CN1110579C - Plasma reinforcement technology for the surface of tantalum spinning jet - Google Patents
Plasma reinforcement technology for the surface of tantalum spinning jet Download PDFInfo
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- CN1110579C CN1110579C CN98117034A CN98117034A CN1110579C CN 1110579 C CN1110579 C CN 1110579C CN 98117034 A CN98117034 A CN 98117034A CN 98117034 A CN98117034 A CN 98117034A CN 1110579 C CN1110579 C CN 1110579C
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- tantalum
- spinneret
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- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 48
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 238000009987 spinning Methods 0.000 title description 27
- 238000005516 engineering process Methods 0.000 title description 8
- 230000002787 reinforcement Effects 0.000 title 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 24
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 18
- 239000007789 gas Substances 0.000 claims abstract description 17
- 238000005728 strengthening Methods 0.000 claims abstract 3
- 239000001257 hydrogen Substances 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- 238000005086 pumping Methods 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 2
- 230000003746 surface roughness Effects 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract 1
- 239000004753 textile Substances 0.000 abstract 1
- 208000012886 Vertigo Diseases 0.000 description 27
- 238000004381 surface treatment Methods 0.000 description 8
- 150000002431 hydrogen Chemical class 0.000 description 7
- 238000007743 anodising Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 230000008595 infiltration Effects 0.000 description 5
- 238000001764 infiltration Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000005255 carburizing Methods 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000000803 paradoxical effect Effects 0.000 description 1
- 230000036314 physical performance Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
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- Chemical Vapour Deposition (AREA)
Abstract
一种钽喷丝头表面等离子体强化工艺。即在真空容器中，给钽喷丝头加上200-1000V的直流阴级电压，按4∶1-10∶1通入氢氮混合气体，使真空容器内保持100-1000Pa的真空度，调节电参数和真空度，使钽喷丝头保持500-900℃的温度，维持0.5-1.5小时，断电降温，到100℃以下时停气、停泵，取出喷丝头。该工艺成本低廉，处理后喷丝头的形状、尺寸变化小，表面粗糙度低，处理工序少，处理后的喷丝头纺织质量和使用寿命都得到了提高。The invention discloses a surface plasma strengthening process of a tantalum spinneret. That is, in the vacuum container, add a DC cathode voltage of 200-1000V to the tantalum spinneret, and feed a hydrogen-nitrogen mixture gas at a ratio of 4:1-10:1 to maintain a vacuum degree of 100-1000Pa in the vacuum container. Electrical parameters and vacuum degree, keep the tantalum spinneret at a temperature of 500-900°C for 0.5-1.5 hours, turn off the power to cool down, stop the gas and pump when it is below 100°C, and take out the spinneret. The process has low cost, little change in the shape and size of the spinneret after treatment, low surface roughness, less treatment procedures, and improved textile quality and service life of the spinneret after treatment.
Description
Technical field
The present invention relates to a kind of plasma fortified technology, especially the chemical fibre industry plasma fortified technology of surface of tantalum spinning jet.
Background technology
Spinning nozzle is mounted in an important precision component on the man-made fiber spinning-drawing machine spinning part, it also is the base components of spinning moulding, be densely covered with the accurate trumpet type micropore of thousands of diameter Ф 0.05～0.1mm on it, spinning solution becomes silk after the micropore ejection.The quality of spinning nozzle performance directly has influence on the quality and the many index such as cost of labour productivity, silk.
Material to spinning nozzle requires to have: a) erosion resistance requires acidproof, the alkali proof corrosion of energy; B) favorable mechanical processing characteristics; C) enough mechanical and physical performance, indeformable as intensity, hardness to guarantee under the operating pressure of spinning, be unlikely being scratched in the operating process, destroy the micropore shape; D) cheap.Before more than ten years, people replace golden platinum to make spinning nozzle with tantalum gradually, tantalum has fabulous acid corrosion-resistant performance, good precision sizing performance, price only is 1/5th of a gold, the weak point of tantalum is that hardness is low, and the alkali corrosion resistance poor-performing is so people seek to cover the shortage by surface treatment always.
All surface treatment methods are all based on the extremely active chemical property of tantalum, Ta
2O
5Free energy of formation Δ F298 be-1896.5～-1908.2KJ/mol, and the Δ F298 of TaN is-218.2KJ/mo1.As seen, under field conditions (factors), tantalum has very strong spontaneous generation oxide compound, the tendency of nitride.The tendency that generates oxide compound is bigger.Select certain surface treatment method only reaction process to be selected, thereby select satisfactory surface strengthen layer, as hardness, chemical stability, surfaceness, size and change of shape etc.
Existing surface treatment method can be divided into two classes by the treatment media classification: a class is to handle in liquid medium, one class is to handle in gaseous media, whether making alive also can be divided into two classes by workpiece in the surface treatment process, but handles all making alives of great majority now, sees table one for details.
The concrete surface intensified technique kind of report is more at present, is summarized as follows:
1, in containing the lithium fused salt, carries out anodizing, make its surface form lithium tantalate.
2, anodizing in sulfuric acid, phosphoric acid, oxalic acid generates tantalum pentoxide film.
3, in oxygen, nitrogen, carbon monoxide or propane and argon gas, carry out air-breathing or carburizing treatment.
4, with the method for explosive welding stainless steel or pure tantalum and tantalum alloy are combined together to form spinning jet, in nitrogen, handle again.
5, chemical Vapor deposition process depositing TiN;
6, surface ion injects nitrogen.
In the aforesaid method, real in market possession share have only first kind:
The classification of table one treatment process
The defective of aforesaid method is the processing cost height, the surfaceness height, treatment process is many, as anodizing must carry out earlier electrochemical treatment enlarge the aperture to remedy since the aperture that causes of surface treatment dwindle; And the ion in ion implantation moves in high vacuum again with the acceleration of highfield, and mutually probability of collision is less, and its motion is unidimensional basically, thereby its injection can only carry out in one direction, is not suitable for the surface treatment of spinning nozzle.
Summary of the invention
The objective of the invention is to overcome the existing existing defective of process for treating surface, provide a kind of cost very cheap, shape, the dimensional change of handling the back spinning nozzle are little, and surfaceness is low, treatment process is few, the surface Hardening Treatment technology that is applicable to tantalum spinneret that influence factor is few.
Task of the present invention is finished in the following manner, promptly carries out tantalum surface and strengthen in the argon-arc plasma field of hydrogen, nitrogen and other gas.Specifically, the tantalum spinneret of cleaning is placed a vacuum vessel, container is evacuated to the vacuum tightness of the 1Pa order of magnitude; Add the direct current cathode voltage of 200-1000V to tantalum spinneret, and feed the mixed gas of hydrogen and nitrogen, the intrinsic standoff ratio of hydrogen, nitrogen is 4: 1-10: 1; The pumping speed of control pump makes the vacuum tightness that keeps 300-1000Pa in the vacuum vessel, forms even, stable low-temperature plasma in container; Regulate electrical parameter and vacuum tightness, the temperature of tantalum spinneret is remained between 500-900 ℃, kept 0.5-1.5 hour; Outage cooling was stopped the supple of gas or steam to time below 100 ℃, and container is opened in termination of pumping, takes out spinning nozzle.
In the present invention, except that feeding hydrogen and nitrogen, also can feed argon gas and carbonaceous gas in the vacuum vessel.
In the present invention, carbonaceous gas comprises ethanol, acetone, methane or four kinds of carbonaceous gass of acetylene.
In the present invention, processing parameter is summarized as follows the influence of tantalum spinneret:
1, temperature, temperature raise, and permeating speed is accelerated, and helps the formation of the nitride of tantalum simultaneously, and in addition, the solubility with temperature of hydrogen in tantalum raises and descend, after temperature is raised to more than 700 ℃, and elevated temperature again, it is constant that solubleness keeps; And the solubility with temperature rising of nitrogen in tantalum increases always.So elevated temperature helps the infiltration of nitrogen, stop the infiltration of hydrogen, this is favourable to spinning nozzle.But along with the rising of temperature, distortion increases, and surfaceness rises, and is subjected to the restriction of tantalum recrystallization temperature.
2, the time, time lengthening, the infiltration layer thickening, alloying layer thickness and time relation meet mathematical expression S=K * T substantially
(1/2), K is a rate constant, raising with temperature increases.In the time of 650 ℃ 15 μ m/h
(1/2)
3, gas ratio, along with hydrogen, nitrogen partial pressure than increasing, the oxide compound of the tantalum in the upper layer reduces, as H/N during greater than 9: 1, the oxide compound of tantalum disappears substantially.
4, container inner pressure, container inner pressure at first influence electrical parameter, during less than 1Pa or greater than 1500Pa, almost can not form plasma body in total pressure, and this moment, voltage power was voltage of supply, and electric current is zero.In the residing paradoxical discharge of technology of the present invention district, between 1～1500Pa, change total pressure, electric current has a maximum value, and voltage has a mnm., both change on the contrary.Along with pressure increases, the possibility that produces arc-over increases, and arc-over burns out the spinning nozzle surface easily, causes spinning nozzle to be scrapped.Secondly, the sputtering rate of pressure influence cathode surface, pressure is low, and cathode sputtering speed is big, is unfavorable for infiltrating.
5, cathodic current and voltage, both influence each other and can not regulate separately.In total pressure one regularly, both increase simultaneously or descend.As previously mentioned, when changing total pressure, both variation tendencies are opposite.The product of electric current and voltage is the total power of spinning nozzle heating.Total power is higher, and it is faster to heat up, and outlet temperature is higher.Electric current characterizes the ionic current in the plasma body, and the ionic current increase helps the enrichment that material is infiltrated on the surface, thereby increases infiltration rate; Voltage characterizes the single energy of ions in the plasma body.Energy increases, to the sputter increase on spinning nozzle surface.
The selection of process parameters principle is, the spinning nozzle operating pressure is big, and erosion resistance requires high, then adopts thick infiltration layer, promptly selects comparatively high temps, long period.Other parameters almost can be constant.
To be material exist form except that the 4th kind solid-state, liquid, the gaseous state to plasma state.In argon-arc plasma field, though integral energy is not high, single ion energy can be very high, makes the physical and chemical process that can not carry out usually under this temperature can carry out in argon-arc plasma field.As forming diamond 1000 ℃ contain in the C plasma body.The effect of ionic medium body of the present invention can be verified by following test, with an original surface roughness is that the tantalum material of Ra=0.1 μ m is placed in the vacuum, make it simultaneously be in the argon-arc plasma field, another side masks (it is not in the argon-arc plasma field), in identical temperature, atmosphere, keep the identical time, the tantalum piece two sides of so handling is analyzed, and the result is: the one side surfaceness that is in the argon-arc plasma field is 0.3 μ m, and naked eyes look almost no change of surface; And the one side surfaceness that conductively-closed is fallen is 2 μ m, does not have metalluster fully.Through the X-ray diffraction material phase analysis, the upper layer crystalline structure on two sides is also inequality.The existence of visible plasma has changed original chemical reaction, has suppressed more coarse Ta
2O
5Generate.
The present invention is different with ion injection method, vacuum tightness that ion implantation needs are much higher and voltage, thus very high to equipment requirements, and also its injection can only be carried out in one direction, there is not unidirectional problem in the present invention, can be strengthened in all surfaces that are exposed in the plasma body.
The present invention is with respect to existing other treatment process, and tangible characteristics are exactly that processing cost is extremely cheap.As not considering the one-time investment of equipment, it is anodized 1/10th that processing cost of the present invention only is equivalent to, and facility investment is a little more than anodized equipment.
Another advantage of the present invention is that to handle shape, the dimensional change of back spinning nozzle little, do not need to resemble should carry out in advance the anodizing electrochemical treatment enlarge the aperture to remedy since the aperture that surface treatment causes dwindle.In addition, also be minimum through the surfaceness of the spinning nozzle of art breading of the present invention with respect to existing other treatment process, do not need to resemble and carry out aftertreatment the anodizing, treatment process is few, and influence factor is few, technology stability, reproducibility is all fine.The present invention does not have any environmental issue.
The surface of tantalum spinning jet hardness of handling through the present invention can reach HV500～1200, whole non-deformability is strengthened greatly, on the basis of the acid-resistant corrosion that has guaranteed the tantalum spinneret excellence, the alkali corrosion resistance of tantalum spinneret is improved greatly, make its electropotential in the NaOH aqueous solution improve an order of magnitude, erosion rate only is 1/5th of a pure tantalum, and treated tantalum spinneret has the work-ing life of better spinning quality and Geng Gao.
Embodiment
Below in conjunction with embodiment the present invention is described in more detail.
Embodiment 1:
With surfaceness is that the tantalum spinneret of 0.1 μ m places vacuum vessel, be evacuated to 2Pa, add the direct current cathode voltage of 300V to tantalum spinneret, make and form low-temperature plasma in the container, ratio in 9: 1 in container feeds hydrogen, nitrogen, the pumping speed of control pump, make the container internal gas pressure remain on 500 ± 2Pa, regulate electric current and voltage simultaneously, make plasma body even, stable, utilize plasma body that spinning nozzle is heated, heat up and remain on 670 ± 10 ℃, kept 1 hour, the outage cooling, stop the supple of gas or steam to time below 100 ℃, container is opened in termination of pumping, takes out spinning nozzle, can obtain thickness is 15 μ m, hardness be HV0.1Kg500 with TaN and tantalum, the upper layer that nitrogen sosoloid constitutes, surfaceness is 0.3 μ m.
Embodiment 2:
With surfaceness is that the tantalum spinneret of 0.1 μ m places vacuum vessel, is evacuated to 5Pa, adds to tantalum spinneret to make the direct current cathode voltage of 500V and form low-temperature plasma in the container.Ratio in 5: 1 in container feeds hydrogen, nitrogen, and the pumping speed of control pump makes the vacuum tightness that keeps 800 ± 2Pa in the vacuum vessel, regulate electric current and voltage simultaneously, make plasma body even, stable, make the temperature of tantalum spinneret remain on 780 ± 10 ℃, kept 0.7 hour, the outage cooling, to time below 100 ℃ stop the supple of gas or steam, termination of pumping, open container, take out tantalum spinneret and get final product, upper layer hardness is HV0.1Kg600, surfaceness is 0.6 μ m, and thickness is 15 μ m.
Embodiment 3:
With surfaceness is that the tantalum spinneret of 0.1 μ m places vacuum vessel, be evacuated to 8Pa, add the direct current cathode voltage of 800V to tantalum spinneret, make to form low-temperature plasma in the container, in container by 7: 1 ratio feeding hydrogen, nitrogen, the pumping speed of control pump, make the vacuum tightness that keeps 980 ± 2Pa in the vacuum vessel, regulate electric current and voltage simultaneously, make plasma body even, stable, make the temperature of tantalum spinneret remain on 580 ± 10 ℃, kept 1.5 hours, the outage cooling, stop the supple of gas or steam to time below 100 ℃, termination of pumping, open container, take out tantalum spinneret and get final product, hardness is HV0.1Kg500, surfaceness is 0.3 μ m, and thickness is 15 μ m.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98117034A CN1110579C (en) | 1998-11-16 | 1998-11-16 | Plasma reinforcement technology for the surface of tantalum spinning jet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98117034A CN1110579C (en) | 1998-11-16 | 1998-11-16 | Plasma reinforcement technology for the surface of tantalum spinning jet |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1230603A CN1230603A (en) | 1999-10-06 |
| CN1110579C true CN1110579C (en) | 2003-06-04 |
Family
ID=5225334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN98117034A Expired - Fee Related CN1110579C (en) | 1998-11-16 | 1998-11-16 | Plasma reinforcement technology for the surface of tantalum spinning jet |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1110579C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100443629C (en) * | 2006-06-22 | 2008-12-17 | 上海交通大学 | Strengthening method of chemical vapor deposition diamond film on the surface of tantalum spinneret |
| CN108906974B (en) * | 2017-07-27 | 2020-04-14 | 北京华宇创新钽铌科技有限公司 | Film lubrication method in tantalum spinning jet micropore punching process |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6333553A (en) * | 1986-07-24 | 1988-02-13 | Masanobu Nunogaki | Nitriding method with plasma source |
| GB2245601A (en) * | 1988-10-08 | 1992-01-08 | Tecvac Ltd | Surface treatment of metals and alloys |
| JPH04247863A (en) * | 1991-01-25 | 1992-09-03 | Fuji Electric Co Ltd | Formation of metallic nitride layer |
-
1998
- 1998-11-16 CN CN98117034A patent/CN1110579C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6333553A (en) * | 1986-07-24 | 1988-02-13 | Masanobu Nunogaki | Nitriding method with plasma source |
| GB2245601A (en) * | 1988-10-08 | 1992-01-08 | Tecvac Ltd | Surface treatment of metals and alloys |
| JPH04247863A (en) * | 1991-01-25 | 1992-09-03 | Fuji Electric Co Ltd | Formation of metallic nitride layer |
Non-Patent Citations (1)
| Title |
|---|
| 材料科学与工艺，第3卷，第4期 1995-12-01 吴嘉达，伍长征等人，几种难熔过渡金属的激光氮化 * |
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| Publication number | Publication date |
|---|---|
| CN1230603A (en) | 1999-10-06 |
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