CN111141404B - A thin film structure graphene high temperature temperature sensor - Google Patents
A thin film structure graphene high temperature temperature sensor Download PDFInfo
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- CN111141404B CN111141404B CN202010043429.4A CN202010043429A CN111141404B CN 111141404 B CN111141404 B CN 111141404B CN 202010043429 A CN202010043429 A CN 202010043429A CN 111141404 B CN111141404 B CN 111141404B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/16—Special arrangements for conducting heat from the object to the sensitive element
- G01K1/18—Special arrangements for conducting heat from the object to the sensitive element for reducing thermal inertia
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Abstract
一种薄膜结构石墨烯高温温度传感器，传感器包括：封装外壳，以及设置在封装外壳顶端的陶瓷端盖和设置在封装外壳内部底端的陶瓷基板，陶瓷端盖上设置有多个通孔；检测单元，检测单元设置陶瓷基板上；互连组件，互连组件设置在检测单元两侧，互连组件一端与检测单元连接，另一端与外部连接。本发明利用包含石墨烯层的检测纳米薄膜替代其它金属材料或者半导体材料，提高了电阻式温度传感器的测温区间，由于石墨烯材料的高热导率，提高了器件的响应速度。检测纳米薄膜被氧化铝纳米薄膜和衬底包裹着，有效消除了周围环境中的干扰因素，隔绝了检测纳米薄膜与外界的直接接触，从而提升了器件的耐高温能力以及稳定性，可应用于及其恶劣的高温测试环境。
A thin film structure graphene high temperature temperature sensor, the sensor comprises: a packaging shell, a ceramic end cap arranged at the top of the packaging shell and a ceramic substrate arranged at the bottom of the packaging shell, the ceramic end cap is provided with a plurality of through holes; a detection unit, the detection unit is arranged on the ceramic substrate; an interconnection component, the interconnection component is arranged on both sides of the detection unit, one end of the interconnection component is connected to the detection unit, and the other end is connected to the outside. The present invention utilizes a detection nano film containing a graphene layer to replace other metal materials or semiconductor materials, thereby increasing the temperature measurement range of the resistive temperature sensor, and due to the high thermal conductivity of the graphene material, the response speed of the device is increased. The detection nano film is wrapped by an aluminum oxide nano film and a substrate, which effectively eliminates interference factors in the surrounding environment and isolates the detection nano film from direct contact with the outside, thereby improving the high temperature resistance and stability of the device, and can be applied to extremely harsh high temperature test environments.
Description
Technical Field
The invention relates to the technical field of high-temperature testing, in particular to a graphene high-temperature sensor with a thin film structure.
Background
Because certain parts in the equipment such as an aerospace engine, a heavy-duty gas turbine, a thermal power station, a smelting furnace and the like work in a high-temperature severe environment for a long time, the temperature parameters of the high-temperature parts are required to be monitored in real time by using a temperature sensor, so that the health condition of the equipment is accurately estimated, the service life of the equipment is prolonged, and safe and reliable operation is ensured.
Because graphene can resist high temperature of 3000 ℃ in an anaerobic environment, and the thermal conductivity of the graphene is as high as 5300W/(m.K), the response time of a sensor prepared by adopting the graphene film to temperature is extremely short. Since Al 2O3 can bear high temperature of more than 1500 ℃, the melting point of the substrate material alpha-Al 2O3 can reach 2030 ℃, and therefore, the graphene can stably work in an environment of more than 1500 ℃ after being packaged by adopting an Al 2O3 film and an alpha-Al 2O3 substrate in an oxygen-free way.
The existing metal film high-temperature sensor has the advantages of 0-1300 ℃ temperature measurement range, high precision and stable performance, but large thermal inertia and long response time. The highest measured temperature of a film high-temperature sensor for turbine blades of an aeroengine, which is developed by Shanghai aviation measurement and control technology research, is 1100 ℃ [ invention number: CN109338290A ], and the upper temperature limit of a film temperature sensor for quick response of an aircraft, which is developed by Shaanxi electric appliance research, is 1200 ℃, and the response time is less than 50ms [ invention number: CN104748876A ].
The development of a fast-response, small-size and high-performance high-temperature-resistant film temperature sensor by using a graphene material is a scientific technology which needs to be solved urgently at present. Compared with a metal film high-temperature sensor, the graphene high-temperature sensor with the film structure can be used for high temperature of 1500 ℃ and has response time as low as 10ms.
Disclosure of Invention
In order to effectively solve the defects of the background technology, graphene is used for replacing metal and other semiconductor materials, and the graphene high-temperature sensor with the thin film structure is designed. The electrical characteristics of the detection nano film with the graphene layer are changed under the influence of temperature, specifically, the conductivity of the graphene layer is changed by the temperature, and then the change of the conductivity of the detection nano film is detected by an external detection circuit to realize the measurement of the temperature.
A graphene high temperature sensor of thin film structure that can stably operate at a high temperature of 1500 ℃ for a long period of time, the sensor comprising:
the packaging shell, a ceramic end cover arranged at the top end of the packaging shell and a ceramic substrate arranged at the bottom end inside the packaging shell, wherein a plurality of through holes are formed in the ceramic end cover;
The detection unit is arranged in an internal detection space defined by the ceramic end cover, the ceramic substrate and the packaging shell together and is positioned on the ceramic substrate;
And the interconnection components are arranged on two sides of the detection unit, one end of each interconnection component is connected with the detection unit, and the other end of each interconnection component is connected with the outside to derive the electrical response in the detection unit.
Optionally, the detection unit is arranged on one side of the ceramic substrate facing the inner detection space, and comprises a detection nano film, metal electrodes, an alumina nano film, a substrate and a barrier layer, wherein the substrate is arranged on the ceramic substrate, the detection nano film is arranged on the upper surface of the substrate, the alumina nano film covers the upper surface of the detection nano film, the metal electrodes are arranged on two sides of the detection nano film and are connected with the detection nano film, and the barrier layer is arranged between the metal electrodes and the substrate.
Optionally, the detection nano film is composed of an upper boron nitride layer, a middle graphene layer and a lower boron nitride layer, wherein the upper boron nitride layer, the middle graphene layer and the lower boron nitride layer are sequentially arranged from top to bottom, and the middle graphene layer is in a serpentine bending structure or a disc-shaped bending structure.
Optionally, the metal electrode is composed of a composite electrode, a wiring and an internal interconnection electrode, the composite electrode is connected with the internal interconnection electrode through the wiring, the composite electrode is respectively connected with two opposite ends of the middle-layer graphene layer, and the interconnection electrode is connected with an interconnection component and used for deriving an electrical response in the detection nano-film.
Optionally, the barrier layer is disposed at the bottom of the composite electrode, wiring and internal interconnect electrode.
Optionally, the interconnect assembly includes an interconnect lead, an interconnect pad, a stud and an external interconnect electrode, the interconnect lead, interconnect pad, stud and external interconnect electrode being connected in sequence.
Optionally, a mounting hole for mounting the lead post is formed in the ceramic substrate, the lead post is disposed in the mounting hole, the interconnection pad is disposed on the ceramic substrate and connected with one end of the lead post, an interconnection bump is disposed on the interconnection pad, one end of the interconnection lead is connected with the interconnection bump on the interconnection pad, the other end of the interconnection lead is connected with the internal interconnection electrode, an opening for accommodating the external interconnection electrode is formed in the bottom of the package shell, the external interconnection electrode is disposed at the bottom of the ceramic substrate and connected with the other end of the lead post, and the external interconnection electrode is connected with the external detection assembly.
The invention has the beneficial effects that the device uses the detection nano film containing the graphene layer to replace other metal materials or semiconductor materials on the basis of the original resistance type temperature sensor, so that the temperature measurement range of the resistance type temperature sensor is greatly improved, and the response speed of the device is effectively improved due to the high heat conductivity of the graphene material. Meanwhile, the detection nano film is wrapped by the alumina nano film and the substrate, so that interference factors in the surrounding environment are effectively eliminated, and the alumina nano film isolates direct contact between the detection nano film and the outside, so that the high temperature resistance and stability of the device are improved, the device can be applied to a severe high temperature test environment, the device is an ideal high temperature sensor, the device can stably work at a high temperature of 1500 ℃ for a long time, the response time is as low as 10ms, and the device is suitable for various high temperature test environments and has high practical value.
Drawings
FIG. 1 is a schematic view of an external structure of an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of an embodiment of the present invention;
FIG. 3 is a top view of a detection unit structure according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of the structure of a detection nano-film and a metal electrode according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a top view structure of a detection nano-film and a metal electrode according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a cross-sectional structure of a detection nano-film according to an embodiment of the present invention;
FIG. 7 is a schematic top view of a middle graphene layer and a metal electrode according to an embodiment of the present invention;
the list of reference numerals shown in the figures is as follows:
The detection nano film-1, the through hole-2, the alumina nano film-3, the composite electrodes-4 and 8, the wirings-5 and 9, the internal interconnection electrodes-6 and 10, the ceramic end cover-7, the interconnection leads-11 and 13, the interconnection bumps-12 and 14, the interconnection pads-15 and 17, the lead posts-16 and 18, the substrate-19, the ceramic substrate-20, the packaging shell-21, the upper boron nitride layer-22, the middle graphene layer-23, the lower boron nitride layer-24, the barrier layers-25 and 26 and the external interconnection electrodes-27 and 28.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
In the description of the present invention, it should be understood that the directions or positional relationships indicated by the terms "center", "upper", "lower", "front", "rear", "left", "right", etc., are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the indicated combinations or elements must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention. In addition, in the description process of the embodiment of the present invention, the positional relationships of the devices such as "upper", "lower", "front", "rear", "left" and "right" in all the figures are all standardized in fig. 1.
In the description of the present invention, unless explicitly stated or limited otherwise, the terms "connected" and "connected" should be interpreted broadly, for example, as a fixed connection, a removable connection, or an integral connection, as a mechanical connection, as an electrical connection, as a direct connection, as an indirect connection via an intermediary, or as a communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
The invention is further described with reference to the accompanying drawings:
As shown in fig. 1 and 2, in order to provide an external perspective view of a first embodiment of the present invention, a graphene high-temperature sensor with a thin film structure is provided, which can stably operate at a high temperature of 1500 ℃ for a long period of time, and the sensor includes:
The packaging shell 21, the whole packaging shell 21 can be in the shape of a cylinder, a cube, a cuboid and the like, and is not particularly limited, in the drawings, only a cylinder structure is shown, and the packaging shell is used for isolating the external environment, supporting and protecting the internal structure;
the ceramic end cover 7 is arranged at the top end of the packaging shell 21, the ceramic end cover 7 is provided with a plurality of through holes 2, the upper surface of the ceramic end cover 7 is of a porous structure formed by the plurality of through holes 2, and heat is quickly transferred into the ceramic end cover 7, so that the response time is improved, the shape of the through holes 2 is not limited to a round shape shown in the invention, can be square or other shapes, and is not particularly limited;
the ceramic substrate 20 is arranged at the bottom end inside the packaging shell 21, and the ceramic end cover 7, the ceramic substrate 20 and the packaging shell 21 jointly define an inner detection space for supporting and protecting the inner elements;
A detection unit disposed in the internal detection space and located on the ceramic substrate 20;
the interconnection components are arranged on two sides of the detection unit, one end of each interconnection component is connected with the detection unit, and the other end of each interconnection component is connected with the outside.
As shown in fig. 2, which is a cross-sectional view of the whole structure of the first embodiment of the present invention, a ceramic substrate 20 is disposed at the bottom of the inner detection space, and the outer peripheral side of the ceramic substrate 20 is lap-jointed with the inner side surface of the package housing 21.
As shown in fig. 2-5, the detection unit is disposed on a side of the ceramic substrate 20 facing the inner detection space, and comprises a detection nano film 1, metal electrodes, an alumina nano film 3, a substrate 19 and barrier layers 25 and 26, wherein the substrate 19 is disposed on the ceramic substrate 20, the detection nano film 1 is disposed on the upper surface of the substrate 19, the alumina nano film 3 covers the upper surface of the detection nano film 1, the metal electrodes are disposed on both sides of the detection nano film 1 and are connected with the detection nano film 1, and the barrier layers 25 and 26 are disposed between the metal electrodes and the substrate 19.
As shown in fig. 2,4 and 6, the detection nano-film 1 is composed of an upper boron nitride layer 22, a middle graphene layer 23 and a lower boron nitride layer 24, the upper boron nitride layer 22, the middle graphene layer 23 and the lower boron nitride layer 24 are sequentially arranged from top to bottom, the middle graphene layer 23 is of a serpentine bent reverse-folded structure, the middle graphene layer 23 has higher sensitivity by adopting the reverse-folded structure, the structural shape of the middle graphene layer 23 is not limited to the reverse-folded structure shown in the invention, the structure can also be in other shapes like a spiral disc-shaped bent mosquito-repellent incense, and the like, the number of reverse-folded strips of the middle graphene layer 23 is not limited to the number shown in the embodiment, and the number of the reverse-folded strips of the middle graphene layer 23 can also be other numbers and is not particularly limited. In other embodiments, the number of layers of the upper boron nitride layer 22 and the lower boron nitride layer 24 is 1 or more, and the middle graphene layer 23 has a single-layer structure. In the invention, the temperature is directly conducted to the middle graphene layer 23 of the detection nano film 1 through the upper alumina nano film 3, so that the external temperature change is sensed, and the response time is greatly improved.
As shown in fig. 2-7, the metal electrode is composed of composite electrodes 4, 8, wirings 5, 9 and internal interconnection electrodes 6, 10, the composite electrodes 4, 8 are connected with the internal interconnection electrodes 6, 10 through the wirings 5, 9, the composite electrodes 4, 8 are respectively connected with two opposite ends of the middle-layer graphene layer 23, the interconnection electrodes are connected with interconnection components for deriving the electrical response in the detection nano-film 1, the barrier layers 25, 26 are arranged at the bottoms of the composite electrodes 4, 8, the wirings 5, 9 and the internal interconnection electrodes 6, 10, and the barrier layers 25, 26 serve as wetting layers and protective layers to isolate the metal electrodes from the substrate 19 and prevent the mutual diffusion of metal atoms and substrate atoms at high temperature.
As shown in fig. 2 and 3, the interconnect assembly includes interconnect leads 11, 13, interconnect pads 15, 17, lead posts 16, 18, and external interconnect electrodes 27, 28, the interconnect leads 11, 13, interconnect pads 15, 17, lead posts 16, 18, and external interconnect electrodes 27, 28 being sequentially connected. The ceramic substrate 20 is provided with mounting holes for mounting the lead posts 16 and 18, the lead posts 16 and 18 are arranged in the mounting holes, the interconnection pads 15 and 17 are arranged on the ceramic substrate 20 and connected with one ends of the lead posts 16 and 18, the interconnection pads 15 and 17 are provided with interconnection bumps 12 and 14, one ends of the interconnection leads 11 and 13 are connected with the interconnection bumps 12 and 14 on the interconnection pads 15 and 17, the other ends of the interconnection leads 11 and 13 are connected with the internal interconnection electrodes 6 and 10, the bottom of the package shell 21 is provided with openings for accommodating the external interconnection electrodes 27 and 28, the external interconnection electrodes 27 and 28 are arranged at the bottom of the ceramic substrate 20 and connected with the other ends of the lead posts 16 and 18, and the external interconnection electrodes 27 and 28 are connected with external detection components for transmitting and detecting the electrical response of the nano film 1 to temperature signals, and the external detection components can be components forming a complete sensor structure in the prior art. The interconnection leads 11 and 13 are formed by adopting Pt wire lead bonding, and the substrate and the ceramic substrate are tightly contacted by adopting a Pt-Pt metal bonding technology, so that a firm support is provided for the temperature sensor chip.
The aluminum oxide nano film 3 can be covered on the upper surface of the detection nano film 1 in an evaporation mode to perform anaerobic packaging on the detection nano film 1, and the aluminum oxide nano film 3 on the upper surface of the detection nano film 1 is isolated from the substrate 19, so that the detection nano film 1 is in direct contact with the outside, and anaerobic protection is provided for the middle layer graphene layer 23 in the detection nano film 1.
The detection nano film is protected by the alumina nano film, and then the ceramic tube shell is used for packaging, so that the packaging is convenient.
In this embodiment, the substrate 19 is a cylinder, and the area of the detection nano-film 1 is smaller than the area of the upper side of the entire substrate 19.
In the invention, the substrate material can be selected from alpha-Al 2O3 material, the substrate can be selected from Al 2O3 material, and the metal electrode and the internal and external interconnection electrodes can be selected from Pt material.
The packaging shell is connected with the ceramic end cover 7 and the ceramic substrate 20 and is firmly bonded.
The principle of the invention is as follows:
When an external temperature signal acts on the upper surface of the sensor ceramic end cover, the temperature can be transmitted to the detection unit through the upper ceramic end cover, wherein the middle layer graphene layer is influenced by the temperature, and the electroacoustic coupling strength and the phonon scattering strength inside the material are changed, so that the conductivity of the middle layer graphene layer is changed. And detecting the current change in the middle-layer graphene layer surface to measure the externally applied temperature value. Meanwhile, in the process, the aluminum oxide nano film and the substrate isolate the detection nano film from direct contact with the outside, oxygen-free protection is provided for the middle graphene layer, and the detection nano film can work in a high-temperature environment, so that high-precision measurement of temperature in a severe and complex high-temperature environment is realized.
In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the spirit and scope of the invention as defined by the appended claims and their equivalents.
Claims (2)
1. The utility model provides a film structure graphite alkene high temperature sensor, can be long-term stable work at 1500 ℃ high temperature, its characterized in that, the sensor includes:
The packaging device comprises a packaging shell (21), a ceramic end cover (7) arranged at the top end of the packaging shell (21) and a ceramic substrate (20) arranged at the bottom end inside the packaging shell (21), wherein a plurality of through holes (2) are formed in the ceramic end cover (7);
A detection unit disposed within an internal detection space defined by the ceramic end cap (7), ceramic substrate (20), and package case (21) together and on the ceramic substrate (20);
The interconnection components are arranged on two sides of the detection unit, one end of each interconnection component is connected with the detection unit, and the other end of each interconnection component is connected with the outside to derive an electrical response in the detection unit;
The detection unit is arranged on one side of the ceramic substrate (20) facing the inner detection space and comprises a detection nano film (1), metal electrodes, an aluminum oxide nano film (3), a substrate (19) and barrier layers (25 and 26), wherein the substrate (19) is arranged on the ceramic substrate (20), the detection nano film (1) is arranged on the upper surface of the substrate (19), the aluminum oxide nano film (3) covers the upper surface of the detection nano film (1), the metal electrodes are arranged on two sides of the detection nano film (1) and are connected with the detection nano film (1), the barrier layers (25 and 26) are arranged between the metal electrodes and the substrate (19), and the substrate material is alpha-Al 2O3;
The metal electrodes consist of composite electrodes (4, 8), wirings (5, 9) and internal interconnection electrodes (6, 10), the composite electrodes (4, 8) are connected with the internal interconnection electrodes (6, 10) through the wirings (5, 9), the composite electrodes (4, 8) are respectively connected with two opposite ends of a middle-layer graphene layer (23), and the interconnection electrodes are connected with an interconnection component and are used for deriving and detecting electrical responses in the nano-film (1);
The interconnect assembly includes interconnect leads (11, 13), interconnect pads (15, 17), lead posts (16, 18) and external interconnect electrodes (27, 28), the interconnect leads (11, 13), interconnect pads (15, 17), lead posts (16, 18) and external interconnect electrodes (27, 28) being sequentially connected;
The ceramic substrate (20) is provided with a mounting hole for mounting the lead posts (16, 18), the lead posts (16, 18) are arranged in the mounting hole, the interconnection pads (15, 17) are arranged on the ceramic substrate (20) and connected with one ends of the lead posts (16, 18), the interconnection pads (15, 17) are provided with interconnection bumps (12, 14), one ends of the interconnection leads (11, 13) are connected with the interconnection bumps (12, 14) on the interconnection pads (15, 17), the other ends of the interconnection leads (11, 13) are connected with the internal interconnection electrodes (6, 10), the bottom of the packaging shell (21) is provided with an opening for accommodating the external interconnection electrodes (27, 28), the external interconnection electrodes (27, 28) are arranged at the bottom of the ceramic substrate (20) and connected with the other ends of the lead posts (16, 18), and the external interconnection electrodes (27, 28) are connected with an external detection component;
The detection nano film (1) is composed of an upper boron nitride layer (22), a middle graphene layer (23) and a lower boron nitride layer (24), wherein the upper boron nitride layer (22), the middle graphene layer (23) and the lower boron nitride layer (24) are sequentially arranged from top to bottom, and the middle graphene layer (23) is of a serpentine bending structure or a disc-shaped bending structure.
2. The thin film structured graphene high temperature sensor according to claim 1, wherein the barrier layer (25, 26) is provided at the bottom of the composite electrode (4, 8), wiring (5, 9) and internal interconnect electrode (6, 10).
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| Temperature Characteristics of a Pressure Sensor Based on BN/Graphene/BN Heterostructure;Mengwei Li 等;sensor;20190514;摘要、正文1-4节 * |
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