CN111076856B - Temperature drift self-compensating SOI pressure sensor - Google Patents
Temperature drift self-compensating SOI pressure sensor Download PDFInfo
- Publication number
- CN111076856B CN111076856B CN201910763759.8A CN201910763759A CN111076856B CN 111076856 B CN111076856 B CN 111076856B CN 201910763759 A CN201910763759 A CN 201910763759A CN 111076856 B CN111076856 B CN 111076856B
- Authority
- CN
- China
- Prior art keywords
- resistor
- pressure sensor
- soi
- bridge
- soi substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000002955 isolation Methods 0.000 claims abstract description 19
- 238000002161 passivation Methods 0.000 claims abstract description 16
- 239000011521 glass Substances 0.000 claims description 31
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 7
- 239000005543 nano-size silicon particle Substances 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 10
- 230000035945 sensitivity Effects 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000012528 membrane Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000010923 batch production Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- -1 multilayer metal) Chemical compound 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
本发明涉及一种温漂自补偿SOI压力传感器，其包括SOI衬底，所述SOI衬底上设有用于配置成惠斯通电桥的桥路电阻，且SOI衬底对应设置桥路电阻的表面设置用于对惠斯通电桥进行温度补偿的补偿电阻，所述补偿电阻及桥路电阻上设置电连接的互连引线；桥路电阻及补偿电阻间通过绝缘隔离层及钝化层相隔离，绝缘隔离层覆盖于SOI衬底上，钝化层覆盖于绝缘隔离层上；刻蚀对应于设置桥路电阻另一侧的SOI衬底以形成压力腔及压力敏感膜，所述压力腔及压力敏感膜位于桥路电阻的正下方。本发明结构紧凑，实现温漂自补偿，降低成本，稳定性高，一致性好，适合批量生产，适应范围广，安全可靠。
The present invention relates to a temperature drift self-compensating SOI pressure sensor, which comprises an SOI substrate on which a bridge resistor configured to be a Wheatstone bridge is arranged, and the SOI substrate corresponds to a surface on which the bridge resistor is arranged A compensation resistor for temperature compensation of the Wheatstone bridge is provided, and interconnecting leads electrically connected to the compensation resistor and the bridge resistor are provided; the bridge resistor and the compensation resistor are isolated by an insulating isolation layer and a passivation layer, The insulating isolation layer covers the SOI substrate, and the passivation layer covers the insulating isolation layer; the SOI substrate corresponding to the other side of the bridge resistor is etched to form a pressure chamber and a pressure sensitive film, the pressure chamber and the pressure The sensitive film is located just below the bridge resistor. The invention has compact structure, realizes temperature drift self-compensation, reduces cost, has high stability and good consistency, is suitable for mass production, has wide adaptability and is safe and reliable.
Description
The invention is a divisional application of patent application with the application number of 201110375349.X and the name of the invention of 'temperature drift self-compensation SOI pressure sensor' which is provided on 23.11.2011.
Technical Field
The invention relates to a pressure sensor, in particular to a temperature drift self-compensation SOI pressure sensor, belonging to the technical field of MEMS sensors.
Background
The pressure sensor manufactured by using the piezoresistive effect of silicon is characterized in that a group of diffusion resistors with almost equal resistance values are formed on the surface of a silicon wafer by adopting the ion implantation and diffusion processes in the integrated circuit process, and the resistors are interconnected by metal to form a Wheatstone bridge. When the elastic sensitive diaphragm is deformed under the action of external pressure to generate stress, the bridge circuit resistance on the elastic sensitive diaphragm correspondingly changes, and the sensor outputs an electric signal proportional to the external pressure, so that the pressure is measured.
The piezoresistive micro pressure sensor is the earliest researched and industrialized MEMS (micro electro mechanical system) technical product, most piezoresistive pressure sensors adopt a PN junction isolation mode, and the structure has the defect of overlarge temperature drift; in addition, when the working temperature is higher than 125 ℃, the leakage of the PN junction is rapidly increased, so that the sensor fails. The high temperature pressure sensor is a pressure sensor which can normally work in an environment higher than 125 ℃, has been highly regarded in the pressure sensor by virtue of excellent high temperature working capacity, is one of important fields of sensor research, and is one of high-tech technologies which are mastered by governments in various countries. The high-temperature pressure sensor plays an important role in petroleum, chemical industry, metallurgy, industrial process control, weapon industry and even food industry, the high-temperature pressure sensor can not be used for detection under a plurality of environmental conditions, and particularly the high-temperature pressure sensor in a weapon system is indispensable to a power system.
In addition, since the resistor is a temperature sensitive device, the zero point and the sensitivity of the pressure sensor before compensation change with the change of temperature, which greatly affects the accuracy of the sensor, and the temperature drift compensation is usually performed on the pressure sensor. The conventional pressure sensor compensation is divided into hardware compensation and software compensation, wherein the hardware compensation needs a large amount of manpower, the temperature drift test before compensation is carried out on each chip within the use temperature range, then different devices such as diodes, thermistors and the like are selected for compensation, the consistency is poor, and the workload is large; software compensation cost is high, most of domestic ASIC chips are imported for compensation at present, price is high, and development of domestic sensor industry is limited.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and provides the temperature drift self-compensation SOI pressure sensor which has the advantages of compact structure, realization of temperature drift self-compensation, cost reduction, high stability, wide application range, safety and reliability, is suitable for batch production and greatly improves the working temperature range and has good consistency.
According to the technical scheme provided by the invention, the temperature drift self-compensation SOI pressure sensor comprises an SOI substrate, wherein a bridge resistor which is used for configuring a Wheatstone bridge is arranged on the SOI substrate, a compensation resistor which is used for carrying out temperature compensation on the Wheatstone bridge is arranged on the surface of the SOI substrate, which is correspondingly provided with the bridge resistor, and interconnected leads which are electrically connected are arranged on the compensation resistor and the bridge resistor; the bridge resistor and the compensation resistor are isolated by an insulating isolation layer and a passivation layer, the insulating isolation layer covers the SOI substrate, and the passivation layer covers the insulating isolation layer; and etching the SOI substrate corresponding to the other side where the bridge resistor is arranged to form a pressure chamber and a pressure sensitive film, which are located right below the bridge resistor.
The SOI substrate comprises a substrate, wherein an insulating medium layer is deposited on the substrate, and a conductive material is deposited on the insulating medium layer to form the SOI substrate.
And a glass sheet is bonded on one side of the SOI substrate corresponding to the side for forming the pressure cavity, the glass sheet is correspondingly matched with the SOI substrate and the pressure cavity, and the glass sheet seals the pressure cavity on the SOI substrate.
The glass sheet is provided with a glass hole penetrating through the glass sheet, and the glass hole is communicated with the pressure cavity. The compensation resistor comprises a constant voltage power supply compensation resistor or a constant current power supply compensation resistor.
The insulating medium layer is made of silicon dioxide, silicon nitride or the composition of the silicon dioxide and the silicon nitride. The insulating isolation layer includes a silicon nitride layer.
The passivation layer includes a silicon nitride layer. The material of the interconnection lead comprises aluminum or gold. The conductive material is polysilicon or nano-silicon, and is deposited on the insulating medium layer through LPCVD or PECVD.
The invention has the advantages that: the substrate of the pressure sensor adopts an SOI substrate, so that the stability and the working temperature range of the sensor are greatly improved, and the pressure sensor can be applied to various industrial control fields, particularly high-temperature environments; for the pressure sensor, the temperature drift is a problem which is not easy to solve, and the temperature self-compensation of the pressure sensor is realized by arranging a constant voltage power supply compensation resistor and a constant current power supply compensation resistor on an SOI substrate, and selecting the constant voltage power supply compensation resistor or the constant current power supply compensation resistor to be connected with a Wheatstone bridge configured by bridge resistors according to the requirement; after self-compensation, the zero temperature drift and the sensitivity temperature drift can be effectively controlled, and the requirements of consumer electronics and industrial control can be met; the cost is extremely low due to the integration process; the semiconductor process is adopted, the method is suitable for batch production, the product consistency is good, the sensitivity is high, and the method can be applied to various environments such as micro-pressure, low-pressure, medium-pressure and high-pressure environments.
Drawings
FIG. 1 is a schematic structural diagram of the present invention.
Fig. 2 to 7 are sectional views of the process steps of the present invention, wherein:
fig. 2 is a cross-sectional view of forming an SOI substrate.
FIG. 3 is a cross-sectional view of the bridge resistor and the compensation resistor after they are formed.
Fig. 4 is a cross-sectional view after depositing an insulating spacer and etching a wire hole.
Fig. 5 is a cross-sectional view after forming interconnect leads.
Fig. 6 is a cross-sectional view after forming a passivation layer.
Fig. 7 is a sectional view after forming a pressure sensitive membrane.
Fig. 8 is a cross-sectional view of a bonded glass sheet after forming an absolute pressure sensor.
Fig. 9 is a cross-sectional view of the gauge pressure sensor after formation.
Fig. 10 is a top view of the invention after encapsulation.
Description of reference numerals: 1-substrate, 2-insulating medium layer, 3-bridge circuit resistor, 4-constant voltage power supply compensation resistor, 5-constant current power supply compensation resistor, 6-insulating isolation layer, 7-interconnection lead, 8-passivation layer, 9-pressure cavity, 10-pressure sensitive film, 11-glass sheet and 12-glass hole.
Detailed Description
The invention is further illustrated by the following specific figures and examples.
As shown in fig. 1: in order to improve the measurement accuracy and the temperature adaptive range of the pressure sensor, the pressure sensor comprises an SOI substrate, conductive materials are deposited on the SOI substrate, a bridge resistor 3 which is used for being configured into a Wheatstone bridge is obtained, in order to reduce the temperature drift influence, a compensation resistor is arranged on the SOI substrate and comprises a constant voltage power supply compensation resistor 4 or a constant current power supply compensation resistor 5, the constant voltage power supply compensation resistor 4 and the constant current power supply compensation resistor 5 are arranged on the SOI substrate, the constant voltage power supply compensation resistor 4 or the constant current power supply compensation resistor 5 is selected according to needs, and the influence of temperature on output detection signals of the Wheatstone bridge can be reduced. Four bridge resistors 3 are provided on the SOI substrate, and the four bridge resistors 3 form respective arms of a wheatstone bridge.
In order to lead out the bridge resistor 3, the constant voltage power supply compensation resistor 4 and the constant current power supply compensation resistor 5, the bridge resistor 3, the constant voltage power supply compensation resistor 4 and the constant current power supply compensation resistor 5 are provided with interconnection leads 7 which are electrically connected. Meanwhile, the bridge resistor 3, the constant voltage power supply compensation resistor 4 and the constant current power supply compensation resistor 5 are isolated by an insulating isolation layer 6 and a passivation layer 8, and the insulating isolation layer 6 covers the SOI substrate and covers the bridge resistor 3, the constant voltage power supply compensation resistor 4 and the constant current power supply compensation resistor 5 correspondingly; a passivation layer 8 is deposited overlying the insulating spacer layer 6. The SOI substrate is provided with a pressure cavity 9 corresponding to the other side provided with the bridge resistor 3, in order to form the pressure cavity 9, the process of wet etching or combination of dry etching and wet etching is carried out on the SOI substrate, the pressure cavity 9 extends inwards from the surface of the SOI substrate, the distance of the inward extension of the pressure cavity 9 is less than the thickness of the SOI substrate, so as to form a pressure sensitive film 10, and the thickness of the pressure sensitive film 10 is determined by parameters such as the sensitivity of a pressure sensor. The pressure chamber 9 and the pressure-sensitive membrane 10 are located directly below the bridge resistor 3.
As shown in fig. 8 and 9: according to different requirements, a glass sheet 11 is bonded on one side of the SOI substrate, which correspondingly forms the pressure cavity 9, and the glass sheet 11 is correspondingly matched with the SOI substrate and the pressure cavity 9; thereby enabling the formation of gauge pressure sensors and absolute pressure sensors. When used as a gauge pressure sensor, the glass sheet 11 is perforated with glass holes 12, and the glass holes 12 communicate with the pressure chamber 9. When acting as an absolute pressure sensor, the glass plate 11 closes the pressure chamber 9.
As shown in fig. 2 to 7: in order to obtain the pressure sensor with the structure, the following process steps can be carried out: (1) determining the thickness, doping type and resistivity of a substrate material, the sizes of a chip and a sensitive film and the like according to the parameter requirements of the sensor, determining a linear stress region on the pressure sensitive film 10 through theoretical calculation, and arranging bridge circuit resistance, compensation resistance and metal interconnection; because different power supply modes and temperature drift compensation modes are different, a compensation network for constant voltage power supply and a compensation network for constant current power supply can be integrated on the same chip during design to form a universal chip, and a user can connect the chip according to the needs of the user; finally, completing the design and manufacturing the photoetching plate;
(2) as shown in fig. 2: an insulating medium layer 2 is deposited on the upper surface of the substrate 1, and the insulating medium layer 2 can be silicon dioxide, silicon nitride or a compound of silicon dioxide and silicon nitride and is used as an insulating isolation medium layer of an SOI structure;
(3) depositing polysilicon or growing nano-silicon on the insulating dielectric layer 2 by an LPCVD (low pressure Chemical Vapor deposition) or pecvd (plasma Enhanced Chemical Vapor deposition) deposition technique to form an SOI substrate; because the characteristics of the polycrystalline silicon and the nano silicon are different, the performances of the produced sensors are different;
(4) because the bridge resistor 3 and the compensation resistor have different parameters, the polysilicon or the nano-silicon at the top layer needs to be doped and annealed by adopting different ion implantation concentrations, and the polysilicon or the nano-silicon is etched to form the bridge resistor 3, the constant voltage power supply compensation resistor 4 and the constant current power supply compensation resistor 5 respectively, wherein the parameters of the bridge resistor 3, the constant voltage power supply compensation resistor 4 and the constant current power supply compensation resistor 5 are determined by the theoretical design of the first step and are influenced by the processes of implantation concentration, etching precision and the like, and finally the performances of zero point output, temperature drift and the like of the sensor are influenced; as shown in fig. 3:
(5) depositing an insulating isolation layer 6, as shown in fig. 4, as a metalized isolation layer, wherein the insulating isolation layer 6 may be silicon nitride; photoetching a lead hole and injecting ions at the corresponding end parts of the bridge resistor 3, the constant voltage power supply compensation resistor 4 and the constant current power supply compensation resistor 5 to form an ohmic contact concentrated boron region; by depositing metal interconnect wires 7 within the wire holes, as shown in fig. 5; the metal of the interconnection lead 7 can be aluminum or gold (including multilayer metal), and for a high-temperature pressure sensor chip, gold is used as the lead, the usable temperature range is wider, the maximum usable temperature range can be 350 ℃, and aluminum can be usually used only in the temperature range within 180 ℃;
(6) back-etching the lead and the pressure welding block, and carrying out alloying treatment, as shown in figure 5;
(7) as shown in fig. 6, depositing a passivation layer 8, wherein the passivation layer 8 may be made of silicon nitride and used as a passivation layer of the sensor, and depositing a conductive material to be used as a shielding layer, and etching the passivation layer and the shielding layer to expose a bonding area, i.e., an area corresponding to the interconnection lead 7;
(8) as shown in fig. 7, the back surface of the SOI substrate is etched back, and a pressure chamber 9 with a certain depth is etched by adopting a wet etching process or a dry-wet etching process, wherein a substrate material with a certain thickness is reserved on the pressure chamber 9 to form a pressure sensitive membrane 10 of the sensor, and the thickness of the pressure sensitive membrane 10 is determined by parameters such as the sensitivity of the sensor;
(9) determining whether the glass sheet 11 needs to be bonded according to different applications, wherein the glass sheet 11 is divided into a perforated glass sheet and a non-perforated glass sheet, and a gauge pressure sensor and an absolute pressure sensor can be manufactured respectively; as shown in fig. 8 and 9, absolute pressure product and gauge pressure product, 11 is a glass sheet used in the silicon-glass bonding process, and 12 is a glass hole of glass perforated in the gauge pressure product;
(10) scribing, packaging and testing to finish the preparation of the pressure sensor.
As shown in fig. 1 and 10: when in use, the bridge resistors 3 are respectively connected with corresponding external terminals through corresponding electrodes 7; under zero pressure, theoretically, the resistance values of 4 bridge arm resistors should be the same, the bridge is in a balanced state, and the output of the pressure sensor is 0; when pressure acts on the pressure sensitive film 10, the pressure can cause deformation of the pressure sensitive film 10, after the pressure sensitive film 10 is correspondingly deformed, the impedance value of the bridge circuit resistor 3 can be correspondingly changed, the bridge circuit is not balanced any more, the sensitivity of the pressure sensor can be obtained by detecting an output signal corresponding to an external terminal of the pressure sensor, and detection of an external pressure signal can be realized. The constant-voltage power supply compensation resistor 4 or the constant-current power supply compensation resistor 5 is selected according to requirements and connected with a Wheatstone bridge configured by the bridge resistors 3 through an interconnection lead 7, the constant-current power supply compensation resistor 5 is connected in parallel for compensation, and the constant-voltage power supply compensation resistor 4 is connected in series for compensation. When the temperature changes, the temperature compensation is realized through the voltage division of the constant voltage power supply compensation resistor 4 or the shunt of the constant current power supply compensation resistor 5, and the output precision of the pressure sensor is improved.
The substrate of the pressure sensor adopts the SOI substrate, so that the stability and the working temperature range of the sensor are greatly improved, and the pressure sensor can be applied to various industrial control fields, particularly high-temperature environments; for the pressure sensor, the temperature drift is a problem which is not easy to solve, and the temperature self-compensation of the pressure sensor is realized by arranging a constant voltage power supply compensation resistor 4 and a constant current power supply compensation resistor 5 on an SOI substrate, and selecting the constant voltage power supply compensation resistor 4 or the constant current power supply compensation resistor 5 to be connected with a Wheatstone bridge configured by bridge resistors 3 according to the requirement; after self-compensation, the zero temperature drift and the sensitivity temperature drift can be effectively controlled, and the requirements of consumer electronics and industrial control can be met; the cost is extremely low due to the integration process; the semiconductor process is adopted, the method is suitable for batch production, the product consistency is good, the sensitivity is high, and the method can be applied to various environments such as micro-pressure, low-pressure, medium-pressure and high-pressure environments.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910763759.8A CN111076856B (en) | 2011-11-23 | 2011-11-23 | Temperature drift self-compensating SOI pressure sensor |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110375349XA CN102445301A (en) | 2011-11-23 | 2011-11-23 | Temperature drift self-compensation SOI pressure sensor |
| CN201910763759.8A CN111076856B (en) | 2011-11-23 | 2011-11-23 | Temperature drift self-compensating SOI pressure sensor |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110375349XA Division CN102445301A (en) | 2011-11-23 | 2011-11-23 | Temperature drift self-compensation SOI pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111076856A CN111076856A (en) | 2020-04-28 |
| CN111076856B true CN111076856B (en) | 2021-09-21 |
Family
ID=46008014
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110375349XA Pending CN102445301A (en) | 2011-11-23 | 2011-11-23 | Temperature drift self-compensation SOI pressure sensor |
| CN201910763759.8A Active CN111076856B (en) | 2011-11-23 | 2011-11-23 | Temperature drift self-compensating SOI pressure sensor |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110375349XA Pending CN102445301A (en) | 2011-11-23 | 2011-11-23 | Temperature drift self-compensation SOI pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN102445301A (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103454033B (en) * | 2012-06-01 | 2016-07-06 | 无锡华润华晶微电子有限公司 | Polycrystalline pressure sensor chip and preparation method thereof |
| PL2784462T3 (en) * | 2013-03-27 | 2015-06-30 | Grieshaber Vega Kg | Capacitative pressure measurement cell for detecting the pressure of a medium adjacent to the measurement cell |
| CN104697701A (en) * | 2015-03-16 | 2015-06-10 | 东南大学 | Piezoresistive pressure sensor |
| CN105181217B (en) * | 2015-05-05 | 2018-10-23 | 苏州曼普拉斯传感科技有限公司 | MEMS pressure sensor and its manufacturing method |
| CN104931163B (en) * | 2015-06-24 | 2018-08-17 | 无锡芯感智半导体有限公司 | A kind of double soi structure MEMS pressure sensor chips and preparation method thereof |
| CN105738025A (en) * | 2016-03-24 | 2016-07-06 | 东南大学 | Pressure sensor and preparation mehtod |
| US9878904B1 (en) | 2016-10-25 | 2018-01-30 | Rosemount Aerospace Inc. | MEMS sensor with electronics integration |
| CN106768112A (en) * | 2016-12-30 | 2017-05-31 | 苏州容启传感器科技有限公司 | Thermal flow rate sensor and preparation method thereof and application |
| CN114414123B (en) * | 2022-01-24 | 2023-08-25 | 上海交通大学 | Strain sensor chip on special-shaped metal substrate and in-situ preparation method thereof |
| CN114509190B (en) * | 2022-02-28 | 2025-06-06 | 西安思微传感科技有限公司 | A temperature compensation method for silicon pressure sensor |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63243857A (en) * | 1987-03-31 | 1988-10-11 | Nok Corp | Temperature sensor-incorporated type humidity sensing element |
| JPH0783775A (en) * | 1993-09-14 | 1995-03-31 | Toyoda Mach Works Ltd | Temperature compensation circuit in semiconductor sensor |
| JPH07110277A (en) * | 1993-10-08 | 1995-04-25 | Oki Electric Ind Co Ltd | Silicon pressure sensor |
| CN1514219A (en) * | 2003-07-31 | 2004-07-21 | �Ϻ���ͨ��ѧ | Solid piezoresistive high temperature resistant pressure sensor and preparation method thereof |
| CN1731115A (en) * | 2005-08-18 | 2006-02-08 | 复旦大学 | Monolithic silicon-based SOI high-temperature low-drift pressure sensor |
| CN1823268A (en) * | 2003-05-20 | 2006-08-23 | 霍尼韦尔国际公司 | Integrated resistor network for versatile use in constant current or constant voltage operation of pressure sensors |
| CN1975358A (en) * | 2006-12-14 | 2007-06-06 | 中国航天科技集团公司第六研究院第十一研究所 | Low-temperature film pressure sensor and producing method thereof |
| CN201215517Y (en) * | 2008-05-28 | 2009-04-01 | 伊玛精密电子（苏州）有限公司 | Pressure detecting device with temperature compensation |
| CN101581618A (en) * | 2008-05-14 | 2009-11-18 | 霍尼韦尔国际公司 | Asic compensated pressure sensor with soldered sensor die attach |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3786373A (en) * | 1971-10-01 | 1974-01-15 | Raytheon Co | Temperature compensated acoustic surface wave device |
| US4320664A (en) * | 1980-02-25 | 1982-03-23 | Texas Instruments Incorporated | Thermally compensated silicon pressure sensor |
| JPH01199476A (en) * | 1987-10-28 | 1989-08-10 | Komatsu Ltd | Pressure sensor |
| JP2512220B2 (en) * | 1990-09-03 | 1996-07-03 | 株式会社日立製作所 | Multi-function sensor |
| CN2240145Y (en) * | 1995-11-14 | 1996-11-13 | 机械工业部沈阳仪器仪表工艺研究所 | Polylateral three-cup double-island compound pressure transducer |
| TWI286383B (en) * | 2005-12-23 | 2007-09-01 | Delta Electronics Inc | Semiconductor piezoresistive sensor and operation method thereof |
| CN101706345A (en) * | 2009-10-30 | 2010-05-12 | 江苏大学 | Method for compensating for heat drift of sensibility of micro pressure sensor |
| CN102175362A (en) * | 2011-03-07 | 2011-09-07 | 合肥工业大学 | Multifunctional flexible touch sensor |
-
2011
- 2011-11-23 CN CN201110375349XA patent/CN102445301A/en active Pending
- 2011-11-23 CN CN201910763759.8A patent/CN111076856B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63243857A (en) * | 1987-03-31 | 1988-10-11 | Nok Corp | Temperature sensor-incorporated type humidity sensing element |
| JPH0783775A (en) * | 1993-09-14 | 1995-03-31 | Toyoda Mach Works Ltd | Temperature compensation circuit in semiconductor sensor |
| JPH07110277A (en) * | 1993-10-08 | 1995-04-25 | Oki Electric Ind Co Ltd | Silicon pressure sensor |
| CN1823268A (en) * | 2003-05-20 | 2006-08-23 | 霍尼韦尔国际公司 | Integrated resistor network for versatile use in constant current or constant voltage operation of pressure sensors |
| CN1514219A (en) * | 2003-07-31 | 2004-07-21 | �Ϻ���ͨ��ѧ | Solid piezoresistive high temperature resistant pressure sensor and preparation method thereof |
| CN1731115A (en) * | 2005-08-18 | 2006-02-08 | 复旦大学 | Monolithic silicon-based SOI high-temperature low-drift pressure sensor |
| CN1975358A (en) * | 2006-12-14 | 2007-06-06 | 中国航天科技集团公司第六研究院第十一研究所 | Low-temperature film pressure sensor and producing method thereof |
| CN101581618A (en) * | 2008-05-14 | 2009-11-18 | 霍尼韦尔国际公司 | Asic compensated pressure sensor with soldered sensor die attach |
| CN201215517Y (en) * | 2008-05-28 | 2009-04-01 | 伊玛精密电子（苏州）有限公司 | Pressure detecting device with temperature compensation |
Non-Patent Citations (3)
| Title |
|---|
| MEMS高温压力传感器若干关键技术的研究;颜鹰;《中国优秀硕士学位论文全文数据库信息科技辑》;20060515;正文第3-4、10-13、32-34、38页 * |
| SOI压力传感器及其应用;孙克，吕艳，张东旭;《仪表技术与传感器》;20091015;第398-401页 * |
| 颜鹰.MEMS高温压力传感器若干关键技术的研究.《中国优秀硕士学位论文全文数据库信息科技辑》.2006,第3-4、10-14、32-34、38页. * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111076856A (en) | 2020-04-28 |
| CN102445301A (en) | 2012-05-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111076856B (en) | Temperature drift self-compensating SOI pressure sensor | |
| CN104776951B (en) | A kind of MEMS Piezoresistive Pressure Sensor and preparation method thereof | |
| CN103278270B (en) | Silicon-glass micro pressure sensor chip of island membrane self-packaging structure and manufacturing method | |
| CN201653604U (en) | a pressure sensor | |
| CN213812675U (en) | High-temperature pressure sensor chip for realizing leadless package | |
| CN105444931B (en) | SOI presser sensor chips based on sacrificial layer technology and its manufacturing method | |
| CN112362203A (en) | High-temperature pressure sensor chip suitable for various packaging modes and manufacturing method | |
| CN104931163B (en) | A kind of double soi structure MEMS pressure sensor chips and preparation method thereof | |
| CN104280186B (en) | The preparation of temperature drift self compensation SOI pressure transducer and compensation method | |
| CN104864988B (en) | MEMS pressure sensor of silicon island membrane structure and preparation method thereof | |
| CN101271028A (en) | Pressure sensor chip and method based on silicon-silicon bonding and silicon-on-insulator | |
| CN105424090A (en) | MEMS piezoresistive composite sensor and processing method thereof | |
| CN112880883B (en) | Pressure sensor and method for manufacturing the same | |
| CN105174198A (en) | Acceleration sensor of package structure and preparation method thereof | |
| CN104089642B (en) | Piezoresistive acceleration and pressure integrated sensor and manufacturing method thereof | |
| CN102980712A (en) | Chip-type single-resistor piezoresistive pressure sensor with self-package structure | |
| CN105000529A (en) | Pressure sensor chip based on MEMS (Micro Electro Mechanical System) technology and manufacturing method thereof | |
| CN116332119A (en) | High-temperature and high-pressure resistant MEMS pressure sensor pressure-sensitive chip and preparation method thereof | |
| CN114684774A (en) | A silicon piezoresistive pressure sensor chip and preparation method thereof | |
| CN103196596B (en) | Nanometer film pressure sensor based on sacrificial layer technology and manufacturing method thereof | |
| CN108351267A (en) | Capacitance pressure transducer, and its manufacturing method | |
| CN109341932A (en) | A pressure sensor chip and its manufacturing method | |
| CN116878702A (en) | MEMS piezoresistive pressure sensor resistant to electromagnetic interference and preparation method thereof | |
| CN204718717U (en) | The MEMS pressure sensor of silicon island membrane structure | |
| CN110498387A (en) | A bidirectional strain MEMS pressure sensor preparation method and sensor thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP02 | Change in the address of a patent holder |
Address after: No. 100-17 Dicui Road, Liyuan Development Zone, Wuxi City, Jiangsu Province, 214000 Patentee after: WUXI SENCOCH SEMICONDUCTOR Co.,Ltd. Address before: 214000 1827, floor 1, building A10, No. 777, Jianzhu West Road, Binhu District, Wuxi City, Jiangsu Province Patentee before: WUXI SENCOCH SEMICONDUCTOR Co.,Ltd. |
|
| CP02 | Change in the address of a patent holder | ||
| CP03 | Change of name, title or address |
Address after: No. 100-17 Dicui Road, Liyuan Development Zone, Wuxi City, Jiangsu Province, 214000 Patentee after: Wuxi Xingan Intelligent Technology Co.,Ltd. Country or region after: China Address before: No. 100-17 Dicui Road, Liyuan Development Zone, Wuxi City, Jiangsu Province, 214000 Patentee before: WUXI SENCOCH SEMICONDUCTOR Co.,Ltd. Country or region before: China |
|
| CP03 | Change of name, title or address |