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CN119923007A - Semiconductor Process Chamber - Google Patents

Semiconductor Process Chamber Download PDF

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Publication number
CN119923007A
CN119923007A CN202311403125.4A CN202311403125A CN119923007A CN 119923007 A CN119923007 A CN 119923007A CN 202311403125 A CN202311403125 A CN 202311403125A CN 119923007 A CN119923007 A CN 119923007A
Authority
CN
China
Prior art keywords
boat
process chamber
semiconductor process
cleaning tool
auxiliary cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202311403125.4A
Other languages
Chinese (zh)
Inventor
蔡毅仁
周振溪
闫志顺
张珊珊
申震
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Naura Microelectronics Equipment Co Ltd
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Priority to CN202311403125.4A priority Critical patent/CN119923007A/en
Priority to PCT/CN2024/123590 priority patent/WO2025087038A1/en
Priority to TW113138481A priority patent/TWI884094B/en
Publication of CN119923007A publication Critical patent/CN119923007A/en
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10P72/00—

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention discloses a semiconductor process chamber which comprises a chamber body, a supporting component, a wafer boat, a first electrode component, a second electrode component and an auxiliary cleaning tool, wherein the supporting component is arranged in the chamber body and is used for supporting the wafer boat, the wafer boat comprises a plurality of boat pages which are sequentially arranged at intervals, the semiconductor process chamber comprises a cleaning mode, the wafer boat is supported on the supporting component under the condition that the semiconductor process chamber is in the cleaning mode, the auxiliary cleaning tool is opposite to the outermost boat page of the wafer boat and is arranged at intervals, the outermost boat page of the wafer boat is electrically connected with the first electrode component, and the auxiliary cleaning tool is electrically connected with the second electrode component. The scheme can solve the problem that the cleaning effect of the semiconductor process chamber in the related technology on the outermost boat page cleaning of the wafer boat is poor.

Description

Semiconductor process chamber
Technical Field
The invention relates to the technical field of semiconductor process equipment, in particular to a semiconductor process chamber.
Background
Solar cell power generation is an important approach to solve energy and environmental problems. Most solar cells are now made of crystalline silicon materials, and plating is an important step in the manufacture of high efficiency silicon cells, and the methods commonly used are tube PECVD (PLASMA ENHANCED CHEMICAL Vapor Deposition) for silicon nitride and Poly silicon.
The plasma enhanced chemical vapor deposition uses low-temperature plasma as an energy source, and a wafer boat is required to be used for loading a silicon wafer into a chamber for coating. In the process of coating the silicon wafer, the film layer can be deposited on the surface of the wafer boat, the film layer on the surface of the wafer boat is thicker along with the increase of the process times, and the conversion efficiency and the yield of the silicon wafer can be affected by the overlarge film layer on the surface of the wafer boat, so that the wafer boat needs to be cleaned regularly.
In the related art, wet cleaning and plasma cleaning are mainly used for cleaning the wafer boat. However, when wet cleaning is adopted, not only damage to the boat is easily caused, but also cleaning time is long. When the plasma cleaning is adopted, cleaning gas is introduced into the chamber body, and the wafer boat is started to ionize the cleaning gas into plasma, so that the wafer boat is cleaned. The plasma cleaning can be used for cleaning the boat pages on the inner side of the wafer boat well, and the problem of poor cleaning effect on the boat pages on the outermost side of the wafer boat still exists.
Disclosure of Invention
The invention discloses a semiconductor process chamber, which aims to solve the problem that the cleaning effect of the semiconductor process chamber in the related art on the cleaning of the outermost boat page of a wafer boat is poor.
In order to solve the technical problems, the invention is realized as follows:
in a first aspect, the application discloses a semiconductor process chamber, comprising a chamber body, a support assembly, a wafer boat, a first electrode assembly, a second electrode assembly and an auxiliary cleaning tool, wherein,
The supporting component is arranged in the chamber body and is used for supporting the wafer boat, the wafer boat comprises a plurality of boat pages which are sequentially arranged at intervals, and the semiconductor process chamber comprises a cleaning mode;
Under the condition that the semiconductor process chamber is in the cleaning mode, the wafer boat is supported by the supporting component, the auxiliary cleaning tool is opposite to the outermost boat page of the wafer boat and is arranged at intervals, the outermost boat page of the wafer boat is electrically connected with the first electrode component, and the auxiliary cleaning tool is electrically connected with the second electrode component.
The technical scheme adopted by the invention can achieve the following technical effects:
The auxiliary cleaning tool is arranged in the semiconductor process chamber disclosed by the embodiment of the application, so that the auxiliary cleaning tool can be arranged at a position opposite to the outermost boat page of the wafer boat when the wafer boat is cleaned, is arranged at intervals with the outermost boat page of the wafer boat, and is electrically connected with the first electrode assembly, and the second electrode assembly is electrically connected with the auxiliary cleaning tool, so that the radio frequency power supply energy is fed into the outermost boat page of the wafer boat and the auxiliary cleaning tool through the first electrode assembly and the second electrode assembly, so that cleaning gas between the outermost boat page of the wafer boat and the auxiliary cleaning tool is ionized to form plasma, and a film layer on the outermost boat page of the wafer boat reacts with the plasma to generate a gas-phase reactant to be discharged, thereby better realizing the cleaning of the film layer on the outermost boat page of the wafer boat.
Drawings
FIG. 1 is a schematic diagram of a semiconductor process chamber according to an embodiment of the present invention;
FIG. 2 is a simplified schematic diagram of a semiconductor processing chamber according to an embodiment of the present invention;
FIG. 3 is a schematic view of a semiconductor processing chamber according to an embodiment of the present invention at a first viewing angle;
FIG. 4 is a schematic view of a semiconductor processing chamber according to an embodiment of the present invention at a second view angle;
FIG. 5 is a schematic diagram of a semiconductor process chamber according to an embodiment of the present invention;
FIG. 6 is an enlarged view of a portion at A in FIG. 5;
FIG. 7 is a schematic view of a wafer boat according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram of an auxiliary cleaning tool disclosed in an embodiment of the present invention;
FIG. 9 is a schematic diagram of a process boat disassembly assisted cleaning tool according to an embodiment of the present invention;
fig. 10 is an assembly schematic diagram of a wafer boat and an auxiliary cleaning tool according to an embodiment of the present invention.
Reference numerals illustrate:
100-chamber body,
200-Supporting component, 210-first supporting rod, 220-second supporting rod, 230-first flange, 231-electrode feeding structure, 240-second flange,
300-Wafer boat, 310-boat page, 320-electrode hole, 330-mounting rod, 340-nut, 350-gasket,
400-First electrode assembly,
500-Second electrode assembly, 510-first RF electrode, 520-second RF electrode,
600-Auxiliary cleaning tool, 610-anchor ear,
700-Radio frequency power supply,
800-Single pole double throw switch.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to specific embodiments of the present invention and corresponding drawings. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The technical scheme disclosed by each embodiment of the invention is described in detail below with reference to the accompanying drawings.
Referring to fig. 1 to 10, an embodiment of the present invention discloses a semiconductor process chamber, which includes a chamber body 100, a support assembly 200, a wafer boat 300, a first electrode assembly 400, a second electrode assembly 500, and an auxiliary cleaning tool 600.
The chamber body 100 may be a quartz tube, and of course, the chamber body 100 may have other structures, and the embodiment of the present application is not limited to the specific structure of the chamber body 100.
The support assembly 200 is disposed in the chamber body 100 for supporting the wafer boat 300.
The wafer boat 300 may be made of graphite, however, the wafer boat 300 may be made of other materials, and the material of the wafer boat 300 is not particularly limited in the present application. The wafer boat 300 includes a plurality of boat pages 310 arranged at intervals in sequence. The rf power supply 700 may be electrically connected to the wafer boat 300 to provide the energy required for ionization of the process gases so that the wafers carried on the wafer boat 300 may be subjected to a coating process. When the film plating process is performed on the silicon wafer, the chamber body 100 is in a heated state, and the chamber body 100 is in a vacuum state.
The semiconductor process chamber includes a cleaning mode. In the process of coating the silicon wafer, the surface of the wafer boat 300 will also deposit a film layer, and as the process times of the wafer boat 300 increase, the film layer on the surface of the wafer boat 300 will be thicker, and the cleaning mode in the embodiment of the application refers to a mode of cleaning the film layer deposited on the wafer boat 300.
In the case that the semiconductor process chamber is in the cleaning mode, the wafer boat 300 is supported on the support assembly 200, and the auxiliary cleaning tool 600 is disposed opposite to and spaced apart from the outermost boat page 310 of the wafer boat 300. The outermost boat page 310 of the wafer boat 300 is electrically connected to the first electrode assembly 400, and the auxiliary cleaning tool 600 is electrically connected to the second electrode assembly 500.
In particular, when the wafer boat 300 is cleaned, a cleaning gas needs to be introduced into the chamber body 100. The cleaning gas may be one or any combination of NF3 (nitrogen trifluoride), SF6 (sulfur hexafluoride), CF4 (carbon tetrafluoride), F2 (fluorine gas), fluorine-containing gas, and one or more of Ar (argon), O2 (oxygen). After the cleaning gas is introduced, the rf power is fed to the outermost boat sheet 310 of the wafer boat 300 and the auxiliary cleaning tool 600 through the first electrode assembly 400 and the second electrode assembly 500, so that the cleaning gas is ignited between the outermost boat sheet 310 of the wafer boat 300 and the auxiliary cleaning tool 600 to ionize to form plasma (e.g., fluorine radicals), so that the film on the outermost boat sheet 310 of the wafer boat 300 reacts with the plasma to generate a gas-phase reactant, and the gas-phase reactant is discharged, thereby realizing the cleaning of the film on the outermost boat sheet 310 of the wafer boat 300.
One of the first electrode assembly 400 and the second electrode assembly 500 is a cathode electrode, and the other is an anode electrode.
The semiconductor process chamber disclosed in the embodiment of the application is provided with the auxiliary cleaning tool 600, so that when the wafer boat 300 is cleaned, the auxiliary cleaning tool 600 can be arranged at a position opposite to the outermost boat page 310 of the wafer boat 300 and is arranged at intervals with the outermost boat page 310 of the wafer boat 300, the first electrode assembly 400 is electrically connected with the outermost boat page 310 of the wafer boat 300, and the second electrode assembly 500 is electrically connected with the auxiliary cleaning tool 600, thereby feeding radio frequency power energy into the outermost boat page 310 of the wafer boat 300 and the auxiliary cleaning tool 600 through the first electrode assembly 400 and the second electrode assembly 500, so that cleaning gas between the outermost boat page 310 of the wafer boat 300 and the auxiliary cleaning tool 600 is ionized to form plasma, and a film layer on the outermost boat page 310 of the wafer boat 300 is reacted with the plasma to generate a gas-phase reactant to be discharged, thereby better realizing cleaning of the film layer on the outermost boat 310 of the wafer boat 300.
In an alternative embodiment, the plurality of boat sheets 310 may be divided into a first boat sheet group and a second boat sheet group, and the first boat sheet group may include the outermost boat sheet 310 of the boat 300. The first boat set may be electrically connected to the first electrode assembly 400 and the second boat set may be electrically connected to the second electrode assembly 500 while the semiconductor process chamber is in a cleaning mode.
It should be noted that, the first boat page group and the second boat page group may include a plurality of boat pages 310, and the boat pages 310 of the first boat page group and the boat pages 310 of the second boat page group may be sequentially spaced and arranged in a crossing manner. The first electrode assembly 400 may feed rf power to the boat pages 310 of the first boat page set and the second electrode assembly 500 may feed rf power to the boat pages 310 of the second boat page set, so that the cleaning gas between the boat pages 310 of the first boat page set and the boat pages 310 of the second boat page set may be ionized to form plasma, so that the plasma may clean the film on the inner boat pages 310 of the wafer boat 300.
In the case of the semiconductor process chamber disclosed in the embodiment of the present application in the cleaning mode, the first boat blade group is electrically connected to the first electrode assembly 400, and the second boat blade group is electrically connected to the second electrode assembly 500, so that the film layer on the boat blade 310 on the inner side of the wafer boat 300 can be cleaned.
In a specific implementation, when the semiconductor process chamber is in the cleaning mode, the first boat assembly 400 is electrically connected to the first electrode assembly 400, and the second boat assembly and the auxiliary cleaning tool 600 may be simultaneously electrically connected to the second electrode assembly 500, so that the outermost boat 310 and the inner boat 310 of the wafer boat 300 may be simultaneously cleaned. However, in some cases, the thicknesses of the film layers on the outermost boat page 310 and the inner boat page 310 of the boat 300 are different, and if the outermost boat page 310 and the inner boat page 310 of the boat 300 are cleaned at the same time, the thinner film layer deposited boat page 310 is cleaned first, and if the cleaning is continued, etching will be caused to the boat 300.
In order to avoid etching the wafer boat 300, the second boat assembly is optionally insulated from the second electrode assembly 500 in the case where the auxiliary cleaning tool 600 is electrically connected to the second electrode assembly 500. In the case where the second boat sheet group is electrically connected to the second electrode assembly 500, the auxiliary cleaning tool 600 is insulated from the second electrode assembly 500, so that the outermost boat sheet 310 and the inner boat sheet 310 of the wafer boat 300 are cleaned individually, and thus, etching of the wafer boat 300 can be prevented.
In order to fully utilize the semiconductor process chamber, the semiconductor process chamber optionally further comprises a process mode. The process mode refers to a mode in which a coating process is performed on the silicon wafers carried on the wafer boat 300. In the case that the semiconductor process chamber is in the process mode, the first boat set is electrically connected with the first electrode assembly 400, the second boat set is electrically connected with the second electrode assembly 500, and the auxiliary cleaning tool 600 is insulated from the second electrode assembly 500.
It should be noted that, in the case that the semiconductor process chamber is in the process mode, the process gas may be introduced into the chamber body 100, and the first electrode assembly 400 and the second electrode assembly 500 may feed power rf energy into the boat pages 310 of the first boat page group and the boat pages 310 of the second boat page group, so as to provide energy required for ionizing the process gas, so that the process gas is ionized to form plasma, thereby performing a film coating process on the silicon wafers carried on the wafer boat 300. The first electrode assembly 400 and the second electrode assembly 500 may be electrically connected to the boat deck 310 of the first boat deck and the boat deck 310 of the second boat deck, respectively, through electrode holes 320 on the wafer boat 300.
The semiconductor process chamber disclosed by the embodiment of the application not only can be used for cleaning the wafer boat 300, but also can be used for carrying out a film coating process on the silicon wafers carried on the wafer boat 300, so that the semiconductor process chamber is fully utilized.
In order to clean the wafer boat 300 better, optionally, in the case that the semiconductor process chamber is in the cleaning mode, the auxiliary cleaning tools 600 may be disposed on two opposite sides of the wafer boat 300.
In the semiconductor process chamber disclosed in the embodiment of the application, the auxiliary cleaning tools 600 are arranged on the two opposite sides of the wafer boat 300, so that the two boat pages 310 on the outermost side of the wafer boat 300 can be cleaned well, and the cleaning capability of the wafer boat 300 can be improved.
In an alternative embodiment, the support assembly 200 may include a first support bar 210 and a second support bar 220 disposed at intervals. Both the first support bar 210 and the second support bar 220 may be provided with an auxiliary cleaning tool 600. In the case where the first support bar 210 and the second support bar 220 support the wafer boat 300, the wafer boat 300 is located between the auxiliary cleaning tool 600 on the first support bar 210 and the auxiliary cleaning tool 600 on the second support bar 220.
The semiconductor process chamber disclosed in the embodiment of the application makes the structure of the support assembly 200 relatively simple by arranging the support assembly 200 into the first support rod 210 and the second support rod 220 which are arranged at intervals, and is beneficial to the arrangement of the wafer boat 300 and the auxiliary cleaning tool 600.
To facilitate the installation of the auxiliary cleaning tool 600, the auxiliary cleaning tool 600 may optionally include a fixing hoop 610, and the auxiliary cleaning tool 600 may be fixed to the first support bar 210 or the second support bar 220 by the fixing hoop 610. Of course, the auxiliary cleaning tool 600 may be mounted to the first support rod 210 and the second support rod 220 in other manners, and the embodiment of the application is not limited to the specific mounting manner of the auxiliary cleaning tool 600.
The semiconductor process chamber disclosed in the embodiment of the application installs the auxiliary cleaning tool 600 on the first support rod 210 or the second support rod 220 through the anchor ear 610, so that not only is the installation of the auxiliary cleaning tool 600 more stable, but also the auxiliary cleaning tool 600 is also convenient to detach from the installation.
Alternatively, the second electrode assembly 500 may include a first rf electrode 510, each of the first support bar 210 and the second support bar 220 may be provided with the first rf electrode 510, and the first rf electrode 510 may extend along an extension direction of the first support bar 210 or the second support bar 220. The auxiliary cleaning tool 600 on the first support bar 210 and the auxiliary cleaning tool 600 on the second support bar 220 may be electrically connected to the corresponding first rf electrode 510, respectively.
In the semiconductor process chamber disclosed in the embodiment of the application, the first rf electrode 510 is disposed on the first support rod 210 or the second support rod 220 and extends along the extending direction of the first support rod 210 or the second support rod 220, so that the compactness of component arrangement is facilitated.
The second electrode assembly 500 may further include a second rf electrode 520, and the second rf electrode 520 may be electrically connected to the second boat set in order to separately feed rf power to the second boat set and the auxiliary cleaning tool 600.
When the outermost boat page 310 and the inner boat page 310 of the wafer boat 300 need to be cleaned independently, the rf power supply 700 of the semiconductor process chamber may be electrically connected to the first rf electrode 510 and the second rf electrode 520 through the single-pole double-throw switch 800, so that the connection between the rf power supply 700 and the first rf electrode 510 or the second rf electrode 520 may be realized by controlling the single-pole double-throw switch 800, and further, the outermost boat page 310 and the inner boat page 310 of the wafer boat 300 may be cleaned independently.
In an alternative embodiment, the support assembly 200 may further include a first flange 230 and a second flange 240, the first end of the first support bar 210 and the first end of the second support bar 220 may each be connected to the first flange 230, and the second end of the first support bar 210 and the second end of the second support bar 220 may each be connected to the second flange 240. The first flange 230 includes an electrode feeding structure 231, a first end of the first rf electrode 510 is connected to the electrode feeding structure 231, and a second end of the first rf electrode 510 is connected to the auxiliary cleaning tool 600.
The semiconductor process chamber disclosed in the embodiment of the application makes the structure of the support assembly 200 more stable by arranging the support assembly 200 to have a structure including the first flange 230 and the second flange 240, and makes the first end of the first rf electrode 510 connected with the electrode feed-in structure 231 by arranging the electrode feed-in structure 231 on the first flange 230, so that the rf energy of the rf power supply 700 is advantageously fed into the auxiliary cleaning tool 600 through the electrode feed-in structure 231 and the first rf electrode 510, and the electrode feed-in structure 231 can also fix the first rf electrode 510.
In another embodiment, the auxiliary cleaning tool 600 is detachably connected to the outermost boat page 310 of the wafer boat 300 in the case that the semiconductor process chamber is in the cleaning mode, thereby facilitating maintenance, overhaul, replacement, etc. of the auxiliary cleaning tool 600.
Specifically, the wafer boat 300 may include a mounting rod 330 extending to the outermost boat page 310, the auxiliary cleaning tool 600 may be provided with a mounting through hole, the auxiliary cleaning tool 600 is sleeved on the mounting rod 330 through the mounting through hole, and may be screw-engaged with the mounting rod 330 through a nut 340 to mount the auxiliary cleaning tool 600 to the wafer boat 300. A spacer 350 may be further disposed between the nut 340 and the auxiliary cleaning tool 600, so that the nut 340 can be stably installed on the auxiliary cleaning tool 600.
Alternatively, the plurality of boat sheets 310 may be divided into a first boat sheet group and a second boat sheet group, and the first boat sheet group may include the outermost boat sheet 310 of the wafer boat 300, and the semiconductor process chamber may further include a process mode. In the case that the semiconductor process chamber is in the cleaning mode, the first boat set is electrically connected with the first electrode assembly 400, the second boat set is electrically connected with the second electrode assembly 500, and/or the auxiliary cleaning tool 600 is electrically connected with the second electrode assembly 500. In the case that the semiconductor process chamber is in the process mode, the auxiliary cleaning tool 600 is separated from the wafer boat 300.
In the case of the semiconductor process chamber disclosed in the embodiment of the present application in the cleaning mode, the first boat blade group is electrically connected to the first electrode assembly 400, and the second boat blade group is electrically connected to the second electrode assembly 500, so that the film layer on the boat blade 310 on the inner side of the wafer boat 300 can be cleaned. The auxiliary cleaning tool 600 may be separated from the wafer boat 300 in the case where the semiconductor process chamber is in a process mode or other non-cleaning mode, so that formation of a film layer on the auxiliary cleaning tool 600 may be avoided when a film coating process is performed on a silicon wafer.
In order to improve the cleaning effect on the outermost boat page 310 of the wafer boat 300, optionally, the auxiliary cleaning tool 600 may be a non-hollowed-out plate-shaped structure, and in a direction perpendicular to the surface of the non-hollowed-out plate-shaped structure, the projection of the outer edge profile of the auxiliary cleaning tool 600 may be located outside the projection of the outermost boat page 310 of the wafer boat 300.
According to the semiconductor process chamber disclosed by the embodiment of the application, the auxiliary cleaning tool 600 is arranged to be a non-hollowed-out plate-shaped structural member, and in the direction perpendicular to the surface of the non-hollowed-out plate-shaped structural member, the projection of the outermost boat page 310 of the wafer boat 300, which is positioned on the outer edge contour of the projection of the auxiliary cleaning tool 600, is performed, so that in the ionization process, plasma can well cover the outermost boat page 310 of the wafer boat 300, and the cleaning effect on the outermost boat page 310 of the wafer boat 300 can be improved.
Of course, the auxiliary cleaning tool 600 may also be a hollow plate-shaped structural member, so that the weight of the auxiliary cleaning tool 600 is reduced, and the embodiment of the application does not limit the specific structure of the auxiliary cleaning tool 600.
The distance between the auxiliary cleaning tool 600 and the outermost boat page 310 of the boat 300 may be between 12mm and 30mm, thereby facilitating the stability of the ignition between the auxiliary cleaning tool 600 and the outermost boat page 310 of the boat 300. Of course, other distances between the auxiliary cleaning tool 600 and the outermost boat page 310 of the wafer boat 300 are also possible, and the distance between the auxiliary cleaning tool 600 and the outermost boat page 310 of the wafer boat 300 is not particularly limited in the embodiment of the present application.
Specifically, the auxiliary cleaning tool 600 may be made of metal or graphite, so that the auxiliary cleaning tool 600 may have better strength and better conductivity.
Optionally, the semiconductor process chamber may further include a radio frequency power supply 700, each of the first electrode assembly 400 and the second electrode assembly 500 may be connected to the radio frequency power supply 700, a power frequency output by the radio frequency power supply 700 may be between 20KHz and 400KHz, and a power output by the radio frequency power supply 700 may be between 10KW and 30 KW.
According to the semiconductor process chamber disclosed by the embodiment of the application, the power frequency output by the radio frequency power supply 700 is set between 20KHz and 400KHz, and the power output by the radio frequency power supply 700 is set between 10KW and 30KW, so that the film plating process of the silicon wafer by the semiconductor process chamber and the cleaning process of the wafer boat 300 by the semiconductor process chamber can be considered, the film plating process and the cleaning process of the semiconductor process chamber are combined together, and the simplification of the semiconductor process chamber is facilitated.
A method for cleaning a wafer boat 300 in a particular semiconductor process chamber. Step one, after the wafer boat 300 carries silicon wafers and a coating process is performed for the number of times of use, the wafer boat 300 is unloaded and then transferred into the chamber body 100, the wafer boat 300 is supported on the support assembly 200, the first boat page group of the wafer boat 300 is electrically connected with the first electrode assembly 400, the auxiliary cleaning tool 600 is electrically connected with the second electrode assembly 500, and the transfer of the chamber body 100 is closed. Wherein the first boat deck group includes the outermost boat deck 310 of the boat 300.
Step two, the wafer boat 300 is heated, the chamber body 100 is vacuumized, and whether the chamber body 100 has leakage or not is detected.
And thirdly, under the condition that the chamber body 100 is detected to be not leaked, introducing cleaning gas into the chamber body 100, and adjusting the pressure in the chamber body 100 to be 20 pa-600 pa.
Step four, the rf power supply 700 is controlled to feed rf energy to the outermost boat page 310 of the wafer boat 300 and the auxiliary cleaning tool 600 through the first electrode assembly 400 and the second electrode assembly 500, respectively, so as to ionize the cleaning gas located between the outermost boat page 310 of the wafer boat 300 and the auxiliary cleaning tool 600 to form plasma, and the plasma reacts with the film layer on the outermost boat page 310 of the wafer boat 300 to generate a gas-phase reactant, which is discharged out of the chamber body 100. The power frequency output by the radio frequency power supply 700 is between 20KHz and 400KHz, and the power output by the radio frequency power supply 700 is between 10KW and 30 KW.
And fifthly, electrically connecting the second boat blade set of the wafer boat 300 with the second electrode assembly 500 to clean the boat blade 310 inside the wafer boat 300.
During the process of cleaning the wafer boat 300 in the semiconductor process chamber, the chamber body 100 is kept in a vacuum and constant pressure state, and the vacuum pump continuously vacuums the chamber body 100 to discharge the reacted gas phase compound and the excessive cleaning gas out of the chamber body 100.
Step six, after the wafer boat 300 is cleaned, inert gas (such as nitrogen, argon, etc.) is introduced into the chamber body 100 to purge the chamber body 100.
Step seven, after the chamber body 100 is cleaned, the inert gas is filled back into the chamber body 100.
And step eight, carrying out a wafer boat saturation process on the wafer boat 300 in the chamber body 100 so as to ensure the uniformity of the wafer boat 300 carrying silicon wafers for coating process.
The application also discloses semiconductor process equipment, which comprises the semiconductor process chamber disclosed in the embodiment.
The semiconductor process equipment disclosed by the embodiment of the application can well clean the film layer on the boat page 310 at the outermost side of the wafer boat 300 by arranging the semiconductor process chamber disclosed by the embodiment.
The foregoing embodiments of the present invention mainly describe differences between the embodiments, and as long as there is no contradiction between different optimization features of the embodiments, the embodiments may be combined to form a better embodiment, and in view of brevity of line text, no further description is provided herein.
The embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present invention and the scope of the claims, which are to be protected by the present invention.

Claims (14)

1. A semiconductor process chamber is characterized by comprising a chamber body (100), a supporting component (200), a wafer boat (300), a first electrode component (400), a second electrode component (500) and an auxiliary cleaning tool (600), wherein,
The supporting component (200) is arranged in the chamber body (100) and is used for supporting the wafer boat (300), the wafer boat (300) comprises a plurality of boat pages (310) which are sequentially arranged at intervals, and the semiconductor process chamber comprises a cleaning mode;
Under the condition that the semiconductor process chamber is in the cleaning mode, the wafer boat (300) is supported by the supporting component (200), the auxiliary cleaning tool (600) is opposite to and arranged at intervals on the outermost boat page (310) of the wafer boat (300), the outermost boat page (310) of the wafer boat (300) is electrically connected with the first electrode component (400), and the auxiliary cleaning tool (600) is electrically connected with the second electrode component (500).
2. The semiconductor process chamber of claim 1, wherein a plurality of the boat pages (310) are divided into a first boat page group and a second boat page group, the first boat page group comprising the outermost boat page (310) of the wafer boat (300);
The first boat set is electrically connected to the first electrode assembly (400) and the second boat set is electrically connected to the second electrode assembly (500) with the semiconductor process chamber in the cleaning mode.
3. A semiconductor process chamber according to claim 2 wherein,
The second boat page group is insulated from the second electrode assembly (500) under the condition that the auxiliary cleaning tool (600) is electrically connected with the second electrode assembly (500);
The auxiliary cleaning tool (600) is insulated from the second electrode assembly (500) under the condition that the second boat page group is electrically connected with the second electrode assembly (500).
4. The semiconductor process chamber of claim 2, wherein the semiconductor process chamber further comprises a process mode;
The first boat set is electrically connected with the first electrode assembly (400), the second boat set is electrically connected with the second electrode assembly (500), and the auxiliary cleaning tool (600) is insulated from the second electrode assembly (500) when the semiconductor process chamber is in the process mode.
5. The semiconductor process chamber according to claim 1, wherein the auxiliary cleaning tool (600) is provided on opposite sides of the wafer boat (300) in the case of the semiconductor process chamber in the cleaning mode.
6. The semiconductor process chamber according to claim 1, wherein the support assembly (200) comprises a first support rod (210) and a second support rod (220) which are arranged at intervals, the first support rod (210) and the second support rod (220) are both provided with the auxiliary cleaning tool (600), and the wafer boat (300) is located between the auxiliary cleaning tool (600) on the first support rod (210) and the auxiliary cleaning tool (600) on the second support rod (220) under the condition that the first support rod (210) and the second support rod (220) support the wafer boat (300).
7. The semiconductor process chamber of claim 6, wherein the auxiliary cleaning tool (600) comprises a fixed hoop (610), the auxiliary cleaning tool (600) being fixed to the first support bar (210) or the second support bar (220) by the fixed hoop (610).
8. The semiconductor process chamber of claim 6, wherein the second electrode assembly (500) comprises a first rf electrode (510), the first support rod (210) and the second support rod (220) are each provided with the first rf electrode (510), and the first rf electrode (510) extends along an extension direction of the first support rod (210) or the second support rod (220), and the auxiliary cleaning tool (600) on the first support rod (210) and the auxiliary cleaning tool (600) on the second support rod (220) are electrically connected to the corresponding first rf electrode (510), respectively.
9. The semiconductor process chamber of claim 8, wherein the support assembly (200) further comprises a first flange (230) and a second flange (240), wherein a first end of the first support rod (210) and a first end of the second support rod (220) are both connected to the first flange (230), wherein a second end of the first support rod (210) and a second end of the second support rod (220) are both connected to the second flange (240), wherein the first flange (230) comprises an electrode feed structure (231), wherein a first end of the first rf electrode (510) is connected to the electrode feed structure (231), and wherein a second end of the first rf electrode (510) is connected to the auxiliary cleaning tool (600).
10. A semiconductor process chamber according to claim 1 wherein,
And under the condition that the semiconductor process chamber is in the cleaning mode, the auxiliary cleaning tool (600) is detachably connected with the outermost boat page (310) of the wafer boat (300).
11. The semiconductor process chamber of claim 10, wherein a plurality of said boat sheets (310) are divided into a first boat sheet group and a second boat sheet group, said first boat sheet group comprising an outermost of said boat sheets (310) of said wafer boat (300), said semiconductor process chamber further comprising a process mode;
The first boat set is electrically connected to the first electrode assembly (400), the second boat set is electrically connected to the second electrode assembly (500), and/or the auxiliary cleaning tool (600) is electrically connected to the second electrode assembly (500) with the semiconductor process chamber in the cleaning mode;
the auxiliary cleaning tool (600) is separated from the wafer boat (300) with the semiconductor process chamber in the process mode.
12. The semiconductor process chamber according to claim 1, wherein the auxiliary cleaning tool (600) is a non-hollowed-out plate-like structure, and a projection of an outer edge profile of the auxiliary cleaning tool (600) is located outside a projection of the boat page (310) at an outermost side of the boat (300) in a direction perpendicular to a surface of the non-hollowed-out plate-like structure.
13. The semiconductor process chamber according to claim 1, wherein the auxiliary cleaning tool (600) is made of metal or graphite.
14. The semiconductor process chamber of claim 1, further comprising a radio frequency power supply (700), wherein the first electrode assembly (400) and the second electrode assembly (500) are each connected to the radio frequency power supply (700), the power frequency output by the radio frequency power supply (700) is between 20KHz and 400KHz, and the power output by the radio frequency power supply (700) is between 10KW and 30 KW.
CN202311403125.4A 2023-10-26 2023-10-26 Semiconductor Process Chamber Pending CN119923007A (en)

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TW113138481A TWI884094B (en) 2023-10-26 2024-10-09 Semiconductor process chamber

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KR20060087050A (en) * 2005-01-28 2006-08-02 삼성전자주식회사 Chamber Cleaning Boat
US20100126531A1 (en) * 2008-11-25 2010-05-27 Taiwan Semiconductor Manufacturing Company Method and apparatus for cleaning semiconductor device fabrication equipment using supercritical fluids
CN110265356B (en) * 2019-06-21 2021-04-06 西安电子科技大学 Graphene-based GaN epitaxial layer lift-off method
CN111235552B (en) * 2020-04-01 2024-11-26 湖南红太阳光电科技有限公司 A preheating type tubular PECVD device and control method thereof
CN215481256U (en) * 2021-04-29 2022-01-11 北京北方华创微电子装备有限公司 Semiconductor processing equipment and process chamber thereof
CN114411122B (en) * 2022-01-20 2023-03-21 北京北方华创微电子装备有限公司 Semiconductor processing equipment and process chamber thereof
CN116765047A (en) * 2023-05-24 2023-09-19 湖南红太阳光电科技有限公司 A kind of graphite boat dry cleaning device

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