Summary of the invention
It is an object of the present invention to: in view of the deficiencies of the prior art, a kind of microform display device is provided, can be improved
The resolution ratio of display device improves user experience, additionally it is possible to which the size for reducing pixel helps to reduce production cost.
To achieve the goals above, the present invention adopts the following technical scheme:
A kind of microform display device, including multiple pixels and light-emitting component, each pixel include driving transistor, electricity
Voltage-controlled transistor processed, first switch transistor and second switch transistor, the voltage-controlled transistor are provided with gate terminal,
When keeping applying bias voltage to the gate terminal, the voltage-controlled transistor controls the electric leakage of the driving transistor
Pressure, the first switch transistor transmission data-signal give the gate terminal, and the second switch transistor is arranged described
It drives between transistor and the light-emitting component, the electric current flowing of transistor is driven described in the second switch transistor controls.
As a kind of a kind of improvement of microform display device of the present invention, the driving transistor is provided with triode
Region.
As a kind of a kind of improvement of microform display device of the present invention, the gate terminal and the bias voltage
Offset line connection.
As a kind of a kind of improvement of microform display device of the present invention, the voltage-controlled transistor is additionally provided with
First terminal and Second terminal, the first terminal are connect with the second switch crystal, the Second terminal and the driving
The drain terminal of transistor connects.
As a kind of a kind of improvement of microform display device of the present invention, the voltage-controlled transistor is arranged in institute
It states between driving transistor and the second switch transistor.
As a kind of a kind of improvement of microform display device of the present invention, the microform display device further includes biasing
Voltage supplier, the bias voltage supply unit generates the bias voltage, and is output to the gate terminal.
As a kind of a kind of improvement of microform display device of the present invention, the microform display device further includes control
Portion, scanning driving part and data driver, the control unit respectively with the scanning driving part, the data driver and described
The electrical connection of bias voltage supply unit.
As a kind of a kind of improvement of microform display device of the present invention, the bias voltage supply unit includes series connection
Operational amplifier and normal voltage generating unit.
The second object of the present invention is to provide a kind of control method of microform display device, comprising:
Generate bias voltage;
Apply bias voltage to the gate terminal of voltage-controlled transistor, and the state remained up;
The drain voltage of control driving transistor, then after driving transistor is connected with light-emitting component, control driving crystal
The electric current flowing of pipe.
The beneficial effects of the present invention are the present invention includes multiple pixels and light-emitting component, and each pixel includes driving
Dynamic transistor, voltage-controlled transistor, first switch transistor and second switch transistor, the voltage-controlled transistor setting
There is gate terminal, when keeping applying bias voltage to the gate terminal, it is brilliant that the voltage-controlled transistor controls the driving
The drain voltage of body pipe, the first switch transistor transmission data-signal give the gate terminal, the second switch transistor
It is arranged between the driving transistor and the light-emitting component, driving transistor described in the second switch transistor controls
Electric current flowing.The present invention can be improved the resolution ratio of display device, improve user experience, additionally it is possible to reduce the ruler of pixel
It is very little, help to reduce production cost.
Embodiment 1
As shown in figures 1-4, a kind of microform display device, including multiple pixels and light-emitting component, each pixel include driving
Transistor, voltage-controlled transistor, first switch transistor and second switch transistor, voltage-controlled transistor are provided with gate pole
Terminal, when keeping applying bias voltage to gate terminal, the drain voltage of voltage-controlled transistor control driving transistor, first is opened
Transistor transmission data-signal is closed to gate terminal, the setting of second switch transistor is driving between transistor and light-emitting component,
The electric current flowing of second switch transistor controls driving transistor.
Preferably, driving transistor is provided with triode region;Gate terminal is connected with the offset line of bias voltage;Voltage
Control transistor is additionally provided with first terminal and Second terminal, and first terminal is connect with second switch crystal, Second terminal and drive
The drain terminal connection of dynamic transistor;Voltage-controlled transistor setting is between driving transistor and second switch transistor;It is miniature
Display device further includes bias voltage supply unit 124, and bias voltage supply unit 124 generates bias voltage, and is output to gate terminal
Son;Microform display device further includes control unit 121, scanning driving part 122 and data driver 123, control unit 121 respectively with sweep
Driving portion 122, data driver 123 and bias voltage supply unit 124 is retouched to be electrically connected;Bias voltage supply unit 124 includes series connection
Operational amplifier 131 and normal voltage generating unit 133.
Display device may include: light-emitting component array and drive circuit substrate.Light-emitting component array can be with driving electricity
Base board combines.Display device can be microform display device.
Light-emitting component array may include most light-emitting components.Light-emitting component can be Light-emitting diode LED.Light-emitting component
It can be miniature or nanometer unit size Light-emitting diode LED.Most light emitting diodes can be grown on semiconductor crystal wafer, with
Manufacture at least one light-emitting component array.It is therefore not necessary in the case that light emitting diode is transferred to drive circuit substrate individually,
The mode that light-emitting component array is combined with drive circuit substrate can be manufactured into display device.
Respectively pixel electricity corresponding with the light emitting diode in light-emitting component array can be arranged in drive circuit substrate
Road.The pixel circuit on light emitting diode and drive circuit substrate in light-emitting component array can be constituted in a manner of electrical connection
Pixel.
The display device of one embodiment of the invention may include: pixel portion and driving portion.
Pixel portion can be arranged in image display area.The shaped formula of pixel portion may include that for example, rectangular, word
Multiple pixel PX that shape etc. arranges in a variety of manners.Pixel PX can emit a kind of color, for example, in red, cyan, green, white
A kind of color can be emitted in color.Pixel PX can also emit other colors other than red, cyan, green, white.
Pixel PX may include light-emitting component.Light-emitting component is also possible to sub- light-emitting component.For example, light-emitting component can be
Light-emitting diode LED.Light-emitting component can issue the light of single peak value wavelength, can also issue the light of most peak wavelengths.
Pixel PX may further include the pixel circuit being connected with light-emitting component.Pixel circuit may include: at least
One thin film transistor (TFT) and at least one capacitor etc..Pixel circuit can be realized with semiconductor laminated structure on substrate.
In pixel portion, apply by the scan line SL-SLn arranged apart for applying scanning signal to pixel PX, and to pixel PX
The data line DL-DLm of data-signal.Scan line SL-SLn is respectively connected with the pixel PX arranged in the same row, data line
What DL-DLm was respectively connected with the pixel PX arranged in same row.
In pixel portion, the light emitting control line EL-ELn that arrangement applies LED control signal to pixel PX can be added.It shines
Control line EL-ELn is respectively connected with the pixel PX arranged in the same row, arranged apart with scan line SL-SLn.
In pixel portion, the offset line BL-BLn that arrangement applies bias voltage to pixel PX can be added.Offset line BL-BLn
Respectively it is connected with the pixel PX arranged in the same row, it is arranged apart with scan line SL-SLn.
Driving portion has the non-display area on pixel portion periphery, and can drive and control pixel portion.Driving portion can wrap
It includes: control unit 121, scanning driving part 122, data driver 123 and bias voltage supply unit 124.
Under the control of control unit 121, scanning driving part 122 can sequentially apply scanning signal to scan line SL-SLn, number
Data-signal can be applied to each pixel PX according to driving portion 123.Pixel PX is for passing through the received scanning of scan line SL-SLn at this time
Signal is responded, and to pass through the voltage class or the corresponding brightness of current class of the received data-signal of data line DL-DLm
It carries out luminous.
Bias voltage supply unit 124, can be supplied to offset line BL-BLn control each pixel PX driving transistor leakage pressure with
Connect the bias voltage of biasing transistor.
Control unit 121, scanning driving part 122, data driver 123, bias voltage supply unit 124 are respectively with stand-alone integrated
After circuit chip or single IC for both chip form are formed, can directly it be installed in the thereon for forming pixel portion,
It can be attached to above flexible base plate circuit flexible printed circuit film or with TCPtape carrier
Package mode is attached to substrate, or is formed directly into substrate.
The pixel PX of line n and m column will be illustrated.Pixel PX is one of the most pixels for including in line n,
Scan line SLn corresponding with line n and data line DLm corresponding with m column are connected.
Pixel PX can be with the scan line SLn of transmission scanning signal and the data of scan line SLn Cross transfer data-signal
Line DLm, the power supply line for transmitting the first supply voltage VDD are connected.
Pixel PX may include: light emitting diode ED and the pixel circuit that is connected with light emitting diode ED.Pixel circuit
May include: first to third transistor T1 to T3, biasing transistor BT and capacitor C.First to third transistor T1 extremely
T3 and the respective first terminal for biasing transistor BT can be drain terminal, and Second terminal can be source terminal.
The first transistor T1 may include: the gate terminal being connected with the first terminal of capacitor C, by third crystal
The Second terminal that first terminal that pipe T is connected with light emitting diode ED, second source voltage VSS are connected.Second source electricity
Pressure VSS can be ground voltage GND.The first transistor T1 will play the role of driving transistor, according to second transistor T2
Switch motion receive data-signal after to light emitting diode ED supply electric current.The first transistor T1 can be carried out in low-voltage region
Movement.For example, the first transistor T1 can be acted in triode region.
Second transistor T2 may include: the gate terminal being connected with scan line SLn, be connected with data line DLm
First terminal, the Second terminal being connected with the gate terminal of the first transistor T1.Second transistor T2 will play switch crystal
The effect of pipe is transmitted after receiving scanning signal by scan line SLn and successfully connecting to the gate electrode of the first transistor T1
Pass through the received data-signal of data line DLm.Second transistor T2 can together with the first transistor T1 low-voltage region into
Action is made.Second transistor T2 can be acted in triode region.Data-signal can be converted to the first transistor at this time
The low-voltage of T1 and second transistor T2 act corresponding voltage range.
Third transistor T may include: light emitting control line ELn be connected gate terminal, light emitting diode ED second
The Second terminal that the first terminal of first terminal, biasing transistor BT that electrode is connected is connected.Third transistor T will be played
The effect of switching transistor, after basis is switched on by the received LED control signal of light emitting control line ELn, to light-emitting diodes
The driving current of pipe ED flowing the first transistor T1.After light emitting control line ELn is connected with scanning driving part 122, driven from scanning
Dynamic portion 122 receives LED control signal.In another embodiment, light emitting control line ELn can be with scanning driving part 122 and independence
Light emitting control driving portion is not shown to be connected and is followed by transmitting-receiving optical control signal.Third transistor T can be omitted.
Biasing transistor BT may include: the gate terminal being connected with offset line BLn, second with third transistor T
First terminal that terminal is connected, the Second terminal being connected with the first terminal of the first transistor T1.It is logical to bias transistor BT
It crosses and is remained turned on to the bias voltage that gate terminal applies, can be the voltage control of control the first transistor T1 drain voltage
Transistor processed.The first transistor T1 drain voltage is controlled by biasing transistor BT, the first transistor T1 and second transistor T2 will
Play the role of low-voltag transistor.In one embodiment, biasing transistor BT can control the first transistor T1 drain voltage,
To guarantee the movement in triode region the first transistor T1.
Biasing transistor BT is available to be switched on by the bias voltage that offset line BLn applies.Bias voltage can be use
In the determined grade DC voltage DC for keeping biasing transistor BT on-state always.According to the connection shape of biasing transistor BT
State, the node voltage Vx between the first transistor T1 and biasing transistor BT, i.e. the first transistor T1 drain voltage can be controlled.
The aisle resistance for biasing transistor BT according to bias voltage is variable.That is, biasing transistor BT can be acted with variable linear resistance.
Node voltage Vx, i.e. the first transistor T1 drain voltage are determined according to the aisle resistance of biasing transistor BT.Therefore, will
Bias voltage is controlled so that the drain voltage of the first transistor T1 controls the first transistor T1, to guarantee in triode region domain action
Required voltage conditions.
Capacitor C may include: the first terminal being connected with the gate terminal of the first transistor T1 and and second source
The Second terminal that voltage VSS is connected.
The first electrode of light emitting diode ED can obtain the first supply voltage VDD.The second electrode of light emitting diode ED
It can be connected with the first electrode of third transistor T.Light emitting diode ED will issue brightness light corresponding with data-signal
Mode shows image.
Transistor will be provided with the voltage VDS- electric current IDS characteristic of following formula in triode region, will have in zone of saturation
The voltage VDS electric current IDS characteristic of standby following formula.
IDS=K (VGS-VT)VDS-VDS/...(1)
IDS=K/VGS-VT...(2)
Here, IDS refers to that the drain-source current of transistor, K refer to process transconductance parameters Process Transconductance
Parameter, K can be the capacitor Cox, logical with the mobility Mobility of channel carrier electronics Electron, gate region
The identical parameter of road size.Channel sized can be defined with width ratio Width/Length to length.VGS is transistor
Gate source voltage, VT is that threshold voltage Threshold Voltage, VDS are drain-source voltages.
The first transistor T1 as driving transistor in the operation condition that triode region is acted is VGS-VT>VDS。
Wherein VDSIt is determined by node voltage Vx, node voltage Vx is controlled by bias voltage, therefore by the control to bias voltage, can be with
Guarantee the regular event of the first transistor T1 in triode region.The first transistor T1 when triode region is acted,
It will be provided with linear characteristic identical with resistance.As a result, the first transistor T1 can be linearized with output-input voltage by VGS
Export electric current, i.e. IDS.
The first transistor T1 can eliminate drain-source current when threshold voltage variation because in triode region domain action
Variation, and because of low mutual conductance Gm, wide input voltage codomain range can be used.
When being connected such as the drain terminal of the first transistor T1 with the second electrode cathode electrode of light-emitting element E D, it is desirable that use
The high voltage transistor for having high voltage characteristic, it is thus possible to make a very bad impression to threshold voltage mismatch mismatch characteristic.
Operating space is limited in triode region by control the first transistor T1 drain voltage by the embodiment of the present invention
It is interior, to limit drain-source voltage operation voltage range.It therefore can be by the transistor with low destruction voltage as driving transistor
It uses.
Bias voltage supply unit 124 may include: operational amplifier 131Operational Amplifier and standard electric
Press generating unit 133.
133 phase of normal voltage generating unit of the first input end of operational amplifier 131+with the supply source of normal voltage Vref
Connection, what the second input terminal-was connected with output end.The output end of operational amplifier 131 is connected with offset line BLn.
In one embodiment, bias voltage supply unit 124 is constituted with single operational amplifier 131, operational amplifier 131 it is defeated
Outlet can be connected with most offset line BL-BLn.In another embodiment, bias voltage supply unit 124 by majority first to
N-th operational amplifier 131 is constituted, and each output end of most the first to the n-th operational amplifiers 131 can be with most offset line BL-
Corresponding offset line is connected in BLn.
Bias voltage supply unit 124 is to guarantee that the first transistor T1 is acted in low-voltage region, brilliant with control first
Body pipe T1 drain voltage can generate to offset line BLn and apply the bias voltage that can determine biasing transistor BT aisle resistance
VBIAS.Bias voltage supply unit 124 is to guarantee that the first transistor T1 meets the operation condition of VGSVT > VDS, to offset line BLn
It generates and applies the bias voltage VBIAS that can determine biasing transistor BT aisle resistance.
Drive the operating space of transistor as in zone of saturation in use, sufficient defeated because of high transconductance Gm value to ensure
Enter voltage regime, drives transistor, or additional big resistance using long-channel sometimes.In addition, to reduce threshold voltage mismatch
The influence of mismatch uses large-sized driving transistor sometimes.It is difficult to embody high resolution micro display device at this time.
The embodiment of the present invention can control the drain voltage of driving transistor, and the operating space of transistor will be driven to be limited in
Triode region, and optimize mutual conductance Gm value, the influence of threshold voltage mismatch mismatch is eliminated with short channels drive transistor, with
Ensure wide input voltage codomain.
In addition, the embodiment of the present invention applies external bias, the operation voltage of transistor and driving portion can will be driven to limit
High-resolution pixel electricity may be implemented in the case where microform display device is without using high voltage transistor for low voltage range
Road.