CN110335816A - Aluminium interconnection structure and forming method thereof - Google Patents

Abstract

A kind of aluminium interconnection structure and forming method thereof, which comprises provide semiconductor substrate, the semiconductor substrate surface is sequentially formed with metal material layer and patterned mask layer, and the metal material layer includes aluminium-containing metal material layer；Etch the metal material layer；Remove the patterned mask layer；The aluminium interconnection structure is cleaned in 25 DEG C to 40 DEG C of temperature condition deionised waters.The structure and method reduce a possibility that hole is generated in the aluminum metallic material layer, improve the electrical connection properties and reliability of aluminium interconnection structure.

Description

Aluminum interconnect structure and method of forming the same

technical field

The present application relates to the field of semiconductor manufacturing, in particular, to an aluminum interconnection structure and a method for forming the same.

Background technique

In the manufacture of integrated circuits, metal interconnection wires are used inside the chip to connect semiconductor devices. Currently, metal materials commonly used as metal interconnection wires include aluminum, copper, tungsten, and the like.

1 to 3 are structural schematic diagrams of each step of the method for forming an aluminum interconnect structure in the prior art. The method includes: referring to FIG. 1 , providing a semiconductor substrate 110, and sequentially forming a first barrier layer 120, an aluminum-containing metal material layer 130, and a second barrier layer 140, wherein the first barrier layer 120 is a titanium layer, a titanium nitride layer, or any one or more of a titanium layer and a titanium nitride layer combination, the aluminum-containing metal material layer 130 is, for example, metal aluminum or an alloy material of aluminum, and the second barrier layer 140 is a titanium layer, a titanium nitride layer, or any one or more of a titanium layer and a titanium nitride layer The combination. Subsequently, a mask layer 150 is formed on the surface of the second barrier layer 140, and the mask layer 150 is, for example, a patterned photoresist layer. The mask layer 150 is used to define the location and size of the aluminum interconnect structure.

Referring to FIG. 2, under the protection of the mask layer 150, the second barrier layer 140, the aluminum-containing metal material layer 130, and the first barrier layer 120 are sequentially etched. With continued reference to FIG. 3, the mask is removed by an ashing process. The film layer 150 forms the aluminum interconnection structure.

However, as shown in FIG. 4 , the prior art method for forming the aluminum interconnection structure easily forms holes 160 on the sidewall of the aluminum-containing metal material layer 130 , affecting the electrical connection performance of the aluminum interconnection structure. Therefore, it is necessary to provide a new method for forming an aluminum interconnection structure.

Contents of the invention

The technical problem to be solved by the technical solution of the present application is to provide an improved method for forming an aluminum interconnection structure in view of the defect that the existing aluminum interconnection structure formation method is prone to produce holes on the sidewall of the aluminum-containing metal material layer, eliminating all The hole in the sidewall of the aluminum-containing metal material layer.

One aspect of the present application provides a method for forming an aluminum interconnection structure, comprising:

Provide a semiconductor substrate, the surface of the semiconductor substrate is sequentially formed with a metal material layer and a patterned mask layer, the metal material layer includes an aluminum-containing metal material layer; etching the metal material layer; removing the patterned mask layer; cleaning the aluminum interconnection structure with deionized water at a temperature of 25° C. to 40° C.

In some embodiments of the present application, the process of removing the patterned mask layer is an ashing process, wherein the gas for performing the ashing process includes H ₂ O and O ₂ .

In some embodiments of the present application, the aluminum-containing metal material layer is formed by a sputtering deposition process, wherein the sputtering deposition process is performed at a temperature of 350°C to 380°C.

In some embodiments of the present application, the metal material layer is etched by a dry etching process, wherein the etching gas of the dry etching process includes one of Cl ₂ , CCl ₄ and BCl ₃ or Various.

In some embodiments of the present application, the etching gas of the dry etching process further includes one or more of N ₂ and CHF ₃ .

In some embodiments of the present application, the etching pressure of the dry etching process ranges from 8mt to 20mt.

In some embodiments of the present application, the flow rate of the Cl ₂ or CCl ₄ or BCl ₃ ranges from 30 sccm to 50 sccm, and the flow rate of the N ₂ or CHF ₃ ranges from 5 sccm to 15 sccm.

In some embodiments of the present application, the aluminum-containing metal material layer is an Al-Cu alloy.

In some embodiments of the present application, the metal material layer includes a first barrier layer, an aluminum-containing metal material layer and a second barrier layer sequentially formed on the surface of the semiconductor substrate.

Another aspect of the present application provides an aluminum interconnection structure formed by any method provided in the first aspect above.

The aluminum interconnection structure and its forming method described in the embodiments of the present application adjust the cleaning process of the deionized water, and clean the aluminum interconnection structure at a temperature of 25°C to 40°C, reducing the aluminum-containing Possibility of voids in the metallic material layer. Further, in the process of ashing the photoresist pattern, H ₂ O/O ₂ is used as the ashing gas; the sputtering deposition process of the aluminum-containing metal material layer is carried out in the range of 350°C to 380°C; In the process of etching the metal material layer, adjust the composition of the etching gas, add gases such as nitrogen or CHF ₃ , and adjust the flow rate of the etching gas, etching temperature, etc., to further reduce the production of the aluminum metal material layer. The possibility of voids improves the electrical connection performance and reliability of aluminum interconnect structures.

Additional features of the present application will be set forth in part in the description which follows. Through this explanation, the content described in the following figures and embodiments will become apparent to those of ordinary skill in the art. The inventive points in this application can be fully elucidated by practicing or using the methods, means and combinations thereof set forth in the detailed examples discussed below.

Description of drawings

The following figures describe in detail exemplary embodiments disclosed in this application. Wherein the same reference numerals denote similar structures in the several views of the drawings. Those of ordinary skill in the art will understand that these embodiments are non-limiting, exemplary embodiments, and that the accompanying drawings are for illustration and description purposes only, and are not intended to limit the scope of the present disclosure, and other embodiments are also possible. Complete the invention intention among the application likewise. It should be understood that the drawings are not drawn to scale. in:

1 to 3 are structural schematic diagrams of each step of a manufacturing method of an aluminum interconnection structure in the prior art;

FIG. 4 is a schematic structural diagram of holes in the sidewall of an aluminum interconnect structure formed in the prior art;

5 is a schematic diagram of a tool used in the aluminum sputter deposition process in the present disclosure;

Fig. 6 is a schematic diagram of the generation of Al·Cl on the sidewall of the aluminum-containing metal material layer.

FIG. 7 is a process flow chart of a method for forming an aluminum interconnection structure according to an embodiment of the present application.

Detailed ways

The following description provides specific application scenarios and requirements of the application, with the purpose of enabling those skilled in the art to manufacture and use the contents of the application. Various local modifications to the disclosed embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments and embodiments without departing from the spirit and scope of the disclosure. application. Thus, the present disclosure is not limited to the embodiments shown, but is to be accorded the widest scope consistent with the claims.

The technical solution of the present invention will be described in detail below in conjunction with the embodiments and the accompanying drawings.

The method for forming an aluminum interconnection structure includes sequentially forming a metal material layer and a patterned mask layer on the surface of the semiconductor substrate, wherein the metal material layer includes an aluminum-containing metal material layer; and etching the metal material layer, Steps such as removing the patterned mask layer. After etching the metal material layer and removing the patterned mask layer, a cleaning step is also included to remove the pollution and impurities on the film layer or the surface of the aluminum interconnection structure after the steps. Wherein, the process of forming the metal material layer is, for example, a vapor deposition process, such as a sputtering deposition process; the process of etching the metal material layer is, for example, a dry etching process; the patterned mask layer is, for example, a photo For the resist layer, the process of removing the patterned mask layer is, for example, an ashing process. The cleaning step is, for example, cleaning with deionized water.

The inventors have found through research that the hole generated by the method on the sidewall of the aluminum-containing metal material layer is related to multiple factors.

In the inventor's research, it was found that the holes are mainly formed on the sidewall of the aluminum-containing metal material layer. The aluminum-containing metal material layer is, for example, metal aluminum or an alloy of aluminum, such as Al- Cu alloy. The process of forming the aluminum-containing metal material layer is, for example, a sputtering deposition process. FIG. 5 is a schematic diagram of a sputtering deposition device, including a cavity 20, and the semiconductor substrate 21 is arranged at the bottom of the cavity 20. On the carrying platform 22, the top of the chamber 20 generates an electric field and a magnetic field through coils, and converts the sputtering gas flowing into the chamber into plasma, thereby performing the sputtering deposition process. The sputtering deposition process involves parameters such as power, pressure, and temperature.

The inventors found that the formation of holes in the aluminum-containing metal material layer is related to the temperature of the sputtering deposition process. Relatively high sputter deposition temperatures can lead to more void formation on the sidewalls of the aluminum-containing metal material layer, and thus to a higher void density. This is because, when the sputtering temperature increased, the grain size of the aluminum grains in the formed aluminum-containing metal material layer was smaller, so the specific surface area (the total area of the substance per unit mass) of the aluminum grains was larger, which It will significantly increase the contact and interaction area between chlorine, fluorine and other substances and aluminum, and the time for chlorine gas to pass between aluminum grains. As a result, more easily soluble impurities (such as Al·Cl, etc.) are formed on the sidewall of the aluminum-containing metal material layer, thereby causing more holes to be formed in the aluminum-containing metal material layer.

The inventors found that the process of etching the metal material layer is also closely related to the formation of holes in the aluminum-containing metal material layer. For example, in a dry etching process, when the aluminum-containing metal material layer to be etched is aluminum or an aluminum-based alloy (such as Al—Cu), the etching gas generally includes chlorine (Cl ₂ ).

And Cl2 may be an important factor leading to the formation of voids _on the sidewall of the aluminum-containing metal material layer. As shown in Figure ₆ , Cl2 gas will enter the boundary of the aluminum grains on the side wall of the aluminum-containing metal material layer, so that the aluminum grains on the side wall of the aluminum-containing metal material layer will be transformed into a combination containing Al Cl 280 (or compound, the specific form is related to the amount of chlorine infiltrated and the ratio of chlorine to aluminum at this position). Al·Cl is generally formed through ionic bonds, and thus is soluble in water or an aqueous solution, resulting in holes on the sidewalls of the aluminum-containing metal material layer.

In addition, in the etching process and the subsequent cleaning process, some impurities or pollutants (such as oxygen (O ₂ ) and moisture (H ₂ O)) in the etching and cleaning environment can also promote or help Cl atoms or ions and The combination of metal aluminum causes aluminum atoms on the sidewall of the aluminum-containing metal material layer to combine with Cl atoms or ions, resulting in the formation of holes on the sidewall of the aluminum-containing metal material layer. For example, the inventors found that, under the condition that other conditions remain unchanged, if the environment contains oxygen, moisture, etc., the density of holes formed on the sidewall of the aluminum-containing metal material layer increases significantly.

In the process of ashing the patterned mask layer, a gas including oxygen and fluorine is generally used, for example, an ashing gas including CF ₄ and O ₂ . However, the inventors have found that the presence of CF ₄ will make the formation of holes on the sidewall more serious. This may be caused by the following process occurring on the sidewall of the Al-containing metal material layer: the Al Cl formed on the sidewall or _on the aluminum grains near the sidewall can be further transformed into Al under the action of CF4 ·F. Compared with Al·Cl, Al·F is more soluble in water or aqueous solution. Moreover, under certain conditions, such as high temperature, the migration of Al F may be accelerated, which makes the problem of hole formation even more serious. Therefore, the presence of CF ₄ may lead to the formation of more voids in the Al-containing metal material layer.

In addition, the inventors found that the cleaning temperature with deionized water has a very important influence on the formation of holes in the aluminum-containing metal material layer. Higher temperature will increase the reactivity of many substances, such as chlorine, fluorine and other elements that penetrate into the aluminum-containing metal material layer during the etching process will have higher reactivity, so it is easier to dissolve in high-temperature water environment Dissolving, resulting in the formation of more voids in the layer of aluminum-containing metal material.

In view of the above description, the formation of holes in the aluminum-containing metal material layer is the result of the joint action of various factors. The improvement and optimization of the process among the various factors can effectively reduce the formation of holes in the aluminum-containing metal material layer.

Therefore, the embodiment of the present application provides a method for forming an aluminum interconnection structure, which can reduce the formation of holes in the aluminum-containing metal material layer. Referring to FIG. 7 , it is a process flow chart of the method for forming an aluminum interconnection structure according to the embodiment of the present application. The method includes, step S1, providing a semiconductor substrate, and the surface of the semiconductor substrate is sequentially formed with metal materials. layer and a patterned mask layer, the metal material layer includes an aluminum-containing metal material layer; Step S2, etching the metal material layer; Step S3, removing the patterned mask layer; Step S4, at 25°C The aluminum interconnect structure was cleaned with deionized water at a temperature of 40°C.

The formed aluminum interconnect structure is shown in FIG. 6 , including a semiconductor substrate 210 and a metal material layer located on the semiconductor substrate 210, wherein the metal material layer includes a layer located on the semiconductor substrate 210 in turn. The first barrier layer 220, the aluminum-containing metal material layer 230 and the second barrier layer 240, wherein the first barrier layer 220 is a titanium layer, a titanium nitride layer, or a titanium layer and a titanium nitride layer Any one or multiple combinations, the aluminum-containing metal material layer 230 is such as metal aluminum or an alloy material of aluminum, and the second barrier layer 240 is a titanium layer, a titanium nitride layer, or a combination of a titanium layer and a titanium nitride layer any one or combination of several.

As mentioned earlier, when the temperature rises, elements such as chlorine and fluorine in the aluminum-containing metal material layer will have higher reactivity, so they are easier to dissolve in a high-temperature water environment, resulting in the formation of more aluminum-containing metal material layers. Therefore, appropriately reducing the temperature of deionized water cleaning can significantly reduce the formation of pores. Therefore, the process of deionized water cleaning should be carried out at as low a temperature as possible, while at the same time, the cleaning effect should be guaranteed. In the examples of the present application, the cleaning temperature with deionized water should be controlled within the range of 25°C to 40°C, preferably 30°C to 35°C, so as to minimize the formation of holes and ensure the cleaning effect at the same time. The inventors have found that when the deionized water cleaning temperature is greater than 40° C., the number of holes formed in the aluminum-containing metal material layer increases, and the higher the temperature, the more holes are formed in the aluminum-containing metal material layer. For example, when the deionized water cleaning temperature is 60° C., the holes formed in the aluminum-containing metal material layer are obviously more than when the deionized water cleaning temperature is 40° C.

In some embodiments of the present application, the process of removing the patterned mask layer is an ashing process, and the gas for performing the ashing process includes H ₂ O and O ₂ . Wherein, the H ₂ O is gaseous water. As mentioned in the embodiment of the present application, when the ashing process gas includes CF ₄ and O ₂ , CF ₄ will form Al·F on the sidewall of the aluminum-containing metal material layer to promote the formation of holes. Therefore, in this embodiment, the ashing gas including _H2O and _O2 is used to completely avoid the formation of Al·F on the sidewall of the aluminum-containing metal material layer, which can significantly reduce the occurrence of holes in the sidewall of the aluminum-containing metal material layer. form.

In some embodiments of the present application, in addition to using H ₂ O/O ₂ instead of CF ₄ /O ₂ , controlling the temperature of the ashing process at an appropriate low level can also limit the formation of holes, such as ashing The temperature is 180°C to 250°C, optional, for example, 180°C, 200°C, 225°C, 250°C. The inventors found that when the ashing temperature is greater than 250 degrees Celsius, the number of holes in the side wall of the aluminum-containing metal material layer increases.

In one embodiment of the present application, the ashing gas including H ₂ O and O ₂ is used, wherein the flow ratio of H ₂ O and O ₂ is 2-4:1, for example, 3:1 can better limit generation of voids in the sidewall of the aluminum-containing metal material layer.

In a specific embodiment of the present application, an ashing gas including H ₂ O and O ₂ is used, wherein the flow rate of H ₂ O is in the range of 450-500 sccm, the flow rate of O ₂ is 150-200 sccm, and the ashing temperature is The temperature is 200 degrees Celsius, and the pressure in the reaction chamber is 700mt to 1000mt. The process limits the generation of voids on the sidewall of the aluminum-containing metal material layer.

In some embodiments of the present application, the metal material layer is etched using a dry etching process, and the metal material layer includes a metal material layer containing aluminum. The etching gas for etching the metal material layer includes Cl-based gas, and the Cl-based gas includes one or more of chlorine, carbon tetrachloride (CCl ₄ ), and boron trichloride (BCl ₃ ). mix. Optionally, the etching gas includes a mixture of Cl ₂ and one or both of carbon tetrachloride (CCl ₄ ) and boron trichloride (BCl ₃ ).

Since the presence of Cl may combine with Al atoms _on the sidewall of the aluminum-containing metal material layer to form easily soluble Al·Cl and other substances, therefore, in some embodiments of the present disclosure, the dry etching method is further optimized craft. Specifically, the etching gas used to etch the metal material layer should have a lower pressure and a higher etching temperature than conventional conditions, so as to reduce the interaction between the aluminum atoms on the sidewall of the aluminum-containing metal material layer and the environment. Cl binding. In some embodiments of the present application, the pressure in the above etching process may be in the range of 8mt to 20mt, and preferably 10mt to 15mt. The inventors found that, under the condition that other process parameters of the etching process remain unchanged, the smaller the etching pressure, the fewer the voids on the sidewall of the aluminum-containing metal material layer.

In some embodiments of the present application, the etching temperature is between 30 degrees Celsius and 50 degrees Celsius. In addition, the flow rate of the chlorine gas can be in the range of 30 sccm (standard cubic centimeters per minute) to 50 sccm, and preferably From 35 sccm to 45 sccm, the flow rate of carbon tetrachloride (CCl ₄ ) or boron trichloride (BCl ₃ ) may be in the range of 30 sccm to 50 sccm. The inventors have found that, under the condition that other process parameters of the etching process remain unchanged, the smaller the flow rate of chlorine gas, the fewer voids on the sidewall of the aluminum-containing metal material layer.

In some embodiments of the present application, the etching gas may be a combination of Cl ₂ and one or more other gases, such as a combination of Cl ₂ and BCl ₃ . In a specific embodiment, the etching gas includes Cl ₂ and BCl ₃ , wherein the reaction chamber pressure is 12-15 mt, the flow rate of Cl ₂ is 40 sccm, and the flow rate of BCl ₃ is 45 sccm, under an inert atmosphere, for example Performing dry etching in an 8 sccm helium atmosphere can further reduce the hole density on the sidewall of the aluminum-containing metal material layer.

In addition, in some embodiments of the present application, the etching gas may also include other gases, such as any one or a combination of nitrogen (N ₂ ) and trifluoromethane (CHF ₃ ), said The flow range of N ₂ or CHF ₃ is 5 sccm to 15 sccm. In some embodiments of the present application, the etching gas may include Cl ₂ and N ₂ ; or Cl ₂ and BCl ₃ and N ₂ ; or Cl ₂ and BCl ₃ and N ₂ and CHF ₃ , the etching The gas can significantly reduce the hole density on the sidewall of the aluminum-containing metal material layer.

The sputtering deposition process of the aluminum-containing metal material layer will also affect the formation of holes in the aluminum-containing metal material layer, so by optimizing the parameters of the aluminum-containing metal material layer sputter deposition process, especially the sputter deposition process The temperature can further reduce the formation of holes. The inventors have found that an increase in the sputtering temperature can lead to the formation of more holes in the aluminum-containing metal material layer. Therefore, in some embodiments, the sputtering temperature of the aluminum-containing metal material layer is in the range of 350°C to 380°C, and preferably in the range of 360°C to 370°C. By performing the sputtering deposition process of the aluminum-containing metal material layer under the temperature conditions, the aluminum grains in the aluminum-containing metal material layer can maintain a relatively large particle size, which results in a relatively large specific surface area of the aluminum grains. Small. In this way, the time for C1 ₂ to pass between the aluminum grains is reduced, and the contact with the aluminum grains is also less, so the chances of the formation of Al Cl, Al F, etc. are reduced, thus reducing the size of the aluminum-containing metal material layer Possibility of hole formation. In a specific embodiment of the present application, an inert gas, such as Ar gas, is used as an auxiliary gas for the sputtering deposition process in the sputtering deposition process of the aluminum-containing metal material layer, and the sputtering power is, for example, 1kw to 2kw, such as 1.2 kw, 1.5kw, 1.8kw. Other process parameters in the sputtering deposition process of the aluminum-containing metal material layer can be selected from some known technologies in the prior art.

The present application also provides an aluminum interconnection structure, which is formed by using the method for forming the aluminum interconnection structure described in the embodiment of the present application.

The aluminum interconnection structure and its forming method described in the embodiments of the present application adjust the cleaning process of the deionized water, and clean the aluminum interconnection structure at a temperature of 25°C to 40°C, reducing the aluminum-containing Possibility of voids in the metallic material layer. Further, in the process of ashing the photoresist pattern, H ₂ O/O ₂ is used as the ashing gas; the sputtering deposition process of the aluminum-containing metal material layer is carried out in the range of 350°C to 380°C; In the process of etching the metal material layer, adjust the composition of the etching gas, add gases such as nitrogen or CHF ₃ , and adjust the flow rate of the etching gas, etching temperature, etc., to further reduce the production of the aluminum metal material layer. possibility of holes.

It should be noted that in practice, the above-mentioned optimized sorting is only applicable to some embodiments, but not all embodiments of the present disclosure. That is, in some other embodiments or situations, a certain factor with a lower influence or priority may be more important in reducing void formation than some high influence or priority factor. In addition, according to actual needs, one or more or all of the above optimization or modification steps can be implemented, and it or they can be performed independently or in combination with any other suitable methods or improvements.

Additionally, in some embodiments, one or more of the optimization measures described above are used to fabricate the aluminum interconnect structure. Compared with aluminum interconnect structures manufactured by conventional processes, the aluminum interconnect structures manufactured according to the present disclosure have significantly reduced void formation and lower void density, thereby improving the electrical connection performance and reliability of the aluminum interconnect structures.

To sum up, after reading this detailed disclosure, those skilled in the art can understand that the foregoing detailed disclosure may be presented by way of example only, and may not be restrictive. Although not explicitly stated herein, those skilled in the art will understand that this application is intended to cover various reasonable changes, improvements and modifications to the embodiments. Such alterations, improvements and modifications are intended to be suggested by this disclosure and are within the spirit and scope of the exemplary embodiments of this disclosure.

It should be understood that the term "and/or" used in this embodiment includes any or all combinations of one or more of the associated listed items. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present.

Similarly, it will be understood that when an element such as a layer, region or semiconductor substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. In contrast, the term "directly" means that there are no intervening elements. It should also be understood that the terms "comprising", "comprising", "including" and/or "comprising", when used herein, indicate the presence of the recited features, integers, steps, operations, elements and/or components, but It does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and/or groups thereof.

It will also be understood that although the terms first, second, third etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. Thus, a first element in some embodiments could be termed a second element in other embodiments without departing from the teachings of the present invention. The same reference numerals or the same reference designators denote the same elements throughout the specification.

Furthermore, exemplary embodiments are described by reference to cross-sectional illustrations and/or plan illustrations that are idealized exemplary illustrations. Accordingly, variations from the illustrated shapes as a result, for example, of manufacturing techniques and/or tolerances are to be expected. Thus, example embodiments should not be construed as limited to the shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an etched region illustrated as a rectangle will, typically, have rounded or curved features. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of example embodiments.

To sum up, after reading this detailed disclosure, those skilled in the art can understand that the foregoing detailed disclosure may be presented by way of example only, and may not be restrictive. Although not explicitly stated herein, those skilled in the art will understand that this application is intended to cover various reasonable changes, improvements and modifications to the embodiments. Such alterations, improvements and modifications are intended to be suggested by this disclosure and are within the scope of the exemplary embodiments of this disclosure.

Claims (10)

1. a kind of forming method of aluminium interconnection structure, comprising:

Semiconductor substrate is provided, the semiconductor substrate surface is sequentially formed with metal material layer and patterned mask layer, institute Stating metal material layer includes aluminium-containing metal material layer；

Etch the metal material layer；

Remove the patterned mask layer；

The aluminium interconnection structure is cleaned in 25 DEG C to 40 DEG C of temperature condition deionised waters.

2. the forming method of aluminium interconnection structure as described in claim 1, which is characterized in that remove the patterned mask layer Technique is cineration technics, wherein the gas for carrying out the cineration technics includes H₂O and O₂。

3. the forming method of aluminium interconnection structure as described in claim 1, which is characterized in that form institute using sputter deposition craft State aluminium-containing metal material layer, wherein the sputter deposition craft 350 DEG C to 380 DEG C at a temperature of carry out.

4. the forming method of aluminium interconnection structure as described in claim 1, which is characterized in that etch institute using dry etch process State metal material layer, wherein the etching gas of the dry etch process includes Cl₂, CCl₄And BCl₃One of or it is more Kind.

5. the forming method of aluminium interconnection structure as claimed in claim 4, which is characterized in that the etching of the dry etch process Gas further includes N₂And CHF₃One or more of.

6. the forming method of aluminium interconnection structure as claimed in claim 5, which is characterized in that the etching of the dry etch process Pressure range is from 8mt to 20mt.

7. the forming method of aluminium interconnection structure as claimed in claim 6, which is characterized in that the Cl₂Or CCl₄Or BCl₃ Range of flow from 30sccm to 50sccm, the N₂Or CHF₃Range of flow be 5sccm to 15sccm.

8. the forming method of aluminium interconnection structure as described in claim 1, which is characterized in that the aluminium-containing metal material layer is Made of Al-Cu alloy.

9. the forming method of aluminium interconnection structure as described in claim 1, which is characterized in that the metal material layer includes successively It is formed in the first barrier layer of the semiconductor substrate surface, aluminium-containing metal material layer and the second barrier layer.

10. a kind of aluminium interconnection structure, which is characterized in that formed using any one method in claim 1-9.