CN111211138B - A pixel unit, sensor and sensing array - Google Patents
A pixel unit, sensor and sensing array Download PDFInfo
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- CN111211138B CN111211138B CN201811399529.XA CN201811399529A CN111211138B CN 111211138 B CN111211138 B CN 111211138B CN 201811399529 A CN201811399529 A CN 201811399529A CN 111211138 B CN111211138 B CN 111211138B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
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- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Embodiments of the present invention provide a pixel unit, a sensor, and a sensor array. The pixel unit includes: a charge collection region for receiving radiation to generate photo-generated charge; the transmission gate is connected between the charge collection region and the suspension diffusion node and is used for transferring photo-generated charges from the charge collection region to the suspension diffusion node; and the potential adjusting region is arranged at the periphery of the charge collecting region and is used for collecting photo-generated charges to one side of the charge collecting region, which is connected with the transmission gate.
Description
Technical Field
Embodiments of the present invention relate to the field of microelectronics, and more particularly, to a pixel cell, a sensor, and a sensor array.
Background
This section is intended to provide a background or context to the embodiments of the invention that are recited in the claims. The description herein is not admitted to be prior art by inclusion in this section.
Currently, complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS) sensors are of interest because of their low cost and suitability for mass production. For example, common CMOS sensors are those based on photodiode structures. In a long-distance and high-precision ranging scenario, since the propagation speed of light is fast, in order to ensure that the CMOS sensor can receive reflected radiation in time, the CMOS sensor is required to have a high response speed and precision, for example, the response time of the CMOS sensor is required to be tens of nanoseconds.
In the conventional photodiode structure, the internal potential of the photodiode is flat, so that charge transfer mainly depends on diffusion movement, the transfer speed is low, and the transfer efficiency is low, thereby leading to image tailing. The charge transport channel in conventional photodiode structures may also have potential barrier and well problems, which may also lead to image smearing. For a traditional photodiode structure, the charge transfer efficiency directly affects the response speed and measurement accuracy of the photosensor.
In order to solve the problems of the conventional photodiode structure, a modulating electric field is usually generated in a non-uniform doping manner to accelerate the lateral transfer of charges in the prior art, but the non-uniform doping process is complex, and the difficulty of the control process of the production of the photodiode structure is high.
Disclosure of Invention
In the prior art, a modulating electric field is generated by adopting a non-uniform doping mode to accelerate the transverse transfer of charges, but the non-uniform doping process is complex, and the difficulty in controlling the production of the photodiode structure is high, so that a technical scheme is needed to be designed to solve the technical problems. In this context, embodiments of the present invention desirably provide a pixel cell, a sensor, and a sensing array.
In a first aspect of the embodiments of the present invention, there is provided a pixel unit including: a charge collection region for receiving radiation to generate photo-generated charge; a floating diffusion node for storing and outputting the photo-generated charge generated by the charge collection region; the transmission gate is connected between the charge collection region and the suspension diffusion node and is used for transferring photo-generated charges from the charge collection region to the suspension diffusion node; and the potential adjusting region is arranged at the periphery of the charge collecting region and is used for collecting photo-generated charges to one side of the charge collecting region, which is connected with the transmission gate.
In one embodiment of the present invention, the potential adjustment region is constituted by a polycrystalline resistor having a strip or block shape.
In one embodiment of the present invention, if the potential adjusting region is constituted by a plurality of bulk polycrystalline resistors, the plurality of bulk polycrystalline resistors are connected by a metal conductor, or there is no connection between the plurality of bulk polycrystalline resistors.
In one embodiment of the invention, a power supply is connected to the potential adjustment area; the potential adjustment region includes at least two sub-adjustment regions, wherein a junction of the at least two sub-adjustment regions is grounded. Optionally, at least two sub-adjustment regions are symmetrically arranged.
In one embodiment of the present invention, if the potential adjusting region is composed of a plurality of bulk polycrystalline resistors and metal conductors, the number of power sources is one, and the power sources are respectively connected to one end of at least two sub-adjusting regions near the transmission gate.
In one embodiment of the present invention, if the potential adjustment area is formed by a plurality of bulk polycrystalline resistors, and there is no connection between the plurality of bulk polycrystalline resistors, the number of power sources is plural, the power source voltages connected to different bulk polycrystalline resistors among the plurality of bulk polycrystalline resistors are different, and the power source voltage connected to the bulk polycrystalline resistor closer to the transfer gate is larger.
In one embodiment of the present invention, if the potential adjusting region is composed of a strip-shaped polycrystalline resistor, and the number of power supplies connected to the potential adjusting region is one, the potential adjusting region includes at least two sub adjusting regions, and the power supplies are respectively connected to one end of the at least two sub adjusting regions, which is close to the transmission gate; and the connection part of at least two sub-adjustment areas is grounded. Optionally, at least two sub-adjustment regions are symmetrically arranged.
In one embodiment of the present invention, the potential of the region where the potential adjustment region is closer to the transfer gate is lower.
In a second aspect of embodiments of the invention, there is provided a sensor comprising one or more pixel cells of any of the first aspects.
In a third aspect of embodiments of the invention, there is provided a sensing array comprising a plurality of sensors, which may be identical to a plurality of pixel cells as in any of the second aspects.
According to the technical scheme provided by the invention, the modulating electric field is formed through the electric potential adjusting area arranged at the periphery of the charge collecting area, so that photo-generated charges are directionally transferred under the influence of the modulating electric field, the transfer speed and the transfer efficiency are improved, the image tailing is avoided, and the response speed and the measurement accuracy of the photoelectric sensor are improved.
Drawings
The above, as well as additional purposes, features, and advantages of exemplary embodiments of the present invention will become readily apparent from the following detailed description when read in conjunction with the accompanying drawings. Several embodiments of the present invention are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which:
fig. 1A schematically shows a schematic structural diagram of an equivalent circuit of a pixel cell according to an embodiment of the present invention;
fig. 1B schematically shows a schematic diagram of potential variation trend within a charge collection region according to an embodiment of the present invention;
fig. 2A schematically shows a schematic structural diagram of an equivalent circuit of another pixel cell according to an embodiment of the invention;
fig. 2B schematically shows a schematic diagram of potential variation trends within another charge collection region according to an embodiment of the present invention;
fig. 3A schematically shows a structural schematic diagram of an equivalent circuit of a further pixel cell according to an embodiment of the invention;
fig. 3B schematically shows a schematic diagram of potential variation trend within a further charge collection region according to an embodiment of the present invention;
FIG. 4 schematically illustrates a schematic structural view of a sensor according to an embodiment of the present invention;
fig. 5 schematically shows a schematic structural diagram of a sensor array according to an embodiment of the present invention.
In the drawings, the same or corresponding reference numerals indicate the same or corresponding parts.
Detailed Description
The principles and spirit of the present invention will be described below with reference to several exemplary embodiments. It should be understood that these embodiments are presented merely to enable those skilled in the art to better understand and practice the invention and are not intended to limit the scope of the invention in any way. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The inventor finds that in the traditional photodiode structure, since the internal potential of the photodiode is flat, charge transfer mainly depends on diffusion movement, the transfer speed is low, and the transfer efficiency is low, so that image tailing can be caused, and the response speed and measurement accuracy of the photoelectric sensor are further affected. In order to solve the problems of the conventional photodiode structure, a modulating electric field is usually generated in a non-uniform doping manner to accelerate the lateral transfer of charges in the prior art, but the non-uniform doping process is complex, and the difficulty of the control process of the production of the photodiode structure is high.
In order to overcome the problems in the prior art, the invention provides a pixel unit, a sensor based on the pixel unit and a sensing array. The pixel unit includes: a charge collection region for receiving radiation to generate photo-generated charge; a floating diffusion node for storing and outputting the photo-generated charge generated by the charge collection region; the transmission gate is connected between the charge collection region and the suspension diffusion node and is used for transferring photo-generated charges from the charge collection region to the suspension diffusion node; and the potential adjusting region is arranged at the periphery of the charge collecting region and is used for collecting photo-generated charges to one side of the charge collecting region, which is connected with the transmission gate. According to the photoelectric sensor, the electric potential adjusting area arranged on the periphery of the charge collecting area forms a modulation electric field, so that photo-generated charges are directionally transferred under the influence of the modulation electric field, the transfer speed and the transfer efficiency are improved, image tailing is avoided, and the response speed and the measurement accuracy of the photoelectric sensor are improved.
The technical scheme provided by the embodiment of the invention is suitable for a charge transfer scene in any device or a charge collection scene in any device. For example, the technical solution provided by the embodiment of the present invention may be applied to a photo-generated charge transfer scene in a ranging device, or may be applied to a photo-generated charge transfer scene in a structured light device, or may be applied to a charge transfer scene in other devices, which is not limited in the embodiment of the present invention. The photodiode structure in the pixel unit according to the embodiment of the invention may be a front-illuminated type, a back-illuminated type, a stacked type or other types, and the embodiment of the invention is not limited.
Having described the basic principles and application scenarios of the present invention, various non-limiting embodiments of the present invention are specifically described below.
A pixel unit according to an exemplary embodiment of the present invention is described below in connection with the application scenario shown above. It should be noted that the above application scenario is only shown for the convenience of understanding the spirit and principle of the present invention, and the embodiments of the present invention are not limited in any way. Rather, embodiments of the invention may be applied to any scenario where applicable.
The pixel unit at least comprises a charge collecting region, a transmission gate, a suspension diffusion node and a potential adjusting region. Wherein the charge collection region is for receiving radiation to generate photo-generated charge; the floating diffusion node is used for storing and outputting the photo-generated charge generated by the charge collecting region; the transmission grid is connected between the charge collecting region and the suspension diffusion node and is used for transferring photo-generated charges from the charge collecting region to the suspension diffusion node; the potential adjusting region is arranged at the periphery of the charge collecting region and is used for collecting photo-generated charges to one side of the charge collecting region connected with the transmission gate. The pixel unit shown in fig. 1A forms a modulation electric field through the electric potential adjustment area arranged at the periphery of the charge collection area, so that photo-generated charges are directionally transferred under the influence of the modulation electric field, the transfer speed and the transfer efficiency are improved, image tailing is avoided, and the response speed and the measurement accuracy of the photoelectric sensor are improved.
In the embodiment of the invention, the distance between the subregion with the lowest potential and the transmission gate is nearest. In the embodiment of the invention, the closer the distance between the potential adjustment area and the transmission gate is, the lower the potential of the subarea is. In this way, the photogenerated charge can be concentrated to the lowest potential sub-region, which is then transferred to the transfer gate, thereby transferring speed and transfer efficiency.
In an embodiment of the present invention, the potential adjustment area further includes a ground point. In particular, the arrangement of the plurality of subregions of different electric potential in the direction close to the transmission gate may be realized such that the subregions of different electric potential are arranged in the direction from the ground point to the transmission gate.
In an embodiment of the present invention, the pixel unit further includes a power supply connected to the potential adjustment region. Optionally, the power supply is connected with the potential adjusting area through a wire, or the power supply, the transmission gate and the potential adjusting area are connected through a wire. If the power supply is one, the power supply is connected to one or more sub-regions in the potential adjustment area. If the power supply is plural and the sub-areas in the potential adjustment area are divided into plural groups, the voltages of the power supplies to which the sub-areas of the different groups in the potential adjustment area are connected are different. If the power supplies are multiple, and the sub-areas in the potential adjustment area are divided into multiple groups, the voltages of the power supplies connected with the sub-areas in the same group in the potential adjustment area are the same. Preferably, the same group of sub-regions are symmetrically arranged at the periphery of the charge collecting region.
In the embodiment of the invention, a power supply is connected with a potential adjusting area, and the potential adjusting area comprises at least two sub-adjusting areas, wherein the connection part of the at least two sub-adjusting areas is grounded. The embodiment of the invention does not limit that at least two sub-adjustment areas of the potential adjustment area are symmetrically arranged or asymmetrically arranged.
In the embodiment of the invention, the potential adjustment area is formed by a polycrystalline resistor, and the shape of the polycrystalline resistor comprises a strip shape or a block shape. The polycrystalline resistor (i.e., polysilicon resistor) is a resistor formed by a Poly layer of the gate of the MOS transistor, and thus may also be referred to as a Poly resistor; alternatively, ion implantation of a small dose of impurities can be used to realize the polycrystalline resistor, and a thin film (mask) can be added to realize the polycrystalline resistor. The technical process of the potential adjusting region formed by the polycrystalline resistor is simple, so that the problems of complex technical process, high difficulty in control process of photodiode structure production and the like caused by the fact that a modulating electric field is generated by adopting a non-uniform doping mode in the prior art can be effectively solved, and the manufacturing difficulty of the pixel unit is reduced. It should be noted that the potential adjustment region is not limited to be constituted by other resistors than the polycrystalline resistor or the potential adjustment region is constituted by other elements than the resistor in the embodiment of the present invention.
Several implementations of the potential adjustment area will be described below with reference to the accompanying drawings, respectively:
the implementation mode is as follows: the potential adjustment region is constituted by a strip-shaped polycrystalline resistor. Specifically, if the potential adjustment area is formed by a strip-shaped polycrystalline resistor, and the number of power supplies connected with the potential adjustment area is one, the potential adjustment area comprises at least two sub adjustment areas, and the power supplies are respectively connected with one end, close to the transmission gate, of the at least two sub adjustment areas. And the connection part of the at least two sub-adjustment areas is grounded. The embodiment of the invention does not limit that at least two sub-adjustment areas of the potential adjustment area are symmetrically arranged or asymmetrically arranged. Since the resistance value of the strip-shaped polycrystalline resistor changes in a linear manner, the potential in the charge collection region surrounded by the strip-shaped polycrystalline resistor in this implementation tends to decrease linearly in the charge transfer direction.
Illustrating one embodiment
Fig. 1A shows a schematic structural diagram of an equivalent circuit of a pixel unit according to an embodiment of the present invention. The pixel cell shown in FIG. 1A includes a charge collection region 101, a transfer regionGate 102, floating diffusion node 103, potential adjustment region 2, power supply V DD A grounding point. Wherein the potential regulating region 2 is a polycrystalline resistor; the potential adjustment area 2 is divided into 2 sub-areas, and two sub-adjustment areas are symmetrically arranged between the ground point and the connection point of the transmission gate 102 in the potential adjustment area 2; power supply V in the pixel unit DD Respectively connected to one end of two sub-adjustment regions in the potential adjustment region 2. The potential change in the charge transfer direction within the charge collection region 101 shown in fig. 1A has a linearly decreasing trend as shown in fig. 1B.
The implementation mode II is as follows: the potential adjustment region is constituted by a bulk polycrystalline resistor. The main implementation modes of the potential adjustment area formed by the bulk polycrystalline resistor are divided into the following two modes:
the first implementation mode: if the potential adjustment region is composed of a plurality of bulk polycrystalline resistors, the bulk polycrystalline resistors are connected by a metal conductor. Optionally, the metal conductor is connected between adjacent sub-regions in the potential adjustment region. Specifically, if the potential adjustment area is formed by a plurality of block-shaped polycrystalline resistors and metal conductors, the number of the power supplies is one, and the power supplies are respectively connected with one end, close to the transmission gate, of at least two sub adjustment areas. Compared with the resistance value of the polycrystalline resistor, the resistance value of the metal conductor is smaller, so that the potential change of the charge collecting area between the metal conductors is gentle, the potential change trend in the charge collecting area is slowed down, and the potential change in the charge collecting area is in a step descending trend. According to the embodiment of the invention, the potential change condition between adjacent subareas in the potential adjusting area can be regulated through the metal conductor, and the transfer of photo-generated charge is controlled.
Illustrating two
Fig. 2A shows a schematic structural diagram of an equivalent circuit of another pixel unit according to an embodiment of the present invention. The pixel unit shown in FIG. 2A comprises a charge collection region 101, a transfer gate 102, a floating diffusion node 103, a potential adjustment region, a metal conductor 5, a power supply V DD A grounding point. Wherein the potential adjustment region is a polycrystalline resistor; the potential adjustment region is divided into 6 sub-regions 4, and adjacent sub-regions 4 of the 6 sub-regions 4 are communicatedThe 6 subregions 4 are divided into two groups which are symmetrically arranged at the two sides of the potential regulating region; power supply V DD Respectively, to one end of the 2 sub-areas 4 closest to the transfer gate 102 among the 6 sub-areas 4.
The potential change in the charge transfer direction within the charge collection region 101 shown in fig. 2A has a stepwise decreasing trend as shown in fig. 2B. It should be understood that, with respect to the resistance value of the polycrystalline resistor, the resistance value of the metal conductors 5 is smaller, resulting in a smoother change in the potential of the charge collection region 101 between the metal conductors 5, which slows down the trend of the change in the potential in the charge collection region 101, so that the change in the potential in the charge collection region 101 is in a stepwise decreasing trend.
The second implementation mode: if the potential adjustment region is composed of a plurality of bulk polycrystalline resistors, no connection is provided between the plurality of bulk polycrystalline resistors. Further, if the potential adjustment area is formed by a plurality of bulk polycrystalline resistors, and there is no connection between the plurality of bulk polycrystalline resistors, the number of power supplies is plural, the power supply voltages connected to different bulk polycrystalline resistors among the plurality of bulk polycrystalline resistors are different, and the power supply voltage connected to the bulk polycrystalline resistor closer to the transfer gate is larger. The electric potential of the charge collecting area between the polycrystalline resistors is in a descending trend due to no connection object among the plurality of block-shaped polycrystalline resistors, and the electric potential of the charge collecting area not between the polycrystalline resistors is unchanged; meanwhile, the electric potential of the charge collecting areas among different blocks of polycrystalline resistors is different under the influence of different power supply voltages, so that the electric potential change in the charge collecting areas also has a step descending trend.
Illustrating three
Fig. 3A shows a schematic structural diagram of an equivalent circuit of yet another pixel unit according to an embodiment of the present invention. The pixel unit shown in FIG. 3A comprises a charge collecting region 101, a transfer gate 102, a floating diffusion node 103, a potential adjusting region, a power supply V DD Power supply V DD1 Power supply V DD2 . Wherein the potential adjustment region is a polycrystalline resistor; the potential adjustment area is divided into 6 subareas 4, the subareas 4 are mutually independent, and the subareas 4 are divided into three groups and symmetrically arranged in the electricityBoth sides of the potential regulating area; the three groups of subareas 4 are respectively connected with a power supply V DD Power supply V DD1 Power supply V DD2 Are connected; the voltage values of the power supplies connected to the sub-regions 4 of different groups in the charge transfer direction in the charge collection region 101 gradually increase, i.e. V DD >V DD1 >V DD2 。
The potential change in the charge transfer direction within the charge collection region 101 shown in fig. 3A has a stepwise decreasing trend as shown in fig. 3B. It will be appreciated that the potentials between the sub-regions 4 in the different sets differ such that the potential variation in the charge collection region 101 along the charge transfer direction is stepped down.
It should be noted that in both implementations, the potential of the charge collection region formed by the plurality of bulk polycrystalline resistors tends to decrease in steps, but the two causes of the step-down trend are different.
According to the pixel unit provided by the invention, the modulating electric field is formed through the electric potential adjusting area arranged at the periphery of the charge collecting area, so that photo-generated charges are directionally transferred under the influence of the modulating electric field, the transfer speed and the transfer efficiency are improved, the image tailing is avoided, and the response speed and the measurement accuracy of the photoelectric sensor are improved.
Referring to fig. 4, the present invention also provides a sensor of an exemplary implementation, the sensor including a plurality of pixel cells as shown in fig. 1A, or the sensor including a plurality of pixel cells as shown in fig. 2A, or the sensor including a plurality of pixel cells as shown in fig. 3A.
Referring to fig. 5, the present invention also provides a sensing array of an exemplary implementation, the sensing array including a plurality of the sensors shown in fig. 4, or the sensing array including a plurality of the pixel cells shown in fig. 1A, or the sensing array including a plurality of the pixel cells shown in fig. 2A, or the sensing array including a plurality of the pixel cells shown in fig. 3A. Alternatively, the sensing array may be an array of M rows and N columns, where M, N is a positive integer.
It should be noted that although several units/modules or sub-units/modules of the apparatus are mentioned in the above detailed description, this division is merely exemplary and not mandatory. Indeed, the features and functionality of two or more units/modules described above may be embodied in one unit/module in accordance with embodiments of the present invention. Conversely, the features and functions of one unit/module described above may be further divided into ones that are embodied by a plurality of units/modules.
Furthermore, although the operations of the methods of the present invention are depicted in the drawings in a particular order, this is not required to either imply that the operations must be performed in that particular order or that all of the illustrated operations be performed to achieve desirable results. Additionally or alternatively, certain steps may be omitted, multiple steps combined into one step to perform, and/or one step decomposed into multiple steps to perform.
While the spirit and principles of the present invention have been described with reference to several particular embodiments, it is to be understood that the invention is not limited to the disclosed embodiments nor does it imply that features of the various aspects are not useful in combination, nor are they useful in any combination, such as for convenience of description. The invention is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Claims (9)
1. A pixel cell, comprising:
a charge collection region for receiving radiation to generate photo-generated charge;
a floating diffusion node for storing and outputting the photo-generated charge generated by the charge collection region;
a transfer gate connected between the charge collection region and the floating diffusion node for transferring the photogenerated charge from the charge collection region to the floating diffusion node;
a potential adjustment region disposed at the periphery of the charge collection region for concentrating the photo-generated charge toward a side of the charge collection region connected to the transfer gate;
a power supply is connected with the potential adjustment area; the potential adjusting region comprises at least two sub-adjusting regions, the connection parts of the at least two sub-adjusting regions are grounded, and the at least two sub-adjusting regions are symmetrically arranged.
2. The pixel cell of claim 1, wherein the potential adjustment region is comprised of a poly resistor having a stripe or block shape.
3. The pixel cell of claim 2, wherein if the potential adjustment region is comprised of a plurality of bulk polycrystalline resistors, the plurality of bulk polycrystalline resistors are connected by a metal conductor or there is no connection between the plurality of bulk polycrystalline resistors.
4. The pixel cell of claim 1, wherein if the potential adjustment region is composed of a plurality of bulk polycrystalline resistors and metal conductors, the number of the power sources is one, and the power sources are respectively connected to one end of the at least two sub adjustment regions near the transfer gate.
5. The pixel cell according to claim 1, wherein if the potential adjustment region is constituted by a plurality of bulk polycrystalline resistors, and there is no connection between the plurality of bulk polycrystalline resistors, the number of the power sources is plural, power source voltages to which different bulk polycrystalline resistors among the plurality of bulk polycrystalline resistors are connected are different, and the power source voltage to which the bulk polycrystalline resistor closer to the transfer gate is connected is larger.
6. The pixel cell according to claim 2, wherein if the potential adjustment region is constituted by a strip-shaped polycrystalline resistor and the number of power sources connected to the potential adjustment region is one, the potential adjustment region includes at least two sub-adjustment regions, the power sources being connected to one end of the at least two sub-adjustment regions near the transfer gate, respectively; and is also provided with
The connection part of the at least two sub-adjustment areas is grounded.
7. The pixel cell according to claim 4, 5 or 6, wherein the potential adjustment region has a lower potential in a region closer to the transfer gate.
8. A sensor comprising a pixel cell according to any one of claims 1 to 7.
9. A sensor array comprising a plurality of pixel cells according to any one of claims 1 to 7 or a plurality of sensors according to claim 8.
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| CN201811399529.XA CN111211138B (en) | 2018-11-22 | 2018-11-22 | A pixel unit, sensor and sensing array |
| PCT/CN2019/110215 WO2020103594A1 (en) | 2018-11-22 | 2019-10-09 | Pixel unit, sensor and sensing array |
| US17/295,964 US12027539B2 (en) | 2018-11-22 | 2019-10-09 | Pixel unit, sensor and sensing array |
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| CN201811399529.XA CN111211138B (en) | 2018-11-22 | 2018-11-22 | A pixel unit, sensor and sensing array |
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2019
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| CN101211954A (en) * | 2006-12-29 | 2008-07-02 | 东部高科股份有限公司 | CMOS image sensor and its manufacturing method |
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| WO2020103594A1 (en) | 2020-05-28 |
| US12027539B2 (en) | 2024-07-02 |
| US20220005852A1 (en) | 2022-01-06 |
| CN111211138A (en) | 2020-05-29 |
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