CN111162189A - Light-emitting device, preparation method thereof and mask - Google Patents
Light-emitting device, preparation method thereof and mask Download PDFInfo
- Publication number
- CN111162189A CN111162189A CN201811319511.4A CN201811319511A CN111162189A CN 111162189 A CN111162189 A CN 111162189A CN 201811319511 A CN201811319511 A CN 201811319511A CN 111162189 A CN111162189 A CN 111162189A
- Authority
- CN
- China
- Prior art keywords
- layer
- light
- pixel
- electrode layer
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims description 13
- 238000001704 evaporation Methods 0.000 claims description 12
- 230000008020 evaporation Effects 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 3
- 238000007639 printing Methods 0.000 abstract description 14
- 229910004205 SiNX Inorganic materials 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 12
- 238000002955 isolation Methods 0.000 abstract description 11
- 238000009825 accumulation Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 128
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000005525 hole transport Effects 0.000 description 6
- 238000007641 inkjet printing Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000003504 photosensitizing agent Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000001291 vacuum drying Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/822—Cathodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to a light-emitting device, a preparation method thereof and a mask, wherein the light-emitting device comprises a substrate, a bottom electrode layer, a pixel limiting layer, a light-emitting unit layer and a top electrode layer, the bottom electrode layer is arranged on the substrate, the pixel limiting layer is arranged on the substrate, a pixel pit is formed by the pixel limiting layer surrounding the bottom electrode layer, at least part of the bottom electrode layer is exposed in the pixel pit, the light-emitting unit layer is arranged in the pixel pit and covers the bottom electrode layer, the top electrode layer is arranged on the light-emitting unit layer, and at least two sub-electrode regions which are mutually spaced are formed in the region of the top electrode layer corresponding to each pixel pit. Therefore, under the printing precision of the same printing equipment, the number of the sub-pixels is increased, the resolution ratio of the light-emitting device is improved, edge accumulation caused by the existence of the SiNx pixel isolation columns can be avoided, and the good light-emitting effect of the light-emitting device is ensured.
Description
Technical Field
The invention relates to the technical field of display, in particular to a light-emitting device, a preparation method thereof and a mask.
Background
Organic electroluminescent devices (OLEDs) are applied to the fields of new-generation mobile phone screens, computer displays, full-color televisions, etc., and are receiving wide attention from the industry because of their advantages of self-luminescence, wide viewing angle, high contrast, low power consumption, etc. Generally, each film layer of the light emitting device can be prepared by a vapor deposition process, an inkjet printing technique, and the like. The evaporation process is to heat organic small molecular materials in a vacuum cavity to gasify the organic small molecular materials, and form an OLED film layer on a glass substrate through a metal mask plate, but the vacuum evaporation equipment is expensive, and large-area OLED devices cannot be prepared, so that the large-scale use of OLED displays is limited. The ink-jet printing technology has the advantages of high material utilization rate, no size limitation of a metal mask plate and the like, and is a key technology for realizing low-cost preparation of the large-size OLED display. In recent years, the performance of the printed OLED is greatly improved through the improvement of OLED materials, the improvement of a printing process and the optimization of a device structure.
However, in the high-resolution light-emitting device of the general structure, the uniformity of film formation of the sub-pixels is poor at the time of ink-jet printing, which has a large influence on the light-emitting effect.
Disclosure of Invention
Accordingly, there is a need for a light emitting device with high resolution and good uniformity of inkjet printing film formation.
A light-emitting device comprises a substrate, a bottom electrode layer, a pixel limiting layer, a light-emitting unit layer and a top electrode layer, wherein the bottom electrode layer is arranged on the substrate, the pixel limiting layer is arranged on the substrate, pixel pits are formed on the pixel limiting layer in a surrounding mode around the bottom electrode layer, at least part of the bottom electrode layer is exposed in the pixel pits, the light-emitting unit layer is arranged in the pixel pits and covers the bottom electrode layer, the top electrode layer is arranged on the light-emitting unit layer, and at least two sub-electrode regions which are spaced from each other are formed in the region, corresponding to each pixel pit, of the top electrode layer.
In one embodiment, the sub electrode regions are spaced apart by a distance of 20 μm to 50 μm.
In one embodiment, the display device further comprises a light shielding layer, wherein the light shielding layer is arranged on the top electrode layer and covers gaps among the sub electrode regions.
In one embodiment, the impedance of the light shielding layer is greater than 1014Omega/cm, the optical density value of the shading layer is more than 3.9/mum, and the thickness of the shading layer is 0.5-2μm.
In one embodiment, the region of the top electrode layer corresponding to each pixel pit forms two sub-electrode regions spaced from each other.
In one embodiment, the top electrode layer forms four sub-electrode regions spaced from each other in a region corresponding to each of the pixel pits.
In one embodiment, the light emitting unit layers include a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer.
In one embodiment, the pixel defining layer has a thickness of 0.5 μm to 2.5 μm.
The invention also provides a preparation method of the light-emitting device, which comprises the following steps:
forming a bottom electrode layer on a substrate;
forming a pixel defining layer on the substrate, the pixel defining layer forming a pixel pit around the bottom electrode layer, the bottom electrode layer being at least partially exposed in the pixel pit;
forming a light emitting unit layer on the bottom electrode layer in the pixel pit;
and forming a top electrode layer on the light emitting unit layer, and forming at least two sub-electrode regions which are spaced from each other in the region of the top electrode layer corresponding to each pixel pit.
The invention also provides a mask for preparing the top electrode layer of the light-emitting device, which comprises a mask main body and a shielding part, wherein the mask main body is provided with an evaporation opening, the shielding part is positioned in the evaporation opening, and the orthographic projection of the shielding part is at least partially positioned in the pixel pits, so that at least two sub-electrode regions which are mutually spaced are formed in the region of the top electrode layer corresponding to each pixel pit during evaporation.
Currently, in order to improve resolution, a general light emitting device generally separates Indium Tin Oxide (ITO) in one pixel pit using a pixel separation column of SiNx to form a plurality of sub-pixels, thereby improving resolution. However, in this way, due to the existence of the pixel isolation pillars of SiNx in the pixel pits, the uniformity of film formation of the sub-pixels is deteriorated, so that the light emitting effect is affected, and due to the need of introducing a set of yellow light processes of SiNx film formation, photoresist coating, photoetching, development and etching, the manufacturing cost is greatly increased.
The scheme of the invention adopts another idea, and does not use a pixel isolation column, but forms at least two sub-electrode regions which are mutually spaced in the region corresponding to the top electrode layer and the pixel pit, namely, patterns are carried out on the top electrode, so as to realize the purpose of improving the resolution. Thus, on one hand, the number of the sub-pixels can be increased and the resolution of the light-emitting device can be improved under the printing precision of the same printing equipment. On the other hand, the printing ink accumulation at the edge of the SiNx pixel isolation column due to the existence of the SiNx pixel isolation column can be avoided, so that adverse effects on the film forming uniformity of a printed organic layer are prevented, patterning of the top electrode is also beneficial to controlling the voltage drop of the device, the uniformity of light emission is improved, and the good light emitting effect of the light emitting device is ensured.
Drawings
Fig. 1 is a schematic structural view of a light emitting device of an embodiment;
FIG. 2 is a schematic structural diagram of a mask according to an embodiment;
FIG. 3 is a schematic structural diagram of a mask according to another embodiment;
FIG. 4 is a schematic view of the mask shown in FIG. 2 during evaporation;
fig. 5 is a schematic view of the mask shown in fig. 3 during vapor deposition.
Detailed Description
In order that the invention may be more fully understood, a more particular description of the invention will now be rendered by reference to specific embodiments thereof that are illustrated in the appended drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
As shown in fig. 1, a light emitting device 100 according to an embodiment of the present invention includes a substrate 10, a bottom electrode layer 20, a pixel defining layer 30, a light emitting cell layer 40, and a top electrode layer 50.
The bottom electrode layer 20 is disposed on the substrate 10, the pixel defining layer 30 is disposed on the substrate 10, and the pixel defining layer 30 forms a pixel pit around the bottom electrode layer 20, in which the bottom electrode layer 20 is at least partially exposed. The light emitting unit layer 40 is disposed in the pixel pits and covers the bottom electrode layer 20, the top electrode layer 50 is disposed on the light emitting unit layer 40, and at least two sub-electrode regions 51 are formed in the region where the top electrode layer 50 corresponds to each pixel pit.
Currently, in order to improve resolution, a general light emitting device generally separates Indium Tin Oxide (ITO) in one pixel pit using a pixel separation column of SiNx to form a plurality of sub-pixels, thereby improving resolution. However, in this way, due to the existence of the pixel isolation pillars of SiNx in the pixel pits, the uniformity of film formation of the sub-pixels is deteriorated, so that the light emitting effect is affected, and due to the need of introducing a set of yellow light processes of SiNx film formation, photoresist coating, photoetching, development and etching, the manufacturing cost is greatly increased.
The scheme of the embodiment adopts another idea, instead of using the pixel isolation pillars, the top electrode layer 50 and the region corresponding to the pixel pits form at least two sub-electrode regions 51 which are spaced from each other, that is, the top electrode is patterned, so as to achieve the purpose of improving the resolution. Thus, on the one hand, the number of sub-pixels can be increased and the resolution of the light emitting device 100 can be improved with the printing accuracy of the same printing apparatus. On the other hand, the printing ink accumulation at the edge of the SiNx pixel isolation column due to the existence of the SiNx pixel isolation column can be avoided, so that adverse effects on the film forming uniformity of a printed organic layer are prevented, patterning of the top electrode is also beneficial to controlling the voltage drop of the device, the uniformity of light emission is improved, and the good light emitting effect of the light emitting device 100 is ensured. It is understood that the regions of the top electrode layer 50 not corresponding to the pixel pits may be connected to each other or spaced apart from each other.
In one specific example, the sub-electrode regions 51 are spaced apart by a distance of 20 to 50 μm, which has a good light emitting effect.
In a specific example, the light emitting device 100 further includes a light shielding layer 60, and the light shielding layer 60 is disposed on the top electrode layer 50 and covers the gaps between the sub-electrode regions 51. Thus, light leakage from the gap between the sub-electrode regions 51 can be prevented, and a good light emission effect can be further ensured.
In a specific example, the impedance of the light shielding layer 60 is greater than 1014Omega/cm, the optical density value (OD value) of the shading layer 60 is more than 3.9/mu m, and the thickness of the shading layer 60 is 0.5 mu m-2 mu m. Thus, the tip discharge phenomenon of the patterned top electrode layer 50 and the light leakage from the gap between the sub-electrode regions 51 can be well prevented. Specifically, the light shielding layer 60 is composed of a resin and a black pigment.
Alternatively, the region of the top electrode layer 50 corresponding to each pixel pit forms two sub-electrode regions 51 spaced apart from each other, thereby doubling the resolution. Alternatively, the region of the top electrode layer 50 corresponding to each pixel pit forms four sub-electrode regions 51 spaced apart from each other, thereby tripling the resolution. It is understood that the specific number and shape may be set as desired, and are not limited thereto.
In one specific example, the light emitting unit layer 40 includes a hole injection layer 41, a hole transport layer 42, a light emitting layer 43, an electron transport layer 44, and an electron injection layer 45. Specifically, when the bottom electrode layer 20 is an anode layer and the top electrode layer 50 is a cathode layer, the hole injection layer 41 is located on the side of the hole transport layer 42 away from the top electrode layer 50; when the bottom electrode layer 20 is a cathode layer and the top electrode layer 50 is an anode layer, the hole injection layer 41 is located on the side of the hole transport layer 42 away from the bottom electrode layer 20. It is understood that the structure of the light emitting cell layer 40 is not limited thereto.
In one specific example, the thickness of the pixel defining layer 30 is 0.5 μm to 2.5 μm. Alternatively, the substrate 10 is an ITO glass substrate, a TFT substrate, or the like, without being limited thereto.
The method for manufacturing a light-emitting device according to an embodiment of the present invention includes the following steps S1 to S4:
and S1, forming a bottom electrode layer on the substrate.
And S2, forming a pixel limiting layer on the substrate, wherein the pixel limiting layer forms a pixel pit around the bottom electrode layer, and the bottom electrode layer is at least partially exposed in the pixel pit.
And S3, forming a light emitting unit layer on the bottom electrode layer in the pixel pit.
And S4, forming a top electrode layer on the light-emitting unit layer, and forming at least two sub-electrode regions at intervals in the region of the top electrode layer corresponding to each pixel pit.
In the preparation method of the embodiment, at least two sub-electrode regions which are spaced from each other are formed in the region corresponding to the top electrode layer and each pixel pit, that is, the top electrode is patterned, so that the purpose of improving the resolution is achieved. Thus, on one hand, the number of the sub-pixels can be increased and the resolution of the light-emitting device can be improved under the printing precision of the same printing equipment. On the other hand, the printing ink accumulation at the edge of the SiNx pixel isolation column due to the existence of the SiNx pixel isolation column can be avoided, so that adverse effects on the film forming uniformity of a printed organic layer are prevented, and the good light emitting effect of the light emitting device is ensured.
As shown in fig. 2, a mask 200 according to an embodiment of the present invention is used for preparing the top electrode layer 50 of the light emitting device, the mask 200 includes a mask main body and a shielding portion 202, the mask main body is provided with an evaporation opening 201, the shielding portion 202 is located in the evaporation opening 201, and an orthogonal projection of the shielding portion 202 is at least partially located in a pixel pit, so that at least two sub-electrode regions 51 are formed in a region corresponding to each pixel pit of the top electrode layer 50 during evaporation.
By evaporating the top electrode layer 50 through the mask 200 of the present embodiment, at least two sub-electrode regions 51 spaced from each other can be conveniently formed in the region of the top electrode layer 50 corresponding to each pixel pit, so that the number of sub-pixels can be increased and the resolution of the light emitting device 100 can be improved under the printing precision of the same printing equipment. It is understood that the shape of the shielding portion 202 may be set as needed so that the region of the top electrode layer 50 corresponding to each pixel pit forms the sub-electrode regions 51 of a desired number and shape.
In a specific example, as shown in fig. 2, the shielding portion 202 has a linear shape, so that two sub-electrode regions 51 are formed at intervals in a region of the top electrode layer 50 corresponding to each pixel pit.
In a specific example, as shown in fig. 3, the shielding portion 202 is in a grid shape, so that four sub-electrode regions 51 are formed in a region of the top electrode layer 50 corresponding to each pixel pit.
The following are specific examples.
Example 1
Coating a layer of organic material with the thickness of 0.5-2.5 μm on the patterned ITO substrate, wherein the organic material contains a photosensitizer and super-hydrophilic groups, and then forming a plurality of pixel pits on the substrate through exposure and development. The hole injection layer, the hole transport layer and the light emitting layer are respectively deposited in the pixel pits by adopting an ink-jet printing process, a vacuum drying process and a baking process, then the electron transport layer and the electron injection layer are evaporated, then the cathode layer is evaporated by using a mask plate shown in figure 2, and finally the light shielding layer is deposited on the cathode layer. As shown in fig. 4, in this embodiment, the pixel pits are rectangular, have a length of 120 μm to 200 μm and a width of 40 μm to 65 μm, and the shielding portions 202 are linear and have a width of 20 μm to 50 μm, so that two sub-electrode regions 51 can be formed, thereby forming two sub-pixels and doubling the resolution.
Example 2
Coating a layer of organic material with the thickness of 0.5-2.5 μm on the patterned ITO substrate, wherein the organic material contains a photosensitizer and super-hydrophilic groups, and then forming a plurality of pixel pits on the substrate through exposure and development. The hole injection layer, the hole transport layer and the light emitting layer are respectively deposited in the pixel pits by adopting an ink-jet printing process, a vacuum drying process and a baking process, then the electron transport layer and the electron injection layer are evaporated, then the cathode layer is evaporated by using a mask plate shown in figure 3, and finally the light shielding layer is deposited on the cathode layer. As shown in fig. 5, in the present embodiment, the pixel pits are square, the side length is 80 μm to 200 μm, the shielding portion 202 is in a grid shape, wherein the width of each straight line is 20 μm to 50 μm, four sub-electrode regions 51 can be formed, and thus four sub-pixels can be formed, and the resolution is improved by three times.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A light-emitting device is characterized by comprising a substrate, a bottom electrode layer, a pixel limiting layer, a light-emitting unit layer and a top electrode layer, wherein the bottom electrode layer is arranged on the substrate, the pixel limiting layer surrounds the bottom electrode layer to form pixel pits, at least part of the bottom electrode layer is exposed in the pixel pits, the light-emitting unit layer is arranged in the pixel pits and covers the bottom electrode layer, the top electrode layer is arranged on the light-emitting unit layer, and at least two sub-electrode regions which are spaced from each other are formed in the region of the top electrode layer corresponding to each pixel pit.
2. A light emitting device according to claim 1, wherein the sub electrode regions are spaced apart by a distance of 20 μm to 50 μm.
3. The light-emitting device according to claim 1, further comprising a light-shielding layer disposed on the top electrode layer and covering gaps between the sub-electrode regions.
4. The light-emitting device according to claim 3, wherein the light-shielding layer has an impedance of more than 1014Omega/cm, the optical density value of the shading layer is more than 3.9/mum, and the thickness of the shading layer is 0.5-2μm.
5. A light emitting device as claimed in claim 1, wherein the region of the top electrode layer corresponding to each of the pixel pits forms two sub-electrode regions spaced apart from each other.
6. A light-emitting device according to claim 5, wherein the region of the top electrode layer corresponding to each of the pixel pits forms four sub-electrode regions spaced from each other.
7. The light-emitting device according to any one of claims 1 to 6, wherein the light-emitting unit layer comprises a hole-injecting layer, a hole-transporting layer, a light-emitting layer, an electron-transporting layer, and an electron-injecting layer.
8. The light-emitting device according to claim 1, wherein the thickness of the pixel defining layer is 0.5 μm to 2.5 μm.
9. A method for manufacturing a light emitting device, comprising the steps of:
forming a bottom electrode layer on a substrate;
forming a pixel defining layer on the substrate, the pixel defining layer forming a pixel pit around the bottom electrode layer, the bottom electrode layer being at least partially exposed in the pixel pit;
forming a light emitting unit layer on the bottom electrode layer in the pixel pit;
and forming a top electrode layer on the light emitting unit layer, and forming at least two sub-electrode regions which are spaced from each other in the region of the top electrode layer corresponding to each pixel pit.
10. A mask used for preparing the top electrode layer of the light-emitting device according to any one of claims 1 to 8, wherein the mask comprises a mask body and a shielding part, the mask body is provided with an evaporation opening, the shielding part is located in the evaporation opening, and an orthographic projection of the shielding part is at least partially located in the pixel pits, so that at least two sub-electrode regions are formed in the region of the top electrode layer corresponding to each pixel pit and spaced from each other during evaporation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811319511.4A CN111162189A (en) | 2018-11-07 | 2018-11-07 | Light-emitting device, preparation method thereof and mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811319511.4A CN111162189A (en) | 2018-11-07 | 2018-11-07 | Light-emitting device, preparation method thereof and mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111162189A true CN111162189A (en) | 2020-05-15 |
Family
ID=70554532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811319511.4A Pending CN111162189A (en) | 2018-11-07 | 2018-11-07 | Light-emitting device, preparation method thereof and mask |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111162189A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112885885A (en) * | 2021-02-01 | 2021-06-01 | 武汉华星光电半导体显示技术有限公司 | Display panel, display device and manufacturing method of display panel |
| WO2022027764A1 (en) * | 2020-08-07 | 2022-02-10 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method for oled display panel, and oled display panel |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000028999A (en) * | 1998-10-13 | 2000-05-25 | 소니 인터내셔널(유로파) 게엠베하 | Method of fabricating and structure of an active matrix light-emitting display device |
| US20150364715A1 (en) * | 2014-06-17 | 2015-12-17 | Samsung Display Co., Ltd. | Organic light-emitting device |
| CN105489631A (en) * | 2015-12-22 | 2016-04-13 | 昆山国显光电有限公司 | Organic light-emitting display device and preparation method thereof |
| CN105914223A (en) * | 2016-05-04 | 2016-08-31 | 上海天马有机发光显示技术有限公司 | Display panel manufacturing method and display panel |
| CN107507573A (en) * | 2017-10-09 | 2017-12-22 | 深圳市华星光电半导体显示技术有限公司 | AMOLED display device and its driving method |
| CN108493228A (en) * | 2018-05-23 | 2018-09-04 | 京东方科技集团股份有限公司 | Array substrate and its manufacturing method, display panel |
-
2018
- 2018-11-07 CN CN201811319511.4A patent/CN111162189A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000028999A (en) * | 1998-10-13 | 2000-05-25 | 소니 인터내셔널(유로파) 게엠베하 | Method of fabricating and structure of an active matrix light-emitting display device |
| US20150364715A1 (en) * | 2014-06-17 | 2015-12-17 | Samsung Display Co., Ltd. | Organic light-emitting device |
| CN105489631A (en) * | 2015-12-22 | 2016-04-13 | 昆山国显光电有限公司 | Organic light-emitting display device and preparation method thereof |
| CN105914223A (en) * | 2016-05-04 | 2016-08-31 | 上海天马有机发光显示技术有限公司 | Display panel manufacturing method and display panel |
| CN107507573A (en) * | 2017-10-09 | 2017-12-22 | 深圳市华星光电半导体显示技术有限公司 | AMOLED display device and its driving method |
| CN108493228A (en) * | 2018-05-23 | 2018-09-04 | 京东方科技集团股份有限公司 | Array substrate and its manufacturing method, display panel |
Non-Patent Citations (1)
| Title |
|---|
| 张云才: "《各行业专利技术现状及其发展趋势报告（2012-2013）》", 知识产权出版社 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022027764A1 (en) * | 2020-08-07 | 2022-02-10 | 深圳市华星光电半导体显示技术有限公司 | Manufacturing method for oled display panel, and oled display panel |
| CN112885885A (en) * | 2021-02-01 | 2021-06-01 | 武汉华星光电半导体显示技术有限公司 | Display panel, display device and manufacturing method of display panel |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103811533B (en) | Organic electroluminescence display panel and display device | |
| CN107293572B (en) | OLED display panel and preparation method thereof | |
| CN103762224B (en) | Organic el display panel | |
| JP5384752B2 (en) | Deposition film forming method and display device manufacturing method | |
| KR101193186B1 (en) | Apparatus for thin layer deposition, method for manufacturing of organic light emitting display apparatus using the same, and organic light emitting display apparatus manufactured by the method | |
| JP5677435B2 (en) | Organic EL display panel and manufacturing method thereof | |
| US9722005B2 (en) | Light-emitting device, array substrate, display device and manufacturing method of light-emitting device | |
| US11239282B2 (en) | Pixel structure and fabrication method thereof, display substrate and display apparatus | |
| US10305049B2 (en) | OLED substrate and manufacture method thereof | |
| CN108281476B (en) | Pixel defining layer, display panel, manufacturing method thereof, and display device | |
| CN110581160B (en) | Display substrate, preparation method thereof and display device | |
| CN107731883A (en) | OLED display and preparation method thereof | |
| KR101058117B1 (en) | Thin film deposition mask assembly, organic light emitting device using same, and method for manufacturing same | |
| CN104465671A (en) | Display substrate, manufacturing method of display substrate and display device | |
| KR20120029895A (en) | Apparatus for thin layer deposition and method for manufacturing of organic light emitting display apparatus using the same | |
| CN104617231A (en) | Array substrate, manufacturing method thereof and display device | |
| CN108565352A (en) | Organic LED display panel and its manufacturing method, display device | |
| US20250040353A1 (en) | Display panel, manufacturing method, and display device | |
| JP2010272300A (en) | Manufacturing method of organic EL display device | |
| CN106449718A (en) | OLED substrate and manufacturing method thereof | |
| US9269752B2 (en) | Organic electroluminescence display | |
| CN107195796A (en) | Dot structure based on inkjet technology and preparation method thereof | |
| CN111162189A (en) | Light-emitting device, preparation method thereof and mask | |
| CN111584553A (en) | OLED pixel arrangement structure, OLED display panel and manufacturing method of display panel | |
| CN104299979B (en) | Organic electroluminescent display panel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200515 |