CN111400867A - Simulation analysis-based microwave solid-discharge reliability design method - Google Patents

Abstract

The invention discloses a simulation analysis-based microwave solid-state discharge reliability design method, which comprises the following steps: according to the structural parameters of the dielectric substrate and the composite conductive film which are fixedly placed by the microwave, carrying out three-dimensional geometric modeling on the dielectric substrate and the composite conductive film to obtain a modeling model; loading various simulation conditions on the modeling model to simulate various physical fields to obtain a simulation result under each simulation condition; the simulation system comprises a plurality of simulation factors, a plurality of sensors and a plurality of sensors, wherein the plurality of simulation conditions are obtained by combining the selectable items of the plurality of simulation factors; various simulation factors include: optional heat sink conditions for microwave fixation, optional material types of the dielectric substrate, optional thickness of the dielectric substrate, optional copper layer thickness of the composite conductive film and optional nickel layer thickness of the composite conductive film; and determining a reliability design scheme of microwave solid-state radiation according to each obtained simulation result. The invention can improve the reliability of the designed microwave solid discharge.

Description

A Reliability Design Method for Microwave Solid Placement Based on Simulation Analysis

technical field

The invention belongs to the technical field of microwaves, and in particular relates to a method for designing reliability of microwave solid placement based on simulation analysis.

Background technique

High dielectric constant substrates can significantly reduce the size of the circuit and meet the needs of high-density wiring. In order to meet the application requirements of high density and high integration for microwave placement, a high dielectric constant dielectric substrate can be used to reduce the volume and weight of microwave placement circuits, and a composite conductive film can be used on the high dielectric constant dielectric substrate. Solve the power load problem of microwave stationary amplifier.

Since the composite conductive film will generate Joule heat after being energized, this Joule heat will damage the composite conductive film and the dielectric substrate, thereby burying a hidden danger for the reliability of microwave placement. Therefore, in the related art, in order to improve the reliability of the microwave placement, the circuit layout of the microwave placement is usually optimized to reduce the current on the composite conductive film.

However, under the condition that the power demand remains unchanged, there is limited room for improving the reliability of the microwave stationary amplifier by optimizing the circuit layout. Therefore, how to further improve the reliability of the designed microwave stationary amplifier is a technical problem that needs to be solved urgently.

SUMMARY OF THE INVENTION

In order to solve the above problems existing in the prior art, an embodiment of the present invention provides a method for designing reliability of microwave stationary placement based on simulation analysis.

The technical problem to be solved by the present invention is realized by the following technical solutions:

A reliability design method for microwave solid-state placement based on simulation analysis, comprising:

According to the structural parameters of the dielectric substrate placed by the microwave and the structural parameters of the composite conductive film on the dielectric substrate, three-dimensional geometric modeling is performed on the dielectric substrate and the composite conductive film to obtain a modeling model; The thickness in the structural parameters of the dielectric substrate is a preset initial thickness;

Load multiple simulation conditions on the modeling model to simulate multiple physical fields, and obtain simulation results under each simulation condition; wherein, the multiple simulation conditions are combinations of the respective options of multiple simulation factors obtained; the various simulation factors include: optional heat sink conditions for the microwave placement, optional material type of the dielectric substrate, optional thickness of the dielectric substrate, optional composite conductive film Copper layer thickness and optional nickel layer thickness of the composite conductive film;

According to the obtained simulation results, the reliability design scheme of microwave placement is determined.

In an embodiment of the present invention, determining the reliability design scheme of the microwave stationary placement according to the obtained simulation results, including:

Determine the simulation condition corresponding to the simulation result with the smallest comprehensive stress on the modeling model among the obtained simulation results; the comprehensive stress is: the comprehensive stress under the multiple physical fields;

In the determined simulation conditions, the selected simulation factors are taken as the reliability design scheme of microwave placement.

In an embodiment of the present invention, after using the determined simulation conditions and selected simulation factors as a reliability design solution for microwave placement, the method further includes:

Loading the determined simulation conditions on the modeling model, and performing a current sweep on the modeling model within a preset current range;

According to the result of the current scan, the overcurrent capability of the microwave discharge in the reliability design scheme is determined.

In one embodiment of the present invention, the plurality of physical fields include: a thermal field;

According to the result of the current scan, the overcurrent capability of the microwave stationary discharge in the reliability design scheme is determined, including:

In the results of the current scan, the current when the thermal field stress that the modeling model is subjected to reaches 120°C ± 5°C is taken as the maximum overcurrent that the microwave placement can withstand in the reliability design scheme.

In an embodiment of the present invention, the method further includes: using a numerical fitting method to fit a prediction formula of the overcurrent capability of the microwave discharge in the reliability design scheme according to the result of the current scan.

In an embodiment of the present invention, the thickness of the composite conductive film is 10 μm, and when the thickness of the nickel layer of the composite conductive film is fixed, the optional thickness of the copper layer of the composite conductive film is within [1 μm, 2 μm] , all thicknesses separated by 0.1 μm;

When the thickness of the composite conductive film is 10 μm, and the thickness of the copper layer of the composite conductive film is fixed, the optional nickel layer thickness of the composite conductive film is all thicknesses within [1 μm, 2 μm] with an interval of 0.1 μm .

In an embodiment of the present invention, the optional heat sink conditions for the microwave placement include: heat dissipation under pure air conditions, heat dissipation with gold attached to the bottom surface of the substrate, and heat dissipation by an ideal heat sink.

In an embodiment of the present invention, optional material types of the dielectric substrate include: SF210K and TD36.

In an embodiment of the present invention, the optional thickness of the dielectric substrate of any material type includes: 0.254 mm, 0.381 mm, and 0.635 mm.

In the microwave placement reliability design method based on simulation analysis provided by the embodiment of the present invention, according to the structural parameters of the dielectric substrate for microwave placement and the structural parameters of the composite conductive film on the dielectric substrate, the dielectric substrate and the composite conductive film are subjected to Three-dimensional geometric modeling is performed to obtain a modeling model; then, a variety of simulation conditions obtained by pre-combination are loaded on the modeling model to simulate a variety of physical fields, and the simulation results under each simulation condition are obtained; due to a variety of simulation factors Including various factors other than the circuit layout that affect the reliability of the microwave placement, so according to the obtained simulation results, determine the reliability design scheme of the microwave placement and design the microwave placement according to this scheme, it can improve the designed reliability. Reliability of microwave placement.

The present invention will be further described in detail below with reference to the accompanying drawings and embodiments.

Description of drawings

FIG. 1 is a schematic flowchart of a method for designing microwave solid-state reliability based on simulation analysis provided by an embodiment of the present invention;

Fig. 2 is a schematic diagram of the variation of the temperature of the modeling model with the thickness of the copper layer during the simulation analysis process of the method shown in Fig. 1;

3 is a schematic diagram of the variation of the film stress of the composite conductive film with the thickness of the copper layer during the simulation analysis process of the method shown in FIG. 1;

FIG. 4 is a schematic diagram of the change of the interface stress between the dielectric substrate and the composite conductive film with the thickness of the copper layer during the simulation analysis process of the method shown in FIG. 1;

Fig. 5 is a schematic diagram of the variation of the temperature of the modeling model with the thickness of the nickel layer in the simulation analysis process of the method shown in Fig. 1;

6 is a schematic diagram of the variation of the film stress of the composite conductive film with the thickness of the nickel layer during the simulation analysis process of the method shown in FIG. 1;

7 is a schematic diagram of the variation of the interfacial stress between the dielectric substrate and the composite conductive film with the thickness of the nickel layer during the simulation analysis process of the method shown in FIG. 1;

FIG. 8 is a schematic diagram of the variation of the temperature of the modeling model with the current under various heat sink conditions during the simulation analysis process of the method shown in FIG. 1;

FIG. 9 is a schematic diagram of a situation in which the temperature of the modeling model changes with the current when the material types of the dielectric substrates are different during the simulation analysis process of the method shown in FIG. 1;

FIG. 10 is a schematic diagram of the variation of the film stress of the composite conductive film with the current when the material types of the dielectric substrates are different during the simulation analysis process of the method shown in FIG. 1;

FIG. 11 is a schematic diagram of the variation of the temperature of the modeling model with the current when the thickness of the dielectric substrate is different during the simulation analysis process of the method shown in FIG. 1;

FIG. 12 is a schematic diagram of the variation of the temperature of the modeling model with the current in a reliability design scheme determined by the method shown in FIG. 1;

FIG. 13 is a schematic diagram of the variation of the film stress of the composite conductive film with the current in a reliability design scheme determined by the method shown in FIG. 1 .

Detailed ways

The present invention will be described in further detail below with reference to specific embodiments, but the embodiments of the present invention are not limited thereto.

In order to further improve the reliability of the designed microwave placement, an embodiment of the present invention provides a method for designing the reliability of microwave placement based on simulation analysis. As shown in FIG. 1 , the method includes the following steps:

S10: According to the structural parameters of the dielectric substrate placed by the microwave and the structural parameters of the composite conductive film on the dielectric substrate, perform three-dimensional geometric modeling on the dielectric substrate and the composite conductive film to obtain a modeling model.

The thickness in the structural parameters of the dielectric substrate is a preset initial thickness.

Specifically, in the COMSOL software, the geometric model of the dielectric substrate and the geometric model of the composite conductive film are established simultaneously; The interface module sets the boundary conditions to obtain the final modeling model composed of the dielectric substrate and the composite conductive film. Among them, COMSOL software is a physics-based software for understanding, predicting and optimizing engineering design with the help of numerical simulation.

S20: Load multiple simulation conditions on the modeling model to simulate multiple physical fields, and obtain simulation results under each simulation condition. Among them, various simulation conditions are obtained by combining the respective optional options of various simulation factors; various simulation factors include: optional heat sink conditions for microwave placement, optional material types for dielectric substrates, and optional dielectric substrates. Thickness, optional copper layer thickness for composite conductive films, and optional nickel layer thickness for composite conductive films. For the clarity of the scheme and layout, the options for each simulation factor will be illustrated in the following sections.

In this step, various physical fields can include: electric field, thermal field and force field.

In order to obtain a more comprehensive simulation result, five simulation factors can be combined in an exhaustive manner when the respective options of various simulation factors are combined. For example, assuming that each simulation factor has 2 options, a total of 32 simulation conditions can be combined from 2 to ⁵ .

In addition, in order to improve the simulation efficiency, the simulation conditions obtained in an exhaustive manner can be further screened according to the simulation experience of the simulation personnel, and various simulation conditions finally loaded into the modeling model can be obtained.

S30: According to the obtained simulation results, determine the reliability design scheme of the microwave stationary placement.

Among them, according to the obtained simulation results, it is determined that there are many specific implementations of the reliability design scheme of microwave stationary placement. Exemplarily, in an implementation manner, when the purpose of the simulation analysis is to pay more attention to the thermal field effect of the microwave solid-state discharge, according to each obtained simulation result, the reliability design scheme of the microwave solid-state discharge is determined, which may include:

Determine the simulation conditions corresponding to the simulation result with the smallest thermal field stress on the modeling model among the obtained simulation results;

In the determined simulation conditions, the selected simulation factors are used as the reliability design scheme of the microwave placement.

In practical applications, the temperature of each position of the modeling model under the thermal field can be displayed in the COMSOL software; among the obtained simulation results, the simulation conditions corresponding to the simulation result with the smallest thermal field stress on the modeling model are determined. When the simulation results are obtained, the maximum temperature of the modeling model under the thermal field can be compared, and the simulation result with the smallest maximum temperature can be regarded as the simulation result with the smallest thermal field stress on the modeling model.

In another implementation manner, when the purpose of the simulation is to pay more attention to the force field effect of the microwave placement, the reliability design scheme of the microwave placement is determined according to the obtained simulation results, which may include:

Determine the simulation conditions corresponding to the simulation result with the smallest force field stress on the modeling model among the obtained simulation results;

In the determined simulation conditions, the selected simulation factors are taken as the reliability design scheme of microwave placement.

In practical applications, COMSOL software can display the force field stress of the modeling model in multiple parts under the force field. Specifically, such as the film layer stress of the composite conductive film, the stress on the dielectric substrate, and the interface stress between the dielectric substrate and the composite conductive film, etc. The film layer stress of the composite conductive film refers to the force field stress borne by each film layer in the composite conductive film. When determining the simulation condition corresponding to the simulation result with the smallest force field stress on the modeling model among the obtained simulation results, the force field borne by each part of the modeling model in the obtained simulation results can be determined. The simulation result with the smallest stress is regarded as the simulation result with the smallest force field stress on the modeling model.

In another implementation manner, when the purpose of the simulation is concerned with various physical field effects of the microwave placement, the reliability design scheme of the microwave placement is determined according to the obtained simulation results, which may include:

Among the obtained simulation results, the simulation conditions corresponding to the simulation result with the smallest comprehensive stress on the modeling model are determined; the comprehensive stress mentioned here is: the stress under various physical fields;

In the determined simulation conditions, the selected simulation factors are used as the reliability design scheme of the microwave placement.

In practical applications, there is a parameter representing the comprehensive stress in the COMSOL software. By reading the value of this parameter, the comprehensive stress on the modeling model can be known.

It can be understood that, in the determined simulation conditions, the selected options of each simulation factor are taken as the reliability design scheme of the microwave placement, and the specific microwave placement can be carried out according to the factors selected in the selected options. the design of.

In the microwave placement reliability design method based on simulation analysis provided by the embodiment of the present invention, according to the structural parameters of the dielectric substrate for microwave placement and the structural parameters of the composite conductive film on the dielectric substrate, the dielectric substrate and the composite conductive film are subjected to Three-dimensional geometric modeling is performed to obtain a modeling model; then, a variety of simulation conditions obtained by pre-combination are loaded on the modeling model to simulate a variety of physical fields, and the simulation results under each simulation condition are obtained; due to a variety of simulation factors Including various factors other than the circuit layout that affect the reliability of microwave placement, so according to the obtained simulation results, the reliability design scheme of microwave placement is determined and the microwave placement is designed in sequence, which can further improve the designed reliability. Reliability of microwave placement.

In addition, optionally, after using the selected simulation factors in the determined simulation conditions as a reliability design solution for microwave placement, the method provided by the embodiment of the present invention may further include:

Load the determined simulation conditions on the modeling model, and perform a current sweep on the modeling model within a preset current range;

According to the results of the current scanning, the overcurrent capability of the microwave discharge in the reliability design scheme is determined.

The result of this current scan includes data on thermal field stress corresponding to the applied scan current. Correspondingly, according to the results of the current scanning, determine the overcurrent capability of the microwave stationary discharge in the reliability design scheme, specifically, according to the data of the thermal field stress corresponding to the scanning current, determine the reliability design scheme, the microwave Fixed overcurrent capability. For example, in the results of the current sweep, the current when the maximum temperature that the modeling model withstands reaches 120°C±°C is taken as the maximum overcurrent that the microwave placement can withstand in the reliability design scheme. Among them, 120°C is close to the high temperature operating upper limit of components such as components or circuit boards of electronic equipment proposed in the field of reliability.

In addition, after using the selected simulation factors in the determined simulation conditions as the reliability design scheme of the microwave stationary placement, the embodiment of the present invention can further use the numerical fitting method to fit the current scanning results. In this reliability design scheme, the prediction formula of the overcurrent capability of microwave discharge.

When fitting, the formula y=a+bx+cx ² can be used for fitting; where x represents temperature and y represents current; specifically, the data of thermal field stress corresponding to multiple sets of scanning currents are taken and substituted into the formula , the specific values of a, b and c can be fitted.

It can be understood that after the microwave placement is designed according to the determined reliability design scheme, the overcurrent of the microwave placement can be predicted according to the temperature read by the temperature sensor of the microwave placement, so as to prevent the microwave placement. The reliability of the working state plays a monitoring role.

In order to clarify the scheme and layout, the options for each simulation factor are illustrated below.

Exemplarily, the optional heat sink conditions for the microwave placement may include: heat dissipation under pure air conditions, heat dissipation with gold attached to the bottom surface of the substrate, and heat dissipation by an ideal heat sink.

Wherein, when gold is attached to the bottom surface of the substrate to dissipate heat, in addition to the heat dissipation effect achieved by the deposition of gold on the bottom surface of the substrate, heat can also be dissipated by air. It is understood that the composite conductive film can dissipate the heat generated by itself in two ways: the surrounding air above and on the sides of the composite conductive film, and the substrate below. Correspondingly, the dielectric substrate also has two ways of dissipating heat: dissipating heat through air on one side of the dielectric substrate that carries the circuit, and dissipating heat through a heat sink connected on the other side. Among them, if the heat transfer coefficient h is used to simulate the heat flux, then when the heat is dissipated to the air, the heat flux can be expressed as: h=5W/(m ² ×k); where W represents the power unit watt, and m represents the heat The flow distance, k is the Boltzmann constant.

In the same way, when the ideal heat sink dissipates heat, in addition to the ideal heat sink can achieve the heat dissipation effect, the heat can also be dissipated by air. Here, the ideal heat sink connected to the bottom surface of the substrate is an ideal heat sink of 300K. In practical applications, when the fixed plane of the dielectric substrate for microwave placement is large enough, the heat sink condition for microwave placement can be regarded as an ideal heat sink to dissipate heat.

Exemplarily, the optional material types of the dielectric substrate may include: SF210K and TD36. Here, SF210K and TD36 are both types of existing high dielectric constant dielectric substrates.

In addition, based on the optional material types of the above two dielectric substrates, the optional thickness of each dielectric substrate may include: 0.254 mm, 0.381 mm, and 0.635 mm.

Based on the material type and optional thickness of the above-mentioned dielectric substrate, the composite conductive film can be a conductive film with a thickness of 10 μm, and the film structure from bottom to top is nichrome, gold, copper, nickel and gold. Wherein, the thickness of the nickel-chromium alloy is 0.05 μm, and the thickness of the underlying gold is 3 μm; when the thickness of the nickel layer is set to be 1.5 μm, the thickness of the copper layer can include all thicknesses within [1 μm, 2 μm] with an interval of 0.1 μm; The thickness of the top layer gold varies with the thickness of the copper layer, so that the total thickness of the composite conductive film is constant. Alternatively, when the copper layer thickness is set to be 1.5 μm, the nickel layer thickness can include all thicknesses within [1 μm, 2 μm] with an interval of 0.1 μm; the thickness of the top layer gold varies with the thickness of the nickel layer so that the composite The total thickness of the conductive film was not changed.

Hereinafter, some simulation results obtained in the simulation process in the embodiment of the present invention will be illustrated by way of example.

Figure 2 is a schematic diagram of the change of the temperature of the modeling model with the thickness of the copper layer during the simulation analysis process of the method shown in Figure 1; it can be seen from Figure 2 that with the increase of the thickness of the copper layer, the temperature decreases linearly.

Figure 3 is a schematic diagram of the variation of the film stress of the composite conductive film with the thickness of the copper layer during the simulation analysis process of the method shown in Figure 1; it can be seen from Figure 3 that with the increase of the thickness of the copper layer, each film layer The mechanical stress experienced decreases linearly.

Fig. 4 is a schematic diagram of the variation of the interfacial stress between the dielectric substrate and each film layer of the composite conductive film with the thickness of the copper layer during the simulation analysis process of the method shown in Fig. 1; As the layer thickness increases, the interface stress is increasing, but it is still an order of magnitude smaller than the theoretical maximum yield stress, which means that the dielectric substrate and the composite conductive film meet the requirements in terms of adhesion stress.

Among them, in Figures 2, 3 and 4, the heat sink conditions for microwave placement, the material type of the dielectric substrate, the thickness of the dielectric substrate, and the thickness of the nickel layer of the composite conductive film are all given options.

Figure 5 is a schematic diagram of the variation of the temperature of the modeling model with the thickness of the nickel layer during the simulation analysis process of the method shown in Figure 1; it can be seen from Figure 5 that the temperature decreases linearly with the increase of the thickness of the nickel layer.

Figure 6 is a schematic diagram of the variation of the film stress of the composite conductive film with the thickness of the nickel layer during the simulation analysis process of the method shown in Figure 1; it can be seen from Figure 6 that with the increase of the thickness of the nickel layer, each film layer The mechanical stress experienced decreases linearly.

Fig. 7 is a schematic diagram of the variation of the interfacial stress between the dielectric substrate and the composite conductive film with the thickness of the nickel layer during the simulation analysis process of the method shown in Fig. 1; it can be seen from Fig. 7 that as the thickness of the nickel layer increases, The interfacial stress is increasing, but it is still an order of magnitude smaller than the theoretical maximum yield stress, which means that the dielectric substrate and composite conductive film meet the requirements in terms of adhesion stress.

Among them, in Figures 5, 6 and 7, the heat sink conditions for microwave placement, the material type of the dielectric substrate, the thickness of the dielectric substrate, and the thickness of the copper layer of the composite conductive film are all given options.

FIG. 8 is a schematic diagram of the variation of the temperature of the modeling model with the current under various heat sink conditions during the simulation analysis process of the method shown in FIG. 1;

In FIG. 8 , the thickness of the dielectric substrate placed by the microwave, the material type of the dielectric substrate, the thickness of the nickel layer of the composite conductive film, and the thickness of the copper layer of the composite conductive film are all given options.

FIG. 9 is a schematic diagram of the variation of the temperature of the modeling model with the current when the material types of the dielectric substrates are different during the simulation analysis process of the method shown in FIG. 1;

Fig. 10 is a schematic diagram of the variation of the film stress of the composite conductive film with the current when the material types of the dielectric substrates are different during the simulation analysis process of the method shown in Fig. 1; it can be seen from Figs. large, the stress on the dielectric substrate increases.

In FIGS. 9 and 10 , the heat sink conditions for microwave placement, the thickness of the dielectric substrate, the thickness of the nickel layer of the composite conductive film, and the thickness of the copper layer of the composite conductive film are all given options.

FIG. 11 is a schematic diagram illustrating the variation of the temperature of the modeling model with the current when the thickness of the dielectric substrate is different during the simulation analysis process of the method shown in FIG. 1 . It can be seen from FIG. 11 that under the heat sink condition of an ideal heat sink, the thinner the thickness of the dielectric substrate, the better the heat dissipation effect.

FIG. 12 is a schematic diagram of the variation of the temperature of the modeling model with the current in a reliability design scheme determined by the method shown in FIG. 1 . It can be seen from Figure 12 that when the thickness of the copper layer is selected as 1 μm and the thickness of the nickel layer is selected as 2 μm, the current corresponding to a temperature of 120°C is about 2.7A. When the thickness of the copper layer is selected as 2 μm and the thickness of the nickel layer is selected as 1 μm, the current corresponding to the temperature of 120°C is about 2.9A.

FIG. 13 is a schematic diagram of the variation of the film stress of the composite conductive film with the current in a reliability design scheme determined by the method shown in FIG. 1 . It can be seen from Figure 13 that with the increase of the current, the film stress gradually increases.

In the description of this specification, description with reference to the terms "one embodiment," "some embodiments," "example," "specific example," or "some examples", etc., mean specific features described in connection with the embodiment or example Or features are included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, those skilled in the art may combine and combine the different embodiments or examples described in this specification.

Although the application is described herein in conjunction with the various embodiments, those skilled in the art will understand and understand from a review of the drawings, the disclosure, and the appended claims in practicing the claimed application. Other variations of the disclosed embodiments are implemented. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "an" does not exclude a plurality. A single processor or other unit may fulfill the functions of several items recited in the claims. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that these measures cannot be combined to advantage.

The above content is a further detailed description of the present invention in combination with specific preferred embodiments, and it cannot be considered that the specific implementation of the present invention is limited to these descriptions. For those of ordinary skill in the technical field of the present invention, without departing from the concept of the present invention, some simple deductions or substitutions can be made, which should be regarded as belonging to the protection scope of the present invention.

Claims (9)

1. A microwave solid-state discharge reliability design method based on simulation analysis is characterized by comprising the following steps:

according to the structural parameters of a dielectric substrate fixed by microwaves and the structural parameters of a composite conductive film on the dielectric substrate, carrying out three-dimensional geometric modeling on the dielectric substrate and the composite conductive film to obtain a modeling model; the thickness in the structural parameters of the dielectric substrate is a preset initial thickness;

loading various simulation conditions on the modeling model to simulate various physical fields to obtain a simulation result under each simulation condition; the simulation conditions are obtained by combining the selectable items of the simulation factors; the plurality of simulation factors include: optional heat sink conditions for microwave fixation, optional material types of the dielectric substrate, optional thickness of the dielectric substrate, optional copper layer thickness of the composite conductive film and optional nickel layer thickness of the composite conductive film;

and determining a reliability design scheme of microwave solid-state radiation according to each obtained simulation result.

2. The method of claim 1, wherein determining the reliability design of the microwave solid discharge based on the obtained simulation results comprises:

determining the simulation condition corresponding to the simulation result with the minimum comprehensive stress borne by the modeling model in all the obtained simulation results; the comprehensive stress is as follows: stress integrated under the plurality of physical fields;

and in the determined simulation conditions, the selected options of the simulation factors are used as a reliability design scheme for microwave fixation.

3. The method of claim 2, wherein after selecting the selected one of the simulation factors as a reliable design solution for microwave fixing in the determined simulation conditions, the method further comprises:

loading the determined simulation conditions on the modeling model, and carrying out current scanning on the modeling model within a preset current range;

from the results of the current sweep, the over-current capability of the microwave discharge in the reliability design is determined.

4. The method of claim 3, wherein the plurality of physical fields comprises: a thermal field;

the determining the over-current capability of the microwave discharge in the reliability design according to the result of the current sweep includes:

and taking the current of the modeling model when the highest temperature of the modeling model reaches 120 +/-5 ℃ in the current scanning result as the maximum overcurrent which can be borne by the microwave solid discharge in the reliability design scheme.

5. The method of claim 4, further comprising: and fitting a prediction formula of the overcurrent capacity of the microwave solid discharge in the reliability design scheme by using a numerical fitting method according to the current scanning result.

6. The method of claim 1,

the thickness of the composite conductive film is 10 mu m, and when the thickness of the nickel layer of the composite conductive film is fixed, the thickness of the optional copper layer of the composite conductive film is all thicknesses within [1 mu m, 2 mu m ] and at intervals of 0.1 mu m;

the thickness of the composite conductive film is 10 μm, and when the thickness of the copper layer of the composite conductive film is fixed, the thickness of the optional nickel layer of the composite conductive film is all thicknesses within [1 μm, 2 μm ] and at intervals of 0.1 μm.

7. The method of claim 1, wherein the selectable heat sink conditions for microwave immobilization comprise: pure air condition heat dissipation, base plate bottom surface gold-attached heat dissipation and ideal heat sink heat dissipation.

8. The method of claim 1, wherein the dielectric substrate comprises a material selected from the group consisting of: SF210K and TD 36.

9. The method of claim 8, wherein the selectable thicknesses of the dielectric substrate of any one material type includes: 0.254mm, 0.381mm, and 0.635 mm.

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