CN111029894A - Semiconductor laser and packaging method thereof - Google Patents
Semiconductor laser and packaging method thereof Download PDFInfo
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- CN111029894A CN111029894A CN201911373954.6A CN201911373954A CN111029894A CN 111029894 A CN111029894 A CN 111029894A CN 201911373954 A CN201911373954 A CN 201911373954A CN 111029894 A CN111029894 A CN 111029894A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 119
- 230000017525 heat dissipation Effects 0.000 claims abstract description 23
- 238000002844 melting Methods 0.000 claims abstract description 12
- 230000008018 melting Effects 0.000 claims abstract description 12
- 239000004020 conductor Substances 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 238000009423 ventilation Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 238000003466 welding Methods 0.000 abstract description 3
- 229910000679 solder Inorganic materials 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000007704 transition Effects 0.000 description 7
- 239000002994 raw material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
A semiconductor laser and its packaging method, this semiconductor laser is bonded on both sides of a heat sink (10) by two insulating circuit boards (9), set up the third bonding material (6) on the upper surface of the heat sink of heat dissipation; a laser Bar (1) is clamped between two first bonding materials (2) and then clamped by two transitional heat sinks (3) to form a sandwich unit, N sandwich units are bonded to a plurality of tiled insulating heat conduction materials (5) through second bonding materials (4), N is an integer larger than 1, the melting point of the second bonding materials (4) is lower than that of the first bonding materials by one temperature level, the melting point of the third bonding materials is lower than that of the first bonding materials, the lower surfaces of the tiled insulating heat conduction materials (5) are in contact with the third bonding materials, two edges of the N sandwich units are provided with electrode leads (8), and the electrode leads (8) are in welding bonding with an insulating circuit board (9) in the vertical direction.
Description
Technical Field
The invention relates to the technical field of semiconductor laser packaging, in particular to a semiconductor laser and a packaging method of the semiconductor laser.
Background
At present, in the technical field of semiconductor laser packaging, especially in the technical field of vertical laminated semiconductor laser packaging, along with the improvement of the power density of a semiconductor laser, the requirement on heat dissipation is higher and higher, and the currently common technical means are as follows: a plurality of bar strips, a transition heat sink and an insulating heat conducting material are bonded into an integral unit by adopting full hard solder (generally adopting AuSn8020), and then the unit is integrally bonded to a heat dissipation heat sink by adopting solder with a lower temperature by one grade. That is, in the prior art, N Bar bars, N +1 transition heat sinks, and N +1 insulating and heat conducting materials are bonded into a whole by using hard solder (generally, Ausn8020), and the whole is then bonded onto a heat sink by using soft solder (generally, indium-based solder).
The main problems with this product are: the production efficiency is low, because the temperature of the solder used for bonding the Bar, the transition heat sink and the insulating heat conduction material is high, one of the Bar and the transition heat sink cannot be disassembled, and once one of the Bar is damaged, the whole product can only be scrapped; in addition, the requirement of the manufacturing process of the technology on the dimensional tolerance precision of the raw materials is also high; meanwhile, the method needs to prefabricate the solder before the transition heat sink is lifted, the cost of prefabricating the solder is high, the technical process consistency is not easy to control, the solder prefabricating technology in China is not mature enough at present, and the raw material waste is serious.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a semiconductor laser, which greatly improves the production efficiency of the semiconductor laser, realizes the maintainability of one Bar of vertical laminated semiconductor laser products after being damaged, reduces the requirement on the dimensional tolerance precision of raw materials, and reduces the production cost without prefabricating solder in advance.
The technical scheme of the invention is as follows: such a semiconductor laser, comprising: the device comprises a laser Bar (1), a first bonding material (2), a transitional heat sink (3), a second bonding material (4), an insulating heat conduction material (5), a third bonding material (6), an electrode lead (8), an insulating circuit board (9) and a heat dissipation heat sink (10);
two insulating circuit boards (9) are bonded on two sides of a heat dissipation heat sink (10), and a third bonding material (6) is arranged on the upper surface of the heat dissipation heat sink (10);
a laser Bar (1) is clamped between two first bonding materials (2) and then clamped by two transitional heat sinks (3) to form a sandwich unit, N sandwich units are bonded to a plurality of tiled insulating heat conduction materials (5) through second bonding materials (4), N is an integer larger than 1, the melting point of the second bonding materials (4) is lower than that of the first bonding materials (2) by one temperature level, the melting point of the third bonding materials (6) is lower than that of the first bonding materials (2), the lower surfaces of the tiled insulating heat conduction materials (5) are in contact with the third bonding materials (6), electrode leads (8) are arranged on two edges of the N sandwich units, and the electrode leads (8) are in welding bonding with an insulating circuit board (9) in the vertical direction.
The invention firstly bonds 1 laser Bar and 2 transition heat sinks into a whole by a first bonding material, the whole forms a sandwich unit, then bonds N sandwich units and a plurality of insulating heat conduction materials into a whole by a second bonding material with a temperature grade lower than that of the first bonding material according to actual requirements, finally bonds a third bonding material onto a heat sink by a third bonding material, wherein, the bonding sequence of the second step and the third step can be exchanged, when one laser Bar is damaged, the damaged sandwich unit can be taken out by heating to a temperature which is lower than that of the first bonding material by a temperature grade, and the sandwich unit is replaced by a new sandwich unit, thereby greatly improving the production efficiency of the semiconductor laser, realizing the maintainability of the vertical laminated semiconductor laser product after one Bar is damaged, the requirement on the dimensional tolerance precision of the raw materials is reduced, and the production cost is reduced without prefabricating the solder in advance.
The packaging method of the semiconductor laser device comprises the following steps:
(1) the two insulated circuit boards are bonded on two sides of a heat dissipation heat sink, and a third bonding material is arranged on the upper surface of the heat dissipation heat sink;
(2) a laser Bar is clamped between two first bonding materials and then clamped by two transitional heat sinks to form a sandwich unit;
(3) the N sandwich units are bonded to the insulating heat conduction materials which are tiled horizontally through second bonding materials, meanwhile, the N sandwich units are bonded between every two adjacent sandwich units through the second bonding materials, the second bonding materials are lower than the first bonding materials by one temperature level, and N is an integer larger than 1;
(4) the lower surfaces of the flat insulating and heat conducting materials are bonded to a third bonding material, the melting point of the third bonding material is lower than that of the first bonding material, electrode leads are arranged on two edges of the N sandwich units, and the electrode leads are welded and bonded with the insulating circuit board.
Drawings
Fig. 1 is a schematic structural diagram of one embodiment of a packaging apparatus for a semiconductor laser according to the present invention.
FIG. 2 is a schematic view of a sandwich unit according to the present invention.
Fig. 3 is a schematic structural diagram of the insulating and heat-conducting material according to the present invention.
Fig. 4 is a schematic structural diagram of another embodiment of a packaging apparatus for a semiconductor laser according to the present invention.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the term "comprises/comprising" and any variations thereof in the description and claims of the present invention and the above-described drawings is intended to cover non-exclusive inclusions, such that a process, method, apparatus, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
As shown in fig. 1, the semiconductor laser includes: the laser bonding device comprises a laser Bar 1, a first bonding material 2, a transitional heat sink 3, a second bonding material 4, an insulating heat conduction material 5, a third bonding material 6, an electrode lead 8, an insulating circuit board 9 and a heat dissipation heat sink 10;
two insulating circuit boards 9 are bonded on two sides of a heat dissipation heat sink 10, and a third bonding material 6 is arranged on the upper surface of the heat dissipation heat sink 10;
a laser Bar 1 is clamped between two first bonding materials 2 and then clamped by two transitional heat sinks 3 to form a sandwich unit (shown in figure 2), N sandwich units are bonded to a plurality of tiled insulating and heat conducting materials 5 through second bonding materials 4, bonding of the adjacent contact surfaces of the N sandwich units in the vertical direction is achieved at the same time, N is an integer larger than 1, the melting point of the second bonding materials 4 is lower than that of the first bonding materials 2 by one temperature level, the melting point of the third bonding materials 6 is lower than that of the first bonding materials 2, the lower surfaces of the tiled insulating and heat conducting materials 5 are in contact with the third bonding materials 6, electrode leads 8 are arranged on two edges of the N sandwich units, and the electrode leads 8 are in welding bonding with an insulating circuit board 9.
The invention firstly bonds 1 laser Bar and 2 transition heat sinks into a whole by a first bonding material, the whole forms a sandwich unit, then bonds N sandwich units and a plurality of insulating heat conducting materials into a whole by a second bonding material with a temperature lower than that of the first bonding material according to actual requirements, and finally bonds a third bonding material onto a heat sink, wherein, the bonding sequence before and after the second step and the third step can be exchanged, when one laser Bar is damaged, the damaged sandwich unit can be taken out by heating to a temperature lower than that of the first bonding material, and simultaneously replaces the damaged sandwich unit by a new sandwich unit, because the second bonding material 4 and the third bonding material 6 are both integrally formed, the edge is aligned with the edge of the insulating heat conducting material, therefore, the production efficiency of the semiconductor laser is greatly improved, the maintainability of the damaged Bar of the vertical laminated semiconductor laser product is realized, the thickness of the second bonding material 4 and the third bonding material 6 can be adjusted according to practical application, the requirement on the dimensional tolerance precision of the raw materials is reduced, and the solder does not need to be prefabricated in advance, so that the production cost is reduced.
Preferably, the side edges of the second bonding material 4 are flush with the outer edges of the plurality of tiled insulating and heat conducting materials 5, so that the design of the fixture in the product packaging process is realized, and the product is neat and beautiful.
Preferably, the second bonding material 4 is integrally formed, which is designed to facilitate easy assembly of the manufacturing process.
Preferably, the number of the insulating and heat-conducting materials 5 is 2N or N + 1; as shown in fig. 4, when the number is 2N, the size of the insulating and heat conducting material at the edge is larger than that of the other insulating and heat conducting materials; as shown in fig. 1, when the number is N +1, the sizes of the insulating and heat conducting materials are equal.
Preferably, as shown in fig. 3, the insulating and heat conducting material 5 comprises a top layer of electrically and thermally conductive layer 51, a base body 52 and a bottom layer of electrically and thermally conductive layer 53, and the distance between the positions of the top layer of electrically and thermally conductive layer 51 corresponding to the laser Bar 1 when two adjacent insulating and heat conducting materials 5 are closely arranged must be greater than the thickness of the laser Bar 1.
Preferably, the semiconductor laser further comprises a fourth bonding material 7, having a thickness of 0.01-0.1mm, disposed between the insulating and thermally conductive materials 5. The height in the vertical direction is less than or equal to 3/4 of the thickness of the insulating and heat-conducting material 5. Ensuring that the third bonding material does not make an electrical connection with the second bonding material during the bonding process. The fourth bonding material may be the same as or different from the third bonding material, and in the bonding process, the fourth bonding material is fused with the third bonding material into a whole after being finally melted, and the fourth bonding material may not be melted.
Preferably, the insulating circuit board 9 is copper-clad tin-plated or gold-plated, and is glued or welded with the heat sink 10. The electrode lead 8 may be made of a metal material having excellent thermal and electrical conductivity, such as copper, tungsten, or copper.
Preferably, the heat sink 10 is gold-plated copper, and a ventilation structure or a water-through structure is arranged inside the heat sink for better heat exchange.
The packaging method of the semiconductor laser device comprises the following steps:
(1) the two insulated circuit boards are bonded on two sides of a heat dissipation heat sink, and a third bonding material is arranged on the upper surface of the heat dissipation heat sink;
(2) a laser Bar is clamped between two first bonding materials and then clamped by two transitional heat sinks to form a sandwich unit;
(3) the N sandwich units are bonded to the insulating heat conduction materials which are tiled flatly through second bonding materials, the second bonding materials are lower than the first bonding materials by one temperature grade, and N is an integer larger than 1;
(4) the lower surfaces of the flat insulating and heat conducting materials are bonded to a third bonding material, the melting point of the third bonding material is lower than that of the first bonding material, electrode leads are arranged on two edges of the N sandwich units, and the electrode leads are welded and bonded with the insulating circuit board.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and all simple modifications, equivalent variations and modifications made to the above embodiment according to the technical spirit of the present invention still belong to the protection scope of the technical solution of the present invention.
Claims (10)
1. A semiconductor laser, characterized by: it includes: the device comprises a laser Bar (1), a first bonding material (2), a transitional heat sink (3), a second bonding material (4), an insulating heat conduction material (5), a third bonding material (6), an electrode lead (8), an insulating circuit board (9) and a heat dissipation heat sink (10);
two insulating circuit boards (9) are bonded on two sides of a heat dissipation heat sink (10), and a third bonding material (6) is arranged on the upper surface of the heat dissipation heat sink (10);
a laser Bar (1) is clamped between two first bonding materials (2) and then clamped through two transitional heat sinks (3) to form a sandwich unit, N sandwich units are bonded to a plurality of tiled insulating and heat conducting materials (5) through second bonding materials (4), N is an integer larger than 1, the second bonding materials (4) are lower than the melting points of the first bonding materials (2) by one temperature level, the melting point of the third bonding materials (6) is lower than that of the first bonding materials (2), the lower surfaces of the tiled insulating and heat conducting materials (5) are in contact with the third bonding materials (6), electrode leads (8) are arranged on two edges of the N sandwich units, and the electrode leads (8) are welded and bonded with an insulating circuit board (9) in the vertical direction.
2. A semiconductor laser as claimed in claim 1 wherein: the side edges of the second bonding material (4) are flush with the outer edges of the tiled insulating and heat conducting materials (5).
3. A semiconductor laser as claimed in claim 2 wherein: the second bonding material (4) is integrally molded.
4. A semiconductor laser as claimed in claim 3 wherein: the number of the insulating heat conduction materials (5) is 2N or N + 1; when the quantity is 2N, the size of the insulating heat conduction material at the edge is larger than that of other insulating heat conduction materials; when the number is N +1, the sizes of the insulating heat conduction materials are equal.
5. A semiconductor laser as claimed in claim 4 wherein: the insulating heat conduction material (5) comprises a top layer heat conduction layer (51), a base body (52) and a bottom layer heat conduction layer (53), and the position distance of the top layer heat conduction layer (51) corresponding to the laser Bar strip (1) when two adjacent insulating heat conduction materials (5) are closely arranged must be larger than the thickness of the laser Bar strip (1).
6. A semiconductor laser as claimed in claim 1 wherein: the semiconductor laser also comprises a fourth bonding material (7) which is arranged between the insulating heat conduction materials (5), the thickness of the fourth bonding material (76) is 0.01-0.1mm, and the height of the fourth bonding material in the vertical direction is less than or equal to 3/4 of the thickness of the insulating heat conduction materials (5).
7. A semiconductor laser as claimed in claim 1, wherein: the third bonding material (6) is placed on the heat dissipation heat sink (10) into a whole, and the side edge of the third bonding material is flush with the outer edge of the plurality of tiled insulating heat conduction materials (5).
8. A semiconductor laser as claimed in claim 1 wherein: the insulating circuit board (9) is coated with copper, tinned or plated with gold, and is glued or welded with the heat dissipation heat sink (10).
9. A semiconductor laser as claimed in claim 1 wherein: the heat dissipation heat sink (10) is made of red copper and plated with gold, and a ventilation structure or a water passing structure is arranged in the heat dissipation heat sink.
10. A packaging method of a semiconductor laser is characterized in that: which comprises the following steps:
(1) the two insulated circuit boards are bonded on two sides of a heat dissipation heat sink, and a third bonding material is arranged on the upper surface of the heat dissipation heat sink;
(2) a laser Bar is clamped between two first bonding materials and then clamped by two transitional heat sinks to form a sandwich unit;
(3) the N sandwich units are bonded to the tiled insulating and heat conducting materials through second bonding materials, the bonding of vertical contact surfaces of the sandwich units adjacent to each other is achieved, the melting point of the second bonding materials is lower than that of the first bonding materials by one temperature level, and N is an integer larger than 1;
(4) the lower surface bottom layer electric and heat conducting layer (53) of the tiled insulating and heat conducting materials is bonded to the heat dissipation heat sink (10) through a third bonding material, the melting point of the third bonding material is lower than that of the first bonding material, two edges of the N sandwich units are provided with electrode leads, the electrode leads are bonded with the top layer electric and heat conducting layer (51) on the upper surface of the insulating and heat conducting material (5) through a second bonding material in the horizontal direction and are welded and bonded with the insulating circuit board in the vertical direction
Wherein the execution sequence of steps (3) and (4) is not limited.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911373954.6A CN111029894A (en) | 2019-12-27 | 2019-12-27 | Semiconductor laser and packaging method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911373954.6A CN111029894A (en) | 2019-12-27 | 2019-12-27 | Semiconductor laser and packaging method thereof |
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| CN111029894A true CN111029894A (en) | 2020-04-17 |
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| CN201911373954.6A Pending CN111029894A (en) | 2019-12-27 | 2019-12-27 | Semiconductor laser and packaging method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112615249A (en) * | 2020-12-18 | 2021-04-06 | 勒威半导体技术(嘉兴)有限公司 | Packaging structure containing transmission grating type semiconductor laser and packaging method thereof |
| CN114284857A (en) * | 2021-11-25 | 2022-04-05 | 佛山华智新材料有限公司 | Secondary heat sink and liquid cooling heat sink integration method, integrated heat sink and application |
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Application publication date: 20200417 |