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CN111640816B - Heterojunction solar cell, laminated tile assembly and manufacturing method - Google Patents

Heterojunction solar cell, laminated tile assembly and manufacturing method Download PDF

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Publication number
CN111640816B
CN111640816B CN202010525759.7A CN202010525759A CN111640816B CN 111640816 B CN111640816 B CN 111640816B CN 202010525759 A CN202010525759 A CN 202010525759A CN 111640816 B CN111640816 B CN 111640816B
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layer
doped layer
amorphous silicon
thin film
intrinsic amorphous
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CN111640816A (en
Inventor
薛建锋
王月斌
余义
苏世杰
王秀鹏
石刚
李岩
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Tongwei Solar Jintang Co Ltd
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Chengdu Yefan Science and Technology Co Ltd
Tongwei Solar Jintang Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)

Abstract

本发明提供了一种异质结太阳能电池片、叠瓦组件和制造异质结太阳能电池片的方法。异质结太阳能电池片包括衬底层、本征非晶硅薄膜层、掺杂层、透光导电层以及电极。位于衬底层顶侧和底侧的本征非晶硅薄膜层均包括四层结构，这四层结构彼此不同。根据本发明，衬底层的顶侧和底侧的本征非晶硅薄膜层结构均包括四层结构，这四层结构彼此的成分均不相同，组合在一起能够较大程度地发挥出本征非晶硅薄膜层的优势，并能够提升太阳能电池片整体的电性能或效率。

The present invention provides a heterojunction solar cell, a shingled assembly and a method for manufacturing a heterojunction solar cell. The heterojunction solar cell comprises a substrate layer, an intrinsic amorphous silicon thin film layer, a doping layer, a light-transmitting conductive layer and an electrode. The intrinsic amorphous silicon thin film layer located on the top and bottom sides of the substrate layer each comprises a four-layer structure, and the four-layer structures are different from each other. According to the present invention, the intrinsic amorphous silicon thin film layer structure on the top and bottom sides of the substrate layer each comprises a four-layer structure, and the components of the four-layer structures are different from each other. When combined together, the advantages of the intrinsic amorphous silicon thin film layer can be brought into play to a greater extent, and the overall electrical performance or efficiency of the solar cell can be improved.

Description

Heterojunction solar cell, laminated tile assembly and manufacturing method
Technical Field
The invention relates to the field of energy, in particular to a heterojunction solar cell, a shingle assembly and a manufacturing method of the heterojunction solar cell.
Background
With the increase of the consumption speed of conventional fossil energy such as global coal, petroleum, natural gas and the like, the ecological environment is continuously worsened, and particularly, the increasingly serious global climate change is caused by the emission of greenhouse gases, so that the sustainable development of the human society is seriously threatened. The world disputes and establishes respective energy development strategies to cope with the environmental problems caused by the limitation and development and utilization of conventional fossil energy resources. Solar energy has become one of the most important renewable energy sources by virtue of the characteristics of reliability, safety, universality, longevity, environmental protection and resource sufficiency, and is expected to become a main support for future global power supply.
In the new energy source transformation process, the photovoltaic industry in China has grown into a strategic emerging industry with international competitive advantage. However, the development of the photovoltaic industry still faces a plurality of problems and challenges, the conversion efficiency and reliability are the biggest technical obstacles restricting the development of the photovoltaic industry, and the cost control and the scale are also economically restricted.
At present, heterojunction solar cells are known as the next-generation ultra-efficient solar cell technology with the most industrialization potential due to a series of advantages of high conversion efficiency, short manufacturing process flow, silicon wafer flaking, low temperature coefficient, no light attenuation, double-sided power generation, high double-sided rate and the like.
The top side and the bottom side of the existing heterojunction solar cell comprise a multi-layer structure, the layers are relatively independent, the layers are not matched with each other, namely, the layers are simply combined together, and the advantages of the layers cannot be fully exerted. In addition, for any single layer, the performances in different aspects are usually mutually restricted, for example, the single layer cannot achieve better electric conduction performance and light transmission performance, and if the function of the single layer is exerted to the maximum, the electric performance or efficiency of the whole solar cell can be influenced, namely, the function of the single film layer and the efficiency of the whole solar cell cannot be considered.
It is therefore desirable to provide a heterojunction solar cell, a shingle assembly, and a method of fabricating a heterojunction solar cell that at least partially address the above-described problems.
Disclosure of Invention
The invention aims to provide a heterojunction solar cell, a shingle assembly and a manufacturing method of the heterojunction solar cell, wherein the top side and the bottom side of a substrate layer of the heterojunction solar cell respectively comprise four layers of structures, the four layers of structures are different in components, and the advantages of the intrinsic amorphous silicon thin film layers can be exerted to a greater extent when combined together, and the overall electrical property or efficiency of the solar cell can be improved.
In the four-layer structure, the first intrinsic amorphous silicon thin film layer has the components that the amorphous silicon thin film layer cannot become long-range ordered and grow into epitaxial silicon, the light absorption performance of the first intrinsic amorphous silicon thin film layer is poor, so that the short-circuit current of a battery piece can be improved, the second intrinsic amorphous silicon thin film layer can improve the passivation effect and ensure the open-circuit voltage of the solar battery piece, the third intrinsic amorphous silicon thin film layer can provide hydrogen passivation and has smaller thickness, the contact resistance of the thin film layer is reduced, the filling factor is improved, the absorption of light of the thin film layer is reduced, the short-circuit current is improved, the fourth intrinsic amorphous silicon thin film layer can be compact, so that the doping atom diffusion is effectively prevented, and in addition, the structure can also have higher transmittance, so that the short-circuit current is improved.
In addition, in the invention, the doped layers on the top side and the bottom side of the intrinsic amorphous silicon thin film layer can have a two-layer structure, namely an amorphous silicon layer with lower doping concentration and a microcrystalline silicon layer with higher doping concentration, so that impurity atoms which are outwards diffused by the amorphous silicon layer are relatively less, the microcrystalline silicon layer can form good contact with the light-transmitting conductive layer, the contact resistance is reduced, the filling factor is improved, and the transmittance of the microcrystalline silicon layer is higher, the absorption of light by the film layer can be reduced, thereby improving the short-circuit current.
According to a first aspect of the present invention, there is provided a heterojunction solar cell including a base sheet, electrodes provided on top and bottom surfaces of the base sheet, the base sheet including:
A monocrystalline silicon substrate layer;
the two sets of intrinsic amorphous silicon thin film layers comprise a first set of intrinsic amorphous silicon thin film layers arranged on the top side of the monocrystalline silicon substrate layer and a second set of intrinsic amorphous silicon thin film layers arranged on the bottom side of the monocrystalline silicon substrate layer, and each of the first set of intrinsic amorphous silicon thin film layers and the second set of intrinsic amorphous silicon thin film layers comprises the following four layers of structures which are sequentially arranged in the direction from the monocrystalline silicon substrate layer to the electrode:
a first layer of intrinsic amorphous silicon thin film, the first intrinsic amorphous silicon film layer is of the same carbon
An overall layered structure of group doped silicon;
A second intrinsic amorphous silicon thin film layer made of silicon
A monolithic layered structure deposited in a source atmosphere;
A third intrinsic amorphous silicon thin film layer formed of a material containing
Deposition of a mixed gas of a silicon source atmosphere and at least one of a hydrogen atmosphere and a deuterium-containing atmosphere
An integral layered structure is formed;
a fourth intrinsic amorphous silicon thin film layer formed by a process comprising
Mixture of at least one of hydrogen atmosphere and deuterium-containing atmosphere, silicon source atmosphere, and carbon source atmosphere
Bulk deposited monolithic layered structures;
The N-type doped layer is positioned on the top side of the first group of intrinsic amorphous silicon thin film layers;
The P-type doped layer is positioned at the bottom side of the second group of intrinsic amorphous silicon thin film layers;
And the light-transmitting conductive layer is respectively arranged on the top side of the N-type doped layer and the bottom side of the P-type doped layer, and the electrode is arranged on the surface of the light-transmitting conductive layer.
In one embodiment, the first intrinsic amorphous silicon thin film layer is an overall layered structure deposited from a mixed gas of silane doped with at least one of alkane, alkene, alkyne.
In one embodiment, the third intrinsic amorphous silicon thin film layer is a monolithic layered structure deposited from a mixed gas in which the ratio of the amounts of hydrogen gas and silane gas is in the range of 3 to 15.
In one embodiment, the fourth intrinsic amorphous silicon thin film layer is an overall layered structure deposited from a mixed gas having a ratio of alkane to hydrogen in the range of 1/20 to 3/5.
In one embodiment, the N-type doped layer and the P-type doped layer each comprise a first doped layer in contact with the fourth intrinsic amorphous silicon thin film layer and a second doped layer in contact with the transparent conductive layer, the first doped layer is of an amorphous silicon integral layered structure, the second doped layer is of a microcrystalline silicon integral layered structure, and the doping concentration of the second doped layer is greater than that of the first doped layer.
In one embodiment, the first doped layer of the N-type doped layer is an overall layered structure formed by depositing a mixed gas of silane and phosphane and at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere;
the second doped layer of the N-type doped layer is of an integral layered structure formed by depositing mixed gas of at least one of hydrogen-containing atmosphere and deuterium-containing atmosphere, and silane, phosphane and carbon dioxide.
In one embodiment, the first doped layer of the P-type doped layer is an overall layered structure deposited by a mixed gas of silane and trimethylboron and at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere;
The second doped layer of the P-doped layer is an integral layered structure formed by depositing mixed gas of at least one of hydrogen-containing atmosphere and deuterium-containing atmosphere, and silane, borane and carbon dioxide.
In one embodiment, the first doped layer of the N-doped layer has a phosphorus doping level of 14ppm to 17ppm.
In one embodiment, the crystallinity of the second doped layer of the N-doped layer is 40% -65%, and the doping amount of phosphorus of the second doped layer of the N-doped layer is 18ppm-22ppm.
In one embodiment, the first doped layer of the P-doped layer has a boron doping level of 14ppm to 17ppm.
In one embodiment, the crystallinity of the second doped layer of the P-type doped layer is 40% -65%, and the doping amount of boron of the second doped layer of the P-type doped layer is 18ppm-22ppm.
In one embodiment, the substrate layer is an N-type monocrystalline silicon substrate layer.
According to a second aspect of the invention, there is provided a shingle assembly, characterised in that the shingle assembly is formed by connecting heterojunction solar cells according to any of the above aspects in a shingled manner.
According to a third aspect of the present invention, there is provided a heterojunction solar cell including a base sheet, electrodes provided on top and bottom surfaces of the base sheet, the base sheet including:
The two sets of intrinsic amorphous silicon thin film layers comprise a first set of intrinsic amorphous silicon thin film layers arranged on the top side of the monocrystalline silicon substrate layer and a second set of intrinsic amorphous silicon thin film layers arranged on the bottom side of the monocrystalline silicon substrate layer, and each of the first set of intrinsic amorphous silicon thin film layers and the second set of intrinsic amorphous silicon thin film layers comprises a four-layer structure;
The N-type doped layer is positioned on the top side of the first group of intrinsic amorphous silicon thin film layers;
The P-type doped layer is positioned at the bottom side of the second group of intrinsic amorphous silicon thin film layers;
The transparent conductive layer is respectively arranged on the top side of the N-type doped layer and the bottom side of the P-type doped layer, the electrode is arranged on the surface of the transparent conductive layer,
And the N-type doped layer and the P-type doped layer respectively comprise a first doped layer contacted with the intrinsic amorphous silicon thin film layer and a second doped layer contacted with the light-transmitting conductive layer, the first doped layer is of an amorphous silicon integral layered structure, the second doped layer is of a microcrystalline silicon integral layered structure, and the doping concentration of the second doped layer is greater than that of the first doped layer.
In one embodiment, the first doped layer of the N-type doped layer is an overall layered structure formed by depositing a mixed gas of silane and phosphane and at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere;
the second doped layer of the N-type doped layer is of an integral layered structure formed by depositing mixed gas of at least one of hydrogen-containing atmosphere and deuterium-containing atmosphere, and silane, phosphane and carbon dioxide.
In one embodiment, the first doped layer of the P-type doped layer is an overall layered structure deposited by a mixed gas of silane and trimethylboron and at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere;
The second doped layer of the P-doped layer is an integral layered structure formed by depositing mixed gas of at least one of hydrogen-containing atmosphere and deuterium-containing atmosphere, and silane, borane and carbon dioxide.
In one embodiment, the first doped layer of the N-doped layer has a phosphorus doping level of 14ppm to 17ppm.
In one embodiment, the crystallinity of the second doped layer of the N-doped layer is 40% -65%, and the doping amount of phosphorus of the second doped layer of the N-doped layer is 18ppm-22ppm.
In one embodiment, the first doped layer of the P-doped layer has a boron doping level of 14ppm to 17ppm.
In one embodiment, the crystallinity of the second doped layer of the P-type doped layer is 40% -65%, and the doping amount of boron of the second doped layer of the P-type doped layer is 18ppm-22ppm.
According to a fourth aspect of the invention, there is provided a shingle assembly formed from heterojunction solar cells according to any of the above aspects connected in a shingled manner.
According to a fifth aspect of the present invention, there is provided a method of manufacturing a heterojunction solar cell, the method comprising the steps of manufacturing a heterojunction solar cell whole and breaking the heterojunction solar cell whole, wherein the step of manufacturing the heterojunction solar cell whole further comprises the steps of:
Setting a monocrystalline silicon substrate layer;
a first group of intrinsic amorphous silicon thin film layers are arranged on the top side of the monocrystalline silicon substrate layer, and a second group of intrinsic amorphous silicon thin film layers are arranged on the bottom side of the monocrystalline silicon substrate layer;
An N-type doping layer is arranged on the top side of the first group of intrinsic amorphous silicon thin film layers, and a P-type doping layer is arranged on the bottom side of the second group of intrinsic amorphous silicon thin film layers;
a light-transmitting conductive layer is arranged on the top side of the N-type doped layer and the bottom side of the P-type doped layer;
an electrode is applied on the exposed surface of the light-transmitting conductive layer,
Wherein the steps of providing the first set of intrinsic amorphous silicon thin film layers and the second set of intrinsic amorphous silicon thin film layers each comprise the steps of:
Depositing a first intrinsic amorphous silicon thin film layer on the top surface or the bottom surface of the monocrystalline silicon substrate layer by using mixed gas of carbon-family doped silicon;
forming a second intrinsic amorphous silicon thin film layer on the exposed surface of the first intrinsic amorphous silicon thin film layer by deposition with a silicon source atmosphere;
Forming a third intrinsic amorphous silicon thin film layer on the exposed surface of the second intrinsic amorphous silicon thin film layer by deposition of a mixed gas of a silicon source atmosphere and at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere;
and depositing a fourth intrinsic amorphous silicon thin film layer on the exposed surface of the third intrinsic amorphous silicon thin film layer by using a mixed gas of a silicon source atmosphere and a carbon source atmosphere and at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere.
In one embodiment, the step of providing the first intrinsic amorphous silicon thin film layer includes forming the first intrinsic amorphous silicon thin film layer using a mixed gas deposition of at least one of silane doped alkane, alkene, alkyne.
In one embodiment, the step of disposing the third intrinsic amorphous silicon thin film layer includes forming the third intrinsic amorphous silicon thin film layer using mixed gas deposition in which the ratio of the amounts of hydrogen gas and silane gas is in the range of 3 to 15.
In one embodiment, the step of providing the fourth intrinsic amorphous silicon thin film layer includes forming the fourth intrinsic amorphous silicon thin film layer using mixed gas deposition in which the ratio of the amount of alkane to the amount of hydrogen is in the range of 1/20 to 3/5.
In one embodiment, the step of providing an N-type doped layer and the step of providing a P-type doped layer each comprise the steps of:
generating a first doped layer of amorphous silicon material on the fourth intrinsic amorphous silicon thin film layer by using mixed gas with a first doping concentration;
And forming a second doped layer of microcrystalline silicon material on the first doped layer by using a mixed gas with a second doping concentration which is larger than the first doping concentration.
In one embodiment, the step of providing an N-doped layer includes the steps of:
forming a first doped layer by using mixed gas deposition of at least one of hydrogen-containing atmosphere and deuterium-containing atmosphere and silane and phosphane;
a second doped layer is formed using a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and a mixture of silane, phosphane, and carbon dioxide.
In one embodiment, the step of providing a P-type doped layer includes the steps of:
forming a first doped layer by using mixed gas deposition of at least one of hydrogen-containing atmosphere and deuterium-containing atmosphere and silane and trimethylboron;
a second doped layer is formed using a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and a mixture of silane, borane, and carbon dioxide.
In one embodiment, the step of fabricating the first doped layer of the N-type doped layer includes controlling the ratio of the components in the mixed gas so that the doping amount of phosphorus of the first doped layer of the N-type doped layer is 14ppm to 17ppm.
In one embodiment, the step of fabricating the second doped layer of the N-type doped layer includes controlling the ratio of the components in the mixed gas so that the crystallinity of the second doped layer of the formed N-type doped layer is 40 to 65% and the doping amount of phosphorus is 18ppm to 22ppm.
In one embodiment, the step of fabricating the first doped layer of the P-type doped layer includes controlling the ratio of the components in the mixed gas so that the doping amount of boron of the first doped layer of the formed P-type doped layer is 14ppm to 17ppm.
In one embodiment, the step of fabricating the second doped layer of the P-type doped layer includes controlling the ratio of the components in the mixed gas so that the crystallinity of the second doped layer of the formed P-type doped layer is 40-65% and the doping amount of boron is 18-22 ppm.
In one embodiment, the monocrystalline silicon substrate layer is provided as an N-type monocrystalline silicon substrate layer.
According to a sixth aspect of the present invention, there is provided a method of manufacturing a heterojunction solar cell, the method comprising the steps of manufacturing a heterojunction solar cell whole and breaking the heterojunction solar cell whole, wherein the step of manufacturing the heterojunction solar cell whole further comprises the steps of:
Setting a monocrystalline silicon substrate layer;
a first group of intrinsic amorphous silicon thin film layers are arranged on the top side of the monocrystalline silicon substrate layer, a second group of intrinsic amorphous silicon thin film layers are arranged on the bottom side of the monocrystalline silicon substrate layer, and each of the first group of intrinsic amorphous silicon thin film layers and the second group of intrinsic amorphous silicon thin film layers comprises a four-layer structure;
An N-type doping layer is arranged on the top side of the first group of intrinsic amorphous silicon thin film layers, and a P-type doping layer is arranged on the bottom side of the second group of intrinsic amorphous silicon thin film layers;
a light-transmitting conductive layer is arranged on the top side of the N-type doped layer and the bottom side of the P-type doped layer;
an electrode is applied on the exposed surface of the light-transmitting conductive layer,
Wherein, the step of setting the N-type doped layer and the step of setting the P-type doped layer both comprise the following steps:
generating a first doped layer of amorphous silicon material on the fourth intrinsic amorphous silicon thin film layer by using mixed gas with a first doping concentration;
And forming a second doped layer of microcrystalline silicon material on the first doped layer by using a mixed gas with a second doping concentration which is larger than the first doping concentration.
In one embodiment, the step of providing an N-doped layer includes the steps of:
forming a first doped layer by using mixed gas deposition of at least one of hydrogen-containing atmosphere and deuterium-containing atmosphere and silane and phosphane;
a second doped layer is formed using a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and a mixture of silane, phosphane, and carbon dioxide.
In one embodiment, the step of providing a P-type doped layer includes the steps of:
forming a first doped layer by using mixed gas deposition of at least one of hydrogen-containing atmosphere and deuterium-containing atmosphere and silane and trimethylboron;
a second doped layer is formed using a mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere and a mixture of silane, borane, and carbon dioxide.
In one embodiment, the step of fabricating the first doped layer of the N-type doped layer includes controlling the ratio of the components in the mixed gas so that the doping amount of phosphorus of the first doped layer of the N-type doped layer is 14ppm to 17ppm.
In one embodiment, the step of fabricating the second doped layer of the N-type doped layer includes controlling the ratio of the components in the mixed gas so that the crystallinity of the second doped layer of the formed N-type doped layer is 40 to 65% and the doping amount of phosphorus is 18ppm to 22ppm.
In one embodiment, the step of fabricating the first doped layer of the P-type doped layer includes controlling the ratio of the components in the mixed gas so that the doping amount of boron of the first doped layer of the formed P-type doped layer is 14ppm to 17ppm.
In one embodiment, the step of fabricating the second doped layer of the P-type doped layer includes controlling the ratio of the components in the mixed gas so that the crystallinity of the second doped layer of the formed P-type doped layer is 40-65% and the doping amount of boron is 18-22 ppm.
According to the heterojunction solar cell, the intrinsic amorphous silicon thin film layer structures on the top side and the bottom side of the substrate layer respectively comprise four layers, the components of the four layers are different, the advantages of the intrinsic amorphous silicon thin film layer can be exerted to a greater extent by combining the four layers together, and the overall electrical performance or efficiency of the solar cell can be improved.
In the four-layer structure, the first intrinsic amorphous silicon thin film layer has the components that the amorphous silicon thin film layer cannot become long-range ordered and grow into epitaxial silicon, the light absorption performance of the first intrinsic amorphous silicon thin film layer is poor, so that the short-circuit current of a battery piece can be improved, the second intrinsic amorphous silicon thin film layer can improve the passivation effect and ensure the open-circuit voltage of the solar battery piece, the third intrinsic amorphous silicon thin film layer can provide hydrogen passivation and has smaller thickness, the contact resistance of the thin film layer is reduced, the filling factor is improved, the absorption of light of the thin film layer is reduced, the short-circuit current is improved, the fourth intrinsic amorphous silicon thin film layer can be compact, so that the doping atom diffusion is effectively prevented, and in addition, the structure can also have higher transmittance, so that the short-circuit current is improved.
In addition, in the invention, the doped layers on the top side and the bottom side of the intrinsic amorphous silicon thin film layer can have a two-layer structure, namely an amorphous silicon layer with lower doping concentration and a microcrystalline silicon layer with higher doping concentration, so that impurity atoms which are outwards diffused by the amorphous silicon layer are relatively less, the microcrystalline silicon layer can form good contact with the light-transmitting conductive layer, the contact resistance is reduced, the filling factor is improved, and the transmittance of the microcrystalline silicon layer is higher, the absorption of light by the film layer can be reduced, thereby improving the short-circuit current.
Drawings
For a better understanding of the above and other objects, features, advantages and functions of the present invention, reference should be made to the preferred embodiments illustrated in the accompanying drawings. Like reference numerals refer to like parts throughout the drawings. It will be appreciated by persons skilled in the art that the drawings are intended to schematically illustrate preferred embodiments of the invention, and that the scope of the invention is not limited in any way by the drawings, and that the various components are not drawn to scale.
Fig. 1 is a schematic diagram of a heterojunction solar cell according to a preferred embodiment of the invention;
fig. 2 is a schematic view of a heterojunction solar cell according to another preferred embodiment of the invention.
Detailed Description
Specific embodiments of the present invention will now be described in detail with reference to the accompanying drawings. What has been described herein is merely a preferred embodiment according to the present invention, and other ways of implementing the invention will occur to those skilled in the art on the basis of the preferred embodiment, and are within the scope of the invention.
The invention provides a heterojunction solar cell, a shingle assembly and a method for manufacturing the heterojunction solar cell. Fig. 1 and 2 show schematic diagrams of heterojunction solar cells according to two preferred embodiments of the invention.
First embodiment
Referring to fig. 1, in a first embodiment, the heterojunction solar cell sheet includes a base sheet with a positive electrode printed on a top surface and a back electrode printed on a bottom surface, the positive electrode and the back electrode preferably being made of silver. The substrate sheet further comprises a plurality of cell layers which are stacked with each other along a direction perpendicular to the substrate sheet, wherein the plurality of cell layers comprise a monocrystalline silicon substrate layer, a first group of intrinsic amorphous silicon thin film layers, a second layer of intrinsic amorphous silicon thin film layers, a doped layer and a light-transmitting conductive layer. The monocrystalline silicon substrate layer may be, for example, an N-type monocrystalline silicon substrate layer.
The first group of intrinsic amorphous silicon thin film layers are arranged on the top side of the monocrystalline silicon substrate layer, the second group of intrinsic amorphous silicon thin film layers are arranged on the bottom side of the monocrystalline silicon substrate layer, and each of the first group of intrinsic amorphous silicon thin film layers and the second group of intrinsic amorphous silicon thin film layers comprises a first intrinsic amorphous silicon thin film layer, a second intrinsic amorphous silicon thin film layer, a third intrinsic amorphous silicon thin film layer and a fourth intrinsic amorphous silicon thin film layer which are sequentially arranged in the direction from the monocrystalline silicon substrate layer to the electrode.
The first intrinsic amorphous silicon thin film layer is of an integral layered structure of carbon-family doped silicon, the second intrinsic amorphous silicon thin film layer is of an integral layered structure formed by depositing a silicon source atmosphere, the third intrinsic amorphous silicon thin film layer is of an integral layered structure formed by depositing a mixed gas of a silicon source atmosphere and at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, and the fourth intrinsic amorphous silicon thin film layer is of an integral layered structure formed by depositing a mixed gas of a silicon source atmosphere and a carbon source atmosphere and at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere.
Preferably, the first intrinsic amorphous silicon thin film layer is an overall layered structure formed by depositing a mixed gas of silane doped alkane, alkene or alkyne, the third intrinsic amorphous silicon thin film layer is an overall layered structure formed by depositing a mixed gas of hydrogen and silane gas in an amount ratio of 3-15, and the fourth intrinsic amorphous silicon thin film layer is an overall layered structure formed by depositing a mixed gas of alkane and hydrogen in an amount ratio of 1/20-3/5.
The four intrinsic amorphous silicon thin film layers have different components, so that the advantages of the intrinsic amorphous silicon thin film layers can be brought into play to a greater extent by combining the four intrinsic amorphous silicon thin film layers together, and the overall electrical performance or efficiency of the solar cell can be improved.
Specifically, the components of the first intrinsic amorphous silicon film layer enable the amorphous silicon film layer not to become long-range ordered and not to grow into epitaxial silicon, the light absorption performance of the first intrinsic amorphous silicon film layer is poor, so that the short-circuit current of a battery piece can be improved, the passivation effect of the second intrinsic amorphous silicon film layer can be improved, the open-circuit voltage of the solar battery piece is guaranteed, the third intrinsic amorphous silicon film layer can be provided with smaller thickness while hydrogen passivation is provided, the contact resistance of the film layer is reduced, the filling factor is improved, the absorption of light of the film layer is reduced, the short-circuit current is improved, the fourth intrinsic amorphous silicon film layer can be compact, so that the diffusion of doping atoms is effectively prevented, and in addition, the structure of the fourth intrinsic amorphous silicon film layer can be provided with higher transmittance, so that the short-circuit current is improved.
With continued reference to fig. 1, the doped layers located on the top side of the first set of intrinsic amorphous silicon thin film layers are phosphorus doped N-type doped layers, and the doped layers located on the bottom side of the second set of intrinsic amorphous silicon thin film layers are boron doped P-type doped layers. The N-type doped layer and the P-type doped layer may have a single-layer structure or at least two-layer structure.
The present embodiment also provides a shingle assembly, which is formed by arranging a plurality of heterojunction solar cells in fig. 1 in a shingled manner.
The embodiment also provides a method for manufacturing the heterojunction solar cell shown in fig. 1. The method comprises the steps of manufacturing the heterojunction solar cell whole piece and splitting the heterojunction solar cell whole piece. The manufacturing method of the heterojunction solar cell slice comprises the steps of arranging a monocrystalline silicon substrate layer, arranging a first group of intrinsic amorphous silicon thin film layers on the top side of the monocrystalline silicon substrate layer, arranging a second group of intrinsic amorphous silicon thin film layers on the bottom side of the monocrystalline silicon substrate layer, arranging an N-type doped layer on the top side of the first group of intrinsic amorphous silicon thin film layers, arranging a P-type doped layer on the bottom side of the second group of intrinsic amorphous silicon thin film layers, arranging a light-transmitting conductive layer on the top side of the N-type doped layer and the bottom side of the P-type doped layer, and applying electrodes on the exposed surfaces of the light-transmitting conductive layer.
The step of disposing the first group of intrinsic amorphous silicon thin film layers and the second group of intrinsic amorphous silicon thin film layers each includes the steps of forming a first intrinsic amorphous silicon thin film layer by deposition of a mixed gas of carbon-family doped silicon on either the top surface or the bottom surface of the single crystal silicon substrate layer, forming a second intrinsic amorphous silicon thin film layer by deposition of a silicon source atmosphere on the exposed surface of the first intrinsic amorphous silicon thin film layer, forming a third intrinsic amorphous silicon thin film layer by deposition of a mixed gas of a silicon source atmosphere and at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere on the exposed surface of the second intrinsic amorphous silicon thin film layer, and forming a fourth intrinsic amorphous silicon thin film layer by deposition of a mixed gas of a silicon source atmosphere and a carbon source atmosphere on the exposed surface of the third intrinsic amorphous silicon thin film layer.
Preferably, the step of providing the first intrinsic amorphous silicon thin film layer includes forming the first intrinsic amorphous silicon thin film layer using mixed gas deposition of at least one of silane doped alkane, alkene, alkyne. The step of disposing the third intrinsic amorphous silicon thin film layer includes forming the third intrinsic amorphous silicon thin film layer by deposition using a mixed gas in which the ratio of the amounts of hydrogen gas and silane gas is in the range of 3 to 15. The step of disposing the fourth intrinsic amorphous silicon thin film layer includes forming the fourth intrinsic amorphous silicon thin film layer using mixed gas deposition in which the ratio of the amount of alkane to the amount of hydrogen is in the range of 1/20 to 3/5.
In addition, the step of arranging the N-type doped layer and the step of arranging the P-type doped layer comprise the steps of generating a first doped layer of amorphous silicon material by using a mixed gas with a first doping concentration on the fourth intrinsic amorphous silicon thin film layer, and generating a second doped layer of microcrystalline silicon material by using a mixed gas with a second doping concentration which is larger than the first doping concentration on the first doped layer.
Preferably, the step of providing the N-type doped layer includes the steps of forming a first doped layer by using a mixed gas of silane and phosphine mixed with at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, and forming a second doped layer by using a mixed gas of silane, phosphine and carbon dioxide mixed with at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere.
More preferably, the step of manufacturing the first doped layer of the N-type doped layer includes controlling the ratio of the components in the mixed gas so that the doping amount of phosphorus of the first doped layer of the formed N-type doped layer is 14ppm to 17ppm. The step of manufacturing the second doped layer of the N-type doped layer includes controlling the ratio of the components in the mixed gas so that the crystallinity of the second doped layer of the formed N-type doped layer is 40% -65% and the doping amount of phosphorus is 18ppm-22ppm.
It is also preferable that the step of disposing the P-type doped layer includes the steps of forming a first doped layer by deposition using a mixed gas of silane and trimethylboron mixed with at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, and forming a second doped layer by deposition using a mixed gas of silane, borane, and carbon dioxide mixed with at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere.
More preferably, the step of manufacturing the first doped layer of the P-type doped layer includes controlling the ratio of the components in the mixed gas so that the doping amount of boron of the first doped layer of the formed P-type doped layer is 14ppm to 17ppm. The step of manufacturing the second doped layer of the P-type doped layer includes controlling the ratio of the components in the mixed gas so that the crystallinity of the second doped layer of the formed P-type doped layer is 40 to 65% and the doping amount of boron is 18ppm to 22ppm.
Second embodiment
Fig. 2 shows a heterojunction solar cell according to a second preferred embodiment of the invention. The heterojunction solar cell in this embodiment comprises a base sheet with a positive electrode printed on the top surface and a back electrode printed on the bottom surface, the positive and back electrodes preferably being made of silver. The substrate sheet further comprises a plurality of cell layers which are stacked with each other along a direction perpendicular to the substrate sheet, wherein the plurality of cell layers comprise a monocrystalline silicon substrate layer, a first group of intrinsic amorphous silicon thin film layers, a second layer of intrinsic amorphous silicon thin film layers, a doped layer and a light-transmitting conductive layer.
The first group of intrinsic amorphous silicon thin film layers and the second group of intrinsic amorphous silicon thin film layers each comprise four layers, and the four layers may be as described in the previous embodiment or may be other structures different from the previous embodiment.
In the embodiment shown in fig. 2, the N-type doped layer and the P-type doped layer each comprise a two-layer structure, namely a first doped layer in contact with the fourth intrinsic amorphous silicon thin film layer and a second doped layer in contact with the light-transmitting conductive layer, wherein the first doped layer is an amorphous silicon layer with lower doping concentration, and the second doped layer is a microcrystalline silicon layer with higher doping concentration.
The first doped layer of the N-type doped layer is of an integral layered structure formed by depositing mixed gas of silane and phosphane and at least one of hydrogen-containing atmosphere and deuterium-containing atmosphere, and the second doped layer of the N-type doped layer is of an integral layered structure formed by depositing mixed gas of silane, phosphane and carbon dioxide and at least one of hydrogen-containing atmosphere and deuterium-containing atmosphere.
Preferably, the doping amount of the phosphorus of the first doped layer of the N-type doped layer is 14ppm to 17ppm, the crystallinity of the second doped layer of the N-type doped layer is 40% to 65%, and the doping amount of the phosphorus of the second doped layer of the N-type doped layer is 18ppm to 22ppm.
The first doped layer of the P-type doped layer is of an integral layered structure formed by depositing mixed gas of silane and trimethylboron and at least one of hydrogen-containing atmosphere and deuterium-containing atmosphere, and the second doped layer of the P-type doped layer is of an integral layered structure formed by depositing mixed gas of silane, borane and carbon dioxide and at least one of hydrogen-containing atmosphere and deuterium-containing atmosphere.
Preferably, the doping amount of boron of the first doped layer of the P-type doped layer is 14ppm to 17ppm, the crystallinity of the second doped layer of the P-type doped layer is 40% to 65%, and the doping amount of boron of the second doped layer of the P-type doped layer is 18ppm to 22ppm.
The doped layers on the top side and the bottom side of the intrinsic amorphous silicon thin film layer are respectively provided with a two-layer structure, namely an amorphous silicon layer with lower doping concentration and a microcrystalline silicon layer with higher doping concentration, so that impurity atoms which are outwards diffused by the amorphous silicon layer are relatively less, the microcrystalline silicon layer can form good contact with the light-transmitting conductive layer, the contact resistance is reduced, the filling factor is improved, and the absorption of light by the film layer can be reduced due to higher transmittance of the microcrystalline silicon layer, so that the short-circuit current is improved.
The present embodiment also provides a shingle assembly that may be formed from the heterojunction solar cells shown in fig. 2 arranged in a shingled manner.
The present embodiment also provides a method of manufacturing the heterojunction solar cell as shown in fig. 2. The method comprises the steps of manufacturing a heterojunction solar cell whole sheet and splitting the heterojunction solar cell whole sheet, wherein the step of manufacturing the heterojunction solar cell whole sheet comprises the steps of arranging a monocrystalline silicon substrate layer, arranging a first group of intrinsic amorphous silicon thin film layers on the top side of the monocrystalline silicon substrate layer, arranging a second group of intrinsic amorphous silicon thin film layers on the bottom side of the monocrystalline silicon substrate layer, wherein each of the first group of intrinsic amorphous silicon thin film layers and the second group of intrinsic amorphous silicon thin film layers comprises a four-layer structure, arranging an N-type doped layer on the top side of the first group of intrinsic amorphous silicon thin film layers, arranging a P-type doped layer on the bottom side of the second group of intrinsic amorphous silicon thin film layers, arranging a light-transmitting conductive layer on the top side of the N-type doped layer and the bottom side of the P-type doped layer, and applying electrodes on the exposed surfaces of the light-transmitting conductive layer.
The step of arranging the N-type doped layer and the step of arranging the P-type doped layer comprise the steps of generating a first doped layer of amorphous silicon material by using mixed gas with a first doping concentration on the fourth intrinsic amorphous silicon thin film layer, and generating a second doped layer of microcrystalline silicon material by using mixed gas with a second doping concentration which is larger than the first doping concentration on the first doped layer.
Preferably, the step of providing the N-type doped layer includes the steps of forming a first doped layer by using a mixed gas of silane and phosphine mixed with at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, and forming a second doped layer by using a mixed gas of silane, phosphine and carbon dioxide mixed with at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere.
More preferably, the step of manufacturing the first doped layer of the N-type doped layer includes controlling the ratio of the components in the mixed gas so that the doping amount of phosphorus of the first doped layer of the formed N-type doped layer is 14ppm to 17ppm. The step of manufacturing the second doped layer of the N-type doped layer includes controlling the ratio of the components in the mixed gas so that the crystallinity of the second doped layer of the formed N-type doped layer is 40% -65% and the doping amount of phosphorus is 18ppm-22ppm.
It is also preferable that the step of disposing the P-type doped layer includes the steps of forming a first doped layer by deposition using a mixed gas of silane and trimethylboron mixed with at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, and forming a second doped layer by deposition using a mixed gas of silane, borane, and carbon dioxide mixed with at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere.
More preferably, the step of manufacturing the first doped layer of the P-type doped layer includes controlling the ratio of the components in the mixed gas so that the doping amount of boron of the first doped layer of the formed P-type doped layer is 14ppm to 17ppm. The step of manufacturing the second doped layer of the P-type doped layer includes controlling the ratio of the components in the mixed gas so that the crystallinity of the second doped layer of the formed P-type doped layer is 40 to 65% and the doping amount of boron is 18ppm to 22ppm.
In the heterojunction solar cell, the top side and the bottom side of the substrate layer respectively comprise four layers of structures, the components of the four layers of structures are different, the advantages of the intrinsic amorphous silicon thin film layers can be exerted to a greater extent by combining the four layers of structures together, and the overall electrical performance or efficiency of the solar cell can be improved.
In the four-layer structure, the first intrinsic amorphous silicon thin film layer has the components that the amorphous silicon thin film layer cannot become long-range ordered and grow into epitaxial silicon, the light absorption performance of the first intrinsic amorphous silicon thin film layer is poor, so that the short-circuit current of a battery piece can be improved, the second intrinsic amorphous silicon thin film layer can improve the passivation effect and ensure the open-circuit voltage of the solar battery piece, the third intrinsic amorphous silicon thin film layer can provide hydrogen passivation and has smaller thickness, the contact resistance of the thin film layer is reduced, the filling factor is improved, the absorption of light of the thin film layer is reduced, the short-circuit current is improved, the fourth intrinsic amorphous silicon thin film layer can be compact, so that the doping atom diffusion is effectively prevented, and in addition, the structure can also have higher transmittance, so that the short-circuit current is improved.
In addition, in the invention, the doped layers on the top side and the bottom side of the intrinsic amorphous silicon thin film layer can have a two-layer structure, namely an amorphous silicon layer with lower doping concentration and a microcrystalline silicon layer with higher doping concentration, so that impurity atoms which are outwards diffused by the amorphous silicon layer are relatively less, the microcrystalline silicon layer can form good contact with the light-transmitting conductive layer, the contact resistance is reduced, the filling factor is improved, and the transmittance of the microcrystalline silicon layer is higher, the absorption of light by the film layer can be reduced, thereby improving the short-circuit current.
The foregoing description of various embodiments of the invention has been presented for the purpose of illustration to one of ordinary skill in the relevant art. It is not intended that the invention be limited to the exact embodiment disclosed or as illustrated. As above, many alternatives and modifications of the present invention will be apparent to those of ordinary skill in the art in light of the above teachings. Thus, while some alternative embodiments have been specifically described, those of ordinary skill in the art will understand or relatively easily develop other embodiments. The present invention is intended to embrace all alternatives, modifications and variations of the present invention described herein and other embodiments that fall within the spirit and scope of the invention described above.

Claims (40)

1. The heterojunction solar cell comprises a substrate sheet and electrodes arranged on the top surface and the bottom surface of the substrate sheet, and is characterized in that the substrate sheet comprises a monocrystalline silicon substrate layer; the two sets of intrinsic amorphous silicon thin film layers comprise a first set of intrinsic amorphous silicon thin film layer arranged on the top side of the monocrystalline silicon substrate layer and a second set of intrinsic amorphous silicon thin film layer arranged on the bottom side of the monocrystalline silicon substrate layer, wherein each of the first set of intrinsic amorphous silicon thin film layer and the second set of intrinsic amorphous silicon thin film layer comprises four layers which are sequentially arranged in the direction from the monocrystalline silicon substrate layer to the electrode, the first layer of intrinsic amorphous silicon thin film layer is of an integral layered structure of carbon-same-group doped silicon, the second layer of intrinsic amorphous silicon thin film layer is of an integral layered structure formed by deposition of a silicon source atmosphere, the third layer of intrinsic amorphous silicon thin film layer is of an integral layered structure formed by deposition of mixed gas of at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, the fourth layer of intrinsic amorphous silicon thin film layer is of a P-type doped layer which is formed by deposition of mixed gas of the hydrogen-containing atmosphere and the silicon source atmosphere, the fourth layer of an intrinsic amorphous silicon thin film layer is of a P-type doped layer which is formed by deposition of the mixed gas of the hydrogen-containing atmosphere and the deuterium-containing atmosphere, the fourth layer of an N-type doped layer is formed by deposition of the P-type layer which is formed on the top side of the amorphous silicon thin film layer which is formed by deposition of the N-type doped silicon thin layer which is formed on the top side of the top layer of the crystalline silicon layer, the top layer is formed by the N-doped layer, the N-doped layer of the N-doped layer. And the electrode is disposed on a surface of the light-transmitting conductive layer.
2. The heterojunction solar cell of claim 1, wherein the first intrinsic amorphous silicon thin film layer is an overall layered structure deposited from a mixed gas of silane doped with at least one of alkane, alkene, alkyne.
3. The heterojunction solar cell of claim 1, wherein the third intrinsic amorphous silicon thin film layer is an overall layered structure deposited from a mixed gas in which the ratio of the amounts of hydrogen gas and silane gas is in the range of 3-15.
4. The heterojunction solar cell of claim 1, wherein the fourth intrinsic amorphous silicon thin film layer is an overall layered structure deposited from a mixed gas in which the ratio of the amount of alkane to the amount of hydrogen is in the range of 1/20-3/5.
5. The heterojunction solar cell of claim 1, wherein the N-type doped layer and the P-type doped layer each comprise a first doped layer in contact with the fourth intrinsic amorphous silicon thin film layer and a second doped layer in contact with the light-transmitting conductive layer, the first doped layer being of an amorphous silicon monolithic layered structure, the second doped layer being of a microcrystalline silicon monolithic layered structure, the second doped layer having a doping concentration greater than that of the first doped layer.
6. The heterojunction solar cell of claim 5, wherein the first doped layer of the N-type doped layer is an overall layered structure formed by depositing a mixed gas of silane and phosphane and at least one of hydrogen-containing atmosphere and deuterium-containing atmosphere, and the second doped layer of the N-type doped layer is an overall layered structure formed by depositing a mixed gas of silane, phosphane and carbon dioxide and at least one of hydrogen-containing atmosphere and deuterium-containing atmosphere.
7. The heterojunction solar cell of claim 5, wherein the first doped layer of the P-type doped layer is an overall layered structure formed by depositing a mixed gas of silane and trimethylboron and at least one of hydrogen-containing atmosphere and deuterium-containing atmosphere, and the second doped layer of the P-type doped layer is an overall layered structure formed by depositing a mixed gas of silane, borane and carbon dioxide and at least one of hydrogen-containing atmosphere and deuterium-containing atmosphere.
8. Heterojunction solar cell according to claim 5 or 6, characterized in that the doping amount of phosphorus of the first doped layer of the N-doped layer is 14ppm-17ppm.
9. The heterojunction solar cell as claimed in claim 5 or 6, wherein the crystallinity of the second doped layer of the N-type doped layer is 40% -65%, and the doping amount of phosphorus of the second doped layer of the N-type doped layer is 18ppm-22ppm.
10. Heterojunction solar cell according to claim 5 or 7, characterized in that the doping amount of boron of the first doped layer of the P-type doped layer is 14ppm-17ppm.
11. Heterojunction solar cell according to claim 5 or 7, characterized in that the crystallinity of the second doped layer of the P-doped layer is 40% -65% and the doping amount of boron of the second doped layer of the P-doped layer is 18ppm-22ppm.
12. The heterojunction solar cell of claim 1, wherein the substrate layer is an N-type monocrystalline silicon substrate layer.
13. A shingle assembly, characterized in that the shingle assembly is formed by connecting heterojunction solar cells according to any of claims 1-12 in a shingled manner.
14. The heterojunction solar cell comprises a substrate sheet and electrodes arranged on the top surface and the bottom surface of the substrate sheet, wherein the substrate sheet comprises two groups of intrinsic amorphous silicon thin film layers, a light-transmitting conductive layer and a light-transmitting conductive layer, the first group of intrinsic amorphous silicon thin film layers are arranged on the top side of a monocrystalline silicon substrate layer, the second group of intrinsic amorphous silicon thin film layers are arranged on the bottom side of the monocrystalline silicon substrate layer, each of the first group of intrinsic amorphous silicon thin film layers and the second group of intrinsic amorphous silicon thin film layers comprises four layers, each of the N-type doped layer is positioned on the top side of the first group of intrinsic amorphous silicon thin film layers, the P-type doped layer is positioned on the bottom side of the second group of intrinsic amorphous silicon thin film layers, the light-transmitting conductive layer is respectively arranged on the top side of the N-type doped layer and the bottom side of the P-type doped layer, each of the N-type doped layer and the P-type doped layer comprises a layered structure, each of the N-type doped layer and the P-type doped layer comprises a first doped layer and a second doped layer with high-concentration, and the first doped layer and the second doped layer has a layered structure;
The first group of intrinsic amorphous silicon thin film layers and the second group of intrinsic amorphous silicon thin film layers respectively comprise four layers of structures which are sequentially arranged from the direction of the monocrystalline silicon substrate layer to the electrode, wherein the first layer of intrinsic amorphous silicon thin film layers is of an integral layered structure of carbon-family doped silicon, the second layer of intrinsic amorphous silicon thin film layers is of an integral layered structure formed by depositing a silicon source atmosphere, the third layer of intrinsic amorphous silicon thin film layers is of an integral layered structure formed by depositing a mixed gas of a silicon source atmosphere and at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, and the fourth layer of intrinsic amorphous silicon thin film layers is of an integral layered structure formed by depositing a mixed gas of a silicon source atmosphere and a carbon source atmosphere and at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere.
15. The heterojunction solar cell of claim 14, wherein the first doped layer of the N-type doped layer is an overall layered structure formed by depositing a mixed gas of silane and phosphane and at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, and the second doped layer of the N-type doped layer is an overall layered structure formed by depositing a mixed gas of silane, phosphane and carbon dioxide and at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere.
16. The heterojunction solar cell of claim 14, wherein the first doped layer of the P-type doped layer is an overall layered structure formed by depositing a mixed gas of silane and trimethylboron and at least one of hydrogen-containing atmosphere and deuterium-containing atmosphere, and the second doped layer of the P-type doped layer is an overall layered structure formed by depositing a mixed gas of silane, borane and carbon dioxide and at least one of hydrogen-containing atmosphere and deuterium-containing atmosphere.
17. Heterojunction solar cell according to claim 14 or 15, characterized in that the doping amount of phosphorus of the first doped layer of the N-doped layer is 14ppm-17ppm.
18. Heterojunction solar cell according to claim 14 or 15, characterized in that the crystallinity of the second doped layer of the N-doped layer is 40% -65% and the doping amount of phosphorus of the second doped layer of the N-doped layer is 18ppm-22ppm.
19. Heterojunction solar cell according to claim 14 or 16, characterized in that the doping amount of boron of the first doped layer of the P-type doped layer is 14ppm-17ppm.
20. Heterojunction solar cell according to claim 14 or 16, characterized in that the crystallinity of the second doped layer of the P-doped layer is 40% -65% and the doping amount of boron of the second doped layer of the P-doped layer is 18ppm-22ppm.
21. A shingle assembly comprising heterojunction solar cells according to any of claims 14 to 20 connected in a shingled manner.
22. The method for manufacturing the heterojunction solar cell is characterized by comprising the steps of manufacturing the whole heterojunction solar cell and splitting the whole heterojunction solar cell, wherein the step of manufacturing the whole heterojunction solar cell comprises the following steps of arranging a monocrystalline silicon substrate layer; the method comprises the steps of providing a first group of intrinsic amorphous silicon thin film layer on the top side of a monocrystalline silicon substrate layer, providing a second group of intrinsic amorphous silicon thin film layer on the bottom side of the monocrystalline silicon substrate layer, providing an N-type doped layer on the top side of the first group of intrinsic amorphous silicon thin film layer, providing a P-type doped layer on the bottom side of the second group of intrinsic amorphous silicon thin film layer, providing a light-transmitting conductive layer on the top side of the N-type doped layer and the bottom side of the P-type doped layer, applying an electrode on the exposed surface of the light-transmitting conductive layer, wherein the steps of providing the first group of intrinsic amorphous silicon thin film layer and the second group of intrinsic amorphous silicon thin film layer each comprise the steps of forming a first layer of intrinsic amorphous silicon thin film layer on the top surface or the bottom surface of the monocrystalline silicon substrate layer by deposition of a mixed gas of carbon-doped silicon, forming a second layer of intrinsic amorphous silicon thin film layer on the exposed surface of the first layer by deposition of an intrinsic amorphous silicon source atmosphere, forming a second layer of intrinsic amorphous silicon thin film layer on the exposed surface of the second layer by deposition of the first layer of intrinsic amorphous silicon thin film layer by deposition of at least one of hydrogen-containing atmosphere and a third layer of mixed gas of deuterium-containing layer on the exposed surface of the second layer of intrinsic amorphous silicon thin film layer by deposition of at least forming a layer of amorphous silicon thin film layer by deposition of a mixed gas of hydrogen-containing a mixed gas of amorphous silicon source atmosphere on the surface of amorphous silicon layer on the exposed surface of amorphous silicon thin film layer.
23. The method of claim 22, wherein disposing the first intrinsic amorphous silicon thin film layer comprises forming the first intrinsic amorphous silicon thin film layer using a mixed gas deposition of at least one of silane doped alkane, alkene, alkyne.
24. The method of claim 22, wherein the disposing the third intrinsic amorphous silicon thin film layer comprises forming the third intrinsic amorphous silicon thin film layer using a mixed gas deposition in which a ratio of an amount of hydrogen gas and an amount of silane gas is in a range of 3 to 15.
25. The method of claim 22, wherein the step of disposing the fourth intrinsic amorphous silicon thin film layer comprises forming the fourth intrinsic amorphous silicon thin film layer using a mixed gas deposition in which a ratio of an amount of alkane to an amount of hydrogen is in a range of 1/20 to 3/5.
26. The method of claim 22 wherein the step of providing an N-doped layer and the step of providing a P-doped layer each comprise the steps of forming a first doped layer of amorphous silicon material using a mixed gas having a first doping concentration over the fourth intrinsic amorphous silicon thin film layer and forming a second doped layer of microcrystalline silicon material using a mixed gas having a second doping concentration greater than the first doping concentration over the first doped layer.
27. The method of claim 26, wherein the step of providing an N-doped layer comprises forming a first doped layer by deposition using a mixed gas of silane and phosphine mixed with at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, and forming a second doped layer by deposition using a mixed gas of silane, phosphine, and carbon dioxide mixed with at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere.
28. The method of claim 27, wherein the step of providing a P-type doped layer comprises the steps of forming a first doped layer using a mixed gas of silane and trimethylboron mixed with at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, and forming a second doped layer using a mixed gas of silane, borane, and carbon dioxide mixed with at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere.
29. The method of claim 27, wherein the step of fabricating the first doped layer of the N-doped layer comprises controlling the ratio of the components in the mixed gas so that the doping amount of phosphorus of the first doped layer of the N-doped layer is 14ppm to 17ppm.
30. The method of claim 27, wherein the step of fabricating the second doped layer of the N-doped layer includes controlling the ratio of the components in the mixed gas so that the crystallinity of the second doped layer of the formed N-doped layer is 40 to 65% and the doping amount of phosphorus is 18ppm to 22ppm.
31. The method of claim 28, wherein the step of fabricating the first doped layer of the P-type doped layer comprises controlling the ratio of the components in the mixed gas so that the doping amount of boron of the first doped layer of the formed P-type doped layer is 14ppm to 17ppm.
32. The method of claim 28, wherein the step of fabricating the second doped layer of the P-type doped layer comprises controlling the ratio of the components in the mixed gas such that the crystallinity of the second doped layer of the formed P-type doped layer is 40-65% and the doping amount of boron is 18-22 ppm.
33. The method of claim 22, wherein the monocrystalline silicon substrate layer is provided as an N-type monocrystalline silicon substrate layer.
34. A method for manufacturing a heterojunction solar cell is characterized by comprising the steps of manufacturing a whole heterojunction solar cell and splitting the whole heterojunction solar cell, wherein the step of manufacturing the whole heterojunction solar cell comprises the steps of arranging a monocrystalline silicon substrate layer, arranging a first group of intrinsic amorphous silicon thin film layers on the top side of the monocrystalline silicon substrate layer, arranging a second group of intrinsic amorphous silicon thin film layers on the bottom side of the monocrystalline silicon substrate layer, wherein each of the first group of intrinsic amorphous silicon thin film layers and the second group of intrinsic amorphous silicon thin film layers comprises a four-layer structure, arranging an N-type doped layer on the top side of the first group of intrinsic amorphous silicon thin film layers, arranging a P-type doped layer on the bottom side of the second group of intrinsic amorphous silicon thin film layers, arranging a light-transmitting conductive layer on the top side of the N-type doped layer and the bottom side of the P-type doped layer, and applying an electrode on the exposed surface of the light-transmitting conductive layer, wherein the steps of arranging the N-type doped layer and the P-type doped layer comprise the steps of forming a first doped layer with a first mixed gas with a second doped layer with a high concentration of amorphous silicon material on the first doped layer;
The step of disposing the first group of intrinsic amorphous silicon thin film layers and the second group of intrinsic amorphous silicon thin film layers each includes the steps of forming a first intrinsic amorphous silicon thin film layer by deposition of a mixed gas of carbon-family doped silicon on either the top surface or the bottom surface of the single crystal silicon substrate layer, forming a second intrinsic amorphous silicon thin film layer by deposition of a silicon source atmosphere on the exposed surface of the first intrinsic amorphous silicon thin film layer, forming a third intrinsic amorphous silicon thin film layer by deposition of a mixed gas of a silicon source atmosphere and at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere on the exposed surface of the second intrinsic amorphous silicon thin film layer, and forming a fourth intrinsic amorphous silicon thin film layer by deposition of a mixed gas of a silicon source atmosphere and a carbon source atmosphere on the exposed surface of the third intrinsic amorphous silicon thin film layer.
35. The method of claim 34, wherein the step of providing an N-doped layer comprises forming a first doped layer by deposition using a mixed gas of silane and phosphine mixed with at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, and forming a second doped layer by deposition using a mixed gas of silane, phosphine, and carbon dioxide mixed with at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere.
36. The method of claim 34, wherein the step of providing a P-doped layer comprises forming a first doped layer by deposition using a mixed gas of silane and trimethylboron mixed with at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere, and forming a second doped layer by deposition using a mixed gas of silane, borane, and carbon dioxide mixed with at least one of a hydrogen-containing atmosphere and a deuterium-containing atmosphere.
37. The method of claim 35, wherein the step of fabricating the first doped layer of the N-doped layer comprises controlling the ratio of the components in the mixed gas so that the doping amount of phosphorus of the first doped layer of the N-doped layer is 14ppm to 17ppm.
38. The method of claim 35, wherein the step of fabricating the second doped layer of the N-doped layer includes controlling the ratio of the components in the mixed gas such that the crystallinity of the second doped layer of the formed N-doped layer is 40 to 65% and the doping amount of phosphorus is 18ppm to 22ppm.
39. The method of claim 36, wherein the step of fabricating the first doped layer of the P-type doped layer comprises controlling the ratio of the components in the mixed gas so that the doping amount of boron of the first doped layer of the formed P-type doped layer is 14ppm to 17ppm.
40. The method of claim 36, wherein the step of fabricating the second doped layer of the P-doped layer comprises controlling the ratio of the components in the mixed gas such that the crystallinity of the second doped layer of the formed P-doped layer is 40-65% and the doping amount of boron is 18-22 ppm.
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