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CN111192810A - Large-beam ion implanter dose offset method - Google Patents

Large-beam ion implanter dose offset method Download PDF

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Publication number
CN111192810A
CN111192810A CN201811357791.8A CN201811357791A CN111192810A CN 111192810 A CN111192810 A CN 111192810A CN 201811357791 A CN201811357791 A CN 201811357791A CN 111192810 A CN111192810 A CN 111192810A
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CN
China
Prior art keywords
motion
pmac
power supply
ignition
linear
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Pending
Application number
CN201811357791.8A
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Chinese (zh)
Inventor
方加晔
李士会
肖志强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Zhongkexin Electronic Equipment Co Ltd
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Beijing Zhongkexin Electronic Equipment Co Ltd
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Application filed by Beijing Zhongkexin Electronic Equipment Co Ltd filed Critical Beijing Zhongkexin Electronic Equipment Co Ltd
Priority to CN201811357791.8A priority Critical patent/CN111192810A/en
Publication of CN111192810A publication Critical patent/CN111192810A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention discloses a method for supplementing the sparking dose of a large-beam ion implanter, which comprises the following steps: the PMAC board card (1) ACC-24E2A PMAC shaft card (2) ignition detection board (3) linear motion control component (4), industrial computer (5), PMAC MACRO cabinet (6), grating scale (7), linear motor (8), driver (9) and power supply (10) are mainly characterized in that the PMAC board card (1) is responsible for data acquisition and instruction sending of the whole controller in the industrial computer (6), and the industrial computer (6) is provided with a WINDOWS operating system. ACC-24E2A PMAC spindle card (2) controls the motor motion in PMAC MACRO cabinet (6), ignition signal capture processing and power output on. The linear motion control assembly (4) comprises a linear motor (8), a grating ruler (7) and a driver (9) for controlling the motion of the linear module, and the ignition detection plate (3) monitors the ignition state of the power supply (10), records the motion history of the power supply and sends the actions of opening and closing the power supply. The linear module has two motion mechanisms: an upper limit (12) and a lower limit (11).

Description

Large-beam ion implanter dose offset method
Technical Field
The invention is applied to the problem of sparking (glitch) in the dose injection of the large-beam ion implanter, and can keep the accuracy degree of the ion injection dose to the maximum extent and improve the injection abnormity processing capability of the large-beam ion implanter.
Background
The large beam ion implantation machine is an important equipment in microelectronic manufacture and is characterized by that the large beam energy is relatively small. When the large-beam ion implanter is used for a long time, the large beam of ions easily causes charge accumulation and pollution inside the implanter, and ignition cannot be avoided under the condition, so that the position of ignition is required to be recorded, the power supply is cut off to stop injection, the reverse injection is carried out when the beam returns to be normal, and the power supply is also cut off when the beam moves to the position of the last ignition, so that the dose compensation during ignition is realized.
Disclosure of Invention
The invention discloses a method for supplementing the sparking dose of a large-beam ion implanter, which is mainly used for the implantation exception handling of the ion implanter and can keep the accuracy degree of the ion implantation dose to the maximum extent and improve the implantation exception handling capacity of the large-beam ion implanter.
The invention is realized by the following hardware: the device comprises a PMAC board card (1), an ACC-24E2A PMAC shaft card (2), an ignition detection board (3), a linear motion control component (4), an industrial personal computer (5), a PMAC MACRO case (6), a grating ruler (7), a linear motor (8), a driver (9) and a power supply (10).
The hardware of the invention is characterized in that a PMAC board card (1) is inserted into an industrial personal computer (6) to be responsible for data acquisition and instruction sending of the whole controller, and the industrial personal computer (6) is provided with a WINDOWS operating system. The ACC-24E2A PMAC shaft card (2) is inserted into a PMAC MACRO cabinet (6) to control the motion of a motor, the ignition signal capture process and the power output are turned on. The linear motion control assembly (4) comprises a linear motor (8) and a grating ruler (7), a driver (9) controls the motion of the linear module, and the ignition detection plate (3) monitors the ignition state of the power supply (10), records the motion history of the power supply and sends the actions of opening and closing the power supply. The linear module has two motion mechanisms: an upper movement limit (12) and a lower movement limit (11).
The process of the invention is characterized in that the position is captured when the ignition occurs, and the synchronous comparison output is used when the linear module moves to the ignition position in the opposite direction, namely, the power supply is turned off when the position where the ignition occurs is recorded when the ignition occurs, and the high level is synchronously output when the linear module moves to the position where the ignition occurs last time when the injection dosage is recovered, so that the power supply is turned off.
The invention has the following remarkable advantages:
1. the position capturing precision is high.
2. The dosage compensation precision is high.
3. The hardware architecture is simple.
Detailed Description
The present invention will be further described with reference to, but not limited to, fig. 1, fig. 2, fig. 3 and fig. 4.
1. When single injection starts, the initial movement direction is from the lower movement limit (11) to the upper movement limit (12), the ignition detection plate (3) detects the state of the power supply (10) in real time, and when ignition occurs, the ignition detection plate (3) sends the same signal to the power supply (10) and the ACC-24E2A PMAC shaft card (2) at the same time. The ignition signal is sent to the power supply (10) for instantly turning off the power supply (10), the signal is sent to the ACC-24E2A PMAC shaft card (2) for capturing the motion instant position of the linear module (4) when ignition occurs, and the motion instant position is recorded in the PMAC shaft card (1), and meanwhile, the linear template continues to move to the upper motion limit (12) according to the original motion direction, wherein as shown in figure 3, the injected area of the wafer is on, and the non-injected area is on.
2. When the ion implanter is recovered after sparking occurs, a power supply (10) is turned on first, the beam current of the ion implanter is adjusted to a set value, ion implantation is carried out again, the linear module (4) moves in the opposite direction, namely, the linear module moves from the upper movement limit (12) to the lower movement limit (11), when the linear module moves to the position where sparking is captured last time, the ACC-24E2A PMAC shaft card (2) sends a signal to the sparking detection plate (3) to turn off the power supply (10), and the motion module (4) continues to move to the lower movement limit (11). At this point, the entire wafer is fully implanted.
3. If no sparking occurs during a single injection, the next injection is performed. If the ignition occurs, the frequency and time of the ignition need to be counted by the upper computer so as to facilitate the maintenance of the ion implanter in the later period.
Drawings
FIG. 1 is a hardware block diagram of a dose remedial system;
FIG. 2 is a top and bottom labeled position diagram of the linear motor during dose implantation;
FIG. 3 is a graph of the distribution of implanted and non-implanted regions assuming a wafer is implanted from top to bottom;
FIG. 4 is a flow chart of the replenishment dose when sparking occurs.
The contents of the present patent have been described in detail with reference to specific embodiments thereof. Any obvious modifications to the disclosure herein disclosed which do not depart from the spirit of the disclosure herein will be readily apparent to those skilled in the art as a violation of the disclosure and the pertinent legal responsibility will be afforded thereto.

Claims (3)

1.一种大束流离子注入机打火剂量补打方法包括硬件:PMAC板卡(1)、ACC-24E2A PMAC轴卡(2)、打火检测板(3)、直线运动控制组件(4)、工控机(5)、PMAC MACRO机箱(6)、光栅尺(7)、直线电机(8)、驱动器(9)、电源(10)。其特征在于:打火检测板(3)实时检测电源(10)的状态,发生打火时打火检测板(3)将同时发出相同的信号至电源(10)与ACC-24E2A PMAC轴卡(2)。信号发送至电源(10)用于瞬间关闭电源(10),信号发送至ACC-24E2A PMAC轴卡(2)用于打火发生时,直线模组(4)运动瞬时位置的捕捉,并记录到PMAC板卡(1)中,同时直线模板继续按照原来的运动方向到运动上限(12),这里假定初始的运动方向为运动下限(11)到运动上限(12)。如图3所示,已注入区域在上,未注入区域在下。1. A method for refilling the ignition dose of a large beam ion implanter comprising hardware: PMAC board (1), ACC-24E2A PMAC shaft card (2), ignition detection board (3), linear motion control assembly (4) , Industrial computer (5), PMAC MACRO chassis (6), grating ruler (7), linear motor (8), driver (9), power supply (10). It is characterized in that: the ignition detection board (3) detects the state of the power supply (10) in real time, and when ignition occurs, the ignition detection board (3) will simultaneously send the same signal to the power supply (10) and the ACC-24E2A PMAC axis card ( 2). The signal is sent to the power supply (10) for turning off the power supply (10) instantly, and the signal is sent to the ACC-24E2A PMAC axis card (2) for capturing the instantaneous position of the movement of the linear module (4) when the ignition occurs, and recording it. In the PMAC board (1), the linear template continues to follow the original motion direction to the motion upper limit (12). Here, it is assumed that the initial motion direction is the motion lower limit (11) to the motion upper limit (12). As shown in Figure 3, the implanted area is on the top and the unimplanted area is on the bottom. 2.如权利要求1所示的一种大束流离子注入机打火剂量补打方法,打火发生后恢复离子注入机时要先打开电源(10),调整离子注入机束流至设定值,重新进行离子注入,直线模组(4)向相反方向运动,即从运动上限(12)运动到运动下限(11),在运动到上一次打火捕捉的位置时,ACC-24E2A PMAC轴卡(2)向打火检测板(3)发送信号关闭电源(10),且运动模组(4)继续运动到运动下限(11)。2. a kind of large beam current ion implanter sparking dose refilling method as shown in claim 1, when recovering the ion implanter after the spark occurs, first turn on the power supply (10), adjust the ion implanter beam current to the set value , perform ion implantation again, and the linear module (4) moves in the opposite direction, that is, from the upper limit of motion (12) to the lower limit of motion (11). (2) Sending a signal to the ignition detection board (3) to turn off the power supply (10), and the motion module (4) continues to move to the lower motion limit (11). 3.如权利要求1所示的一种大束流离子注入机打火剂量补打方法,其方法的主要特征在于打火发生时,直线模组(4)反方向运动进行剂量补打。3. A method for refilling the sparking dose of a large beam ion implanter as claimed in claim 1, the main feature of the method is that when sparking occurs, the linear module (4) moves in the opposite direction to perform refilling of the sparking dose.
CN201811357791.8A 2018-11-15 2018-11-15 Large-beam ion implanter dose offset method Pending CN111192810A (en)

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CN111192810A true CN111192810A (en) 2020-05-22

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119361406A (en) * 2024-12-23 2025-01-24 青岛四方思锐智能技术有限公司 Ion implantation machine injection abnormality repair system, method and electronic equipment
CN119920668A (en) * 2025-01-20 2025-05-02 青岛思锐智能科技股份有限公司 Abnormal processing method, device and electronic equipment of ion implanter

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1638015A (en) * 2004-01-09 2005-07-13 应用材料有限公司 Improvements relating to ion implantation
WO2007111822A2 (en) * 2006-03-22 2007-10-04 Axcelis Technologies, Inc. A method of ion beam control for glitch recovery
CN101203932A (en) * 2005-04-02 2008-06-18 瓦里安半导体设备公司 Method and apparatus for transient interference recovery during fixed beam ion implantation using fast ion beam control
CN103026450A (en) * 2010-07-29 2013-04-03 艾克塞利斯科技公司 Universal Beam Jamming Detection System
CN104022007A (en) * 2014-06-16 2014-09-03 北京中科信电子装备有限公司 Device and method for avoiding ion beam glitches

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1638015A (en) * 2004-01-09 2005-07-13 应用材料有限公司 Improvements relating to ion implantation
CN101203932A (en) * 2005-04-02 2008-06-18 瓦里安半导体设备公司 Method and apparatus for transient interference recovery during fixed beam ion implantation using fast ion beam control
WO2007111822A2 (en) * 2006-03-22 2007-10-04 Axcelis Technologies, Inc. A method of ion beam control for glitch recovery
CN103026450A (en) * 2010-07-29 2013-04-03 艾克塞利斯科技公司 Universal Beam Jamming Detection System
CN104022007A (en) * 2014-06-16 2014-09-03 北京中科信电子装备有限公司 Device and method for avoiding ion beam glitches

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119361406A (en) * 2024-12-23 2025-01-24 青岛四方思锐智能技术有限公司 Ion implantation machine injection abnormality repair system, method and electronic equipment
CN119920668A (en) * 2025-01-20 2025-05-02 青岛思锐智能科技股份有限公司 Abnormal processing method, device and electronic equipment of ion implanter

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Application publication date: 20200522

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