CN111106071B - 一种晶闸管及其制作方法 - Google Patents
一种晶闸管及其制作方法 Download PDFInfo
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- CN111106071B CN111106071B CN201811261306.7A CN201811261306A CN111106071B CN 111106071 B CN111106071 B CN 111106071B CN 201811261306 A CN201811261306 A CN 201811261306A CN 111106071 B CN111106071 B CN 111106071B
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811261306.7A CN111106071B (zh) | 2018-10-26 | 2018-10-26 | 一种晶闸管及其制作方法 |
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| CN201811261306.7A CN111106071B (zh) | 2018-10-26 | 2018-10-26 | 一种晶闸管及其制作方法 |
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| CN111106071A CN111106071A (zh) | 2020-05-05 |
| CN111106071B true CN111106071B (zh) | 2021-09-07 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP1298733A1 (en) * | 2001-09-28 | 2003-04-02 | ABB Schweiz AG | Turn-off high-power semiconductor device |
| CN202142521U (zh) * | 2011-06-03 | 2012-02-08 | 安徽省祁门县黄山电器有限责任公司 | 组合式大功率半导体芯片 |
| CN105934821B (zh) * | 2014-01-21 | 2018-11-23 | Abb瑞士股份有限公司 | 功率半导体装置 |
| CN107622954B (zh) * | 2017-08-08 | 2020-02-07 | 全球能源互联网研究院有限公司 | 功率型半导体器件封装方法及封装结构 |
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Effective date of registration: 20200927 Address after: 412001 Room 309, floor 3, semiconductor third line office building, Tianxin hi tech park, Shifeng District, Zhuzhou City, Hunan Province Applicant after: Zhuzhou CRRC times Semiconductor Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Applicant before: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. |
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Address after: 412001 Room 309, floor 3, semiconductor third line office building, Tianxin hi tech park, Shifeng District, Zhuzhou City, Hunan Province Patentee after: Zhuzhou CRRC Times Semiconductor Co., Ltd. Country or region after: China Address before: 412001 Room 309, floor 3, semiconductor third line office building, Tianxin hi tech park, Shifeng District, Zhuzhou City, Hunan Province Patentee before: Zhuzhou CRRC times Semiconductor Co.,Ltd. Country or region before: China |
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