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CN110601146B - IPM over-temperature protection circuit, module and system for flywheel energy storage device - Google Patents

IPM over-temperature protection circuit, module and system for flywheel energy storage device Download PDF

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Publication number
CN110601146B
CN110601146B CN201910851013.2A CN201910851013A CN110601146B CN 110601146 B CN110601146 B CN 110601146B CN 201910851013 A CN201910851013 A CN 201910851013A CN 110601146 B CN110601146 B CN 110601146B
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module
ipm
signal
temperature protection
over
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CN110601146A (en
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李海超
王聪
谢洪生
程祥
王世国
王唯姣
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Shenyang Micro Control Flywheel Technology Co ltd
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Shenyang Micro Control Flywheel Technology Co ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
    • H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/16—Mechanical energy storage, e.g. flywheels or pressurised fluids

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Protection Of Static Devices (AREA)

Abstract

本发明涉及IPM保护电路技术领域，具体涉及一种用于飞轮储能装置的IPM过温保护电路、模块及系统。其中，该IPM过温保护系统适用于1500V的地铁轨道以及200KW的飞轮储能装置，IPM过温保护系统包括：IPM过温保护模块、信号发生模块、IPM模块和线路驱动模块，线路驱动模块分别与IPM模块、信号发生模块、IPM过温保护模块连接，信号发生模块产生并输出第一脉冲信号和第二脉冲信号，线路驱动模块根据IPM过温保护模块输出的过温保护信号控制第一脉冲信号和第二脉冲信号是否传递到IPM模块。通过上述方式，在IPM模块出现过温时，阻断脉冲信号继续传递，使其无法传递到IPM模块，达到保IPM模块的目的，与采用MCU控制器相比，简化装置结构，提高了系统的安全性和准确性。

The present invention relates to the technical field of IPM protection circuits, and specifically to an IPM over-temperature protection circuit, module and system for a flywheel energy storage device. The IPM over-temperature protection system is suitable for 1500V subway tracks and 200KW flywheel energy storage devices. The IPM over-temperature protection system includes: an IPM over-temperature protection module, a signal generating module, an IPM module and a line driving module. The line driving module is respectively connected to the IPM module, the signal generating module and the IPM over-temperature protection module. The signal generating module generates and outputs a first pulse signal and a second pulse signal. The line driving module controls whether the first pulse signal and the second pulse signal are transmitted to the IPM module according to the over-temperature protection signal output by the IPM over-temperature protection module. In the above manner, when the IPM module is overheated, the pulse signal is blocked from continuing to be transmitted, so that it cannot be transmitted to the IPM module, thereby achieving the purpose of protecting the IPM module. Compared with the use of an MCU controller, the device structure is simplified, and the safety and accuracy of the system are improved.

Description

IPM over-temperature protection circuit, module and system for flywheel energy storage device
Technical Field
The invention relates to the technical field of IPM protection circuits, in particular to an IPM over-temperature protection circuit, an IPM over-temperature protection module and an IPM over-temperature protection system for a flywheel energy storage device.
Background
IPM (intelligent power module) is an advanced novel power switching device, which has the advantages of high current density, low saturation voltage and high voltage resistance of GTR (high power transistor), and the advantages of high input impedance, high switching frequency and low driving power of MOSFET (field effect transistor). The IPM has the advantages that the logic, control, detection and protection circuits are integrated inside the IPM, the use is convenient, the application range is wide, the system volume and development time are reduced, the reliability of the system is greatly enhanced, the IPM is suitable for the development direction of the current power devices, such as modularization, recombination and Power Integrated Circuits (PICs), and the IPM is more and more widely focused in the power electronics field.
The IPM is taken as an important component of the control system, and particularly, the processing and protection of the abnormal working state of the IPM are required to be paid attention to in the use process, but the current protection circuit is implemented by sampling the voltage of a direct current bus, the temperature and current signals inside the IPM module and transmitting the sampled signals to a main controller MCU, and comparing and analyzing the sampled data by programming the MCU so as to judge whether the circuit has the conditions of overcurrent, overtemperature and the like, and if the conditions of overcurrent, overtemperature and the like occur, the MCU sends a blocking signal. The method needs combination of software and hardware, increases development difficulty and workload, and the price of the MCU is higher than that of other electronic components, thereby increasing cost.
In view of the above, it is an urgent need in the art to provide a new IPM over-temperature protection circuit, module and system for flywheel energy storage devices.
Disclosure of Invention
The present invention is directed to an IPM overtemperature protection circuit, module and system for a flywheel energy storage device, which address the above-mentioned drawbacks of the prior art.
The aim of the invention can be achieved by the following technical measures:
The embodiment of the invention provides an IPM over-temperature protection circuit for a flywheel energy storage device, which is connected with an IPM module, wherein a first IGBT component and a second IGBT component are arranged in the IPM module, a first temperature sensor is arranged on the first IGBT component, a second temperature sensor is arranged on the second IGBT component, the first temperature sensor is used for collecting the temperature of the first IGBT component, the second temperature sensor is used for collecting the temperature of the second IGBT component, and the IPM over-temperature protection circuit comprises a signal input circuit module, a signal comparison circuit module and a signal output circuit module which are connected in sequence;
the signal input circuit module comprises a first comparison chip, a first voltage dividing circuit and a second voltage dividing circuit, one end of the first voltage dividing circuit is connected with the first temperature sensor, the other end of the first voltage dividing circuit is connected with the negative electrode input end of the first comparison chip, one end of the second voltage dividing circuit is connected with the second temperature sensor, the other end of the second voltage dividing circuit is connected with the positive electrode input end of the first comparison chip, the output end of the first comparison chip is connected with the signal comparison circuit module, the first voltage dividing circuit outputs a first voltage value corresponding to the temperature of the first IGBT component, the second voltage dividing circuit outputs a second voltage value corresponding to the temperature of the second IGBT component, the first comparison chip collects and compares the first voltage value with the second voltage value, and the smaller voltage value of the first voltage value and the second voltage value is used as an input voltage value and is transmitted to the signal comparison circuit module;
The signal comparison circuit module compares the input voltage value with a preset voltage value, and the signal output circuit module outputs an over-temperature protection signal according to the comparison result of the signal comparison circuit module.
According to one embodiment of the present invention, the signal input circuit module further includes an analog switch disposed at an output end of the first comparing chip, the analog switch includes a signal input end connected to the output end of the first comparing chip, a signal output end connected to the signal comparing circuit module, a first input end connected between a negative input end of the first comparing chip and the first voltage dividing circuit, and a second input end connected between a positive input end of the first comparing chip and the second voltage dividing circuit.
According to one embodiment of the invention, the first voltage dividing circuit comprises a first resistor and a second resistor, one end of the first resistor, one end of the second resistor and the negative electrode input end of the first comparison chip are connected with each other, the other end of the first resistor is connected with the first temperature sensor, and the other end of the second resistor is connected with the reference voltage generator.
According to one embodiment of the invention, the second voltage dividing circuit comprises a third resistor and a fourth resistor, one end of the third resistor, one end of the fourth resistor and the positive electrode input end of the first comparison chip are connected with each other, the other end of the third resistor is connected with the second temperature sensor, and the other end of the fourth resistor is connected with the reference voltage generator.
According to one embodiment of the present invention, the signal comparing circuit module includes a second comparing chip and an adjusting circuit, wherein an anode input end of the second comparing chip is connected with the adjusting circuit, a cathode input end of the second comparing chip is connected with the signal output end, an output end of the second comparing chip is connected with the signal output circuit module, the second comparing chip compares the input voltage value with a preset voltage value output by the adjusting circuit, and outputs a comparison result to the signal output circuit module.
According to one embodiment of the invention, the adjusting circuit comprises a fifth resistor and a sixth resistor, wherein the positive electrode input end of the second comparison chip is connected with one end of the fifth resistor and one end of the sixth resistor, the other end of the fifth resistor is grounded, and the other end of the sixth resistor is connected with the reference voltage generator.
According to one embodiment of the invention, the signal output circuit module comprises two NOT chips connected in series in sequence.
The embodiment of the invention provides an IPM over-temperature protection module for a flywheel energy storage device, which comprises the IPM over-temperature protection circuit.
The embodiment of the invention provides an IPM over-temperature protection system for a flywheel energy storage device, which comprises an IPM over-temperature protection module, a signal generation module and a line driving module, wherein the line driving module is respectively connected with the IPM module, the signal generation module and the IPM over-temperature protection module, the signal generation module is used for generating and outputting a first pulse signal and a second pulse signal, when the over-temperature protection signal output by the IPM over-temperature protection module is in a low level state, the line driving module controls the first pulse signal and the second pulse signal to pass through and transmit to the IPM module, and when the over-temperature protection signal output by the IPM over-temperature protection module is in a high level state, the line driving module controls and blocks the first pulse signal and the second pulse signal from transmitting to the IPM module.
According to one embodiment of the present invention, the line driving module includes a signal input pin, an enable pin, and a signal output pin, the enable pin is connected to the IPM over-temperature protection module, the input pin is connected to the signal generating module, the output pin is connected to the IPM module, the first pulse signal and the second pulse signal are transmitted to the IPM module through the enable pin when the over-temperature protection signal is in a low level state, and the enable pin blocks the first pulse signal and the second pulse signal from being transmitted to the IPM module when the over-temperature protection signal is in a high level state.
By adopting the mode, when the temperature of the IGBT component is over-heated, pulse signals are blocked from being continuously transmitted, so that the IPM module cannot be transmitted, the purpose of protecting the IGBT component is achieved, the circuit driving module acts as a switch, and the over-temperature protection signal is output to the circuit driving module to control the passing/blocking of the first pulse signal and the second pulse signal according to the level state of the over-temperature protection signal.
Drawings
Fig. 1 is a schematic structural diagram of an IPM overtemperature protection circuit for a flywheel energy storage device according to the present invention.
Fig. 2 is a schematic structural diagram of an IPM overtemperature protection system for a flywheel energy storage device of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Many aspects of the invention will be better understood hereinafter with reference to the drawings. The components in the drawings are not necessarily to scale. Instead, emphasis is placed upon clearly illustrating the components of the present invention. Furthermore, like reference numerals designate corresponding parts throughout the several views of the drawings.
The words "exemplary" or "illustrative" as used herein mean serving as an example, instance, or illustration. Any embodiment described herein as "exemplary" or "illustrative" is not necessarily to be construed as preferred or advantageous over other embodiments. All of the embodiments described below are exemplary embodiments provided to enable one skilled in the art to make and use examples of the present disclosure and are not intended to limit the scope of the present disclosure, which is defined by the claims. In other instances, well-known features and methods have not been described in detail so as not to obscure the invention. For purposes of this description, the terms "upper," "lower," "left," "right," "front," "rear," "vertical," "horizontal," and derivatives thereof shall relate to the invention as oriented in FIG. 1. Furthermore, there is no intention to be bound by any expressed or implied theory presented in the preceding technical field, background, brief summary or the following detailed description. It is also to be understood that the specific devices and processes illustrated in the attached drawings, and described in the following specification are simply exemplary embodiments of the inventive concepts defined in the appended claims. Thus, specific dimensions and other physical characteristics related to the embodiments disclosed herein are not to be considered as limiting, unless the claims expressly state otherwise.
Referring to fig. 1, the IPM overtemperature protection circuit is connected with an IPM module 10, a first IGBT component (not shown in the figure) and a second IGBT component (not shown in the figure) are arranged in the IPM module 10, a first temperature sensor 20 is arranged on the first IGBT component, a second temperature sensor 30 is arranged on the second IGBT component, the first temperature sensor 20 is used for collecting the temperature of the first IGBT component, the second temperature sensor 30 is used for collecting the temperature of the second IGBT component, and the IPM overtemperature protection circuit comprises a signal input circuit module 40, a signal comparison circuit module 50 and a signal output circuit module 60 which are sequentially connected.
The signal input circuit module 40 includes a first comparing chip 401, a first voltage dividing circuit 402 and a second voltage dividing circuit 403, the first comparing chip 401 is grounded and connected to a reference voltage generator, one end of the first voltage dividing circuit 402 is connected to the first temperature sensor 20, the other end of the first voltage dividing circuit 402 is connected to the negative input end of the first comparing chip 401, one end of the second voltage dividing circuit 403 is connected to the second temperature sensor 30, the other end of the second voltage dividing circuit 403 is connected to the positive input end of the first comparing chip 401, the output end of the first comparing chip 401 is connected to the signal comparing circuit module 50, the first voltage dividing circuit 402 outputs a first voltage value corresponding to the temperature of the first IGBT component, the second voltage dividing circuit 403 outputs a second voltage value corresponding to the temperature of the second IGBT component, the first comparing chip 401 collects and compares the first voltage value with the second voltage value, and transmits the smaller voltage value of the first voltage value and the second voltage value to the signal comparing circuit module 50, and the signal comparing circuit module 50 compares the input voltage value with a preset voltage value and outputs a signal comparison result to the signal comparing circuit module 60 according to the signal comparing result.
In this embodiment, by directly detecting the temperature of the IGBT assembly is equivalent to detecting the temperature of the IPM module 10, the first temperature sensor 20 and the second temperature sensor 30 are equivalent to thermistors, the voltage at TP1 is a first voltage value, the voltage at TP2 is a second voltage value, when the temperature of the first IGBT assembly increases, the resistance of the first temperature sensor 20 decreases, the voltage at TP1 decreases as the resistance of the first temperature sensor 20 decreases, i.e., the voltage at TP1 is inversely proportional to the temperature of the first IGBT assembly, and when the temperature of the second IGBT assembly increases, the resistance of the second temperature sensor 30 decreases, the voltage at TP2 decreases as the resistance of the second temperature sensor 30 decreases, i.e., the voltage at TP2 is inversely proportional to the temperature of the second IGBT assembly.
Further, referring to fig. 1, the signal input circuit module 40 further includes an analog switch 404 disposed at an output end of the first comparing chip 401, the analog switch 404 includes a signal input end (i.e. Vin end) connected to the output end of the first comparing chip 401, a signal output end (i.e. OUT end) connected to the signal comparing circuit module 50, a first input end (i.e. NO end) connected between a negative input end of the first comparing chip 401 and the first voltage dividing circuit 402, and a second input end (i.e. NC end) connected between a positive input end of the first comparing chip 401 and the second voltage dividing circuit 403. The analog switch 404 also includes a ground terminal (i.e., GND terminal) and a power terminal (i.e., vcc terminal) connected to the reference voltage generator.
In this embodiment, when the first voltage value is greater than the second voltage value, the first comparing chip 401 outputs a low level to the analog switch 404, when the signal input terminal is in a low level state, the signal output terminal is connected to the second input terminal, and the second voltage value is transmitted as an input voltage value to the signal comparing circuit module 50, and when the first voltage value is less than the second voltage value, the first comparing chip 401 outputs a high level to the analog switch 404, and when the signal input terminal is in a high level state, the signal output terminal is connected to the first input terminal, and the first voltage value is transmitted as an input voltage value to the signal comparing circuit module 50.
Further, the first voltage dividing circuit 402 includes a first resistor 4021 and a second resistor 4022, one end of the first resistor 4021, one end of the second resistor 4022 and the negative input terminal of the first comparison chip 401 are interconnected, the other end of the first resistor 4021 is connected to the first temperature sensor 20, and the other end of the second resistor 4022 is connected to the reference voltage generator.
Further, the second voltage dividing circuit 403 includes a third resistor 4031 and a fourth resistor 4032, one end of the third resistor 4031, one end of the fourth resistor 4032 and the positive input terminal of the first comparison chip 401 are interconnected, the other end of the third resistor 4031 is connected to the second temperature sensor 30, and the other end of the fourth resistor 4032 is connected to the reference voltage generator.
Further, the signal comparing circuit module 50 includes a second comparing chip 501 and an adjusting circuit 502, the second comparing chip 501 is grounded and connected to the reference voltage generator, the positive input terminal of the second comparing chip 501 is connected to the adjusting circuit 502, the negative input terminal of the second comparing chip 501 is connected to the signal output terminal, the output terminal of the second comparing chip 501 is connected to the signal output circuit module 60, the second comparing chip 501 compares the input voltage value with the preset voltage value output by the adjusting circuit 502, and outputs the comparison result to the signal output circuit module 60. The second comparison chip 501 outputs a low level to the signal output circuit module 60 when the input voltage value is greater than or equal to a preset voltage value, and the second comparison chip 501 outputs a high level to the signal output circuit module 60 when the input voltage value is less than the preset voltage value.
Further, the adjusting circuit 502 includes a fifth resistor 5021 and a sixth resistor 5022, the positive input terminal of the second comparing chip 501 is interconnected with one end of the fifth resistor 5021 and one end of the sixth resistor 5022, the other end of the fifth resistor 5021 is grounded, and the other end of the sixth resistor 5022 is connected with the reference voltage generator. The adjusting circuit 502 adjusts the output voltage (the voltage value at TP 3) of the adjusting circuit 502 to a voltage value (i.e. a preset voltage value) corresponding to the over-temperature by adjusting the fifth resistor 5021 and the sixth resistor 5022.
Further, the signal output circuit module 60 includes two non-gate chips 601 connected in series in sequence. The non-gate chip 601 is used for enhancing and stabilizing a level signal, when the second comparison chip 501 outputs a low level to the signal output circuit module 60, the over-temperature protection signal output by the signal output circuit module 60 is a low level after enhancement and stabilization, which indicates that the signal is normal, and when the second comparison chip 501 outputs a high level to the signal output circuit module 60, the over-temperature protection signal output by the signal output circuit module 60 is a high level after enhancement and stabilization, which indicates that the signal is abnormal.
The embodiment of the invention provides an IPM over-temperature protection module for a flywheel energy storage device, which includes the above IPM over-temperature protection circuit, and the IPM over-temperature protection circuit is described in detail above and is not described herein again.
The embodiment of the invention provides an IPM over-temperature protection system for a flywheel energy storage device, which is suitable for a 1500V subway rail and a 200KW flywheel energy storage device. Fig. 2 is a schematic structural diagram of an IPM over-temperature protection system for a flywheel energy storage device, please refer to fig. 2, where the IPM over-temperature protection system includes the IPM over-temperature protection module 1, the signal generation module 2, the IPM module 3 and the line driving module 4, the line driving module 4 is connected with the IPM module 3, the signal generation module 2 and the IPM over-temperature protection module 1 respectively, the signal generation module 2 is used for generating and outputting a first pulse signal and a second pulse signal, when the over-temperature protection signal output by the IPM over-temperature protection module 1 is in a low level state, the line driving module 4 controls the first pulse signal and the second pulse signal to pass through and transmit to the IPM module 3, and when the over-temperature protection signal output by the IPM over-temperature protection module 1 is in a high level state, the line driving module 4 controls to block the first pulse signal and the second pulse signal from transmitting to the IPM module 3.
Further, the line driving module 4 includes a signal input pin, an enable pin and a signal output pin, the enable pin is connected with the IPM overtemperature protection module 1, the input pin is connected with the signal generating module 2, the output pin is connected with the IPM module 3, when the overtemperature protection signal is in a low level state, the first pulse signal and the second pulse signal are transmitted to the IPM module 3 through the enable pin, and when the overtemperature protection signal is in a high level state, the enable pin blocks the first pulse signal and the second pulse signal from being transmitted to the IPM module 3.
By the mode, when the IPM module 3 is over-heated, pulse signals are blocked from being transmitted continuously, so that the aim of protecting IGBT components on the IPM module 3 is fulfilled, the circuit driving module 4 acts as a switch, and the over-temperature protection signals are output to the circuit driving module 4 to control the passing/blocking of the first pulse signals and the second pulse signals according to the level state of the over-temperature protection signals.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.

Claims (10)

1.一种用于飞轮储能装置的IPM过温保护电路，其特征在于，该IPM过温保护电路与IPM模块连接，所述IPM模块中设有第一IGBT组件和第二IGBT组件，所述第一IGBT组件上设有第一温度传感器，所述第二IGBT组件上设有第二温度传感器，所述第一温度传感器用于采集所述第一IGBT组件的温度，所述第二温度传感器用于采集第二IGBT组件的温度，该IPM过温保护电路包括：依次连接的信号输入电路模块、信号比较电路模块和信号输出电路模块；1. An IPM over-temperature protection circuit for a flywheel energy storage device, characterized in that the IPM over-temperature protection circuit is connected to an IPM module, the IPM module is provided with a first IGBT component and a second IGBT component, the first IGBT component is provided with a first temperature sensor, the second IGBT component is provided with a second temperature sensor, the first temperature sensor is used to collect the temperature of the first IGBT component, the second temperature sensor is used to collect the temperature of the second IGBT component, the IPM over-temperature protection circuit comprises: a signal input circuit module, a signal comparison circuit module and a signal output circuit module connected in sequence; 所述信号输入电路模块包括第一比较芯片、第一分压电路以及第二分压电路，所述第一分压电路的一端与所述第一温度传感器连接，所述第一分压电路的另一端与所述第一比较芯片的负极输入端连接，所述第二分压电路的一端与所述第二温度传感器连接，所述第二分压电路的另一端与所述第一比较芯片的正极输入端连接，所述第一比较芯片的输出端与所述信号比较电路模块连接，所述第一分压电路输出与所述第一IGBT组件的温度对应的第一电压值，所述第二分压电路输出与所述第二IGBT组件的温度对应的第二电压值，所述第一比较芯片采集并比较所述第一电压值和第二电压值，将所述第一电压值和第二电压值中较小的电压值作为输入电压值，并传输给所述信号比较电路模块；The signal input circuit module includes a first comparison chip, a first voltage divider circuit and a second voltage divider circuit, one end of the first voltage divider circuit is connected to the first temperature sensor, the other end of the first voltage divider circuit is connected to the negative input end of the first comparison chip, one end of the second voltage divider circuit is connected to the second temperature sensor, the other end of the second voltage divider circuit is connected to the positive input end of the first comparison chip, the output end of the first comparison chip is connected to the signal comparison circuit module, the first voltage divider circuit outputs a first voltage value corresponding to the temperature of the first IGBT component, the second voltage divider circuit outputs a second voltage value corresponding to the temperature of the second IGBT component, the first comparison chip collects and compares the first voltage value and the second voltage value, takes the smaller voltage value of the first voltage value and the second voltage value as the input voltage value, and transmits it to the signal comparison circuit module; 所述信号比较电路模块将所述输入电压值与预设电压值进行比较，所述信号输出电路模块根据所述信号比较电路模块的比较结果输出过温保护信号。The signal comparison circuit module compares the input voltage value with a preset voltage value, and the signal output circuit module outputs an over-temperature protection signal according to the comparison result of the signal comparison circuit module. 2.根据权利要求1所述的IPM过温保护电路，其特征在于，所述信号输入电路模块还包括设于所述第一比较芯片的输出端的模拟开关，所述模拟开关包括与所述第一比较芯片的输出端连接的信号输入端、与所述信号比较电路模块连接的信号输出端、接于所述第一比较芯片的负极输入端与所述第一分压电路之间的第一输入端以及接于所述第一比较芯片的正极输入端与所述第二分压电路之间的第二输入端。2. The IPM over-temperature protection circuit according to claim 1 is characterized in that the signal input circuit module also includes an analog switch arranged at the output end of the first comparison chip, and the analog switch includes a signal input end connected to the output end of the first comparison chip, a signal output end connected to the signal comparison circuit module, a first input end connected between the negative input end of the first comparison chip and the first voltage divider circuit, and a second input end connected between the positive input end of the first comparison chip and the second voltage divider circuit. 3.根据权利要求1所述的IPM过温保护电路，其特征在于，所述第一分压电路包括第一电阻和第二电阻，第一电阻的一端、第二电阻的一端和所述第一比较芯片的负极输入端互连，第一电阻的另一端与所述第一温度传感器连接，第二电阻的另一端与参考电压发生器连接。3. The IPM over-temperature protection circuit according to claim 1 is characterized in that the first voltage divider circuit comprises a first resistor and a second resistor, one end of the first resistor, one end of the second resistor and the negative input end of the first comparison chip are interconnected, the other end of the first resistor is connected to the first temperature sensor, and the other end of the second resistor is connected to the reference voltage generator. 4.根据权利要求3所述的IPM过温保护电路，其特征在于，所述第二分压电路包括第三电阻和第四电阻，第三电阻的一端、第四电阻的一端和所述第一比较芯片的正极输入端互连，第三电阻的另一端与所述第二温度传感器连接，第四电阻的另一端与参考电压发生器连接。4. The IPM over-temperature protection circuit according to claim 3 is characterized in that the second voltage divider circuit comprises a third resistor and a fourth resistor, one end of the third resistor, one end of the fourth resistor and the positive input end of the first comparison chip are interconnected, the other end of the third resistor is connected to the second temperature sensor, and the other end of the fourth resistor is connected to the reference voltage generator. 5.根据权利要求2所述的IPM过温保护电路，其特征在于，所述信号比较电路模块包括第二比较芯片和调整电路，所述第二比较芯片的正极输入端与调整电路连接，所述第二比较芯片的负极输入端与所述信号输出端连接，所述第二比较芯片的输出端与所述信号输出电路模块连接，所述第二比较芯片将所述输入电压值与所述调整电路输出的预设电压值进行比较，输出比较结果给所述信号输出电路模块。5. The IPM over-temperature protection circuit according to claim 2 is characterized in that the signal comparison circuit module includes a second comparison chip and an adjustment circuit, the positive input terminal of the second comparison chip is connected to the adjustment circuit, the negative input terminal of the second comparison chip is connected to the signal output terminal, the output terminal of the second comparison chip is connected to the signal output circuit module, and the second comparison chip compares the input voltage value with the preset voltage value output by the adjustment circuit, and outputs the comparison result to the signal output circuit module. 6.根据权利要求5所述的IPM过温保护电路，其特征在于，所述调整电路包括第五电阻、第六电阻，所述第二比较芯片的正极输入端与第五电阻的一端、第六电阻的一端互连，第五电阻的另一端接地，第六电阻的另一端与参考电压发生器连接。6. The IPM over-temperature protection circuit according to claim 5 is characterized in that the adjustment circuit includes a fifth resistor and a sixth resistor, the positive input terminal of the second comparison chip is interconnected with one end of the fifth resistor and one end of the sixth resistor, the other end of the fifth resistor is grounded, and the other end of the sixth resistor is connected to a reference voltage generator. 7.根据权利要求1所述的IPM过温保护电路，其特征在于，所述信号输出电路模块包括依次串联的两个非门芯片。7 . The IPM over-temperature protection circuit according to claim 1 , wherein the signal output circuit module comprises two NOT gate chips connected in series. 8.一种用于飞轮储能装置的IPM过温保护模块，其特征在于，所述IPM过温保护模块包括如权利要求1至7任意一项所述的IPM过温保护电路。8. An IPM over-temperature protection module for a flywheel energy storage device, characterized in that the IPM over-temperature protection module comprises the IPM over-temperature protection circuit according to any one of claims 1 to 7. 9.一种用于飞轮储能装置的IPM过温保护系统，其特征在于，所述IPM过温保护系统包括：如权利要求8所述的IPM过温保护模块、信号发生模块和线路驱动模块，所述线路驱动模块分别与所述IPM模块、所述信号发生模块、所述IPM过温保护模块连接，所述信号发生模块用于产生并输出第一脉冲信号和第二脉冲信号，当所述IPM过温保护模块输出的过温保护信号为低电平状态，所述线路驱动模块控制所述第一脉冲信号和第二脉冲信号通过并传递到所述IPM模块，当所述IPM过温保护模块输出的过温保护信号为高电平状态，所述线路驱动模块控制阻断所述第一脉冲信号和第二脉冲信号传递到所述IPM模块。9. An IPM over-temperature protection system for a flywheel energy storage device, characterized in that the IPM over-temperature protection system comprises: the IPM over-temperature protection module, signal generating module and line driving module as described in claim 8, the line driving module is respectively connected to the IPM module, the signal generating module and the IPM over-temperature protection module, the signal generating module is used to generate and output a first pulse signal and a second pulse signal, when the over-temperature protection signal output by the IPM over-temperature protection module is in a low level state, the line driving module controls the first pulse signal and the second pulse signal to pass through and be transmitted to the IPM module, when the over-temperature protection signal output by the IPM over-temperature protection module is in a high level state, the line driving module controls to block the first pulse signal and the second pulse signal from being transmitted to the IPM module. 10.根据权利要求9所述的IPM过温保护系统，其特征在于，所述线路驱动模块包括信号输入引脚、使能引脚和信号输出引脚，所述使能引脚与所述IPM过温保护模块连接，所述输入引脚与所述信号发生模块连接，所述输出引脚与所述IPM模块连接，当所述过温保护信号处于低电平状态时，所述第一脉冲信号和第二脉冲信号通过所述使能引脚传递到所述IPM模块，当所述过温保护信号处于高电平状态时，所述使能引脚阻断所述第一脉冲信号和第二脉冲信号传递到所述IPM模块。10. The IPM over-temperature protection system according to claim 9 is characterized in that the line driving module includes a signal input pin, an enable pin and a signal output pin, the enable pin is connected to the IPM over-temperature protection module, the input pin is connected to the signal generating module, and the output pin is connected to the IPM module. When the over-temperature protection signal is in a low level state, the first pulse signal and the second pulse signal are transmitted to the IPM module through the enable pin. When the over-temperature protection signal is in a high level state, the enable pin blocks the first pulse signal and the second pulse signal from being transmitted to the IPM module.
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