CN111564426B - RF front-end module, RF communication device and electronic equipment - Google Patents

Abstract

The present application discloses a radio frequency front-end module, a radio frequency communication device and an electronic device. The radio frequency front-end module includes a substrate, a filter circuit and a frequency divider. The substrate includes a plurality of dielectric layers stacked and a plurality of conductive layers respectively formed on the plurality of dielectric layers, at least two conductive layers in the substrate cooperate to form a filter circuit, and at least two conductive layers in the substrate cooperate to form a frequency divider. The substrate of the radio frequency front-end module adopts a multi-layer structure design and is formed with a stacked conductive layer. The plurality of conductive layers are separated by dielectric layers so that the frequency divider and the filter circuit are integrated in the packaging substrate, and the control chip and other discrete devices are installed on the packaging substrate, thereby realizing the integration of passive devices in a small volume, which greatly reduces the volume and cost.

Description

Radio frequency front end module, radio frequency communication device and electronic equipment

Technical Field

The present application relates to the field of radio frequency communications technologies, and in particular, to a radio frequency front end module, a radio frequency communication device, and an electronic device.

Background

In the related art, a System-on-a-Chip (SoC) integrated manner or a System-in-package (SYSTEM IN A PACKAGE, SIP) manner may be used to form the device module. Where the system on a chip may integrate a complete system on a single chip via an integrated circuit, integrating all or part of the necessary functionality into a single chip. However, for wireless communication applications, the radio frequency chip is difficult to implement by a silicon planar process, so that the integration level which can be implemented by using the system on chip is relatively low, and the performance is difficult to meet the requirements. How to design a structure of a radio frequency front end module to improve the integration level of the module so as to meet the miniaturization requirement of radio frequency front end electronic components becomes a technical problem to be solved.

Disclosure of Invention

The embodiment of the application provides a radio frequency front end module, a radio frequency communication device and electronic equipment.

The radio frequency front end module comprises a substrate, a filter circuit and a frequency divider, wherein the substrate comprises a plurality of dielectric layers which are stacked and arranged and a plurality of conductive layers which are respectively formed on the dielectric layers, at least 2 conductive layers in the substrate are matched to form the filter circuit, and at least 2 conductive layers in the substrate are matched to form the frequency divider.

The substrate of the radio frequency front end module adopts a multilayer structure design, and is provided with the conducting layers which are arranged in a stacked manner, the frequency divider and the filter circuit are integrated in the packaging substrate by separating the conducting layers through the dielectric layer, and the control chip and other discrete devices are arranged on the packaging substrate, so that the integration of the passive devices is realized in a small volume, and the volume and the cost are greatly reduced.

In some embodiments, the conductive layer includes a first ground layer, and a first electrode layer and a second electrode layer located on two adjacent sides of the first ground layer, where the first ground layer, the first electrode layer, and the second electrode layer cooperate to form the filter circuit.

In some embodiments, the radio frequency module includes a low noise amplifier, the first electrode layer and the first ground layer form a first capacitance to ground, and the first electrode layer is connected to an enable terminal of the low noise amplifier to filter an enable signal of the low noise amplifier.

In some embodiments, the second electrode layer forms a second capacitance to ground with the first ground layer, and the second electrode layer is connected to a power input terminal of the low noise amplifier to filter a power signal of the low noise amplifier.

In some embodiments, the conductive layer includes a connection layer on a surface of the substrate, the connection layer includes a plurality of connection points, and the low noise amplifier is electrically connected to the filter circuit through the plurality of connection points.

In some embodiments, at least 2 adjacent ones of the conductive layers forming the frequency divider include an inductor trace, the inductor traces in the adjacent at least 2 conductive layers being sequentially connected in a spiral to form an inductor.

In some embodiments, the number of the inductors is a plurality, and the inductor wirings forming different inductors are staggered in the stacking direction.

In some embodiments, at least 2 adjacent conductive layers of the conductive layers forming the frequency divider include a capacitor plate, and the capacitor plate corresponding to the position of the adjacent 2 conductive layers forms a capacitor.

In some embodiments, the conductive layer forming the frequency divider includes a second ground layer and a third electrode layer adjacent to the second ground layer, the third electrode layer including a plurality of capacitive plates forming a plurality of capacitances with the second ground layer.

The radio frequency communication device of the embodiment of the application comprises an antenna and the radio frequency front end module of any one of the embodiments, wherein the frequency divider is connected with the antenna.

The electronic equipment of the embodiment of the application comprises the radio frequency communication device of the embodiment.

In the radio frequency communication device and the electronic device of the embodiment of the application, the substrate of the radio frequency front end module adopts a multilayer structure design and is provided with the conducting layers which are arranged in a stacked way, the frequency divider and the filter circuit are integrated in the packaging substrate by separating the conducting layers through the dielectric layer, and the control chip and other discrete devices are arranged on the packaging substrate, so that the integration of the passive devices is realized in a small volume, and the volume and the cost are greatly reduced.

Additional aspects and advantages of embodiments of the application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of embodiments of the application.

Drawings

The foregoing and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings, in which:

Fig. 1 is a schematic block diagram of a radio frequency communication device according to an embodiment of the present application.

Fig. 2 is a schematic perspective view of a substrate according to an embodiment of the present application.

Fig. 3 is another schematic perspective view of a substrate according to an embodiment of the present application.

Fig. 4 is a schematic view showing another three-dimensional structure of a substrate according to an embodiment of the present application.

Fig. 5 is a schematic view showing another three-dimensional structure of a substrate according to an embodiment of the present application.

Fig. 6 is a schematic view of a layered structure of a substrate according to an embodiment of the present application.

Fig. 7 is a perspective view of a substrate according to an embodiment of the present application.

Fig. 8 is a schematic plan view of a layer of a multilayer structure in a substrate according to an embodiment of the present application.

Fig. 9 is another layer plan view schematic diagram of a multilayer structure in a substrate according to an embodiment of the present application.

Fig. 10 is a further layer plan view of a multilayer structure in a substrate according to an embodiment of the present application.

Fig. 11 is a schematic plan view of still another layer of the multilayer structure in the substrate according to the embodiment of the present application.

Fig. 12 is a schematic plan view of still another layer of the multilayer structure in the substrate according to the embodiment of the present application.

Fig. 13 is a schematic plan view of still another layer of the multilayer structure in the substrate according to the embodiment of the present application.

Fig. 14 is a further schematic plan view of a multilayer structure in a substrate according to an embodiment of the application.

Fig. 15 is a further schematic plan view of a multilayer structure in a substrate according to an embodiment of the present application.

Fig. 16 is a further schematic plan view of a multilayer structure in a substrate according to an embodiment of the application.

Fig. 17 is a further schematic plan view of a multilayer structure in a substrate according to an embodiment of the present application.

Fig. 18 is a further schematic plan view of a multilayer structure in a substrate according to an embodiment of the application.

Fig. 19 is a further schematic plan view of a multilayer structure in a substrate according to an embodiment of the application.

Fig. 20 is a schematic plan view of still another layer of the multilayer structure in the substrate according to the embodiment of the present application.

Fig. 21 is a schematic plan view of still another layer of the multilayer structure in the substrate according to the embodiment of the present application.

Fig. 22 is a schematic circuit diagram of a frequency divider according to an embodiment of the present application.

Description of main reference numerals:

The radio frequency communication device 1000, the radio frequency front end module 100, the substrate 10, the first surface 11, the second surface 12, the dielectric layer 13, the conductive layer 14, the device connection layer 141, the device connection point 1411, the first electrode layer 142, the first electrode 1421, the first ground layer 143, the first ground electrode 1431, the second electrode layer 144, the second electrode 1441, the low noise amplifier radio frequency output connection 1442, the frequency divider conductive layer 145, the capacitor plate 1451, the inductance trace 1452, the third electrode layer 146, the second ground layer 147, the second ground electrode 1471, the hollowed-out area 1472, the input/output connection layer 148, the input/output connection point 1481, the filter circuit 15, the frequency divider 16, the first port 161, the second port 162, the third port 163, the first LC serial circuit 164, the LC parallel circuit 165, the second LC serial circuit 166, the third LC serial circuit 167, the via 17, and the antenna 200.

Detailed Description

Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are exemplary only for explaining the present application and are not to be construed as limiting the present application.

For the system-in-chip, the SIP package can be a planar 2D package of a multi-chip module, and the structure of the 3D package can be reused, so that the package area is effectively reduced, and the system-in-package type is combined in a diversified manner through different chip arrangement modes and different internal bonding technologies, so that the system-in-package type has high flexibility.

Among these, module division and circuit design are important factors of SIP packaging technology. The module division refers to separating out a function, which is convenient for the subsequent whole machine integration and the SIP encapsulation. The circuit design takes into account details inside the module, the relation of the module to the outside, the integrity of the signal (delay, distribution, noise, etc.). The present application provides a radio frequency front end module 100, a radio frequency communication device 1000 and an electronic device (not shown) based on SIP packaging technology.

Referring to fig. 1-21, an rf front-end module 100 according to an embodiment of the present application includes a substrate 10, a filter circuit 15, and a frequency divider 16. The substrate 10 includes a plurality of dielectric layers 13 stacked and a plurality of conductive layers 14 formed on the plurality of dielectric layers 13, respectively, at least 2 conductive layers 14 in the substrate 10 cooperate to form a filter circuit 15, and at least 2 conductive layers 14 in the substrate 10 cooperate to form a frequency divider 16.

The rf front-end module 100 according to the embodiment of the present application may be applied to the rf communication device 1000 according to the embodiment of the present application. That is, the radio frequency communication device 1000 according to the embodiment of the present application includes the radio frequency front end module 100 according to the embodiment of the present application.

The radio frequency communication apparatus 1000 according to the embodiment of the present application can be applied to the electronic device according to the embodiment of the present application. That is, the electronic device of the embodiment of the present application includes the radio frequency communication apparatus 1000 of the embodiment of the present application.

In the electronic device and the radio frequency communication apparatus 1000 according to the embodiments of the present application, the substrate 10 of the radio frequency front end module 100 is designed in a multi-layer structure, and is formed with the conductive layers 14 stacked, the plurality of conductive layers 14 are separated by the dielectric layer 13 to integrate the frequency divider 16 and the filter circuit 15 in the package substrate 10, and the control chip and other discrete devices are mounted on the package substrate 10, so that the integration of the passive devices is realized in a small volume, and the volume and cost are greatly reduced.

In some embodiments, the multilayer structure of the substrate 10 may be manufactured by a multilayer organic thin film process, a multilayer low temperature co-fired ceramic process, a multilayer printed circuit board process, a semiconductor volumetric circuit process, or the like.

In this way, passive devices such as transmission lines, inductors, capacitors and the like can be embedded in the substrate 10, active devices can be placed on the surface of the substrate, and the frequency divider 16 and the filter circuit 15 are integrated in the substrate 10 through connection between layers through holes.

Referring to fig. 2, 3 and 8, in some embodiments, the substrate 10 includes a first surface 11 and a second surface 12 opposite to each other. Conductive layer 14 includes device connection layer 141 at first surface 11 and input-output connection layer 148 at first surface 11.

The active device may be mounted on the first surface 11 and electrically connected to the substrate 10 through the device connection layer 141, and the input/output connection layer 148 is used for connecting an external circuit, and is used as an input/output interface of the whole rf front-end module 100.

Referring to fig. 7, in some embodiments, the dielectric layers 13 and the conductive layers 14 may be provided with vias 17, and the conductive layers 14 may be electrically connected through the vias 17.

Specifically, the vias 17 of the dielectric layer 13 may pass the conductive lines through any 2 conductive layers 14, and the vias 17 on the conductive layers 14 may pass the conductive lines through 2 conductive layers 14 spaced apart by the connection. The frequency divider 16 and the filter circuit 15 can be formed by reasonably designing the via hole 17 according to the connection mode of the inductance and the capacitance in the substrate 10.

In some embodiments, dielectric layer 13 is provided with vias 17 circumferentially offset from conductive layer 14.

Thus, by opening the via hole 17 at the periphery of the dielectric layer 13, the active device mounted on the first surface 11 can be electrically connected to the input/output interface of the second surface 12.

In some embodiments, the conductive layer 14 may be made of a metal material with better conductivity, such as gold, silver, copper, aluminum, and/or alloy, or a composite polymer material, such as conductive plastic, conductive rubber, conductive fiber, and/or conductive paint.

Specifically, the shape and size of the conductive layer 14 may be set according to actual needs.

Referring to fig. 6 and fig. 9-11, in some embodiments, the conductive layer 14 includes a first ground layer 143, and a first electrode layer 142 and a second electrode layer 144 disposed on two adjacent sides of the first ground layer 143, where the first ground layer 143, the first electrode layer 142, and the second electrode layer 144 cooperate to form the filter circuit 15.

Wherein the first ground layer 143 may include a first ground electrode 1431, the first electrode layer 142 may include a first electrode 1421, and the second electrode layer 144 may include a second electrode 1441. The first ground electrode 1431, the first electrode 1421, and the second electrode 1441 may have a plate shape, and thus, when the first ground electrode 1431, the first electrode 1421, and the second electrode 1441 are stacked, electrode plates that are disposed at intervals and parallel to each other may be formed, and a capacitor may be configured to realize a filtering function, that is, form the filter circuit 15.

In some embodiments, the rf module includes a low noise amplifier (not shown), the first electrode 1421 and the first ground electrode 1431 may form a first capacitance to ground, and the first electrode 1421 is connected to an enable terminal of the low noise amplifier to filter an enable signal of the low noise amplifier.

Therefore, the first grounding capacitor can filter out a part of stray or interference overlapped on the enabling signal, and the stable operation of the low-noise amplifier is ensured.

In some embodiments, the second electrode 1441 and the first ground electrode 1431 may form a second capacitance to ground, and the second electrode layer 144 is connected to the power input terminal of the low noise amplifier to filter the power signal of the low noise amplifier.

Therefore, the second grounding capacitor can filter the interference of the power supply signal of the low-noise amplifier, and the normal operation of the low-noise amplifier is ensured.

In some embodiments, the first ground electrode 1431 may be a plate, and the first ground electrode 1431 may be hollowed out to form the via 17.

Thus, the via hole 17 may enable the interconnection conductive line to pass through, and perform upper and lower electrical connection. And the redundant polar plates can be removed by hollowing out the first grounding layer 143 because of overlarge polar plate coverage area, so that the upper medium and the lower medium can be reliably combined.

In the illustrated embodiment, 3 conductive layers 14 (L2-L4) within the substrate 10 cooperate to form a filter circuit 15. Of course, in other embodiments, 2 conductive layers or more than 3 conductive layers within the substrate 10 may cooperate together to form the filter circuit 15.

In some embodiments, the second electrode layer 144 includes a low noise amplifier radio frequency output wire 1442, the low noise amplifier radio frequency output wire 1442 being connected to the input output connection layer 148. Further, the input-output connection layer 148 includes a plurality of input-output connection points 1481 and a plurality of low noise amplifier rf output connections 1442 may be connected to respective input-output connection points 1481 through vias 17.

In some embodiments, the device connection layer 141 includes a plurality of device connection points 1411, and the low noise amplifier is electrically connected to the filter circuit 15 through the plurality of device connection points 1411.

Specifically, the device connection point 1411 may be a pad, and the low noise amplifier may be soldered to the substrate 10 through the pad, ensuring stable packaging of the low noise amplifier. The input/output connection points 1481 may be package pins through which the rf front-end module 100 may be soldered to external circuitry for electrical connection.

In some embodiments, the input-output connection points 1481 may be plated to form a metal plating of tin, nickel, or gold.

Thus, the solderability of the substrate can be increased, which is beneficial to the installation of the rf front-end module 100.

In some embodiments, the rf front-end module 100 includes a surface acoustic wave filter (SAW) and/or a low noise amplifier matching device (not shown) mounted on the first surface 11, and the SAW filter and/or the low noise amplifier matching device is electrically connected to the substrate 10 through a connection point.

The low noise amplifier, the saw filter and/or the low noise amplifier may be soldered to the surface of the substrate 10 using a bare chip or a packaged chip, thereby forming a module having a complete function.

Referring to fig. 12-20, in some embodiments, at least 2 conductive layers 145 among the conductive layers 145 forming the frequency divider 16 include inductor traces 1452, and the inductor traces 1452 adjacent to each other at corresponding positions in the stacking direction are sequentially connected in a spiral shape to form an inductor.

Specifically, the inductor trace 1452 is mainly formed by a thin and long wire on the dielectric layer 13, the inductor trace 1452 may be disposed along a corresponding annular region, and the inductor traces 1452 in different conductive layers 145 may be disposed at different positions in the annular region, so that the inductor axial connection at the corresponding position may form an inductor in a spiral shape in three-dimensional space.

In some embodiments, the inductor traces 1452 adjacent to corresponding positions in the stacking direction may be the inductor traces 1452 formed on the adjacent 2 dielectric layers 13. In other embodiments, the inductor traces 1452 adjacent to each other at corresponding positions in the stacking direction may be spaced apart by a plurality of dielectric layers 13, that is, the inductor traces 1452 adjacent to each other at corresponding positions in the stacking direction may be formed on the 2 dielectric layers 13 not adjacent to each other.

In some embodiments, the inductive traces 1452 in the conductive layers 145 may be linear, arcuate, meander line, or other shape in each conductive layer 145, not specifically provided herein.

In some embodiments, the number of inductors is multiple, and the inductor traces 1452 forming different inductors are staggered in the stacking direction.

Therefore, the mutual influence among different inductors can be reduced, and the normal operation of the inductors is ensured.

In some embodiments, at least 2 adjacent ones of the conductive layers 145 forming the frequency divider 16 include a capacitive plate 1451, the capacitive plate 1451 located in the corresponding position in the adjacent 2 conductive layers 145 forming a capacitance.

As such, the capacitor plate 1451 corresponding to the position of the adjacent 2 conductive layers 145 stacked may form a capacitor to integrate the capacitor of the frequency divider 16 within the substrate 10.

Referring to fig. 19 and 20, in some embodiments, the conductive layer 145 forming the frequency divider 16 includes a second ground layer 147 and a third electrode layer 146 adjacent to the second ground layer 147, the third electrode layer 146 includes a plurality of capacitor plates 1451, and the plurality of capacitor plates 1451 form a plurality of capacitors with the second ground layer 147.

Specifically, the second ground layer 147 includes a second ground electrode 1471, and capacitor plates 1451 on the third electrode layer 146 are formed on the dielectric layer 13 at intervals, and each capacitor plate 1451 is connected to the second ground electrode 1471 to form a plurality of ground capacitors. A plurality of ground capacitors may be coupled with respective inductors to cooperatively form frequency divider 16.

In some embodiments, the second ground layer 147 may include a hollowed-out region 1472.

The hollowed-out area 1472 can be set corresponding to the inductor, so that the parasitic capacitance of the frequency divider 16 to the ground is eliminated, so that the loss of useful signals is reduced, meanwhile, the equivalent inductance value of the inductor inside the module is reduced due to the parasitic effect to the ground, and the hollowed-out area 1472 is formed by locally hollowing out under the inductor, so that the equivalent inductance value is improved.

Similarly, the second ground layer 147 has an oversized plate coverage area, so that the upper and lower medium layers can be combined reliably by arranging the hollowed-out area 1472.

In some embodiments, the first ground electrode 1431 is electrically connected to the second ground electrode 1471.

In this way, the first ground layer 143 and the second ground layer 147 can be kept at the same potential.

In the illustrated embodiment, 9 conductive layers 14 (L5-L13) within the substrate 10 cooperate to form a frequency divider 16. Of course, in other embodiments, 2-8 conductive layers or more than 9 conductive layers 14 within the substrate 10 may cooperate together to form the frequency divider 16, which is not specifically limited herein.

Referring to fig. 22, in some embodiments, the frequency divider 16 includes a first port 161, a second port 162, and a third port 163, where a first path is formed between the first port 161 and the third port 163, and a second path is formed between the second port 162 and the third port 163.

As shown in fig. 4 and 5, the first port 161 and the second port 163 may be disposed at the input-output connection layer 148 of the substrate 10, and the third port 163 may be disposed at the device connection layer 141 of the substrate 10.

In some embodiments, the first path includes an LC parallel circuit 165 connecting the first port 161 and the third port 163 and a first LC series circuit 164 connecting the third port 163 and ground. Specifically, a capacitor C6 in the first LC series circuit 164 is grounded, and an inductor L ₄ is connected to the third port 163.

In some embodiments, the second path includes a first path, a first capacitance C1 and a second LC series circuit 166 connecting the first port 161 and ground in series, a third LC series circuit 167 connecting the second LC series circuit 166 and the second port 162 in parallel, and a second capacitance C4 connecting the second port 162 and ground.

Specifically, the capacitor C2 in the second LC serial circuit 166 is grounded, the inductor L ₂ is connected to the capacitor C3 and the first capacitor C1 of the third LC serial circuit 167, and the inductor L ₁ of the third LC serial circuit 167 is connected to the second port 162.

The radio frequency communication device 1000 according to the embodiment of the present application includes an antenna 200, and the frequency divider 16 is connected to the antenna 200.

In the description of the present specification, the descriptions of the terms "one embodiment," "some embodiments," or "one example" and the like, mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

While embodiments of the present application have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the application, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the application.

Claims (9)

1. A radio frequency front end module, comprising:

the substrate comprises a plurality of dielectric layers and a plurality of conductive layers, wherein the dielectric layers are arranged in a stacked mode, and the conductive layers are respectively formed on the dielectric layers;

The filter circuit is formed by matching at least 2 conductive layers in the substrate, the conductive layers comprise a first grounding layer, a first electrode layer and a second electrode layer, the first electrode layer and the second electrode layer are positioned on two adjacent sides of the first grounding layer, the first electrode layer and the second electrode layer are matched to form the filter circuit, the first electrode layer and the first grounding layer form a first grounding capacitor, the second electrode layer and the first grounding layer form a second grounding capacitor, wherein the first grounding layer comprises a first grounding electrode, the first electrode layer comprises a first electrode, the second electrode layer comprises a second electrode, the first grounding electrode is a polar plate, a through hole is formed in the first grounding electrode in a hollow mode, and

The frequency divider is formed by matching at least 2 conductive layers in the substrate, the conductive layers forming the frequency divider comprise a second grounding layer and a third electrode layer adjacent to the second grounding layer, the second grounding layer comprises a second grounding electrode, a plurality of capacitor plates on the third electrode layer are formed on the dielectric layer at intervals, each capacitor plate is connected with the second grounding electrode to form a plurality of grounding capacitors, and a plurality of grounding capacitors are connected with corresponding inductors to form the frequency divider in a matching mode, and the second grounding layer comprises a hollowed-out area.

2. The rf front-end module of claim 1, comprising a low noise amplifier, the first electrode layer being connected to an enable terminal of the low noise amplifier to filter an enable signal of the low noise amplifier.

3. The rf front-end module of claim 2, wherein the second electrode layer is connected to a power input of the low noise amplifier to filter a power signal of the low noise amplifier.

4. The rf front-end module of claim 2, wherein the conductive layer comprises a connection layer on a surface of the substrate, the connection layer comprises a plurality of connection points, and the low noise amplifier is electrically connected to the filter circuit through a plurality of the connection points.

5. The radio frequency front end module of claim 1, wherein at least 2 of the conductive layers forming the frequency divider comprise inductor traces, the inductor traces in the adjacent at least 2 conductive layers being sequentially connected in a spiral to form an inductor.

6. The rf front-end module of claim 5, wherein the number of inductors is plural, and the inductor traces forming different inductors are staggered in the stacking direction.

7. The radio frequency front end module of claim 1, wherein at least 2 adjacent ones of the conductive layers forming the frequency divider include capacitive plates, the capacitive plates corresponding in position to the adjacent 2 conductive layers forming a capacitance.

8. A radio frequency communications device, comprising:

Antenna, and

The radio frequency front end module of any of claims 1-7, said frequency divider being coupled to said antenna.

9. An electronic device comprising the radio frequency communication device of claim 8.