CN110120443B - A kind of preparation method of reverse polarity AlGaInP quaternary LED chip - Google Patents
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Abstract
本发明涉及一种反极性AlGaInP四元LED芯片的制备方法，包括：(1)在反极性AlGaInP四元LED外延片的P面上依次制备P面欧姆接触层、电流阻挡层；(2)键合到单晶导电Si衬底或蓝宝石衬底；(3)去除GaAs衬底、阻挡层，制备N面欧姆接触电极图形，包括规则分布且依次通过线状电极图形连接的若干小单元；(4)去除4个小单元与周围小单元电极图形连接的线状电极图形；(5)对4个小单元进行点测，根据客户需求组合若干个小单元电极图形，根据组合后电极图形大小去除不需要保留小单元电极图形之间的线状电极图形，对档率较高。
The invention relates to a preparation method of a reverse-polarity AlGaInP quaternary LED chip, comprising: (1) sequentially preparing a P-surface ohmic contact layer and a current blocking layer on the P-surface of a reverse-polarity AlGaInP quaternary LED epitaxial wafer; (2) ) is bonded to a single-crystal conductive Si substrate or a sapphire substrate; (3) remove the GaAs substrate and the barrier layer, and prepare an N-face ohmic contact electrode pattern, including several small units that are regularly distributed and connected in turn through the linear electrode pattern; (4) Remove the linear electrode patterns connecting the 4 small units with the electrode patterns of the surrounding small units; (5) Perform spot measurement on the 4 small units, combine several small unit electrode patterns according to customer requirements, and according to the size of the combined electrode patterns It is not necessary to remove the linear electrode patterns between the small unit electrode patterns, and the alignment rate is high.
Description
Technical Field
The invention relates to a preparation method of a reverse polarity AlGaInP quaternary LED chip, belonging to the technical field of photoelectrons.
Background
The LED is used as a new illumination light source in the 21 st century, and under the same brightness, the power consumption of a semiconductor lamp is only l/10 of that of a common incandescent lamp, but the service life of the semiconductor lamp can be prolonged by 100 times. The LED device is a cold light source, has high light efficiency, low working voltage, low power consumption and small volume, can be packaged in a plane, is easy to develop light and thin products, has firm structure and long service life, does not contain harmful substances such as mercury, lead and the like in the light source, does not have infrared and ultraviolet pollution, and does not generate pollution to the outside in production and use. Therefore, the semiconductor lamp has the characteristics of energy conservation, environmental protection, long service life and the like, and like the transistor replaces the electron tube, the semiconductor lamp replaces the traditional incandescent lamp and the traditional fluorescent lamp, and the trend is also great. From the viewpoint of saving electric energy, reducing greenhouse gas emission and reducing environmental pollution, the LED serving as a novel lighting source has great potential for replacing the traditional lighting source.
AlGaInP material system was originally used to fabricate visible light laser diodesFirst proposed by japanese researchers in the mid-eighties of the twentieth century. LED and LD devices of that time, typically using Ga matched to GaAs substrate0.5In0.5P is used as an active light emitting area, the light emitting wavelength is 650nm, and the light emitting diode is widely applied to quaternary laser pens, DVDs and players. Later, researchers found that introducing an Al component into GaInP could shorten the emission wavelength further, but if the Al content is too high, the emission efficiency of the device would be decreased sharply, because AlGaInP becomes an indirect bandgap semiconductor when the Al content in GaInP exceeds 0.53, so AlGaInP materials are generally used only to prepare LED devices with emission wavelengths above 570 nm. In 1997, AlGaInP-based LEDs of the first Multiple Quantum Well (MQW) composite bragg reflector (DBR) structure were produced in the world, and LED devices designed based on this structure still occupied a large share of the low-end market of LEDs to date.
The reverse polarity AlGaInP quaternary LED chip is widely applied to the field of high-power red LED display screens, the reverse polarity is used for replacing a substrate, a GaAs substrate with large light absorption is replaced by a single crystal conductive Si substrate or a sapphire substrate, and the like.
Chinese patent document CN104518056A discloses a method for preparing an AlGaInP red LED chip with reversed polarity, which comprises the following steps: (1) bonding a wafer of the GaAs substrate light-emitting diode and a silicon wafer together; (2) corroding the GaAs substrate, rotating the wafer 180 degrees along the vertical direction, and continuously corroding; (3) after the GaAs substrate is corroded, scraping the residual metal film layer on the edge of the wafer; (4) washing the surface of the wafer; etching the barrier layer on the surface of the wafer by using a sulfuric acid solution; (5) attaching a high-temperature-resistant adhesive tape strip with the area larger than that of the overlay register mark on the register mark of the wafer; (6) then carrying out evaporation on the N-type metal electrode, and corroding the window by using a window corrosive liquid; and obtaining a clear overlay register mark pattern after the etching is finished. In the patent, the relevant size is confirmed and then the operation is carried out, and the possibility of unstable process is higher due to the longer manufacturing process of the reversed polarity AlGaInP quaternary LED chip, and the final yield is slightly lower than the grade ratio.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides the preparation method of the reversed polarity AlGaInP quaternary LED chip, which is simple in process, capable of improving the output contrast ratio to a greater extent and stable.
The technical scheme of the invention is as follows:
a preparation method of a reverse polarity AlGaInP quaternary LED chip comprises the following steps:
(1) sequentially preparing a P-surface ohmic contact layer and a current blocking layer on the P surface of the reversed polarity AlGaInP quaternary LED epitaxial wafer; the reverse polarity AlGaInP quaternary LED epitaxial wafer sequentially comprises a GaAs substrate, a blocking layer, a light-tight epitaxial layer, an N-type AlGaInP layer and a reverse polarity quaternary LED epitaxial layer from bottom to top;
(2) bonding the epitaxial wafer generated in the step (1) to a single crystal conductive Si substrate or a sapphire substrate;
(3) removing the GaAs substrate and the barrier layer, and preparing an N-surface ohmic contact electrode pattern on the light-tight epitaxial layer, wherein the N-surface ohmic contact electrode pattern comprises a plurality of small units which are regularly distributed and are connected in sequence through a linear electrode pattern; the 4 small units are positioned on four intersection points of any two vertical diameters in the concentric circles and the concentric circles, and the concentric circles are concentric circles of the epitaxial wafer;
(4) removing the linear electrode patterns connected with the 4 small units and the surrounding small units;
(5) when the AlGaInP four-element LED chip is used, point measurement is carried out on the 4 small units, the point measurement data is used for calibrating customer requirements, the small units are combined according to the customer requirements, linear electrode patterns between the small units which do not need to be reserved are removed according to the combination requirements, and the reversed-polarity AlGaInP four-element LED chip with higher grade ratio is manufactured.
In the prior art, relevant sizes of all reverse polarity AlGaInP quaternary LED chips are confirmed and then operation is carried out, the possibility of unstable process is higher due to the longer manufacturing process of the reverse polarity AlGaInP quaternary LED chips, and the final output register ratio is lower.
Preferably, according to the invention, the diameter of the concentric circles is 1/2 that is the diameter of the epitaxial wafer.
According to a preferred embodiment of the present invention, the width of the line electrode pattern is 8 to 15 μm.
More preferably, the width of the line electrode pattern is 8 μm.
The selection of the width of the linear electrode pattern can not only realize the conduction of current, but also has small influence on the luminous efficiency of the chip due to small occupied area.
According to the invention, the distance between the centers of two adjacent small units is 80-150 μm.
Further preferably, the distance between the centers of two adjacent small units is 100 μm.
The distance between the centers of two adjacent small units can be selected according to the application requirements of customers and the actual size of a chip which cannot be applied, and the distance can be more applied by the combination of different small units.
Preferably, according to the present invention, the step (4) includes:
a. on the N-surface ohmic contact electrode pattern prepared in the step (3), coarsening and corroding a cutting groove are finished through conventional photoetching;
b. and removing the linear electrode patterns of the 4 small units connected with the surrounding small units by a conventional photoetching and metal corrosion method. According to the present invention, the width of the cutting groove (the distance between two adjacent small units) is preferably 8-15 μm.
The width value of the cutting groove does not influence subsequent cutting, and the occupied area is small and does not influence the light emitting efficiency of the chip.
According to a preferred embodiment of the present invention, in the step (3), an N-side ohmic contact electrode pattern is prepared on the light-impermeable epitaxial layer, and the method includes:
A. a GeAu film with the thickness of 1-1.8 mu m is vapor-plated on the light-tight epitaxial layer in an electron beam vapor plating mode; the GeAu film can better form N-surface ohmic contact; the thickness value of the GeAu film can ensure that the chip is applied to different fields, and the influence on the chip due to the current can be avoided.
B. Coating positive photoresist on the surface of the GeAu film;
C. preparing an N-surface ohmic contact electrode pattern on the surface of the positive photoresist through photoetching;
D. and removing the positive photoresist to obtain the photoresist.
Preferably, in the step B, a positive photoresist with a thickness of 2-3.6 μm is coated on the surface of the GeAu film.
The invention has the beneficial effects that:
1. the small units connected are manufactured, photoelectric parameters of the small units are measured through points, and the small units are combined according to customer requirements, so that the gear ratio of the whole chip is greatly improved, and the reversed polarity AlGaInP quaternary LED chip with higher gear ratio is obtained.
2. The method is simple and convenient to operate, can obtain higher chip matching rate, and is suitable for large-scale production.
Drawings
FIG. 1 is a first illustration of a reverse polarity AlGaInP quaternary LED chip manufactured by the present invention;
FIG. 2 is a second illustration of a reverse AlGaInP quaternary LED chip manufactured by the present invention;
FIG. 3 is a schematic view of the removed linear electrode pattern obtained in step (4) of the present invention;
Detailed Description
The invention is further defined in the following, but not limited to, the figures and examples in the description.
Example 1
A preparation method of a reverse polarity AlGaInP quaternary LED chip comprises the following steps:
(1) sequentially preparing a P-surface ohmic contact layer and a current blocking layer on the P surface of the reversed-polarity AlGaInP quaternary LED epitaxial wafer by a conventional method; the reverse polarity AlGaInP quaternary LED epitaxial wafer sequentially comprises a GaAs substrate, a blocking layer GaInP, a light-tight epitaxial layer, an N-type AlGaInP layer and a reverse polarity quaternary LED epitaxial layer from bottom to top;
(2) bonding the epitaxial wafer generated in the step (1) to a single crystal conductive Si substrate or a sapphire substrate by a conventional bonding process;
(3) corroding and removing the GaAs substrate by using a conventional GaAs substrate corrosive liquid, corroding a barrier layer GaInP grown in an epitaxial mode by using a conventional GaInP corrosive liquid, and preparing an N-surface ohmic contact electrode pattern on the light-tight epitaxial layer, wherein the N-surface ohmic contact electrode pattern comprises a plurality of small units which are regularly distributed and are connected in sequence through a linear electrode pattern; the 4 small units are positioned on four intersection points of any two vertical diameters in the concentric circles and the concentric circles, and the concentric circles are concentric circles of the epitaxial wafer; the diameter of the concentric circles is 1/2 for the diameter of the epitaxial wafer. The method comprises the following steps:
A. a GeAu film with the thickness of 1-1.8 mu m is vapor-plated on the light-tight epitaxial layer in an electron beam vapor plating mode; the GeAu film can better form N-surface ohmic contact; the thickness value of the GeAu film can ensure that the chip is applied to different fields, and the influence on the chip due to the current can be avoided.
B. Coating a positive photoresist with the thickness of 2-3.6 mu m on the surface of the GeAu film;
C. preparing an N-surface ohmic contact electrode pattern on the surface of the positive photoresist through photoetching;
D. and removing the positive photoresist to obtain the photoresist. As shown in fig. 1 and 2.
(4) Removing the linear electrode patterns of the 4 small units connected with the surrounding small units; the method comprises the following steps:
a. on the N-surface ohmic contact electrode pattern prepared in the step (3), coarsening and corroding a cutting groove are finished through conventional photoetching;
b. and removing the linear electrode patterns of the 4 small units connected with the surrounding small units by a conventional photoetching and metal corrosion method. As shown in fig. 3.
(5) When the AlGaInP four-element LED chip is used, point measurement is carried out on 4 small units, the requirements of clients are met through point measurement data, a plurality of small units are combined according to the requirements of the clients, linear electrode patterns between the small units which do not need to be reserved are removed according to the combination requirements, and the AlGaInP four-element LED chip with high grade ratio and reversed polarity is manufactured.
Various parameters of the reversed polarity AlGaInP quaternary LED chips with different combinations are obtained and are shown in the table 1.
TABLE 1
| Small unit period (mum) | Point measuring luminous intensity (mcd) | Small power combination (size) | Medium power combination (one) | High power combination (one) |
| 80 | 70-80 | 2 or 3 | 4*4 | 10*10 |
| 100 | 100-110 | 2 or 3, 4 | 3*3、4*4、3*4 | 7*8、8*8、8*9 |
Example 2
The method for preparing the AlGaInP quaternary LED chip with reversed polarity in the embodiment 1 is characterized in that the interval period between the centers of two adjacent small units is 80-150 μm. The width of the line electrode pattern is 8-15 μm.
Comparative example 1
The preparation method of the reversed polarity AlGaInP quaternary LED chip in the prior art comprises the following steps:
(1) confirming the size of a reversed polarity AlGaInP quaternary LED chip according to market demands, putting a reversed polarity AlGaInP quaternary LED epitaxial wafer according to the demands, and sequentially preparing a P-surface ohmic contact layer and a current blocking layer on the P surface of the reversed polarity AlGaInP quaternary LED epitaxial wafer by a conventional method; the reverse polarity AlGaInP quaternary LED epitaxial wafer sequentially comprises a GaAs substrate, a blocking layer GaInP, a light-tight epitaxial layer, an N-type AlGaInP layer and a reverse polarity quaternary LED epitaxial layer from bottom to top;
(2) bonding the epitaxial wafer generated in the step (1) to a single crystal conductive Si substrate or a sapphire substrate by a conventional bonding process;
(3) corroding and removing the GaAs substrate by using a conventional GaAs substrate corrosive liquid, corroding and removing the epitaxially grown barrier layer GaInP by using a conventional GaInP corrosive liquid, and preparing an N-surface ohmic contact electrode pattern on the light-tight epitaxial layer; the size of the electrode pattern of the N-side ohmic contact layer is confirmed in the step (1).
(4) On the N-surface ohmic contact electrode pattern prepared in the step (3), coarsening and corroding cutting grooves are completed through conventional photoetching, and at the moment, the reversed polarity AlGaInP quaternary LED epitaxial wafer is divided into reversed polarity AlGaInP quaternary LED chips with the sizes confirmed in the step (1) by the cutting grooves;
(5) and (4) carrying out point measurement on the reversed polarity AlGaInP quaternary LED chip prepared in the step (4), sorting the chip according to point measurement data and a file requirement, and selling the gears meeting the market requirement in a non-conforming temporary storage factory.
The shift rate and the time spent by the reversed polarity AlGaInP quaternary LED chip obtained in example 1 and the reversed polarity AlGaInP quaternary LED chip obtained in comparative example 1 are shown in table 2, as requested by the customer:
TABLE 2
Claims (9)
1. A preparation method of a reverse polarity AlGaInP quaternary LED chip is characterized by comprising the following steps:
(1) sequentially preparing a P-surface ohmic contact layer and a current blocking layer on the P surface of the reversed polarity AlGaInP quaternary LED epitaxial wafer; the reverse polarity AlGaInP quaternary LED epitaxial wafer sequentially comprises a GaAs substrate, a blocking layer, a light-tight epitaxial layer, an N-type AlGaInP layer and a reverse polarity quaternary LED epitaxial layer from bottom to top;
(2) bonding the epitaxial wafer generated in the step (1) to a single crystal conductive Si substrate or a sapphire substrate;
(3) removing the GaAs substrate and the barrier layer, and preparing an N-surface ohmic contact electrode pattern on the light-tight epitaxial layer, wherein the N-surface ohmic contact electrode pattern comprises a plurality of small units which are regularly distributed and are connected in sequence through a linear electrode pattern; the 4 small units are positioned on four intersection points of any two vertical diameters in the concentric circles and the concentric circles, and the concentric circles are concentric circles of the epitaxial wafer; the diameter of the concentric circles is 1/2 of the epitaxial wafer;
(4) removing the linear electrode patterns connected with the 4 small units and the surrounding small units;
(5) when the AlGaInP four-element LED chip is used, point measurement is carried out on the 4 small units, the point measurement data is used for marking customer requirements, a plurality of small units are combined according to the customer requirements, linear electrode patterns between the small units which do not need to be reserved are removed according to the combination requirements, and the AlGaInP four-element LED chip with reversed polarity is manufactured.
2. The method as claimed in claim 1, wherein the width of the line electrode pattern is 8-15 μm.
3. The method as claimed in claim 1, wherein the width of the line electrode pattern is 8 μm.
4. The method as claimed in claim 1, wherein the distance between the centers of two adjacent small units is 80-150 μm.
5. The method as claimed in claim 1, wherein the distance between the centers of two adjacent small units is 100 μm.
6. The method for preparing a reverse polarity AlGaInP quaternary LED chip as claimed in claim 1, wherein the step (4) comprises:
a. on the N-surface ohmic contact electrode pattern prepared in the step (3), coarsening and corroding a cutting groove are finished through photoetching;
b. and removing the linear electrode patterns connected with the 4 small units and the surrounding small units by photoetching and metal corrosion methods.
7. The method as claimed in claim 6, wherein the width of the cutting groove is 8-15 μm.
8. The method as claimed in any one of claims 1 to 7, wherein the step (3) of forming an N-plane ohmic contact electrode pattern on the opaque epitaxial layer comprises:
A. a GeAu film with the thickness of 1-1.8 mu m is vapor-plated on the light-tight epitaxial layer in an electron beam vapor plating mode;
B. coating positive photoresist on the surface of the GeAu film;
C. preparing an N-surface ohmic contact electrode pattern on the surface of the positive photoresist through photoetching;
D. and removing the positive photoresist to obtain the photoresist.
9. The method as claimed in claim 8, wherein in step B, a positive photoresist with a thickness of 2-3.6 μm is coated on the surface of the GeAu film.
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