CN111106023A - Chip surface connection method, system and power module system - Google Patents
Chip surface connection method, system and power module system Download PDFInfo
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Abstract
本发明涉及一种芯片表面连接方法、系统及功率模块系统，压合第一连接件与第二连接件，并加热第一连接件与第二连接件间的第一金属烧结剂，以使第一连接件与第二连接件间形成第一金属烧结连接层。基于此，在第一连接件和第二连接件间形成稳定连接层，有利于提高载流能力和导热率，同时，可通过选用熔点高于锡的熔点的第一金属颗粒，提高芯片的限制工作温度值。
The invention relates to a chip surface connection method, system and power module system. A first metal sintered connecting layer is formed between a connecting piece and the second connecting piece. Based on this, a stable connection layer is formed between the first connector and the second connector, which is beneficial to improve the current carrying capacity and thermal conductivity. At the same time, by selecting the first metal particles with a melting point higher than that of tin, the limitation of the chip can be improved. Operating temperature value.
Description
Technical Field
The invention relates to the technical field of chips, in particular to a chip surface connecting method, a chip surface connecting system and a power module system.
Background
A chip is a way to miniaturize a circuit, and the miniaturized circuit is packaged in a chip housing and widely used in various circuit systems. With the development of chip integration, the number of chips which can be configured by a circuit system per unit area is gradually increased. Therefore, the way the chip is mounted on the surface has a significant impact on the performance of the circuitry.
The traditional chip surface connection methods mainly include the following two methods: firstly, the copper wire or the aluminum wire is bonded; and secondly, forming a welding layer for surface connection by re-melting the solder paste or the soldering lug at high temperature. However, the chip surface connection method by copper wire or aluminum wire bonding has small current carrying capacity and low thermal conductivity; the chip surface connection mode of forming the welding layer by the solder paste or the soldering lug has high requirement on void ratio, and the working temperature of the chip is easily limited, namely the working temperature of the chip cannot be higher than the melting point of the solder paste or the soldering lug.
In summary, the conventional chip surface connection method has the above drawbacks.
Disclosure of Invention
Therefore, it is necessary to provide a chip surface connection method, a system and a power module system for overcoming the defects of the conventional chip surface connection method.
A chip surface connection method comprises the following steps:
mixing the first metal particles with an organic solvent to obtain a first metal sintering solvent;
coating the first metal sintering agent between the first connecting piece and the second connecting piece;
and pressing the first connecting piece and the second connecting piece, and heating the organic solvent to form a first metal sintering connecting layer between the first connecting piece and the second connecting piece.
The chip surface connecting method comprises the steps of pressing the first connecting piece and the second connecting piece, and heating the first metal sintering agent between the first connecting piece and the second connecting piece so as to form a first metal sintering connecting layer between the first connecting piece and the second connecting piece. Based on this, form stable connection layer between first connecting piece and second connecting piece, be favorable to improving current-carrying capacity and heat conductivity, simultaneously, the accessible chooses for use the first metal particle that the melting point is higher than the melting point of tin, improves the restriction operating temperature value of chip.
In one embodiment, the first metal particles comprise silver particles.
In one embodiment, the first metal particles comprise copper particles.
In one embodiment, the first metal particles comprise nano-silver particles.
In one embodiment, the first metal particles comprise nano-copper particles.
In one embodiment, the first connector comprises a metal frame and the second connector comprises a chip.
A chip surface attachment system comprising:
the first connecting piece comprises a first connecting piece body and a first metal layer plated on the first connecting piece body; wherein the first metal plated layer is composed of second metal particles sintered on one side of the first connector body;
a second connector comprising a second connector body and a plated second metal layer disposed on the second connector body; wherein the plated second metal layer is composed of third metal particles sintered on one side of the second connector body;
and the first metal plating layer is connected with the second metal plating layer through a first metal sintering connecting layer.
In the chip surface connecting system, the first metal plating layer of the first connecting piece is connected with the first metal plating layer of the second connecting piece through the second metal sintering connecting layer. Because the first metal plated layer is formed by sintering the second metal particles and the second metal plated layer is formed by sintering the third metal particles, the first metal sintered connecting layer is more stable. Based on this, be favorable to improving current-carrying capacity and heat conductivity, simultaneously, the accessible selects for use the melting point first metal particle, second metal particle and the third metal particle that the melting point is higher than tin, improves the restriction operating temperature value of chip.
In one embodiment, the second metal particles comprise silver particles or copper particles.
In one embodiment, the second metal particles comprise nano-silver particles.
In one embodiment, the second metal particles comprise nano-copper particles.
In one embodiment, the third metal particles comprise silver particles or copper particles.
In one embodiment, the third metal particles comprise nano-silver particles.
In one embodiment, the third metal particles comprise nano-copper particles.
In one embodiment, the second metal particles are metal particles made of the same material as the first metal particles.
In one embodiment, the second metal particles are metal particles made of the same material as the third metal particles.
In one embodiment, the third metal particles are metal particles made of the same material as the first metal particles.
In one embodiment, the second metal particles are metal particles made of the same material as the first metal particles and the third metal particles.
A power module system comprises a bottom plate and an IGBT power module;
the bottom plate comprises a bottom plate body and a first metal layer plated on the bottom plate body; wherein the plated first metal layer is composed of second metal particles sintered on one side of the base plate body;
the IGBT power module comprises an IGBT power module body and a second metal layer arranged on the IGBT power module body; the second metal layer is formed by third metal particles sintered on one side of the IGBT power module body;
and the first metal plating layer is connected with the second metal plating layer through a first metal sintering connecting layer.
In the power module system, the first metal plating layer of the bottom plate is connected with the second metal plating layer of the IGBT power module through the first metal sintering connecting layer. Because the first metal plated layer is formed by sintering the second metal particles and the second metal plated layer is formed by sintering the third metal particles, the first metal sintered connecting layer is more stable. Based on this, be favorable to improving current-carrying capacity and heat conductivity, simultaneously, the accessible selects for use the melting point first metal particle, second metal particle and the third metal particle that the melting point is higher than tin, improves IGBT power module's restriction operating temperature value.
In one embodiment, the IGBT power module body includes a mold package, a power terminal, and a signal terminal;
the second metal plating layer is arranged on one side of the mold sealing body.
Drawings
FIG. 1 is a flow chart of a chip surface bonding method according to an embodiment;
FIG. 2 is a schematic diagram of a chip surface connection method according to an embodiment;
FIG. 3 is a block diagram of a chip surface mount system according to one embodiment;
FIG. 4 is a schematic diagram of a power module system according to an embodiment;
fig. 5 is a schematic structural diagram of an IGBT power module according to an embodiment.
Detailed Description
For better understanding of the objects, technical solutions and effects of the present invention, the present invention will be further explained with reference to the accompanying drawings and examples. Meanwhile, the following described examples are only for explaining the present invention, and are not intended to limit the present invention.
The embodiment of the invention provides a chip surface connecting method.
Fig. 1 is a flowchart illustrating a chip surface connection method according to an embodiment, and as shown in fig. 1, the chip surface connection method according to an embodiment includes the steps of:
s100, mixing the first metal particles with an organic solvent to obtain a first metal sintering solvent;
s101, coating the first metal sintering agent between a first connecting piece and a second connecting piece;
s102, pressing the first connecting piece and the second connecting piece, and heating the organic solvent to form a first metal sintering connecting layer between the first connecting piece and the second connecting piece.
The first metal particles can be selected from metal particles having a melting point higher than that of the solder paste or pad. In one embodiment, the first metal particles are copper particles or silver particles. As one of the preferred embodiments, the first metal particles are nano-copper particles. As another preferred embodiment, the first metal particles are silver nanoparticles.
After the copper particles or the silver particles are selected, the melting point of the first metal particles is obviously higher than that of the solder paste or the soldering lug. The melting point of the first metal sintering connecting layer formed based on the first metal particles is higher than that of solder paste or soldering lugs, so that the working temperature limit of the chip is improved, and the first metal sintering connecting layer is prevented from being melted by the heat generated by the chip.
The first connecting piece and the second connecting piece are parts which need to be connected in a chip circuit system. The first connecting member may be a chip, or a metal frame, a substrate, a heat sink, or the like made of other materials. The second connecting piece is the same as the first connecting piece. The combination of the first connecting member and the second connecting member may be a combination of a chip and a chip, or a combination of a chip and a substrate.
In order to better understand the present embodiment, the following explanation is given by taking the metal frame as the first connecting member, the chip as the second connecting member, and the silver particles as the first metal particles.
Fig. 2 is a schematic view of a chip surface connection method according to an embodiment, and as shown in fig. 2, a first metal sintering solvent is coated between a metal frame and a chip, and the first metal sintering solvent includes an organic solvent and silver particles. The metal frame and the chip are pressed through external pressure, the first metal sintering solvent is heated and is kept warm for a period of time, so that the organic solvent is volatilized and ablated, a first metal sintering connecting layer with a small amount of micro spaces is formed among silver particles through mutual diffusion, and meanwhile, the silver particles, the metal frame and the chip are subjected to metallurgical reaction to form a bonding interface.
The chip surface connecting method comprises the steps of pressing the first connecting piece and the second connecting piece, and heating the first metal sintering agent between the first connecting piece and the second connecting piece so as to form a first metal sintering connecting layer between the first connecting piece and the second connecting piece. Based on this, form stable connection layer between first connecting piece and second connecting piece, be favorable to improving current-carrying capacity and heat conductivity, simultaneously, the accessible chooses for use the first metal particle that the melting point is higher than the melting point of tin, improves the restriction operating temperature value of chip.
The embodiment of the invention also provides a chip surface connecting system.
Fig. 3 is a block diagram of a chip surface connection system according to an embodiment, and as shown in fig. 3, the chip surface connection system according to an embodiment includes:
the first connecting piece comprises a first connecting piece body 100 and a first metal layer 101 plated on the first connecting piece body 100; wherein the first metal layer 101 consists of second metal particles sintered on one side of the first connector body 100;
a second connector including a second connector body 200 and a second metal layer 201 plated on the second connector body 200; wherein the second metal layer 201 is composed of third metal particles sintered on one side of the second connector body 200;
wherein, the first metal layer 101 and the second metal layer 201 are connected by a first metal sintering connection layer 300.
As shown in fig. 3, the first metal sintered layer 300 is formed by the chip surface connection method according to the above-described embodiment. Since the first metal layer 101 is composed of the second metal particles and the second metal layer 201 is composed of the third metal particles, the metallurgical reaction of the first metal sintered layer 300 is facilitated, and the connection stability between the first metal layer 101 and the second metal layer 201 is improved.
In one embodiment, the second metal particles can be selected to have a melting point higher than that of the solder paste or pad. In one embodiment, the second metal particles are copper particles or silver particles. As one of the preferred embodiments, the second metal particles are nano-copper particles. As another preferred embodiment, the second metal particles are silver nanoparticles.
After the copper particles or the silver particles are selected, the melting point of the second metal particles is obviously higher than that of the solder paste or the soldering lug. The melting point of the first metal layer 101 formed based on the second metal particles is higher than that of solder paste or solder pads, so that the working temperature limit of the chip is increased, and the first metal layer 101 is prevented from being melted by the heat generated by the chip.
In one embodiment, the third metal particles can be selected to have a melting point higher than that of the solder paste or pad. In one embodiment, the third metal particles are copper particles or silver particles. As one of the preferred embodiments, the third metal particles are nano-copper particles. As another preferred embodiment, the third metal particles are nano silver particles.
After the copper particles or the silver particles are selected, the melting point of the third metal particles is obviously higher than that of the solder paste or the soldering lug. The melting point of the second metal layer 201 formed based on the third metal particles is higher than that of solder paste or solder flakes, so that the working temperature limit of the chip is increased, and the second metal layer 201 is prevented from being melted by the heat generated by the chip.
In one embodiment, the second metal particles are metal particles made of the same material as the first metal particles. Through the metal particles with the same material, the plated first metal layer 101 and the first metal sintering connecting layer 300 are metal layers with the same material, so that the metallurgical reaction between the plated first metal layer 101 and the first metal sintering connecting layer 300 is facilitated, and the stability of the bonding interface between the plated first metal layer 101 and the first metal sintering connecting layer 300 is improved. Meanwhile, the current carrying capacity and the heat conducting performance between the plated first metal layer 101 and the first metal sintering connection layer 300 are improved. As a preferred embodiment, the second metal particles and the first metal particles are both nano silver particles.
In one embodiment, the third metal particles are metal particles made of the same material as the first metal particles. Through the metal particles with the same material, the plated second metal layer 201 and the first metal sintering connecting layer 300 are metal layers with the same material, so that the metallurgical reaction between the plated second metal layer 201 and the first metal sintering connecting layer 300 is facilitated, and the stability of the bonding interface between the plated second metal layer 201 and the first metal sintering connecting layer 300 is improved. Meanwhile, the current carrying capacity and the heat conducting performance between the plated second metal layer 201 and the first metal sintering connecting layer 300 are improved. As a preferred embodiment, the third metal particles and the first metal particles are both nano silver particles.
In one embodiment, the second metal particles are metal particles made of the same material as the first metal particles and the third metal particles. Through the metal particles with the same material, the first metal layer 101 is plated, the second metal layer 201 is plated and the first metal sintering connecting layer 300 are metal layers with the same material, a metallurgical reaction occurs between the second metal layer 201 and the first metal sintering connecting layer 300, and after the metallurgical reaction occurs between the first metal layer 101 and the first metal sintering connecting layer 300, the integrity of the first metal layer 101 is plated, the second metal layer 201 is plated and the first metal sintering connecting layer 300 is better, and the improvement of current carrying capacity, heat conducting performance and connection stability is facilitated. As a preferred embodiment, the first metal particles, the second metal particles and the third metal particles are all nano silver particles.
In the chip surface connection system, the first metal layer 101 plated on the first connection member and the first metal layer 201 plated on the second connection member are connected by the second metal sintered connection layer 300. Since the plated first metal layer 101 is formed by sintering the second metal particles and the plated second metal layer 201 is formed by sintering the third metal particles, the first metal sintered connection layer 300 is more stable. Based on this, be favorable to improving current-carrying capacity and heat conductivity, simultaneously, the accessible selects for use the melting point first metal particle, second metal particle and the third metal particle that the melting point is higher than tin, improves the restriction operating temperature value of chip.
The embodiment of the invention also provides a power module system.
Fig. 4 is a schematic structural diagram of a power module system according to an embodiment, and as shown in fig. 4, the power module system according to an embodiment includes a base plate and an IGBT power module;
the bottom plate comprises a bottom plate body 400 and a first metal layer 401 arranged on the bottom plate body 400; wherein the first metal layer 401 is composed of second metal particles sintered on one side of the bottom plate body 400;
the IGBT power module comprises an IGBT power module body 500 and a second metal layer 501 arranged on the IGBT power module body 500; the plated second metal layer 501 is composed of third metal particles sintered on one side of the IGBT power module body 500;
the first metal plated layer 401 and the second metal plated layer 501 are connected through a first metal sintered connection layer 300.
The internal space of the IGBT power module body 500 is used for arranging the IGBT power module circuit, and a protective case is provided for the IGBT power module circuit. The plated second metal layer 501 is sintered on one side of the IGBT power module body 500, that is, the third metal particles are sintered on one side surface of the IGBT power module body 500, so as to form a layer of plated second metal layer 501.
Similarly, the plated first metal layer 401 is sintered on one side surface of the bottom plate body 400 by the second metal particles.
The bottom plate body 400 includes a heat dissipation plate or a circuit substrate. When the bottom plate body 400 is a heat sink, when the circuit inside the IGBT power module body 500 operates and generates heat, the heat is conducted to the bottom plate body 400 through the second metal-plated layer 501, the first metal sintered connection layer 300, and the first metal-plated layer 401. In the backplane body 400, the current is transmitted to the backplane body 400 through the second metal plating layer 501, the first metal sintered connection layer 300, and the first metal plating layer 401.
In one of the embodiments, the IGBT power module body 500 includes a mold package, power terminals, and signal terminals;
the second metal plating layer is arranged on one side of the mold sealing body.
The IGBT power module circuit is connected with an external circuit through a power terminal and a signal terminal which are arranged outside the mold sealing body.
Fig. 5 is a schematic structural diagram of an IGBT power module according to an embodiment, and as shown in fig. 5, the IGBT power module according to an embodiment includes a first power terminal 1, a mold package 2, a plated second metal layer 3, a second power terminal 4, a first signal terminal 5, and a second signal terminal 6.
In the power module system, the first metal layer 401 plated on the bottom plate and the second metal layer 501 plated on the IGBT power module are connected through the first metal sintered connection layer 300. Since the plated first metal layer 401 is formed by sintering the second metal particles and the plated second metal layer 501 is formed by sintering the third metal particles, the first metal sintered connection layer 300 is more stable. Based on this, be favorable to improving current-carrying capacity and heat conductivity, simultaneously, the accessible selects for use the melting point first metal particle, second metal particle and the third metal particle that the melting point is higher than tin, improves IGBT power module's restriction operating temperature value.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
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Cited By (1)
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