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CN111048618A - Schottky barrier diode temperature sensor integrated by interdigital structure and manufacturing method thereof - Google Patents

Schottky barrier diode temperature sensor integrated by interdigital structure and manufacturing method thereof Download PDF

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CN111048618A
CN111048618A CN201911308964.1A CN201911308964A CN111048618A CN 111048618 A CN111048618 A CN 111048618A CN 201911308964 A CN201911308964 A CN 201911308964A CN 111048618 A CN111048618 A CN 111048618A
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temperature sensor
barrier diode
schottky barrier
electrode
diode temperature
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CN111048618B (en
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敖金平
李小波
李柳暗
蒲涛飞
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Ningbo Rhenium Micro Semiconductor Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
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Abstract

本发明涉及一种叉指结构集成的肖特基势垒二极管温度传感器及制法。所述二极管包括依次设置的衬底层、缓冲层、n+‑GaN层、叉指结构和连接部；所述叉指结构包含n‑‑GaN层、欧姆电极和肖特基电极；所述叉指结构之间通过所述连接部进行连接；所述连接的方式包括串联。所述温度传感器通过叉指结构的肖特基势垒二极管进行串联集成，可以提高温度传感器的感度；且叉指结构集成的肖特基势垒二极管温度传感器相比较常规的肖特基势垒温度传感器，其温度敏感度提升了一倍，这样能够有效探测环境温度。

Figure 201911308964

The invention relates to a Schottky barrier diode temperature sensor integrated with an interdigital structure and a manufacturing method. The diode includes a substrate layer, a buffer layer, an n + -GaN layer, an interdigitated structure and a connection part arranged in sequence; the interdigitated structure includes an n - GaN layer, an ohmic electrode and a Schottky electrode; the interdigitated The structures are connected through the connection part; the connection mode includes series connection. The temperature sensor is integrated in series through the interdigitated Schottky barrier diode, which can improve the sensitivity of the temperature sensor; and the interdigitated Schottky barrier diode temperature sensor is compared with the conventional Schottky barrier temperature. The temperature sensitivity of the sensor is doubled, which can effectively detect the ambient temperature.

Figure 201911308964

Description

Schottky barrier diode temperature sensor integrated by interdigital structure and manufacturing method thereof
Technical Field
The invention belongs to the technical field of semiconductor power device integration, and particularly relates to an interdigital structure integrated Schottky barrier diode temperature sensor and a manufacturing method thereof.
Background
GaN-based devices have low power losses and high switching speeds, which are essential to improve power density and energy efficiency in power electronics applications. The application of the photovoltaic power generation system in aspects of electric automobile and smart phone charging stations, photovoltaic inverters, data center power supplies and the like has numerous advantages. However, severe heat dissipation during on-state conduction and on/off switching cycles results in high junction temperatures, which can greatly degrade safe and reliable operation.
The temperature detection of the existing GaN-based power device mainly adopts a single titanium nitride Schottky diode or a pn junction diode with a circular structure, and the temperature sensitivity is relatively low and is usually 1-2 mV/K.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides an interdigital structure integrated Schottky barrier diode temperature sensor and a manufacturing method thereof. The technical problem that the diode serving as the temperature sensor in the prior art is low in sensitivity is solved.
The invention provides an interdigital structure integrated Schottky barrier diode temperature sensor which is characterized by comprising a substrate layer, a buffer layer and n which are sequentially arranged+-a GaN layer, an interdigitated structure and a connection; the interdigital structure comprises n--a GaN layer, an ohmic electrode and a schottky electrode; the interdigital structures are connected through the connecting part; the connection mode comprises series connection.
The principles of the present invention are further explained in order to facilitate an understanding of the present invention.
The Schottky diode shows a strong temperature dependence in a forward bias area, can be used for detecting the ambient temperature according to the linear dependence of bias voltage at different temperatures under the same forward current, and has higher temperature sensitivity and low turn-on voltage by utilizing a series structure formed by the interdigital diode as a temperature sensor.
n+-a GaN layer and n-The GaN-based material in the GaN layer is largeBand gap, high breakdown field, high electron mobility and high electron saturation velocity, n+GaN and titanium/aluminum/titanium/gold forming ohmic contacts reducing the series resistance, n-GaN and titanium nitride form schottky contacts, with which the thermal stability of the device can be improved and the turn-on voltage of the device can be reduced.
When the series integration is adopted, the voltage of each diode can change along with the temperature in the same current, and the voltage is adjusted to be the sum of all the diodes so as to maintain the same current, so that the temperature sensitivity of the temperature sensor can be improved.
Preferably, the connection portion includes a Pad electrode and an air bridge electrode.
Preferably, the schottky barrier diode temperature sensor integrated with the interdigital structure further includes a dielectric layer disposed on the n--a GaN layer and the schottky electrode.
Preferably, the interdigital structures are connected in series and in parallel.
In another aspect of the present invention, a method for manufacturing a schottky barrier diode temperature sensor integrated with an interdigital structure is provided, which includes the following steps:
s1: sequentially forming a buffer layer and n on the surface of the substrate layer by adopting a metal organic chemical vapor deposition method+-a GaN layer and n--a GaN layer, resulting in a sensor intermediate a;
s2: adopting photoetching development technology and dry etching technology to carry out n on sensor intermediate a--etching the GaN layer and forming a platform to obtain a sensor intermediate b;
s3: adopting dry etching technology to carry out n on sensor intermediate b+Etching the GaN layer and the buffer layer and realizing device isolation to obtain a sensor intermediate c;
s4: forming a dielectric layer on the sensor intermediate c by adopting a vapor phase epitaxy technology, and realizing a dielectric layer pattern by using a photoetching development technology and a wet etching technology to obtain a sensor intermediate d;
s5: sequentially forming a titanium/aluminum/titanium/gold metal layer on the surface of the sensor intermediate d by adopting a magnetron sputtering method, stripping the metal outside the region of the ohmic electrode to be formed by adopting a stripping method, and annealing in a nitrogen atmosphere to form the ohmic electrode to obtain a sensor intermediate e;
s6: n in sensor intermediate e by reactive magnetron sputtering method--forming a schottky electrode on the GaN layer to obtain a sensor intermediate f;
s7: and forming a Pad electrode and an air bridge electrode in a Pad area and an air bridge area of the sensor intermediate f by adopting a reactive magnetron sputtering method and an electroplating method, thus obtaining the Schottky barrier diode temperature sensor integrated with the interdigital structure.
Preferably, in step S1, n+Doping concentration of the GaN layer is 1018～1019cm-3；n--the doping concentration of the GaN layer (4) is 5.0 x 1015～6.0×1017cm-3。
Preferably, in step S4, the dielectric layer has a thickness of 100 to 120nm and is made of SiN; the wet etch employs a 15 wt.% HF solution.
Preferably, in step S6, the sputtering target used in the reactive magnetron sputtering method is a titanium target; the reactive magnetron sputtering method is performed after nitrogen is filled in an argon atmosphere.
Preferably, in step S6, in step S6, the material of the schottky electrode is titanium nitride.
Preferably, in step S7, the electroplating is performed by using a gold solution, and the thickness of the electrode is 1 to 2 μm.
The invention has the beneficial effects that:
the Schottky barrier diode temperature sensor integrated by the interdigital structure is integrated in series by the Schottky barrier diode of the interdigital structure, so that the sensitivity of the temperature sensor can be improved; compared with a conventional Schottky barrier temperature sensor, the Schottky barrier diode temperature sensor integrated by the interdigital structure has the advantage that the temperature sensitivity is doubled, so that the environment temperature can be effectively detected.
The preferable scheme of the invention also has the following beneficial effects:
the titanium nitride film layer is in Schottky contact, so that the high-temperature-resistant Schottky barrier diode has high thermal stability and low turn-on voltage, and is more suitable for harsh environments.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic front view of an interdigital structure-integrated schottky barrier diode temperature sensor structure described in example 1.
Fig. 2 is a schematic front view of an interdigital structure-integrated schottky barrier diode temperature sensor structure described in example 2.
Fig. 3 is a schematic top view of an interdigital structure integrated schottky barrier diode temperature sensor structure described in example 2.
Fig. 4 is a schematic front view of an interdigital structure-integrated schottky barrier diode temperature sensor structure described in example 3.
Fig. 5 is a schematic top view of an interdigital structure integrated schottky barrier diode temperature sensor structure described in example 3.
Reference numbers in the figures:
1-a substrate layer; 2-a buffer layer; 3-n+-a GaN layer; 4-n--a GaN layer; 5-a dielectric layer; a 6-ohmic electrode; a 7-Schottky electrode; an 8-Pad electrode; 9-air bridge electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be described in detail below. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the examples given herein without any inventive step, are within the scope of the present invention.
Example 1
The present embodiment provides an interdigital structure integrated schottky barrier diode temperature sensor.
Referring to fig. 1, the schottky barrier diode temperature sensor integrated by the interdigital structure comprises a substrate layer 1, a buffer layer 2 and n which are arranged in sequence+-a GaN layer 3, interdigitated structures and connections; the interdigital structure comprises n-GaN layer 4, ohmic electrode 6 and schottky electrode 7; the interdigital structures are connected through the connecting part; the connection mode comprises series connection, wherein the series connection is formed by connecting the ohmic electrode 6 and the Schottky electrode 7 in series. It is emphasized that the connection method is various and can be selected as required, and the connection method in this embodiment is performed by gold wire, and can also be performed by air bridge or other connection methods.
Example 2
The present embodiment provides an interdigital structure integrated schottky barrier diode temperature sensor.
Referring to fig. 2 and 3, the present embodiment is different from embodiment 1 in that the connection portion of the schottky barrier diode temperature sensor integrated with an interdigital structure includes a Pad electrode 8 and an air bridge electrode 9, and the schottky barrier diode temperature sensor integrated with an interdigital structure further includes a dielectric layer 5 disposed on the n-Between GaN layer 4 and said schottky electrode 7.
Example 3
The present embodiment provides an interdigital structure integrated schottky barrier diode temperature sensor.
Referring to fig. 4 and 5, the present embodiment is different from embodiment 2 in that the inter-digital structures are connected in series and in parallel.
Example 4
The embodiment provides a preparation method of a schottky barrier diode temperature sensor integrated by an interdigital structure, which comprises the following steps:
s1: sequentially forming a buffer on the surface of a substrate layer 1 formed by sapphire by adopting a metal organic chemical vapor deposition methodLayer 2, n+GaN layers 3 and n-A GaN layer 4, where n+The doping concentration of GaN layer 3 is 1018cm-3；n-The doping concentration of the GaN layer 4 is 5.0X 1015cm-3Obtaining a sensor intermediate a;
s2: adopting photoetching development technology and dry etching technology to carry out n on sensor intermediate a--etching the GaN layer 4 and forming a platform to obtain a sensor intermediate b;
s3: adopting dry etching technology to carry out n on sensor intermediate b+The GaN layer 3 and the buffer layer 2 are etched and device isolation is realized, and a sensor intermediate c is obtained;
s4: forming a 100nm thick SiN dielectric layer 5 on the sensor intermediate c by adopting a vapor phase epitaxy technology, and realizing a dielectric layer pattern by adopting a photoetching development technology and a wet etching technology, wherein the wet etching technology adopts 15 wt.% of HF solution to obtain a sensor intermediate d;
s5: sequentially forming titanium/aluminum/titanium/gold metal layers on the surface of the sensor intermediate d by adopting a magnetron sputtering method, stripping the metal outside the region of the ohmic electrode to be formed by adopting a stripping method, and annealing in a nitrogen atmosphere to form an ohmic electrode 6 to obtain a sensor intermediate e;
s6: n in sensor intermediate e by reactive magnetron sputtering method-The GaN layer forms a titanium nitride schottky electrode 7, wherein the reactive magnetron sputtering method uses a titanium target as sputtering target; the reactive magnetron sputtering method is carried out after nitrogen is filled in an argon atmosphere to obtain a sensor intermediate f;
s7: and forming a Pad electrode 8 and an air bridge electrode 9 in a Pad area and an air bridge area of the sensor intermediate f by adopting a reactive magnetron sputtering method and an electroplating method, wherein the thickness of the electrodes is 1 mu m, and thus obtaining the Schottky barrier diode temperature sensor integrated by the interdigital structure.
Example 5
The present embodiment provides a method for manufacturing a schottky barrier diode temperature sensor integrated with an interdigital structure, which is different from embodiment 4 in that: in step S1, n+The doping concentration of GaN layer 3 is 1019cm-3；n-The doping concentration of GaN layer 4 is 6.0X 1017cm-3(ii) a In step S4, a SiN dielectric layer 5 with a thickness of 120nm is formed; in step S7, the electrode thickness was 2 μm. The rest operation steps are consistent.
The foregoing is only an embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of changes or substitutions within the technical scope of the present invention, and all those variations or substitutions are within the scope of the present invention, for example, schottky diodes with other shapes such as circular or square are also within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.

Claims (10)

1.一种叉指结构集成的肖特基势垒二极管温度传感器，其特征在于，包括依次设置的衬底层(1)、缓冲层(2)、n+-GaN层(3)、叉指结构和连接部；所述叉指结构包含n--GaN层(4)、欧姆电极(6)和肖特基电极(7)；所述叉指结构之间通过所述连接部进行连接；所述连接的方式包括串联。1. A Schottky barrier diode temperature sensor integrated in an interdigitated structure, characterized in that it comprises a substrate layer (1), a buffer layer (2), an n + -GaN layer (3), an interdigitated structure arranged in sequence and a connection part; the interdigitated structure includes an n - -GaN layer (4), an ohmic electrode (6) and a Schottky electrode (7); the interdigitated structures are connected through the connection part; the The way of connection includes series connection. 2.根据权利要求1所述叉指结构集成的肖特基势垒二极管温度传感器，其特征在于，所述连接部包含Pad电极(8)和空气桥电极(9)。2 . The Schottky barrier diode temperature sensor integrated with the interdigital structure according to claim 1 , wherein the connection part comprises a Pad electrode ( 8 ) and an air bridge electrode ( 9 ). 3 . 3.根据权利要求2所述叉指结构集成的肖特基势垒二极管温度传感器，其特征在于，还包括介质层(5)，所述介质层(5)设置于所述n--GaN层(4)与所述肖特基电极(7)之间。3. The interdigitated structure-integrated Schottky barrier diode temperature sensor according to claim 2, further comprising a dielectric layer (5), wherein the dielectric layer (5) is disposed on the n -- GaN layer (4) and the Schottky electrode (7). 4.根据权利要求3所述叉指结构集成的肖特基势垒二极管温度传感器，其特征在于，所述叉指结构之间通过串联及并联进行连接。4 . The Schottky barrier diode temperature sensor integrated with the interdigital structure according to claim 3 , wherein the interdigitated structures are connected in series and in parallel. 5 . 5.权利要求4所述叉指结构集成的肖特基势垒二极管温度传感器的制备方法，其特征在于，包括如下步骤：5. the preparation method of the Schottky barrier diode temperature sensor of the described interdigital structure integration of claim 4, is characterized in that, comprises the steps: S1：采用金属有机化学气相沉积法在衬底层(1)表面依次形成缓冲层(2)、n+-GaN层(3)和n--GaN层(4)，得传感器中间体a；S1: a buffer layer (2), an n + -GaN layer (3) and an n - -GaN layer (4) are sequentially formed on the surface of the substrate layer (1) by metal-organic chemical vapor deposition to obtain a sensor intermediate a; S2：采用光刻显影技术和干法刻蚀技术对传感器中间体a的n--GaN层(4)进行刻蚀并形成平台，得传感器中间体b；S2: The n -- GaN layer (4) of the sensor intermediate a is etched by using the photolithography development technology and the dry etching technology to form a platform to obtain the sensor intermediate b; S3：采用干法刻蚀技术对传感器中间体b的n+-GaN层(3)和缓冲层(2)进行刻蚀并实现器件隔离，得传感器中间体c；S3: The n + -GaN layer (3) and the buffer layer (2) of the sensor intermediate b are etched by dry etching technology to achieve device isolation, and the sensor intermediate c is obtained; S4：采用气相外延技术使传感器中间体c形成介质层(5)，并通过光刻显影技术和湿法刻蚀技术实现介质层图形，得传感器中间体d；S4: adopting the vapor phase epitaxy technology to form the medium layer (5) from the sensor intermediate c, and realizing the pattern of the dielectric layer through the photolithography developing technology and the wet etching technology to obtain the sensor intermediate d; S5：采用磁控溅射法于传感器中间体d表面依次形成钛/铝/钛/金金属层，然后采用剥离方法将欲形成欧姆电极区域外的金属剥离，再于氮气气氛中进行退火处理，形成欧姆电极(6)，得传感器中间体e；S5: use the magnetron sputtering method to form titanium/aluminum/titanium/gold metal layers on the surface of the sensor intermediate d in sequence, and then use the peeling method to peel off the metal outside the area where the ohmic electrode is to be formed, and then perform annealing treatment in a nitrogen atmosphere, forming an ohmic electrode (6) to obtain a sensor intermediate e; S6：采用反应性磁控溅射法在传感器中间体e的n--GaN层(4)形成肖特基电极(7)，得传感器中间体f；S6: using reactive magnetron sputtering to form a Schottky electrode (7) on the n -- GaN layer (4) of the sensor intermediate e, to obtain the sensor intermediate f; S7：采用反应性磁控溅射法和电镀方法在传感器中间体f的Pad区域和空气桥区域形成Pad电极(8)和空气桥电极(9)，即得叉指结构集成的肖特基势垒二极管温度传感器。S7: The Pad electrode (8) and the air bridge electrode (9) are formed in the Pad region and the air bridge region of the sensor intermediate f by the reactive magnetron sputtering method and the electroplating method, that is, the Schottky potential integrated with the interdigital structure is obtained. barrier diode temperature sensor. 6.根据权利要求5所述叉指结构集成的肖特基势垒二极管温度传感器的制备方法，其特征在于，步骤S1中，n+-GaN层(3)的掺杂浓度为1018～1019cm-3；n--GaN层(4)的掺杂浓度为5.0×1015～6.0×1017cm-3。6 . The method for preparing a Schottky barrier diode temperature sensor integrated with an interdigitated structure according to claim 5 , wherein in step S1 , the doping concentration of the n + -GaN layer ( 3 ) is 10 18 -10 . 19 cm −3 ; the doping concentration of the n − -GaN layer (4) is 5.0×10 15 to 6.0×10 17 cm −3 . 7.根据权利要求5所述叉指结构集成的肖特基势垒二极管温度传感器的制备方法，其特征在于，步骤S4中，所述介质层(5)厚度为100～120nm，材料为SiN；所述湿法刻蚀采用15wt.％的HF溶液。7 . The preparation method of the Schottky barrier diode temperature sensor integrated with the interdigital structure according to claim 5 , wherein, in step S4 , the thickness of the dielectric layer ( 5 ) is 100-120 nm, and the material is SiN; 7 . The wet etching uses a 15 wt.% HF solution. 8.根据权利要求5所述叉指结构集成的肖特基势垒二极管温度传感器的制备方法，其特征在于，步骤S6中，所述反应性磁控溅射法采用的溅射靶为钛靶；所述反应性磁控溅射法是在氩气气氛中充入氮气后进行的。8 . The method for preparing a Schottky barrier diode temperature sensor integrated with an interdigitated structure according to claim 5 , wherein in step S6 , the sputtering target used in the reactive magnetron sputtering method is a titanium target. 9 . ; The reactive magnetron sputtering method is carried out after being filled with nitrogen in an argon atmosphere. 9.根据权利要求5所述叉指结构集成的肖特基势垒二极管温度传感器的制备方法，其特征在于，步骤S6中，所述肖特基电极(7)的材料为氮化钛。9 . The method for preparing a Schottky barrier diode temperature sensor integrated with an interdigitated structure according to claim 5 , wherein, in step S6 , the material of the Schottky electrode ( 7 ) is titanium nitride. 10 . 10.根据权利要求5所述叉指结构集成的肖特基势垒二极管温度传感器的制备方法，其特征在于，步骤S7中，所述电镀采用金溶液，电极厚度为1～2μm。10 . The method for preparing a Schottky barrier diode temperature sensor integrated with an interdigitated structure according to claim 5 , wherein, in step S7 , the electroplating uses a gold solution, and the electrode thickness is 1-2 μm. 11 .
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114544022A (en) * 2022-02-24 2022-05-27 安徽大学 Slide low-power consumption temperature sensor based on nitride semiconductor heterojunction
CN117878150A (en) * 2024-01-12 2024-04-12 西安电子科技大学 A HEMT with integrated GaN diode temperature sensor and its preparation method
CN118050086A (en) * 2024-02-21 2024-05-17 合肥美镓传感科技有限公司 Integrated temperature Hall sensor and preparation method thereof

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101694842B (en) * 2009-10-20 2013-04-03 中山大学 Power AlGaN/GaN Schottky diode and manufacturing method thereof
CN104638026A (en) * 2015-02-05 2015-05-20 西南科技大学 Diamond schottky barrier diode and preparing method thereof
CN104851921A (en) * 2015-05-21 2015-08-19 中国电子科技集团公司第十三研究所 GaN-based Schottky diode of vertical structure, and manufacture method thereof
US20160380119A1 (en) * 2015-06-23 2016-12-29 Electronics And Telecommunications Research Institute Semiconductor device and method of manufacturing the same
US9666677B1 (en) * 2014-12-23 2017-05-30 Soraa Laser Diode, Inc. Manufacturable thin film gallium and nitrogen containing devices
JP6304520B1 (en) * 2017-07-27 2018-04-04 株式会社レーザーシステム Semiconductor device
CN109540988A (en) * 2018-11-09 2019-03-29 中山大学 Based on interdigital groove structure without reference electrode GaN base pH sensor and preparation method thereof
US20190140110A1 (en) * 2017-11-07 2019-05-09 Arizona Board Of Regents On Behalf Of Arizona State University HIGH-VOLTAGE ALUMINUM NITRIDE (AlN) SCHOTTKY-BARRIER DIODES
CN110137246A (en) * 2019-06-04 2019-08-16 中山大学 A kind of low junction capacity characteristic Terahertz Schottky diode and preparation method thereof

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101694842B (en) * 2009-10-20 2013-04-03 中山大学 Power AlGaN/GaN Schottky diode and manufacturing method thereof
US9666677B1 (en) * 2014-12-23 2017-05-30 Soraa Laser Diode, Inc. Manufacturable thin film gallium and nitrogen containing devices
CN104638026A (en) * 2015-02-05 2015-05-20 西南科技大学 Diamond schottky barrier diode and preparing method thereof
CN104851921A (en) * 2015-05-21 2015-08-19 中国电子科技集团公司第十三研究所 GaN-based Schottky diode of vertical structure, and manufacture method thereof
US20160380119A1 (en) * 2015-06-23 2016-12-29 Electronics And Telecommunications Research Institute Semiconductor device and method of manufacturing the same
JP6304520B1 (en) * 2017-07-27 2018-04-04 株式会社レーザーシステム Semiconductor device
US20190140110A1 (en) * 2017-11-07 2019-05-09 Arizona Board Of Regents On Behalf Of Arizona State University HIGH-VOLTAGE ALUMINUM NITRIDE (AlN) SCHOTTKY-BARRIER DIODES
CN109540988A (en) * 2018-11-09 2019-03-29 中山大学 Based on interdigital groove structure without reference electrode GaN base pH sensor and preparation method thereof
CN110137246A (en) * 2019-06-04 2019-08-16 中山大学 A kind of low junction capacity characteristic Terahertz Schottky diode and preparation method thereof

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
LIUAN LI ET AL: "GaN Schottky Barrier Diode with TiN Electrode for Microwave Rectification", 《JOURNAL OF THE ELECTRON DEVICES SOCIETY》 *
SODJAN KONE,FREDERIC CAYREL ET AL: "DLTS analysis of high resistive edge termination technique-induced defects in GaN-based Schottky barrier diodes", 《PHYS. STATUS SOLIDI A》 *
吴月芳等: "GaN基肖特基势垒二极管结构优化研究进展", 《发光学报》 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114544022A (en) * 2022-02-24 2022-05-27 安徽大学 Slide low-power consumption temperature sensor based on nitride semiconductor heterojunction
CN117878150A (en) * 2024-01-12 2024-04-12 西安电子科技大学 A HEMT with integrated GaN diode temperature sensor and its preparation method
CN117878150B (en) * 2024-01-12 2024-09-10 西安电子科技大学 HEMT integrated with GaN diode temperature sensor and preparation method
CN118050086A (en) * 2024-02-21 2024-05-17 合肥美镓传感科技有限公司 Integrated temperature Hall sensor and preparation method thereof

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