CN119968006A

CN119968006A - A perovskite battery component and preparation method thereof

Info

Publication number: CN119968006A
Application number: CN202510004588.6A
Authority: CN
Inventors: 请求不公布姓名
Original assignee: Shenzhen Guangyin Technology Co ltd
Current assignee: Shenzhen Guangyin Technology Co ltd
Priority date: 2025-01-02
Filing date: 2025-01-02
Publication date: 2025-05-09

Abstract

The invention provides a perovskite battery component and a preparation method thereof. The perovskite battery assembly comprises a light-transmitting substrate, a plurality of insulating pieces and a plurality of sub-batteries connected in series, wherein each sub-battery comprises a light-transmitting electrode layer, a first carrier transmission layer, a perovskite layer, a second carrier transmission layer and a conductive electrode layer which are sequentially stacked, the polarities of carriers transmitted by the first carrier transmission layer and the second carrier transmission layer are opposite, the light-transmitting substrate is provided with the light-transmitting electrode layers of the sub-batteries, the insulating pieces are arranged between the light-transmitting electrode layers of two adjacent sub-batteries, and the insulating pieces are used for insulating the light-transmitting electrode layers of the two adjacent sub-batteries. The perovskite battery component can solve the problem that the film forming quality is poor due to the fact that a completely covered film is not easy to form at the P1 scribing position.

Description

Perovskite battery component and preparation method thereof

Technical Field

The invention belongs to the field of perovskite batteries, and relates to a perovskite battery component and a preparation method thereof.

Background

The perovskite solar cell module is characterized in that a circuit structure in a perovskite cell is formed through 3 laser working procedures (P1, P2 and P3) (see figure 1), the perovskite cell is divided into a module formed by connecting a plurality of subcells in series, a TCO transparent electrode layer is divided into independent strip-shaped sub-electrodes by P1 laser, a channel (HTL or ETL layer)/perovskite layer (PVK)/(ETL or HTL layer) with upper and lower electrodes connected in series is formed by P2 laser, the upper electrode layer is connected in series with the TCO transparent electrode layer through a P2 laser channel, and the P3 laser is used for removing the upper electrode layer/(HTL or ETL layer)/perovskite layer (PVK)/(ETL or HTL layer) of adjacent subcells connected in series to form the circuit structure with the subcells connected in series. However, when the TCO film layer is cut off by the P1 laser to form a step, the thickness of the upper Hole Transport Layer (HTL) or the Electron Transport Layer (ETL) film layer is 5-40 nm because the thickness of the current TCO film layer is 300-700 nm, and the film is difficult to form a completely covered film at the step, so that the film forming quality of the subsequent PVK layer is affected, and the perovskite film layer at the P1 scribing position is decomposed due to poor crystal quality, so that the service life is shortened.

Disclosure of Invention

The invention mainly provides a perovskite battery component and a preparation method thereof, and aims to solve the problem that a film is difficult to form at a scribing position of a perovskite battery component P1 so as to cause poor film forming quality.

In order to achieve the above purpose, the invention is realized by adopting the following technical scheme:

the invention provides a perovskite battery component, which comprises a light-transmitting substrate, a plurality of insulating pieces and a plurality of serially connected sub-batteries, wherein each sub-battery comprises a light-transmitting electrode layer, a first carrier transmission layer, a perovskite layer, a second carrier transmission layer and a conductive electrode layer which are sequentially stacked, the polarities of carriers transmitted by the first carrier transmission layer and the second carrier transmission layer are opposite, and the perovskite battery component comprises:

the transparent substrate is provided with transparent electrode layers of all the sub-cells, insulating pieces are arranged between the transparent electrode layers of two adjacent sub-cells, and the insulating pieces are used for insulating the transparent electrode layers of the two adjacent sub-cells.

Optionally, P3 scribing grooves are formed between two adjacent sub-cells, the P3 scribing grooves are etched from the conductive electrode layer to the first carrier transmission layer, and the bottoms of the P3 scribing grooves are exposed out of the light-transmitting electrode layer;

The perovskite battery assembly further comprises a plurality of conductive pieces, wherein the conductive pieces are arranged between every two adjacent sub-batteries, and the conductive pieces are positioned between the P3 scribing grooves and the insulating pieces;

In any two adjacent sub-cells, a first end of the conductive member contacts the conductive electrode layer of a first one of the sub-cells, and a second end of the conductive member contacts the light-transmitting electrode layer of a second one of the sub-cells.

Optionally, the conductive member is in contact with the insulating member, and the height of the light-transmitting electrode layer is the same as the height of the insulating member.

Optionally, the height of the contact part of the conductive element and the insulating element is defined as H2, and the height of the light-transmitting electrode layer is H1, wherein H2 is 40% -60% of H1.

Optionally, the height H2 is 50% of the height H1.

Optionally, the material of the light-transmitting electrode layer is fluorine-doped tin dioxide film layer material or indium tin oxide film layer material, and the maximum height of the light-transmitting electrode layer is 300-700 nm;

And/or the material of the conductive member comprises one or more of aluminum alloy, silver alloy, copper alloy, magnesium alloy, gold metal, nickel metal and titanium metal, the height of the conductive member is 500-800 nm, the width of the conductive member is 5-10 um, and the material of the conductive electrode layer is Cu or Ag or ITO/Ag or IZO/Ag.

Optionally, the insulating part is made of an inorganic insulating gate material or an organic insulating gate material, wherein the inorganic insulating gate material is SiOx, siNx, siC, al ₂O₃ or ZnO, the organic insulating gate material is acrylic, polyimide, epoxy resin or polyester, the height of the insulating part is 200-600 nm, and the width of the insulating part is 5-10 um;

And/or the perovskite layer is made of FAPbI _xCl_(1-x).

Optionally, a lower passivation layer is arranged between the first carrier transmission layer and the perovskite layer, and an upper passivation layer is arranged between the second carrier transmission layer and the perovskite layer;

When the perovskite battery component is a trans-type p-i-n device, the first carrier transmission layer is a hole transmission layer, and the material of the lower passivation layer comprises one or more of KCl, naCl, znO;

When the perovskite battery component is a formal n-i-p device, the first carrier transmission layer is an electron transmission layer, the lower passivation layer is a self-assembled molecular layer, the upper passivation layer is made of iodized phenethylamine, and the second carrier transmission layer is a hole transmission layer.

The invention also provides a preparation method of the perovskite battery component, when the perovskite battery component is a formal n-i-p device, the preparation method comprises the following steps:

(1) Selecting TCO conductive glass as a substrate, wherein the substrate comprises a light-transmitting substrate and a TCO conductive film from bottom to top;

(2) Forming a plurality of step-shaped light-transmitting electrode layers with P1.1 grooves on TCO conductive glass by adopting a wet etching process or a laser etching process, wherein the P1 grooves are arranged among the light-transmitting electrode layers;

When the laser etching process is adopted, a P1 laser scribing and a P1.1 laser scribing are respectively or simultaneously carried out on the TCO conductive glass, and a P1.1 laser etching area is adjacent to the P1 laser etching area, wherein the P1 laser etches the TCO conductive film until the transparent substrate is exposed, and the P1.1 laser etches 40-60% of the total thickness of the TCO conductive film to form a P1.1 scribing groove adjacent to the P1 scribing groove;

When a wet etching process is adopted, P1 wet etching and P1.1 wet etching are respectively or simultaneously carried out on TCO conductive glass, and a P1.1 laser etching area is adjacent to a P1 laser etching area, wherein the P1 wet etching TCO conductive film is exposed until a light-transmitting substrate is exposed, and the P1.1 wet etching TCO conductive film is 40-60% of the total thickness to form a P1.1 etching groove adjacent to a P1 scribing groove;

(3) Filling an insulating material in the P1 scribing groove to form an insulating part, so that the maximum heights of the insulating part and the light-transmitting electrode layer are the same;

(5) Filling conductive materials on the P1.1 scribing groove to form a conductive piece protruding out of the light-transmitting electrode layer;

(6) Preparing a combined layer on the light-transmitting electrode layer and the insulating piece, wherein the combined layer comprises a first carrier transmission layer, a lower passivation layer, a perovskite layer, an upper passivation layer and a second carrier transmission layer which are sequentially prepared;

(7) Preparing a conductive electrode layer on the second carrier transport layer and the conductive member;

(8) And then carrying out P3 laser scribing, namely scribing the first carrier transmission layer from the conductive electrode layer to the combined layer until the transparent electrode layers are exposed, so that a P3 scribing groove is formed on each transparent electrode layer, and thus the solar perovskite battery component is obtained.

A method of making a perovskite battery cell assembly that is a trans p-i-n device, the method comprising the steps of:

(2) P1 laser scribing and P1.1 laser scribing are respectively or simultaneously carried out on TCO conductive glass, a P1.1 laser etching area is adjacent to the P1 laser etching area, a plurality of step-shaped transparent electrode layers with P1.1 scribing grooves are formed, and P1 scribing grooves are formed among the plurality of transparent electrode layers, wherein the P1 laser etches the TCO conductive film until the transparent substrate is exposed, and the P1.1 laser etches 40-60% of the total thickness of the TCO conductive film to form the P1.1 scribing grooves adjacent to the P1 scribing grooves;

(6) Preparing a combined layer on the light-transmitting electrode layer and the insulating piece, wherein the combined layer comprises a first carrier transmission layer, a lower passivation layer, a perovskite layer and a second carrier transmission layer which are sequentially prepared, and the upper surface of the second carrier transmission layer is controlled to be flush with the upper surface of the conductive piece;

Compared with the prior art, the invention has the following advantages:

According to the perovskite battery component, the insulating pieces are arranged between the light-transmitting electrode layers of the two adjacent sub-batteries, namely, the insulating pieces are filled in the grooves at the positions of the P1 scribing lines, so that the bottoms of the grooves are raised or the grooves are eliminated, the first carrier transmission layer forms a film which is covered completely easily at the positions of the P1 scribing lines, the influence of the grooves formed by the P1 scribing lines on the film forming quality of the subsequent perovskite layer can be reduced, the film forming quality of the perovskite battery component can be improved, and the service life of the perovskite battery component can be prolonged. In addition, in the prior art, in order to achieve insulation between sub-cells, the distance between the light-transmitting electrode layers of two adjacent sub-cells is increased, resulting in an increase in dead zone width. Compared with the prior art, the perovskite battery component can reduce the distance between the light-transmitting electrode layers of the adjacent two sub-batteries, thereby reducing the dead zone width and further improving the photoelectric conversion efficiency of the perovskite battery component.

Drawings

FIG. 1 is a schematic structural view of a prior art perovskite battery assembly;

fig. 2 is a schematic structural view of a perovskite battery assembly of example 1;

FIG. 3 is a schematic illustration of the process of the perovskite cell assembly of example 1;

Fig. 4 is a schematic structural view of a perovskite battery assembly of example 2;

fig. 5 is a schematic diagram of a process of forming a P1 trench and a P2 trench by wet etching.

Legend description:

10. TCO conductive glass, 101, a light-transmitting substrate, 102, a light-transmitting electrode layer, 201, an insulating part, 301, a conductive part, 40, a combined layer, 401, a first carrier transmission layer, 402, a lower passivation layer, 403, a perovskite layer, 404, an upper passivation layer, 405, a second carrier transmission layer, 501, a P3 scribing groove, 601, a conductive electrode layer, H1, the height of the light-transmitting electrode layer and the height of the contact part of the H2, the conductive part and the insulating part.

Detailed Description

In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.

In the perovskite solar cell module, a circuit structure in a perovskite cell is formed through 3 laser procedures (P1, P2 and P3) (see figure 1), the perovskite cell is divided into a module formed by connecting a plurality of subcells in series, a TCO transparent electrode layer is divided into independent strip-shaped sub-electrodes by P1 laser, a channel (HTL or ETL layer)/perovskite layer 403 (PVK)/(ETL or HTL layer) formed by connecting an upper electrode and a lower electrode in series is formed (the upper electrode layer is connected with the TCO transparent electrode layer in series through a P2 laser channel), and P3 laser is used for removing an upper electrode layer/(HTL or ETL layer)/perovskite layer 403 (PVK)/(ETL or HTL layer) of adjacent subcells in series to form the circuit structure formed by connecting subcells in series. However, when the TCO film layer is cut off by the P1 laser to form a step, the thickness of the upper Hole Transport Layer (HTL) or the Electron Transport Layer (ETL) film layer is 5-40 nm because the thickness of the current TCO film layer is 300-700 nm, and the film is difficult to form a completely covered film at the step, so that the film forming quality of the subsequent PVK layer is affected, and the perovskite film layer at the P1 scribing position is decomposed due to poor crystal quality, so that the service life is shortened.

At the P1 scribing position, due to the difference of the thickness of the upper film layer and the lower film layer caused by the step, larger voltage can be generated in the discharging process of the perovskite battery component, the perovskite film layer is easy to lose efficacy, and the service life of the component is seriously reduced. In order to achieve complete insulation between subcells, the P1 scribe width needs to be >20um, reducing the photoelectric conversion efficiency of the perovskite solar module.

In summary, perovskite solar cell modules in the prior art have a series of problems in terms of laser processes, such as poor film quality due to steps, film failure due to voltage increase, and reduction in photoelectric conversion efficiency due to increased dead area.

The application provides a perovskite battery component, which aims to solve the problem that a film is difficult to form at a P1 scribing position so as to cause poor film forming quality.

The specific structure of the perovskite battery assembly of the present application will be described below:

Referring to fig. 2 in combination, in one possible embodiment of the present application, a perovskite battery assembly includes a light transmissive substrate 101, a plurality of insulators 201, and a plurality of sub-cells connected in series, each sub-cell including a light transmissive electrode layer 102, a first carrier transport layer 401, a perovskite layer 403, a second carrier transport layer 405, and a conductive electrode layer 601, which are stacked in this order. The light transmissive substrate 101 may be made of glass, PET (polyethylene terephthalate ), or other effective light transmissive materials.

The opposite polarity of the carriers transported by the first carrier transporting layer 401 and the second carrier transporting layer 405 means that the carriers transported by the first carrier transporting layer 401 and the carriers transported by the second carrier transporting layer 405 have opposite polarities. For example, if the first carrier transport layer 401 transports electrons, the second carrier transport layer 405 transports holes. If the first carrier transport layer 401 transports holes, the second carrier transport layer 405 transports electrons.

Wherein, the transparent substrate 101 is provided with the transparent electrode layer 102 of each sub-cell, and an insulating member 201 is disposed between the transparent electrode layers 102 of two adjacent sub-cells, and the insulating member 201 is used for insulating the transparent electrode layers 102 of two adjacent sub-cells.

As can be appreciated, the insulating pieces 201 are respectively disposed between the transparent electrode layers 102 of two adjacent sub-cells, that is, the insulating pieces 201 are filled in the grooves at the positions of the P1 scribe lines, so that the bottoms of the grooves are raised or the grooves are eliminated, and the first carrier transmission layer 401 forms a film with complete coverage at the positions of the P1 scribe lines relatively easily, so that the influence of the grooves formed by the P1 scribe lines on the film forming quality of the subsequent perovskite layer 403 can be reduced, the film forming quality of the perovskite cell assembly can be improved, and the service life of the perovskite cell assembly can be further prolonged. In addition, in the related art, in order to achieve insulation between sub-cells, the distance between the light-transmitting electrode layers 102 of two adjacent sub-cells is increased, resulting in an increase in dead zone width. Compared with the prior art, the perovskite battery component can reduce the distance between the light-transmitting electrode layers 102 of two adjacent sub-batteries, thereby reducing the dead zone width and further improving the photoelectric conversion efficiency of the perovskite battery component.

Referring to fig. 2 in combination, in one possible embodiment of the present application, P3 scribe lines 501 are disposed between two adjacent sub-cells, the P3 scribe lines 501 are etched from the conductive electrode layer 601 to the first carrier transport layer 401, and the bottom of the P3 scribe lines 501 exposes the transparent electrode layer 102. The perovskite battery assembly further comprises a plurality of conductive pieces 301, wherein the conductive pieces 301 are arranged between two adjacent subcells, and the conductive pieces 301 are positioned between the P3 scribe line 501 and the insulating piece 201. In any two adjacent subcells, a first end of the conductive member 301 contacts the conductive electrode layer 601 of the first subcell and a second end of the conductive member 301 contacts the light transmissive electrode layer 102 of the second subcell.

It can be appreciated that, in two adjacent sub-cells, the conductive electrode layer 601 of the first sub-cell is electrically connected with the light-transmitting electrode layer 102 of the second sub-cell through the conductive member 301, so that the contact resistance can be reduced and the stability of the series connection of the sub-cells can be improved.

In the prior art, the precision of laser scribing and the heat affected zone are required to be considered simultaneously, and a distance of 10-20 um is required between the P1 and the P2 scribing, so that the dead zone area of the perovskite battery component is increased, and the width of the dead zone of the perovskite component caused by the laser scribing process is about 150-200 um.

Referring to fig. 2 in combination, in one possible embodiment of the present application, a conductive member 301 is in contact with an insulating member 201. Specifically, the P1 scribe line forms a groove in which the insulator 201 is mounted, and the P1.1 scribe line forms a groove in which the conductive member 301 is mounted. The electrical component is in contact with the insulating component 201, which means that the groove of the P1 scribe line is connected with the groove of the P1.1 scribe line, so that a safe interval of laser scribe line is not required to be set, thereby reducing the dead area and improving the conversion efficiency of the perovskite component.

The height of the light-transmitting electrode layer 102 is the same as the height of the insulator 201. By the arrangement, the insulating piece 201 can completely fill the groove formed by the P1 scribing, so that the influence of the groove on subsequent film forming can be eliminated, the film forming quality of the perovskite battery component can be improved, and the service life of the perovskite battery component can be prolonged.

Referring to fig. 2 in combination, in one possible embodiment of the present application, the height of the contact portion between the conductive element 301 and the insulating element 201 is defined as H2, and the height of the transparent electrode layer 102 is defined as H1, where H2 is 40% -60% of H1. The height H2 is greater than or equal to 40% of H1, and the conductive member 301 can be sufficiently contacted with the light-transmitting electrode layer 102, thereby ensuring the reliability of the conduction. The height H2 is less than or equal to 60% of H1, a sufficient safety distance can be reserved for laser scribing the groove P1.1 forming the mounting conductive member 301, and the penetration of the P1.1 laser scribing through the light transmissive electrode layer 102 can be prevented. The height H2 may be 40%, 45%, 50%, 55%, 60% of the height H1, or the like.

Referring to fig. 2 in combination, in one possible embodiment of the application, the height H2 is 50% of the height H1. By the arrangement, the conductive member 301 and the transparent electrode layer 102 can be in relatively sufficient contact, and a sufficient safety distance can be reserved for the P1.1 laser scribing.

In one possible embodiment of the application, referring to fig. 2, the perovskite cell assembly is a trans-P-i-n device comprising a light transmissive substrate 101, a light transmissive electrode layer 102, an insulating member 201, a conductive member 301, a combination layer 40, a P3 scribe line 501 and a conductive electrode layer 601, wherein:

a light-transmitting substrate 101 on which a plurality of light-transmitting electrode layers 102 are provided;

an insulating member 201 filled between adjacent light-transmitting electrode layers 102;

The conductive member 301 is disposed on the transparent electrode layer 102 and contacts the insulating member 201, wherein the height H2 of the contact portion between the conductive member 301 and the insulating member 201 is 50% of the maximum height H1 of the contact portion between the transparent electrode layer 102 and the insulating member 201, and the maximum height of the transparent electrode layer 102 and the height of the insulating member 201 are equal to H1;

The combined layer 40 is arranged above the light-transmitting electrode layer 102 and the insulating piece 201, and the combined layer 40 sequentially comprises a first carrier transmission layer 401, a lower passivation layer 402, a perovskite layer 403 and a second carrier transmission layer 405 from bottom to top;

a conductive electrode layer 601 disposed above the conductive member 301 and the second carrier transporting layer 405, and the upper surface of the conductive member 301 is level with the upper surface of the second carrier transporting layer 405;

the P3 scribe line 501 is etched from the conductive electrode layer 601 to the first carrier transport layer 401 of the combination layer 40, and the bottom of the P3 scribe line 501 exposes the transparent electrode layers 102, and one P3 scribe line 501 is formed on each transparent electrode layer 102.

Referring to fig. 3, the method for manufacturing the perovskite battery assembly includes:

1) Preparing TCO conductive glass 10, namely selecting FTO glass as TCO conductive glass 1010, and cleaning, drying and carrying out ozone treatment for later use, wherein the drying process is 100 ℃ for 5min, and the ozone treatment is carried out for 15min. The FTO glass comprises a light transmissive substrate 101 and an FTO film layer from bottom to top.

2) P1 laser scribing and P1.1 laser scribing are carried out, wherein a P1.1 laser etching area is closely adjacent to the P1 laser etching area, a plurality of step-shaped transparent electrode layers 102 with P1.1 scribing grooves are formed, P1 scribing grooves are formed among the plurality of transparent electrode layers 102, the P1 laser and the P1.1 laser adopt red light picosecond laser, the laser wavelength of the P1 laser is 1064nm, the width of the P1 scribing groove is 10um, the P1 scribing groove needs to scribe the FTO film layer until the transparent substrate 101 is exposed, the width of the P1.1 scribing groove is 10um, and the depth of the P1.1 scribing groove is half of the total thickness of the FTO film layer.

3) And preparing an insulating part 201 at the P1 groove, namely preparing the insulating part 201 made of an organic insulating gate material at the P1 groove by utilizing a vacuum evaporation process, wherein the height is 300nm, the width is 10um, and the material is acrylic.

4) The conductive piece 301 is prepared at the P1.1 scribing groove, namely the conductive piece 301 made of silver alloy material is prepared at the P1.1 scribing groove by utilizing a PVD magnetron sputtering process, the height of the conductive piece 301 is 700nm, the width of the conductive piece is 10um, and the conductive piece 301 protrudes out of the light-transmitting electrode layer 102.

5) The first carrier transport layer 401 is prepared on the insulating member 201 and the transparent electrode layer 102, namely, the first carrier transport layer 401 is prepared on the insulating member 201 and the transparent electrode layer 102 by utilizing a PVD magnetron sputtering process, specifically, the NiO _x hole transport layer is an RF 1000W hole transport layer, a metal mask plate is used in the process to realize the required prepared conductive grid pattern, and the thickness of the film layer is 10-20 nm.

6) The lower passivation layer 402 is prepared on the first carrier transport layer 401 by a slit coating process, specifically, a SAM layer is prepared on the first carrier transport layer 401, wherein the SAM material is Me-4PACz, and the solvent is ethanol.

7) Perovskite layer 403 is prepared on the lower passivation layer 402. Perovskite layer 403 (PVK) is prepared on the lower passivation layer 402 using a slot coating process, the perovskite material being FAPbI _xCl_(1-x), in a mixed system of PbI/CsI/RbCl/PbBr/MAI FAI/MACl materials.

8) A second carrier transport layer 405 is fabricated on the perovskite layer 403, specifically, a C60 and SnO ₂ Electron Transport Layer (ETL) are deposited by a vacuum evaporation process and an ALD process, respectively, during which a metal mask is used to achieve the desired fabricated conductive gate pattern, and preferably the upper surface of the ETL layer is controlled to be flush with the upper surface of the conductive element 301.

9) An electrically conductive electrode layer 601 is formed on the second carrier transport layer 405 and the electrically conductive member 301. On the ETL and the electrically conductive member 301, an electrically conductive electrode layer 601 (specifically, an ITO and Ag composite electrode layer) is formed by PVD magnetron sputtering, and the lower layer thereof is overlapped with the electrically conductive member 301, wherein the ITO is sputtered by a DC power supply, and the Ag is sputtered by a DC power supply.

10 P3 laser scribing is performed from the conductive electrode layer 601 to the first carrier transmission layer 401 of the combined layer 40 until the conductive electrode layer 601 is exposed, after sputtering the conductive electrode layer 102, a P3 laser process is performed again, from the conductive electrode layer 601 to the first carrier transmission layer 401 of the combined layer 40 until the transparent electrode layer 102 is exposed, so that a P3 scribing groove 501 is formed on each transparent electrode layer 102, the perovskite solar cell module is divided into a plurality of serial sub-cell structures, and picosecond green light is used as laser with the wavelength of 355nm.

11 And (3) removing the film layer at the edge of the perovskite battery component by laser, namely finally, performing a P4 laser process to remove the film layer at the edge of the perovskite battery component, wherein the laser is selected as green light with the wavelength of 1064nm picoseconds.

In one possible embodiment of the present application, referring to fig. 4, the present application provides a perovskite battery assembly, which is a formal n-i-P device, comprising a light-transmitting substrate 101, a light-transmitting electrode layer 102, an insulating member 201, a conductive member 301, a combination layer 40, a P3 scribe line 501, and a conductive electrode layer 601, wherein:

The conductive member 301 is disposed on the transparent electrode layer 102 and contacts the insulating member 201, wherein the height H2 of the contact portion between the conductive member 301 and the insulating member 201 is 50% of the height H1 of the transparent electrode layer 102, and the maximum height of the transparent electrode layer 102 and the height of the insulating member 201 are equal to H1;

The combined layer 40 is arranged above the light-transmitting electrode layer 102 and the insulating piece 201, and the combined layer 40 sequentially comprises a first carrier transmission layer 401, a lower passivation layer 402, a perovskite layer 403, an upper passivation layer 404 and a second carrier transmission layer 405 from bottom to top;

A conductive electrode layer 601 disposed above the conductive member 301 and the second carrier transport layer 405, preferably, the upper surface of the conductive member 301 is flush with the upper surface of the second carrier transport layer 405;

The preparation method of the perovskite battery component comprises the following steps:

1) ITO glass is selected as TCO conductive glass 1010, and is cleaned, dried and subjected to ozone treatment for later use, wherein the drying process is 100 ℃ for 5min and the ozone treatment is 15min. The ITO glass includes a light-transmitting substrate 101 and an ITO film layer from bottom to top.

2) P1 laser scribing and P1.1 laser scribing are carried out, the P1.1 laser etching area is closely adjacent to the P1 laser etching area, a plurality of step-shaped transparent electrode layers 102 with P1.1 scribing grooves are formed, P1 scribing grooves are formed among the plurality of transparent electrode layers 102, wherein P1 laser and P1.1 laser adopt red light picosecond laser, the laser wavelength is 1064nm, the P1 scribing width is 10um, the P1 scribing grooves are required to scribe the ITO film layer until the transparent substrate 101 is exposed, the P1.1 scribing grooves are 10um, and the depth of the P1.1 scribing grooves is half of the total thickness of the ITO film layer.

3) At the position of the P1 scribe line groove, an insulating piece 201 made of an organic insulating gate material is prepared by a screen printing process, the height is 300nm, the width is 10um, and the material is acrylic.

4) At the position of the P1.1 scribing groove, a silver alloy conductive piece 301 with the height of 700nm and the width of 10um is prepared by utilizing a screen printing process, and the conductive piece 301 protrudes out of the light-transmitting electrode layer 102.

5) A first carrier transport layer 401 (in this embodiment, snO ₂ electron transport layer) was prepared on the insulator 201 and the light-transmitting electrode layer 102 by ALD process, and the SnO ₂ film layer thickness was 20nm.

6) A perovskite layer 403 (PVK) was prepared on the first carrier transport layer 401 using a slot coating process with perovskite material FAPbIxCl (1-x) as a mixed system of PbI/CsI/RbCl/PbBr/MAI FAI/MACl materials.

7) A second carrier transport layer 405, in this embodiment a hole transport layer, is prepared on the perovskite layer 403 using a slot coating process.

8) And an oxygen Plasma etching method is adopted to etch PVK and Spiro-OMeTAD materials above the position of the conductive piece 301, and a metal mask plate is used in the process to protect the film layers of other areas.

9) And preparing a conductive electrode layer 601 on the conductive piece 301 and the second carrier transmission layer 405 by utilizing a magnetron sputtering process, wherein the conductive electrode layer 601 is an ITO and Ag composite electrode layer, and the lower layer of the conductive electrode layer is overlapped with the conductive piece 301, wherein the ITO is sputtered by adopting a DC power supply, and the Ag is sputtered by adopting the DC power supply.

10 After the conductive electrode layer 601 is sputtered, a P3 laser process is performed, and the first carrier transmission layer 401 of the combined layer 40 is etched from the conductive electrode layer 601 until the transparent electrode layers 102 are exposed, so that a P3 scribing groove 501 is formed on each transparent electrode layer 102, the perovskite solar cell module is divided into a plurality of sub-cell structures connected in series, and picosecond green light is used as laser with the wavelength of 355nm.

11 Finally, P4 laser technology is carried out, the film layer at the edge of the perovskite component is removed, and the laser is selected as green light with the wavelength of 1064nm and picoseconds.

Example 3

The present embodiment provides another method for preparing a perovskite battery assembly as shown in fig. 2, which specifically includes:

1) The wet etching process shown in fig. 5 is adopted to form a P1 etching groove and a P1.1 etching groove:

(1) Depositing a transparent electrode layer 102 on a transparent substrate 101 to obtain a TCO conductive glass 10, depositing the transparent electrode layer 102 (specifically, an ITO conductive layer in the embodiment) on a substrate of the transparent substrate 101 by PVD method to obtain the TCO conductive glass 10, which is used as a bottom electrode.

Coating photoresist on the TCO conductive glass 10, namely preparing a photoresist film layer on the ITO conductive layer by using a slit coating method.

(3) And performing exposure and development on the photoresist film layer to form patterns corresponding to the P1 scribing grooves and the P1.1 scribing grooves, wherein the P1 and P1.1 exposure processes are realized by selecting half-etching masks (masks).

(4) And performing first-step wet etching on the transparent electrode layer 102 to form a P1 scribing groove, namely performing first-step wet etching on the ITO conductive layer, and forming the P1 scribing groove at the position of the pattern corresponding to the P1 scribing groove.

(5) And (3) cleaning and removing the photoresist on the pattern corresponding to the P1.1 groove, namely removing the photoresist of P1.1 through a cleaning process.

(6) And performing second-step wet etching on the transparent electrode layer 102 to form a P1.1 scribing groove, namely forming the P1.1 scribing groove at the position of the pattern corresponding to the P1.1 scribing groove through second-step wet etching.

(7) And (3) cleaning all the photoresist, and finally, completely removing the photoresist through a cleaning process. Wherein the width of the P1 scribing groove and the width of the P1.1 scribing groove are 10um, and the depth of the P1.1 scribing groove is half of the depth of the P1 scribing groove.

2) At the P1 scribe line, an SiO2 insulated gate is deposited using a CVD process, and a metal mask is used during the process to achieve the desired prepared insulated gate pattern.

3) At the position of the P1.1 scribing groove, a magnetron sputtering process is utilized to prepare a silver alloy conductive piece 301, a metal mask plate is used to realize a conductive grid pattern required to be prepared in the process, and the conductive piece 301 protrudes out of the light-transmitting electrode layer 102.

4) A first carrier transport layer 401, specifically a NiOx hole transport layer in this embodiment, is fabricated on the insulating member 201 and the transparent electrode layer 102 using a PVD magnetron sputtering process, and RF 1000W is used to achieve the desired fabrication of the conductive gate pattern using a metal mask during the process.

5) A lower passivation layer 402, specifically a coated SAM layer, is prepared on the first carrier transport layer 401 using an inkjet printing process, the SAM material being selected to be Me-4PACz.

6) Perovskite layer 403 (PVK) was prepared on lower passivation layer 402 using an inkjet printing process with perovskite material FAPbIxCl (1-x) as a mixed system of PbI/CsI/RbCl/PbBr/MAI FAI/MACl materials.

7) On PVK, a second carrier transport layer 405 is prepared, specifically, a vacuum evaporation process and an ALD process are used to deposit a C60 and SnO2 Electron Transport Layer (ETL), respectively, and a metal mask is used to realize a conductive gate pattern to be prepared during the process, wherein the thickness of the C60 film is 10nm, the thickness of the SnO2 film is 20nm, and the upper surface of the ETL layer is preferably controlled to be flush with the upper surface of the conductive member 301.

8) On the second carrier transport layer 405 and the conductive member 301, an electrically conductive electrode layer 601 (specifically, an ITO and Ag composite electrode layer) is prepared by using a PVD magnetron sputtering process, and the lower layer thereof is overlapped with the conductive member 301, wherein the ITO is sputtered by using a DC power supply, and the Ag is sputtered by using a DC power supply.

9) After the conductive electrode layer 601 is sputtered, a P3 laser process is performed, and the first carrier transmission layer 401 of the combined layer 40 is etched from the conductive electrode layer 601 until the transparent electrode layers 102 are exposed, so that a P3 scribing groove 501 is formed on each transparent electrode layer 102, the perovskite solar cell module is divided into a plurality of sub-cell structures connected in series, and picosecond green light is used as laser with the wavelength of 355nm.

10 Finally, a P4 laser process is carried out to remove the film layer at the edge of the perovskite battery component, and the laser is selected as green light with the wavelength of 1064nm in picoseconds.

The invention provides a P1 laser optimization process, which strengthens P1 insulation performance, increases P1.1 etching process, improves film forming quality of an upper film layer, improves PVK stability of a P1 scribing groove position, refers to design of an electrode of a conductive piece 301, reduces contact resistance, enlarges contact area of an upper electrode and a lower electrode, improves stability of a serial device, designs of an upper insulating piece 201 of the P1 scribing groove and the conductive piece 301 of the P1.1 scribing groove, realizes close adjacent of the electrode of the conductive piece 301 and the P1 scribing groove, does not need to set a safe distance of laser scribing, reduces dead area, improves conversion efficiency of a perovskite component, adopts the process to save a P2 laser scribing process, replaces the electrode of the conductive piece 301, and has lower serial resistance and better stability.

Claims

1. A perovskite battery assembly, characterized in that it comprises a light-transmitting substrate, a plurality of insulating members, and a plurality of sub-batteries connected in series, each of the sub-batteries comprising a light-transmitting electrode layer, a first carrier transport layer, a perovskite layer, a second carrier transport layer, and a conductive electrode layer stacked in sequence, wherein the polarities of the carriers transported by the first carrier transport layer and the second carrier transport layer are opposite; wherein:

The light-transmitting substrate is provided with the light-transmitting electrode layer of each sub-cell, and an insulating member is provided between the light-transmitting electrode layers of two adjacent sub-cells, and the insulating member is used to insulate the light-transmitting electrode layers of the two adjacent sub-cells.

2. The perovskite battery assembly according to claim 1, characterized in that a P3 groove is provided between two adjacent sub-batteries, the P3 groove is carved from the conductive electrode layer to the first carrier transport layer, and the bottom of the P3 groove exposes the light-transmitting electrode layer;

The perovskite battery assembly further includes a plurality of conductive members, each of which is provided between two adjacent sub-batteries, and the conductive member is located between the P3 groove and the insulating member;

In any two adjacent sub-cells, the first end of the conductive member contacts the conductive electrode layer of the first sub-cell, and the second end of the conductive member contacts the light-transmitting electrode layer of the second sub-cell.

3. The perovskite battery assembly according to claim 2, characterized in that the conductive member is in contact with the insulating member, and the height of the light-transmitting electrode layer is the same as the height of the insulating member.

4. The perovskite battery assembly according to claim 3, characterized in that the height of the contact portion between the conductive member and the insulating member is defined as H2, the height of the light-transmitting electrode layer is defined as H1, and H2 is 40% to 60% of H1.

5 . The perovskite battery assembly according to claim 4 , wherein the height H2 is 50% of the height H1 .

6. The perovskite battery assembly according to claim 2, characterized in that the material of the light-transmitting electrode layer is a fluorine-doped tin dioxide film material or an indium tin oxide film material; the maximum height of the light-transmitting electrode layer is 300 to 700 nm;

And/or, the material of the conductive part includes one or more of aluminum alloy, silver alloy, copper alloy, magnesium alloy, gold metal, nickel metal, and titanium metal; the height of the conductive part is 500-800nm; the width of the conductive part is 5-10um; the material of the conductive electrode layer is Cu or Ag or ITO/Ag or IZO/Ag.

7. The perovskite battery assembly according to claim 1, characterized in that the material of the insulating member is an inorganic insulating gate material or an organic insulating gate material; the inorganic insulating gate material is SiOx, SiNx, SiC, _Al2O3 or _ZnO ; the organic insulating gate material is acrylic, polyimide, epoxy resin or polyester; the height of the insulating member is 200 to 600 nm; the width of the insulating member is 5 to 10 um;

And/or, the material of the perovskite layer is FAPbI _x Cl _(1-x) .

8. The perovskite battery assembly according to claim 1, characterized in that a lower passivation layer is provided between the first carrier transport layer and the perovskite layer, and an upper passivation layer is provided between the second carrier transport layer and the perovskite layer;

When the perovskite battery component is a trans-p-i-n device, the first carrier transport layer is a hole transport layer; the material of the lower passivation layer includes one or more of KCl, NaCl, and ZnO; and the second carrier transport layer is an electron transport layer;

When the perovskite battery component is a formal n-i-p device, the first carrier transport layer is an electron transport layer; the lower passivation layer is a self-assembled molecular layer; the material of the upper passivation layer is iodinated phenylethylamine; and the second carrier transport layer is a hole transport layer.

9. A method for preparing a perovskite battery assembly, wherein the perovskite battery assembly is a formal n-i-p device, characterized in that the method comprises the following steps:

(1) Selecting TCO conductive glass as a substrate, the substrate includes a light-transmitting base and a TCO conductive film from bottom to top;

(2) using a wet etching process or a laser etching process on the TCO conductive glass to form a plurality of stepped light-transmitting electrode layers having P1.1 grooves, wherein the plurality of light-transmitting electrode layers have P1 grooves between them;

When the laser etching process is adopted, P1 laser scribing and P1.1 laser scribing are performed on the TCO conductive glass separately or simultaneously, and the P1.1 laser etched area is adjacent to the P1 laser etched area; wherein the P1 laser etches the TCO conductive film until the transparent substrate is exposed; the P1.1 laser etches 40-60% of the total thickness of the TCO conductive film to form a P1.1 scribing groove adjacent to the P1 scribing groove;

When the wet etching process is adopted, P1 wet etching and P1.1 wet etching are performed on the TCO conductive glass separately or simultaneously, and the P1.1 laser etching area is adjacent to the P1 laser etching area; wherein the P1 wet etching TCO conductive film is performed until the transparent substrate is exposed; the P1.1 wet etching TCO conductive film is performed by 40-60% of the total thickness, forming a P1.1 groove adjacent to the P1 groove;

(3) Fill the P1 groove with insulating material to form an insulating member, so that the maximum height of the insulating member is the same as that of the light-transmitting electrode layer;

(5) Fill the P1.1 groove with conductive material to form a conductive member protruding from the light-transmitting electrode layer;

(6) preparing a composite layer on the light-transmitting electrode layer and the insulating member, including sequentially preparing a first carrier transport layer, a lower passivation layer, a perovskite layer, an upper passivation layer, and a second carrier transport layer; preferably, controlling the upper surface of the second carrier transport layer to be flush with the upper surface of the conductive member;

(8) P3 laser scribing is then performed from the conductive electrode layer to the first carrier transport layer of the combined layer until the transparent electrode layer is exposed, so that a P3 scribing groove is formed on each transparent electrode layer, thereby obtaining a solar perovskite cell module.

10. A method for preparing a perovskite battery assembly, wherein the perovskite battery assembly is a trans-type p-i-n device, characterized in that the method comprises the following steps:

(2) performing P1 laser scribing and P1.1 laser scribing on the TCO conductive glass separately or simultaneously, and the P1.1 laser etched area is adjacent to the P1 laser etched area, forming a plurality of step-shaped light-transmitting electrode layers with P1.1 scribing grooves, and the plurality of light-transmitting electrode layers have P1 scribing grooves between them; wherein the P1 laser etches the TCO conductive film until the light-transmitting substrate is exposed; and the P1.1 laser etches 40% to 60% of the total thickness of the TCO conductive film, forming a P1.1 scribing groove adjacent to the P1 scribing groove;

(6) preparing a composite layer on the light-transmitting electrode layer and the insulating member, including sequentially preparing a first carrier transport layer, a lower passivation layer, a perovskite layer, and a second carrier transport layer, and controlling the upper surface of the second carrier transport layer to be flush with the upper surface of the conductive member;