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CN111505896A - Mask plate, display substrate, preparation method of display substrate and display device - Google Patents

Mask plate, display substrate, preparation method of display substrate and display device Download PDF

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Publication number
CN111505896A
CN111505896A CN202010332826.3A CN202010332826A CN111505896A CN 111505896 A CN111505896 A CN 111505896A CN 202010332826 A CN202010332826 A CN 202010332826A CN 111505896 A CN111505896 A CN 111505896A
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light
area
slope
transmitting
layer
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岳斌
黄晓丽
孟庆阳
胡德莹
曾振助
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BOE Technology Group Co Ltd
Mianyang BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Mianyang BOE Optoelectronics Technology Co Ltd
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01Manufacture or treatment
    • H10D86/021Manufacture or treatment of multiple TFTs
    • H10D86/0231Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本发明提供一种掩膜板,用于对光敏材料层进行曝光,所述光敏材料层包括待去除区域、待保留区域和连接在所述待去除区域与所述待保留区域之间的斜坡形成区域,所述掩膜板包括与所述待去除区域对应的透光区域和位于所述透光区域之外的遮光区域,其中,所述遮光区域中设置有遮光层,所述遮光层上设置有与所述斜坡形成区域对应的光衍射图形,所述光衍射图形用于在曝光时使光线衍射,以使所述光敏材料层在完成曝光和显影后,在所述斜坡形成区域形成坡度角小于或等于30°的斜坡面。本发明还提供一种显示基板及其制备方法、显示装置。本发明可以使斜坡面的坡度角更佳平缓,有利于提高产品良率。

Figure 202010332826

The invention provides a mask for exposing a photosensitive material layer, the photosensitive material layer includes a to-be-removed area, a to-be-retained area, and a slope formed between the to-be-removed area and the to-be-reserved area The mask plate includes a light-transmitting area corresponding to the to-be-removed area and a light-shielding area located outside the light-transmitting area, wherein a light-shielding layer is provided in the light-shielding area, and a light-shielding layer is provided on the light-shielding layer. There is a light diffraction pattern corresponding to the slope forming area, and the light diffraction pattern is used to diffract light during exposure, so that the photosensitive material layer forms a slope angle in the slope forming area after exposure and development are completed Slopes less than or equal to 30°. The present invention also provides a display substrate, a preparation method thereof, and a display device. The invention can make the slope angle of the slope surface more gentle, which is beneficial to improve the product yield.

Figure 202010332826

Description

掩膜板、显示基板及其制备方法、显示装置Mask plate, display substrate and preparation method thereof, and display device

技术领域technical field

本发明涉及显示技术领域,具体涉及一种掩膜板、显示基板及其制备方法、显示装置。The invention relates to the field of display technology, in particular to a mask plate, a display substrate, a preparation method thereof, and a display device.

背景技术Background technique

在有机电致(Organic Light-Emitting Diode,OLED)显示领域,对于一些膜层而言,其侧面的坡度角越小,越有利于提高产品的良率,例如,当像素界定层中用于蒸镀有机发光材料的像素开口的侧面的坡度角越小时,对有机发光材料均匀沉积越有利,从而提高像素开口中形成的发光层的均匀性。In the field of Organic Light-Emitting Diode (OLED) displays, for some film layers, the smaller the slope angle of the side surface is, the better the yield of products is improved. For example, when the pixel definition layer is used for evaporation The smaller the slope angle of the side surface of the pixel opening coated with the organic light-emitting material, the more favorable it is for the uniform deposition of the organic light-emitting material, thereby improving the uniformity of the light-emitting layer formed in the pixel opening.

目前,可以通过调整工艺过程参数以使侧面的坡度角减小,但是,也仅能将侧面的坡度角减小至40°,若想将侧面的坡度角进一步减小,仅通过调整工艺过程参数则难以实现。因此,亟待一种更有效的方法将侧面的坡度角进一步减小。At present, the slope angle of the side can be reduced by adjusting the process parameters, however, the slope angle of the side can only be reduced to 40°. If you want to further reduce the slope angle of the side, only by adjusting the process parameters is difficult to achieve. Therefore, a more effective method is urgently needed to further reduce the slope angle of the side.

发明内容SUMMARY OF THE INVENTION

本发明旨在至少解决现有技术中存在的技术问题之一,提出了一种掩膜板、显示基板及其制备方法、显示装置。The present invention aims to solve at least one of the technical problems existing in the prior art, and provides a mask plate, a display substrate, a preparation method thereof, and a display device.

为了实现上述目的,本发明提供一种掩膜板,用于对光敏材料层进行曝光,所述光敏材料层包括待去除区域、待保留区域和连接在所述待去除区域与所述待保留区域之间的斜坡形成区域,所述掩膜板包括与所述待去除区域对应的透光区域和位于所述透光区域之外的遮光区域,其中,In order to achieve the above object, the present invention provides a mask for exposing a photosensitive material layer, the photosensitive material layer includes a to-be-removed area, a to-be-retained area, and a mask connected to the to-be-removed area and the to-be-reserved area A slope forming area between the mask plate includes a light-transmitting area corresponding to the to-be-removed area and a light-shielding area located outside the light-transmitting area, wherein,

所述遮光区域中设置有遮光层,所述遮光层上设置有与所述斜坡形成区域对应的光衍射图形,所述光衍射图形用于在曝光时使光线衍射,以使所述光敏材料层在完成曝光和显影后,在所述斜坡形成区域形成坡度角小于或等于30°的斜坡面。A light-shielding layer is arranged in the light-shielding area, and a light-diffraction pattern corresponding to the slope forming area is arranged on the light-shielding layer, and the light-diffraction pattern is used for diffracting light during exposure, so as to make the photosensitive material layer After exposure and development are completed, a slope surface with a slope angle of less than or equal to 30° is formed in the slope forming region.

可选地,所述透光区域与显示基板的像素单元一一对应,所述光衍射图形包括至少一个狭缝,所述狭缝为环绕所述透光区域的环状结构。Optionally, the light-transmitting regions are in one-to-one correspondence with the pixel units of the display substrate, the light diffraction pattern includes at least one slit, and the slit is a ring-shaped structure surrounding the light-transmitting region.

可选地,所述狭缝的宽度不大于所述狭缝与所述透光区域之间的间隔宽度。Optionally, the width of the slit is not greater than the width of the interval between the slit and the light-transmitting area.

可选地,所述狭缝与所述透光区域之间的间隔宽度在0.6μm至1.8μm之间,所述狭缝的宽度在0.6μm至1.8μm之间。Optionally, the width of the interval between the slit and the light-transmitting region is between 0.6 μm and 1.8 μm, and the width of the slit is between 0.6 μm and 1.8 μm.

可选地,所述透光区域与显示基板的像素单元一一对应,所述光衍射图形包括多个间隔的透光图案,多个所述透光图案环绕所述透光区域设置,且与所述透光区域无间隔。Optionally, the light-transmitting regions correspond to the pixel units of the display substrate one-to-one, the light diffraction pattern includes a plurality of spaced light-transmitting patterns, and a plurality of the light-transmitting patterns are arranged around the light-transmitting region, and correspond to the light-transmitting regions. The light-transmitting area has no space.

可选地,所述透光图案为矩形或三角形。Optionally, the light-transmitting pattern is rectangular or triangular.

可选地,所述掩膜板还包括透明基底,所述遮光层设置在所述透明基底上。Optionally, the mask plate further includes a transparent substrate, and the light shielding layer is disposed on the transparent substrate.

本发明还提供一种显示基板的制备方法,包括:The present invention also provides a method for preparing a display substrate, comprising:

在衬底上形成光敏材料层,所述光敏材料层包括待去除区域、待保留区域和连接在所述待去除区域与所述待保留区域之间的斜坡形成区域;forming a photosensitive material layer on the substrate, the photosensitive material layer comprising a region to be removed, a region to be retained, and a slope forming region connected between the region to be removed and the region to be retained;

利用上述的掩膜板对所述光敏材料层进行构图工艺,以使光敏材料层对应于所述待去除区域的部分被去除,对应于所述待保留区域的部分被保留,对应于所述斜坡形成区域的部分形成斜坡面,所述斜坡面的坡度角小于或等于30°。The photosensitive material layer is patterned by using the above-mentioned mask, so that the part of the photosensitive material layer corresponding to the to-be-removed area is removed, the part corresponding to the to-be-retained area is retained, and the part corresponding to the slope The portion forming the area forms a slope surface, the slope angle of which is less than or equal to 30°.

本发明还提供一种显示基板,其中,包括衬底和设置在所述衬底上的光敏图形层,所述光敏图形层具有朝向所述衬底的底面、远离所述衬底的顶面和连接在所述顶面与所述底面之间的侧面,所述侧面为斜坡面,所述斜坡面的坡度角小于或等于30°。The present invention also provides a display substrate, comprising a substrate and a photosensitive pattern layer disposed on the substrate, the photosensitive pattern layer having a bottom surface facing the substrate, a top surface away from the substrate, and The side surface connected between the top surface and the bottom surface is a slope surface, and the slope angle of the slope surface is less than or equal to 30°.

可选地,所述斜坡面的坡度角小于20°。Optionally, the slope angle of the slope surface is less than 20°.

本发明还提供一种显示装置,包括上述的显示基板。The present invention also provides a display device comprising the above-mentioned display substrate.

附图说明Description of drawings

附图是用来提供对本发明的进一步理解,并且构成说明书的一部分,与下面的具体实施方式一起用于解释本发明,但并不构成对本发明的限制。在附图中:The accompanying drawings are used to provide a further understanding of the present invention, and constitute a part of the specification, and together with the following specific embodiments, are used to explain the present invention, but do not constitute a limitation to the present invention. In the attached image:

图1为本发明实施例提供的掩膜板的结构示意图之一;FIG. 1 is one of the structural schematic diagrams of a mask plate provided by an embodiment of the present invention;

图2为本发明实施例提供的掩膜板的结构示意图之二;FIG. 2 is a second schematic structural diagram of a mask plate provided by an embodiment of the present invention;

图3a为本发明实施例提供的衍射图案的结构示意图之一;3a is one of the schematic structural diagrams of the diffraction pattern provided by the embodiment of the present invention;

图3b为本发明实施例提供的衍射图案的结构示意图之二;3b is a second schematic structural diagram of a diffraction pattern provided by an embodiment of the present invention;

图3c为本发明实施例提供的衍射图案的结构示意图之三;3c is a third schematic structural diagram of a diffraction pattern provided by an embodiment of the present invention;

图3d为本发明实施例提供的衍射图案的结构示意图之四;3d is a fourth schematic structural diagram of a diffraction pattern provided by an embodiment of the present invention;

图4为图3a沿剖线CC’的纵剖图;Fig. 4 is the longitudinal sectional view along section line CC' of Fig. 3a;

图5a为本发明实施例提供的不同宽度的狭缝所形成的像素开口的形貌示意图之一;5a is one of the topographical schematic diagrams of pixel openings formed by slits of different widths according to an embodiment of the present invention;

图5b为本发明实施例提供的不同宽度的狭缝所形成的像素开口的形貌示意图之二;5b is the second schematic diagram of the topography of pixel openings formed by slits of different widths according to an embodiment of the present invention;

图6为本发明实施例提供的制备方法的流程图;6 is a flowchart of a preparation method provided in an embodiment of the present invention;

图7为本发明实施例提供的显示基板的结构示意图。FIG. 7 is a schematic structural diagram of a display substrate provided by an embodiment of the present invention.

具体实施方式Detailed ways

以下结合附图对本发明的具体实施方式进行详细说明。应当理解的是,此处所描述的具体实施方式仅用于说明和解释本发明,并不用于限制本发明。The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present invention, but not to limit the present invention.

除非另作定义,本发明实施例使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本发明中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。同样,“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接,而是可以包括电性的连接,不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系,当被描述对象的绝对位置改变后,则该相对位置关系也可能相应地改变。Unless otherwise defined, the technical or scientific terms used in the embodiments of the present invention shall have the usual meanings understood by those with ordinary skill in the art to which the present invention belongs. The terms "first," "second," and similar terms used herein do not denote any order, quantity, or importance, but are merely used to distinguish different components. Likewise, words like "comprising" or "comprising" mean that the elements or things appearing before the word encompass the elements or things recited after the word and their equivalents, but do not exclude other elements or things. Words like "connected" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "Down", "Left", "Right", etc. are only used to represent the relative positional relationship, and when the absolute position of the described object changes, the relative positional relationship may also change accordingly.

本发明实施例提供一种掩膜板,用于对光敏材料层进行曝光,光敏材料层包括待去除区域、待保留区域和连接在待去除区域与待保留区域之间的斜坡形成区域。图1为本发明实施例提供的掩膜板的结构示意图之一,如图1所示,该掩膜板包括与待去除区域对应的透光区域A和位于透光区域A之外的遮光区域B,遮光区域B中设置有遮光层1,遮光层1上设置有与斜坡形成区域对应的光衍射图形2,光衍射图形2用于在曝光时使光线衍射,以使光敏材料层在完成曝光和显影后,在斜坡形成区域形成坡度角小于或等于30°的斜坡面。Embodiments of the present invention provide a mask for exposing a photosensitive material layer, where the photosensitive material layer includes a to-be-removed area, a to-be-reserved area, and a slope forming area connected between the to-be-removed area and the to-be-reserved area. FIG. 1 is a schematic structural diagram of a mask provided by an embodiment of the present invention. As shown in FIG. 1 , the mask includes a light-transmitting area A corresponding to the area to be removed and a light-shielding area located outside the light-transmitting area A B, a light-shielding layer 1 is arranged in the light-shielding area B, and a light-diffraction pattern 2 corresponding to the slope-forming area is arranged on the light-shielding layer 1. The light-diffraction pattern 2 is used to diffract light during exposure, so that the photosensitive material layer is exposed to After and development, a slope surface with a slope angle of less than or equal to 30° is formed in the slope forming area.

在本发明实施例中,光敏材料层的材料可以包括正性光阻材料,在进行曝光时,可以使透光区域A位于光敏材料层的待去除区域的上方,遮光区域B位于光敏材料层的待保留区域的上方,光衍射图形2位于光敏材料层的斜坡形成区域的上方。由于遮光区域B中设置有遮光层1,遮光层1对光线进行遮挡,因此,光线只能经过透光区域A和光衍射图形2射出,其中,光衍射图形2使入射的光线发生衍射,并使衍射后的光线照射至光敏材料层的斜坡形成区域,从而使斜坡形成区域的光敏材料层接收到少量光线,从而发生部分变性。在本发明实施例中,可以根据实际需要,预先设置好光衍射图形2的尺寸和位置(例如光衍射图形2为狭缝时,光衍射图形2的尺寸可以是指狭缝的宽度),以使光敏材料层在经过曝光显影等构图工艺后,在斜坡形成区域形成坡度角小于或等于30°的斜坡面。In this embodiment of the present invention, the material of the photosensitive material layer may include a positive photoresist material. During exposure, the light-transmitting area A may be located above the to-be-removed area of the photosensitive material layer, and the light-shielding area B may be located above the photosensitive material layer. Above the area to be reserved, the light diffraction pattern 2 is located above the slope forming area of the photosensitive material layer. Since the light-shielding layer 1 is arranged in the light-shielding area B, the light-shielding layer 1 shields the light, so the light can only be emitted through the light-transmitting area A and the light diffraction pattern 2, wherein the light diffraction pattern 2 diffracts the incident light and makes the incident light diffract. The diffracted light irradiates the slope forming region of the photosensitive material layer, so that the photosensitive material layer in the slope forming region receives a small amount of light, thereby causing partial denaturation. In this embodiment of the present invention, the size and position of the light diffraction pattern 2 may be preset according to actual needs (for example, when the light diffraction pattern 2 is a slit, the size of the light diffraction pattern 2 may refer to the width of the slit), so that After the photosensitive material layer is subjected to a patterning process such as exposure and development, a slope surface with a slope angle of less than or equal to 30° is formed in the slope forming region.

采用本发明实施例提供的掩膜板对光敏材料层进行构图工艺后,可以在光敏材料层的斜坡形成区域形成坡度角小于或等于30°的斜坡面,该斜坡面有利于提高产品的良率,例如,以该斜坡面作为像素开口的侧面可以提高发光材料沉积的均匀性,或者,较平缓的斜坡面可以有效改善段差带来的膜层断裂或模印等问题。After the photosensitive material layer is patterned using the mask provided in the embodiment of the present invention, a slope surface with a slope angle less than or equal to 30° can be formed in the slope formation region of the photosensitive material layer, and the slope surface is conducive to improving the yield of products For example, using the slope surface as the side of the pixel opening can improve the uniformity of the deposition of the luminescent material, or a gentler slope surface can effectively improve the problems such as film breakage or stamping caused by the step difference.

在一些具体实施例中,掩膜板可以用于对像素界定材料层进行曝光,以形成具有多个像素开口的像素界定层,下面以用于对像素界定层进行曝光的掩膜板为例,对本发明实施例提供的掩膜板进行详细介绍,具体地,图2为本发明实施例提供的掩膜板的结构示意图之二,图3a为本发明实施例提供的衍射图案的结构示意图之一,图4为图3a沿剖线CC’的纵剖图,结合图2、图3a和图4所示,该掩膜板包括:多个透光区域A和遮光区域B。透光区域A与显示基板的像素单元一一对应,遮光区域B将多个透光区域A彼此间隔开,光衍射图形2包括至少一个狭缝21,狭缝21为环绕相应的透光区域A的环状结构。In some specific embodiments, a mask can be used to expose the pixel-defining material layer to form a pixel-defining layer having a plurality of pixel openings. The following takes the mask for exposing the pixel-defining layer as an example, The mask provided by the embodiment of the present invention is introduced in detail. Specifically, FIG. 2 is the second schematic diagram of the structure of the mask provided by the embodiment of the present invention, and FIG. 3a is the one of the schematic structural diagrams of the diffraction pattern provided by the embodiment of the present invention. 4 is a longitudinal cross-sectional view of FIG. 3a along the section line CC', combined with FIG. 2, FIG. 3a and FIG. The light-transmitting area A corresponds to the pixel units of the display substrate one-to-one, the light-shielding area B separates a plurality of light-transmitting areas A from each other, and the light diffraction pattern 2 includes at least one slit 21, and the slit 21 surrounds the corresponding light-transmitting area A. the ring structure.

在本发明实施例中,可以使狭缝21位于像素界定材料层上用于形成像素开口的侧面的位置的上方。狭缝21使入射的光线发生衍射,并使衍射后的光线照射至像素界定材料层上对应于像素开口的侧面的位置。在经过曝光之后,再对像素界定材料层进行显影即可得到具有多个像素开口的像素界定层。在本发明实施例中,狭缝21为连续的环状结构,从而可以使像素开口各个方向上的侧面的坡度角均减小,进一步提高发光材料沉积的均匀性。如图4所示,在一些具体实施例中,掩膜板还包括透明基底3,遮光层1设置在透明基底3上。其中,透明基底3的材料包括石英玻璃,遮光层1的材料包括铬。在本发明实施例中,可以通过溅射的方式在透明基底3上形成铬材料层,之后,再对铬材料层进行刻蚀,以在铬材料层对应于透光区域A的位置形成开口,以及在透光区域A的外围形成狭缝21,从而得到遮光层1。采用上述方式制备的掩膜板工艺简单,有利于节约生产成本。In the embodiment of the present invention, the slit 21 may be located above the position of the side surface of the pixel defining material layer for forming the pixel opening. The slit 21 diffracts the incident light, and makes the diffracted light irradiate to a position on the pixel defining material layer corresponding to the side surface of the pixel opening. After exposure, the pixel defining material layer is developed to obtain a pixel defining layer having a plurality of pixel openings. In the embodiment of the present invention, the slit 21 is a continuous annular structure, so that the slope angles of the sides of the pixel opening in all directions can be reduced, and the uniformity of the deposition of the luminescent material can be further improved. As shown in FIG. 4 , in some specific embodiments, the mask plate further includes a transparent substrate 3 , and the light shielding layer 1 is disposed on the transparent substrate 3 . The material of the transparent substrate 3 includes quartz glass, and the material of the light shielding layer 1 includes chrome. In the embodiment of the present invention, a chromium material layer can be formed on the transparent substrate 3 by sputtering, and then the chromium material layer is etched to form an opening at a position of the chromium material layer corresponding to the light-transmitting area A, And the slits 21 are formed on the periphery of the light-transmitting area A, so as to obtain the light-shielding layer 1 . The mask plate prepared by the above method is simple in process, which is beneficial to saving production cost.

在一些具体实施例中,狭缝21的宽度不大于狭缝21与透光区域A之间的间隔宽度。具体地,如图4所示,在本发明实施例中,间隔宽度a为狭缝21的内侧边与透光区域A的外侧边之间的距离,狭缝21的宽度b为狭缝21的内侧边与狭缝21的外侧边之间的距离。图5a为本发明实施例提供的不同宽度的狭缝所形成的像素开口的形貌示意图之一,如图5a所示,像素界定层42形成在衬底41上,坡度角为像素开口的侧面与衬底41之间的夹角,狭缝21与透光区域A之间的间隔宽度a为1.3μm,沿图5a中从左至右的方向,狭缝21的宽度b依次为1.0μm、1.5μm、2.0μm、2.5μm和3.0μm,像素开口的左侧侧面的坡度角依次为24.4°、21.0°、25.8°、32.7°和34.1°,像素开口的右侧侧面的坡度角依次为28.6°、14.5°、14.7°、33.7°和33.7°。随着狭缝21的宽度b的增大,衍射现象逐渐减弱,当狭缝21的宽度b大于狭缝21与透光区域A之间的间隔宽度a时,可以明显看出像素开口中出现残余的像素界定材料,进而影响发光材料在像素开口中的蒸镀。在本发明实施例中,通过使狭缝21的宽度b不大于狭缝21与透光区域A之间的间隔宽度a,可以改善上述问题。In some specific embodiments, the width of the slit 21 is not greater than the width of the interval between the slit 21 and the light-transmitting area A. Specifically, as shown in FIG. 4 , in the embodiment of the present invention, the interval width a is the distance between the inner side of the slit 21 and the outer side of the light-transmitting area A, and the width b of the slit 21 is the slit The distance between the inner side of 21 and the outer side of slit 21 . FIG. 5a is one of the topographical schematic diagrams of pixel openings formed by slits of different widths according to an embodiment of the present invention. As shown in FIG. 5a, the pixel defining layer 42 is formed on the substrate 41, and the slope angle is the side surface of the pixel opening. The included angle with the substrate 41, the interval width a between the slit 21 and the light-transmitting area A is 1.3 μm, and along the direction from left to right in FIG. 5a, the width b of the slit 21 is 1.0 μm, 1.5μm, 2.0μm, 2.5μm and 3.0μm, the slope angle of the left side of the pixel opening is 24.4°, 21.0°, 25.8°, 32.7° and 34.1°, and the slope angle of the right side of the pixel opening is 28.6° °, 14.5°, 14.7°, 33.7° and 33.7°. As the width b of the slit 21 increases, the diffraction phenomenon gradually weakens. When the width b of the slit 21 is greater than the width a of the interval between the slit 21 and the light-transmitting area A, it can be clearly seen that there is residual in the pixel opening. The pixel-defining material of the luminescent material in turn affects the evaporation of the luminescent material in the pixel opening. In the embodiment of the present invention, by making the width b of the slit 21 not greater than the interval width a between the slit 21 and the light-transmitting area A, the above problems can be improved.

在一些具体实施例中,通过调整上述的狭缝21的宽度b和狭缝21与透光区域A之间的间隔宽度a,还可以使像素开口的侧面的坡度角减小至20°以下,从而使像素开口更有利于发光材料的均匀蒸镀,进一步提高像素开口中发光层的厚度均匀性。In some specific embodiments, by adjusting the width b of the slit 21 and the interval width a between the slit 21 and the light-transmitting area A, the slope angle of the side surface of the pixel opening can also be reduced to less than 20°, Therefore, the pixel opening is more conducive to the uniform evaporation of the light-emitting material, and the thickness uniformity of the light-emitting layer in the pixel opening is further improved.

在一些具体实施例中,狭缝21与透光区域A之间的间隔宽度a在0.6μm至1.8μm之间,狭缝21的宽度b在0.6μm至1.8μm之间。图5b为本发明实施例提供的不同宽度的狭缝所形成的像素开口的形貌示意图之二,如图5b所示,像素界定层42形成在衬底41上,坡度角为像素开口的侧面与衬底41之间的夹角,间隔宽度a为2.2μm,沿图5b中从左至右的方向,狭缝21的宽度b依次为1.0μm、1.5μm、2.0μm、2.5μm和3.0μm,像素开口的左侧侧面的坡度角依次为32.0°、36.2°、39.6°、38.7°和41.3°,像素开口的右侧侧面的坡度角依次为36.3°、35.3°、39.8°、39.6°和39.2°。相较于图5a最左侧的像素开口的形貌,图5b中最左侧的像素开口的形貌的狭缝21与透光区域A之间的间隔宽度a较大,像素开口的侧面的表面出现起伏不平,并且,随着狭缝21的宽度b逐渐增大,像素开口中出现残余的素界定材料相较于图5a中更多。因此,在本发明实施例中,通过使狭缝21与透光区域A之间的间隔宽度a在0.6μm至1.8μm之间,狭缝21的宽度b在0.6μm至1.8μm之间,可以防止像素开口的侧面的表面出现起伏不平,同时避免像素开口中出现残余的素界定材料,提高像素开口中发光层的厚度均匀性。In some specific embodiments, the interval width a between the slit 21 and the light-transmitting area A is between 0.6 μm and 1.8 μm, and the width b of the slit 21 is between 0.6 μm and 1.8 μm. FIG. 5b is the second schematic diagram of the topography of pixel openings formed by slits of different widths according to an embodiment of the present invention. As shown in FIG. 5b, the pixel defining layer 42 is formed on the substrate 41, and the slope angle is the side surface of the pixel opening. The included angle with the substrate 41, the interval width a is 2.2 μm, and along the direction from left to right in FIG. 5b, the width b of the slit 21 is 1.0 μm, 1.5 μm, 2.0 μm, 2.5 μm and 3.0 μm in sequence , the slope angles of the left side of the pixel opening are 32.0°, 36.2°, 39.6°, 38.7° and 41.3°, and the slope angles of the right side of the pixel opening are 36.3°, 35.3°, 39.8°, 39.6° and 39.2°. Compared with the topography of the leftmost pixel opening in FIG. 5a, the gap width a between the slit 21 and the light transmission area A of the topography of the leftmost pixel opening in FIG. 5b is larger, and the side of the pixel opening is larger. Roughness appears on the surface, and as the width b of the slit 21 gradually increases, more residual pixel-defining material appears in the pixel opening than in FIG. 5a. Therefore, in the embodiment of the present invention, by setting the interval width a between the slit 21 and the light-transmitting area A to be between 0.6 μm and 1.8 μm, and the width b of the slit 21 to be between 0.6 μm and 1.8 μm, it is possible to The surface of the side surface of the pixel opening is prevented from being undulating, and at the same time, residual pixel-defining material is avoided in the pixel opening, and the thickness uniformity of the light-emitting layer in the pixel opening is improved.

图3b为本发明实施例提供的衍射图案的结构示意图之二,如图3b所示,在一些具体实施例中,光衍射图形2包括多个狭缝21,多个狭缝21的宽度b均相同,且多个狭缝21之间的距离也均相同,均等于最靠近透光区域A的狭缝21与透光区域A之间的间隔宽度a。在本发明实施例中,通过设置多个狭缝21,可以进一步减小像素开口的侧面的坡度角。FIG. 3b is the second schematic structural diagram of the diffraction pattern provided by the embodiment of the present invention. As shown in FIG. 3b, in some specific embodiments, the light diffraction pattern 2 includes a plurality of slits 21, and the width b of the plurality of slits 21 is equal to The same, and the distances between the plurality of slits 21 are also the same, which are equal to the interval width a between the slit 21 closest to the light-transmitting area A and the light-transmitting area A. In the embodiment of the present invention, by arranging a plurality of slits 21, the slope angle of the side surface of the pixel opening can be further reduced.

图3c为本发明实施例提供的衍射图案的结构示意图之三,图3d为本发明实施例提供的衍射图案的结构示意图之四,结合图3c和图3d所示,在一些具体实施例中,透光区域A与显示基板的像素单元一一对应,光衍射图形2包括多个间隔的透光图案22,多个透光图案22环绕透光区域A设置,其与透光区域A无间隔,从而形成边缘为锯齿状的结构。如图3c所示,透光图案22可以为矩形,如图3d所示,透光图案22可以为三角形。可以理解的是,在本发明实施例中,透光图案22还可以为其他形状,只要其可以使入射光发生衍射,并使衍射后的光线照射在斜坡形成区域,以使斜坡形成区域中形成坡度角小于或等于30°的斜坡面即可。FIG. 3c is a third schematic structural diagram of a diffraction pattern provided by an embodiment of the present invention, and FIG. 3d is a fourth schematic structural diagram of a diffraction pattern provided by an embodiment of the present invention. As shown in FIG. 3c and FIG. 3d, in some specific embodiments, The light-transmitting areas A correspond one-to-one with the pixel units of the display substrate. The light diffraction pattern 2 includes a plurality of spaced light-transmitting patterns 22 . Thus, a structure with jagged edges is formed. As shown in FIG. 3c, the light-transmitting pattern 22 may be rectangular, and as shown in FIG. 3d, the light-transmitting pattern 22 may be triangular. It can be understood that, in the embodiment of the present invention, the light-transmitting pattern 22 can also be in other shapes, as long as it can diffract the incident light, and make the diffracted light irradiate on the slope forming area, so that the slope forming area can be formed in the slope forming area. A slope surface with a slope angle less than or equal to 30° is sufficient.

需要说明的是,上述内容仅是以用于制备像素界定层的掩膜板为例进行解释说明的,在一些具体实施例中,掩膜板并不限定于用于制备像素界定层,还可以用于制备其他膜层,例如,本发明实施例的掩膜板可以用于制备AA区外围的堤坝等结构,甚至是用于制备无机层在刻蚀过程中所需的光刻胶,通过减小光刻胶的斜坡面的坡度角,有利于在后续的刻蚀工艺中,使制备的无机层的斜坡面的坡度角减缓。以本发明实施例的掩膜板用于制备形成环绕AA区的堤坝为例,堤坝具有背离衬底的顶面、朝向衬底的底面和连接在顶面和底面之间的侧面,堤坝顶面所在区域即为待保留区域,堤坝侧面所在区域即为斜坡形成区域,其他区域则为待去除区域。It should be noted that the above content is only explained by taking the mask used for preparing the pixel definition layer as an example. For preparing other film layers, for example, the mask of the embodiment of the present invention can be used to prepare structures such as dams around the AA area, and even to prepare the photoresist required for the etching process of the inorganic layer. The small slope angle of the slope surface of the photoresist is beneficial to slow down the slope angle of the slope surface of the prepared inorganic layer in the subsequent etching process. Taking the mask plate according to the embodiment of the present invention for preparing a dam surrounding the AA area as an example, the dam has a top surface facing away from the substrate, a bottom surface facing the substrate, and a side surface connected between the top surface and the bottom surface, and the top surface of the dam has The area where it is located is the area to be reserved, the area where the side of the dam is located is the area where the slope is formed, and the other areas are the area to be removed.

本发明实施例还提供一种显示基板的制备方法,图6为本发明实施例提供的制备方法的流程图,如图6所示,该制备方法包括以下步骤:An embodiment of the present invention also provides a method for preparing a display substrate. FIG. 6 is a flowchart of the preparation method provided by an embodiment of the present invention. As shown in FIG. 6 , the preparation method includes the following steps:

S1、在衬底上形成光敏材料层;光敏材料层包括待去除区域、待保留区域和连接在待去除区域与待保留区域之间的斜坡形成区域;S1, forming a photosensitive material layer on the substrate; the photosensitive material layer includes a to-be-removed area, a to-be-retained area, and a slope forming area connected between the to-be-removed area and the to-be-reserved area;

S2、利用掩膜板对光敏材料层进行构图工艺,以使光敏材料层对应于待去除区域的部分被去除,对应于待保留区域的部分被保留,对应于斜坡形成区域的部分形成斜坡面,斜坡面的坡度角小于或等于30°;S2, using a mask to perform a patterning process on the photosensitive material layer, so that the part of the photosensitive material layer corresponding to the area to be removed is removed, the part corresponding to the area to be reserved is retained, and the part corresponding to the slope forming area forms a slope surface, The slope angle of the slope surface is less than or equal to 30°;

其中,掩膜板为上述的掩膜板。Wherein, the mask is the above-mentioned mask.

在本发明实施例中,光敏材料层的材料可以包括正性光阻材料,在进行曝光时,可以使掩膜板的透光区域位于光敏材料层的待去除区域的上方,遮光区域位于光敏材料层的待保留区域的上方,光衍射图形位于光敏材料层的斜坡形成区域的上方。由于掩膜板的遮光区域中设置有遮光层,遮光层对光线进行遮挡,因此,光线只能经过透光区域和光衍射图形射出,其中,光衍射图形使入射的光线发生衍射,并使衍射后的光线照射至光敏材料层的斜坡形成区域。在本发明实施例中,可以根据实际需要,预先设置好光衍射图形的尺寸和位置(例如光衍射图形为狭缝时,光衍射图形的尺寸可以是指狭缝的宽度)以使光敏材料层在经过曝光显影等构图工艺后,在斜坡形成区域形成坡度角小于或等于30°的斜坡面。In this embodiment of the present invention, the material of the photosensitive material layer may include a positive photoresist material. During exposure, the light-transmitting area of the mask may be located above the to-be-removed area of the photosensitive material layer, and the light-shielding area may be located on the photosensitive material. Above the to-be-retained area of the layer, the light diffraction pattern is located above the slope-forming area of the photosensitive material layer. Since a light-shielding layer is provided in the light-shielding area of the mask, the light-shielding layer shields the light, so the light can only be emitted through the light-transmitting area and the light diffraction pattern. The light is irradiated to the slope forming region of the photosensitive material layer. In this embodiment of the present invention, the size and position of the light diffraction pattern may be preset according to actual needs (for example, when the light diffraction pattern is a slit, the size of the light diffraction pattern may refer to the width of the slit) to make the photosensitive material layer After a patterning process such as exposure and development, a slope surface with a slope angle less than or equal to 30° is formed in the slope forming region.

采用本发明实施例提供的制备方法,其可以在光敏材料层的斜坡形成区域形成坡度角小于或等于30°的斜坡面,该斜坡面有利于提高产品的良率,例如,当像素开口的侧面为坡度角小于或等于30°的斜坡面时,可以提高发光材料沉积的均匀性;当然,其他膜层的侧面也可以设置为坡度角小于或等于30°的斜坡面,从而有效改善膜层段差而导致上方膜层断裂或模印等问题。Using the preparation method provided by the embodiment of the present invention, a slope surface with a slope angle of less than or equal to 30° can be formed in the slope formation region of the photosensitive material layer, and the slope surface is beneficial to improve the yield of the product. For example, when the side surface of the pixel opening is When the slope angle is less than or equal to 30°, the uniformity of the deposition of the luminescent material can be improved; of course, the sides of other film layers can also be set as the slope surface with the slope angle less than or equal to 30°, thereby effectively improving the film layer difference. This leads to problems such as cracking or stamping of the upper film layer.

本发明实施例还提供一种显示基板,该显示基板可以采用上述的制备方法制备得到,该显示基板尤其适用于有机电致发光(Organic Light-Emitting Diode,OLED)显示基板,图7为本发明实施例提供的显示基板的结构示意图,如图7所示,该显示基板包括:衬底51和设置在衬底51上的光敏图形层52,光敏图形层52具有朝向衬底51的底面、远离衬底51的顶面和连接在顶面与底面之间的侧面,侧面为斜坡面53,斜坡面53的坡度角小于或等于30°。An embodiment of the present invention further provides a display substrate, which can be prepared by the above-mentioned preparation method. The display substrate is especially suitable for an organic electroluminescence (Organic Light-Emitting Diode, OLED) display substrate. FIG. 7 shows the present invention. A schematic structural diagram of a display substrate provided by an embodiment, as shown in FIG. 7 , the display substrate includes: a substrate 51 and a photosensitive pattern layer 52 disposed on the substrate 51. The photosensitive pattern layer 52 has a bottom surface facing the substrate 51 and a The top surface of the substrate 51 and the side surfaces connected between the top surface and the bottom surface are slope surfaces 53, and the slope angle of the slope surfaces 53 is less than or equal to 30°.

具体地,显示基板可以划分为多个像素单元,显示基板还包括设置在每个像素单元中的发光单元和像素驱动电路,以及设置在各导电膜层之间的绝缘层(例如,位于薄膜晶体管的栅极和有源层之间的栅极绝缘层、位于薄膜晶体管的漏极与发光单元的阳极之间的平坦化层)等。像素驱动电路包括多个薄膜晶体管。其中,发光单元可以为底发光式结构,也可以采用顶发光式结构。其中,像素驱动电路位于像素界定层与衬底之间,发光单元包括相对设置的阳极和阴极、以及位于阳极和阴极之间的发光层,发光单元的阳极位于像素界定层与衬底之间,发光单元的发光层通过向像素开口蒸镀发光材料而形成。像素界定层的材料可以包括聚酰亚胺、聚酞亚胺、聚酞胺、丙烯酸树脂、苯并环丁烯或酚醛树脂等有机绝缘材料。Specifically, the display substrate can be divided into a plurality of pixel units, and the display substrate further includes a light-emitting unit and a pixel driving circuit arranged in each pixel unit, and an insulating layer (for example, a thin film transistor) arranged between the conductive film layers The gate insulating layer between the gate of the thin film transistor and the active layer, the planarization layer between the drain of the thin film transistor and the anode of the light-emitting unit), etc. The pixel driving circuit includes a plurality of thin film transistors. The light-emitting unit may be a bottom-emitting structure or a top-emitting structure. Wherein, the pixel driving circuit is located between the pixel defining layer and the substrate, the light emitting unit includes an anode and a cathode disposed oppositely, and a light emitting layer located between the anode and the cathode, and the anode of the light emitting unit is located between the pixel defining layer and the substrate, The light-emitting layer of the light-emitting unit is formed by evaporating a light-emitting material to the pixel opening. The material of the pixel defining layer may include organic insulating materials such as polyimide, polyphthalimide, polyphthalamide, acrylic resin, benzocyclobutene or phenolic resin.

本发明实施例提供的显示基板的斜坡面的坡度角小于或等于30°,有利于提高产品的良率,例如,当像素开口的侧面为坡度角小于或等于30°的斜坡面时,可以提高发光材料沉积的均匀性;当然,其他膜层的侧面也可以设置为坡度角小于或等于30°的斜坡面,从而有效改善段差而导致的上方膜层断裂或模印等问题。The slope angle of the slope surface of the display substrate provided by the embodiment of the present invention is less than or equal to 30°, which is beneficial to improve the yield of the product. Uniformity of luminescent material deposition; of course, the sides of other film layers can also be set to slope surfaces with a slope angle of less than or equal to 30°, so as to effectively improve the problems such as breakage or stamping of the upper film layer caused by step differences.

在一些具体实施例中,可以根据实际需要,预先设置好光衍射图形的尺寸和位置,以使斜坡面的坡度角小于20°,从而使该斜坡面更有利于提高产品的良率。In some specific embodiments, the size and position of the light diffraction pattern can be preset according to actual needs, so that the slope angle of the slope surface is less than 20°, so that the slope surface is more conducive to improving product yield.

在一些具体实施例中,光敏图形层可以为像素界定层,像素界定层具有多个像素开口,斜坡面为像素开口的侧面。In some specific embodiments, the photosensitive pattern layer may be a pixel definition layer, the pixel definition layer has a plurality of pixel openings, and the slope surface is a side surface of the pixel opening.

本发明实施例还提供一种显示装置,其中,包括上述的显示基板。An embodiment of the present invention further provides a display device, which includes the above-mentioned display substrate.

该显示装置可以为:电子纸、OLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。The display device can be any product or component with display function, such as electronic paper, OLED panel, mobile phone, tablet computer, TV, monitor, notebook computer, digital photo frame, and navigator.

该显示装置采用上述的显示基板,因此,其像素界定层上的像素开口的侧面的坡度角小于或等于30°,有利于提高产品的良率。The display device adopts the above-mentioned display substrate. Therefore, the slope angle of the side surface of the pixel opening on the pixel defining layer is less than or equal to 30°, which is beneficial to improve the yield of the product.

可以理解的是,以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式,然而本发明并不局限于此。对于本领域内的普通技术人员而言,在不脱离本发明的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本发明的保护范围。It can be understood that the above embodiments are only exemplary embodiments adopted to illustrate the principle of the present invention, but the present invention is not limited thereto. For those skilled in the art, without departing from the spirit and essence of the present invention, various modifications and improvements can be made, and these modifications and improvements are also regarded as the protection scope of the present invention.

Claims (12)

1.一种掩膜板,用于对光敏材料层进行曝光,所述光敏材料层包括待去除区域、待保留区域和连接在所述待去除区域与所述待保留区域之间的斜坡形成区域,所述掩膜板包括与所述待去除区域对应的透光区域和位于所述透光区域之外的遮光区域,其特征在于,1. A mask for exposing a photosensitive material layer, the photosensitive material layer comprising a to-be-removed area, a to-be-retained area, and a slope-forming area connected between the to-be-removed area and the to-be-retained area , the mask plate includes a light-transmitting area corresponding to the to-be-removed area and a light-shielding area located outside the light-transmitting area, characterized in that: 所述遮光区域中设置有遮光层,所述遮光层上设置有与所述斜坡形成区域对应的光衍射图形,所述光衍射图形用于在曝光时使光线衍射,以使所述光敏材料层在完成曝光和显影后,在所述斜坡形成区域形成坡度角小于或等于30°的斜坡面。A light-shielding layer is arranged in the light-shielding area, and a light-diffraction pattern corresponding to the slope forming area is arranged on the light-shielding layer, and the light-diffraction pattern is used for diffracting light during exposure, so as to make the photosensitive material layer After exposure and development are completed, a slope surface with a slope angle of less than or equal to 30° is formed in the slope forming region. 2.根据权利要求1所述的掩膜板,其特征在于,所述透光区域与显示基板的像素单元一一对应,所述光衍射图形包括至少一个狭缝,所述狭缝为环绕所述透光区域的环状结构。2 . The mask according to claim 1 , wherein the light-transmitting regions correspond to the pixel units of the display substrate one-to-one, and the light diffraction pattern comprises at least one slit, and the slit is a surrounding area. 3 . The annular structure of the light-transmitting region. 3.根据权利要求2所述的掩膜板,其特征在于,所述狭缝的宽度不大于所述狭缝与所述透光区域之间的间隔宽度。3 . The mask according to claim 2 , wherein the width of the slit is not greater than the width of the interval between the slit and the light-transmitting area. 4 . 4.根据权利要求2所述的掩膜板,其特征在于,所述狭缝与所述透光区域之间的间隔宽度在0.6μm至1.8μm之间,所述狭缝的宽度在0.6μm至1.8μm之间。4 . The mask according to claim 2 , wherein the width of the interval between the slit and the light-transmitting region is between 0.6 μm and 1.8 μm, and the width of the slit is 0.6 μm. 5 . to 1.8 μm. 5.根据权利要求1所述的掩膜板,其特征在于,所述透光区域与显示基板的像素单元一一对应,所述光衍射图形包括多个间隔的透光图案,多个所述透光图案环绕所述透光区域设置,且与所述透光区域无间隔。5 . The mask according to claim 1 , wherein the light-transmitting regions correspond to the pixel units of the display substrate one-to-one, the light diffraction pattern comprises a plurality of spaced light-transmitting patterns, and a plurality of the The light-transmitting pattern is arranged around the light-transmitting area and is not spaced from the light-transmitting area. 6.根据权利要求5所述的掩膜板,其特征在于,所述透光图案为矩形或三角形。6 . The mask according to claim 5 , wherein the light-transmitting pattern is a rectangle or a triangle. 7 . 7.根据权利要求1至6中任一项所述的掩膜板,其特征在于,所述掩膜板还包括透明基底,所述遮光层设置在所述透明基底上。7 . The mask according to claim 1 , wherein the mask further comprises a transparent substrate, and the light shielding layer is disposed on the transparent substrate. 8 . 8.一种显示基板的制备方法,其特征在于,包括:8. A method for preparing a display substrate, comprising: 在衬底上形成光敏材料层,所述光敏材料层包括待去除区域、待保留区域和连接在所述待去除区域与所述待保留区域之间的斜坡形成区域;forming a photosensitive material layer on the substrate, the photosensitive material layer comprising a region to be removed, a region to be retained, and a slope forming region connected between the region to be removed and the region to be retained; 利用权利要求1至7中任意一项所述的掩膜板对所述光敏材料层进行构图工艺,以使光敏材料层对应于所述待去除区域的部分被去除,对应于所述待保留区域的部分被保留,对应于所述斜坡形成区域的部分形成斜坡面,所述斜坡面的坡度角小于或等于30°。A patterning process is performed on the photosensitive material layer by using the mask according to any one of claims 1 to 7, so that the part of the photosensitive material layer corresponding to the to-be-removed area is removed, and the part corresponding to the to-be-retained area is removed. The portion of the slope is reserved, and the portion corresponding to the slope forming region forms a slope surface, and the slope angle of the slope surface is less than or equal to 30°. 9.一种显示基板,其特征在于,包括衬底和设置在所述衬底上的光敏图形层,所述光敏图形层具有朝向所述衬底的底面、远离所述衬底的顶面和连接在所述顶面与所述底面之间的侧面,所述侧面为斜坡面,所述斜坡面的坡度角小于或等于30°。9. A display substrate, characterized in that it comprises a substrate and a photosensitive graphic layer disposed on the substrate, the photosensitive graphic layer having a bottom surface facing the substrate, a top surface away from the substrate and The side surface connected between the top surface and the bottom surface is a slope surface, and the slope angle of the slope surface is less than or equal to 30°. 10.根据权利要求9所述的显示基板,其特征在于,所述斜坡面的坡度角小于20°。10 . The display substrate of claim 9 , wherein the slope angle of the slope surface is less than 20°. 11 . 11.根据权利要求9所述的显示基板,其特征在于,所述光敏图形层为像素界定层,所述像素界定层具有多个像素开口,所述斜坡面为像素开口的侧面。11 . The display substrate of claim 9 , wherein the photosensitive pattern layer is a pixel defining layer, the pixel defining layer has a plurality of pixel openings, and the slope surface is a side surface of the pixel opening. 12 . 12.一种显示装置,其特征在于,包括权利要求9至11中任一项所述的显示基板。12. A display device, comprising the display substrate according to any one of claims 9 to 11.
CN202010332826.3A 2020-04-24 2020-04-24 Mask plate, display substrate, preparation method of display substrate and display device Pending CN111505896A (en)

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