CN111193169A - Ultraviolet laser based on twin crystal structure - Google Patents
Ultraviolet laser based on twin crystal structure Download PDFInfo
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- CN111193169A CN111193169A CN202010129107.1A CN202010129107A CN111193169A CN 111193169 A CN111193169 A CN 111193169A CN 202010129107 A CN202010129107 A CN 202010129107A CN 111193169 A CN111193169 A CN 111193169A
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- 239000013078 crystal Substances 0.000 title claims abstract description 139
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910017502 Nd:YVO4 Inorganic materials 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 7
- 238000005086 pumping Methods 0.000 description 17
- 230000000694 effects Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 229910009372 YVO4 Inorganic materials 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08072—Thermal lensing or thermally induced birefringence; Compensation thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/0813—Configuration of resonator
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
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Abstract
The invention discloses an ultraviolet laser based on a double-crystal structure, which comprises: the first collimating lens group and the second collimating lens group are used for carrying out collimating treatment and/or focusing treatment on the first pump beam and the second pump beam; the first laser crystal and the second laser crystal are used for receiving the first pump beam and the second pump beam and outputting first fundamental frequency light and second fundamental frequency light; the acousto-optic Q-switch is used for receiving the first fundamental frequency light and the second fundamental frequency light and outputting first pulse fundamental frequency light and second pulse fundamental frequency light; the frequency doubling crystal is used for receiving the first pulse base frequency light and the second pulse base frequency light and outputting frequency doubling light; and the sum frequency crystal is used for receiving the first pulse base frequency light, the second pulse base frequency light and the frequency doubling light and outputting the sum frequency light. The ultraviolet laser disclosed by the invention is provided with the relatively long optical cavity, and the beam waist positions of the first pulse fundamental frequency light and the second pulse fundamental frequency light are adjusted to be positioned near the input end face of the frequency doubling crystal, so that the frequency doubling efficiency is further improved.
Description
Technical Field
The invention relates to the field of laser, in particular to an ultraviolet laser based on a double-crystal structure.
Background
The laser as a novel light source has the characteristics of good directivity, high brightness, good monochromaticity, high energy density and the like. The laser industry based on laser is developed rapidly in the world, and is now widely applied to the aspects of industrial production, communication, information processing, medical health, military, cultural education, scientific research and the like. The development and application of all-solid-state uv lasers is currently one of the most interesting highlights.
Along with the increase of the demand of the industry on the high-power all-solid-state ultraviolet laser, the output power upper limit of the high-power all-solid-state ultraviolet laser is always improved due to the continuous appearance of novel nonlinear materials and the continuous improvement of material performance, but some problems still exist in the development of the high-power all-solid-state ultraviolet laser and need to be solved. The main problem faced by the current high-power ultraviolet laser technology industry and commercialization is the thermal effect management problem under high-power pumping. Due to the change of the refractive index of each space position of the crystal caused by the thermal lens effect, the oscillating light beam which propagates back and forth along the axis of the resonant cavity deviates from the original propagation direction due to refraction when passing through the crystal. The crystal is equivalent to a lens, so that additional phase delay is generated in the oscillating light, the self-reproduction of an oscillating light mode is influenced, the instability of the output power and the coupling among multiple modes are finally caused, the improvement of the laser power is limited, and the performance of the solid laser is seriously influenced.
Increasing the pump light power inevitably leads to severe thermal lensing, while high power laser designs achieve as large a mode volume as possible, enabling efficient extraction of energy from the active species. A large mode volume means a larger intracavity transmitted beam radius and a longer optical cavity length. And the efficiency of toggle frequency doubling is improved when the radius of the light beam is too large. Therefore, a contradiction and restriction relationship is formed between high-power pumping with large mode volume and high-efficiency frequency doubling, which is a great resistance of the ultraviolet laser to the development of higher power.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the ultraviolet laser based on the double-crystal structure can be provided with a relatively long optical cavity, and the beam waist positions of the first pulse fundamental frequency light and the second pulse fundamental frequency light can be positioned near the input end face of the frequency doubling crystal through adjustment, so that the frequency doubling efficiency is further improved.
In a first aspect, an embodiment of the present invention provides an ultraviolet laser based on a bimorph structure, including: the device comprises a first pump source and a second pump source, wherein the first pump source and the second pump source are symmetrically arranged, the first pump source is used for generating a first pump beam, and the second pump source is used for generating a second pump beam;
the first collimating lens group is arranged between the first pumping source and the second pumping source and is used for collimating and/or focusing the first pumping beam;
the second collimating lens group is arranged between the first collimating lens group and the second pumping source and is used for collimating and/or focusing the second pumping beam;
the first laser crystal is used for receiving the first pump beam and outputting first fundamental frequency light;
the second laser crystal is used for receiving the second pump beam and outputting second fundamental frequency light;
the acousto-optic Q-switch is used for receiving the first fundamental frequency light and the second fundamental frequency light and outputting first pulse fundamental frequency light and second pulse fundamental frequency light;
the frequency doubling crystal is used for receiving the first pulse base frequency light and the second pulse base frequency light and outputting frequency doubling light;
and the sum frequency crystal is used for receiving the first pulse base frequency light, the second pulse base frequency light and the frequency doubling light and outputting the sum frequency light.
The ultraviolet laser based on the double-crystal structure provided by the embodiment of the invention at least has the following beneficial effects: the optical cavity with relative long length is arranged, and the beam waist positions of the first pulse fundamental frequency light and the second pulse fundamental frequency light can be positioned near the input end face of the frequency doubling crystal through adjustment, so that the frequency doubling efficiency is further improved.
According to other embodiments of the present invention, the ultraviolet laser based on the twin crystal structure, the first collimating lens group includes a first plano-convex lens, a second plano-convex lens;
the convex surface of the first plano-convex lens and the convex surface of the second plano-convex lens are symmetrically arranged;
the second collimating lens group comprises a third plano-convex lens and a fourth plano-convex lens;
the convex surface of the third plano-convex lens and the convex surface of the fourth plano-convex lens are symmetrically arranged.
According to the ultraviolet laser based on the double-crystal structure, the first laser crystal and the second laser crystal are arranged in an axial symmetry mode and are spaced by 5-20 mm.
According to other embodiments of the present invention, the ultraviolet laser based on the twin crystal structure further includes a semiconductor refrigerator for controlling the operating temperature of the frequency doubling crystal and the sum frequency crystal.
According to the ultraviolet laser based on the twin-crystal structure, according to other embodiments of the invention, the sum frequency crystal output end is provided with a brewster end face;
the Brewster end face is used for refracting and separating the first pulse fundamental frequency light, the second pulse fundamental frequency light, the frequency doubling light and the frequency summation light.
Ultraviolet lasers based on a bimorph structure according to further embodiments of the present invention further comprise: the first reflector, the second reflector and the third reflector;
the first reflector and the second reflector are used for reflecting the first fundamental frequency light and the second fundamental frequency light, so that the first fundamental frequency light and the second fundamental frequency light are transmitted to the acousto-optic Q-switch and output the first pulse fundamental frequency light and the second pulse fundamental frequency light;
the third reflector is used for reflecting the first pulse fundamental frequency light and the second pulse fundamental frequency light.
Ultraviolet lasers based on a bimorph structure according to further embodiments of the present invention further comprise: a fourth reflector, a fifth reflector and a sixth reflector;
the fourth reflector and the fifth reflector are used for reflecting the first pulse fundamental frequency light and the second pulse fundamental frequency light to the frequency doubling crystal;
the sixth reflector is used for enabling the first pulse fundamental frequency light and the second pulse fundamental frequency light to transmit the frequency doubling crystal for reflection and to transmit the frequency doubling crystal again for generating the frequency doubling light.
According to the ultraviolet laser based on the twin crystal structure, the sum frequency crystal receives the frequency doubling light, the first pulse base frequency light and the second pulse base frequency light and carries out II-type phase matching so as to output the sum frequency light.
According to the ultraviolet laser based on the twin-crystal structure, the surfaces of the first reflecting mirror, the second reflecting mirror, the third reflecting mirror, the fourth reflecting mirror, the fifth reflecting mirror and the sixth reflecting mirror are provided with high-reflection films and high-transmission films;
the high-reflection film is used for reflecting light with the wavelength of 1064nm and/or 532 nm;
the high-transmittance film is used for transmitting light of 808nm and/or 880 nm.
According to further embodiments of the present invention, the ultraviolet laser based on a bimorph structure, the first laser crystal and the second laser crystal include: nd is YVO4, Nd is YAG, Nd is YLF or Nd is GdVO 4;
the doping concentration of the first laser crystal and the second laser crystal is 0.1% -0.3%.
Drawings
FIG. 1 is a schematic structural diagram of an ultraviolet laser based on a bimorph structure in an embodiment of the present invention;
FIG. 2 is a schematic cavity of an ultraviolet laser based on a bimorph structure according to an embodiment of the present invention;
fig. 3 is a schematic diagram of an optical path structure of an ultraviolet laser based on a bimorph structure in the embodiment of the present invention.
Description of reference numerals:
reference numerals: 1. a first pump source; 2. a second pump source; 3. a first plano-convex lens; 4. a second plano-convex lens; 5. a third plano-convex lens; 6. a fourth plano-convex lens; 7. a first reflector; 8. a second reflector; 9. a fourth mirror; 10. a fifth mirror; 11. a sixth mirror; 12. a third reflector; 13. a first laser crystal; 14. a second laser crystal; 15. a sum frequency crystal; 16. frequency doubling crystals; 17. an acousto-optic Q-switch; 18. a first cavity mirror; 19. a second cavity mirror; 21. frequency doubling light; 22. sum frequency light; 30. a first collimating lens group; 40. a second collimating lens group; 20. a first high-reflection lens; 50. and a beam limiting device.
Detailed Description
The concept and technical effects of the present invention will be clearly and completely described below in conjunction with the embodiments to fully understand the objects, features and effects of the present invention. It is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and those skilled in the art can obtain other embodiments without inventive effort based on the embodiments of the present invention, and all embodiments are within the protection scope of the present invention.
In the description of the present invention, if an orientation description is referred to, for example, the orientations or positional relationships indicated by "upper", "lower", "front", "rear", "left", "right", etc. are based on the orientations or positional relationships shown in the drawings, only for convenience of describing the present invention and simplifying the description, but not for indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention. If a feature is referred to as being "disposed," "secured," "connected," or "mounted" to another feature, it can be directly disposed, secured, or connected to the other feature or indirectly disposed, secured, connected, or mounted to the other feature.
In the description of the embodiments of the present invention, if "a number" is referred to, it means one or more, if "a plurality" is referred to, it means two or more, if "greater than", "less than" or "more than" is referred to, it is understood that the number is not included, and if "greater than", "lower" or "inner" is referred to, it is understood that the number is included. If reference is made to "first" or "second", this should be understood to distinguish between features and not to indicate or imply relative importance or to implicitly indicate the number of indicated features or to implicitly indicate the precedence of the indicated features.
Volume of the mold: the volume occupied by the Gaussian beam in the resonant cavity.
Example one
Referring to fig. 1, a schematic structural diagram of an ultraviolet laser based on a bimorph structure in an embodiment of the present invention is shown. The ultraviolet laser based on the bimorph structure includes:
the device comprises a first pump source 1 and a second pump source 2, wherein the first pump source 1 and the second pump source 2 are symmetrically arranged, the first pump source 1 is used for generating a first pump beam, and the second pump source 2 is used for generating a second pump beam;
the first collimating lens group is arranged between the first pumping source 1 and the second pumping source 2 and is used for collimating and/or focusing the first pumping beam;
the second collimating lens group is arranged between the first collimating lens group and the second pumping source 2 and is used for collimating and/or focusing the second pumping beam;
a first laser crystal 13 for receiving the first pump beam and outputting a first fundamental frequency light;
a second laser crystal 14 for receiving the second pump beam and outputting a second fundamental frequency light;
the acousto-optic Q-switch 17 is used for receiving the first fundamental frequency light and the second fundamental frequency light and outputting first pulse fundamental frequency light and second pulse fundamental frequency light;
a frequency doubling crystal 16 for receiving the first pulse base frequency light and the second pulse base frequency light and outputting frequency doubling light 21;
and a sum frequency crystal 15 for receiving the first pulse base frequency light, the second pulse base frequency light, the frequency doubling light 21 and outputting a sum frequency light 22.
The first pump beam and the second pump beam have the same wavelength, and the wavelengths of the first pump beam and the second pump beam are 808nm or 88 xnm.
The first pump beam is collimated and/or focused by the first collimating lens group and focused on the surface of the first laser crystal 13. The first laser crystal 13 receives the first pump beam and outputs a first fundamental frequency light, and the wavelength of the first fundamental frequency light is 1064 nm.
The distance value of the focus of the first pump beam on the incident end face of the first laser crystal 13 is 1-3 mm; the focal point of the second pump beam is located at the incident end face of the second laser crystal 14 by a distance value of 1-3 mm.
The second pump beam is collimated and/or focused by the second collimating lens group and focused on the surface of the second laser crystal 14. The second laser crystal 14 receives the second pump beam and outputs a second fundamental frequency light, wherein the wavelength of the second fundamental frequency light is 1064 nm.
The first collimating lens group comprises a first plano-convex lens 3 and a second plano-convex lens 4; the convex surface of the first plano-convex lens 3 and the convex surface of the second plano-convex lens 4 are symmetrically arranged; the second collimating lens group comprises a third plano-convex lens 5 and a fourth plano-convex lens 6; the convex surface of the third plano-convex lens 5 is arranged symmetrically to the convex surface of the fourth plano-convex lens 6. The first laser crystal 13 and the second laser crystal 14 are arranged in an axisymmetric manner with a spacing of 5-20 mm. The magnification of the first collimating lens group and the second collimating lens group is 1.2.
The uv laser also includes a semiconductor refrigerator for controlling the operating temperature of frequency doubling crystal 16 and sum frequency crystal 15.
The output end of the sum frequency crystal 15 is provided with a Brewster end face; the brewster end face is used for refracting and separating the first pulse fundamental frequency light, the second pulse fundamental frequency light, the frequency doubling light 21 and the sum frequency light 22.
Example two
Referring to fig. 1, due to the thermal lens effect, the refractive index of each spatial position of the crystal changes, and the oscillating beam reciprocating along the axis of the resonant cavity deviates from the original propagation direction due to refraction when passing through the crystal. As shown in fig. 1, the first mirror 7, the second mirror 8, the third mirror 12, the fourth mirror 9, the fifth mirror 10, and the sixth mirror 11 form a resonant cavity.
The ultraviolet laser further includes: a first reflector 7, a second reflector 8, and a third reflector 12; the first reflector 7 and the second reflector 8 are used for reflecting the first fundamental frequency light and the second fundamental frequency light, so that the first fundamental frequency light and the second fundamental frequency light are transmitted to the acousto-optic Q-switch 17 and output first pulse fundamental frequency light and second pulse fundamental frequency light; the third reflector 12 is used for reflecting the first pulse fundamental frequency light and the second pulse fundamental frequency light.
The surface of the acousto-optic Q-switch 17 is provided with an antireflection film to improve the transmissivity of the acousto-optic Q-switch 17 to the first pulse fundamental frequency light and the second pulse fundamental frequency light.
The ultraviolet laser further includes: a fourth mirror 9, a fifth mirror 10, a sixth mirror 11; the fourth reflector 9 and the fifth reflector 10 are used for reflecting the first pulse fundamental frequency light and the second pulse fundamental frequency light to the frequency doubling crystal 16; the sixth mirror 11 is used to make the first pulse base frequency light and the second pulse base frequency light transmit the frequency doubling crystal 16 for reflection and transmit the frequency doubling crystal 16 again to generate the frequency doubling light 21.
The frequency doubling crystal 16 is located at the beam waist positions of the first pulse fundamental frequency light and the second pulse fundamental frequency light.
The first pulse fundamental frequency light and the second pulse fundamental frequency light are transmitted twice in the frequency doubling crystal 16, class I phase matching is carried out, and part of the first pulse fundamental frequency light and the second pulse fundamental frequency light are converted into frequency doubling light 21, the wavelength of the frequency doubling light 21 is 532nm, and the pulse width is 12-80 ns.
The frequency doubling light 21 is inputted into the sum frequency crystal 15 together with the first pulse fundamental frequency light and the second pulse fundamental frequency light, and is subjected to class II phase matching, and is partially converted into the sum frequency light 22, and the wavelength of the sum frequency light 22 is 355 nm.
The output end of the sum frequency crystal 15 is provided with a Brewster end face; the brewster end face is used for refracting and separating the first pulse fundamental frequency light, the second pulse fundamental frequency light, the frequency doubling light 21 and the sum frequency light 22.
The frequency doubling light 21 and the sum frequency light 22 are output out of the resonant cavity body, and the first pulse fundamental frequency light and the second pulse fundamental frequency light resonate in the resonant cavity body.
The surfaces of the first reflector 7, the second reflector 8, the third reflector 12, the fourth reflector 9, the fifth reflector 10 and the sixth reflector 11 are all provided with high-reflection films and high-transmission films;
the high-reflection film is used for reflecting light with 1064nm and/or 532 nm; the high-transmittance film is used for transmitting light of 808nm and/or 880 nm.
The first laser crystal 13 and the second laser crystal 14 include: nd is YVO4, Nd is YAG, Nd is YLF or Nd is GdVO 4;
the doping concentration of the first laser crystal 13 and the second laser crystal 14 is 0.1% -0.3%.
Fig. 2 is a schematic diagram of a cavity of an ultraviolet laser based on a twin-crystal structure according to an embodiment of the present invention. The cavity includes: the first cavity mirror 18 and the second cavity mirror 19 are arranged oppositely to form a resonant cavity body. A first laser crystal 13 and a second laser crystal 14 are arranged in the resonant cavity, the first laser crystal 13 and the second laser crystal 14 are arranged at a symmetrical interval, and a frequency doubling crystal 16 is arranged on one side of the second laser crystal 14 far away from the first laser crystal 13.
The mode volume of the gain medium in the cavity is equal to the sum of the mode volumes utilized by the bimorph by the fundamental mode gaussian beam. The first laser crystal 13 and the second laser crystal 14 are symmetrically arranged at intervals to fully utilize the mode volume of the laser crystal, so that higher output power can be obtained. Under a relatively long optical cavity, the beam waist positions of the first pulse fundamental frequency light and the second pulse fundamental frequency light can be positioned near the input end face of the frequency doubling crystal 16 by adjustment, so that the frequency doubling efficiency is further improved.
The mode volume V1 is increased when the two are placed at symmetrical intervals, and the change trend is slow; the die volume V2 is decreasing with a steeper trend when placed at equal intervals. In this case, V1< V2 means that the mode volume is large when the die is placed at equal intervals.
Since the mode volume V1 increases progressively when the first laser crystal 13 and the second laser crystal 14 are symmetrically spaced in the dual rod resonator, the trend is slower.
EXAMPLE III
Fig. 3 is a schematic diagram showing an optical path structure of an ultraviolet laser based on a bimorph structure according to an embodiment of the present invention. Please refer to fig. 1.
The ultraviolet laser based on the bimorph structure includes:
the device comprises a first pump source 1 and a second pump source 2, wherein the first pump source 1 and the second pump source 2 are symmetrically arranged, the first pump source 1 is used for generating a first pump beam, and the second pump source 2 is used for generating a second pump beam;
the first collimating lens group 30 is arranged between the first pumping source 1 and the second pumping source 2 and is used for collimating and/or focusing the first pumping beam;
the second collimating lens group 40 is arranged between the first collimating lens group 30 and the second pumping source 2 and is used for collimating and/or focusing the second pumping light beam;
a first laser crystal 13 for receiving the first pump beam and outputting a first fundamental frequency light;
a second laser crystal 14 for receiving the second pump beam and outputting a second fundamental frequency light;
the acousto-optic Q-switch 17 is used for receiving the first fundamental frequency light and the second fundamental frequency light and outputting first pulse fundamental frequency light and second pulse fundamental frequency light;
a frequency doubling crystal 16 for receiving the first pulse base frequency light and the second pulse base frequency light and outputting frequency doubling light 21;
and a sum frequency crystal 15 for receiving the first pulse base frequency light, the second pulse base frequency light, the frequency doubling light 21 and outputting a sum frequency light 22.
The first pump beam and the second pump beam have the same wavelength, and the wavelengths of the first pump beam and the second pump beam are 808nm or 88 xnm.
The first pump beam is collimated and/or focused by the first collimating lens group 30 and focused on the surface of the first laser crystal 13. The first laser crystal 13 receives the first pump beam and outputs a first fundamental frequency light, and the wavelength of the first fundamental frequency light is 1064 nm.
The distance value of the focus of the first pump beam on the incident end face of the first laser crystal 13 is 1-3 mm; the focal point of the second pump beam is located at the incident end face of the second laser crystal 14 by a distance value of 1-3 mm.
The second pump beam is collimated and/or focused by the second collimating lens group 40 and focused on the surface of the second laser crystal 14. The second laser crystal 14 receives the second pump beam and outputs a second fundamental frequency light, wherein the wavelength of the second fundamental frequency light is 1064 nm.
The first collimating lens group 30 includes a first plano-convex lens 3, a second plano-convex lens 4; the convex surface of the first plano-convex lens 3 and the convex surface of the second plano-convex lens 4 are symmetrically arranged; the second collimating lens group 40 includes a third plano-convex lens 5, a fourth plano-convex lens 6; the convex surface of the third plano-convex lens 5 is arranged symmetrically to the convex surface of the fourth plano-convex lens 6. The first laser crystal 13 and the second laser crystal 14 are arranged in an axisymmetric manner with a spacing of 5-20 mm. The magnification of the first collimating lens group and the second collimating lens group is 1.2.
The uv laser also includes a semiconductor refrigerator for controlling the operating temperature of frequency doubling crystal 16 and sum frequency crystal 15.
The output end of the sum frequency crystal 15 is provided with a Brewster end face; the brewster end face is used for refracting and separating the first pulse fundamental frequency light, the second pulse fundamental frequency light, the frequency doubling light 21 and the sum frequency light 22.
The ultraviolet laser based on the bimorph structure further includes: a first high-reflection lens 20 and a beam limiting device 50. The first high-reflection lens 20 is used for reflecting the first pump beam generated by the first pump source. The beam limiting device 50 is used to block the second excess frequency doubled light without the sum frequency effect. The beam limiting device 50 is provided with a light blocking hole, and the light blocking hole blocks the propagation path of the frequency doubling light to block redundant frequency doubling light, so that high-purity sum-frequency light output is obtained.
Referring to fig. 3, due to the thermal lens effect, the refractive index of each spatial position of the crystal changes, and the oscillating beam reciprocating along the axis of the resonant cavity deviates from the original propagation direction due to refraction when passing through the crystal. As shown in fig. 1, the first mirror 7, the second mirror 8, the third mirror 12, the fourth mirror 9, the fifth mirror 10, and the sixth mirror 11 form a resonant cavity.
The ultraviolet laser further includes: a first reflector 7, a second reflector 8, and a third reflector 12; the first reflector 7 and the second reflector 8 are used for reflecting the first fundamental frequency light and the second fundamental frequency light, so that the first fundamental frequency light and the second fundamental frequency light are transmitted to the acousto-optic Q-switch 17 and output first pulse fundamental frequency light and second pulse fundamental frequency light; the third reflector 12 is used for reflecting the first pulse fundamental frequency light and the second pulse fundamental frequency light.
The surface of the acousto-optic Q-switch 17 is provided with an antireflection film to improve the transmissivity of the acousto-optic Q-switch 17 to the first pulse fundamental frequency light and the second pulse fundamental frequency light.
The ultraviolet laser further includes: a fourth mirror 9, a fifth mirror 10, a sixth mirror 11; the fourth reflector 9 and the fifth reflector 10 are used for reflecting the first pulse fundamental frequency light and the second pulse fundamental frequency light to the frequency doubling crystal 16; the sixth mirror 11 is used to make the first pulse base frequency light and the second pulse base frequency light transmit the frequency doubling crystal 16 for reflection and transmit the frequency doubling crystal 16 again to generate the frequency doubling light 21.
The frequency doubling crystal 16 is located at the beam waist positions of the first pulse fundamental frequency light and the second pulse fundamental frequency light.
The first pulse fundamental frequency light and the second pulse fundamental frequency light are transmitted twice in the frequency doubling crystal 16, class I phase matching is carried out, and part of the first pulse fundamental frequency light and the second pulse fundamental frequency light are converted into frequency doubling light 21, the wavelength of the frequency doubling light 21 is 532nm, and the pulse width is 12-80 ns.
The frequency doubling light 21 is inputted into the sum frequency crystal 15 together with the first pulse fundamental frequency light and the second pulse fundamental frequency light, and is subjected to class II phase matching, and is partially converted into the sum frequency light 22, and the wavelength of the sum frequency light 22 is 355 nm.
The output end of the sum frequency crystal 15 is provided with a Brewster end face; the brewster end face is used for refracting and separating the first pulse fundamental frequency light, the second pulse fundamental frequency light, the frequency doubling light 21 and the sum frequency light 22.
The frequency doubling light 21 and the sum frequency light 22 are output out of the resonant cavity body, and the first pulse fundamental frequency light and the second pulse fundamental frequency light resonate in the resonant cavity body.
The surfaces of the first reflector 7, the second reflector 8, the third reflector 12, the fourth reflector 9, the fifth reflector 10 and the sixth reflector 11 are all provided with high-reflection films and high-transmission films;
the high-reflection film is used for reflecting light with 1064nm and/or 532 nm; the high-transmittance film is used for transmitting light of 808nm and/or 880 nm.
The first laser crystal 13 and the second laser crystal 14 include: nd is YVO4, Nd is YAG, Nd is YLF or Nd is GdVO 4;
the doping concentration of the first laser crystal 13 and the second laser crystal 14 is 0.1% -0.3%.
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the gist of the present invention. Furthermore, the embodiments of the present invention and the features of the embodiments may be combined with each other without conflict.
Claims (10)
Priority Applications (1)
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| CN111884022A (en) * | 2020-07-07 | 2020-11-03 | 深圳市海目星激光智能装备股份有限公司 | Method for reducing thermal lens effect of laser crystal |
| CN115657394A (en) * | 2022-10-27 | 2023-01-31 | 上海频准激光科技有限公司 | A Folded Frequency Doubling Laser System Based on Double-pass Periodically Polarized Crystals |
| CN118889179A (en) * | 2024-09-30 | 2024-11-01 | 深圳瑞丰恒激光技术有限公司 | A low thermal effect ultraviolet laser and calibration method thereof |
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