CN111211043A - A drying method for improving wafer drying efficiency - Google Patents
A drying method for improving wafer drying efficiency Download PDFInfo
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- CN111211043A CN111211043A CN202010126052.9A CN202010126052A CN111211043A CN 111211043 A CN111211043 A CN 111211043A CN 202010126052 A CN202010126052 A CN 202010126052A CN 111211043 A CN111211043 A CN 111211043A
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Abstract
本发明公开了一种用于提升晶圆干燥效率的干燥方法，包括：步骤S1、将待干燥晶圆片置入晶圆容纳室内并使每个晶圆片均置入对应的洗涤槽内且相互之间间隔以形成晶圆片间隙；步骤S2、将恒温恒压气体供应器的输出端口与第一入口密封连接并使第一入口按照通气调整策略向干燥腔室内部通入恒温恒压气体以提高晶圆片干燥效率；步骤S3、惰性气体经第一入口沿经过晶圆片的至少三条气体流通路径流动至干燥腔室内远离第一入口的一侧，并于该一侧流入夹层区的内部；步骤S4、惰性气体在夹层区内远离第一入口一侧流入至靠近第一入口另一侧后经由第一出口排出。本发明通过夹层区的设计以及气体流通路径的改善，提高了晶圆干燥效率。
The present invention discloses a drying method for improving wafer drying efficiency, comprising: step S1, placing the wafers to be dried into a wafer accommodating chamber and placing each wafer in a corresponding washing tank and spaced apart from each other to form a wafer gap; step S2, sealingly connecting the output port of the constant temperature and constant pressure gas supply to the first inlet and making the first inlet pass the constant temperature and constant pressure gas into the drying chamber according to the ventilation adjustment strategy In order to improve the drying efficiency of the wafer; step S3, the inert gas flows through the first inlet along at least three gas circulation paths passing through the wafer to the side of the drying chamber away from the first inlet, and flows into the interlayer area on this side. Inside; Step S4, the inert gas flows into the interlayer area from one side away from the first inlet to the other side close to the first inlet, and then is discharged through the first outlet. The invention improves the wafer drying efficiency through the design of the interlayer area and the improvement of the gas flow path.
Description
Technical Field
The invention relates to the technical field of wafer drying, in particular to a drying method for improving wafer drying efficiency.
Background
In the demand of semiconductor wafer cleaning technology, the wafer drying technology is indispensable, and different wafer products have been developed so far. The wafer drying is an action ending at the end of a wet cleaning process, the control of effectively removing residual moisture on the surface of the wafer and the surface cleanliness is required to be ensured, continuous optimization of a drying method is carried out to improve the drying efficiency, the key point that special attention is required for developing wafer cleaning equipment and technology is required, various methods are used for the wafer drying process, but the existing drying method cannot effectively carry out batch drying on wafers within a specified time, so that the establishment of the wafer drying method with effective drying efficiency is an aspect that the existing wafer wet cleaning technology needs to be improved.
Disclosure of Invention
The invention aims to provide a wafer drying method with high drying efficiency, which improves the drying efficiency of a wafer through the design of an interlayer region and the improvement of a gas circulation path.
In order to achieve the purpose, the invention provides the following technical scheme: a drying method for improving wafer drying efficiency is provided, and a wafer drying device is provided and comprises a drying chamber, a wafer accommodating chamber for accommodating a wafer and a constant-temperature constant-pressure gas supply, wherein the drying chamber is used for retaining a gas and comprises a first inlet, a first outlet and an inner wall structure extending from the first inlet to the first outlet, and the inner wall structure comprises an interlayer region; the wafer accommodating chamber is arranged in the drying chamber and comprises a plurality of washing tanks matched with the wafers; the constant temperature and pressure gas supplier is used for providing inert gas with constant temperature and enabling the inert gas to flow along a gas circulation path formed inside the drying chamber under constant pressure;
the drying method comprises the following steps:
step S1, placing the wafers to be dried into the wafer accommodating chamber, and placing each wafer into a corresponding washing tank at intervals to form a wafer gap;
step S2, hermetically connecting the output port of the constant-temperature and constant-pressure gas supply device with the first inlet, and introducing constant-temperature and constant-pressure gas into the drying chamber through the first inlet according to a ventilation adjustment strategy to improve the wafer drying efficiency;
step S3, inert gas flows to one side far away from the first inlet in the drying chamber along at least three gas flow paths passing through the wafer through the first inlet, and flows into the interlayer region from the one side;
in step S4, the inert gas flows into the interlayer region from the first inlet to the other side close to the first inlet and is discharged through the first outlet.
Preferably, the ventilation adjusting strategy comprises an on-off time control step for adjusting the on-off time of the inert gas sprayed into the drying chamber and a gas flow angle adjusting step for adjusting the angle of the inert gas sprayed into the drying chamber.
Preferably, the on-off time control step is set according to the wetting degree of the wafer, and the gas flow angle adjusting step is set according to the diameter of the wafer.
Preferably, the ventilation time is set to be 1 second, and the ratio of the ventilation time to the air-off time is 1-10; the jet angle of the air flow is set to be 100-130 degrees of bidirectional expansion based on the vertical central line of the wafer to spray the wafer.
Preferably, the interlayer region is provided with two openings, the two openings comprise a second inlet arranged on one side far away from the first inlet in the drying chamber and a second outlet arranged on one side far away from the second inlet in the drying chamber, and the second outlet is communicated with the first outlet.
Preferably, the at least three gas flow paths include a first path from the first inlet to the bottom opening of the wafer accommodating chamber through the wafer gap, a second path from the first inlet to the bottom opening of the wafer accommodating chamber through the wafer washing tank, a third path from the first inlet to the bottom opening of the wafer accommodating chamber through the outer sidewall of the wafer accommodating chamber, and a fourth path from the first inlet to the second inlet of the interlayer region through the outer sidewall of the interlayer region.
Preferably, the drying method further comprises the steps of arranging a quick exhaust pipeline at the first outlet, connecting the other end of the quick exhaust pipeline with an air exhaust device, and exhausting air by the air exhaust device to form an outward traction pressure so that the hot nitrogen in the drying chamber flows along the air circulation path in an accelerated mode and is exhausted to the designated exhaust area through the quick exhaust pipeline.
Preferably, the drying method further includes disposing a vibrating structure at the bottom of the wafer accommodating chamber, which can make the wafer accommodating chamber slightly swing around a support, and making the vibrating structure slightly swing in the process of step S3 to continuously break the surface tension of the water molecules in the wafer with high aspect ratio pore structures and the high aspect ratio pore structures through the interaction of hot nitrogen and isopropanol, so that the water molecules in the depletion region are continuously extracted.
Preferably, the drying method further comprises the step of designing an anodic oxidation heat insulation layer which maintains thermal kinetic energy stable to hot nitrogen on the outer side wall of the drying chamber, wherein an auxiliary tubular heater is embedded in the anodic oxidation heat insulation layer for auxiliary heating; and electronic thermometers for detecting the temperature are respectively arranged on the outer side wall of the drying chamber and the inner side wall of the drying chamber, and the heating of the auxiliary tubular heater is controlled by detecting the temperature difference corresponding to the inner side and the outer side in a linkage manner, so that the control and the regulation of the temperature of the hot nitrogen in the drying chamber are realized.
Preferably, the drying method further comprises designing the bottom of the drying chamber to be a conical structure with a downward inclined angle so that the isopropanol liquid can form a spiral flow distribution when being discharged, and the isopropanol molecules can be uniformly adhered to the surface of the wafer.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, the drying efficiency of the wafer is improved through the design of the interlayer region and the improvement of the gas flow path, the buffer layer effect of preventing the heated nitrogen from being accidentally exposed to the exhaust pipeline region is achieved through the arrangement of the interlayer region, the utilization efficiency of the hot nitrogen is improved, and the four gas flow paths passing through the wafer are arranged to respectively dry the surface of the wafer, the edge of the wafer accommodating chamber and the outer side wall of the interlayer region, so that the drying efficiency of the wafer is effectively improved.
Drawings
FIG. 1 is a schematic view of a wafer drying apparatus according to the present invention;
FIG. 2 is a schematic view of a gas flow path according to the present invention;
FIG. 3 is a schematic view of a wafer-holding chamber according to the present invention;
FIG. 4 is a schematic cross-sectional view taken along the line B-B of FIG. 3 according to the present invention;
FIG. 5 is a schematic structural view of an anodic oxidation insulation layer according to the present invention;
FIG. 6 is a schematic view showing the structure of the flow of the heated nitrogen gas in the anodic oxidation insulation layer according to the present invention;
FIG. 7 is a schematic view of the connection of the anodic oxidation insulation layer with the vibrating structure and the wafer receiving chamber in the present invention;
FIG. 8 is a schematic view of the connection between the vibrating structure and the wafer chamber according to the present invention;
FIG. 9 is a schematic view of the driving mechanism of the present invention;
FIG. 10 is a schematic structural view of a vibrating structure according to the present invention;
fig. 11 is a schematic view of a structure state of the wafer in the wafer chamber driven by the vibration structure to slightly swing according to the present invention.
In the figure: 1. a drying chamber; 101. a first inlet; 102. a first outlet; 103. an interlayer region; 1031. a second inlet; 1032. a second outlet; 104. a third inlet; 105. a third outlet; 106. a tapered structure; 2. a wafer accommodating chamber; 201. a washing tank; 3. an exhaust duct; 301. a gas hold-up zone; 4. a vibrating structure; 401. a support assembly; 402. a drive mechanism; 4021. a drive motor; 4022. a wheel pendulum coupling adapter; 4023. rotating the disc; 4024. a connecting rod; 4025. a fixing plate; 4026. connecting blocks; 4027. a vertical guide rail; 4028. a traction block; 5. a wafer; 6. an anodic oxidation heat-insulating layer; 601. an auxiliary tubular heater.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1-2, according to a first embodiment of the present invention, a drying method for improving wafer drying efficiency is provided, which includes a drying chamber 1, a wafer accommodating chamber 2 for accommodating a wafer, and a constant temperature and pressure gas supplier, wherein the drying chamber 1 is configured to retain a gas, the drying chamber 1 includes a first inlet 101 and a first outlet 102, and an inner wall structure extending from the first inlet 101 to the first outlet 102, and the inner wall structure includes an interlayer region 103; the wafer accommodating chamber 2 is arranged inside the drying chamber 1 and comprises a plurality of washing tanks 201 matched with the wafers 5; the constant temperature and pressure gas supplier is used for providing inert gas with constant temperature and enabling the inert gas to flow along a gas circulation path formed inside the drying chamber 1 under constant pressure;
the drying method comprises the following steps:
step S1, placing the wafers 5 to be dried into the wafer accommodating chamber 2, and placing each wafer 5 into the corresponding washing tank 201 with a space therebetween to form a wafer 5 gap;
step S2, hermetically connecting the output port of the constant-temperature and constant-pressure gas supply device with the first inlet 101, and introducing constant-temperature and constant-pressure gas into the drying chamber 1 through the first inlet 101 according to a ventilation adjustment strategy to improve the drying efficiency of the wafer 5;
step S3, the inert gas flows into the drying chamber 1 along at least three gas flow paths passing through the wafer 5 through the first inlet 101 to a side away from the first inlet 101, and flows into the interlayer region 103 at the side;
in step S4, the inert gas flows into the interlayer region 103 from the first inlet 101 to the other side close to the first inlet 101 and then is discharged through the first outlet 102.
The buffer layer effect that heating nitrogen gas is not exposed to the exhaust pipeline area accidentally is achieved through the arrangement of the interlayer area 103, the utilization efficiency of the heating nitrogen gas is improved, and the four gas flow paths passing through the wafer 5 are arranged to dry the surface of the wafer 5, the edge of the wafer accommodating chamber 2 and the outer side wall of the interlayer area 103 respectively, so that the drying efficiency of the wafer 5 is effectively improved.
Preferably, the ventilation adjusting strategy comprises an on-off time control step for adjusting the on-off time of the inert gas sprayed into the drying chamber 1 and a gas flow angle adjusting step for adjusting the angle of the inert gas sprayed into the drying chamber 1.
Preferably, the on-off time control step is set according to the wetting degree of the wafer 5, and the gas flow angle adjustment step is set according to the diameter of the wafer 5.
Preferably, the ventilation time is set to be 1 second, and the ratio of the ventilation time to the air-off time is 1-10; the jet angle of the air flow is set to be 100-130 degrees of bidirectional expansion based on the vertical central line of the wafer 5 to spray the wafer 5.
Preferably, the injection method of the heated nitrogen gas needs to be configured with a groove body size suitable for the size of the wafer and nitrogen gas nozzles arranged in an array, the nitrogen gas nozzles arranged in the array can be installed on a door plate of a symmetrically opening and closing link device, and the nitrogen gas nozzles can be installed at the lower end of the opening and closing door plate, so that the unnecessary configuration of relative space is reduced. The nitrogen nozzle is arranged at a position exceeding the highest point of the wafer 5, so that an aerosol line sprayed and heated by the nitrogen nozzle can be completely sprayed on the wafer 5. The spraying range of the nitrogen nozzle is controlled to be 100-130 degrees in total by the bidirectional expansion of the central line of the nozzle, and the symmetrical left and right side nozzles are utilized to form a spraying range with the spraying ranges of the nozzles at the two sides being intersected, so that the complete wafer 5 can be effectively covered when the nitrogen nozzle is used for spraying the heated nitrogen.
Preferably, the interlayer region 103 has two openings, including a second inlet 1031 disposed at a side of the drying chamber 1 far from the first inlet 101 and a second outlet 1032 disposed at a side of the drying chamber 1 far from the second inlet 1031, and the second outlet 1032 is communicated with the first outlet 102.
As shown in fig. 2, the at least three gas flow paths include a first path from the first inlet 101 to the bottom opening of the wafer accommodating chamber 2 through the gap of the wafer 5, a second path from the first inlet 101 to the bottom opening of the wafer accommodating chamber 2 through the wafer 5 washing tank 201, a third path from the first inlet 101 to the bottom opening of the wafer accommodating chamber 2 through the outer sidewall of the wafer accommodating chamber 2, and a fourth path from the first inlet 101 to the second inlet 1031 of the sandwich region 103 through the outer sidewall of the sandwich region 103.
The drying method further comprises the steps of arranging the quick exhaust pipeline 3 at the first outlet 102, connecting the other end of the quick exhaust pipeline 3 with an air suction device, and performing air suction through the air suction device to form an outward traction pressure so that the hot nitrogen in the drying chamber 1 flows along the gas circulation path in an accelerated mode and is exhausted to a designated exhaust area through the quick exhaust pipeline 3.
Under the requirement of enhancing and optimizing the flow path of the air flow and the liquid flow, the interference of the shape configuration of various components in the tank body on the air flow and the liquid flow needs to be reduced, the arrangement of the exhaust pipeline 3 and the air extraction equipment enhances the flow field distribution, and the exhaust efficiency and the drying efficiency are greatly improved.
By using the portion joined to the outer tank body of the drying chamber 1, a gas stagnation area 301 for buffering is arranged, and a continuous discharge path formed by the interlayer area 103 → the gas stagnation area 301 → the exhaust duct 3 is formed, and instead of directly joining the exhaust duct 3 to the outer tank body as in the conventional case, a discharge path having a buffering effect with the gas stagnation area 301 is adopted to ensure that the gas flow can effectively form a specific exhaust path for flowing.
In this embodiment, the drying method further includes designing the bottom of the drying chamber 1 to have a tapered structure 106 with a downward inclined angle so that the isopropanol liquid can form a spiral flow distribution when being discharged, so that the isopropanol molecules can be uniformly adhered to the surface of the wafer.
As shown in fig. 3 and 4, under the influence of the pumping device and the exhaust duct 3, the direction of the drying flow field in the gap between the wafers 5 is changed, so that the contact time between the wafer surface and the hot nitrogen is increased, and the exhaust efficiency and the drying efficiency are improved.
As shown in fig. 5, the second embodiment of the present invention is different from the first embodiment in that an anodic oxidation insulation layer 6 for maintaining the thermal kinetic energy of the stable hot nitrogen is designed on the outer sidewall of the drying chamber 1, and an auxiliary tubular heater 601 is embedded in the anodic oxidation insulation layer 6 for auxiliary heating; furthermore, electronic thermometers for detecting temperature are respectively arranged on the outer side wall of the drying chamber 1 and the inner side wall of the drying chamber 1, and the auxiliary tubular heater 601 is controlled to heat by detecting the temperature difference corresponding to the inner side and the outer side in a linkage manner, so that the temperature of the hot nitrogen in the drying chamber 1 is controlled and adjusted. The auxiliary tubular heater 601 can provide the thermal kinetic energy lost in the drying process for the hot nitrogen gas, and avoid the uneven drying of the upper and lower ends of the wafer 5 caused by the reduction of the temperature of the hot nitrogen gas from top to bottom.
As shown in fig. 6, which is a schematic view of the air flow structure of the nitrogen heated by the anodic oxidation insulating layer 6 in the present invention, the thermal energy provided by the insulating layer to the hot nitrogen diffuses from the sidewall of the drying chamber 1 to the inside of the drying chamber 1, and at the same time, the moisture on the wafer 5 is volatilized outside the wafer 5 under the action of the hot nitrogen.
The drying chamber 1 further comprises a third inlet 104 for introducing isopropyl alcohol liquid into the drying chamber 1 and a third outlet 105 for discharging isopropyl alcohol, and the third inlet 104 and the third outlet 105 are both disposed on a side of the drying chamber 1 far from the first inlet 101. Opening the third inlet 104 to introduce the isopropanol liquid into the drying chamber 1 under the state that the third outlet 105 is closed until each wafer 5 in the wafer accommodating chamber 2 is completely immersed in the isopropanol liquid, closing the third inlet 104 for 1-3min to ensure that isopropanol molecules are completely compatible with water molecules on the wafer 5, opening the third outlet 105 to ensure that the isopropanol liquid is completely discharged, and closing the third outlet 105; then, the output port of the constant temperature and pressure gas supplier is hermetically connected to the first inlet 101, and the first inlet 101 is used for introducing constant temperature and pressure hot nitrogen gas into the drying chamber 1 according to the ventilation adjustment strategy, so that the moisture on the surface of the wafer 5 is removed before the volatilization point by utilizing the two-phase fusion and phase change of the hot nitrogen gas phase and the isopropanol liquid phase.
As shown in fig. 7 to 8, the third embodiment of the present invention is different from the first embodiment in that a vibrating structure 4 capable of slightly swinging the wafer accommodating chamber 2 around a support is provided at the bottom of the wafer accommodating chamber 2, and is slightly swung during the step S3 to sufficiently dry the contact portion between the wafer 5 and the wafer accommodating chamber 2, thereby avoiding a dead drying zone.
As shown in fig. 9-11, the vibrating structure 4 includes a supporting module 401 for supporting the wafer accommodating chamber 2 and a driving mechanism 402 for driving the supporting module 401 to slightly swing, the driving mechanism 402 includes a pendulum coupling adapter 4022 and a driving motor 4021 for driving the pendulum coupling adapter 4022 to rotate, the pendulum coupling adapter 4022 is connected to a rotating disc 4023 for driving the rotating disc 4023 to rotate, the rotating disc 4023 is fixedly connected to a connecting rod 4024, an upper end of the connecting rod 4024 is rotatably connected to a fixing plate 4025, two ends of the fixing plate 4025 are respectively provided with a connecting block 4026, a traction block 4028 fixedly connected to the supporting module 401 is fixedly mounted at a top end of the fixing plate 4025, and the connecting blocks 4026 are respectively connected to the vertical guide rails 4027 in a sliding manner; the wheel pendulum coupling adapter 4022 drives the adapter plate to rotate through the driving motor 4021, and then drives the traction block 4028 on the fixing plate 4025 to move up and down through the adapter plate, and drives one side of the support assembly 401 to swing up and down through the traction block 4028.
The vibration structure 4 provides a supporting function to execute micro-amplitude swinging by designing a swinging motion mechanism, so that the wafer 5 placed in the drying device can slightly swing, water molecules in the specially patterned high-depth-to-width ratio structure can continuously destroy the surface tension of the water molecules and the high-depth-to-width ratio pore structure under the interaction of heating nitrogen and isopropanol in the drying process, and water molecules in the capillary phenomenon of a depletion region are reversely and continuously separated out to perform the drying reaction of water molecule replacement.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (10)
1. A drying method for improving wafer drying efficiency is characterized in that a wafer drying device is provided, the wafer drying device comprises a drying chamber, a wafer accommodating chamber for accommodating a wafer and a constant-temperature constant-pressure gas supply device, the drying chamber is configured for retaining a gas, the drying chamber comprises a first inlet and a first outlet, and an inner wall structure extending from the first inlet to the first outlet, and the inner wall structure comprises an interlayer area; the wafer accommodating chamber is arranged in the drying chamber and comprises a plurality of washing tanks matched with the wafers; the constant temperature and pressure gas supplier is used for providing inert gas with constant temperature and enabling the inert gas to flow along a gas circulation path formed inside the drying chamber under constant pressure;
the drying method comprises the following steps:
step S1, placing the wafers to be dried into the wafer accommodating chamber, and placing each wafer into a corresponding washing tank at intervals to form a wafer gap;
step S2, the output port of the constant temperature and pressure gas supply device is hermetically connected with the first inlet, and the first inlet is used for introducing constant temperature and pressure inert gas into the drying chamber according to the ventilation adjustment strategy;
step S3, inert gas flows to one side far away from the first inlet in the drying chamber along at least three gas flow paths passing through the wafer through the first inlet, and flows into the interlayer region from the one side;
in step S4, the inert gas flows into the interlayer region from the first inlet to the other side close to the first inlet and is discharged through the first outlet.
2. A drying method for improving the wafer drying efficiency as claimed in claim 1, wherein the ventilation adjusting strategy comprises an on-off time control step for adjusting the on-off time of the inert gas sprayed into the drying chamber and a gas flow angle adjusting step for adjusting the angle of the inert gas sprayed into the drying chamber.
3. The drying method as claimed in claim 2, wherein the on-off time control step is set according to the wetting degree of the wafer, and the gas flow angle adjustment step is set according to the diameter of the wafer.
4. A drying method for improving wafer drying efficiency as claimed in claim 3, wherein the ventilation time is set to 1 second, and the ratio of the ventilation time to the gas-off time is 1-10; the jet angle of the air flow is set to be 100-130 degrees of bidirectional expansion based on the vertical central line of the wafer to spray the wafer.
5. A drying method for improving wafer drying efficiency as recited in claim 1, wherein the interlayer region has two openings, including a second inlet disposed on a side of the drying chamber far from the first inlet and a second outlet disposed on a side of the drying chamber far from the second inlet, the second outlet being in communication with the first outlet.
6. A drying method for improving wafer drying efficiency as set forth in any one of claims 1-5 wherein said at least three gas flow paths include a first path from the first inlet to the bottom opening of the wafer-receiving chamber through the wafer gap, a second path from the first inlet to the bottom opening of the wafer-receiving chamber through the wafer sink, a third path from the first inlet to the bottom opening of the wafer-receiving chamber through the outer sidewall of the wafer-receiving chamber, and a fourth path from the first inlet to the second inlet of the interlayer region through the outer sidewall of the interlayer region.
7. A drying method for improving the drying efficiency of a wafer according to any one of claims 1 to 5, wherein the drying method further comprises providing a fast exhaust duct at the first outlet, connecting the other end of the fast exhaust duct with an air pumping device, and pumping by the air pumping device to form an outward pulling pressure so that the hot nitrogen gas in the drying chamber is accelerated along the gas flow path and exhausted through the fast exhaust duct.
8. A drying method for improving wafer drying efficiency as claimed in any one of claims 1-5, wherein the drying method further comprises disposing a vibrating structure at the bottom of the wafer-holding chamber for slightly swinging the wafer-holding chamber around a support, and making it slightly swing during step S3 to break the surface tension of the pore structure of the water molecules in the pattern wafer so as to make the water molecules in the pore structure to be extracted.
9. A drying method for improving the drying efficiency of wafers according to any one of claims 1 to 5, characterized in that the drying method further comprises designing an anodic oxidation insulation layer with thermal kinetic energy stable to heat nitrogen gas on the outer side wall of the drying chamber, and embedding an auxiliary type tubular heater in the anodic oxidation insulation layer for auxiliary heating; and electronic thermometers for detecting the temperature are respectively arranged on the outer side wall of the drying chamber and the inner side wall of the drying chamber, and the heating of the auxiliary tubular heater is controlled by detecting the temperature difference corresponding to the inner side and the outer side in a linkage manner, so that the control and the regulation of the temperature of the hot nitrogen in the drying chamber are realized.
10. A drying method for improving the wafer drying efficiency according to any one of claims 1 to 5, wherein the drying method further comprises designing the bottom of the drying chamber to have a tapered structure with a downward inclined angle so that the isopropanol liquid can form a spiral flow distribution when being discharged, and the isopropanol molecules can be uniformly adhered on the surface of the wafer.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112038273A (en) * | 2020-08-26 | 2020-12-04 | 厦门英惟达智能科技有限公司 | A wafer reclaiming mechanism and a wafer cleaning machine using the same |
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| CN108831849A (en) * | 2018-06-25 | 2018-11-16 | 清华大学 | Wafer drying device and drying means based on hot kalimeris brother Buddhist nun effect |
| CN209896033U (en) * | 2019-07-05 | 2020-01-03 | 北京北方华创微电子装备有限公司 | Buffer chamber |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112038273A (en) * | 2020-08-26 | 2020-12-04 | 厦门英惟达智能科技有限公司 | A wafer reclaiming mechanism and a wafer cleaning machine using the same |
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