CN111211184A - Method for enhancing light trapping effect of front surface of monocrystalline silicon battery by using micro-blasting technology - Google Patents
Method for enhancing light trapping effect of front surface of monocrystalline silicon battery by using micro-blasting technology Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
本发明公开了一种利用微喷砂技术增强单晶硅电池前表面陷光效果的方法，通过微喷射技术将纳米级的SiO2喷射硅片表面形成SiO2层，再利用超声波去除部分的SiO2，从而在硅片的表面形成较细小均一的绒面结构，有效增强陷光作用，降低反射率。The invention discloses a method for enhancing the light trapping effect on the front surface of a single crystal silicon battery by using micro-sandblasting technology. Nano-scale SiO2 is sprayed on the surface of a silicon wafer by the micro-blasting technology to form a SiO2 layer, and then ultrasonic waves are used to remove part of the SiO2 2 , so that a finer and uniform textured structure is formed on the surface of the silicon wafer, which effectively enhances the light trapping effect and reduces the reflectivity.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a method for enhancing the light trapping effect of the front surface of a monocrystalline silicon cell by using a micro-blasting technology.
Background
In the manufacture of solar cells, the texturing of the surface of a silicon wafer is a first step and is also a very critical process step. At present, chemical liquid medicine and the surface reaction of a silicon wafer are mostly adopted for texturing, the consumption of the texturing liquid medicine in the texturing process is very high, the equipment cost and the waste liquid treatment cost are also very high. The silicon wafer surface area increased by chemical texturing is limited, the silicon wafer surface reflectivity is more than 20%, the uniformity is poor, and the final cell conversion efficiency is directly influenced.
Patent document CN102189490A discloses a mechanical texturing method for a monocrystalline silicon wafer for a solar cell, which uses a sand blasting method to texture the silicon wafer, but the silicon wafer manufactured by the sand blasting texturing method has poor texturing uniformity, a damaged layer cannot be removed, the occurrence probability of over-peak of the cell is high, the power attenuation of the cell module is large, and the improvement of the efficiency of the solar cell is not facilitated.
Disclosure of Invention
The invention aims to solve the technical problem of providing a method for enhancing the light trapping effect of the front surface of a monocrystalline silicon battery by utilizing a micro-blasting technology, wherein the light trapping effect is enhanced and the reflectivity is reduced by forming a fine and uniform textured structure on the surface of a silicon wafer.
In order to solve the technical problem, the invention provides a method for enhancing the light trapping effect of the front surface of a monocrystalline silicon battery by using a micro-blasting technology, which comprises the following steps:
(1) putting the silicon wafer into a rough polishing groove for rough polishing, and removing a mechanical loss layer and impurities on the surface of the silicon wafer;
(2) putting the silicon wafer obtained in the step (1) into a cleaning tank for cleaning, and removing impurities on the silicon wafer;
(3) putting the silicon chip obtained in the step (2) into a rinsing bath for rinsing;
(4) putting the silicon wafer obtained in the step (3) into a texturing groove for texturing to form a pyramid textured structure on the surface of the silicon wafer;
(5) putting the silicon chip obtained in the step (4) into a rinsing bath for rinsing;
(6) putting the silicon wafer obtained in the step (5) into a cleaning tank for cleaning, and removing organic matters on the silicon wafer;
(7) putting the silicon chip obtained in the step (6) into a rinsing bath for rinsing;
(8) by usingForming SiO on the pyramid suede structure of the silicon wafer obtained in the step (7) by using a micro-sand blasting technology2Layer of said SiO2The layer is made of nano-SiO2Composition is carried out;
(9) putting the silicon wafer obtained in the step (8) into a rinsing bath for ultrasonic cleaning to remove SiO on the silicon wafer2Particles and a fine and uniform suede structure formed on the surface of the silicon wafer;
(10) putting the silicon wafer obtained in the step (9) into a pickling tank for cleaning, and removing residual alkali liquor on the silicon wafer;
(11) and dehydrating and drying the silicon wafer.
As an improvement of the above, in the step (8), the SiO2The layer is made of SiO with the grain diameter of 50-100 nm2And (4) forming.
As an improvement of the scheme, in the step (8), the sand blasting pressure is 0.05-0.1 MPa.
As an improvement of the proposal, in the step (8), the silicon chip is prevented from being arranged on a turntable, a spray gun moves uniformly, and nano-scale SiO is sprayed on2Spraying the silicon wafer with the rotating speed of the rotating disc being 1-3 r/min and the moving speed of the spray gun being 5-10 mm/s.
As an improvement of the scheme, in the step (4), the bath solution in the texturing bath is a mixed solution of KOH and an additive, the temperature of the texturing bath is 65-80 ℃, and the texturing time is 5-10 min.
As an improvement of the scheme, in the step (9), the cleaning frequency of the ultrasonic wave is 20-30 KHz, and the cleaning time is 2-4 min.
As an improvement of the scheme, in the step (1), the bath solution in the rough polishing groove is KOH solution, the temperature of the rough polishing groove is 60-70 ℃, and the rough polishing time is 2-5 min;
the cleaning tank in the step (2) and the cleaning tank in the step (6) are the same, and the tank liquor in the cleaning tanks is KOH and H2O2The temperature of the cleaning tank is 50-60 ℃; the cleaning time in the step (2) and the step (6) is 2-5 min;
as an improvement of the scheme, the rinsing baths in the steps (3), (5) and (7) are the same, the bath solution of the rinsing bath is clear water, and the temperature of the rinsing bath is normal temperature; and (4) cleaning time in the step (3), the step (5) and the step (7) is 2-5 min.
In the step (10), the bath solution in the pickling tank is a mixed solution of HF and HCl, the temperature of the pickling tank is normal temperature, and the cleaning time is 3-6 min.
As an improvement of the scheme, in the step (11), the silicon wafer obtained in the step (10) is placed into a slow pulling groove for surface dehydration, the temperature of the slow pulling groove is 50-60 ℃, and the time is 2-5 min;
and (3) drying the dehydrated silicon wafer in an oven, wherein the temperature of the oven is 50-60 ℃, and the circulation flow in the oven is 180-250L/min.
The implementation of the invention has the following beneficial effects:
according to the invention, the pyramid suede structure is formed on the surface of the silicon wafer through the texturing process, so that the light trapping effect can be enhanced, and the reflectivity is reduced; the invention uses micro-injection technology to inject nano-SiO2SiO is formed on the surface of a sprayed silicon wafer2Layer, removing part of SiO by ultrasonic wave2Therefore, a fine and uniform suede structure is formed on the surface of the silicon wafer, namely the suede structure similar to a gem inlay is taken out and pits are formed on the surface, the light trapping effect is further enhanced, and the reflectivity is reduced.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below.
The invention provides a method for enhancing the light trapping effect of the front surface of a monocrystalline silicon battery, which comprises the following steps:
(1) putting the silicon wafer into a rough polishing groove for rough polishing, and removing a mechanical loss layer and impurities on the surface of the silicon wafer;
specifically, the bath solution in the rough polishing groove is KOH solution, the temperature of the rough polishing groove is 60-70 ℃, and the rough polishing time is 2-5 min.
The tank liquid of the rough polishing tank comprises initial tank liquid and supplementary liquid, wherein the initial tank liquid comprises 20-35L of cold water, 250-300L of hot water and 10-15L of KOH; the supplementary liquid comprises 1.5-2.5L of cold water, 5.5-6.5L of hot water and 0.6-0.7L of KOH.
The cold water according to the present invention is normal-temperature tap water, and the hot water is tap water having a temperature of 65 to 90 ℃.
(2) Putting the silicon wafer obtained in the step (1) into a cleaning tank for cleaning, and removing impurities on the silicon wafer;
specifically, the bath solution in the cleaning bath is KOH and H2O2The temperature of the cleaning tank is 50-60 ℃, and the cleaning time is 2-5 min.
The tank liquid of the cleaning tank comprises initial tank liquid and supplementary liquid, wherein the initial tank liquid comprises 75-85L of cold water, 200-300L of hot water, 2-8L of KOH and 2.5-15L H2O2(ii) a The supplementary liquid comprises 2.5-3.5L of cold water, 4.5-5.5L of hot water, 0.1-0.2L of KOH and 0.85-0.95L H2O2。
(3) Putting the silicon chip obtained in the step (2) into a rinsing bath for rinsing;
specifically, the bath solution of the rinsing bath is clear water, the temperature of the rinsing bath is normal temperature, and the rinsing time is 2-5 min.
(4) Putting the silicon wafer obtained in the step (3) into a texturing groove for texturing to form a pyramid textured structure on the surface of the silicon wafer;
specifically, the bath solution in the texturing tank is a mixed solution of KOH and an additive, the temperature of the texturing tank is 65-80 ℃, and the cleaning time is 5-10 min;
the bath solution of the texturing groove comprises initial bath solution and supplementary solution, wherein the initial bath solution comprises 250-350L of hot water, 2-5L of additive and 5-10L of KOH; the supplementary liquid comprises 1-2L of cold water, 8-9L of hot water, 0.1-0.2L of additive and 0.65-0.75 LKOH. The additive is a common additive for a texturing process, and the invention is not particularly limited.
(5) Putting the silicon chip obtained in the step (4) into a rinsing bath for rinsing;
specifically, the bath solution of the rinsing bath is clear water, the temperature of the rinsing bath is normal temperature, and the rinsing time is 2-5 min.
(6) Putting the silicon wafer obtained in the step (5) into a cleaning tank for cleaning, and removing organic matters on the silicon wafer;
specifically, the bath solution in the cleaning bath is KOH and H2O2The temperature of the cleaning tank is 50-60 ℃, and the cleaning time is 2-5 min.
The tank liquid of the cleaning tank comprises initial tank liquid and supplementary liquid, wherein the initial tank liquid comprises 75-85L of cold water, 200-300L of hot water, 2-8L of KOH and 2.5-15L H2O2(ii) a The supplementary liquid comprises 2.5-3.5L of cold water, 4.5-5.5L of hot water, 0.1-0.2L of KOH and 0.85-0.95L H2O2。
(7) Putting the silicon chip obtained in the step (6) into a rinsing bath for rinsing;
specifically, the bath solution of the rinsing bath is clear water, the temperature of the rinsing bath is normal temperature, and the rinsing time is 2-5 min.
(8) Forming SiO on the pyramid suede structure of the silicon wafer obtained in the step (7) by adopting a micro-sand blasting technology2A layer;
specifically, a silicon wafer is placed on a turntable with the rotating speed of 1-3 r/min, a spray gun uniformly moves at the moving speed of 5-10 mm/s, and SiO is sprayed on the silicon wafer2Spraying the solution onto a silicon wafer to form a layer of SiO with the thickness of 5-10 nm2And (3) a layer. Preferably, the SiO2The layer is made of nano-SiO2And (4) particle composition. Due to SiO2The particle size of the grits is small, so that the grits can form a fine and uniform structure when sprayed on the surface of a silicon wafer, and the invention can control SiO2To form a relatively fine and uniform structure.
If SiO2If the particle diameter of (A) is too small, SiO is generated2The surface of the silicon wafer can not be effectively impacted, and a suede structure can not be formed; if SiO2If the particle size of the pyramid suede is too large, the size of the pyramid suede is increased, if the size is serious, silicon wafers may be broken, and the light trapping effect cannot be effectively enhanced and the surface reflectivity cannot be reduced due to the fact that the size of the pyramid suede is too large. Preferably, SiO2Has a particle diameter of 50 to 100 nm. More preferably, SiO2The particle size of the particles is 60-80 nm.
Note that the pressure of the blasting was applied to SiO2The formation of the layer plays an important role. Specifically, the larger the sand blasting pressure is, the higher the sand blasting speed is, the larger the sand blasting speed is, and the speed is too high, so that the sand blasting is easy to hitPenetrating through a silicon wafer, wherein the formed texture structure is uneven; the smaller the sand blasting pressure is, the smaller the sand blasting speed is, and the smaller the sand blasting speed is, so that an effective pyramid suede cannot be formed on the surface of the silicon wafer. Preferably, the sand blasting pressure is 0.05-0.1 MPa.
(9) Putting the silicon wafer obtained in the step (8) into a rinsing bath for ultrasonic cleaning to remove SiO on the silicon wafer2Particles to form a fine uniform textured structure on the surface of the silicon wafer;
the invention puts the silicon chip into a rinsing bath for ultrasonic cleaning to remove partial SiO2The particles can not only form pits on the surface of the silicon wafer and increase the texture structure, but also remove SiO2The particles pollute the silicon wafer to prevent the subsequent manufacture of the battery piece from being influenced.
Preferably, the cleaning frequency of the ultrasonic wave is 20-30 KHz, and the cleaning time is 2-4 min. If the ultrasonic cleaning frequency is too low and the cleaning time is too short, it becomes difficult to remove a part of SiO2Particles; if the ultrasonic cleaning frequency is too high and the cleaning time is too long, the removed SiO2Too many particles do not contribute to the enhancement of the trapping and the reduction of the surface reflectivity.
It should be noted that the invention can also recover SiO at the bottom of the water washing tank2The composite material can be repeatedly used to achieve the purposes of environmental protection and cost reduction.
(10) Putting the silicon wafer obtained in the step (9) into a pickling tank for cleaning, and removing residual alkali liquor on the silicon wafer;
specifically, the bath solution in the pickling tank is a mixed solution of HF and HCl, the temperature of the pickling tank is normal temperature, and the cleaning time is 3-6 min.
The bath solution of the pickling bath comprises an initial bath solution and a supplementary solution, wherein the initial bath solution comprises 150-250L of cold water, 5-10L of HF and 5-15L of HCl; the supplementary liquid comprises 5.5-6.5L of cold water, 0.35-0.45L of HF and 0.45-0.55L of HCl.
(11) Dehydrating and drying the silicon wafer;
placing the silicon wafer obtained in the step (10) into a slow lifting groove for surface dehydration, wherein the temperature of the slow lifting groove is 50-60 ℃, and the time is 2-5 min; and (3) drying the dehydrated silicon wafer in an oven, wherein the temperature of the oven is 50-60 ℃, and the circulation flow in the oven is 180-250L/min.
According to the invention, the pyramid suede structure is formed on the surface of the silicon wafer through the texturing process, so that the light trapping effect can be enhanced, and the reflectivity is reduced; the invention uses micro-injection technology to inject nano-SiO2SiO is formed on the surface of a sprayed silicon wafer2Layer, removing part of SiO by ultrasonic wave2Therefore, a fine and uniform suede structure is formed on the surface of the silicon wafer, namely the suede structure similar to a gem inlay is taken out and pits are formed on the surface, the light trapping effect is further enhanced, and the reflectivity is reduced.
Compared with the existing monocrystalline silicon battery piece which is prepared without the micro-sandblasting technology and ultrasonic cleaning steps, the monocrystalline silicon battery piece prepared by the method for enhancing the front surface light trapping effect of the monocrystalline silicon battery by using the micro-sandblasting technology has the advantages that the surface reflectivity is reduced to about 8%, and the conversion efficiency is improved by 0.1-0.15%.
While the invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not to be limited to the disclosed embodiment, but on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Claims (10)
1. A method for enhancing the light trapping effect of the front surface of a monocrystalline silicon battery by using a micro-blasting technology is characterized by comprising the following steps:
(1) putting the silicon wafer into a rough polishing groove for rough polishing, and removing a mechanical loss layer and impurities on the surface of the silicon wafer;
(2) putting the silicon wafer obtained in the step (1) into a cleaning tank for cleaning, and removing impurities on the silicon wafer;
(3) putting the silicon chip obtained in the step (2) into a rinsing bath for rinsing;
(4) putting the silicon wafer obtained in the step (3) into a texturing groove for texturing to form a pyramid textured structure on the surface of the silicon wafer;
(5) putting the silicon chip obtained in the step (4) into a rinsing bath for rinsing;
(6) putting the silicon wafer obtained in the step (5) into a cleaning tank for cleaning, and removing organic matters on the silicon wafer;
(7) putting the silicon chip obtained in the step (6) into a rinsing bath for rinsing;
(8) forming SiO on the pyramid suede structure of the silicon wafer obtained in the step (7) by adopting a micro-sand blasting technology2Layer of said SiO2The layer is made of nano-SiO2Composition is carried out;
(9) putting the silicon wafer obtained in the step (8) into a rinsing bath for ultrasonic cleaning to remove SiO on the silicon wafer2Particles and a fine and uniform suede structure formed on the surface of the silicon wafer;
(10) putting the silicon wafer obtained in the step (9) into a pickling tank for cleaning, and removing residual alkali liquor on the silicon wafer;
(11) and dehydrating and drying the silicon wafer.
2. The method for enhancing the front surface light trapping effect of the monocrystalline silicon battery by using the micro-blasting technique as claimed in claim 1, wherein in the step (8), the SiO2The layer is made of SiO with the grain diameter of 50-100 nm2And (4) forming.
3. The method for enhancing the front surface light trapping effect of the monocrystalline silicon battery by using the micro-blasting technology as claimed in claim 1, wherein in the step (8), the blasting pressure is 0.05-0.1 MPa.
4. The method for enhancing the front surface light-trapping effect of a single-crystal silicon cell by using the micro-blasting technique as claimed in claim 3, wherein in the step (8), the silicon wafer is prevented from being placed on a turntable, the blasting gun is moved uniformly, and nano-sized SiO is applied2Spraying the silicon wafer with the rotating speed of the rotating disc being 1-3 r/min and the moving speed of the spray gun being 5-10 mm/s.
5. The method for enhancing the front surface light trapping effect of the monocrystalline silicon battery by using the micro-blasting sand technology as claimed in claim 1, wherein in the step (4), the bath solution in the texturing tank is a mixed solution of KOH and an additive, the temperature of the texturing tank is 65-80 ℃, and the texturing time is 5-10 min.
6. The method for enhancing the front surface light trapping effect of the monocrystalline silicon battery by using the micro-blasting technique as claimed in claim 1, wherein in the step (9), the cleaning frequency of the ultrasonic wave is 20 to 30KHz, and the cleaning time is 2 to 4 min.
7. The method for enhancing the front surface light trapping effect of the monocrystalline silicon battery by using the micro-blasting technique as claimed in claim 1, wherein in the step (1), the bath solution in the rough polishing tank is KOH solution, the temperature of the rough polishing tank is 60-70 ℃, and the rough polishing time is 2-5 min;
the cleaning tank in the step (2) and the cleaning tank in the step (6) are the same, and the tank liquor in the cleaning tanks is KOH and H2O2The temperature of the cleaning tank is 50-60 ℃; and (3) cleaning in the step (2) and the step (6) for 2-5 min.
8. The method for enhancing the front surface light trapping effect of the monocrystalline silicon battery by using the micro-blasting sand technology as claimed in claim 1, wherein the rinsing bath in the step (3), the step (5) and the step (7) is the same, the bath solution of the rinsing bath is clear water, and the temperature of the rinsing bath is normal temperature; and (4) cleaning time in the step (3), the step (5) and the step (7) is 2-5 min.
9. The method for enhancing the front surface light trapping effect of the monocrystalline silicon battery by using the micro-blasting technique as claimed in claim 1, wherein in the step (10), the bath solution in the pickling tank is a mixed solution of HF and HCl, the temperature of the pickling tank is normal temperature, and the cleaning time is 3-6 min.
10. The method for enhancing the front surface light trapping effect of the monocrystalline silicon battery by using the micro-blasting technology as claimed in claim 1, wherein in the step (11), the silicon wafer obtained in the step (10) is placed in a slow pulling groove for surface dehydration, the temperature of the slow pulling groove is 50-60 ℃, and the time is 2-5 min;
and (3) drying the dehydrated silicon wafer in an oven, wherein the temperature of the oven is 50-60 ℃, and the circulation flow in the oven is 180-250L/min.
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Application publication date: 20200529 |
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