CN111498836A - Preparation method of nitrogen-doped reduced graphene oxide field emission cathode - Google Patents
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 100
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 74
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 25
- 239000010439 graphite Substances 0.000 claims abstract description 25
- 229920001661 Chitosan Polymers 0.000 claims abstract description 20
- 239000010453 quartz Substances 0.000 claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000001257 hydrogen Substances 0.000 claims abstract description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 239000006185 dispersion Substances 0.000 claims description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 238000006722 reduction reaction Methods 0.000 claims description 12
- 239000011230 binding agent Substances 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 239000012298 atmosphere Substances 0.000 claims description 7
- 239000001856 Ethyl cellulose Substances 0.000 claims description 6
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 6
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 6
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 229920001249 ethyl cellulose Polymers 0.000 claims description 6
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 6
- 229940116411 terpineol Drugs 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 150000002431 hydrogen Chemical class 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 5
- 238000012360 testing method Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
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- 125000004430 oxygen atom Chemical group O* 0.000 description 3
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- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000007833 carbon precursor Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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Abstract
Description
技术领域technical field
本发明涉及场发射技术,尤其涉及氮掺杂还原氧化石墨烯场发射阴极制备方法及氮掺杂还原氧化石墨烯场发射阴极。The invention relates to field emission technology, in particular to a method for preparing a nitrogen-doped reduced graphene oxide field emission cathode and a nitrogen-doped reduced graphene oxide field emission cathode.
背景技术Background technique
石墨烯是一种新型二维碳纳米材料,它由碳原子紧密堆积成六角型呈蜂巢晶格,具有很好的导电性和热传导性能。石墨烯理论上具有较大的场增强因子,同时有丰富的边缘结构,具有很强的场发射能力,有望在场发射平板显示器、场发射光源、真空电子器件等场发射领域得到利用。但是,单纯使用石墨烯作为场发射阴极获得的场发射电流强度并不高,场增强因子也不大。通过研究发现,向石墨烯中掺杂氮原子可以适当增加发射位点,降低开启电压,提高场增强因子,从而提高氮掺杂氧化还原石墨烯的场发射电流强度。有益于石墨烯材料在场发射领域的应用。Graphene is a new type of two-dimensional carbon nanomaterial, which is composed of carbon atoms tightly packed into a hexagonal honeycomb lattice, and has good electrical conductivity and thermal conductivity. In theory, graphene has a large field enhancement factor, rich edge structure, and strong field emission capability. It is expected to be used in field emission fields such as field emission flat panel displays, field emission light sources, and vacuum electronic devices. However, the field emission current intensity obtained by simply using graphene as the field emission cathode is not high, and the field enhancement factor is not large. Through research, it is found that doping nitrogen atoms into graphene can appropriately increase the emission site, reduce the turn-on voltage, and improve the field enhancement factor, thereby increasing the field emission current intensity of nitrogen-doped redox graphene. It is beneficial to the application of graphene materials in the field emission field.
目前制作掺氮石墨烯的方法主要有化学气相沉积法(CVD)。但传统的使用氮前驱物和碳前驱物催化剂表面置于高温炉中进行化学气相沉淀的方法得到的氮掺杂石墨烯的含氮量并不高,导致有效发射位点不足,在场发射性能的提高方面仍存在改进空间,同时在衬底上的石墨烯还需要进行复杂的转移工艺,不利于石墨烯场发射阴极的实际器件制作。At present, the method for producing nitrogen-doped graphene mainly includes chemical vapor deposition (CVD). However, the nitrogen content of nitrogen-doped graphene obtained by the traditional method of using nitrogen precursors and carbon precursor catalyst surfaces in a high-temperature furnace for chemical vapor deposition is not high, resulting in insufficient effective emission sites. There is still room for improvement in terms of improvement, and at the same time, the graphene on the substrate needs to be subjected to a complex transfer process, which is not conducive to the actual device fabrication of graphene field emission cathodes.
发明内容SUMMARY OF THE INVENTION
本发明的目的是提供一种氮掺杂还原氧化石墨烯场发射阴极的制备方法,该方法有效提高了石墨烯的氮含量,为场发射提供了更多的发射位点。The purpose of the present invention is to provide a method for preparing a nitrogen-doped reduced graphene oxide field emission cathode, which effectively increases the nitrogen content of graphene and provides more emission sites for field emission.
实现本发明目的的具体技术方案是:The concrete technical scheme that realizes the object of the present invention is:
一种氮掺杂还原氧化石墨烯场发射阴极的制备方法,该方法包括以下具体步骤:A method for preparing a nitrogen-doped reduced graphene oxide field emission cathode, the method comprising the following specific steps:
步骤1:制备氧化石墨烯分散液Step 1: Preparation of Graphene Oxide Dispersion
将乙基纤维素和松油醇以1∶5-20的质量比在60-100℃的水浴中混合2-6h,用磁控器搅拌2-4小时,制得有机粘合剂;将氧化石墨烯与有机粘合剂以1∶10-20的质量比混合得到氧化石墨烯糊剂,超声分散溶解0.5-2h,形成氧化石墨烯分散液;用石墨棒一端蘸取所述分散液;Mix ethyl cellulose and terpineol with a mass ratio of 1:5-20 in a water bath at 60-100 ° C for 2-6 hours, and stir with a magnetic controller for 2-4 hours to obtain an organic binder; Graphene and an organic binder are mixed in a mass ratio of 1:10-20 to obtain a graphene oxide paste, ultrasonically dispersed and dissolved for 0.5-2h to form a graphene oxide dispersion; one end of a graphite rod is dipped into the dispersion;
步骤2:氮元素掺杂Step 2: Nitrogen Doping
将步骤1的石墨棒置于干燥条件为60-120℃的真空环境下干燥30分钟;干燥后的一端带有氧化石墨烯的石墨棒与壳聚糖置于石英管中,然后放在管式炉内,石英管开口方向与进气方向相反;石英管中放入装有壳聚糖的小管,一端闭口;将一端带有氧化石墨烯的石墨棒放在石英管闭口端,装有壳聚糖的小管放在石英管开口端并对着所述石墨棒;温度300-800℃通入氩气,壳聚糖受热分解产生含氮产物,与氧化石墨烯反应进行氮原子掺杂;其中,氩气流量为10-200sccm;Place the graphite rod of
步骤3:还原氮掺杂氧化石墨烯Step 3: Reduction of Nitrogen-Doped Graphene Oxide
将步骤2的石墨棒置于石英舟中,放入600-1000℃高温炉,通入5-100sccm氢气,在5-100Pa的氢气氛围下进行还原反应,得到所述氮掺杂还原氧化石墨烯场发射阴极;其中:所述壳聚糖为粉末,质量为0.1-5g。The graphite rod of
所述氧化石墨烯通过Hummer制得。The graphene oxide was prepared by Hummer.
与已有的方案相比,本发明的有益效果在于:Compared with the existing scheme, the beneficial effects of the present invention are:
(1)本发明的氮掺杂方式相比传统的氮掺杂方式,有效提高了石墨烯的氮含量,为场发射提供了更多的发射位点,同时获得适量的缺陷有利于降低发射功函数提高了阴极的场发射能力,同时降低了开启电压,提高场增强因子,显著提高场发射电流。(1) Compared with the traditional nitrogen doping method, the nitrogen doping method of the present invention effectively increases the nitrogen content of graphene, provides more emission sites for field emission, and at the same time obtains an appropriate amount of defects, which is conducive to reducing the emission power The function improves the field emission capability of the cathode, while reducing the turn-on voltage, increasing the field enhancement factor, and significantly increasing the field emission current.
(2)与传统的CVD法制备掺氮石墨烯相比,壳聚糖天然无毒对环境友好。使用壳聚糖作为氮前驱物更加安全,避免环境污染,同时,本发明的反应条件对温度的要求更低,更加安全有效,成本低,可控性好。(2) Compared with the traditional CVD method to prepare nitrogen-doped graphene, chitosan is naturally non-toxic and environmentally friendly. Using chitosan as a nitrogen precursor is safer and avoids environmental pollution. At the same time, the reaction conditions of the present invention have lower requirements on temperature, are more safe and effective, have low cost and have good controllability.
附图说明Description of drawings
图1是本发明所述氮掺杂还原氧化石墨烯场发射阴极制备流程示意图;Fig. 1 is the nitrogen-doped reduced graphene oxide field emission cathode preparation flow schematic diagram of the present invention;
图2是本发明场发射阴极与普通石墨烯场发射阴极的发射电流密度J随电场E的变化曲线图。2 is a graph showing the variation of the emission current density J with the electric field E of the field emission cathode of the present invention and the common graphene field emission cathode.
图3是本发明氮元素掺杂表征图。FIG. 3 is a characterization diagram of nitrogen element doping in the present invention.
具体实施方式Detailed ways
下面通过具体实施方法结合附图对本发明作进一步详细说明。The present invention will be further described in detail below through specific implementation methods in conjunction with the accompanying drawings.
参阅图1,本发明具体包括:Referring to Figure 1, the present invention specifically includes:
将氧化石墨烯与有机溶剂混合得到氧化石墨烯分散液并用石墨棒2一端蘸取分散液,真空干燥后和壳聚糖4一起放入高温加热炉中,通入氩气1,壳聚糖4受热分解产生含氮产物,与氧化石墨烯3反应进行氮原子掺杂;Graphene oxide is mixed with organic solvent to obtain graphene oxide dispersion and one end of
再将得到的样品置于石英舟中在高温炉中,在氢气5氛围下进行还原反应,得到氮掺杂还原氧化石墨烯6场发射阴极。The obtained sample is then placed in a quartz boat in a high-temperature furnace, and a reduction reaction is carried out under the atmosphere of
所述的氧化石墨烯含氧量为56%,使用改进的Hummers方法制备。The oxygen content of the graphene oxide is 56%, and it is prepared by the improved Hummers method.
所述的制作步骤为,将乙基纤维素和松油醇以1:5-20的质量比在6-100℃的水浴中混合2-6h,然后与磁控器搅拌2-4h,制备有机粘合剂;将氧化石墨烯与有机粘合剂以1:10-20的质量比例混合得到氧化石墨烯糊剂,超声分散溶解0.5-2h,形成氧化石墨烯分散液。The preparation steps are as follows: mixing ethyl cellulose and terpineol in a water bath at 6-100° C. for 2-6 hours at a mass ratio of 1:5-20, and then stirring with a magnetic controller for 2-4 hours to prepare organic compounds. Binder; graphene oxide is mixed with an organic binder in a mass ratio of 1:10-20 to obtain a graphene oxide paste, and ultrasonically dispersed and dissolved for 0.5-2h to form a graphene oxide dispersion.
所述的分散液的干燥条件为在60~120℃的真空环境下干燥0.5h。The drying conditions of the dispersion liquid are drying in a vacuum environment of 60-120° C. for 0.5 h.
所述的壳聚糖为粉末,质量为0.1-5g。The chitosan is powder with a mass of 0.1-5g.
所述的氮原子掺杂反应的具体操作为,石墨棒1与壳聚糖4分别置于石英管中是将壳聚糖4放在小试管底部,开口对大试管底,石墨棒2置于大试管底部。The specific operation of the nitrogen atom doping reaction is as follows: the
所述的氢气还原氮掺杂氧化石墨烯过程的反应条件为:在600-1000℃高温炉,通入5-100sccm氢气,在5-100Pa的氢气氛围下进行还原反应。The reaction conditions of the process of reducing nitrogen-doped graphene oxide with hydrogen are as follows: in a high temperature furnace of 600-1000° C., feeding 5-100 sccm of hydrogen, and carrying out the reduction reaction in a hydrogen atmosphere of 5-100 Pa.
实施例1Example 1
1)氧化石墨烯分散液制备1) Preparation of graphene oxide dispersion
将乙基纤维素和松油醇以1∶20的质量比在80℃的水浴中混合4h,用磁控器搅拌4小时,制得有机粘合剂;将1g氧化石墨烯加入19g有机粘合剂中,超声分散溶解0.5h,形成氧化石墨烯分散液,用石墨棒蘸取少量分散液于一端,得到氧化石墨烯分散液样品;Mix ethyl cellulose and terpineol in a water bath at 80°C for 4 hours at a mass ratio of 1:20, and stir with a magnetron for 4 hours to prepare an organic binder; add 1 g of graphene oxide to 19 g of organic binder In the agent, ultrasonically disperse and dissolve for 0.5h to form a graphene oxide dispersion, and dip a small amount of the dispersion at one end with a graphite rod to obtain a graphene oxide dispersion sample;
2)氮原子掺杂2) Nitrogen atom doping
将石墨棒置于真空80摄氏度环境中干燥0.5h。将干燥后的样品和0.5g壳聚糖按照图1的方式置于石英管中,然后放在高温炉中,关闭阀门,缓慢抽真空,通入流速为20sccm的氩气。用50分钟将温度升至500℃,并在500℃时保温半个小时,等温度降为室温后取出样品;The graphite rod was dried in a vacuum environment of 80 degrees Celsius for 0.5 h. The dried sample and 0.5 g of chitosan were placed in a quartz tube as shown in Figure 1, then placed in a high-temperature furnace, the valve was closed, the vacuum was slowly evacuated, and an argon gas with a flow rate of 20 sccm was introduced. Raise the temperature to 500°C in 50 minutes, keep at 500°C for half an hour, and take out the sample after the temperature drops to room temperature;
3)还原氧原子3) Reduction of oxygen atoms
将样品置于石英舟中再放入高温炉中,管内抽真空后在900℃,50Pa的氢气氛围下进行还原反应1h,冷却至室温后得到氮掺杂还原氧化石墨烯场发射阴极。The sample was placed in a quartz boat and then placed in a high-temperature furnace. After the tube was evacuated, the reduction reaction was carried out under a hydrogen atmosphere of 900 °C and 50 Pa for 1 h. After cooling to room temperature, a nitrogen-doped reduced graphene oxide field emission cathode was obtained.
实施例2Example 2
1)氧化石墨烯分散液制备1) Preparation of graphene oxide dispersion
将乙基纤维素和松油醇以1∶20的质量比在80℃的水浴中混合4h,用磁控器搅拌4小时,制得有机粘合剂;将0.5g氧化石墨烯加入10g有机粘合剂中,超声分散溶解0.5h,形成氧化石墨烯分散液,用石墨棒蘸取少量分散液于一端,得到氧化石墨烯分散液样品;Mix ethyl cellulose and terpineol in a water bath at 80°C for 4 hours at a mass ratio of 1:20, and stir with a magnetic controller for 4 hours to prepare an organic adhesive; add 0.5 g of graphene oxide to 10 g of organic adhesive. In the mixture, ultrasonically disperse and dissolve for 0.5h to form a graphene oxide dispersion, and dip a small amount of the dispersion at one end with a graphite rod to obtain a graphene oxide dispersion sample;
2)氮原子掺杂2) Nitrogen atom doping
将石墨棒置于真空70℃环境中干燥0.5h。将干燥后的样品和0.5g壳聚糖按照图1的方式置于石英管中,然后放在高温炉中,关闭阀门,缓慢抽真空,通入流速为20sccm的氩气。用60分钟将温度升至600℃,并在600℃时保温半个小时,等温度降为室温后取出样品;The graphite rod was placed in a vacuum environment of 70 °C to dry for 0.5 h. The dried sample and 0.5 g of chitosan were placed in a quartz tube as shown in Figure 1, then placed in a high-temperature furnace, the valve was closed, the vacuum was slowly evacuated, and an argon gas with a flow rate of 20 sccm was introduced. Raise the temperature to 600°C in 60 minutes, keep at 600°C for half an hour, and take out the sample after the temperature drops to room temperature;
3)还原氧原子3) Reduction of oxygen atoms
将样品置于石英舟中再放入高温炉中,管内抽真空后在900℃,50Pa的氢气氛围下进行还原反应1h,冷却至室温后得到氮掺杂氧化还原石墨烯场发射阴极。The sample was placed in a quartz boat and then placed in a high-temperature furnace. After the tube was evacuated, the reduction reaction was carried out under a hydrogen atmosphere of 900 °C and 50 Pa for 1 h. After cooling to room temperature, a nitrogen-doped redox graphene field emission cathode was obtained.
对比例3Comparative Example 3
1)氧化石墨烯分散液制备1) Preparation of graphene oxide dispersion
将乙基纤维素和松油醇以1∶20的质量比在80℃的水浴中混合4h,用磁控器搅拌4小时,制得有机粘合剂;将1g氧化石墨烯加入19g有机粘合剂中,超声分散溶解0.5h,形成氧化石墨烯分散液,用石墨棒蘸取少量分散液于一端,得到氧化石墨烯分散液样品;Mix ethyl cellulose and terpineol in a water bath at 80°C for 4 hours at a mass ratio of 1:20, and stir with a magnetron for 4 hours to prepare an organic binder; add 1 g of graphene oxide to 19 g of organic binder In the agent, ultrasonically disperse and dissolve for 0.5h to form a graphene oxide dispersion, and dip a small amount of the dispersion at one end with a graphite rod to obtain a graphene oxide dispersion sample;
2)传统氮掺杂氧化还原石墨烯2) Traditional nitrogen-doped redox graphene
将石墨棒置于真空80摄氏度环境中干燥0.5h。将干燥后的样品置于高温炉中抽真空,通入10Pa氢气,用1.5h升温至1000℃,在1000℃氛围下保温30分钟后,通入45PaC2H3N反应1小时,冷却至室温后得到氮掺杂氧化石墨烯;The graphite rod was dried in a vacuum environment of 80 degrees Celsius for 0.5 h. Put the dried sample in a high-temperature furnace to vacuumize, pass 10Pa hydrogen, heat up to 1000°C for 1.5h, keep it at 1000°C for 30 minutes, pass 45PaC 2 H 3 N to react for 1 hour, and cool to room temperature Then nitrogen-doped graphene oxide is obtained;
3)还原氧原子3) Reduction of oxygen atoms
将样品置于石英舟中再放入高温炉中,管内抽真空后在900℃,50Pa的氢气氛围下进行还原反应1h,冷却至室温后得到氮掺杂氧化还原石墨烯场发射阴极。The sample was placed in a quartz boat and then placed in a high-temperature furnace. After the tube was evacuated, the reduction reaction was carried out under a hydrogen atmosphere of 900 °C and 50 Pa for 1 h. After cooling to room temperature, a nitrogen-doped redox graphene field emission cathode was obtained.
对所制备的场发射阴极进行场发射性能测试:Field emission performance test of the prepared field emission cathode:
使用ITO玻璃作为阴极和阳极,将实施例1和对比例得到的石墨棒通过导电胶带固定于阴极ITO玻璃上作为发射极,得到可用于测量场发射性能的器件,并分别测量不同发射极的场发射性能,开启电压,场增强因子。由图2可知,使用本发明制得的氮掺杂还原氧化石墨烯场发射阴极的场发射能力更强,开启电压更低,发射电流显著增强,具有更强的场发射性能。图3为实施例1的XPS表征,氮元素掺杂比例高达4%。Using ITO glass as cathode and anode, the graphite rod obtained in Example 1 and Comparative Example was fixed on the cathode ITO glass as an emitter through conductive tape to obtain a device that can be used to measure field emission performance, and the field emission of different emitters were measured respectively. Emission performance, turn-on voltage, field enhancement factor. As can be seen from FIG. 2 , the nitrogen-doped reduced graphene oxide field emission cathode prepared by the present invention has stronger field emission capability, lower turn-on voltage, significantly enhanced emission current and stronger field emission performance. FIG. 3 is the XPS characterization of Example 1, and the doping ratio of nitrogen element is as high as 4%.
以上内容是结合具体的实施方案对本发明所作的进一步详细说明,不能认定本发明的具体实施只局限于这些说明内容,对于本发明所属的技术领域的普通技术人员来说,在不脱离本构思的前提下,还可以做出若跟简单推演或替换。The above content is a further detailed description of the present invention in conjunction with specific embodiments, and it cannot be considered that the specific implementation of the present invention is limited to these descriptions. Under the premise, simple deductions or substitutions can also be made.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120149897A1 (en) * | 2010-12-10 | 2012-06-14 | Jeon In Yup | Method of preparing nitrogen-doped graphene and nitrogen-doped graphene prepared thereby |
| CN103407989A (en) * | 2013-06-24 | 2013-11-27 | 温州医学院 | Low-temperature environmentally-friendly preparation method of nitrogen edge doped graphene |
| CN105552371A (en) * | 2016-01-20 | 2016-05-04 | 福州大学 | Preparation and application of nitrogen-doped graphene-carbon nanohorn composite material |
| CN106700136A (en) * | 2016-11-18 | 2017-05-24 | 武汉理工大学 | Graphene/chitosan composite material and preparation method thereof |
| CN108335955A (en) * | 2018-01-11 | 2018-07-27 | 北京科技大学 | A kind of graphene-based field emission cold-cathode and preparation method |
| CN108831759A (en) * | 2018-06-26 | 2018-11-16 | 桂林电子科技大学 | A kind of porous carbon composite material based on graphene/chitosan and its preparation method and application |
| JP2019052083A (en) * | 2017-09-13 | 2019-04-04 | 東レ株式会社 | Graphene powder, graphene powder/organic solvent dispersion, graphene-electrode active material composite particle, electrode paste, and electrode |
| CN110155991A (en) * | 2019-04-24 | 2019-08-23 | 华东师范大学 | A kind of preparation method of redox graphene and nitrogen-doped graphene |
-
2020
- 2020-03-27 CN CN202010228089.2A patent/CN111498836A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120149897A1 (en) * | 2010-12-10 | 2012-06-14 | Jeon In Yup | Method of preparing nitrogen-doped graphene and nitrogen-doped graphene prepared thereby |
| CN103407989A (en) * | 2013-06-24 | 2013-11-27 | 温州医学院 | Low-temperature environmentally-friendly preparation method of nitrogen edge doped graphene |
| CN105552371A (en) * | 2016-01-20 | 2016-05-04 | 福州大学 | Preparation and application of nitrogen-doped graphene-carbon nanohorn composite material |
| CN106700136A (en) * | 2016-11-18 | 2017-05-24 | 武汉理工大学 | Graphene/chitosan composite material and preparation method thereof |
| JP2019052083A (en) * | 2017-09-13 | 2019-04-04 | 東レ株式会社 | Graphene powder, graphene powder/organic solvent dispersion, graphene-electrode active material composite particle, electrode paste, and electrode |
| CN108335955A (en) * | 2018-01-11 | 2018-07-27 | 北京科技大学 | A kind of graphene-based field emission cold-cathode and preparation method |
| CN108831759A (en) * | 2018-06-26 | 2018-11-16 | 桂林电子科技大学 | A kind of porous carbon composite material based on graphene/chitosan and its preparation method and application |
| CN110155991A (en) * | 2019-04-24 | 2019-08-23 | 华东师范大学 | A kind of preparation method of redox graphene and nitrogen-doped graphene |
Non-Patent Citations (2)
| Title |
|---|
| SHUXIAN YU ET.AL: "One-step synthesis of tunable nitrogen-doped graphene from graphene oxide and its high performance field emission properties", 《VACUUM》 * |
| SUBODHKUMAR ET.AL: "Doping and reduction of graphene oxide using chitosan-derived volatile N-heterocyclic compounds for metal-free oxygen reduction reaction", 《CARBON》 * |
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