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CN110499483B - A single-stage homogenization annealing process for highly alloyed GH4720Li alloy - Google Patents

A single-stage homogenization annealing process for highly alloyed GH4720Li alloy Download PDF

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CN110499483B
CN110499483B CN201910902863.0A CN201910902863A CN110499483B CN 110499483 B CN110499483 B CN 110499483B CN 201910902863 A CN201910902863 A CN 201910902863A CN 110499483 B CN110499483 B CN 110499483B
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马腾飞
张于胜
李宇力
周宣
张平祥
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Northwest Institute for Non Ferrous Metal Research
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Abstract

本发明公开了一种高合金化GH4720Li合金单级均匀化退火工艺,该工艺包括以下步骤:步骤一、将高合金化GH4720Li合金以10℃/min~20℃/min的升温速率加热至1120℃;步骤二、将步骤一中加热至1120℃的高合金化GH4720Li合金以1℃/min~5℃/min的升温速率加热至1180℃~1230℃后保温8h~28h,然后进行炉冷。本发明通过控制单级均匀化的升温速率、温度和保温时间消除了高合金化GH4720Li合金中存在的(γ+γ′)共晶相和硼化物低熔点析出相,促进了Al、Ti、W、Mo元素充分扩散,消除了元素偏析,且退火过程中不会发生过烧现象,得到成分均匀的高合金化GH4720Li合金。

Figure 201910902863

The invention discloses a single-stage homogenization annealing process of a high alloyed GH4720Li alloy. The process includes the following steps: Step 1. The high alloyed GH4720Li alloy is heated to 1120°C at a heating rate of 10°C/min to 20°C/min. Step 2: The high alloyed GH4720Li alloy heated to 1120°C in step 1 is heated to 1180°C to 1230°C at a heating rate of 1°C/min to 5°C/min, and then kept for 8h to 28h, and then furnace cooled. The invention eliminates (γ+γ′) eutectic phase and boride low melting point precipitation phase existing in high alloyed GH4720Li alloy by controlling the heating rate, temperature and holding time of single-stage homogenization, and promotes Al, Ti, W , Mo element is fully diffused, element segregation is eliminated, and no over-burning phenomenon occurs during annealing process, and high alloyed GH4720Li alloy with uniform composition is obtained.

Figure 201910902863

Description

一种高合金化GH4720Li合金单级均匀化退火工艺A single-stage homogenization annealing process for highly alloyed GH4720Li alloy

技术领域technical field

本发明属于金属材料及其加工领域,具体涉及一种高合金化GH4720Li合金单级均匀化退火工艺。The invention belongs to the field of metal materials and processing thereof, in particular to a single-stage homogenization annealing process of a high-alloyed GH4720Li alloy.

背景技术Background technique

高温合金是先进的航空航天发动机关键的热端材料,包括涡轮盘、涡轮叶片、导向叶片和燃烧室等热端部件,其在先进航空发动机中应用比例超过40%。为了满足现代航空工业快速发展的需求,高温合金中往往添加更高含量的Al、Ti等γ′相元素,以及W、Mo、Nb等难熔金属元素,导致宏、微观偏析程度较高。并且随着合金化程度的提高和锭型的扩大,合金凝固偏析倾向加剧,严重的凝固偏析会导致铸锭枝晶组织十分发达,在枝晶间形成大量有害脆性相,从而恶化合金的热加工性能。现有技术采用真空感应熔炼(VIM)、保护气氛电渣重熔(ESR)和真空自耗重熔(VAR)三联工艺熔炼的锭型为Φ508mm的高合金化GH4720Li合金,其中存在较为严重的Al、Ti、W、Mo等元素偏析、枝晶间形成大量的(γ+γ′)共晶相和硼化物等低熔点析出相等缺点。因此,熔炼后的高合金化高温合金在开坯锻造前一般都要经过均匀化退火来溶解枝晶间共晶相、低熔点析出相和尽可能的消除元素偏析,从而改善高合金化高温合金的热加工性能。Superalloys are key hot-end materials for advanced aerospace engines, including hot-end components such as turbine disks, turbine blades, guide vanes, and combustion chambers, and their application ratio in advanced aeroengines exceeds 40%. In order to meet the needs of the rapid development of the modern aviation industry, higher content of γ' phase elements such as Al and Ti, and refractory metal elements such as W, Mo, and Nb are often added to superalloys, resulting in a higher degree of macro and micro segregation. And with the improvement of alloying degree and the expansion of ingot shape, the tendency of alloy solidification and segregation intensifies. Severe solidification segregation will lead to a very developed dendrite structure of the ingot, and a large number of harmful brittle phases will be formed between the dendrites, thereby deteriorating the hot working of the alloy. performance. The prior art adopts vacuum induction melting (VIM), protective atmosphere electroslag remelting (ESR) and vacuum consumable remelting (VAR) triple process to smelt high alloyed GH4720Li alloy with ingot shape of Φ508mm, in which there is relatively serious Al alloy. , Ti, W, Mo and other elements segregation, the formation of a large number of (γ+γ') eutectic phases between dendrites and low melting point precipitation of borides and other disadvantages. Therefore, the smelted high-alloying superalloy generally needs to undergo homogenization annealing before billet forging to dissolve the interdendritic eutectic phase, the low-melting-point precipitation phase and eliminate element segregation as much as possible, thereby improving the high-alloying superalloy. hot workability.

针对GH4169等高合金化高温合金的均匀化退火工艺研究相对成熟,并且已经形成了相应的标准和数据库,很好地解决了Nb等Al、Ti、W、Mo等元素偏析问题,提高了其热加工性能。然而,对于采用真空感应熔炼、保护气氛电渣重熔和真空自耗重熔三联工艺熔炼的锭型为Φ508mm的高合金化GH4720Li合金来说,低熔点析出相易过烧而形成孔洞,且Al、Ti、W、Mo等元素之间的交互作用导致扩散规律更加复杂。如果均匀化退火制度选择不当容易导致锻件中出现严重的组织问题,如偏析消除不彻底容易在锻件中形成条带组织而导致锻件报废。目前高合金化高温合金往往采用多级均匀化退火工艺,退火工艺复杂且周期长,生产成本高,因此,对于高合金化高温合金,制定合理的均匀化退火制度显得尤为重要。The research on the homogenization annealing process of highly alloyed superalloys such as GH4169 is relatively mature, and corresponding standards and databases have been formed, which has well solved the segregation problem of elements such as Nb, Al, Ti, W, Mo, etc., and improved its thermal stability. Processability. However, for the highly alloyed GH4720Li alloy with an ingot type of Φ508mm melted by vacuum induction melting, protective atmosphere electroslag remelting and vacuum consumable remelting, the low melting point precipitates are easily overburned to form pores, and Al The interaction between elements such as , Ti, W, Mo, etc., makes the diffusion law more complicated. If the homogenization annealing system is improperly selected, it is easy to cause serious structural problems in the forgings, such as the incomplete elimination of segregation, it is easy to form a strip structure in the forgings and lead to the scrapping of the forgings. At present, high-alloying superalloys often use multi-stage homogenization annealing process, which is complex and long-term, and the production cost is high. Therefore, for high-alloying superalloys, it is particularly important to formulate a reasonable homogenization annealing system.

发明内容SUMMARY OF THE INVENTION

本发明所要解决的技术问题在于针对上述现有技术的不足,提供一种高合金化GH4720Li合金单级均匀化退火工艺,该工艺通过控制单级均匀化退火的升温速率、温度和保温时间工艺参数,消除了高合金化GH4720Li合金的(γ+γ′)共晶相和硼化物低熔点析出相,同时促进了枝晶间和枝晶干的Al、Ti、W、Mo元素充分扩散,消除了元素偏析,且退火过程中不会发生过烧现象,解决了高合金化GH4720Li合金均匀化退火过程中易过烧和元素偏析残留问题。The technical problem to be solved by the present invention is to provide a high-alloyed GH4720Li alloy single-stage homogenization annealing process for the deficiencies of the above-mentioned prior art. , eliminating the (γ+γ′) eutectic phase and boride low melting point precipitation phase of the highly alloyed GH4720Li alloy, and at the same time promoting the full diffusion of Al, Ti, W, Mo elements in the interdendritic and dendrite trunks, eliminating the element segregation, and no overburning phenomenon occurs during the annealing process, which solves the problem of easy overburning and element segregation residues during the homogenization annealing process of the highly alloyed GH4720Li alloy.

为解决上述技术问题,本发明采用的技术方案是:一种高合金化GH4720Li合金单级均匀化退火工艺,其特征在于,该工艺包括以下步骤:In order to solve the above-mentioned technical problems, the technical scheme adopted in the present invention is: a single-stage homogenization annealing process of high alloyed GH4720Li alloy, characterized in that the process comprises the following steps:

步骤一、将高合金化GH4720Li合金铸锭试样以10℃/min~20℃/min的升温速率加热至1120℃;所述高合金化GH4720Li合金铸锭采用真空感应熔炼、保护气氛电渣重熔和真空自耗重熔三联工艺熔炼得到,锭型为Φ508mm;Step 1. Heat the high-alloyed GH4720Li alloy ingot sample to 1120°C at a heating rate of 10°C/min to 20°C/min; the high-alloyed GH4720Li alloy ingot is smelted by vacuum induction and electroslag in a protective atmosphere. It is obtained by melting and vacuum consumable remelting triple process, and the ingot shape is Φ508mm;

步骤二、将步骤一中加热至1120℃的高合金化GH4720Li合金铸锭试样以1℃/min~5℃/min的升温速率加热至1180℃~1230℃后保温8h~28h,然后随炉冷却;所述保温的时间随加热温度的升高而减少。Step 2: Heat the high-alloyed GH4720Li alloy ingot sample heated to 1120°C in step 1 to 1180°C to 1230°C at a heating rate of 1°C/min to 5°C/min, and then keep it for 8h to 28h. Cooling; the holding time decreases as the heating temperature increases.

本发明首先将高合金化GH4720Li合金以10℃/min~20℃/min的升温速率加热至1120℃,然后以1℃/min~5℃/min的升温速率加热至1180℃~1230℃后保温8h~28h。高合金化GH4720Li合金低熔点析出相在1120℃开始回溶,在1120℃以下高合金化GH4720Li合金的组织保持稳定,本发明采用10℃/min~20℃/min的快速升温加热至1120℃,提高了生产效率,且在工业生产中易于实现,当高合金化GH4720Li合金的温度高于1120℃,Al、Ti、W、Mo元素开始逐渐扩散,(γ+γ′)共晶相、硼化物低熔点析出相逐渐回溶,本发明采用1℃/min~5℃/min的升温速率确保高合金化GH4720Li合金的(γ+γ′)共晶相、硼化物低熔点析出相缓慢回溶和枝晶间和枝晶干的Al、Ti、Mo、W元素缓慢扩散,并抑制了因升温速率过快导致的低熔点析出相过烧和Al、Ti、W、Mo元素扩散不充分现象,同时节省升温时间,提高生产效率,采用加热至1180℃~1230℃后保温8h~28h,在连续的升温和保温过程中,实现消除高合金化GH4720Li合金的(γ+γ′)共晶相,硼化物低熔点析出相回溶,促使枝晶间和枝晶干的Al、Ti、W、Mo元素充分扩散,消除元素偏析,且不会发生过烧现象,解决高合金化GH4720Li合金均匀化退火过程中易过烧和元素偏析残留问题,达到均匀化退火的目的,该加热保温的温度范围1180℃~1230℃在高合金化GH4720Li合金的γ′溶解温度1160℃以上和初熔温度1250℃以下,满足退火温度的要求,在接近1180℃长时间保温可以消除低熔点析出相,但是效率较低,当高于1230℃容易导致低熔点析出相发生过烧而导致材料报废,该8h~28h的保温时间由加热温度决定,Al、Ti、W、Mo元素的扩散系数随着温度升高呈指数增长,较低保温温度下需要更长的保温时间实现元素的充分扩散,而较高保温温度可以缩短保温时间进而提高生产效率。In the present invention, the high-alloyed GH4720Li alloy is first heated to 1120°C at a heating rate of 10°C/min to 20°C/min, and then heated to 1180°C to 1230°C at a heating rate of 1°C/min to 5°C/min, and then kept at a temperature of 1180°C to 1230°C. 8h~28h. The low melting point precipitation phase of the high-alloyed GH4720Li alloy begins to dissolve back at 1120 °C, and the structure of the high-alloyed GH4720Li alloy remains stable below 1120 °C. The production efficiency is improved, and it is easy to realize in industrial production. When the temperature of the highly alloyed GH4720Li alloy is higher than 1120 °C, the elements of Al, Ti, W, and Mo begin to diffuse gradually, and the (γ+γ′) eutectic phase, boride The low-melting point precipitation phase is gradually redissolved, and the present invention adopts a heating rate of 1°C/min to 5°C/min to ensure that the (γ+γ') eutectic phase and the low-melting point precipitation phase of the high alloyed GH4720Li alloy slowly dissolve back and dendrites. The Al, Ti, Mo, and W elements in the intergranular and dendrites diffuse slowly, and the over-burning of the low-melting point precipitates and the insufficient diffusion of the Al, Ti, W, and Mo elements caused by the excessively fast heating rate are suppressed, and the heating rate is saved at the same time. Time, improve production efficiency, adopt heating to 1180 ℃ ~ 1230 ℃ and then keep for 8h ~ 28h, in the process of continuous heating and heat preservation, to eliminate the (γ+γ') eutectic phase of highly alloyed GH4720Li alloy, low boride The melting point precipitation phase dissolves back, which promotes the full diffusion of Al, Ti, W, and Mo elements between dendrites and dendrite stems, eliminates element segregation, and does not cause over-burning, which solves the problem of easy over-burning during homogenization annealing of highly alloyed GH4720Li alloy. The problem of sintering and element segregation residues is to achieve the purpose of homogenization annealing. The temperature range of this heating and heat preservation is 1180℃~1230℃. The γ′ dissolution temperature of the highly alloyed GH4720Li alloy is above 1160℃ and the initial melting temperature is below 1250℃, which meets the annealing temperature. If the temperature is close to 1180°C for a long time, the low-melting point precipitation phase can be eliminated, but the efficiency is low. When the temperature is higher than 1230°C, it is easy to cause the low-melting point precipitation phase to overburn and cause the material to be scrapped. The holding time of 8h to 28h is determined by heating The temperature is determined. The diffusion coefficients of Al, Ti, W, and Mo elements increase exponentially with the increase of temperature. At lower holding temperatures, longer holding time is required to achieve full diffusion of elements, while higher holding temperatures can shorten holding time and further Increase productivity.

上述的一种高合金化GH4720Li合金单级均匀化退火工艺,步骤二中所述升温速率为3℃/min~5℃/min。本发明采用的升温速率为3℃/min~5℃/min,确保高合金化GH4720Li合金的(γ+γ′)共晶相、硼化物低熔点析出相缓慢回溶和Al、Ti、Mo、W元素缓慢扩散,同时缩短升温时间,提高生产效率,并抑制因升温速率过快导致的低熔点析出相过烧和Al、Ti、W、Mo元素扩散不充分。In the above-mentioned single-stage homogenization annealing process of the highly alloyed GH4720Li alloy, the heating rate in step 2 is 3°C/min to 5°C/min. The heating rate used in the present invention is 3°C/min to 5°C/min to ensure that the (γ+γ') eutectic phase, the low melting point precipitation phase of boride and the Al, Ti, Mo, The W element diffuses slowly, while shortening the heating time, improving the production efficiency, and suppressing the over-sintering of the low-melting-point precipitates and the insufficient diffusion of Al, Ti, W, and Mo caused by the too fast heating rate.

上述的一种高合金化GH4720Li合金单级均匀化退火工艺,步骤二中所述加热至1230℃后保温8h。本发明采用加热至1230℃后保温8h,较高的温度能缩短保温的时间,提高生产效率,同时避免较低温度下长时间保温而发生过烧,实现消除高合金化GH4720Li合金的(γ+γ′)共晶相和硼化物低熔点析出相,促使枝晶间和枝晶干的Al、Ti、W、Mo元素充分扩散,消除元素偏析,且退火过程中不会发生过烧现象,解决高合金化GH4720Li合金均匀化退火过程中易过烧和元素偏析残留问题。In the above-mentioned single-stage homogenization annealing process of a highly alloyed GH4720Li alloy, the temperature is heated to 1230° C. for 8 hours as described in step 2. The present invention adopts heating to 1230 DEG C and then keeping for 8 hours. Higher temperature can shorten the time of keeping warm, improve production efficiency, and at the same time avoid over-burning due to long-term heat preservation at lower temperature, so as to eliminate the (γ+ γ′) eutectic phase and boride low melting point precipitation phase, which promotes the full diffusion of Al, Ti, W, and Mo elements between dendrites and dendrite stems, eliminates element segregation, and does not occur during the annealing process. Alloyed GH4720Li alloy is prone to overburning and element segregation residues during homogenization annealing.

上述的一种高合金化GH4720Li合金单级均匀化退火工艺,所述升温速率为5℃/min。本发明采用的升温速率为5℃/min,节省升温时间,提高生产效率。In the above single-stage homogenization annealing process of a highly alloyed GH4720Li alloy, the heating rate is 5°C/min. The heating rate adopted in the present invention is 5°C/min, which saves heating time and improves production efficiency.

本发明与现有技术相比具有以下优点:Compared with the prior art, the present invention has the following advantages:

1、本发明将采用真空感应熔炼、保护气氛电渣重熔和真空自耗重熔三联熔炼得到的高合金化GH4720Li合金进行单级均匀化退火,消除了高合金化GH4720Li合金的(γ+γ′)共晶相和硼化物低熔点析出相,促进了枝晶间和枝晶干的Al、Ti、W、Mo元素充分扩散,消除元素偏析,且退火过程中不会发生过烧现象,解决了高合金化GH4720Li合金均匀化退火过程中易过烧和元素偏析残留问题,获得成分均匀的高合金化GH4720Li合金。1. The present invention performs single-stage homogenization annealing of the high-alloyed GH4720Li alloy obtained by triple smelting of vacuum induction melting, protective atmosphere electroslag remelting and vacuum consumable remelting, eliminating the (γ+γ) of the high-alloying GH4720Li alloy. ') eutectic phase and boride low melting point precipitation phase, which promotes the full diffusion of Al, Ti, W, and Mo elements between dendrites and dendrite stems, eliminates element segregation, and does not cause overburning during annealing. The highly alloyed GH4720Li alloy is prone to over-sintering and residual element segregation during the homogenization annealing process, and a highly alloyed GH4720Li alloy with uniform composition is obtained.

2、本发明通过控制单级均匀化退火的升温速率、温度和保温时间工艺参数实现了高合金化GH4720Li合金的单级均匀化退火,在1120℃以下采用10℃/min~20℃/min的升温速率快速升温,提高了生产效率,在1120℃以上采用1℃/min~5℃/min的升温速率,避免因升温速率过快容易导致的低熔点相过烧,同时节省升温时间,提高生产效率,采用加热至1230℃保温8h,缩短保温时间,提高生产效率。2. The present invention realizes the single-stage homogenization annealing of the high-alloyed GH4720Li alloy by controlling the heating rate, temperature and holding time process parameters of the single-stage homogenization annealing. The heating rate increases rapidly, which improves the production efficiency. The heating rate of 1°C/min~5°C/min is used above 1120°C to avoid the overburning of the low melting point phase that is easily caused by the too fast heating rate, and at the same time save the heating time and improve the production. Efficiency, heating to 1230 ℃ for 8h, shortening the holding time and improving production efficiency.

3、本发明工艺操作简单,生产效率高,生产成本低,且具有更广泛的适用性。3. The process of the present invention is simple in operation, high in production efficiency, low in production cost, and has wider applicability.

下面通过附图和实施例对本发明的技术方案作进一步的详细描述。The technical solutions of the present invention will be further described in detail below through the accompanying drawings and embodiments.

附图说明Description of drawings

图1a为本发明实施例1采用的高合金化GH4720Li合金的OM图。FIG. 1a is an OM diagram of the highly alloyed GH4720Li alloy used in Example 1 of the present invention.

图1b为本发明实施例1采用的高合金化GH4720Li合金的SEM图。Figure 1b is a SEM image of the highly alloyed GH4720Li alloy used in Example 1 of the present invention.

图2为本发明实施例1经单级均匀化退火后的高合金化GH4720Li合金的SEM图。2 is a SEM image of the highly alloyed GH4720Li alloy after single-stage homogenization annealing in Example 1 of the present invention.

图3为本发明对比例1经单级均匀化退火后的高合金化GH4720Li合金的SEM图。FIG. 3 is a SEM image of the highly alloyed GH4720Li alloy after single-stage homogenization annealing in Comparative Example 1 of the present invention.

图4为本发明对比例2经双级均匀化退火后的高合金化GH4720Li合金的SEM图。FIG. 4 is a SEM image of the highly alloyed GH4720Li alloy after double-stage homogenization annealing in Comparative Example 2 of the present invention.

图5为本发明实施例2经单级均匀化退火后的高合金化GH4720Li合金的SEM图。5 is a SEM image of the highly alloyed GH4720Li alloy after single-stage homogenization annealing in Example 2 of the present invention.

具体实施方式Detailed ways

实施例1Example 1

本实施例包括以下步骤:This embodiment includes the following steps:

步骤一、将采用真空感应熔炼、保护气氛电渣重熔和真空自耗重熔三联工艺熔炼的锭型为Φ508mm的高合金化GH4720Li合金铸锭,由头部切取厚为20mm的铸锭片,然后在铸锭片心部切取10mm×10mm×10mm(长×宽×高)的高合金化GH4720Li合金试样,再将高合金化GH4720Li合金试样置于高温箱式炉内,以10℃/min的升温速率加热至1120℃;Step 1: The high alloyed GH4720Li alloy ingot of Φ508mm is smelted by the triple process of vacuum induction melting, protective atmosphere electroslag remelting and vacuum consumable remelting, and the ingot slice with a thickness of 20mm is cut from the head, Then, a 10mm×10mm×10mm (length×width×height) high-alloyed GH4720Li alloy sample was cut from the core of the ingot, and the high-alloyed GH4720Li alloy sample was placed in a high-temperature box furnace at a temperature of 10℃/ The heating rate of min was heated to 1120 °C;

步骤二、将步骤一中加热至1120℃的高合金化GH4720Li合金试样以5℃/min的升温速率加热至1230℃后保温8h,然后随炉冷却。Step 2: The high-alloyed GH4720Li alloy sample heated to 1120°C in step 1 is heated to 1230°C at a heating rate of 5°C/min, then kept for 8 hours, and then cooled in the furnace.

图1a为本实施例采用的高合金化GH4720Li合金的铸态组织OM图,图1b为本实施例采用的高合金化GH4720Li合金的SEM图,从图1a和图1b可以看出采用真空感应熔炼、保护气氛电渣重熔和真空自耗重熔三联工艺熔炼的锭型为Φ508mm的高合金化GH4720Li合金的铸态组织存在(γ+γ′)共晶相、低熔点析出相缺陷。Figure 1a is an OM image of the as-cast microstructure of the highly alloyed GH4720Li alloy used in this embodiment, and Figure 1b is a SEM image of the highly alloyed GH4720Li alloy used in this embodiment. It can be seen from Figures 1a and 1b that vacuum induction melting is adopted The as-cast structure of the highly alloyed GH4720Li alloy with the ingot type of Φ508mm smelted by the triple process of electroslag remelting and vacuum consumable remelting in protective atmosphere has (γ+γ′) eutectic phase and low melting point precipitation phase defects.

图2为本实施例采用单级均匀化退火后的高合金化GH4720Li合金的SEM图,从图2可以看出,经单级均匀化退火后的高合金化GH4720Li合金存在碳化物残留,碳化物残留周围未发现(γ+γ′)共晶相、低熔点析出相缺陷,且没有明显孔洞存在,无过烧现象发生,说明本实施例采用单级均匀化退火后的高合金化GH4720Li合金的Al、Ti、W、Mo元素偏析得到充分扩散,偏析较彻底消除,获得了良好的单级均匀化退火效果。Fig. 2 is an SEM image of the high-alloyed GH4720Li alloy after single-stage homogenization annealing in this embodiment. It can be seen from Fig. 2 that carbide residues exist in the high-alloyed GH4720Li alloy after single-stage homogenization annealing. No (γ+γ′) eutectic phase and low-melting point precipitation phase defects were found around the residue, and there were no obvious pores and no over-burning phenomenon, indicating that the high-alloyed GH4720Li alloy after single-stage homogenization annealing was used in this example. The segregation of Al, Ti, W, Mo elements is fully diffused, the segregation is completely eliminated, and a good single-stage homogenization annealing effect is obtained.

通过图1a、图1b和图2对比可以看出,本实施例经单级均匀化退火后的高合金化GH4720Li合金的(γ+γ′)共晶相和低熔点析出相被消除,且没有明显孔洞存在,说明高合金化GH4720Li合金经单级均匀化退火后(γ+γ′)共晶相和硼化物低熔点析出相回溶较为彻底,无过烧现象发生,获得了良好的单级均匀化退火效果。By comparing Fig. 1a, Fig. 1b and Fig. 2, it can be seen that the (γ+γ') eutectic phase and low melting point precipitation phase of the highly alloyed GH4720Li alloy after single-stage homogenization annealing in this example are eliminated, and there is no The existence of obvious voids indicates that the (γ+γ′) eutectic phase and the boride low-melting precipitation phase of the high-alloyed GH4720Li alloy after the single-stage homogenization annealing are more thoroughly re-dissolved, no overburning phenomenon occurs, and a good single-stage annealing is obtained. Homogenizing the annealing effect.

对比例1Comparative Example 1

本对比例包括以下步骤:This comparative example includes the following steps:

步骤一、将采用真空感应熔炼、保护气氛电渣重熔和真空自耗重熔三联工艺熔炼的锭型为Φ508mm的高合金化GH4720Li合金铸锭,由头部切取厚为20mm的铸锭片,然后在铸锭片心部切取10mm×10mm×10mm(长×宽×高)的高合金化GH4720Li合金试样,再将高合金化GH4720Li合金试样置于高温箱式炉内,以10℃/min的升温速率加热至1120℃;Step 1: The high alloyed GH4720Li alloy ingot of Φ508mm is smelted by the triple process of vacuum induction melting, protective atmosphere electroslag remelting and vacuum consumable remelting, and the ingot slice with a thickness of 20mm is cut from the head, Then, a 10mm×10mm×10mm (length×width×height) high-alloyed GH4720Li alloy sample was cut from the core of the ingot, and the high-alloyed GH4720Li alloy sample was placed in a high-temperature box furnace at a temperature of 10℃/ The heating rate of min was heated to 1120 °C;

步骤二、将步骤一中加热至1120℃的高合金化GH4720Li合金试样以10℃/min的升温速率加热至1230℃后保温8h,然后随炉冷却。Step 2: The high-alloyed GH4720Li alloy sample heated to 1120°C in step 1 is heated to 1230°C at a heating rate of 10°C/min, then kept for 8 hours, and then cooled in the furnace.

图3为本对比例采用单级均匀化退火后的高合金化GH4720Li合金的SEM图,从图3可以看出经单级均匀化退火后的高合金化GH4720Li合金存在明显的碳化物残留,碳化物残留周围出现因低熔点相过烧而形成的孔洞。Figure 3 is the SEM image of the high-alloyed GH4720Li alloy after single-stage homogenization annealing in the comparative example. It can be seen from Figure 3 that the high-alloyed GH4720Li alloy after single-stage homogenization annealing has obvious carbide residues. Pores formed by overburning of the low melting point phase appear around the residue.

通过图2和图3对比可以看出,本对比例单级均匀化退火后的高合金化GH4720Li合金明显出现因过烧而形成的孔洞,说明本对比例使用的升温速率过快,导致高合金化GH4720Li合金的低熔点析出相发生过烧而产生孔洞,导致高合金化GH4720Li合金报废。It can be seen from the comparison between Fig. 2 and Fig. 3 that the highly alloyed GH4720Li alloy after single-stage homogenization annealing in this comparative example has obvious pores formed by over-burning, which indicates that the heating rate used in this comparative example is too fast, resulting in high alloying. The low melting point precipitation phase of the alloyed GH4720Li alloy is over-burned to produce pores, which leads to the scrapping of the high-alloyed GH4720Li alloy.

对比例2Comparative Example 2

本对比例包括以下步骤:This comparative example includes the following steps:

步骤一、将采用真空感应熔炼、保护气氛电渣重熔和真空自耗重熔三联工艺熔炼的锭型为Φ508mm的高合金化GH4720Li合金铸锭,由头部切取厚为20mm的铸锭片,然后在铸锭片心部切取10mm×10mm×10mm(长×宽×高)的高合金化GH4720Li合金试样,再将高合金化GH4720Li合金试样置于高温箱式炉内,以10℃/min的升温速率加热至1120℃;Step 1: The high alloyed GH4720Li alloy ingot of Φ508mm is smelted by the triple process of vacuum induction melting, protective atmosphere electroslag remelting and vacuum consumable remelting, and the ingot slice with a thickness of 20mm is cut from the head, Then, a 10mm×10mm×10mm (length×width×height) high-alloyed GH4720Li alloy sample was cut from the core of the ingot, and the high-alloyed GH4720Li alloy sample was placed in a high-temperature box furnace at a temperature of 10℃/ The heating rate of min was heated to 1120 °C;

步骤二、将步骤一中加热至1120℃的高合金化GH4720Li合金试样以10℃/min的升温速率加热至1180℃保温24h,然后以10℃/min升温速率加热至1230℃保温28h,然后随炉冷却。Step 2: Heat the high-alloyed GH4720Li alloy sample heated to 1120°C in step 1 to 1180°C for 24h at a heating rate of 10°C/min, then heat to 1230°C for 28h at a heating rate of 10°C/min, and then Cool in the oven.

图4为本对比例采用双级均匀化退火后的高合金化GH4720Li合金的SEM图,从图4可以看出,本对比例采用现有技术中的双级均匀化退火得到的高合金化GH4720Li合金中存在碳化物残留,碳化物残留周围出现因低熔点析出相过烧而形成的孔洞。Fig. 4 is the SEM image of the high-alloyed GH4720Li alloy obtained by the double-stage homogenization annealing in the comparative example. It can be seen from Fig. 4 that the high-alloyed GH4720Li obtained by the double-stage homogenization annealing in the prior art is used in the comparative example. There are carbide residues in the alloy, and holes formed by the overburning of the low-melting-point precipitates appear around the carbide residues.

通过图2和图4对比可以看出,本对比例采用现有技术中的双级均匀化退火得到的高合金化GH4720Li合金明显出现因过烧而形成的孔洞,说明对于高合金化GH4720Li合金来说采用双级均匀化退火仍然存在低熔点析出相过烧而产生孔洞,导致高合金化GH4720Li合金报废。It can be seen from the comparison between Fig. 2 and Fig. 4 that the high-alloyed GH4720Li alloy obtained by the double-stage homogenization annealing in the prior art obviously has pores formed by over-burning, indicating that the high-alloyed GH4720Li alloy has It is said that the double-stage homogenization annealing still has low melting point precipitation phase overburning and produces pores, which leads to the scrapping of the highly alloyed GH4720Li alloy.

实施例2Example 2

本实施例包括以下步骤:This embodiment includes the following steps:

步骤一、将采用真空感应熔炼、保护气氛电渣重熔和真空自耗重熔三联工艺熔炼的锭型为Φ508mm的高合金化GH4720Li合金铸锭,由头部切取厚为20mm的铸锭片,然后在铸锭片心部切取10mm×10mm×10mm(长×宽×高)的高合金化GH4720Li合金试样,再将高合金化GH4720Li合金试样置于高温箱式炉内,以15℃/min的升温速率加热至1120℃;Step 1: The high alloyed GH4720Li alloy ingot of Φ508mm is smelted by the triple process of vacuum induction melting, protective atmosphere electroslag remelting and vacuum consumable remelting, and the ingot slice with a thickness of 20mm is cut from the head, Then, a 10mm×10mm×10mm (length×width×height) high-alloyed GH4720Li alloy sample was cut from the core of the ingot, and the high-alloyed GH4720Li alloy sample was placed in a high-temperature box furnace at 15°C/ The heating rate of min was heated to 1120 °C;

步骤二、将步骤一中加热至1120℃的高合金化GH4720Li合金试样以1℃/min升温速率加热至1180℃保温28h,然后随炉冷却。Step 2: The high-alloyed GH4720Li alloy sample heated to 1120°C in step 1 was heated to 1180°C at a heating rate of 1°C/min for 28 hours, and then cooled in the furnace.

图5为本实施例采用单级均匀化退火后的高合金化GH4720Li合金的SEM图,从图5可以看出,经单级均匀化退火后的高合金化GH4720Li合金中存在碳化物残留,碳化物残留周围未发现(γ+γ′)共晶相、低熔点析出相缺陷,且没有明显孔洞存在,无过烧现象发生,说明本实施例采用单级均匀化退火后的高合金化GH4720Li合金的Al、Ti、W、Mo元素偏析得到充分扩散,偏析较彻底消除,获得了良好的单级均匀化退火效果。FIG. 5 is a SEM image of the high-alloyed GH4720Li alloy after single-stage homogenization annealing in this embodiment. It can be seen from FIG. 5 that there are carbide residues in the high-alloyed GH4720Li alloy after single-stage homogenization annealing. No (γ+γ′) eutectic phase and low melting point precipitation phase defects were found around the residue, and there were no obvious pores and no overburning phenomenon, indicating that the high-alloyed GH4720Li alloy after single-stage homogenization annealing was adopted in this example. The segregation of Al, Ti, W, Mo elements is fully diffused, the segregation is completely eliminated, and a good single-stage homogenization annealing effect is obtained.

实施例3Example 3

本实施例包括以下步骤:This embodiment includes the following steps:

步骤一、将采用真空感应熔炼、保护气氛电渣重熔和真空自耗重熔三联工艺熔炼的锭型为Φ508mm的高合金化GH4720Li合金铸锭,由头部切取厚为20mm的铸锭片,然后在铸锭片心部切取10mm×10mm×10mm(长×宽×高)的高合金化GH4720Li合金试样,再将高合金化GH4720Li合金试样置于高温箱式炉内,以20℃/min的升温速率加热至1120℃;Step 1: The high alloyed GH4720Li alloy ingot of Φ508mm is smelted by the triple process of vacuum induction melting, protective atmosphere electroslag remelting and vacuum consumable remelting, and the ingot slice with a thickness of 20mm is cut from the head, Then, a 10mm×10mm×10mm (length×width×height) high-alloyed GH4720Li alloy sample was cut from the core of the ingot, and the high-alloyed GH4720Li alloy sample was placed in a high-temperature box furnace at 20℃/ The heating rate of min was heated to 1120 °C;

步骤二、将步骤一中加热至1120℃的高合金化GH4720Li合金试样以3℃/min升温速率加热至1200℃保温16h,然后随炉冷却。Step 2: The high-alloyed GH4720Li alloy sample heated to 1120°C in step 1 was heated to 1200°C at a heating rate of 3°C/min for 16 hours, and then cooled with the furnace.

经检测发现,本实施例经单级均匀化退火后的高合金化GH4720Li合金的(γ+γ′)共晶相和硼化物低熔点析出相彻底回溶,且没有明显孔洞存在,无过烧现象发生,Al、Ti、W、Mo元素偏析得到充分扩散,偏析较彻底消除,获得了良好的均匀化退火效果。After testing, it was found that the (γ+γ′) eutectic phase and the boride low melting point precipitation phase of the highly alloyed GH4720Li alloy after single-stage homogenization annealing in this example were completely re-dissolved, and there were no obvious holes and no overburning. The phenomenon occurs, the segregation of Al, Ti, W, Mo elements is fully diffused, the segregation is completely eliminated, and a good homogenization annealing effect is obtained.

实施例4Example 4

本实施例包括以下步骤:This embodiment includes the following steps:

步骤一、将采用真空感应熔炼、保护气氛电渣重熔和真空自耗重熔三联工艺熔炼的锭型为Φ508mm的高合金化GH4720Li合金铸锭,由头部切取厚为20mm的铸锭片,然后在铸锭片心部切取10mm×10mm×10mm(长×宽×高)的高合金化GH4720Li合金试样,再将高合金化GH4720Li合金试样置于高温箱式炉内,以10℃/min的升温速率加热至1120℃;Step 1: The high alloyed GH4720Li alloy ingot of Φ508mm is smelted by the triple process of vacuum induction melting, protective atmosphere electroslag remelting and vacuum consumable remelting, and the ingot slice with a thickness of 20mm is cut from the head, Then, a 10mm×10mm×10mm (length×width×height) high-alloyed GH4720Li alloy sample was cut from the core of the ingot, and the high-alloyed GH4720Li alloy sample was placed in a high-temperature box furnace at a temperature of 10℃/ The heating rate of min was heated to 1120 °C;

步骤二、将步骤一中加热至1120℃的高合金化GH4720Li合金试样以4℃/min升温速率加热至1230℃保温8h,然后随炉冷却。Step 2: The high-alloyed GH4720Li alloy sample heated to 1120°C in step 1 was heated to 1230°C at a heating rate of 4°C/min for 8 hours, and then cooled in the furnace.

经检测发现,本实施例经单级均匀化退火后的高合金化GH4720Li合金的(γ+γ′)共晶相和硼化物低熔点析出相彻底回溶,且没有明显孔洞存在,无过烧现象发生,Al、Ti、W、Mo元素偏析得到充分扩散,偏析较彻底消除,获得了良好的均匀化退火效果。After testing, it was found that the (γ+γ′) eutectic phase and the boride low melting point precipitation phase of the highly alloyed GH4720Li alloy after single-stage homogenization annealing in this example were completely re-dissolved, and there were no obvious holes and no overburning. The phenomenon occurs, the segregation of Al, Ti, W, Mo elements is fully diffused, the segregation is completely eliminated, and a good homogenization annealing effect is obtained.

以上所述,仅是本发明的较佳实施例,并非对本发明作任何限制。凡是根据发明技术实质对以上实施例所作的任何简单修改、变更以及等效变化,均仍属于本发明技术方案的保护范围内。The above descriptions are only preferred embodiments of the present invention, and do not limit the present invention in any way. Any simple modifications, changes and equivalent changes made to the above embodiments according to the technical essence of the invention still fall within the protection scope of the technical solutions of the present invention.

Claims (4)

1. A high-alloying GH4720Li alloy single-stage homogenization annealing process is characterized by comprising the following steps:
step one, heating a high-alloying GH4720Li alloy ingot casting sample to 1120 ℃ at a heating rate of 10-20 ℃/min; the high-alloying GH4720Li alloy cast ingot is obtained by smelting through a triple process of vacuum induction smelting, protective atmosphere electroslag remelting and vacuum consumable remelting, and the ingot shape is phi 508 mm;
step two, heating the high-alloying GH4720Li alloy ingot casting sample heated to 1120 ℃ in the step one to 1180-1230 ℃ at a heating rate of 1-5 ℃/min, preserving heat for 8-28 h, and then cooling along with the furnace; the time of the heat preservation is reduced along with the increase of the heating temperature.
2. The process according to claim 1, wherein the temperature increase rate in the second step is 3 ℃/min to 5 ℃/min.
3. The process according to claim 2, wherein in step two, the temperature is maintained for 8h after heating to 1230 ℃.
4. The process of claim 2, wherein the temperature increase rate in step two is 5 ℃/min.
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