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CN1112466C - Preparation method of nanometer silicon carbide whiskers - Google Patents

Preparation method of nanometer silicon carbide whiskers Download PDF

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CN1112466C
CN1112466C CN 99110846 CN99110846A CN1112466C CN 1112466 C CN1112466 C CN 1112466C CN 99110846 CN99110846 CN 99110846 CN 99110846 A CN99110846 A CN 99110846A CN 1112466 C CN1112466 C CN 1112466C
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silicon carbide
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carbonaceous
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CN1281910A (en
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刘朗
李轩科
沈士德
凌立成
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Shanxi Institute of Coal Chemistry of CAS
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Abstract

The present invention relates to a preparation method of nanometer silicon carbide whiskers. According to that the molar ratio of carbon to silicon is 3 to 8:1, clean carbon collosol and clean silica sol are stirred and mixed for 24 hours at the room temperature to obtain binary carbon-silicon sol; through drying for 4 to 6 hours at a temperature of 100 to 150 DEG C, binary dried gel is obtained, or binary gaseous gel is obtained through supercritical drying for 20 to 180 minutes; then, carbothermic reaction is performed; finally, decarbonization is removed to remove SiO2 to obtain pure nanometer silicon carbide whiskers. The prepared silicon carbide whisker has the fine characteristics of high conversion rate, high melting quantity, high strength, high module, low thermal expansion rate, corrosion resistance, abrasion resistance, etc.

Description

一种直径为纳米级的碳化硅晶须的制备方法A method for preparing silicon carbide whiskers with a diameter of nanoscale

本发明属于一种碳化硅晶须的制备方法,具体地说涉及一种制备直径为纳米级的碳化硅晶须的方法。The invention belongs to a method for preparing silicon carbide whiskers, in particular to a method for preparing silicon carbide whiskers with a diameter of nanoscale.

碳化硅晶须具有低密度、高熔点、高强度、高模量、热膨胀率低及耐腐蚀、耐磨等优良特性,作为金属基、陶瓷基等复合材料的补强增韧剂,被广泛应用于机械、电子、航空航天及能源等领域。Silicon carbide whiskers have excellent properties such as low density, high melting point, high strength, high modulus, low thermal expansion, corrosion resistance, and wear resistance. They are widely used as reinforcing and toughening agents for metal-based, ceramic-based and other composite materials. In the fields of machinery, electronics, aerospace and energy.

碳化硅晶须的制备方法主要是使用不同硅源、炭源的碳热还原法。美国的Cutel[AM.Ceram.SOc.Bull.,1975,54(2):195]利用酸处理碳化稻壳为原料,外加SiO2调整原料的SiO2与C的比例,均匀加入复合催化剂碳化钨,装入石墨坩埚中,通入Ar气作保护性体,于高温下进行碳热还原反应制备出亚微米级的碳化硅晶须。此外还有利用超细炭粉与高岭土为原料,过碳热还原制备碳化硅晶须[纤维复合材料,1992,(1):20-22]。由于炭源反应活性低,且Si源与炭源难以达到均匀混合,上述方法制得的碳化硅晶须主要为亚微米级。The preparation method of silicon carbide whiskers is mainly the carbothermal reduction method using different silicon sources and carbon sources. U.S. Cutel[AM.Ceram.SOc.Bull., 1975,54(2):195] uses acid treatment carbonized rice husk as raw material, adds SiO 2 to adjust the ratio of SiO 2 and C of the raw material, and evenly adds composite catalyst tungsten carbide , put it into a graphite crucible, pass through Ar gas as a protective body, and carry out carbothermal reduction reaction at high temperature to prepare submicron silicon carbide whiskers. In addition, silicon carbide whiskers are prepared by using ultra-fine carbon powder and kaolin as raw materials through carbothermal reduction [Fiber Composite Materials, 1992, (1): 20-22]. Due to the low reactivity of the carbon source and the difficulty in uniform mixing of the Si source and the carbon source, the silicon carbide whiskers prepared by the above method are mainly submicron.

本发明的发明目的是提供一种直径分布均匀的直径为纳米级的碳化硅晶须的制备方法。The object of the present invention is to provide a method for preparing nano-scale silicon carbide whiskers with uniform diameter distribution.

本发明的制备方法具体步骤如下:The specific steps of the preparation method of the present invention are as follows:

(1)将炭质水性中间相溶解于有机溶剂或氨水,得到炭质溶胶-凝胶,然后加入无水乙醇或丙酮脱除其中的有机溶剂或氨水,制得净炭质溶胶;(1) dissolving the carbonaceous water-based mesophase in an organic solvent or ammonia water to obtain a carbonaceous sol-gel, and then adding absolute ethanol or acetone to remove the organic solvent or ammonia water therein to obtain a clean carbonaceous sol;

(2)加入无水乙醇或丙酮脱除硅溶胶中的溶液,制得净硅溶胶;(2) add dehydrated alcohol or acetone to remove the solution in the silica sol, make net silica sol;

(3)将净炭质溶胶和净硅溶胶按炭和硅摩尔比(3-8)∶1于室温下搅拌混和24小时,制得二元净炭质-硅溶胶;(3) Stir and mix the net carbonaceous sol and the net silica sol at room temperature for 24 hours according to the molar ratio of carbon to silicon (3-8): 1, to obtain a binary net carbonaceous-silica sol;

(4)将二元净炭质—硅溶胶于100-150℃干燥4-6小时,得到二元干凝胶;或将二元净炭质-硅溶胶放入高压釜中,在240-280℃,6.0-8.5MPa下进行超临界干燥,时间为20-180分钟,放出超临界介质之后,以惰性气体吹扫至室温,制得二元气凝胶;(4) Dry the binary net carbonaceous-silica sol at 100-150°C for 4-6 hours to obtain a binary xerogel; or put the binary net carbonaceous-silica sol in an autoclave, ℃, 6.0-8.5MPa for supercritical drying, the time is 20-180 minutes, after the supercritical medium is released, it is purged to room temperature with an inert gas to obtain a binary airgel;

(5)将所制得的二元干凝胶或二元气凝胶置于石墨坩锅中,在氩气气氛下以(1-20)℃/min的升温速率升到1300-1600℃,进行碳热还原反应,维持温度0.5-4小时,制得未提纯直径为纳米级的碳化硅晶须;(5) Place the prepared binary xerogel or binary aerogel in a graphite crucible, raise the temperature to 1300-1600°C at a rate of (1-20)°C/min under an argon atmosphere, and carry out Carbothermal reduction reaction, maintain the temperature for 0.5-4 hours, and prepare unpurified silicon carbide whiskers with a nanometer diameter;

(6)将未提纯的直径为纳米级的碳化硅晶须在450-480℃下灼烧16-24小时脱碳,然后在HF溶液中脱去SiO2,制得纯直径为纳米级的碳化硅晶须。(6) Decarburize unpurified silicon carbide whiskers with a diameter of nanometer at 450-480°C for 16-24 hours, and then remove SiO 2 in HF solution to obtain pure silicon carbide whiskers with a diameter of nanometer Silicon whiskers.

所述的有机溶剂是有机酰胺、乙二醇、丙酮。Described organic solvent is organic amide, ethylene glycol, acetone.

所述的超临界介质是乙醇、二氧化碳。The supercritical medium is ethanol and carbon dioxide.

本发明与现有技术相比具有如下优点:Compared with the prior art, the present invention has the following advantages:

所得的纳米碳化硅晶须直径分布均匀,长径比大,晶须转化率高,原料易得且反应活性高。The obtained nano-silicon carbide whiskers have uniform diameter distribution, large length-to-diameter ratio, high whisker conversion rate, easy-to-obtain raw materials and high reactivity.

本发明的实施例如下:Embodiments of the present invention are as follows:

实施例1Example 1

(1)将含炭1.5mol的由石油生焦制得的炭质水性中间相,溶解于120ml丙酮中,制成炭质溶胶,分四次加入总量500ml乙醇,脱除其中的丙酮溶液,制得净炭质溶胶。将含硅0.5mol的硅溶胶,用同样的方法脱除硅溶胶中的溶剂制得净硅溶胶;(1) Dissolve the carbonaceous aqueous mesophase produced by petroleum green coke containing 1.5mol of carbon in 120ml of acetone to make a carbonaceous sol, add a total of 500ml of ethanol in four times, remove the acetone solution therein, A net carbonaceous sol is obtained. With the silica sol containing 0.5mol of silicon, the solvent in the silica sol is removed by the same method to obtain a net silica sol;

(2)将净炭质溶胶和净硅溶胶于室温下搅拌混和24小时,制得净二元溶胶;(2) Stir and mix the net carbonaceous sol and the net silica sol at room temperature for 24 hours to obtain the net binary sol;

(3)将净二元溶胶于100℃下干燥6小时,得到二元干凝胶;(3) drying the net binary sol at 100° C. for 6 hours to obtain a binary xerogel;

(4)将所制得的二元干凝胶置于石墨坩埚中,在氩气气氛下以1℃/min的速率升温到1300℃进行碳热还原反应,维持温度4小时,制得未提纯纳米碳化硅晶须;(4) Place the prepared binary xerogel in a graphite crucible, heat up to 1300°C at a rate of 1°C/min under an argon atmosphere for carbothermal reduction reaction, and maintain the temperature for 4 hours to obtain unpurified Nano silicon carbide whiskers;

(5)将未提纯纳米碳化硅晶须于480℃下灼烧16小时脱碳,然后在HF溶液中脱去SiO2,水洗至中性,于120℃干燥制得纯纳米碳化硅晶须,晶须直径为50-90nm,长度为1-5μm。碳化硅晶须的转化率为60%。(5) Decarburize the unpurified nano silicon carbide whiskers by burning at 480°C for 16 hours, then remove SiO 2 in HF solution, wash with water until neutral, and dry at 120°C to obtain pure nano silicon carbide whiskers, The whiskers have a diameter of 50-90 nm and a length of 1-5 μm. The conversion of silicon carbide whiskers was 60%.

实施例2Example 2

(1)将含炭1.6mol的由石油生焦制得的炭质水性中间相,溶解于120ml乙二醇中,制成炭质凝胶,分四次加入总量1000ml乙醇,脱除其中的乙二醇溶液,制得净炭质溶胶。将含硅0.2mol的硅溶胶,用同样的方法脱除硅溶胶中得溶剂制得净硅溶胶;(1) Dissolve the carbonaceous aqueous mesophase obtained from petroleum green coke containing 1.6mol of carbon in 120ml of ethylene glycol to make a carbonaceous gel, add a total of 1000ml of ethanol in four times, and remove the Ethylene glycol solution to obtain a clean carbonaceous sol. With the silica sol containing 0.2mol of silicon, the solvent obtained in the silica sol is removed by the same method to obtain the net silica sol;

(2)将净炭质溶胶和净硅溶胶于室温下搅拌混和24小时,制得净二元溶胶;(2) Stir and mix the net carbonaceous sol and the net silica sol at room temperature for 24 hours to obtain the net binary sol;

(3)将净二元溶胶于150℃下干燥4小时,得到二元干凝胶;(3) drying the net binary sol at 150° C. for 4 hours to obtain a binary xerogel;

(4)将所制得的二元干凝胶置于石墨坩埚中,在氩气气氛下以20℃/min的速率升温到1600℃进行碳热还原反应,维持温度0.5小时,制得未提纯纳米碳化硅晶须;(4) Place the prepared binary xerogel in a graphite crucible, heat up to 1600°C at a rate of 20°C/min under an argon atmosphere for carbothermal reduction reaction, and maintain the temperature for 0.5 hours to obtain unpurified Nano silicon carbide whiskers;

(5)将未提纯纳米碳化硅晶须于450℃下灼烧24小时脱碳,然后在HF溶液中脱去SiO2,水洗至中性,于120℃干燥制得纯纳米碳化硅晶须,晶须直径为80-90nm,长度为1-4μm。碳化硅晶须的转化率为90%。(5) Decarburize the unpurified nano silicon carbide whiskers by burning at 450°C for 24 hours, then remove SiO 2 in HF solution, wash with water until neutral, and dry at 120°C to obtain pure nano silicon carbide whiskers, The whiskers have a diameter of 80-90 nm and a length of 1-4 μm. The conversion rate of silicon carbide whiskers was 90%.

实施例3Example 3

(1)将含炭0.4mol的由石油生焦制得的炭质水性中间相,溶解于30ml氨水溶液中,制成炭质凝胶,分三次加入总量600ml乙醇,脱除其中的氨水溶液,制得净炭质溶胶。将含硅0.1mol的硅溶胶,用同样的方法脱除硅溶胶中得溶剂制得净硅溶胶;(1) Dissolve the carbonaceous aqueous mesophase prepared from petroleum green coke containing 0.4mol of carbon in 30ml of ammonia solution to make a carbonaceous gel, add a total of 600ml of ethanol in three times, and remove the ammonia solution , to obtain a net carbonaceous sol. With the silica sol containing 0.1mol of silicon, the solvent obtained in the silica sol is removed by the same method to obtain the net silica sol;

(2)将净炭质溶胶和净硅溶胶于室温下搅拌混和24小时,制得净二元溶胶;(2) Stir and mix the net carbonaceous sol and the net silica sol at room temperature for 24 hours to obtain the net binary sol;

(3)将净二元溶胶,放入0.5升高压釜中的50ml不锈钢筒中,再在釜中加入420ml乙醇,升温至280℃,85MPa,维持温度、压力20分钟。放出乙醇,用氮气吹扫冷却至室温,制得二元炭质-硅气凝胶;(3) Put the net binary sol into a 50ml stainless steel cylinder in a 0.5-liter autoclave, then add 420ml of ethanol to the kettle, raise the temperature to 280°C, 85MPa, and maintain the temperature and pressure for 20 minutes. Emit ethanol, cool to room temperature with nitrogen purging, and make binary carbonaceous-silicon aerogel;

(4)将所制得的二元碳质-硅气凝胶置于石墨坩埚中,在氩气气氛下以3℃/min的速率升温到1400℃进行碳热还原反应,维持温度1小时,制得未提纯纳米碳化硅晶须;(4) Place the prepared binary carbonaceous-silicon aerogel in a graphite crucible, heat up to 1400°C at a rate of 3°C/min under an argon atmosphere for carbothermal reduction reaction, and maintain the temperature for 1 hour, Prepare unpurified nano silicon carbide whiskers;

(5)将未提纯纳米碳化硅晶须于460℃下灼烧20小时脱碳,然后在HF溶液中脱去SiO2,水洗至中性,于120℃干燥制得纯纳米碳化硅晶须,晶须直径为20-80nm,长度为3-10μm。碳化硅晶须的转化率为95%。(5) Decarburize the unpurified nano silicon carbide whiskers by burning at 460°C for 20 hours, then remove SiO 2 in HF solution, wash with water until neutral, and dry at 120°C to obtain pure nano silicon carbide whiskers, The whiskers have a diameter of 20-80 nm and a length of 3-10 μm. The conversion of silicon carbide whiskers was 95%.

实施例4Example 4

(1)如实施例3中步骤(1)、(2),制得净二元溶胶;(1) As in steps (1) and (2) in Example 3, a net binary sol is obtained;

(2)将所制得的净二元溶胶,放入0.5升高压釜中的50ml不锈钢筒中,再在釜中通入二氧化碳气体,升温至200℃,70MPa,维持温度,压力50分钟;放出乙醇和二氧化碳,用氮气吹扫冷却至室温,制得二元碳质-硅气凝胶;(2) Put the prepared net binary sol into a 50ml stainless steel cylinder in a 0.5-liter autoclave, then feed carbon dioxide gas into the kettle, raise the temperature to 200°C, 70MPa, maintain the temperature, and pressure for 50 minutes; release ethanol and carbon dioxide, purged with nitrogen and cooled to room temperature to prepare binary carbonaceous-silicon airgel;

(3)将所制得的二元干凝胶置于石墨坩埚中,在氩气气氛下以5℃/min的速率升温到1350℃进行碳热还原反应,维持温度2小时,制得未提纯纳米碳化硅晶须;(3) Place the prepared binary xerogel in a graphite crucible, heat up to 1350°C at a rate of 5°C/min under an argon atmosphere for carbothermal reduction reaction, and maintain the temperature for 2 hours to obtain unpurified Nano silicon carbide whiskers;

(4)将未提纯纳米碳化硅晶须于460℃下灼烧20小时脱碳,然后在HF溶液中脱去SiO2,水洗至中性,于120℃干燥制得纯纳米碳化硅晶须,晶须直径为80-90nm,长度为10-50μm。碳化硅晶须的转化率为95%。(4) Decarburize the unpurified nano silicon carbide whiskers by burning at 460°C for 20 hours, then remove SiO 2 in HF solution, wash with water until neutral, and dry at 120°C to obtain pure nano silicon carbide whiskers, The whiskers have a diameter of 80-90 nm and a length of 10-50 μm. The conversion of silicon carbide whiskers was 95%.

实施例5Example 5

(1)将含碳0.6mol的由石油生焦制得的炭质水性中间相,溶解于20ml乙二醇中,制成炭质溶胶,分四次加入总量500ml丙酮,脱除其中的乙二醇溶液,制得净炭质溶胶。将含硅0.1mol的硅溶胶,用同样的方法脱除硅溶胶中得溶剂制得净硅溶胶;(1) Dissolve the carbonaceous aqueous mesophase obtained from petroleum green coke containing 0.6mol of carbon in 20ml of ethylene glycol to make a carbonaceous sol, add a total of 500ml of acetone in four times, and remove the ethylene glycol in it. diol solution to obtain a clean carbonaceous sol. With the silica sol containing 0.1mol of silicon, the solvent obtained in the silica sol is removed by the same method to obtain the net silica sol;

(2)将净炭质溶胶和净硅溶胶于室温下搅拌混和24小时,制得净二元溶胶;(2) Stir and mix the net carbonaceous sol and the net silica sol at room temperature for 24 hours to obtain the net binary sol;

(3)将所制得的净二元溶胶,放入0.5升高压釜中的50ml不锈钢筒中,再在釜中通入二氧化碳气体,升温至250℃,75MPa,维持温度,压力40分钟。放出二氧化碳,用氮气吹扫冷却至室温,制得二元碳质-硅气凝胶。(3) Put the obtained net binary sol into a 50ml stainless steel cylinder in a 0.5-liter autoclave, then pass carbon dioxide gas into the kettle, raise the temperature to 250°C, 75MPa, maintain the temperature and pressure for 40 minutes. Release carbon dioxide, blow with nitrogen and cool to room temperature to prepare binary carbonaceous-silicon aerogel.

(4)将所制得的二元干凝胶置于石墨坩埚中,在氩气气氛下以10℃/min的速率升温到1350℃进行碳热还原反应,维持温度3小时,制得未提纯纳米碳化硅晶须;(4) Place the prepared binary xerogel in a graphite crucible, heat up to 1350°C at a rate of 10°C/min under an argon atmosphere for carbothermal reduction reaction, and maintain the temperature for 3 hours to obtain unpurified Nano silicon carbide whiskers;

(5)将未提纯纳米碳化硅晶须于460℃下灼烧20小时脱碳,然后在HF溶液中脱去SiO2,水洗至中性,于120℃干燥制得纯纳米碳化硅晶须,晶须直径为50-90nm,长度为0.5-4μm。碳化硅晶须的转化率为98%。(5) Decarburize the unpurified nano silicon carbide whiskers by burning at 460°C for 20 hours, then remove SiO 2 in HF solution, wash with water until neutral, and dry at 120°C to obtain pure nano silicon carbide whiskers, The whiskers have a diameter of 50-90 nm and a length of 0.5-4 μm. The conversion of silicon carbide whiskers was 98%.

Claims (3)

1.一种直径为纳米级的碳化硅晶须的制备方法,其特征在于具体步骤如下:1. a kind of diameter is the preparation method of the silicon carbide whisker of nanoscale, it is characterized in that concrete steps are as follows: (1)将炭质水性中间相溶解于有机溶剂或氨水,得到炭质溶胶-凝胶,然后加入无水乙醇或丙酮脱除其中的有机溶剂或氨水,制得净炭质溶胶;(1) dissolving the carbonaceous aqueous mesophase in an organic solvent or ammonia water to obtain a carbonaceous sol-gel, and then adding absolute ethanol or acetone to remove the organic solvent or ammonia water therein to obtain a clean carbonaceous sol; (2)加入无水乙醇或丙酮脱除硅溶胶中的溶液,制得净硅溶胶;(2) add dehydrated alcohol or acetone to remove the solution in the silica sol, make net silica sol; (3)将净炭质溶胶和净硅溶胶按炭和硅摩尔比(3-8)∶1于室温下搅拌混和24小时,制得二元净炭质—硅溶胶;(3) Stir and mix the net carbonaceous sol and the net silica sol at room temperature for 24 hours according to the molar ratio of carbon to silicon (3-8): 1, to obtain a binary net carbonaceous-silica sol; (4)将二元净炭质和硅溶胶于100-150℃干燥4-6小时,得到二元干凝胶;或将二元净炭质和硅溶胶放入高压釜中,在温度为240-280℃,压力为6.0-8.5MPa下进行超临界干燥,时间为20-180分钟,放出超临界介质之后,以惰性气体吹扫至室温,制得二元净炭质-硅气凝胶;(4) Dry the binary clean carbon and silica sol at 100-150°C for 4-6 hours to obtain a binary xerogel; Perform supercritical drying at -280°C and a pressure of 6.0-8.5MPa for 20-180 minutes. After releasing the supercritical medium, purge it to room temperature with an inert gas to obtain a binary pure carbonaceous-silicon aerogel; (5)将所制得的二元干凝胶置于石墨坩锅中,在氩气气氛下以(1-20)℃/min的升温速率升到1300-1600℃,进行碳热还原反应,维持温度0.5-4小时,制得未提纯直径为纳米级的碳化硅晶须;(5) Place the prepared binary xerogel in a graphite crucible, raise the temperature to 1300-1600°C at a rate of (1-20)°C/min under an argon atmosphere, and perform a carbothermal reduction reaction, Maintain the temperature for 0.5-4 hours to produce unpurified silicon carbide whiskers with a diameter of nanometer scale; (6)将未提纯的纳米碳化硅晶须在450-480℃下灼烧16-24小时脱碳,然后在HF溶液中脱去SiO2,制得纯直径为纳米级的碳化硅晶须。(6) Decarburize the unpurified nano silicon carbide whiskers by burning at 450-480°C for 16-24 hours, and then remove SiO 2 in HF solution to obtain pure silicon carbide whiskers with a diameter of nanometer scale. 2.如权利要求1所述的一种直径为纳米级的碳化硅晶须的制备方法,其特征在于所述的有机溶剂是有机酰胺、乙二醇或丙酮。2. a kind of diameter as claimed in claim 1 is the preparation method of the silicon carbide whisker of nanoscale, it is characterized in that described organic solvent is organic amide, ethylene glycol or acetone. 3.如权利要求1所述的一种直径为纳米级的碳化硅晶须的制备方法,其特征在于所述的超临界介质是乙醇或二氧化碳。3. a kind of diameter as claimed in claim 1 is the preparation method of the silicon carbide whisker of nanoscale, it is characterized in that described supercritical medium is ethanol or carbon dioxide.
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