CN111189054A - Tail gas treatment system and method for semiconductor production equipment - Google Patents
Tail gas treatment system and method for semiconductor production equipment Download PDFInfo
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- CN111189054A CN111189054A CN201811354309.5A CN201811354309A CN111189054A CN 111189054 A CN111189054 A CN 111189054A CN 201811354309 A CN201811354309 A CN 201811354309A CN 111189054 A CN111189054 A CN 111189054A
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- combustion
- exhaust gas
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
- F23G—CREMATION FURNACES; CONSUMING WASTE PRODUCTS BY COMBUSTION
- F23G7/00—Incinerators or other apparatus for consuming industrial waste, e.g. chemicals
- F23G7/06—Incinerators or other apparatus for consuming industrial waste, e.g. chemicals of waste gases or noxious gases, e.g. exhaust gases
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
- F23G—CREMATION FURNACES; CONSUMING WASTE PRODUCTS BY COMBUSTION
- F23G5/00—Incineration of waste; Incinerator constructions; Details, accessories or control therefor
- F23G5/50—Control or safety arrangements
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- Environmental & Geological Engineering (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Incineration Of Waste (AREA)
- Treating Waste Gases (AREA)
Abstract
本发明提供了一种半导体生产设备尾气处理系统和方法，涉及半导体生产技术领域，所述系统包括：半导体生产设备，包括至少两个腔室，各个腔室排出的废气分别通过管道连接到尾气处理设备；多个氟检测装置，分别与各个腔室对应，用于分别检测对应腔体排出的废气的氟含量；助燃气体控制装置，用于根据各个所述氟检测装置输出的氟含量，向所述尾气处理设备发出助燃气体添加指令。本发明的技术方案中，通过氟检测装置检测各个腔室排出的废气的氟含量，并根据该氟含量控制助燃气体添加量，相比较现有技术中仅通过大火和小火来分别实现对含氟气体的燃烧，可以较为精确地保证含氟气体充分燃烧并且节约能源、保护尾气处理设备。
The present invention provides a system and method for treating exhaust gas of semiconductor production equipment, and relates to the technical field of semiconductor production. equipment; a plurality of fluorine detection devices, corresponding to each chamber, respectively, for detecting the fluorine content of the exhaust gas discharged from the corresponding chambers; a combustion-supporting gas control device, for according to the fluorine content output by each of the fluorine detection devices. The exhaust gas treatment equipment issues an instruction to add combustion-supporting gas. In the technical scheme of the present invention, the fluorine content of the exhaust gas discharged from each chamber is detected by a fluorine detection device, and the addition amount of the combustion-supporting gas is controlled according to the fluorine content. The combustion of fluorine gas can more accurately ensure that the fluorine-containing gas is fully burned, save energy, and protect the exhaust gas treatment equipment.
Description
Technical Field
The invention relates to the technical field of semiconductor production, in particular to a tail gas treatment system and method of semiconductor production equipment.
Background
In the prior art, tail gas of semiconductor production equipment such as dry etching equipment is combusted through tail gas treatment equipment. The tail gas treatment device can be set to a small fire mode and a big fire mode.
If the mode is set to the small fire mode, the tail end exhaust processing pipeline of the plant will be blocked, and the environment will be polluted. If the mode is set to the strong fire mode, the service life of the tail gas treatment equipment is reduced, the consumption of combustion-supporting gas is increased, and the production cost is increased.
In actual production, the switching between the two modes is generally performed manually. Under the conditions that a plurality of cavities of semiconductor production equipment are different in service conditions and the fluorine content in the discharged waste gas is different, the above schemes can not meet the requirements of fully burning fluorine-containing gas, saving combustion-supporting gas and protecting tail gas treatment equipment at the same time.
It is to be noted that the information disclosed in the above background section is only for enhancement of understanding of the background of the present invention and therefore may include information that does not constitute prior art known to a person of ordinary skill in the art.
Disclosure of Invention
The embodiment of the invention aims to provide a system and a method for treating tail gas of semiconductor production equipment, and further solves the problem that the fluorine-containing gas cannot be fully combusted and the combustion-supporting gas cannot be saved at least to a certain extent.
Additional features and advantages of the invention will be set forth in the detailed description which follows, or may be learned by practice of the invention.
According to a first aspect of embodiments of the present invention, there is provided a semiconductor production facility tail gas treatment system, including: the semiconductor production equipment comprises at least two chambers, and waste gas discharged by each chamber is connected to tail gas treatment equipment through a pipeline; the tail gas treatment equipment is used for treating the waste gas discharged from the semiconductor production equipment; the fluorine detection devices correspond to the chambers respectively and are used for detecting the fluorine content of the waste gas discharged by the corresponding chambers respectively; and the combustion-supporting gas control device is used for sending a combustion-supporting gas adding instruction to the tail gas treatment equipment according to the fluorine content output by each fluorine detection device, and the combustion-supporting gas adding instruction comprises different combustion-supporting gas adding amounts.
In an embodiment of the present invention, the system further includes: the standby tail gas equipment is used for treating the waste gas discharged from the semiconductor production equipment, and is connected with each chamber of the semiconductor production equipment through a pipeline; and the change-over switch is used for closing a connecting channel between the semiconductor production equipment and the tail gas treatment equipment and opening the connecting channel between the semiconductor production equipment and the standby tail gas equipment when the tail gas treatment equipment fails.
In an embodiment of the present invention, the semiconductor manufacturing apparatus includes six chambers.
In an embodiment of the invention, the combustion supporting gas comprises at least any one of oxygen, methane and natural gas.
In the embodiment of the invention, the combustion-supporting gas control device is used for sending an instruction of adding combustion-supporting gas with the quantity N times of the set quantity when the fluorine content in the waste gas discharged by the N chambers exceeds the set threshold, wherein N is a natural number and is not less than 1.
In the embodiment of the invention, the standby tail gas equipment is connected with the combustion-supporting gas control device and works according to a combustion-supporting gas adding instruction sent by the combustion-supporting gas control device.
According to a second aspect of the embodiments of the present invention, there is provided a method for treating an exhaust gas of a semiconductor manufacturing apparatus, including: detecting the fluorine content of the waste gas discharged by each cavity of each semiconductor production device; and sending a combustion-supporting gas adding instruction to the tail gas treatment equipment according to the fluorine content of the waste gas discharged from each cavity, wherein the combustion-supporting gas adding instruction comprises different combustion-supporting gas adding amounts.
In an embodiment of the present invention, the sending a combustion-supporting gas adding instruction to the tail gas treatment device according to the fluorine content of the exhaust gas discharged from each cavity includes: and when the fluorine content in the waste gas discharged by the N chambers exceeds a set threshold value, sending an instruction of adding combustion-supporting gas with the quantity N times of the set quantity, wherein N is a natural number and is not less than 1.
In an embodiment of the present invention, the method further comprises: and when the tail gas treatment equipment has a fault, closing a connecting channel between the semiconductor production equipment and the tail gas treatment equipment, and opening a connecting channel between the semiconductor production equipment and the standby tail gas equipment.
In an embodiment of the present invention, the method further comprises: and sending a combustion-supporting gas adding instruction to the standby tail gas equipment according to the fluorine content of the waste gas discharged from each cavity.
The technical scheme provided by the embodiment of the invention has the following beneficial effects:
in the technical scheme provided by some embodiments of the invention, the fluorine content of the waste gas discharged from each chamber is detected by the fluorine detection device, and the addition amount of the combustion-supporting gas is controlled according to the fluorine content.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention. It is obvious that the drawings in the following description are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort. In the drawings:
FIG. 1 schematically illustrates a block diagram of an off-gas treatment system of a semiconductor manufacturing facility in accordance with an embodiment of the present invention;
FIG. 2 schematically illustrates a block diagram of a semiconductor manufacturing facility tail gas treatment system according to an embodiment of the present invention;
FIG. 3 schematically illustrates a block diagram of a semiconductor manufacturing facility tail gas treatment system according to another embodiment of the present invention;
FIG. 4 schematically illustrates a flow diagram of a semiconductor manufacturing facility tail gas treatment method according to an embodiment of the present invention.
Detailed Description
Exemplary embodiments will now be described more fully with reference to the accompanying drawings. The exemplary embodiments, however, may be embodied in many different forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of exemplary embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed description will be omitted.
Although relative terms, such as "upper" and "lower," may be used in this specification to describe one element of an icon relative to another, these terms are used in this specification for convenience only, e.g., in accordance with the orientation of the examples described in the figures. It will be appreciated that if the module of the icon is turned upside down, the component described as "upper" will become the component "lower". Other relative terms, such as "high," "low," "top," "bottom," "left," "right," and the like are also intended to have similar meanings. When a structure is "on" another structure, it may mean that the structure is integrally formed with the other structure, or that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure via another structure.
The terms "a," "an," "the," and the like are used to denote the presence of one or more elements/components/parts; the terms "comprising" and "having" are intended to be inclusive and mean that there may be additional elements/components/etc. other than the listed elements/components/etc.
Fig. 1 schematically shows a block diagram of an off-gas treatment system of a semiconductor manufacturing facility according to an embodiment of the present invention. As shown in fig. 1, an exemplary embodiment of the present disclosure provides a semiconductor manufacturing apparatus exhaust gas treatment system, including: a semiconductor production facility 110 including at least two chambers, and exhaust gas discharged from each chamber is connected to an exhaust gas treatment facility 120 through a pipe; a tail gas treatment facility 120 for treating an exhaust gas discharged from the semiconductor production facility; the fluorine detection devices correspond to the chambers respectively and are used for detecting the fluorine content of the waste gas discharged by the corresponding chambers respectively; and the combustion-supporting gas control device 140 is configured to send a combustion-supporting gas addition instruction to the tail gas treatment device 120 according to the fluorine content output by each fluorine detection device, where the combustion-supporting gas addition instruction includes different combustion-supporting gas addition amounts.
The fluorine content of the waste gas discharged from each chamber is detected by adopting the fluorine detection device, and the addition amount of the combustion-supporting gas is controlled according to the fluorine content, so that the combustion of the fluorine-containing gas in the tail gas of the semiconductor production equipment can be effectively and accurately controlled, the sufficient combustion of the fluorine-containing gas is ensured, the combustion-supporting gas is saved, and the tail gas treatment equipment is protected.
Specifically, as shown in fig. 1, the semiconductor production apparatus 110 has six chambers, i.e., a chamber 111, a chamber 112, a chamber 113, a chamber 114, a chamber 115, and a chamber 116. The fluorine detecting device includes a fluorine detecting device 131, a fluorine detecting device 132, a fluorine detecting device 133, a fluorine detecting device 134, a fluorine detecting device 135, and a fluorine detecting device 136. Each chamber corresponds to a fluorine detection device. For example, the fluorine detecting device 131 detects the fluorine content of the gas discharged from the chamber 111. Here, the number of chambers of the semiconductor manufacturing apparatus is six, but is not limited to six in practical use.
As shown in fig. 1, an output signal terminal SA of the fluorine detection device 131 is connected to an input signal terminal SA 'of the combustion-supporting gas control device 140, an output signal terminal SB of the fluorine detection device 132 is connected to an input signal terminal SB' of the combustion-supporting gas control device 140, an output signal terminal SC of the fluorine detection device 133 is connected to an input signal terminal SC 'of the combustion-supporting gas control device 140, an output signal terminal SD of the fluorine detection device 134 is connected to an input signal terminal SD' of the combustion-supporting gas control device 140, an output signal terminal SE of the fluorine detection device 135 is connected to an input signal terminal SE 'of the combustion-supporting gas control device 140, and an output signal terminal SF of the fluorine detection device 136 is connected to an input signal terminal SF' of the combustion-supporting gas control device 140.
In this way, the combustion-supporting gas control device can acquire the fluorine detection data of each fluorine detection device, and control the combustion-supporting gas addition amount of the exhaust gas treatment apparatus 120 according to the fluorine detection data.
In an exemplary embodiment of the present disclosure, it may be determined that the fluorine content of the exhaust gas discharged from the chamber exceeds a set threshold value, that is, the exhaust gas contains fluorine, and the exhaust gas containing fluorine in the chamber is determined as containing no fluorine when the fluorine content of the exhaust gas discharged from the chamber is less than or equal to the threshold value. In the case where the exhaust gas discharged from only one chamber contains fluorine, the amount of the combustion-supporting gas added may be set to a set amount, in the case where the exhaust gas discharged from two chambers in total contains fluorine, the amount of the combustion-supporting gas added may be set to twice the set amount, in the case where the exhaust gas discharged from three chambers in total contains fluorine, the amount of the combustion-supporting gas added may be set to three times the set amount, and so on. Thus, the combustion-supporting gas is added according to the requirement, the combustion effect is ensured, and the energy is saved.
In the exemplary embodiment of the present disclosure, the combustion-supporting gas includes oxygen, methane, and natural gas, but in practical applications, the composition of the combustion-supporting gas is not limited thereto. The oxygen, the methane and the natural gas are mixed according to a certain proportion and then used as mixed combustion-supporting gas in tail gas treatment equipment. The set amount is the amount of the mixed combustion-supporting gas. The set amount of the mixed combustion supporting gas is determined empirically and practically so that the fluorine in the exhaust gas from only one chamber is burned more sufficiently with the mixed combustion supporting gas in the set amount.
Therefore, in the exemplary embodiment of the present disclosure, when the fluorine content in the exhaust gas discharged from the N chambers exceeds a set threshold value, a command to add a combustion-supporting gas of N times of the set number is issued, where N is a natural number, and N ≧ 1. Specifically, when the fluorine content in the exhaust gas discharged from one chamber exceeds a set threshold value, a command of adding a set amount of combustion-supporting gas is sent; when the fluorine content in the exhaust gases discharged from the two chambers exceeds a set threshold value, a command is issued to add twice the set amount of combustion-supporting gas.
The block diagram shown in fig. 2 and the block diagram shown in fig. 1 are different schematic diagrams of the same embodiment. As shown in fig. 3, another system for treating an exhaust gas from a semiconductor manufacturing facility is provided in an embodiment of the present invention. Compared with the tail gas treatment system of the semiconductor production equipment shown in fig. 2, the system comprises standby tail gas equipment 150 and a change-over switch 160 in addition to the semiconductor production equipment 110, the tail gas treatment equipment 120, the fluorine detection device 130 and the combustion-supporting gas control device 140.
The spare exhaust equipment 150 is used for treating exhaust gas discharged from the semiconductor production equipment, and is connected with each chamber of the semiconductor production equipment through a pipeline. And the change-over switch 160 is used for closing a connecting channel between the semiconductor production equipment and the tail gas treatment equipment and opening a connecting channel between the semiconductor production equipment and the standby tail gas equipment when the tail gas treatment equipment fails.
The standby tail gas equipment is used as standby equipment of the tail gas treatment equipment, can be completely the same as the tail gas treatment equipment, and has the function of replacing the tail gas treatment equipment to work when the tail gas treatment equipment breaks down so as to ensure normal production.
Here, the spare exhaust gas facility is connected to the combustion-supporting gas control device 140, and operates in accordance with a combustion-supporting gas addition instruction from the combustion-supporting gas control device. Different amounts of combustion-supporting gas are added under the control of the combustion-supporting gas control device 140, so as to fully burn off fluorine in the waste gas on the premise of not wasting energy.
According to the tail gas treatment system of the semiconductor production equipment, provided by the embodiment of the invention, the fluorine content of the waste gas discharged by each chamber is detected through the fluorine detection device, and the addition amount of the combustion-supporting gas is controlled according to the fluorine content.
After the technical scheme in the embodiment of the invention is applied, compared with the technical scheme in the prior art, the semiconductor production equipment can save 70% of energy.
As shown in fig. 4, an embodiment of the present invention provides a method for treating tail gas of semiconductor manufacturing equipment, including:
step S402, detecting the fluorine content of the waste gas exhausted by each cavity of the semiconductor production equipment.
And S404, sending a combustion-supporting gas adding instruction to the tail gas treatment equipment according to the fluorine content of the waste gas discharged from each cavity.
The fluorine content of the waste gas discharged from each chamber is detected by adopting the fluorine detection device, and the addition amount of the combustion-supporting gas is controlled according to the fluorine content, so that the combustion of the fluorine-containing gas in the tail gas of the semiconductor production equipment can be effectively and accurately controlled, the sufficient combustion of the fluorine-containing gas is ensured, the combustion-supporting gas is saved, and the tail gas treatment equipment is protected.
Specifically, in step S404, a combustion-supporting gas adding instruction is issued to the exhaust gas treatment device according to the fluorine content of the exhaust gas discharged from each cavity, and the instruction includes: and when the fluorine content in the waste gas discharged by the N chambers exceeds a set threshold value, sending an instruction of adding combustion-supporting gas with the quantity N times of the set quantity, wherein N is a natural number and is not less than 1.
Specifically, when the exhaust gas discharged from only one chamber contains fluorine, the amount of the combustion-supporting gas added may be set to a set amount, when the exhaust gas discharged from two chambers in total contains fluorine, the amount of the combustion-supporting gas added may be set to twice the set amount, when the exhaust gas discharged from three chambers in total contains fluorine, the amount of the combustion-supporting gas added may be set to three times the set amount, and so on. Thus, the combustion-supporting gas is added according to the requirement, the combustion effect is ensured, and the energy is saved.
In the exemplary embodiment of the present disclosure, when the tail gas treatment device fails, the connection channel between the semiconductor production device and the tail gas treatment device may be closed, and the connection channel between the semiconductor production device and the standby tail gas device may be opened. The standby tail gas equipment is used as standby equipment of the tail gas treatment equipment and can be completely the same as the tail gas treatment equipment. Therefore, the tail gas treatment equipment can be replaced to work when the tail gas treatment equipment breaks down, so that normal production is guaranteed.
In the exemplary embodiment of the present disclosure, a combustion-supporting gas adding instruction may be further issued to the standby tail gas equipment according to the fluorine content of the exhaust gas discharged from each cavity.
Therefore, the standby tail gas equipment can also control the addition of the combustion-supporting gas according to the fluorine content, and can effectively and accurately control the combustion of the fluorine-containing gas in the tail gas of the semiconductor production equipment.
According to the tail gas treatment method for the semiconductor production equipment, provided by the embodiment of the invention, the fluorine content of the waste gas discharged by each chamber is detected, and the addition amount of the combustion-supporting gas is controlled according to the fluorine content.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811354309.5A CN111189054A (en) | 2018-11-14 | 2018-11-14 | Tail gas treatment system and method for semiconductor production equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811354309.5A CN111189054A (en) | 2018-11-14 | 2018-11-14 | Tail gas treatment system and method for semiconductor production equipment |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0933120A1 (en) * | 1998-02-03 | 1999-08-04 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Exhaust gas treatment installation |
| JP2007029790A (en) * | 2005-07-22 | 2007-02-08 | Hitachi Ltd | Method and apparatus for treating exhaust gas containing perfluoride |
| CN101175949A (en) * | 2005-05-16 | 2008-05-07 | 爱德华兹有限公司 | gas combustion equipment |
| CN101417205A (en) * | 2001-12-04 | 2009-04-29 | 株式会社荏原制作所 | Method and apparatus for treating exhaust gas |
| CN108006667A (en) * | 2017-11-27 | 2018-05-08 | 中国电子科技集团公司第四十八研究所 | A kind of hydrogen annealing tail gas treatment system and its processing method |
| CN209213884U (en) * | 2018-11-14 | 2019-08-06 | 长鑫存储技术有限公司 | Semiconductor production equipment exhaust treatment system |
-
2018
- 2018-11-14 CN CN201811354309.5A patent/CN111189054A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0933120A1 (en) * | 1998-02-03 | 1999-08-04 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Exhaust gas treatment installation |
| CN101417205A (en) * | 2001-12-04 | 2009-04-29 | 株式会社荏原制作所 | Method and apparatus for treating exhaust gas |
| CN101175949A (en) * | 2005-05-16 | 2008-05-07 | 爱德华兹有限公司 | gas combustion equipment |
| JP2007029790A (en) * | 2005-07-22 | 2007-02-08 | Hitachi Ltd | Method and apparatus for treating exhaust gas containing perfluoride |
| CN108006667A (en) * | 2017-11-27 | 2018-05-08 | 中国电子科技集团公司第四十八研究所 | A kind of hydrogen annealing tail gas treatment system and its processing method |
| CN209213884U (en) * | 2018-11-14 | 2019-08-06 | 长鑫存储技术有限公司 | Semiconductor production equipment exhaust treatment system |
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