CN1109518A - SOI integrate circuit chip material containing diamond film and its making technology - Google Patents
SOI integrate circuit chip material containing diamond film and its making technology Download PDFInfo
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- CN1109518A CN1109518A CN 94103623 CN94103623A CN1109518A CN 1109518 A CN1109518 A CN 1109518A CN 94103623 CN94103623 CN 94103623 CN 94103623 A CN94103623 A CN 94103623A CN 1109518 A CN1109518 A CN 1109518A
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- diamond film
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- soi
- monocrystalline silicon
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Abstract
The structure of the integrated circuit chip in order is thin monocrystalline silicon layer, SiO2 transition layer, diamond film, polycrystalline silicon. The processing procedure is to grow SiO2 transition layer, diamond film and polycrystalline slicon layer by layer on the monocrystalline silicon chip, and then the monocrystalline silicon chip is thinned out by ion beam splashing after mechanical polishing. In diamond film growing process, the raw gas is acetone. Present invention features prevention of oxygen and purities from infiltration, radioresistance, small electric leakage, table performance and low interface density.
Description
The invention belongs to a kind of integrate circuit chip material and preparation method thereof.
At present, the material of common radioprotective electron device is the thin layer single crystal silicon material on the insulant, is called the SOI material.The unicircuit of making of the SOI material can be under more heavy dose of irradiation situation works better.The method of existing making SOI material has: go up direct hetero epitaxy silicon single crystal thin layer at insulant (as the sapphire single-chip), or form SiO at monocrystalline silicon surface
2Film is put another monocrystalline silicon piece again in SiO
2Behind the last high temperature bonding again attenuate form soi structure.
The technology that is close most with the present invention is a United States Patent (USP), and name is called " zone melting recrystallization SOD technology ", publication number 5186785, open day on February 16th, 1993.The SOD structure of made is at the monocrystalline silicon sheet surface growing diamond film, and the area of diamond film is less than the surface-area of monocrystalline silicon piece, the thin polysilicon layer of growing on diamond film and monocrystalline silicon piece again.With polysilicon and the contacted silicon single crystal of monocrystalline silicon piece serves as that son is brilliant, and molten through the high-temperature zone, making the crystallization of polysilicon thin layer is the silicon single crystal thin layer.Concrete structure can be referring to Fig. 1.Among Fig. 1,1 is monocrystalline silicon piece, and 2 is diamond film, and 3 is the silicon single crystal thin layer, is to be formed by molten transformation the in polysilicon genital areas, makes electron device and carries out on silicon single crystal thin layer 3.The technological process of prior art is substantially, is substrate through processed conventionally monocrystalline silicon piece 1, is carbon source with the methane gas, growing diamond film 2; Put the polysilicon thin layer on diamond film 2 surfaces, the area of the polysilicon thin layer area merchandiser crystal silicon sheet of being put 1 equates; Zone melting recrystallization at high temperature forms the radioprotective electronic integrated circuit chip material of soi structure.
This SOI material can be worked under comparatively high temps when being made into unicircuit because the existence of diamond film 2 is arranged, and capability of resistance to radiation is strong; Because the polysilicon of being put can be thinner, about about 1 μ m, helps making electron device greatly.But form because silicon single crystal thin layer 3 is genital areas melting recrystallizations, thereby monocrystalline is of poor quality, defective is many, and the electron hole mobility reduces, unstable properties, and capability of resistance to radiation also is limited, and surface finish is poor; Because diamond film 2 is also very thin, influences heat conductivility, and voltage breakdown is reduced; The interface state density that diamond film 2 and silicon single crystal thin layer are 3 is bigger, and the element leakage of making is more serious.
The present invention designs a kind of soi structure that contains diamond film and silicon-dioxide transition layer, and use is with the inflection technology of silicon single crystal attenuate, the electron device capability of resistance to radiation that soi structure material of the present invention is made is strong, integrated level is high, stable performance, good heat conduction effect, voltage breakdown height, reliability improve, make manufacture craft of the present invention avoid that the high-temperature zone is molten, technological process simple and can accurately control the thickness of silicon single crystal thin layer, reach and overcome the insufficient purpose of prior art.
The SOI integrate circuit chip material of diamond film that contains of the present invention is in order by silicon single crystal thin layer, SiO
2Transition layer, diamond film, polysilicon constitute.Wherein the area of diamond film is less than silicon single crystal thin layer and SiO
2The area of transition layer makes diamond film wrap in SiO
2Between transition layer and the polysilicon.
The silicon nitride that skim can also be arranged in the outside surface growth of polysilicon, i.e. Si
4N
3Layer.The composite bed of polysilicon of Xing Chenging and silicon nitride can be prevented the infiltration of block and other impurity effectively in the preparation soi structure like this, plays the effect of protection integrate circuit chip material.
Fig. 2 is a kind of soi structure synoptic diagram of the present invention.
Fig. 3 is the Si of being covered with of the present invention
4N
3The soi structure synoptic diagram of layer.
Among Fig. 2, silicon single crystal thin layer 3 is by monocrystalline silicon piece growth SiO
2Transition 5, diamond film 2 and polysilicon 4 are made after the soi structure, obtain after reduction processing, and its thickness is less than 1 μ m, even can be as thin as 0.4～0.5 μ m.Under this thickness, make unicircuit and have many good characteristics such as capability of resistance to radiation improves, travelling speed increases, leakage current is little, controlled silicon effect reduces, say that therefore the thickness of silicon single crystal thin layer is vital to making unicircuit.Growth has silicon dioxide layer, i.e. SiO between diamond film 2 and silicon single crystal thin layer 3
2Transition layer 5.SiO
2 Transition layer 5 can reduce the interface state density of 3 of diamond film 2 and silicon single crystal thin layers effectively, and the not influence of device performance to making.The polysilicon 4 that is covered with on diamond film 2 surfaces plays a protective role when the preparation soi structure, makes diamond film 2 avoid the infiltration of oxygen and impurity; When carrying out attenuate and making unicircuit, can play a supporting role handled easily again.
In Fig. 3,6 promptly is the Si that is grown on polysilicon 4 outside surfaces
4N
3Layer.Can more effectively shield.
In soi structure of the present invention, SiO
2The thickness of transition layer 5 can be controlled at (0.8～1.0) * 10
-2μ m crosses and thinly will produce the cavity, does not have the purpose of the interface state density that reduces 3 of diamond film 2 and silicon single crystal thin layers; More blocked up good characteristics that may reduce the soi structure that contains diamond film 2.The gauge control of diamond film 2 is crossed the thin heat conductivility and the reduction voltage breakdown that can influence diamond film 2 at 6～15 mu m ranges, and the unicircuit capability of resistance to radiation of making is reduced; And blocked up processing that give to make device brings difficulty.The gauge control of polysilicon 4 supports and provide protection so that can play when attenuate monocrystalline silicon piece and making device about 300 μ m.
The manufacture craft process of the SOI integrate circuit chip material that contains diamond film of the present invention is as described below.
At first with monocrystalline silicon piece process conventional processing, the thin layer of other material of growing.The thin layer of said other material comprises SiO
2Transition layer 5.Again at SiO
2Growing diamond film 2 on the transition layer 5.Growing diamond film 2 is to be carbon-source gas with acetone, adopts heated filament CVD method to grow, and makes the area of the area of diamond film 2 less than monocrystalline silicon piece, promptly at SiO
2The periphery on the surface of transition layer 5 not growth is gone up diamond film 2.On diamond film 2 during growing polycrystalline silicon 4, polysilicon 4 and SiO
2Transition layer 5 is enclosed in diamond film 2 centre of soi structure.At last monocrystalline silicon piece is carried out reduction processing, can use mechanical polishing method earlier, realize with ion beam sputtering method again, monocrystalline silicon piece is thinned to be suitable for making the thickness of unicircuit, constitute silicon single crystal thin layer 3.
Said reduction processing can be earlier with the method for mechanical polishing monocrystalline silicon piece to be thinned to below the 10 μ m, adopts the method for ion beam sputtering that monocrystalline silicon piece is thinned to again and is suitable for making the thickness of unicircuit, as be as thin as 0.4～0.5 μ m.
This other material of growing earlier on monocrystalline silicon piece, behind the formation soi structure, the attenuate monocrystalline silicon piece constitutes the method for silicon single crystal thin layer again, is exactly the inflection technology.
The SOI integrate circuit chip material that contains diamond film of the present invention, because the high resistivity of diamond film 2, good heat-conducting, broad stopband and higher electron hole mobility, the device that makes preparation is under the high dose radiation condition, various performance parameters is stable, voltage breakdown increases, and heat conductivility improves; Because the thermal expansivity of diamond film 2 and silicon is close and growth has SiO
2 Transition layer 5, and have lower interface state density, it is little to make device hourglass electric current, and controlled silicon effect reduces, and capability of resistance to radiation improves; Because the composite bed of deposit spathic silicon 4 or polysilicon and silicon nitride overleaf, stop the oxygen commonly used in unicircuit and the infiltration of other impurity effectively, guarantee the 2 not oxidized and pollutions of intermediary diamond film, provide effective supporting plane for the monocrystalline silicon piece attenuate becomes silicon single crystal thin layer 3 simultaneously.
Preparation of the present invention contains the technology of the SOI integrate circuit chip material of diamond film, owing to adopt the inflection thinning technique, does not have the zone melting recrystallization process, not only make technology simple, and the quality of silicon single crystal thin layer 3 is good, has also guaranteed SiO
2 Transition layer 5 does not form silicon single crystal and plays SiO
2The effect of transition layer; Owing to use acetone to make unstripped gas during growing diamond film 2, make diamond film 2 quality good, can fully show the premium properties of diamond film 2; Owing to adopt the ion beam sputtering thinning technique, can accurately control the quality of the thickness and the bonding crystal silicon thin layer 3 of silicon single crystal thin layer 3, be of value to and on soi structure, make unicircuit, and have high integration and high reliability.
Claims (5)
1, a kind of SOI integrate circuit chip material that contains diamond film, include silicon single crystal thin layer (3) and diamond film (2), the area of diamond film (2) the invention is characterized in that less than the area of silicon single crystal thin layer (3) growth has SiO between silicon single crystal thin layer (3) and diamond film (2)
2Transition layer (5); Be covered with polysilicon (4) on the surface of diamond film (2) again, polysilicon (4) area wraps in SiO greater than diamond film (2) area with diamond film (2)
2Between transition layer (5) and the polysilicon (4).
2,, it is characterized in that skim Si being arranged in the outside surface growth of polysilicon (4) according to the described diamond film SOI integrate circuit chip material that contains of claim 1
4N
3Layer (6), the composite bed of formation polysilicon and silicon nitride.
3, according to claim 1 or the 2 described SOI integrate circuit chip materials that contain diamond film, it is characterized in that said SiO
2The thickness of filtering layer (5) is (0.8～1.0) * 10
-2μ m; The thickness of diamond film (2) is 6～15 μ m; The thickness of silicon single crystal thin layer (3) is 0.4～0.5 μ m.
4, a kind of preparation technology who contains the SOI integrate circuit chip material of diamond film handles monocrystalline silicon piece through routine, and the thin layer of other material of growing by the inflection thinning technique, becomes silicon single crystal thin layer (3) with the monocrystalline silicon piece attenuate; Also growth has diamond film (2) in the middle of the soi structure of preparation, the invention is characterized in:
1. SiO grows on the monocrystalline silicon piece after the conventional processing
2Transition layer (5) is again at SiO
2Filtering layer (5) is gone up growing diamond film (2);
2. said growing diamond film (2) is to be carbon-source gas with acetone, adopt heated filament CVD method to grow out, and the area that makes diamond film (2) is less than the monocrystalline silicon piece area, promptly at SiO
2The periphery on transition layer (5) surface not growth is gone up diamond film (2);
3. go up growing polycrystalline silicon (4) at diamond film (2);
4. said monocrystalline silicon piece is carried out reduction processing is to use mechanical polishing method, realizes with ion beam sputtering method again.
5, according to the described preparation method who contains the SOI integrate circuit chip material of diamond film of claim 4, it is characterized in that said mechanical polishing method is thinned to below the 10 μ m monocrystalline silicon piece, with ion beam sputtering method monocrystalline silicon piece is thinned to 0.4～0.5 μ m again, constitutes silicon single crystal thin layer (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN94103623A CN1041119C (en) | 1994-04-01 | 1994-04-01 | SOI integrate circuit chip material containing diamond film and its making technology |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN94103623A CN1041119C (en) | 1994-04-01 | 1994-04-01 | SOI integrate circuit chip material containing diamond film and its making technology |
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|---|---|
| CN1109518A true CN1109518A (en) | 1995-10-04 |
| CN1041119C CN1041119C (en) | 1998-12-09 |
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| CN94103623A Expired - Fee Related CN1041119C (en) | 1994-04-01 | 1994-04-01 | SOI integrate circuit chip material containing diamond film and its making technology |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100420012C (en) * | 2004-04-19 | 2008-09-17 | 国际商业机器公司 | Structures to improve adhesion between upper CVD low-k dielectrics and their capping layers |
| CN101587902B (en) * | 2009-06-23 | 2011-12-07 | 吉林大学 | Silicon-on-nanometer-insulator material and preparing method thereof |
| CN102102220B (en) * | 2009-12-22 | 2014-02-19 | 中国科学院物理研究所 | Preparation method of graphene on diamond (111) surface |
| CN103787585A (en) * | 2014-02-10 | 2014-05-14 | 北京美顺达技术开发有限公司 | Method for depositing diamond film on quartz substrate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5276338A (en) * | 1992-05-15 | 1994-01-04 | International Business Machines Corporation | Bonded wafer structure having a buried insulation layer |
-
1994
- 1994-04-01 CN CN94103623A patent/CN1041119C/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100420012C (en) * | 2004-04-19 | 2008-09-17 | 国际商业机器公司 | Structures to improve adhesion between upper CVD low-k dielectrics and their capping layers |
| CN101587902B (en) * | 2009-06-23 | 2011-12-07 | 吉林大学 | Silicon-on-nanometer-insulator material and preparing method thereof |
| CN102102220B (en) * | 2009-12-22 | 2014-02-19 | 中国科学院物理研究所 | Preparation method of graphene on diamond (111) surface |
| CN103787585A (en) * | 2014-02-10 | 2014-05-14 | 北京美顺达技术开发有限公司 | Method for depositing diamond film on quartz substrate |
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| Publication number | Publication date |
|---|---|
| CN1041119C (en) | 1998-12-09 |
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