金属管的位置相对应，在合模状态下，所述可动柱能够封闭所述金属管的所述另一端。A movable column is slidably connected to the lower die or the upper die, and the position of the movable column corresponds to the position of the metal tube. In the clamping state, the movable column can seal the metal the other end of the tube.

根据本发明提供的一种塑封功率模块的塑封方法，采用所述的塑封模具，执行步骤包括：According to a plastic encapsulation method for plastic encapsulation of a power module provided by the present invention, the plastic encapsulation mold is adopted, and the execution steps include:

S1、将待塑封功率模块固定在所述上模或所述下模，所述金属管两端开口，所述金属管的所述另一端对应朝向所述下模或所述上模；S1. Fix the power module to be molded on the upper mold or the lower mold, the two ends of the metal pipe are open, and the other end of the metal pipe faces the lower mold or the upper mold correspondingly;

S2、合模，使所述可动柱封闭所述金属管的所述另一端；S2. Clamp the mold, so that the movable column closes the other end of the metal tube;

S3、向塑封模具内注入液态环氧树脂；S3, inject liquid epoxy resin into the plastic sealing mold;

S4、在液态环氧树脂完全固化前抽出所述可动柱；S4, pulling out the movable column before the liquid epoxy resin is completely cured;

S5、将金属端子插入所述金属管，与所述基板形成电气连接。S5, inserting a metal terminal into the metal tube to form an electrical connection with the substrate.

根据本发明提供的一种所述的塑封功率模块的塑封方法，包括步骤：According to a plastic encapsulation method for a plastic encapsulated power module provided by the present invention, the method comprises the steps of:

S1、将待塑封功率模块固定在塑封模具的上模或下模，所述金属管的密封端对应朝向下模或上模；S1. Fix the power module to be molded on the upper mold or the lower mold of the plastic molding mold, and the sealing end of the metal tube corresponds to the lower mold or the upper mold;

S2、合模后向塑封模具内注入液态环氧树脂；S2. After the mold is closed, inject liquid epoxy resin into the plastic sealing mold;

S3、在液态环氧树脂固化后，通过切割或研磨去除所述密封端；S3. After the liquid epoxy resin is cured, the sealing end is removed by cutting or grinding;

S4、将金属端子插入所述金属管，与所述基板形成电气连接。S4, inserting a metal terminal into the metal tube to form an electrical connection with the substrate.

与现有技术相比，本发明具有如下的有益效果：Compared with the prior art, the present invention has the following beneficial effects:

通过本发明的结构、制造工艺可以增大端子之间的绝缘距离，和端子到外部散热片之间的绝缘距离，同时减小功率模块的体积。Through the structure and manufacturing process of the present invention, the insulation distance between the terminals and the insulation distance between the terminals and the external heat sink can be increased, and the volume of the power module can be reduced at the same time.

附图说明Description of drawings

通过阅读参照以下附图对非限制性实施例所作的详细描述，本发明的其它特征、目的和优点将会变得更明显：Other features, objects and advantages of the present invention will become more apparent by reading the detailed description of non-limiting embodiments with reference to the following drawings:

图1为传统塑封功率模块的结构示意图；FIG. 1 is a schematic structural diagram of a traditional plastic-encapsulated power module;

图2为传统塑封功率模块的制造工艺图；FIG. 2 is a manufacturing process diagram of a traditional plastic encapsulated power module;

图3为本发明塑封功率模块的结构示意图；3 is a schematic structural diagram of a plastic-encapsulated power module of the present invention;

图4为本发明塑封模具的结构示意图；4 is a schematic structural diagram of a plastic sealing mold of the present invention;

图5为本发明金属管实施例1的结构示意图；5 is a schematic structural diagram of Embodiment 1 of the metal pipe of the present invention;

图6为本发明金属管实施例2的结构示意图；6 is a schematic structural diagram of Embodiment 2 of the metal pipe of the present invention;

图7为本发明金属管实施例3的结构示意图；7 is a schematic structural diagram of Embodiment 3 of the metal pipe of the present invention;

图8为本发明金属管实施例4的结构示意图；8 is a schematic structural diagram of Embodiment 4 of the metal pipe of the present invention;

图9为本发明金属管实施例4的一种连接金属端子的结构示意图。FIG. 9 is a schematic structural diagram of connecting metal terminals according to Embodiment 4 of the metal tube of the present invention.

具体实施方式Detailed ways

下面结合具体实施例对本发明进行详细说明。以下实施例将有助于本领域的技术人员进一步理解本发明，但不以任何形式限制本发明。应当指出的是，对本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变化和改进。这些都属于本发明的保护范围。The present invention will be described in detail below with reference to specific embodiments. The following examples will help those skilled in the art to further understand the present invention, but do not limit the present invention in any form. It should be noted that, for those skilled in the art, several changes and improvements can be made without departing from the inventive concept. These all belong to the protection scope of the present invention.

如图3所示，本发明提供的一种塑封功率模块，包括：基板1、电子元器件2、金属管4、环氧树脂层6和金属端子5。邦定线3用于实现各部分之间的电路连接。基板1采用DBC基板(双面覆铜陶瓷基板)，电子元器件2和金属管4连接在基板1上，基板1、电子元器件2和金属管4塑封通过环氧树脂层6塑封。环氧树脂层6的作用是防腐防潮保护内部电路，同时又对内部各部件进行高压隔离。金属管4一端连接在基板1上，另一端与环氧树脂层6的外部空间连通，金属端子5的一端穿过金属管4连接在基板1上，用于连接外部的电气电路。As shown in FIG. 3 , a plastic encapsulated power module provided by the present invention includes: a substrate 1 , an electronic component 2 , a metal tube 4 , an epoxy resin layer 6 and a metal terminal 5 . The bonding wire 3 is used to realize the circuit connection between the various parts. The substrate 1 is a DBC substrate (double-sided copper-clad ceramic substrate). Electronic components 2 and metal tubes 4 are connected to the substrate 1 . The function of the epoxy resin layer 6 is to protect the internal circuit from corrosion and moisture, and at the same time to isolate the internal components from high voltage. One end of the metal tube 4 is connected to the substrate 1 , and the other end is communicated with the external space of the epoxy resin layer 6 .

设置金属管的目的是为了在环氧树脂固化后再将金属端子连接到基板上，如此的结构设计，增大了金属端子之间的绝缘距离，和金属端子到外部散热片之间的绝缘距离，同时减小功率模块的体积。The purpose of setting the metal tube is to connect the metal terminal to the substrate after the epoxy resin is cured. This structural design increases the insulation distance between the metal terminals and the insulation distance between the metal terminal and the external heat sink. , while reducing the size of the power module.

而在环氧树脂固化的工艺中，为了防止环氧树脂进入金属管内部有两种实现方案：1、设计专门的塑封模具；2、使用一端开口一端密封的金属管。In the epoxy resin curing process, in order to prevent the epoxy resin from entering the inside of the metal tube, there are two implementation solutions: 1. Design a special plastic sealing mold; 2. Use a metal tube with one end open and one end sealed.

针对于第一种方案，如图4所示，本发明还提供的一种塑封模具，用于制造上述塑封功率模块，塑封模具包括上模7和下模8。上模7或下模8上设置有功率模块固定部，对应的，下模8或上模7上滑动连接有可动柱9，可动柱9的位置与金属管4的位置相对应，在合模状态下，可动柱9能够封闭金属管4的另一端。上模和下模之间设置有密封圈10，防止环氧树脂溢出。For the first solution, as shown in FIG. 4 , the present invention further provides a plastic-encapsulation mold for manufacturing the above-mentioned plastic-encapsulated power module. The plastic-encapsulation mold includes an upper mold 7 and a lower mold 8 . The upper die 7 or the lower die 8 is provided with a power module fixing part, and correspondingly, a movable column 9 is slidably connected to the lower die 8 or the upper die 7, and the position of the movable column 9 corresponds to the position of the metal tube 4. In the clamping state, the movable column 9 can close the other end of the metal pipe 4 . A sealing ring 10 is arranged between the upper mold and the lower mold to prevent the epoxy resin from overflowing.

采用这种塑封模具的工艺如下：The process of using this plastic sealing mold is as follows:

S1、将待塑封功率模块固定在上模或下模，金属管两端开口，金属管的另一端对应朝向下模或上模。S1. Fix the power module to be molded on the upper mold or the lower mold, the two ends of the metal tube are open, and the other end of the metal tube faces the lower mold or the upper mold correspondingly.

S2、合模，使可动柱封闭金属管的另一端。S2. Clamp the mold so that the movable column closes the other end of the metal tube.

S3、向塑封模具内注入液态环氧树脂。S3, inject liquid epoxy resin into the plastic sealing mold.

S4、在液态环氧树脂完全固化前抽出可动柱(完全固化后可动柱将无法抽出)。S4. Pull out the movable column before the liquid epoxy resin is completely cured (the movable column will not be able to be pulled out after it is completely cured).

S5、将金属端子插入金属管，与基板形成电气连接。S5. Insert the metal terminal into the metal tube to form an electrical connection with the substrate.

针对于第二种方案，需要使用原始状态为一端开口一端密封的金属管，开口端通过焊接、烧结的方式连接在基板上，密封端位于所述环氧树脂层内部。密封端通过切割或研磨的方式去除密封端，使环氧树脂层的外壁齐平。金属端子可以是常规金属端子，可以是带有压接端的金属端子(Press Fit)。For the second solution, it is necessary to use a metal tube whose original state is open at one end and sealed at the other end, the open end is connected to the substrate by welding and sintering, and the sealed end is located inside the epoxy resin layer. Sealed ends are removed by cutting or grinding to make the outer walls of the epoxy layer flush. The metal terminal may be a conventional metal terminal or a metal terminal (Press Fit) with a crimping end.

可以通过如下多种不同的金属管4结构来制造和实现：It can be manufactured and realized by a variety of different metal tube 4 structures as follows:

实施例1Example 1

如图5所示，金属管的原始状态为一体式的一端开口一端密封的结构，金属管可以是铜管、铝管等，端密封的厚度在0.1mm到0.5mm。开口端通过焊接、烧结的方式连接在基板上，通过压注模塑封(Transfer molding)或者压缩模塑封(Compression molding)将功率模块的各个器件包括金属管使用环氧树脂固封，环氧树脂需要略高于金属管外端0.1mm到0.5mm。再将环氧树脂表面进行研磨，直至将金属管的密封端去除，露出管孔。此时再将金属端子通过压力或者冲压的方式压入金属管内部，与基板形成电气连接。As shown in Figure 5, the original state of the metal tube is an integrated structure with one end open at one end and one end sealed. The open end is connected to the substrate by welding and sintering, and each device of the power module, including the metal tube, is sealed with epoxy resin by transfer molding or compression molding. Slightly higher than the outer end of the metal tube 0.1mm to 0.5mm. The epoxy resin surface is then ground until the sealed end of the metal tube is removed and the tube hole is exposed. At this time, the metal terminal is pressed into the inside of the metal tube by pressure or punching to form an electrical connection with the substrate.

实施例2Example 2

如图6所示，由于实施例1中一体式的金属管加工成本较高，本实施例使用两端开口的金属管5，使用一面带有粘结剂52的盖板51将金属管5的一端闭塞。盖板51的厚度在0.1mm到0.5mm，盖板51的材料可以为金属(如铜，铝等)，工程塑料等。工程塑料和粘结剂的耐温温度要高于塑封工艺时的温度(塑封时的问题一般在150度到200度)。As shown in FIG. 6 , due to the high processing cost of the one-piece metal tube in Embodiment 1, this embodiment uses the metal tube 5 with open ends at both ends, and uses a cover plate 51 with adhesive 52 on one side to seal the metal tube 5 . One end is blocked. The thickness of the cover plate 51 is 0.1 mm to 0.5 mm, and the material of the cover plate 51 can be metal (such as copper, aluminum, etc.), engineering plastics, and the like. The temperature resistance temperature of engineering plastics and adhesives is higher than that of the plastic sealing process (the problem during plastic sealing is generally 150 degrees to 200 degrees).

实施例3Example 3

如图7所示，由于实施例1中一体式的金属管加工成本较高，使用两端开口的金属管5，使用一个盖帽53，盖帽53的顶部厚度在0.1mm到0.5mm，盖帽的内直径必须略小于铜管的外直径，达到过盈配合，保证盖帽安装到铜管一侧时连接紧密，在塑封过程中，溶解的树脂不会流入到铜管之中。盖帽的材料可以为金属(如铜，铝等)，工程塑料等。工程塑料的耐温温度要高于塑封工艺时的温度(塑封时的问题一般在150度到200度)。As shown in FIG. 7 , due to the high processing cost of the one-piece metal tube in Embodiment 1, a metal tube 5 with two ends open is used, and a cap 53 is used. The diameter must be slightly smaller than the outer diameter of the copper tube to achieve an interference fit to ensure a tight connection when the cap is installed on one side of the copper tube. During the plastic sealing process, the dissolved resin will not flow into the copper tube. The material of the cap can be metal (such as copper, aluminum, etc.), engineering plastics, etc. The temperature resistance of engineering plastics is higher than the temperature during the plastic sealing process (the problem during plastic sealing is generally 150 degrees to 200 degrees).

实施例4Example 4

如图8所示，由于实施例1中一体式的金属管加工成本较高，本实施例使用一个棒状的填充物54塞入金属管5的一端使其密封。为了保证需要的研磨厚度不会过大，填充物54的厚度在0.5mm到1mm。填充物的外直径必须略大于铜管的内直径，达到过盈配合，保证棒状填充物安装到铜管一侧时连接紧密，在塑封过程中，溶解的树脂不会流入到铜管之中。填充物的材料可以为金属(如铜，铝等)，工程塑料等。工程塑料的耐温温度要高于塑封工艺时的温度(塑封时的问题一般在150度到200度)。As shown in FIG. 8 , since the processing cost of the one-piece metal tube in Embodiment 1 is relatively high, in this embodiment, a rod-shaped filler 54 is used to insert one end of the metal tube 5 to seal it. In order to ensure that the required grinding thickness is not too large, the thickness of the filler 54 is 0.5 mm to 1 mm. The outer diameter of the filler must be slightly larger than the inner diameter of the copper tube to achieve an interference fit to ensure that the rod-shaped filler is tightly connected when installed on one side of the copper tube. During the plastic sealing process, the dissolved resin will not flow into the copper tube. The material of the filler can be metal (such as copper, aluminum, etc.), engineering plastics, and the like. The temperature resistance of engineering plastics is higher than the temperature during the plastic sealing process (the problem during plastic sealing is generally 150 degrees to 200 degrees).

实施例1至4的塑封功率模块的塑封方法，包括步骤：The plastic encapsulation method of the plastic encapsulated power module of the embodiments 1 to 4 includes the steps:

S1、将待塑封功率模块固定在塑封模具的上模或下模，金属管的密封端对应朝向下模或上模。S1. Fix the power module to be molded on the upper mold or the lower mold of the plastic molding mold, and the sealing end of the metal tube corresponds to the lower mold or the upper mold.

S2、合模后向塑封模具内注入液态环氧树脂。S2. After the mold is closed, the liquid epoxy resin is injected into the plastic sealing mold.

S3、在液态环氧树脂固化后，通过切割或研磨去除密封端。S3. After the liquid epoxy resin is cured, the sealing end is removed by cutting or grinding.

S4、将金属端子插入金属管，与基板形成电气连接。S4, inserting the metal terminal into the metal tube to form an electrical connection with the substrate.

实施例5Example 5

如图9所示，考虑到实施例4中需要研磨的厚度交大，加大了加工时间。本将长度为1mm到3mm的棒状填充物塞入金属管后，进行塑封，塑封后只研磨掉铜管上方的环氧树脂后，将金属端子(一般为导电性较好的铜)或者带有Pressfit功能的金属端子通过压力或者冲压的方式与棒状填充物一起压入金属管形成电气连接用端子。棒状填充物在金属端子下方。棒状填充物的材料可以为金属(如铜，铝等)，工程塑料等。工程塑料的耐温温度要高于塑封工艺时的温度(塑封时的问题一般在150度到200度)。As shown in FIG. 9, considering that the thickness required to be ground in Example 4 is too large, the processing time is increased. The rod-shaped filler with a length of 1mm to 3mm is inserted into the metal tube, and then plastic-sealed. After plastic-sealing, only the epoxy resin above the copper tube is ground off, and the metal terminal (usually copper with better conductivity) or with The metal terminal of the Pressfit function is pressed into the metal tube together with the rod-shaped filler by pressing or punching to form the terminal for electrical connection. Rod fillers are below the metal terminals. The material of the rod-shaped filler can be metal (such as copper, aluminum, etc.), engineering plastics, and the like. The temperature resistance of engineering plastics is higher than the temperature during the plastic sealing process (the problem during plastic sealing is generally 150 degrees to 200 degrees).

在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。In the description of this application, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", The orientation or positional relationship indicated by "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying the indicated device. Or elements must have a particular orientation, be constructed and operate in a particular orientation, and therefore should not be construed as a limitation of the present application.

以上对本发明的具体实施例进行了描述。需要理解的是，本发明并不局限于上述特定实施方式，本领域技术人员可以在权利要求的范围内做出各种变化或修改，这并不影响本发明的实质内容。在不冲突的情况下，本申请的实施例和实施例中的特征可以任意相互组合。Specific embodiments of the present invention have been described above. It should be understood that the present invention is not limited to the above-mentioned specific embodiments, and those skilled in the art can make various changes or modifications within the scope of the claims, which do not affect the essential content of the present invention. The embodiments of the present application and features in the embodiments may be combined with each other arbitrarily, provided that there is no conflict.

Claims (10)

1. A plastic package power module, comprising: the device comprises a substrate, an electronic component, a metal tube, an epoxy resin layer and a metal terminal;
the electronic component and the metal tube are connected to the substrate;
the substrate, the electronic component and the metal tube are plastically packaged through the epoxy resin layer;
one end of the metal tube is connected to the substrate, and the other end of the metal tube is communicated with the external space of the epoxy resin layer;
one end of the metal terminal penetrates through the metal pipe to be connected to the substrate.
2. The plastic package power module as defined in claim 1, wherein the other end of the metal tube is flush with an outer wall of the epoxy layer.
3. A plastic package power module according to claim 1, wherein the metal tube is welded or sintered on the substrate.
4. A plastic package power module according to claim 1, wherein the metal terminals comprise metal terminals with crimp ends.
5. The plastic package power module according to claim 1, wherein the metal tube is in an original state of a structure with an open end and a sealed end, the open end is connected to the substrate, and the sealed end is located inside the epoxy resin layer;
and after the epoxy resin layer is cured, removing the sealing end of the metal tube and the corresponding epoxy resin in a cutting and grinding mode.
6. The plastic package power module of claim 5, wherein the sealing end comprises: an integrated sealing structure, a cover plate sealing structure, a cap sealing structure or a filling sealing structure;
the cover plate sealing structure comprises a cover plate, wherein the cover plate is bonded to the end part of the metal tube through an adhesive so as to form the sealing end;
the cap sealing structure comprises a cap, and the cap is in interference fit with the outer wall of the end part of the metal pipe so as to form the sealing end;
the filling and sealing structure comprises a filler, and the filler is in interference fit with the inner wall of the end part of the metal pipe so as to form the sealing end.
7. The plastic package power module as claimed in claim 6, wherein the cover plate, the adhesive, the cap, and the filler are resistant to temperature higher than a plastic package process temperature of epoxy resin.
8. A plastic package mold for manufacturing the plastic package power module of claim 1, the mold comprising an upper mold and a lower mold;
a power module fixing part is arranged on the upper die or the lower die;
and a movable column is connected to the lower die or the upper die in a sliding manner, the position of the movable column corresponds to that of the metal tube, and the movable column can seal the other end of the metal tube in a die closing state.
9. A method for plastic packaging of a plastic packaged power module, characterized in that, with the plastic packaging mold of claim 8, the execution steps comprise:
s1, fixing the power module to be plastically packaged on the upper die or the lower die, wherein two ends of the metal tube are open, and the other end of the metal tube correspondingly faces the lower die or the upper die;
s2, closing the die to enable the movable column to close the other end of the metal tube;
s3, injecting liquid epoxy resin into the plastic package mold;
s4, drawing out the movable column before the liquid epoxy resin is completely cured;
and S5, inserting a metal terminal into the metal tube to form electrical connection with the substrate.
10. A method for plastic packaging of a plastic packaged power module according to claim 1, comprising the steps of:
s1, fixing the power module to be plastically packaged on an upper die or a lower die of the plastic packaging die, wherein the sealing end of the metal tube correspondingly faces the lower die or the upper die;
s2, injecting liquid epoxy resin into the plastic package mold after mold closing;
s3, after the liquid epoxy resin is solidified, cutting or grinding to remove the sealing end;
and S4, inserting a metal terminal into the metal tube to form electrical connection with the substrate.
CN202010705491.5A 2020-07-21 2020-07-21 Plastic packaging power module, plastic packaging mold and plastic packaging method Pending CN111769090A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022063283A1 (en) * 2020-09-28 2022-03-31 华为技术有限公司 Semiconductor encapsulation structure and manufacturing method therefor, and semiconductor device
CN119170529A (en) * 2024-09-20 2024-12-20 无锡利普思半导体有限公司 Terminal packaging jig and power module packaging method
CN119170528A (en) * 2024-09-20 2024-12-20 无锡利普思半导体有限公司 Universal packaging jig and power module packaging method
CN120376528A (en) * 2025-05-08 2025-07-25 杭州瑞莱芯微电子科技有限公司 Multi-chip integrated module, manufacturing method thereof and multi-chip integrated system
US12389553B2 (en) 2022-11-22 2025-08-12 Delta Electronics, Inc. Method for forming power module package, power module package and electronic device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100117219A1 (en) * 2007-01-22 2010-05-13 Mitsubishi Electric Corporation Power semiconductor device
JP2011187819A (en) * 2010-03-10 2011-09-22 Mitsubishi Electric Corp Resin sealed power module and method of manufacturing the same
CN105225971A (en) * 2014-06-27 2016-01-06 三菱电机株式会社 The manufacture method of semiconductor device
CN110913604A (en) * 2018-09-14 2020-03-24 富士电机株式会社 Semiconductor device and method for manufacturing semiconductor device
CN212342611U (en) * 2020-07-21 2021-01-12 无锡利普思半导体有限公司 Plastic package power module and plastic package mold

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100117219A1 (en) * 2007-01-22 2010-05-13 Mitsubishi Electric Corporation Power semiconductor device
JP2011187819A (en) * 2010-03-10 2011-09-22 Mitsubishi Electric Corp Resin sealed power module and method of manufacturing the same
CN105225971A (en) * 2014-06-27 2016-01-06 三菱电机株式会社 The manufacture method of semiconductor device
CN110913604A (en) * 2018-09-14 2020-03-24 富士电机株式会社 Semiconductor device and method for manufacturing semiconductor device
CN212342611U (en) * 2020-07-21 2021-01-12 无锡利普思半导体有限公司 Plastic package power module and plastic package mold

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022063283A1 (en) * 2020-09-28 2022-03-31 华为技术有限公司 Semiconductor encapsulation structure and manufacturing method therefor, and semiconductor device
US12389553B2 (en) 2022-11-22 2025-08-12 Delta Electronics, Inc. Method for forming power module package, power module package and electronic device
CN119170529A (en) * 2024-09-20 2024-12-20 无锡利普思半导体有限公司 Terminal packaging jig and power module packaging method
CN119170528A (en) * 2024-09-20 2024-12-20 无锡利普思半导体有限公司 Universal packaging jig and power module packaging method
CN120376528A (en) * 2025-05-08 2025-07-25 杭州瑞莱芯微电子科技有限公司 Multi-chip integrated module, manufacturing method thereof and multi-chip integrated system

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Application publication date: 20201013