CN111546228A - Grinding pad temperature control method and device and grinding equipment - Google Patents
Grinding pad temperature control method and device and grinding equipment Download PDFInfo
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- CN111546228A CN111546228A CN202010406936.XA CN202010406936A CN111546228A CN 111546228 A CN111546228 A CN 111546228A CN 202010406936 A CN202010406936 A CN 202010406936A CN 111546228 A CN111546228 A CN 111546228A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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Abstract
Description
技术领域technical field
本发明涉及半导体技术领域,特别涉及一种研磨垫温度控制方法、装置及研磨设备。The present invention relates to the technical field of semiconductors, and in particular, to a method, device and polishing equipment for controlling the temperature of a polishing pad.
背景技术Background technique
化学机械研磨(Chemical Mechanical Planarization,CMP)是半导体制造过程中,对晶片表面进行平坦化的工艺。在化学机械研磨过程中,研磨垫的温度对研磨速率具有很大的影响,但是现有的化学机械研磨工艺无法有效地调节研磨垫的表面温度,从而影响研磨的效果。Chemical Mechanical Planarization (CMP) is a process for planarizing the surface of a wafer during semiconductor manufacturing. In the chemical mechanical polishing process, the temperature of the polishing pad has a great influence on the polishing rate, but the existing chemical mechanical polishing process cannot effectively adjust the surface temperature of the polishing pad, thereby affecting the polishing effect.
发明内容SUMMARY OF THE INVENTION
有鉴于此,本发明的目的在于提供一种研磨垫温度控制方法、装置及研磨设备,有效控制研磨垫的表面温度,提高研磨效果。In view of this, the purpose of the present invention is to provide a polishing pad temperature control method, device and polishing equipment, which can effectively control the surface temperature of the polishing pad and improve the polishing effect.
为实现上述目的,本发明有如下技术方案:For achieving the above object, the present invention has the following technical solutions:
一种研磨垫温度控制方法,包括:A method for controlling the temperature of a polishing pad, comprising:
在研磨样品之前将研磨垫的表面温度设置为初始研磨温度;Set the surface temperature of the polishing pad to the initial grinding temperature before grinding the sample;
在研磨样品的过程中监测所述研磨垫的表面温度;monitoring the surface temperature of the polishing pad during the grinding of the sample;
在所述研磨垫的表面温度变化值超过预设阈值时,调节所述研磨垫的表面温度至所述初始研磨温度。When the change value of the surface temperature of the polishing pad exceeds a preset threshold, the surface temperature of the polishing pad is adjusted to the initial polishing temperature.
可选的,所述调节所述研磨垫的表面温度至所述初始研磨温度包括:Optionally, the adjusting the surface temperature of the polishing pad to the initial grinding temperature includes:
通过研磨控片且在研磨控片的过程中监测研磨垫的表面温度,直至所述研磨垫的表面温度达到所述初始研磨温度。The surface temperature of the polishing pad is monitored by grinding the control sheet and during the process of grinding the control sheet, until the surface temperature of the polishing pad reaches the initial grinding temperature.
可选的,所述在研磨样品之前将研磨垫表面的温度设置为初始研磨温度的方法包括:Optionally, the method for setting the temperature of the polishing pad surface to the initial grinding temperature before grinding the sample includes:
在研磨样品之前研磨控片,以使所述研磨垫的表面温度达到所述初始研磨温度。The control sheet was ground prior to grinding the samples so that the surface temperature of the grinding pad reached the initial grinding temperature.
还包括:Also includes:
设置承载区,所述承载区用于承载控片,以便控片研磨。A bearing area is provided, and the bearing area is used to carry the control sheet for grinding the control sheet.
可选的,还包括:Optionally, also include:
在所述初始研磨温度下进行样品的研磨。Milling of the samples was performed at the initial milling temperature.
一种研磨垫温度控制装置,包括:A polishing pad temperature control device, comprising:
温度设置单元,用于在研磨样品之前将研磨垫的表面温度设置为初始研磨温度;A temperature setting unit for setting the surface temperature of the polishing pad as the initial grinding temperature before grinding the sample;
温度监测单元,用于在研磨样品的过程中监测研磨垫的表面温度;A temperature monitoring unit for monitoring the surface temperature of the polishing pad during the process of grinding the sample;
温度调节单元,用于在所述研磨垫的表面温度变化值超过预设阈值时,调节所述研磨垫的表面温度至所述初始研磨温度。The temperature adjustment unit is configured to adjust the surface temperature of the polishing pad to the initial polishing temperature when the change value of the surface temperature of the polishing pad exceeds a preset threshold.
可选的,所述温度调节单元具体用于通过研磨控片且在研磨控片的过程中监测研磨垫的表面温度,直至所述研磨垫的表面温度达到所述初始研磨温度。Optionally, the temperature adjustment unit is specifically configured to grind the control sheet and monitor the surface temperature of the polishing pad during the process of grinding the control sheet until the surface temperature of the polishing pad reaches the initial grinding temperature.
可选的,所述温度设置单元具体用于在研磨样品之前研磨控片,直至所述研磨垫的表面温度达到所述初始研磨温度。Optionally, the temperature setting unit is specifically configured to grind the control sheet before grinding the sample until the surface temperature of the grinding pad reaches the initial grinding temperature.
可选的,还包括:Optionally, also include:
第一单元,所述第一单元用于设置承载区,所述承载区用于承载控片,以便控片研磨。The first unit, the first unit is used for setting a bearing area, and the bearing area is used for bearing the control sheet for grinding the control sheet.
一种研磨设备,包括:研磨平台、研磨垫以及研磨头,所述研磨垫设于所述研磨平台上,所述研磨头设置于所述研磨垫上,还包括:上述任意一项所述的研磨垫温度控制装置。A grinding equipment, comprising: a grinding platform, a grinding pad and a grinding head, the grinding pad is arranged on the grinding platform, the grinding head is arranged on the grinding pad, and further comprises: the grinding head described in any one of the above Pad temperature control device.
本发明实施例提供的一种研磨垫温度控制方法,在研磨样品之前将研磨垫的表面温度设置为初始研磨温度,在研磨样品的过程中监测研磨垫表面的温度,而后在研磨垫表面的温度变化值超过预设阈值时,调节研磨垫表面的温度至初始研磨温度,这样,在研磨样品之前将研磨垫的表面温度设置为研磨样品的最佳温度,有利于精准的控制研磨样品的速率,而后在研磨样品的过程中,实时检测研磨垫表面的温度,在研磨垫的表面温度变化值超过预设阈值时,通过研磨控片使得研磨垫的表面温度达到研磨样品的最佳温度,精确控制研磨垫的表面温度,有利于提高化学机械研磨的稳定性,提高研磨的效率。In a method for controlling the temperature of a polishing pad provided by the embodiment of the present invention, the surface temperature of the polishing pad is set to the initial polishing temperature before grinding the sample, the temperature of the surface of the polishing pad is monitored during the process of grinding the sample, and then the temperature of the surface of the polishing pad is monitored When the change value exceeds the preset threshold, adjust the temperature of the surface of the polishing pad to the initial grinding temperature. In this way, the surface temperature of the polishing pad is set to the optimum temperature for the sample to be ground before grinding the sample, which is beneficial to accurately control the rate of grinding the sample. Then, in the process of grinding the sample, the temperature of the surface of the polishing pad is detected in real time. When the surface temperature change value of the polishing pad exceeds the preset threshold, the surface temperature of the polishing pad reaches the optimal temperature of the polishing sample through the grinding control sheet, and the precise control The surface temperature of the polishing pad is beneficial to improve the stability of chemical mechanical polishing and improve the efficiency of polishing.
附图说明Description of drawings
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其它的附图。In order to illustrate the embodiments of the present invention or the technical solutions in the prior art more clearly, the following briefly introduces the accompanying drawings that need to be used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are For some embodiments of the present invention, for those of ordinary skill in the art, other drawings can also be obtained according to these drawings without creative effort.
图1示出了根据本发明实施例研磨垫温度控制方法的流程示意图;1 shows a schematic flow chart of a method for controlling the temperature of a polishing pad according to an embodiment of the present invention;
图2示出了根据本发明实施例的研磨设备的俯视结构示意图。FIG. 2 shows a schematic top view of the structure of a grinding apparatus according to an embodiment of the present invention.
具体实施方式Detailed ways
为使本发明的上述目的、特征和优点能够更加明显易懂,下面结合附图对本发明的具体实施方式做详细的说明。In order to make the above objects, features and advantages of the present invention more clearly understood, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
在下面的描述中阐述了很多具体细节以便于充分理解本发明,但是本发明还可以采用其它不同于在此描述的其它方式来实施,本领域技术人员可以在不违背本发明内涵的情况下做类似推广,因此本发明不受下面公开的具体实施例的限制。Many specific details are set forth in the following description to facilitate a full understanding of the present invention, but the present invention can also be implemented in other ways different from those described herein, and those skilled in the art can do so without departing from the connotation of the present invention. Similar promotion, therefore, the present invention is not limited by the specific embodiments disclosed below.
正如背景技术的描述,在化学机械研磨过程中,研磨垫的温度对研磨速率(removal rate,RR)具有很大的影响,现有的化学机械研磨机台通过光反馈温度传感器和循环水温度调节系统进行研磨垫温度的控制,研磨头上装配的光反馈传感器监测研磨垫的表面温度,在研磨垫的表面温度低于研磨样品所需的温度时,研磨平台内的循环水温度调节系统负责进行加热提高研磨垫的表面温度,但是循环水温度调节系统加热研磨垫的路径较长,循环水需要经过研磨平台直至研磨垫的底部,在传输的过程中循环水的热量不断散失,到达研磨垫底部时的温度低于循环水最初的温度,此外由于研磨垫的材质是聚氨酯,聚氨酯是热的不良导体,在加热研磨垫底部时对研磨垫上层表面的影响较小或较慢,从而使得研磨垫的表面温度远低于循环水最初的温度,这样无法有效调节研磨垫的表面温度至研磨样品的最佳温度,导致研磨速率不稳定,从而影响样品的研磨效果。As described in the background art, in the chemical mechanical polishing process, the temperature of the polishing pad has a great influence on the polishing rate (RR). The existing chemical mechanical polishing machine is adjusted by the optical feedback temperature sensor and the circulating water temperature. The system controls the temperature of the polishing pad. The optical feedback sensor installed on the polishing head monitors the surface temperature of the polishing pad. When the surface temperature of the polishing pad is lower than the temperature required for grinding the sample, the circulating water temperature adjustment system in the polishing platform is responsible for Heating increases the surface temperature of the polishing pad, but the circulating water temperature adjustment system has a long path for heating the polishing pad. The circulating water needs to pass through the polishing platform to the bottom of the polishing pad. During the transmission process, the heat of the circulating water is continuously dissipated and reaches the bottom of the polishing pad. The temperature at this time is lower than the initial temperature of the circulating water. In addition, because the material of the polishing pad is polyurethane, which is a poor conductor of heat, the effect on the upper surface of the polishing pad is small or slow when the bottom of the polishing pad is heated, so that the polishing pad is heated. The surface temperature of the pad is much lower than the initial temperature of the circulating water, which cannot effectively adjust the surface temperature of the polishing pad to the optimum temperature for grinding the sample, resulting in unstable grinding rate, thus affecting the grinding effect of the sample.
为此,本申请提出一种研磨垫温度控制方法,在研磨样品之前将研磨垫的表面温度设置为初始研磨温度,在研磨样品的过程中监测研磨垫表面的温度,而后在研磨垫表面的温度变化值超过预设阈值时,调节研磨垫表面的温度至初始研磨温度,这样,在研磨样品之前将研磨垫的表面温度设置为研磨样品的最佳温度,有利于精准的控制研磨样品的速率,而后在研磨样品的过程中,实时检测研磨垫表面的温度,在研磨垫的表面温度变化值超过预设阈值时,通过研磨控片使得研磨垫的表面温度达到研磨样品的最佳温度,精确控制研磨垫的表面温度,有利于提高化学机械研磨的稳定性,提高研磨的效率。To this end, the present application proposes a method for controlling the temperature of a polishing pad. Before grinding the sample, the surface temperature of the polishing pad is set to the initial grinding temperature, and the temperature of the surface of the polishing pad is monitored during the process of grinding the sample, and then the temperature of the surface of the polishing pad is monitored When the change value exceeds the preset threshold, adjust the temperature of the surface of the polishing pad to the initial grinding temperature. In this way, the surface temperature of the polishing pad is set to the optimum temperature for the sample to be ground before grinding the sample, which is beneficial to accurately control the rate of grinding the sample. Then, in the process of grinding the sample, the temperature of the surface of the polishing pad is detected in real time. When the surface temperature change value of the polishing pad exceeds the preset threshold, the surface temperature of the polishing pad reaches the optimal temperature of the polishing sample through the grinding control sheet, and the precise control The surface temperature of the polishing pad is beneficial to improve the stability of chemical mechanical polishing and improve the efficiency of polishing.
为了便于理解本申请的技术方案和技术效果,以下将结合附图对本申请的实施例进行详细的说明。In order to facilitate the understanding of the technical solutions and technical effects of the present application, the embodiments of the present application will be described in detail below with reference to the accompanying drawings.
参考图1所示,在步骤S01中,在研磨样品之前将研磨垫的表面温度设置为初始研磨温度。Referring to FIG. 1 , in step S01 , the surface temperature of the polishing pad is set as the initial polishing temperature before polishing the sample.
本申请实施例中,初始研磨温度为研磨样品时的最佳温度,即研磨垫的表面温度达到初始研磨温度时,研磨样品的效果最好。本实施例中,可以在化学机械研磨(ChemicalMechanical Polish,CMP)制程的工艺发布标准(Process Release Standard,PRS)中添加初始研磨温度即研磨样品时的最佳温度这一参数,取代现有的每道化学机械研磨制程中研磨样品之前研磨固定数量的控片,从而能够精准的控制研磨速率。In the examples of the present application, the initial grinding temperature is the optimum temperature when grinding the sample, that is, when the surface temperature of the polishing pad reaches the initial grinding temperature, the effect of grinding the sample is the best. In this embodiment, the parameter of the initial grinding temperature, that is, the optimum temperature when grinding the sample, can be added to the Process Release Standard (PRS) of the Chemical Mechanical Polish (CMP) process, replacing the existing each The Dow Chemical Mechanical Polishing process grinds a fixed number of control slices before grinding the sample, allowing precise control of the grinding rate.
本实施例中,每道化学机械研磨制程的初始研磨温度可以不同,也可以相同。例如在需要进行浅沟槽隔离(Shallow Trench Isolation,STI)化学机械研磨时所需的初始研磨温度为T1,在进行氧化物(Oxide)化学机械研磨时所需的初始研磨温度为T2,T1和T2可以相同,也可以不同。在每道化学机械研磨工艺进行之前,将研磨垫的表面温度设置为该道工艺中研磨样品时的初始研磨温度即最佳温度,后续在该初始研磨温度下进行样品的研磨,有利于精准的控制研磨样品的速率。In this embodiment, the initial grinding temperature of each chemical mechanical polishing process may be different or the same. For example, when Shallow Trench Isolation (STI) chemical mechanical polishing is required, the initial polishing temperature is T 1 , and when oxide chemical mechanical polishing is performed, the initial polishing temperature is T 2 , T1 and T2 may be the same or different. Before each chemical mechanical polishing process is carried out, the surface temperature of the polishing pad is set to the initial grinding temperature when the sample is ground in the process, that is, the optimal temperature. The subsequent grinding of the sample at this initial grinding temperature is conducive to accurate and precise grinding. Control the rate at which the sample is ground.
本实施例中,在研磨样品之前将研磨垫表面的温度设置为初始研磨温度的方法可以包括:在研磨样品之前研磨控片,以使研磨垫的表面温度达到初始研磨温度。In this embodiment, the method for setting the temperature of the surface of the polishing pad to the initial grinding temperature before grinding the sample may include: grinding the control sheet before grinding the sample, so that the surface temperature of the polishing pad reaches the initial grinding temperature.
具体的,可以为,通过控制研磨控片的数量来提高研磨垫的表面温度,可以在研磨样品之前检测研磨垫的表面温度,记为T3,并获取研磨样品时所需的初始研磨温度,记为T4,从而得到研磨样品时所需的初始研磨温度与研磨样品之前研磨垫的表面温度的差值,记为T4-T3。而后检测研磨一片控片可以提高研磨垫的表面温度的具体数值,记为a,根据研磨样品时的初始研磨温度与研磨样品之前研磨垫的表面温度的差值T4-T3,以及研磨一片控片可以提高的研磨垫的表面温度a,获得达到研磨时的初始研磨温度需要的控片的数量(T4-T3)/a。Specifically, the surface temperature of the polishing pad can be increased by controlling the number of grinding control sheets, and the surface temperature of the polishing pad can be detected before grinding the sample, denoted as T 3 , and the initial grinding temperature required when the sample is obtained is obtained, Denoted as T 4 , to obtain the difference between the initial polishing temperature required for polishing the sample and the surface temperature of the polishing pad before polishing the sample, denoted as T 4 -T 3 . Then, the specific value of the surface temperature of the polishing pad can be improved by grinding a control piece, denoted as a, according to the difference T 4 -T 3 between the initial grinding temperature when grinding the sample and the surface temperature of the grinding pad before grinding the sample, and grinding a piece The control sheet can increase the surface temperature a of the polishing pad to obtain the number of control sheets (T 4 -T 3 )/a required to reach the initial grinding temperature during grinding.
举例说明,研磨一片控片可以使得研磨垫的表面温度提高0.5℃,研磨样品之前研磨垫的表面温度为38℃,研磨样品时所需的初始研磨温度为40℃,则达到研磨样品的初始研磨温度即最佳温度,需要研磨控片的数量为4。需要说明的是,本实施例中的控片是相同的控片,从而提高化学机械研磨的稳定性,降低研磨速率不同引起的各种问题的概率。For example, grinding a control sheet can increase the surface temperature of the polishing pad by 0.5 °C, the surface temperature of the polishing pad before grinding the sample is 38 °C, and the initial grinding temperature required for grinding the sample is 40 °C, then the initial grinding of the sample is achieved. The temperature is the optimum temperature, and the number of grinding control sheets is 4. It should be noted that the control films in this embodiment are the same control films, thereby improving the stability of chemical mechanical polishing and reducing the probability of various problems caused by different grinding rates.
本实施例中,也可以在研磨控片的过程中实时监测研磨垫的表面温度,在研磨垫的表面温度达到研磨样品的初始研磨温度时,停止研磨控片。在研磨控片的过程中,可以在将一片控片消耗完后再进行下一控片的研磨,也可以在将一片控片部分消耗后便进行下一控片的研磨。本实施例中的控片可以是相同的控片,也可以是不同的控片。在具体的实施例中,控片可以是一些样品的残次品,也可以是一些质量低于样品的其他替代品,从而降低制造成本。In this embodiment, the surface temperature of the polishing pad can also be monitored in real time during the process of grinding the control sheet, and when the surface temperature of the polishing pad reaches the initial grinding temperature of the grinding sample, the grinding control sheet is stopped. In the process of grinding the control piece, the grinding of the next control piece can be performed after one piece of control piece is consumed, or the next control piece can be ground after partially consumed. The control films in this embodiment may be the same control films, or may be different control films. In a specific embodiment, the control sheet can be a defective product of some samples, or can be some other substitutes with lower quality than the samples, thereby reducing the manufacturing cost.
本实施例中,还可以设置承载区(wafer box),该承载区用于承载控片,从而在研磨的过程中能够及时提供控片,防止研磨的过程中出现闲置(idle)的情况,提高研磨的效率。承载区可以靠近研磨垫,以便于进行控片的研磨。在具体的实施例中,可以根据需要的控片的数量设置承载区的大小。In this embodiment, a wafer box can also be set up, and the bearing region is used to carry the control sheet, so that the control sheet can be provided in time during the grinding process, so as to prevent the situation from being idle during the grinding process, and improve the efficiency of the grinding process. Grinding efficiency. The bearing area can be close to the polishing pad to facilitate the polishing of the control sheet. In a specific embodiment, the size of the bearing area can be set according to the required number of control sheets.
在步骤S02中,在研磨样品的过程中监测研磨垫的表面温度。In step S02, the surface temperature of the polishing pad is monitored during the process of grinding the sample.
在化学机械研磨过程中,将晶片放置于研磨头上,将晶片的抛光面朝向研磨垫,通过研磨头给晶片施加压力,同时晶片与研磨垫之间供给有研磨液,通过晶片与抛光垫之间的相对运动以及与研磨液之间的化学反应,实现晶片表面的平坦化。在不断供给研磨液的过程中,可能导致研磨垫的表面温度下降,在研磨垫的表面温度低于初始研磨温度时,会影响研磨的效果,进而会影响产品的性能。In the chemical mechanical polishing process, the wafer is placed on the polishing head, the polishing surface of the wafer is facing the polishing pad, and pressure is applied to the wafer through the polishing head. At the same time, a polishing liquid is supplied between the wafer and the polishing pad. The relative motion between the wafers and the chemical reaction with the polishing liquid realize the planarization of the wafer surface. In the process of continuously supplying the polishing liquid, the surface temperature of the polishing pad may drop. When the surface temperature of the polishing pad is lower than the initial polishing temperature, the polishing effect will be affected, and the performance of the product will be affected.
在研磨样品的过程中可以实时监测研磨垫的表面温度,从而有效监控研磨垫的表面温度,避免研磨垫的表面温度变化较大影响研磨的效果。在研磨的过程中也可以按周期间隔检测研磨垫的表面温度,可以选择较短的时间间隔,避免在研磨的过程中无法及时发现研磨垫的表面温度变化。In the process of grinding the sample, the surface temperature of the polishing pad can be monitored in real time, so as to effectively monitor the surface temperature of the polishing pad and avoid the large change of the surface temperature of the polishing pad affecting the polishing effect. During the grinding process, the surface temperature of the polishing pad can also be detected at periodic intervals, and a shorter time interval can be selected to avoid failure to detect the surface temperature change of the polishing pad in time during the grinding process.
在步骤S03中,在研磨垫的表面温度变化值超过预设阈值时,调节研磨垫的表面温度至初始研磨温度。In step S03, when the change value of the surface temperature of the polishing pad exceeds a preset threshold, the surface temperature of the polishing pad is adjusted to the initial polishing temperature.
本申请实施例中,研磨垫的表面温度变化值为设置的研磨垫表面的初始研磨温度与研磨过程中监测到的研磨垫的表面温度的差值,为了便于描述的一致性,此处同样将研磨垫表面的初始研磨温度记为T4,将研磨过程中监测到的研磨垫的表面温度记为T3。预设阈值为所能容忍的研磨垫的表面温度变化的最大值,在研磨垫的表面温度变化值T4-T3超过预设阈值时,说明此时研磨垫的表面温度有较大变化,变化后的研磨垫的表面温度较低,影响样品的研磨效果,为了提高研磨的效果,需要及时提高研磨垫的表面温度至初始研磨温度。在研磨垫的表面温度变化值T4-T3低于预设阈值时,说明此时研磨垫的表面温度变化较小,且变化范围在允许的范围内,可以继续进行研磨工艺,无需进行其他的操作。本实施例中,预设阈值可以根据各道工艺中的实际情况确定,例如在对研磨工艺要求不高的工艺过程中,可以选择较大的阈值,在对研磨工艺要求较高的工艺过程中,可以选择较小的阈值。In the examples of the present application, the surface temperature change value of the polishing pad is the difference between the initial polishing temperature of the polishing pad surface set and the surface temperature of the polishing pad monitored during the polishing process. The initial polishing temperature of the surface of the polishing pad is denoted as T 4 , and the surface temperature of the polishing pad monitored during polishing is denoted as T 3 . The preset threshold is the maximum value of the surface temperature change of the polishing pad that can be tolerated. When the surface temperature change value of the polishing pad T 4 -T 3 exceeds the preset threshold value, it means that the surface temperature of the polishing pad has changed greatly at this time. The surface temperature of the changed polishing pad is lower, which affects the polishing effect of the sample. In order to improve the polishing effect, it is necessary to increase the surface temperature of the polishing pad to the initial polishing temperature in time. When the surface temperature change value T 4 -T 3 of the polishing pad is lower than the preset threshold, it means that the surface temperature change of the polishing pad is small at this time, and the variation range is within the allowable range, and the polishing process can be continued without any other operation. In this embodiment, the preset threshold can be determined according to the actual situation in each process. For example, in a process that does not require high grinding technology, a larger threshold can be selected, and in a process that requires high grinding technology , you can choose a smaller threshold.
本实施例中,可以通过研磨控片使得研磨垫的表面温度达到研磨样品的最佳温度,具体的,可以在研磨控片的过程中实时监测研磨垫的表面温度,在研磨垫的表面温度达到研磨样品的初始研磨温度即最佳温度时停止研磨控片,从而提高化学机械研磨制程的稳定性,提高研磨的效果,减小重新研磨样品的概率。本实施例中,在研磨控片的过程中可以在将一片控片消耗完后再进行下一控片的研磨,也可以在将一片控片消耗部分后便进行下一控片的研磨,控片可以为相同的控片,也可以为不同的控片。In this embodiment, the surface temperature of the polishing pad can reach the optimum temperature of the grinding sample by grinding the control sheet. Specifically, the surface temperature of the polishing pad can be monitored in real time during the process of grinding the control sheet. The initial grinding temperature of the grinding sample is the optimum temperature to stop grinding the control sheet, thereby improving the stability of the chemical mechanical grinding process, improving the grinding effect, and reducing the probability of regrinding the sample. In this embodiment, in the process of grinding the control film, the grinding of the next control film may be performed after one control film is consumed, or the next control film may be ground after a portion of the control film is consumed. The films can be the same control film or different control films.
以上对本申请实施例的研磨垫温度控制方法进行了详细的描述,此外,本申请还提供了一种研磨垫温度控制装置,包括:The above describes the polishing pad temperature control method in the embodiment of the present application in detail. In addition, the present application also provides a polishing pad temperature control device, including:
温度设置单元,用于在研磨样品之前将研磨垫的表面温度设置为初始研磨温度;A temperature setting unit for setting the surface temperature of the polishing pad as the initial grinding temperature before grinding the sample;
温度监测单元,用于在研磨的过程中监测研磨垫的表面温度;The temperature monitoring unit is used to monitor the surface temperature of the polishing pad during the grinding process;
温度调节单元,用于在所述研磨垫的表面温度变化值超过预设阈值时,调节研磨垫的表面温度至所述初始研磨温度。The temperature adjustment unit is configured to adjust the surface temperature of the polishing pad to the initial polishing temperature when the surface temperature change value of the polishing pad exceeds a preset threshold.
可选的,温度调节单元具体用于通过研磨控片且在研磨控片的过程中监测研磨垫的表面温度,直至所述研磨垫的表面温度达到所述初始研磨温度。Optionally, the temperature adjustment unit is specifically configured to monitor the surface temperature of the polishing pad by grinding the control sheet and monitor the surface temperature of the polishing pad until the surface temperature of the polishing pad reaches the initial grinding temperature.
本实施例中,在研磨的过程中,温度监测单元可以实时监测研磨垫的表面温度,在研磨垫的温度变化值超过预设阈值时,温度调节单元可以通过研磨控片且在研磨控片的过程中实时监测研磨垫的表面温度,在研磨垫的表面温度达到初始研磨温度时,停止研磨控片,从而提高研磨的效率和效果。In this embodiment, during the grinding process, the temperature monitoring unit can monitor the surface temperature of the grinding pad in real time. When the temperature change value of the grinding pad exceeds the preset threshold, the temperature adjustment unit can control the sheet by grinding and control the sheet during the grinding process. During the process, the surface temperature of the grinding pad is monitored in real time, and when the surface temperature of the grinding pad reaches the initial grinding temperature, the grinding control sheet is stopped, thereby improving the grinding efficiency and effect.
可选的,温度设置单元具体用于在研磨样品之前研磨控片,直至所述研磨垫的表面温度达到所述初始研磨温度。Optionally, the temperature setting unit is specifically configured to grind the control sheet before grinding the sample until the surface temperature of the grinding pad reaches the initial grinding temperature.
本实施例中,在研磨样品之前,温度控制单元可以通过研磨控片使得研磨垫的表面温度达到初始研磨温度,在研磨控片的过程中可以实时监测研磨垫的表面温度,在研磨垫的表面温度达到初始研磨温度时,停止研磨控片。也可以通过先确定达到初始研磨温度所需的控片的数量,而后研磨该相同数量的控片达到初始研磨温度。In this embodiment, before grinding the sample, the temperature control unit can make the surface temperature of the polishing pad reach the initial grinding temperature by grinding the control sheet. During the process of grinding the control sheet, the surface temperature of the polishing pad can be monitored in real time. When the temperature reaches the initial grinding temperature, stop grinding the control tablet. The initial grinding temperature can also be achieved by first determining the number of flakes required to reach the initial grinding temperature, and then grinding the same number of flakes.
可选的,还包括:Optionally, also include:
第一单元,所述第一单元用于设置承载区,所述承载区用于承载控片,以便研磨控片。A first unit, the first unit is used for setting a bearing area, and the bearing area is used for bearing the control sheet so as to grind the control sheet.
本实施例中,第一单元用于设置承载区,承载区中承载提高研磨垫的温度所需的控片,在研磨控片的过程中能够及时提供控片,便于研磨工艺的进行,提高研磨效率。在具体的实施例中,第一单元可以靠近研磨垫,从而便于控片的研磨。In this embodiment, the first unit is used to set a bearing area, the bearing area carries the control sheet required to increase the temperature of the polishing pad, and the control sheet can be provided in time during the process of grinding the control sheet, which is convenient for the grinding process and improves the grinding efficiency. efficiency. In a specific embodiment, the first unit may be close to the polishing pad, thereby facilitating the polishing of the control sheet.
此外,本申请实施例还提供了一种研磨设备,参考图2所示,包括:研磨平台、研磨垫100以及研磨头200,研磨垫100设于研磨平台上,研磨头200设置于研磨垫100上,还包括:上述的研磨垫温度控制装置。In addition, the embodiment of the present application also provides a polishing apparatus, as shown in FIG. 2 , including: a polishing platform, a
本申请实施例中,研磨平台为用于承载研磨头200施加的压力的部件,也可以称为压盘,研磨平台上设置有研磨垫100,研磨垫100用以研磨样品,研磨头200与研磨垫100之间即为待研磨的样品,例如可以为晶片。In the embodiment of the present application, the grinding platform is a component used to carry the pressure exerted by the grinding
本说明书中的各个实施例均采用递进的方式描述,各个实施例之间相同相似的部分互相参见即可,每个实施例重点说明的都是与其它实施例的不同之处。尤其,对于装置实施例以及研磨设备实施例而言,由于其基本相似于方法实施例,所以描述得比较简单,相关之处参见方法实施例的部分说明即可。Each embodiment in this specification is described in a progressive manner, and the same and similar parts between the various embodiments may be referred to each other, and each embodiment focuses on the differences from other embodiments. Especially, for the apparatus embodiment and the grinding apparatus embodiment, since they are basically similar to the method embodiment, the description is relatively simple, and the relevant part can be referred to the partial description of the method embodiment.
以上所述仅是本发明的优选实施方式,虽然本发明已以较佳实施例披露如上,然而并非用以限定本发明。任何熟悉本领域的技术人员,在不脱离本发明技术方案范围情况下,都可利用上述揭示的方法和技术内容对本发明技术方案做出许多可能的变动和修饰,或修改为等同变化的等效实施例。因此,凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所做的任何的简单修改、等同变化及修饰,均仍属于本发明技术方案保护的范围内。The above descriptions are only preferred embodiments of the present invention. Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art, without departing from the scope of the technical solution of the present invention, can make many possible changes and modifications to the technical solution of the present invention by using the methods and technical contents disclosed above, or modify them into equivalents of equivalent changes. Example. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments according to the technical essence of the present invention without departing from the content of the technical solutions of the present invention still fall within the protection scope of the technical solutions of the present invention.
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Application publication date: 20200818 |