[go: up one dir, main page]

CN110429072A - A flip chip radio frequency chip and a radio frequency device - Google Patents

A flip chip radio frequency chip and a radio frequency device Download PDF

Info

Publication number
CN110429072A
CN110429072A CN201910754759.1A CN201910754759A CN110429072A CN 110429072 A CN110429072 A CN 110429072A CN 201910754759 A CN201910754759 A CN 201910754759A CN 110429072 A CN110429072 A CN 110429072A
Authority
CN
China
Prior art keywords
radio frequency
chip
substrate
flip
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910754759.1A
Other languages
Chinese (zh)
Inventor
钟立平
蓝焕青
林宇星
张志浩
章国豪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guangdong University of Technology
Original Assignee
Guangdong University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guangdong University of Technology filed Critical Guangdong University of Technology
Priority to CN201910754759.1A priority Critical patent/CN110429072A/en
Publication of CN110429072A publication Critical patent/CN110429072A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3677Wire-like or pin-like cooling fins or heat sinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/645Inductive arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/66High-frequency adaptations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64Impedance arrangements
    • H01L2223/66High-frequency adaptations
    • H01L2223/6605High-frequency electrical connections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)

Abstract

本发明公开了一种倒装射频芯片,包括射频裸片和基板;射频裸片位于基板表面,射频裸片朝向基板一侧表面设置有第一信号引脚,第一信号引脚通过第一导电柱固定于基板朝向射频裸片一侧表面;基板的导电线路层中设置有用于提供预设匹配电感的导电线。上述射频裸片具体以倒装的方式安装在基板表面,在信息传递过程中所产生的热量主要集中于第一导电柱中。由于第一导电柱具有一定的直径,散热性较高,且可靠性较高不易损坏,从而使得倒装射频芯片具有较高的散热性和可靠性。本发明还提供了一种射频器件,同样具有上述有益效果。

The invention discloses a flip-chip radio frequency chip, comprising a radio frequency bare chip and a substrate; the radio frequency bare chip is located on the surface of the substrate, and a surface of the radio frequency bare chip facing the substrate is provided with first signal pins, and the first signal pins pass through the first conductive The post is fixed on the side surface of the substrate facing the radio frequency bare chip; the conductive line layer of the substrate is provided with a conductive line for providing a preset matching inductance. The above RF bare chip is specifically mounted on the surface of the substrate in a flip-chip manner, and the heat generated during the information transfer process is mainly concentrated in the first conductive column. Because the first conductive column has a certain diameter, the heat dissipation is high, and the reliability is high and not easily damaged, so that the flip-chip radio frequency chip has high heat dissipation and reliability. The present invention also provides a radio frequency device, which also has the above beneficial effects.

Description

一种倒装射频芯片及一种射频器件A flip chip radio frequency chip and a radio frequency device

技术领域technical field

本发明涉及通信技术领域,特别是涉及一种倒装射频芯片及一种射频器件。The present invention relates to the technical field of communications, in particular to a flip-chip radio frequency chip and a radio frequency device.

背景技术Background technique

第五代(5G)移动通信标准正有序的向前推进,下一代移动终端如智能手机、平板电脑和可穿戴设备等必将需要支持更多的工作模式和频段。另外,为了支持如此众多的无线通信协议,多重天线设计越来越广泛地被采纳用于实现多输入多输出(MIMO)的操作,进而获得高的数据率、提高敏感性和避免串扰。The fifth generation (5G) mobile communication standard is advancing in an orderly manner, and the next generation of mobile terminals such as smart phones, tablet computers and wearable devices will definitely need to support more working modes and frequency bands. In addition, to support such a wide variety of wireless communication protocols, multiple antenna designs are increasingly being adopted to achieve multiple-input multiple-output (MIMO) operation for high data rates, increased sensitivity, and avoidance of crosstalk.

但是在现有技术中,尤其是应用于前端的射频芯片,例如射频开关等散热性较差,可靠性较低。所以如何提高射频芯片的散热性以及可靠性是本领域技术人员急需解决的问题。However, in the prior art, especially radio frequency chips applied to the front end, such as radio frequency switches, have poor heat dissipation and low reliability. Therefore, how to improve the heat dissipation and reliability of the radio frequency chip is an urgent problem to be solved by those skilled in the art.

发明内容SUMMARY OF THE INVENTION

本发明的目的是提供一种倒装射频芯片,具有较高的散热性和可靠性;本发明的另一目的在于提供一种射频器件,具有较高的散热性和可靠性。The object of the present invention is to provide a flip-chip radio frequency chip with high heat dissipation and reliability; another object of the present invention is to provide a radio frequency device with high heat dissipation and reliability.

为解决上述技术问题,本发明提供一种倒装射频芯片,包括射频裸片和基板;In order to solve the above technical problems, the present invention provides a flip-chip radio frequency chip, including a radio frequency bare chip and a substrate;

所述射频裸片位于所述基板表面,所述射频裸片朝向所述基板一侧表面设置有第一信号引脚,所述第一信号引脚通过第一导电柱固定于所述基板朝向所述射频裸片一侧表面;所述基板的导电线路层中设置有用于提供预设匹配电感的导电线。The radio frequency die is located on the surface of the substrate, and a surface of the radio frequency die facing the substrate is provided with a first signal pin, and the first signal pin is fixed to the substrate through a first conductive column and faces the substrate. A surface of one side of the radio frequency bare chip; a conductive line for providing a preset matching inductance is arranged in the conductive circuit layer of the substrate.

可选的,所述第一导电柱为铜柱。Optionally, the first conductive column is a copper column.

可选的,所述铜柱横截面的直径不大于1mm。Optionally, the diameter of the cross section of the copper column is not greater than 1 mm.

可选的,所述基板背向所述射频裸片一侧表面具有第二信号引脚,所述第二信号引脚表面设置有第二导电柱。Optionally, a side surface of the substrate facing away from the RF die has second signal pins, and a surface of the second signal pins is provided with second conductive pillars.

可选的,所述第二信号引脚为锡柱。Optionally, the second signal pin is a tin column.

可选的,所述基板中的金属层均设置有用于传输所述射频裸片中信号的导电线。Optionally, the metal layers in the substrate are all provided with conductive lines for transmitting signals in the radio frequency die.

本发明还提供了一种射频器件,包括电路板和如上述任一所述的倒装射频芯片;所述倒装射频芯片与所述电路板通讯连接。The present invention also provides a radio frequency device, comprising a circuit board and the flip-chip radio frequency chip according to any one of the above; the flip-chip radio frequency chip is communicatively connected to the circuit board.

本发明所提供的一种倒装射频芯片,包括射频裸片和基板;射频裸片位于基板表面,射频裸片朝向基板一侧表面设置有第一信号引脚,第一信号引脚通过第一导电柱固定于基板朝向射频裸片一侧表面;基板的导电线路层中设置有用于提供预设匹配电感的导电线。上述射频裸片具体以倒装的方式安装在基板表面,该射频裸片具体通过第一导电柱与基板进行通讯,相应的在信息传递过程中所产生的热量主要集中于第一导电柱中。由于第一导电柱具有一定的直径,散热性较高,且可靠性较高不易损坏,从而使得倒装射频芯片具有较高的散热性和可靠性;同时将射频裸片倒装于基板表面,可以有效减少射频芯片的体积,从而有利于射频芯片集成度的提高;由于取消掉现有技术中的键合丝,在本申请中会在基板的导电线路层中设置用于提供预设匹配电感的导电线,以匹配射频裸片带来的寄生电容。A flip-chip radio frequency chip provided by the present invention includes a radio frequency bare chip and a substrate; the radio frequency bare chip is located on the surface of the substrate, and the surface of the side surface of the radio frequency bare chip facing the substrate is provided with a first signal pin, and the first signal pin passes through the first signal pin. The conductive column is fixed on the surface of the substrate on the side facing the radio frequency bare chip; the conductive line layer of the substrate is provided with a conductive line for providing a preset matching inductance. The above-mentioned RF die is mounted on the surface of the substrate in a flip-chip manner. The RF die communicates with the substrate through the first conductive column, and the corresponding heat generated during the information transfer process is mainly concentrated in the first conductive column. Because the first conductive column has a certain diameter, the heat dissipation is high, and the reliability is high and not easy to be damaged, so that the flip-chip RF chip has high heat dissipation and reliability; The volume of the radio frequency chip can be effectively reduced, which is conducive to the improvement of the integration degree of the radio frequency chip; since the bonding wire in the prior art is eliminated, in this application, a conductive circuit layer of the substrate is provided to provide a preset matching inductance conductive traces to match the parasitic capacitance introduced by the RF die.

本发明还提供了一种射频器件,同样具有上述有益效果,在此不再进行赘述。The present invention also provides a radio frequency device, which also has the above beneficial effects, and will not be repeated here.

附图说明Description of drawings

为了更清楚的说明本发明实施例或现有技术的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单的介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the following will briefly introduce the accompanying drawings used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only For some embodiments of the present invention, for those of ordinary skill in the art, other drawings can also be obtained according to these drawings without creative efforts.

图1为现有技术中射频芯片的结构示意图;1 is a schematic structural diagram of a radio frequency chip in the prior art;

图2为图1的俯视结构示意图;Fig. 2 is the top view structure schematic diagram of Fig. 1;

图3为本发明实施例所提供的一种倒装射频芯片的结构示意图;3 is a schematic structural diagram of a flip-chip radio frequency chip according to an embodiment of the present invention;

图4为图3的侧视结构示意图;Fig. 4 is the side view structure schematic diagram of Fig. 3;

图5为图3的俯视结构示意图;Fig. 5 is the top view structure schematic diagram of Fig. 3;

图6为本发明实施例所提供的一种具体的倒装射频芯片的结构示意图;6 is a schematic structural diagram of a specific flip-chip radio frequency chip provided by an embodiment of the present invention;

图7为图6的侧视结构示意图。FIG. 7 is a schematic side view of the structure of FIG. 6 .

图中:1.射频裸片、2.基板、21.导电线路层、3.第一导电柱、4.第二导电柱。In the figure: 1. RF bare chip, 2. Substrate, 21. Conductive circuit layer, 3. First conductive column, 4. Second conductive column.

具体实施方式Detailed ways

本发明的核心是提供一种倒装射频芯片。请参考图1以及图2,图1为现有技术中射频芯片的结构示意图;图2为图1的俯视结构示意图。参见图1以及图2,在现有技术中,射频裸片通常是正装于基板表面,射频裸片通过键合丝与基板连接,射频裸片所产生的电信号会经过键合丝传递至基板。此时,在信息传递过程中所产生的热量主要集中于键合丝中。由于键合丝非常细,使得射频芯片的散热性较差;同时由于键合丝裸露在基板上方,使得射频芯片的可靠性较低。The core of the present invention is to provide a flip chip radio frequency chip. Please refer to FIG. 1 and FIG. 2 , FIG. 1 is a schematic structural diagram of a radio frequency chip in the prior art; FIG. 2 is a top-view structural schematic diagram of FIG. 1 . Referring to FIG. 1 and FIG. 2 , in the prior art, the RF die is usually mounted on the surface of the substrate, the RF die is connected to the substrate through a bonding wire, and the electrical signal generated by the RF die will be transmitted to the substrate through the bonding wire . At this time, the heat generated in the information transfer process is mainly concentrated in the bonding wire. Because the bonding wire is very thin, the heat dissipation of the radio frequency chip is poor; at the same time, because the bonding wire is exposed above the substrate, the reliability of the radio frequency chip is low.

而本发明所提供的一种倒装射频芯片,包括射频裸片和基板;射频裸片位于基板表面,射频裸片朝向基板一侧表面设置有第一信号引脚,第一信号引脚通过第一导电柱固定于基板朝向射频裸片一侧表面;基板的导电线路层中设置有用于提供预设匹配电感的导电线。上述射频裸片具体以倒装的方式安装在基板表面,该射频裸片具体通过第一导电柱与基板进行通讯,相应的在信息传递过程中所产生的热量主要集中于第一导电柱中。由于第一导电柱具有一定的直径,散热性较高,且可靠性较高不易损坏,从而使得倒装射频芯片具有较高的散热性和可靠性;同时将射频裸片倒装于基板表面,可以有效减少射频芯片的体积,从而有利于射频芯片集成度的提高;由于取消掉现有技术中的键合丝,在本申请中会在基板的导电线路层中设置用于提供预设匹配电感的导电线,以匹配射频裸片带来的寄生电容。The flip-chip radio frequency chip provided by the present invention includes a radio frequency die and a substrate; the radio frequency die is located on the surface of the substrate, and the surface of the radio frequency die facing the substrate is provided with a first signal pin, and the first signal pin passes through the first signal pin. A conductive column is fixed on the surface of the substrate facing the side of the radio frequency bare chip; the conductive line layer of the substrate is provided with a conductive line for providing a preset matching inductance. The above-mentioned RF die is mounted on the surface of the substrate in a flip-chip manner. The RF die communicates with the substrate through the first conductive column, and the corresponding heat generated during the information transfer process is mainly concentrated in the first conductive column. Because the first conductive column has a certain diameter, the heat dissipation is high, and the reliability is high and not easy to be damaged, so that the flip-chip RF chip has high heat dissipation and reliability; The volume of the radio frequency chip can be effectively reduced, which is conducive to the improvement of the integration degree of the radio frequency chip; since the bonding wire in the prior art is eliminated, in this application, a conductive circuit layer of the substrate is provided to provide a preset matching inductance conductive traces to match the parasitic capacitance introduced by the RF die.

为了使本技术领域的人员更好地理解本发明方案,下面结合附图和具体实施方式对本发明作进一步的详细说明。显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。In order to make those skilled in the art better understand the solution of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. Obviously, the described embodiments are only some, but not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

请参考图3,图4以及图5,图3为本发明实施例所提供的一种倒装射频芯片的结构示意图;图4为图3的侧视结构示意图;图5为图3的俯视结构示意图。Please refer to FIG. 3 , FIG. 4 and FIG. 5 . FIG. 3 is a schematic structural diagram of a flip-chip RF chip according to an embodiment of the present invention; FIG. 4 is a side view structural schematic diagram of FIG. 3 ; FIG. 5 is a top-view structure of FIG. 3 Schematic.

参见图3,图4以及图5,在本发明实施例中,倒装射频芯片包括射频裸片1和基板2;所述射频裸片1位于所述基板2表面,所述射频裸片1朝向所述基板2一侧表面设置有第一信号引脚,所述第一信号引脚通过第一导电柱3固定于所述基板2朝向所述射频裸片1一侧表面;所述基板2的导电线路层21中设置有用于提供预设匹配电感的导电线。Referring to FIG. 3 , FIG. 4 and FIG. 5 , in an embodiment of the present invention, a flip-chip radio frequency chip includes a radio frequency die 1 and a substrate 2 ; the radio frequency die 1 is located on the surface of the substrate 2 , and the radio frequency die 1 faces One side surface of the substrate 2 is provided with first signal pins, and the first signal pins are fixed to the side surface of the substrate 2 facing the RF die 1 through the first conductive posts 3; Conductive lines for providing preset matching inductance are provided in the conductive line layer 21 .

上述射频裸片1即Die,在本发明实施例中即用于主要实现射频芯片功能的部件。有关射频裸片1的具体结构可以参考现有技术,在此不再进行赘述。在本发明实施例中,射频裸片1具体封装于基板2表面,即射频裸片1位于基板2表面,与基板2固定连接。具体的,该射频裸片1朝向基板2一侧表面设置有第一信号引脚,该第一信号引脚通过第一导电柱3固定于基板2朝向射频裸片1一侧表面,即上述射频裸片1倒装于基板2表面。需要说明的是,上述第一信号引脚通常不具有伸出的管脚,即上述第一信号引脚通常呈片状,位于射频裸片1朝向基板2一侧表面。此时,射频裸片1与基板2之间进行通讯所产生的电信号会经由第一导电柱3传递,而铜柱即射频芯片工作时的主要热集中处之一。The above-mentioned radio frequency bare chip 1 , namely Die, is a component mainly used for realizing the function of a radio frequency chip in the embodiment of the present invention. For the specific structure of the radio frequency die 1 , reference may be made to the prior art, which will not be repeated here. In the embodiment of the present invention, the radio frequency die 1 is specifically packaged on the surface of the substrate 2 , that is, the radio frequency die 1 is located on the surface of the substrate 2 and is fixedly connected to the substrate 2 . Specifically, the surface of the radio frequency die 1 facing the substrate 2 is provided with first signal pins, and the first signal pins are fixed on the surface of the substrate 2 facing the radio frequency die 1 through the first conductive posts 3 , that is, the above-mentioned radio frequency The bare chip 1 is flip-chipped on the surface of the substrate 2 . It should be noted that the above-mentioned first signal pins generally do not have protruding pins, that is, the above-mentioned first signal pins are generally in a sheet shape and are located on the side surface of the RF die 1 facing the substrate 2 . At this time, the electrical signal generated by the communication between the RF die 1 and the substrate 2 is transmitted through the first conductive column 3 , and the copper column is one of the main heat concentrations of the RF chip during operation.

在本发明实施例中,上述第一导电柱3通常为铜柱,铜柱具有良好的导电性,导热性,以及较低的价格,可以使得本发明实施例所提供的射频芯片具有足够散热性能的同时,有效控制射频芯片的制作成本。通常情况下,上述铜柱横截面的直径不大于1mm,即上述铜柱横截面的直径通常在微米级别。上述铜柱通常是通过生长工艺生长在射频裸片1于基板2之间,起到固定、支撑、以及传递信息的作用。In the embodiment of the present invention, the first conductive column 3 is usually a copper column, and the copper column has good electrical conductivity, thermal conductivity, and low price, which can make the radio frequency chip provided by the embodiment of the present invention have sufficient heat dissipation performance At the same time, the production cost of the RF chip is effectively controlled. Usually, the diameter of the cross-section of the copper pillar is not greater than 1 mm, that is, the diameter of the cross-section of the copper pillar is usually in the order of microns. The above-mentioned copper pillars are usually grown between the RF die 1 and the substrate 2 through a growth process, and play the roles of fixing, supporting, and transmitting information.

在本发明实施例中,基板2的导电线路层21中设置有用于提供预设匹配电感的导电线。上述基板2中设置有导电线路层21,顾名思义,上述导电线路层21中设置有导电线,该导电线通常用于传递基板2内的电信号,即射频裸片1所产生的电信号。由于射频裸片1结构的原因,具体由于射频裸片1内金属连接线的寄生耦合作用,会引入不利于射频芯片性能的电容效应,即引入寄生电容。In the embodiment of the present invention, the conductive line layer 21 of the substrate 2 is provided with a conductive line for providing a preset matching inductance. The above-mentioned substrate 2 is provided with a conductive circuit layer 21 . As the name implies, the above-mentioned conductive circuit layer 21 is provided with conductive lines. The conductive lines are generally used to transmit electrical signals in the substrate 2 , ie, electrical signals generated by the RF die 1 . Due to the structure of the radio frequency die 1 , specifically due to the parasitic coupling effect of the metal connecting lines in the radio frequency die 1 , a capacitive effect that is not conducive to the performance of the radio frequency chip, that is, parasitic capacitance is introduced.

在本发明实施例中,为了更好的完成端口匹配,实现良好的插入损耗和隔离度性能,需要在射频芯片中设置与上述寄生电容相匹配的电感,即预设匹配电感。预设匹配电感的电感值需要与射频裸片1引入的寄生电容的电容值形成良好的匹配,上述预设匹配电感的具体电感值需要根据实际情况自行设置,在此不做具体限定。在本发明实施例中,具体通过在基板2中导电线路层21设置与预设匹配电感相对应的导电线,以实现预设匹配电感的设置,即上述导电线可以用做预设匹配电感,从而使得射频芯片中具有与寄生电容值相对应的匹配电感值。In the embodiment of the present invention, in order to better complete port matching and achieve good insertion loss and isolation performance, it is necessary to set an inductance matching the above-mentioned parasitic capacitance in the radio frequency chip, that is, a preset matching inductance. The inductance value of the preset matching inductance needs to form a good match with the capacitance value of the parasitic capacitance introduced by the RF bare chip 1 . The specific inductance value of the preset matching inductance needs to be set according to the actual situation, which is not specifically limited here. In the embodiment of the present invention, the conductive line layer 21 in the substrate 2 is specifically provided with a conductive line corresponding to the preset matching inductance, so as to realize the setting of the preset matching inductance, that is, the above-mentioned conductive line can be used as the preset matching inductance, Therefore, the radio frequency chip has a matching inductance value corresponding to the parasitic capacitance value.

需要说明的是,在现有技术中,传统的键合丝,一般其1mm等效长度约等于1nH的电感值,而射频裸片1与基板2之间一般存在一定等效长度的键合丝,该键合丝的等效长度即基板2相对于射频裸片1所需要至少增加的长度。而在本发明实施例中,由于射频裸片1具体倒装于基板2表面,不设置有键合丝,使得本发明实施例所提供的倒装射频芯片中基板2的长度可以与射频裸片1的长度大体相等,从而减少射频芯片的长度,进而减少射频裸片1的面积。It should be noted that, in the prior art, a traditional bonding wire generally has an equivalent length of 1 mm equal to an inductance value of 1 nH, while a bonding wire of a certain equivalent length generally exists between the RF die 1 and the substrate 2 , the equivalent length of the bonding wire is at least the length that the substrate 2 needs to increase relative to the RF bare chip 1 . In the embodiment of the present invention, since the radio frequency die 1 is flip-chipped on the surface of the substrate 2, no bonding wire is provided, so that the length of the substrate 2 in the flip-chip radio frequency chip provided by the embodiment of the present invention can be the same as that of the radio frequency die. The lengths of 1 are approximately equal, thereby reducing the length of the radio frequency chip, thereby reducing the area of the radio frequency die 1 .

本发明实施例所提供的一种倒装射频芯片,包括射频裸片1和基板2;射频裸片1位于基板2表面,射频裸片1朝向基板2一侧表面设置有第一信号引脚,第一信号引脚通过第一导电柱3固定于基板2朝向射频裸片1一侧表面;基板2的导电线路层21中设置有用于提供预设匹配电感的导电线。上述射频裸片1具体以倒装的方式安装在基板2表面,该射频裸片1具体通过第一导电柱3与基板2进行通讯,相应的在信息传递过程中所产生的热量主要集中于第一导电柱3中。由于第一导电柱3具有一定的直径,散热性较高,且可靠性较高不易损坏,从而使得倒装射频芯片具有较高的散热性和可靠性;同时将射频裸片1倒装于基板2表面,可以有效减少射频芯片的体积,从而有利于射频芯片集成度的提高;由于取消掉现有技术中的键合丝,在本申请中会在基板2的导电线路层21中设置用于提供预设匹配电感的导电线,以匹配射频裸片1带来的寄生电容。A flip-chip radio frequency chip provided by an embodiment of the present invention includes a radio frequency die 1 and a substrate 2; the radio frequency die 1 is located on the surface of the substrate 2, and the radio frequency die 1 is provided with a first signal pin on the side of the surface facing the substrate 2, The first signal pin is fixed to the surface of the substrate 2 on the side facing the RF die 1 through the first conductive column 3 ; the conductive line layer 21 of the substrate 2 is provided with a conductive line for providing a preset matching inductance. The above RF bare chip 1 is specifically mounted on the surface of the substrate 2 in a flip-chip manner. The RF bare chip 1 communicates with the substrate 2 through the first conductive column 3, and the corresponding heat generated during the information transfer process is mainly concentrated in the first conductive column. in a conductive column 3 . Because the first conductive column 3 has a certain diameter, the heat dissipation is high, and the reliability is high and not easy to be damaged, so that the flip-chip radio frequency chip has high heat dissipation and reliability; at the same time, the radio frequency bare chip 1 is flip-chipped on the substrate 2 surface, can effectively reduce the volume of the radio frequency chip, which is conducive to the improvement of the integration degree of the radio frequency chip; since the bonding wire in the prior art is eliminated, in this application, the conductive circuit layer 21 of the substrate 2 will be provided for Conductive lines with preset matching inductance are provided to match the parasitic capacitance brought by the RF die 1 .

有关本发明所提供的一种倒装射频芯片的具体结构将在下述发明实施例中做详细介绍。The specific structure of a flip-chip radio frequency chip provided by the present invention will be described in detail in the following embodiments of the invention.

请参考图6以及图7,图6为本发明实施例所提供的一种具体的倒装射频芯片的结构示意图;图7为图6的侧视结构示意图。Please refer to FIG. 6 and FIG. 7 , FIG. 6 is a schematic structural diagram of a specific flip-chip radio frequency chip according to an embodiment of the present invention; FIG. 7 is a schematic side view of the structure of FIG. 6 .

区别于上述发明实施例,本发明实施例是在上述发明实施例的基础上,进一步的对倒装射频芯片的结构进行具体限定。其余内容已在上述发明实施例中进行了详细介绍,在此不再进行赘述。Different from the above embodiments of the invention, the embodiments of the present invention further specifically limit the structure of the flip-chip radio frequency chip on the basis of the above embodiments of the invention. The rest of the content has been described in detail in the above embodiments of the invention, and will not be repeated here.

参见图6以及图7,在本发明实施例中,所述基板2背向所述射频裸片1一侧表面具有第二信号引脚,所述第二信号引脚表面设置有第二导电柱4。Referring to FIG. 6 and FIG. 7 , in the embodiment of the present invention, the surface of the substrate 2 facing away from the RF die 1 has second signal pins, and the surface of the second signal pins is provided with second conductive posts 4.

上述位于基板2背向射频裸片1一侧表面的第二信号引脚为整个射频芯片的引脚,该第二信号引脚表面固定有第二导电柱4,该第二导电柱4即使用过程中射频芯片与外界其余部件,利于安装有该射频芯片的电路板之间通讯的通道。在具体安装本发明实施例所提供的射频芯片时,该射频芯片会倒装于电路板表面,该射频芯片会具体通过第二信号引脚与第二导电柱4电连接。需要说明的是,上述第二信号引脚通常不具有伸出的管脚,即上述第二信号引脚通常呈片状,位于基板2背向射频裸片1一侧表面。此时,射频芯片与电路板之间进行通讯所产生的电信号会经由第二导电柱4传递。The above-mentioned second signal pins located on the side surface of the substrate 2 facing away from the RF die 1 are the pins of the entire RF chip. The surface of the second signal pins is fixed with a second conductive column 4, and the second conductive column 4 is ready for use. During the process, the radio frequency chip and other external components are beneficial to the communication channel between the circuit board on which the radio frequency chip is installed. When installing the radio frequency chip provided by the embodiment of the present invention, the radio frequency chip will be flipped on the surface of the circuit board, and the radio frequency chip will be electrically connected to the second conductive column 4 through the second signal pin. It should be noted that the above-mentioned second signal pins generally do not have protruding pins, that is, the above-mentioned second signal pins are generally in the shape of sheets and are located on the side of the substrate 2 facing away from the RF die 1 . At this time, the electrical signal generated by the communication between the radio frequency chip and the circuit board will be transmitted through the second conductive column 4 .

具体的,在本发明实施例中,上述第二导电柱4通常为锡柱,锡柱在具有良好导电性的同时,具有一定的柔性,其形状可以轻微的变形,有利于将射频芯片倒装于电路板表面。Specifically, in the embodiment of the present invention, the above-mentioned second conductive column 4 is usually a tin column. The tin column has a certain degree of flexibility while having good electrical conductivity, and its shape can be slightly deformed, which is conducive to flipping the radio frequency chip. on the surface of the circuit board.

在本发明实施例中,所述基板2中的金属层均设置有用于传输所述射频裸片1中信号的导电线。在传统基板2中,金属层包括导电线路层21和地层,其中导电线路层21中设置有用于传输述射频裸片1产生电信号的导电线,而地层通常是一整层金属层,该地层中通常不用于传递射频裸片1产生的电信号,而是被定义为地,即GND。而在本发明实施例中,上述基板2内的金属层均设置有用于传输射频裸片1中信号的导电线,即此时基板2中的金属层均为导电线路层21而非地层,此时基板2中不设置有地层。由于在使用过程中,安装有本发明实施例所提供的射频芯片的线路板中必然设置有地层,而在射频芯片的基板2中不设置有地层可以有效提高安装后地层与上述基板2内用于提供预设匹配电感的导电线之间的高度,即提高预设匹配电感与地层之间的高度,从而有效增加预设匹配电感的Q值,以使上述用于提供预设匹配电感的导电线可以提供高品质电感,实现宽频带低损耗的设计。In the embodiment of the present invention, the metal layers in the substrate 2 are all provided with conductive lines for transmitting signals in the radio frequency die 1 . In the conventional substrate 2, the metal layer includes a conductive line layer 21 and a ground layer, wherein the conductive line layer 21 is provided with conductive lines for transmitting electrical signals generated by the RF die 1, and the ground layer is usually a whole metal layer. is usually not used to transmit the electrical signal generated by the RF die 1, but is defined as the ground, that is, GND. In the embodiment of the present invention, the metal layers in the substrate 2 are all provided with conductive lines for transmitting signals in the RF die 1, that is, the metal layers in the substrate 2 are all conductive circuit layers 21 instead of ground layers. In this case, no formation is provided in the substrate 2 . During use, the circuit board on which the radio frequency chip provided by the embodiment of the present invention is installed must be provided with a ground layer, and the substrate 2 of the radio frequency chip is not provided with a ground layer, which can effectively improve the performance of the ground layer after installation and the internal use of the above-mentioned substrate 2 The height between the conductive lines providing the preset matching inductance, that is, increasing the height between the preset matching inductance and the ground layer, thereby effectively increasing the Q value of the preset matching inductance, so that the above-mentioned conductive lines for providing the preset matching inductance The wire can provide high-quality inductance, enabling broadband and low-loss designs.

本发明实施例所提供的一种倒装射频芯片,通过将基板2中的金属层均设置有用于传输射频裸片1中信号的导电线,使得基板2中不设置有地层,从而提高预设匹配电感与地层之间的高度,从而有效增加预设匹配电感的Q值,以使上述用于提供预设匹配电感的导电线可以提供高品质电感,实现宽频带低损耗的设计。In the flip-chip radio frequency chip provided by the embodiment of the present invention, the metal layers in the substrate 2 are all provided with conductive lines for transmitting signals in the radio frequency bare chip 1, so that the substrate 2 is not provided with a ground layer, thereby improving the preset The height between the matching inductance and the ground layer can effectively increase the Q value of the preset matching inductance, so that the above-mentioned conductive line for providing the preset matching inductance can provide high-quality inductance, and realize a design of broadband and low loss.

本发明还提供了一种射频器件,包括电路板以及如上述任一发明实施例所提供的倒装射频芯片,其中,所述倒装射频芯片与所述电路板通讯连接。有关射频器件的其余结构可以参考现有技术,在此不再进行赘述。The present invention also provides a radio frequency device, including a circuit board and the flip-chip radio frequency chip provided in any of the above embodiments of the invention, wherein the flip-chip radio frequency chip is communicatively connected to the circuit board. For the remaining structures of the radio frequency device, reference may be made to the prior art, which will not be repeated here.

由于上述发明实施例所提供的倒装射频芯片具有较高的散热性和可靠性,从而使得本发明实施例所提供的射频器件同样具有较高的散热性和可靠性。Since the flip-chip radio frequency chip provided by the above embodiments of the present invention has high heat dissipation and reliability, the radio frequency device provided by the embodiments of the present invention also has high heat dissipation and reliability.

本说明书中各个实施例采用递进的方式描述,每个实施例重点说明的都是与其它实施例的不同之处,各个实施例之间相同或相似部分互相参见即可。The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments, and the same or similar parts between the various embodiments may be referred to each other.

最后,还需要说明的是,在本文中,诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来,而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下,由语句“包括一个……”限定的要素,并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。Finally, it should also be noted that in this document, relational terms such as first and second are used only to distinguish one entity or operation from another, and do not necessarily require or imply these entities or that there is any such actual relationship or sequence between operations. Moreover, the terms "comprising", "comprising" or any other variation thereof are intended to encompass a non-exclusive inclusion such that a process, method, article or device that includes a list of elements includes not only those elements, but also includes not explicitly listed or other elements inherent to such a process, method, article or apparatus. Without further limitation, an element qualified by the phrase "comprising a..." does not preclude the presence of additional identical elements in a process, method, article or apparatus that includes the element.

以上对本发明所提供的一种倒装射频芯片及一种射频器件进行了详细介绍。本文中应用了具体个例对本发明的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本发明的方法及其核心思想。应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以对本发明进行若干改进和修饰,这些改进和修饰也落入本发明权利要求的保护范围内。A flip-chip radio frequency chip and a radio frequency device provided by the present invention have been described in detail above. The principles and implementations of the present invention are described herein by using specific examples, and the descriptions of the above embodiments are only used to help understand the method and the core idea of the present invention. It should be pointed out that for those skilled in the art, without departing from the principle of the present invention, several improvements and modifications can also be made to the present invention, and these improvements and modifications also fall within the protection scope of the claims of the present invention.

Claims (7)

1.一种倒装射频芯片,其特征在于,包括射频裸片和基板;1. a flip chip radio frequency chip, is characterized in that, comprises radio frequency bare chip and substrate; 所述射频裸片位于所述基板表面,所述射频裸片朝向所述基板一侧表面设置有第一信号引脚,所述第一信号引脚通过第一导电柱固定于所述基板朝向所述射频裸片一侧表面;所述基板的导电线路层中设置有用于提供预设匹配电感的导电线。The radio frequency die is located on the surface of the substrate, and a surface of the radio frequency die facing the substrate is provided with a first signal pin, and the first signal pin is fixed to the substrate through a first conductive column and faces the substrate. A surface of one side of the radio frequency bare chip; a conductive line for providing a preset matching inductance is arranged in the conductive circuit layer of the substrate. 2.根据权利要求1所述的倒装射频芯片,其特征在于,所述第一导电柱为铜柱。2 . The flip-chip radio frequency chip of claim 1 , wherein the first conductive pillars are copper pillars. 3 . 3.根据权利要求2所述的倒装射频芯片,其特征在于,所述铜柱横截面的直径不大于1mm。3 . The flip-chip radio frequency chip according to claim 2 , wherein the diameter of the cross section of the copper pillar is not greater than 1 mm. 4 . 4.根据权利要求1所述的倒装射频芯片,其特征在于,所述基板背向所述射频裸片一侧表面具有第二信号引脚,所述第二信号引脚表面设置有第二导电柱。4 . The flip-chip RF chip according to claim 1 , wherein a surface of the substrate facing away from the RF die has a second signal pin, and a surface of the second signal pin is provided with a second signal pin. 5 . Conductive post. 5.根据权利要求4所述的倒装射频芯片,其特征在于,所述第二信号引脚为锡柱。5 . The flip-chip radio frequency chip of claim 4 , wherein the second signal pins are tin pillars. 6 . 6.根据权利要求1至5任一项权利要求所述的倒装射频芯片,其特征在于,所述基板中的金属层均设置有用于传输所述射频裸片中信号的导电线。6 . The flip-chip radio frequency chip according to claim 1 , wherein the metal layers in the substrate are all provided with conductive lines for transmitting signals in the radio frequency die. 7 . 7.一种射频器件,其特征在于,包括电路板和如权利要求1至6任一项权利要求所述的倒装射频芯片;所述倒装射频芯片与所述电路板通讯连接。7. A radio frequency device, comprising a circuit board and the flip-chip radio frequency chip according to any one of claims 1 to 6, wherein the flip-chip radio frequency chip is communicatively connected to the circuit board.
CN201910754759.1A 2019-08-15 2019-08-15 A flip chip radio frequency chip and a radio frequency device Pending CN110429072A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910754759.1A CN110429072A (en) 2019-08-15 2019-08-15 A flip chip radio frequency chip and a radio frequency device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910754759.1A CN110429072A (en) 2019-08-15 2019-08-15 A flip chip radio frequency chip and a radio frequency device

Publications (1)

Publication Number Publication Date
CN110429072A true CN110429072A (en) 2019-11-08

Family

ID=68416532

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910754759.1A Pending CN110429072A (en) 2019-08-15 2019-08-15 A flip chip radio frequency chip and a radio frequency device

Country Status (1)

Country Link
CN (1) CN110429072A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102339407A (en) * 2010-07-27 2012-02-01 钒创科技股份有限公司 Thin circuit board with induction coil and manufacturing method thereof
CN103119786A (en) * 2011-02-28 2013-05-22 株式会社村田制作所 wireless communication device
CN108711569A (en) * 2018-08-10 2018-10-26 付伟 With the multichip packaging structure and preparation method thereof for accommodating filter chip chamber

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102339407A (en) * 2010-07-27 2012-02-01 钒创科技股份有限公司 Thin circuit board with induction coil and manufacturing method thereof
CN103119786A (en) * 2011-02-28 2013-05-22 株式会社村田制作所 wireless communication device
CN108711569A (en) * 2018-08-10 2018-10-26 付伟 With the multichip packaging structure and preparation method thereof for accommodating filter chip chamber

Similar Documents

Publication Publication Date Title
CN201163660Y (en) Integration antenna
CN101820096A (en) Compact antenna system with 2nd order diversity
US8558645B2 (en) Apparatus for improving transmission bandwidth
KR20140082815A (en) Low-profile wireless connectors
US11276942B2 (en) Highly-integrated multi-antenna array
TWI708434B (en) Highly-integrated multi-antenna array
CN103117440A (en) Low-loss flat transmission line
WO2021233288A1 (en) Touch display screen and electronic device
CN118888531A (en) Semiconductor packaging device
CN111799181A (en) Electronic package and method of making the same
CN107947823B (en) Radio frequency device
WO2023231922A1 (en) Display component and display device
TWI517494B (en) Electronic package
CN103259070A (en) Transmission line capable of lowering loss
CN110429072A (en) A flip chip radio frequency chip and a radio frequency device
CN102316663A (en) Circuit board with jumper wire structure
CN103944021A (en) Micro Secure Digital Adapter
CN202633498U (en) Multi-frequency antenna and electronic device with same
CN203192932U (en) Antenna installation for reduced headroom
CN117220018A (en) A dual-band MIMO antenna structure
CN203644941U (en) Dual-band dual-feed antenna and antenna assembly provided with same
CN115933070A (en) Optical module and laser assembly
CN114759332A (en) Transmission line and electronic equipment
CN113299184A (en) Display module and electronic equipment
CN112054294B (en) Compact cross-polarized twelve-unit 5G multi-input multi-output antenna

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20191108

RJ01 Rejection of invention patent application after publication