CN111711466A - A three-channel UWB radio frequency front-end module - Google Patents

Abstract

The invention discloses a three-channel UWB radio frequency front-end module, comprising a low-noise amplifier of a receiving channel (RX), a power amplifier of a transmitting channel (TX), a bypass channel that can be selected as a transmitting/receiving channel according to actual needs, a high-speed radio frequency Switch and control circuit; the present invention can realize miniaturization by fully integrating receiving and transmitting low-noise amplifiers on the chip; introducing bypass channels can increase the dynamic range of the receiving channels of the system; ensuring that the low-noise amplifier (power Amplifier) is off, while ensuring that both the LNA and the power amplifier are off during bypass operation allows for low power consumption.

Description

A three-channel UWB radio frequency front-end module

technical field

The invention relates to the technical field of wireless radio frequency communication, in particular to a three-channel UWB radio frequency front-end module applicable in the fields of UWB ranging, communication and positioning.

Background technique

The full name of UWB is ultra wide band, that is, ultra wide band. UWB technology is a wireless carrier communication technology that uses a frequency bandwidth above 1 GHz. It does not use a sine carrier, but uses nanosecond non-sinusoidal narrow pulses to transmit data, so it occupies a large spectrum range. Although wireless communication is used, its data transmission rate can reach hundreds of megabits per second or more. . Using UWB technology can transmit signals in a very wide bandwidth. The US Federal Communications Commission (FCC) stipulates that UWB technology is: occupying more than 500MHz of bandwidth in the 3.1-10.6GHz frequency band.

In UWB applications, it is necessary to transmit signals and then receive echo signals. Taking UWB positioning and ranging applications as an example, current UWB chips have both baseband signal processing capabilities and modulated signal output functions. Ranging and positioning application systems are basically TDD working modes. In order to measure or locate longer distances, the output carrier signal of the UWB chip needs to be amplified by a power amplifier and then transmitted through an antenna. The transmitted signal encounters the signal reflected by the target. , after receiving through the antenna, it is input to the UWB baseband chip through low-noise amplification; when the echo signal is strong, the low-noise amplifier of the receiving channel will cause signal distortion due to its low linearity. Receive processing, that is, the receive channel expects a high dynamic range. In order to realize the above functions, the traditional method is to mix and integrate two discrete switches, a low noise amplifier and a power amplifier, which results in a huge volume of the device. Since the low noise amplifier and the power amplifier are always in working state, the Power consumption is large. Furthermore, due to the low linearity of the LNA, the dynamic range of the system receiving channel is poor.

SUMMARY OF THE INVENTION

The technical problem to be solved by the present invention is that the current UWB system faces the problems of large volume, high power consumption or poor dynamic range. The present invention provides a three-channel UWB radio frequency front-end module.

The present invention is achieved through the following technical solutions:

A three-channel UWB radio frequency front-end module, comprising a low-noise amplifier of a receiving channel RX, a power amplifier of a transmitting channel TX, a bypass channel, a high-speed radio frequency switch and a control circuit;

Wherein, the high-speed RF switch includes two sets of single-pole, three-throw switches, the first set of single-pole, three-throw switches is connected to the transmit/receive antenna, and the first port of the first set of single-pole, three-throw switches is connected to the low-noise amplifier receiving the channel RX. The input port is connected, the second port is connected with the bypass channel, and the third port is connected with the output port of the power amplifier of the transmit channel TX; the second group of single-pole three-throw switches is connected with the baseband circuit, and the first One port is connected with the output port of the low noise amplifier of the receiving channel RX, the second port is connected with the bypass channel, and the third port is connected with the input port of the power amplifier of the transmitting channel TX;

The bypass channel is selected as a transmitting channel or a receiving channel according to actual needs;

The control circuit is respectively connected with the control ports of the first group of single-pole three-throw switches, the second group of single-pole three-throw switches, the low-noise amplifier and the power amplifier.

The invention realizes miniaturization by fully integrating the receiving channel RX and the transmitting channel TX on the chip, and introduces a bypass channel to increase the dynamic range of the system, and controls two sets of single-pole three-throw switches through the control circuit to realize the transmitting channel, the receiving channel and the bypass channel. Fast switching between the two, while ensuring that the LNA (power amplifier) is off in the transmit (receive) state, and ensuring that both the LNA and the power amplifier are off during bypass operation enables low power consumption.

Preferably, the control circuit of the present invention simultaneously controls the working states of two sets of single-pole, three-throw switches to realize channel selection, and simultaneously controls the working states of the power amplifier of the transmitting channel TX and the low-noise amplifier of the receiving channel RX, so that the front-end module can transmit Fast switching between channels, receive channels and bypass channels.

Preferably, the low noise amplifier of the receiving channel RX of the present invention has a shutdown function, and when the power amplifier or the bypass channel of the transmitting channel TX is working, the low noise amplifier of the receiving channel RX is in a shutdown state.

Preferably, the power amplifier of the transmitting channel TX of the present invention has a shutdown function, and when the low noise amplifier or the bypass channel of the receiving channel RX is working, the power amplifier of the transmitting channel TX is in a shutdown state.

Preferably, both the power amplifier of the transmitting channel TX and the low noise amplifier of the receiving channel RX of the present invention use a gate bias circuit to realize the shutdown function.

The present invention has the following advantages and beneficial effects:

1. The present invention directly integrates the receiving channel, the transmitting channel and two sets of single-pole three-throw switches on the chip, and through the control of the control circuit, the front-end module can be quickly switched between the transmitting channel, the receiving channel and the bypass channel, and the receiving channel can be controlled at the same time. , transmit channel and bypass channel to achieve miniaturization and increase system dynamic range.

2. The present invention also ensures that the low-noise amplifier (power amplifier) is in a closed state in the transmitting (receiving) state by setting a shutdown function circuit in the low-noise amplifier of the receiving channel and the power amplifier of the transmitting channel, through the control of the control circuit, Low power consumption can be achieved by ensuring that both the LNA and the PA are turned off during bypass operation.

Description of drawings

The accompanying drawings described herein are used to provide further understanding of the embodiments of the present invention, and constitute a part of the present application, and do not constitute limitations to the embodiments of the present invention. In the attached image:

FIG. 1 is a schematic structural diagram of a radio frequency front end of the present invention.

FIG. 2 is a schematic structural diagram of a single-pole three-throw switch circuit of the present invention.

FIG. 3 is a schematic diagram of the control principle of the present invention.

FIG. 4 is a schematic structural diagram of an amplifier with a gate turn-off function of the present invention.

FIG. 5 is the gain of the receiving channel of the three-channel UWB radio frequency front-end module of the present invention.

FIG. 6 is the gain of the transmit channel of the three-channel UWB radio frequency front-end module of the present invention.

FIG. 7 is the insertion loss of the bypass channel of the three-channel UWB radio frequency front-end module of the present invention.

Detailed ways

Hereinafter, the terms "comprising" or "may include" as may be used in various embodiments of the present invention indicate the presence of an invented function, operation or element and do not limit the identity of one or more functions, operations or elements Increase. Furthermore, as used in various embodiments of the present invention, the terms "comprising", "having" and their cognates are only intended to mean a particular feature, number, step, operation, element, component or combination of the foregoing, and should not be construed as first excluding the presence of or adding one or more other features, numbers, steps, operations, elements, components or combinations of the foregoing or the possibility of a combination of the foregoing.

In various embodiments of the invention, the expression "or" or "at least one of A or/and B" includes any and all combinations of the words listed at the same time. For example, the expressions "A or B" or "at least one of A or/and B" may include A, may include B, or may include both A and B.

Expressions (such as "first", "second", etc.) used in the various embodiments of the present invention may modify various constituent elements in the various embodiments, but may not limit the corresponding constituent elements. For example, the above expressions do not limit the order and/or importance of the elements described. The above expressions are only used for the purpose of distinguishing one element from other elements. For example, the first user device and the second user device indicate different user devices, although both are user devices. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of various embodiments of the present invention.

It should be noted that if a constituent element is described as being "connected" to another constituent element, the first constituent element may be directly connected to the second constituent element, and the "connection" between the first constituent element and the second constituent element may be "The third component. On the contrary, when one constituent element is "directly connected" to another constituent element, it can be understood that the third constituent element does not exist between the first constituent element and the second constituent element.

The terminology used in the various embodiments of the present invention is for the purpose of describing particular embodiments only and is not intended to limit the various embodiments of the present invention. As used herein, the singular is intended to include the plural as well, unless the context clearly dictates otherwise. Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which various embodiments of this invention belong. The terms (such as those defined in commonly used dictionaries) will be interpreted as having the same meaning as the contextual meaning in the relevant technical field and will not be interpreted as having an idealized or overly formal meaning, unless explicitly defined in the various embodiments of the present invention.

In order to make the purpose, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the embodiments and the accompanying drawings. as a limitation of the present invention.

Example 1

This embodiment proposes a three-channel UWB radio frequency front-end module.

As shown in FIG. 1 , the three-channel UWB radio frequency front-end module in this embodiment includes: (FEM, Front-end module). Including the low noise amplifier of the receiving channel (RX), the power amplifier of the transmitting channel (TX), the bypass channel that can be selected as the transmitting channel or the receiving channel according to actual needs, high-speed RF switch and control circuit.

The high-speed switch is composed of two sets of single-pole, three-throw switches. The first set of single-pole, three-throw switches is connected to the transmitting (receiving) antenna, the first port of which is connected to the input port of the low-noise amplifier of the receiving channel, and the second port is connected to the bypass channel. , the third port is connected to the output port of the power amplifier of the transmitting channel; the second group of single-pole three-throw switches is connected to the baseband circuit, the first port of which is connected to the output port of the low-noise amplifier of the receiving channel, and the second port is connected to the bypass channel. , the third port is connected with the input port of the power amplifier of the transmit channel.

The control signal output end of the control circuit is respectively connected to each group of single-pole double-throw switch circuits, a low-noise amplifier and a power amplifier.

The single-pole, three-throw switch circuit of this embodiment is shown in FIG. 2 , the RFin of the SP3-throw switch is the signal input terminal, and the RFout1-3 are three signal output terminals. When the control circuit outputs the control signal, it is used to control M ₀₁ -M ₀₃ The gating of the single-pole three-throw switch can be realized.

As shown in Figure 3, the control circuit controls the switch control circuit and the amplifier shut-off circuit at the same time, the synchronous control circuit controls the switch to realize the channel selection, and the synchronous control circuit is connected to the control circuit of the amplifier at the same time to achieve the purpose of low power consumption, Make sure that when the power amplifier (low-noise amplifier) of the transmit (receive) channel is working, the low-noise amplifier (power amplifier) of the receive (transmit) channel is turned off; when the bypass channel is working, the power amplifier of the transmit channel and the receive The LNAs of the channels are all turned off to achieve low power consumption, as follows:

1) When the three-channel UWB RF front-end circuit works in the receiving mode, ensure that the power amplifier of the transmitting channel is turned off;

2) When the three-channel UWB RF front-end circuit works in the transmit mode, ensure that the low-noise amplifier of the receive channel is turned off;

3) When the three-channel UWB RF front-end circuit works in the bypass state, ensure that the power amplifier of the transmitting channel and the low-noise amplifier of the receiving channel are both in the off state.

This embodiment provides a multi-channel, small size, low power consumption and fast switching speed module circuit for the UWB radio frequency front end.

Example 2

This embodiment further optimizes the power amplifier of the transmission channel TX and the low noise amplifier of the reception channel RX proposed in the above-mentioned first embodiment.

The power amplifier of the transmitting channel TX and the low-noise amplifier of the receiving channel RX in this embodiment can be implemented by an amplifier with a gate-off function circuit as shown in FIG. 4 , and by controlling the on-off of the gate bias voltage, To realize the on and off of the amplifier.

As shown in FIG. 4 , the amplifier of this embodiment includes capacitor C ₁ , capacitor C ₂ , capacitor C ₃ , inductor L _D1 , inductor L _D2 , inductor L ₁ , inductor L ₂ , inductor L ₃ , inductor L _G1 , inductor L _G2 , inductor L _S1 , inductor L _S2 , transistor M ₀ , transistor M ₁ , and transistor M ₂ .

The signal input terminal _of the amplifier is sequentially connected to the gate _of the transistor M1 through the capacitor _C1 and the inductor L1, the control voltage _VEN for _turning on/off the amplifier is input to the gate of the transistor _M0 , and the source of the transistor M0 is grounded , the drain of the transistor M ₀ is connected to one end of the inductor L _G1 , the drain of the transistor M ₀ is also connected to the gate voltage V _G of the amplifier, the other end of the inductor L _G1 is connected to the gate of the transistor M ₁ , and the transistor M ₁ The source of the transistor M1 is connected to the ground through the inductor L _S1 , the drain of the transistor M1 is connected to _one end of the inductor L _D1 , the other end of the inductor L _D1 is connected to the amplifier drain voltage V _DD , and one end of the inductor L ₂ is connected to the drain _of the transistor M1 Connection, the other end of the inductor L2 is connected to one end of the capacitor _C2 , the other end of the capacitor _C2 is connected to the gate of the transistor _M2 , one end of the inductor L _G2 is connected to the gate of the transistor _M2 , and the other end of the inductor L _G2 is connected to the gate of the transistor _M2 . One end is connected to the gate voltage V _G of the amplifier, the source of the transistor _M2 is grounded through the inductor L _S2 , the drain of the transistor _M2 is connected to one end of the inductor L _D2 , and the other end of the inductor L _D2 is connected to the amplifier drain voltage V _DD One end _of the inductor L3 is connected to the drain of the transistor _M2 , the other end of the inductor L3 is connected to one end _of the capacitor C3, and the other end _of the capacitor C3 is connected to the signal output end _of the amplifier.

When V _EN is high, the amplifier gate is biased to 0V and the amplifier is turned off.

When V _EN is low, the amplifier gate is biased at V _G and the amplifier operates.

Example 3

This embodiment performs a performance simulation test on the three-channel UWB radio frequency front-end module proposed in the above-mentioned embodiment, and obtains the gain diagrams of the receiving channel and the transmitting channel and the insertion loss diagram of the bypass channel as shown in Figure 5-7.

As shown in Figure 5, the gain of the receive channel RX is greater than 14dB in the 4.5 to 7.5GHz frequency band. At this time, the power amplifier of the transmit channel TX is in an off state, and there is no current consumption.

As shown in Figure 6, the gain of the transmit channel TX is greater than 6.5dB in the frequency range from 4.5 to 7.5GHz. At this time, the low noise amplifier of the receiving channel RX is in the off state, and there is no current consumption;

As shown in Figure 7, the bypass channel is less than 2.5dB in the 4.5 to 7.5GHz frequency band. At this time, the power amplifier of the transmit channel TX and the low-noise amplifier of the receive channel RX are off, and there is no current consumption.

The specific embodiments described above further describe the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above descriptions are only specific embodiments of the present invention and are not intended to limit the scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims (5)

1. A three-channel UWB radio frequency front end module is characterized by comprising a low noise amplifier of a receiving channel RX, a power amplifier of a transmitting channel TX, a bypass channel, a high-speed radio frequency switch and a control circuit;

the high-speed radio frequency switch comprises two groups of single-pole three-throw switches, wherein the first group of single-pole three-throw switches are connected with a transmitting/receiving antenna, a first port of the first group of single-pole three-throw switches is connected with an input port of a low noise amplifier of a receiving channel RX, a second port of the first group of single-pole three-throw switches is connected with a bypass channel, and a third port of the first group of single-pole three-throw switches is connected with an output port of a power amplifier of a transmitting; the second group of single-pole three-throw switches are connected with a baseband circuit, a first port of each second group of single-pole three-throw switches is connected with a low-noise amplifier output port of a receiving channel RX, a second port of each second group of single-pole three-throw switches is connected with a bypass channel, and a third port of each second group of single-pole three-throw switches is connected with an input port of a power amplifier of a transmitting channel TX;

the bypass channel is selected as a transmitting channel or a receiving channel according to actual needs;

the control circuit is respectively connected with the control ports of the first group of single-pole three-throw switches, the second group of single-pole three-throw switches, the low-noise amplifier and the power amplifier.

2. The three-channel UWB rf front-end module of claim 1 wherein the control circuit controls the operation of two sets of single-pole-three-throw switches simultaneously to realize the channel selection, and controls the operation of the power amplifier of the TX channel and the low-noise amplifier of the RX channel simultaneously to realize the fast switching of the front-end module among the TX channel, the RX channel and the bypass channel.

3. The three-channel UWB rf front-end module according to claim 2, characterized in that the low noise amplifier of the receiving channel RX has a turn-off function, and the low noise amplifier of the receiving channel RX is in a turn-off state when the power amplifier or the bypass channel of the transmitting channel TX is in operation.

4. The three-channel UWB rf front-end module according to claim 2, characterized in that the power amplifier of the transmit channel TX has a turn-off function, and is in a turn-off state when the low noise amplifier or the bypass channel of the receive channel RX is in operation.

5. The three-channel UWB radio frequency front-end module according to any of claims 1-4, wherein the power amplifier of the transmitting channel TX and the low noise amplifier of the receiving channel RX both use gate bias circuit to realize the switch-off function.

Images