Semiconductor laser stacked array positioning structure and method
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a semiconductor laser stacked array positioning structure and a semiconductor laser stacked array positioning method, which are used for positioning and clamping a semiconductor laser stacked array.
Background
In order to further improve output power of products, most of current semiconductor lasers adopt a stacked array structure, and the semiconductor lasers are vertically stacked.
Most of the existing semiconductor lasers are positioned by means of positioning holes of heat sinks of the semiconductor lasers when being stacked, and at present, a single-hole heat sink positioning structure and a double-hole heat sink positioning structure are common, but the positioning structure has obvious defects:
(1) By adopting hole positioning, positioning holes are needed to be formed on the heat sink, so that the heat dissipation capacity and the self strength of the heat sink are affected, and the product cost is increased;
(2) The gap between the thermal counter bore and the locating pin can cause the position variation of the product;
(3) Whether a single-hole structure or a double-hole structure, the position of each semiconductor laser of the product in the Z-axis direction cannot be accurately controlled, and the extrusion deformation is more serious as the number of stacked products is increased.
The defect of the positioning structure causes low reliability of the existing semiconductor laser array, and the array is easy to deform to cause the problem that the array is leaked to cause product failure, the problem that the array is difficult to optically reshape, the problem that the cost is high and the like.
Disclosure of Invention
The invention aims at: in order to solve the problem that the stacking reliability of the existing semiconductor laser is not high when the stacking is positioned through the positioning holes, the invention provides the stacking positioning structure and the stacking positioning method of the semiconductor laser, which can effectively improve the reliability of the stacking structure of the semiconductor laser.
The invention adopts the following technical scheme for realizing the purposes:
The utility model provides a semiconductor laser stacks battle array location structure, includes right side board and left side board, right side board is L shape and comprises right side board and the back plate of mutually perpendicular, the inboard level of right side board is equipped with the backup pad of a plurality of array distribution's L shape, the backup pad comprises mutually perpendicular's right side supporting edge and back supporting edge, left side board and right side board are parallel to each other, the left side board is connected through the free end of side connecting piece and back plate, the inboard level of left side board is equipped with a plurality of left supporting edges with the back supporting edge one-to-one, the upper end of right side board and left side board is equipped with the negative electrode apron through last connecting piece level, right side board and left side board lower extreme are equipped with the positive electrode apron through the connecting piece level down, specifically, right side board and left side board are processed by metal material such as stainless steel, copper or non-metal material, and its material has certain intensity in order to avoid producing deformation in the assembly process, if right side board and left side board are made by metal material, need carry out insulating treatment such as plating insulating coating or attaching insulating medium etc..
Further, the thicknesses of the supporting plate and the left supporting edge are slightly smaller than the total thickness of the insulating layer and the negative copper foil of the semiconductor laser, so that elastic contact between the copper foil of the next semiconductor laser and the lower surface of the heat sink of the previous semiconductor laser in the vertical direction is facilitated, and circuit conduction and fixation of the semiconductor laser in the Z-axis direction are ensured.
Further, the widths of the support plate and the left support edge are slightly smaller than the width from the insulating layer of the semiconductor laser to the edge of the heat sink.
Further, the distance between two adjacent support plates is equal to or slightly greater than the thickness of the semiconductor laser heat sink.
A semiconductor laser stacking positioning method comprises the steps of firstly placing a semiconductor laser on a support plate positioned at the lowest end, enabling the right side and the rear side of the semiconductor laser to be attached to the inner side of a right side plate, then placing a matched gasket in a water through hole of the semiconductor laser, overlapping the semiconductor laser upwards in the same way, fixing a left side plate at the free end of the right side plate through a side connecting piece after placing, achieving complete limiting of the stacking X axis and the Y axis, fixing a negative electrode cover plate at the upper end of the right side plate and the upper end of the left side plate through an upper connecting piece, fixing a positive electrode cover plate at the lower end of the right side plate and the lower end of the left side plate through a lower connecting piece, achieving limiting of the Z axis lower direction of each semiconductor laser through a right supporting edge, a rear supporting edge and a left supporting edge, and limiting the Z axis upper direction through elastic compression contact of the bottom surface of one semiconductor laser on the next semiconductor laser, and achieving complete limiting of the Z axis direction of the semiconductor laser in the stacking mode.
The beneficial effects of the invention are as follows:
1. According to the invention, the right side plate is matched with the left side plate, so that the complete limitation of the two directions of the X axis and the Y axis of the stacked array of semiconductor lasers is realized, the limitation of the Z axis lower direction of each semiconductor laser is realized through the supporting plate and the left supporting edge, the Z axis upper direction is limited through the elastic compression contact of the insulating layer of the next semiconductor laser and the negative copper foil on the bottom surface of the stacked array, thereby realizing the complete limitation of the Z axis direction of the stacked array, and the positioning mechanism effectively controls the position and the pressure of each semiconductor laser in the stacked array through limiting the three directions of the X axis, the Y axis and the Z axis of the stacked array, so that the stacked array is prevented from deforming, and the reliability of the stacked array is greatly improved;
2. The invention does not need to open a positioning hole on the heat sink of the semiconductor laser, can greatly improve the self strength of the heat sink, enhance the heat dissipation capacity of the heat sink and reduce the material and processing cost of the heat sink;
3. the invention can effectively ensure the controllability of the spot position of each semiconductor laser in the stacked array, thereby reducing the difficulty and cost of subsequent optical shaping.
Drawings
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a schematic view of the right side plate of the present invention;
FIG. 3 is a schematic view of the left side plate of the present invention;
fig. 4 is a schematic structural view of a semiconductor laser of the present invention;
FIG. 5 is a schematic diagram of the stacked array and the optical shaping structure of the present invention
1-Right side plate, 2-left side plate, 3-negative electrode cover plate, 4-positive electrode cover plate, 5-semiconductor laser, 6-back plate, 7-right plate, 8-right support side, 9-back support side, 10-left support side, 11-insulating layer, 12-negative copper foil, 13-heat sink, 14-stacked array, 15-light emitting area, 16-beam deflector and 17-SAC array lens.
Detailed Description
The present invention will be further described in detail with reference to the following examples for a better understanding of the present invention by those skilled in the art. The following detailed description of embodiments of the invention is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
As shown in fig. 1, this embodiment provides a semiconductor laser stacked array positioning structure, including right side board 1 and left side board 2, right side board 1 is L shape and comprises right side board 7 and back plate 6 of mutually perpendicular, the inboard level of right side board 1 is equipped with the backup pad of a plurality of array distribution's L shape, the backup pad comprises mutually perpendicular's right side supporting edge 8 and back support edge 9, right side supporting edge 8 and right side board 7 are connected perpendicularly, back support edge 9 and back plate 6 are connected perpendicularly, left side board 2 and right side board 7 are parallel to each other, left side board 2 is connected through the free end of side connecting piece and back plate 6, the side connecting piece is screw coupling mechanism, left side board 2 inboard level is equipped with a plurality of left supporting edges 10 with back support edge 9 one-to-one, left side supporting edge 10 and left side board 2 are connected perpendicularly, the upper end of right side board 1 and left side board 2 is equipped with negative electrode 3 through last connecting piece level, right side board 1 and left side board 2 lower extreme is equipped with positive electrode 4 through lower connecting piece level, left side board 1 and right side board 2 are equipped with the connecting piece, and left side board 1 and right side board are equipped with metal coating on the side board, and the insulator material such as the insulator layer is formed to the side board is equipped with the insulator material such as metal coating in the side board and the insulator layer is formed to the side board.
Preferably, the light beam turning device 16 is added to the light emitting area 15 of each semiconductor laser 5 of the stacked array 14 to make the fast axis direction of the light source emitted by each semiconductor laser 5 be collimated, and the fast axis and slow axis directions of the light source are turned 90 degrees, and then the light beam turning device is collimated by the SAC array lens 17 to complete the spot shaping of the whole stacked array 14, and the stacked array 14 adopts an array lens, so that the cost and difficulty of the slow axis shaping of the stacked array 14 can be greatly reduced.
A semiconductor laser stacking positioning method comprises the steps of firstly placing a semiconductor laser 5 on a support plate positioned at the lowest end, enabling the right side and the rear side of the semiconductor laser 5 to be attached to the inner side of a right side plate 1, then placing a matched gasket in a water through hole of the semiconductor laser 5, stacking the semiconductor lasers 5 upwards in the same way, fixing a left side plate 2 at the free end of the right side plate 1 through a side connecting piece after the placement is finished, realizing complete limit of the stacking array 14 in the X axis and the Y axis, fixing a negative electrode cover plate 3 at the upper end of the right side plate 1 and the left side plate 2 through an upper connecting piece, fixing a positive electrode cover plate 4 at the lower end of the right side plate 1 and the left side plate 2 through a lower connecting piece, enabling the stacking array 14 to limit of the Z axis lower direction of each semiconductor laser 5 through a right supporting edge 8, a rear supporting edge 9 and a left supporting edge 10, conducting elastic compression contact between an insulating layer 11 and a negative electrode 12 of the next semiconductor laser 5 on the bottom surface of the stacking array 14 in the Z axis direction, realizing complete limit of the semiconductor laser 5 in the Z axis direction, and realizing complete limit of the semiconductor laser cooling mode of the semiconductor laser 5 in the Z axis or the water cooling mode of the semiconductor laser 5.
The working principle is that the right side plate 1 and the left side plate 2 are matched to realize the complete limit of the semiconductor lasers 5 in the X axis and the Y axis of the stacked array 14, the limit of the Z axis of each semiconductor laser 5 in the lower direction is realized through the supporting plate and the left supporting edge 10, the insulating layer 11 of the next semiconductor laser 5 and the negative copper foil 12 are elastically compressed and contacted on the bottom surface of one semiconductor laser 5 on the stacked array 14 to limit the Z axis in the upper direction, so that the complete limit of the stacked array 14 in the Z axis direction is realized, and the positioning mechanism effectively controls the position and the pressure of each semiconductor laser 5 in the stacked array 14 by limiting the three directions of the X axis, the Y axis and the Z axis of the stacked array 14, prevents the stacked array 14 from deforming, and greatly improves the reliability of the stacked array 14.
Example 2
As shown in fig. 1, this embodiment is further improved on the basis of embodiment 1, specifically, the thicknesses of the supporting plate and the left supporting edge 10 are slightly smaller than the total thickness of the insulating layer 11 and the negative copper foil 12 of the semiconductor laser 5, so that elastic contact between the copper foil of the next semiconductor laser 5 and the lower surface of the heat sink 13 of the previous semiconductor laser 5 in the vertical direction is facilitated, and circuit conduction and fixation of the semiconductor laser 5 in the Z-axis direction are ensured.
Example 3
As shown in fig. 1, this embodiment is further improved on the basis of embodiment 1, specifically, the widths of the support plate and the left support edge 10 are slightly smaller than the widths of the insulating layer 11 of the semiconductor laser 5 to the edge of the heat sink 13.
Example 4
As shown in fig. 1, this embodiment is further improved on the basis of embodiment 1, specifically, the distance between two adjacent support plates is equal to or slightly greater than the thickness of the heat sink 13 of the semiconductor laser 5, so that the semiconductor laser 5 is placed between the two support plates.
The present invention is not limited to the preferred embodiments, and the patent protection scope of the invention is defined by the claims, and all equivalent structural changes made by the application of the present invention are included in the scope of the invention.