CN111404509A - Film bulk acoustic resonator - Google Patents
Film bulk acoustic resonator Download PDFInfo
- Publication number
- CN111404509A CN111404509A CN201911380188.6A CN201911380188A CN111404509A CN 111404509 A CN111404509 A CN 111404509A CN 201911380188 A CN201911380188 A CN 201911380188A CN 111404509 A CN111404509 A CN 111404509A
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- CN
- China
- Prior art keywords
- electrode
- bulk acoustic
- acoustic resonator
- film bulk
- outer edge
- Prior art date
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Links
- 238000005530 etching Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000002161 passivation Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 25
- 238000010586 diagram Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H2009/02165—Tuning
- H03H2009/02173—Tuning of film bulk acoustic resonators [FBAR]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H2009/155—Constructional features of resonators consisting of piezoelectric or electrostrictive material using MEMS techniques
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention provides a film bulk acoustic resonator, which comprises a first electrode, a second electrode positioned above the first electrode, a piezoelectric film between the first electrode and the second electrode, a substrate arranged below the first electrode, an acoustic reflection structure, an etching stop layer arranged above the second electrode and a mass load layer arranged above the etching stop layer, wherein the piezoelectric film is arranged between the first electrode and the second electrode; the projections of the acoustic reflection structure, the first electrode, the piezoelectric film and the second electrode are overlapped to define an effective area. Compared with the prior art, the invention ensures the high Q value of the device and the film thickness consistency of the frame structure of the second electrode and the mass load layer, thereby improving the consistency of the electrical parameters of the device.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the field of acoustic wave resonators, in particular to a film bulk acoustic wave resonator.
[ background of the invention ]
Referring to fig. 1, the film bulk acoustic resonator includes: a first electrode 1; a second electrode 2 positioned adjacent to and above the first electrode 1; the overlap of the first electrode 1 and the second electrode 2 defines an effective area; a piezoelectric sheet 3 interposed between the first electrode 1 and the second electrode 2; a ring 4 positioned on a surface of one of said first and second electrodes 1, 2; below the first electrode 1 there is a substrate 5 forming a cavity 6 between the first electrode 1 and the substrate 5.
The structure has certain difficulty in micro-machining process, and is not beneficial to ensuring the thickness consistency and the film flatness of the second electrode and the ring structure in batch production.
[ summary of the invention ]
Aiming at the problem of high processing difficulty in a film bulk acoustic resonator structure in the prior art, the invention provides a film bulk acoustic resonator, which comprises a first electrode, a second electrode positioned above the first electrode, a piezoelectric film positioned between the first electrode and the second electrode, a substrate and an acoustic reflection structure arranged below the first electrode, an etching stop layer arranged above the second electrode and a mass load layer arranged above the etching stop layer; the projection superposition of the acoustic reflection structure, the first electrode, the piezoelectric film and the second electrode defines an active area for the operation of the film bulk acoustic resonator; in any section of the film bulk acoustic resonator, the inner edge of the mass loading layer is positioned inside the outer edge of the effective area.
Preferably, in any cross section of the film bulk acoustic resonator, an outer edge of the mass loading layer is flush with an outer edge of the second electrode.
Preferably, in any cross section of the film bulk acoustic resonator, an outer edge of the mass loading layer is located inside an outer edge of the second electrode.
Preferably, in any cross section of the film bulk acoustic resonator, an outer edge of the mass loading layer is located outside an outer edge of the second electrode.
Preferably, the film bulk acoustic resonator further comprises a passivation layer covering the mass loading layer and the etch stop layer.
Preferably, the middle portion of the substrate is provided with a groove inward, and a cavity is formed between the groove and the first electrode, and the cavity constitutes the acoustic reflection structure.
Compared with the prior art, the thin film bulk acoustic resonator provided by the invention has the advantages that the etching stop layer is additionally inserted between the mass load layer and the second electrode, and the mass load ring is added on the etching stop layer, so that the high Quality factor (Q) value of the device is ensured, the film thickness consistency of the frame-shaped structures of the second electrode and the mass load layer is ensured, and the consistency of the electrical parameters of the device is improved.
[ description of the drawings ]
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without inventive efforts, wherein:
FIG. 1 is a schematic diagram of a prior art film bulk acoustic resonator;
fig. 2 is a schematic cross-sectional structure diagram of a film bulk acoustic resonator according to an embodiment of the present invention;
fig. 3 is a schematic cross-sectional structure diagram of a film bulk acoustic resonator according to a second embodiment of the present invention;
fig. 4 is a schematic cross-sectional structure diagram of a film bulk acoustic resonator according to a third embodiment of the present invention.
[ detailed description ] embodiments
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 2, the film bulk acoustic resonator provided by the present invention includes a first electrode 10, a second electrode 20 located above the first electrode 10, and a piezoelectric film 30 located between the first electrode 10 and the second electrode 20, and further includes a substrate 40 located below the first electrode 10, an etching stop layer 50 located above the second electrode 20, a mass loading layer 60 located above the etching stop layer 50, and a passivation layer 80, where a groove 70 is inward formed in a middle portion of the substrate 40, a cavity is formed between the groove 70 and the first electrode 10, and the cavity forms an acoustic reflection structure.
The projection superposition of the acoustic reflection structure, the first electrode 10, the piezoelectric film 30 and the second electrode 20 defines the effective area for the operation of the film bulk acoustic resonator. The mass loading layer 60 is a frame-shaped structure, the inner edge 601 of which is smaller than the outer edge of the active area.
In a first embodiment, referring to fig. 2, the outer edge 602 of the mass loading layer 60 is flush with the outer edge 202 of the second electrode 20.
In a second embodiment, referring to fig. 3, the outer edge 602 of the mass loading layer 60 is located inside the outer edge 202 of the second electrode 20.
In a third example, referring to fig. 4, the outer edge 602 of the mass loading layer 60 is located outside the outer edge 202 of the second electrode 20.
Specifically, in the above embodiment, the active region of the thin film bulk acoustic resonator may be, for example, a cylinder, a square, a pentagonal cylinder, a hexagonal cylinder, or any other shape, and the first electrode, the second electrode, the piezoelectric film, the substrate, the etch stop layer, and the mass loading layer are also arranged according to the regular shape of the thin film bulk acoustic resonator. Compared with the prior art, the thin film bulk acoustic resonator provided by the invention has the advantages that the etching stop layer is additionally inserted between the mass load layer and the second electrode, and the mass load ring is added on the etching stop layer, so that the high Q value of the device is ensured, the film thickness consistency of the frame-shaped structures of the second electrode and the mass load layer is ensured, and the consistency of the electrical parameters of the device is improved.
While the foregoing is directed to embodiments of the present invention, it will be understood by those skilled in the art that various changes may be made without departing from the spirit and scope of the invention.
Claims (6)
1. A film bulk acoustic resonator comprises a first electrode, a second electrode positioned above the first electrode, and a piezoelectric film positioned between the first electrode and the second electrode, and is characterized by further comprising a substrate and an acoustic reflection structure which are arranged below the first electrode, an etching stop layer arranged above the second electrode, and a mass loading layer arranged above the etching stop layer; the projection superposition of the acoustic reflection structure, the first electrode, the piezoelectric film and the second electrode defines an active area for the operation of the film bulk acoustic resonator; in any section of the film bulk acoustic resonator, the inner edge of the mass loading layer is positioned inside the outer edge of the effective area.
2. The film bulk acoustic resonator according to claim 1, wherein, in any cross section of the film bulk acoustic resonator, an outer edge of the mass loading layer is flush with an outer edge of the second electrode.
3. The film bulk acoustic resonator according to claim 1, wherein, in any cross section of the film bulk acoustic resonator, the outer edge of the mass loading layer is located inside the outer edge of the second electrode.
4. The film bulk acoustic resonator according to claim 1, wherein, in any cross section of the film bulk acoustic resonator, the outer edge of the mass loading layer is located outside the outer edge of the second electrode.
5. The film bulk acoustic resonator of claim 1, further comprising a passivation layer overlying the mass loading layer and the etch stop layer.
6. The film bulk acoustic resonator according to claim 1, wherein the substrate has a recess formed in an intermediate portion thereof, and a cavity is formed between the recess and the first electrode, the cavity constituting the acoustic reflection structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911380188.6A CN111404509B (en) | 2019-12-27 | 2019-12-27 | Film bulk acoustic resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911380188.6A CN111404509B (en) | 2019-12-27 | 2019-12-27 | Film bulk acoustic resonator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111404509A true CN111404509A (en) | 2020-07-10 |
| CN111404509B CN111404509B (en) | 2024-07-16 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911380188.6A Active CN111404509B (en) | 2019-12-27 | 2019-12-27 | Film bulk acoustic resonator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111404509B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112242826A (en) * | 2020-10-14 | 2021-01-19 | 瑞声声学科技(深圳)有限公司 | Film bulk acoustic resonator |
| CN113824420A (en) * | 2021-08-23 | 2021-12-21 | 杭州电子科技大学 | Preparation method of single crystal thin film bulk acoustic wave resonator with double ring structure electrodes |
| CN113839637A (en) * | 2021-08-26 | 2021-12-24 | 杭州电子科技大学 | Preparation method of single crystal thin film bulk acoustic wave resonator with electrode with ring groove and strip protrusion |
| WO2024159616A1 (en) * | 2023-02-02 | 2024-08-08 | 瑞声科技（南京）有限公司 | Thin film acoustic resonator |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120200195A1 (en) * | 2009-09-28 | 2012-08-09 | Taiyo Yuden Co., Ltd. | Acoustic wave device |
| CN103296992A (en) * | 2013-06-28 | 2013-09-11 | 中国电子科技集团公司第二十六研究所 | Film bulk acoustic resonator structure and manufacturing method thereof |
| CN110504938A (en) * | 2019-07-26 | 2019-11-26 | 杭州左蓝微电子技术有限公司 | Thin film bulk acoustic wave resonator, filter and preparation method thereof |
-
2019
- 2019-12-27 CN CN201911380188.6A patent/CN111404509B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120200195A1 (en) * | 2009-09-28 | 2012-08-09 | Taiyo Yuden Co., Ltd. | Acoustic wave device |
| CN103296992A (en) * | 2013-06-28 | 2013-09-11 | 中国电子科技集团公司第二十六研究所 | Film bulk acoustic resonator structure and manufacturing method thereof |
| CN110504938A (en) * | 2019-07-26 | 2019-11-26 | 杭州左蓝微电子技术有限公司 | Thin film bulk acoustic wave resonator, filter and preparation method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112242826A (en) * | 2020-10-14 | 2021-01-19 | 瑞声声学科技(深圳)有限公司 | Film bulk acoustic resonator |
| CN112242826B (en) * | 2020-10-14 | 2024-11-05 | 瑞声声学科技(深圳)有限公司 | A thin film bulk acoustic resonator |
| CN113824420A (en) * | 2021-08-23 | 2021-12-21 | 杭州电子科技大学 | Preparation method of single crystal thin film bulk acoustic wave resonator with double ring structure electrodes |
| CN113839637A (en) * | 2021-08-26 | 2021-12-24 | 杭州电子科技大学 | Preparation method of single crystal thin film bulk acoustic wave resonator with electrode with ring groove and strip protrusion |
| WO2024159616A1 (en) * | 2023-02-02 | 2024-08-08 | 瑞声科技（南京）有限公司 | Thin film acoustic resonator |
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| Publication number | Publication date |
|---|---|
| CN111404509B (en) | 2024-07-16 |
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